Wafer post-processing equipment

Abstract

This utility model belongs to the field of semiconductor technology, specifically relating to a wafer post-processing device. The wafer post-processing device of this utility model includes a drying structure and a defect detection structure. The drying structure includes a housing with a drying chamber and a drying outlet, which are connected. The defect detection structure includes a shell connected to the housing. The shell has a scanning chamber, a wafer inlet, and a wafer outlet. The wafer inlet and wafer outlet are respectively connected to the scanning chamber and the drying outlet. The scanning chamber is equipped with a detection component for detecting wafer defects. The wafer can enter the scanning chamber through the drying outlet and the wafer inlet and exit through the wafer outlet.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor technology, specifically relating to a wafer post-processing device. Background Technology

[0002] A wafer is a silicon chip used to manufacture silicon semiconductor integrated circuits. It is called a wafer because of its circular shape. Various component structures can be processed and fabricated on silicon wafers to become integrated circuit products with specific electrical functions.

[0003] Wafer manufacturing processes are prone to various defects such as breakage, microcracks, and scratches, especially pits, bumps, and microcracks, which are very difficult to detect. High-end chip applications require devices with ultra-smooth, non-destructive, and thinner surface properties. Therefore, with the rapid development of the IC industry, various surface planarization technologies have been developed. Among them, Chemical Mechanical Polishing (CMP), as the only technology capable of providing global planarization, is widely used in semiconductor manufacturing. CMP combines chemical etching and mechanical friction to smooth out protrusions on the wafer surface and process a thin film to a specified thickness. After polishing, effective cleaning is required to remove residual polishing particles and byproducts from the wafer surface. Simultaneously, semiconductor manufacturing requires wafers to be "dry-in, dry-out" in the CMP process module, necessitating a drying process. To confirm whether defects have occurred during the chemical mechanical polishing process, the wafer is inspected after drying. In existing technologies, before the inspection step, the wafer needs to be transferred to the inspection platform and then scanned. This increases the production process, reduces production efficiency, and causes serious economic losses.

[0004] Therefore, there is an urgent need to provide a wafer post-processing device to solve the above problems. Utility Model Content

[0005] The purpose of this invention is to at least solve the problem of the complexity of existing wafer defect detection processes. This purpose is achieved through the following technical solution:

[0006] The first aspect of this utility model provides a wafer post-processing apparatus, comprising:

[0007] A drying structure, the drying structure including a box, the box having a drying chamber and a drying outlet, the drying outlet and the drying chamber being in communication;

[0008] A defect detection structure includes a housing connected to a box. The housing has a scanning cavity, a wafer inlet, and a wafer outlet. The wafer inlet and the wafer outlet are respectively connected to the scanning cavity. The wafer inlet is connected to the drying outlet. The scanning cavity is equipped with a detection component for detecting defects in the wafer. The wafer can enter the scanning cavity through the drying outlet and the wafer inlet, and exit through the wafer outlet.

[0009] By using the wafer post-processing device in this technical solution, after the wafer has completed the drying process, it can be directly moved to the scanning cavity through the drying outlet and wafer inlet for defect detection. After the detection is completed, the wafer can be removed from the wafer outlet. This wafer post-processing device eliminates the need for wafer transfer after drying, simplifying the process flow, effectively improving production efficiency, and increasing economic benefits.

[0010] In addition, the wafer post-processing apparatus of this utility model may also have the following additional technical features:

[0011] In some embodiments of this utility model, the detection component includes a laser emitter and an optical signal collector, wherein the laser emitter is used to emit laser light onto the surface of the wafer, and the optical signal collector is used to collect optical signals.

[0012] In some embodiments of this utility model, multiple laser emitters are provided.

[0013] In some embodiments of this utility model, the optical signal collector includes a reflected light collector and a scattered light collector, wherein the reflected light collector is used to collect reflected light signals and the scattered light collector is used to collect scattered light signals.

[0014] In some embodiments of this utility model, the drying chamber is provided with a propulsion mechanism, and the drying outlet, the wafer inlet and the wafer outlet are arranged along a first direction. The propulsion mechanism can push the wafer to move along the first direction.

[0015] In some embodiments of this utility model, a support structure is provided at the bottom of the drying chamber, and the support structure is used to support the wafer.

[0016] In some embodiments of this utility model, the drying chamber is provided with an air jet pipe, and a plurality of nozzles are provided along the length of the air jet pipe. The nozzles are used to spray drying gas onto the wafer.

[0017] In some embodiments of this invention, the jet pipe includes a first jet pipe and a second jet pipe, with the first jet pipe and the second jet pipe located on opposite sides of the wafer.

[0018] In some embodiments of this invention, the length direction of the jet pipe is perpendicular to the direction of movement of the wafer.

[0019] In some embodiments of this invention, the drying gas is air or nitrogen. Attached Figure Description

[0020] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0021] Figure 1 A schematic diagram of the wafer post-processing apparatus according to an embodiment of the present invention is shown from a certain perspective.

[0022] Figure 2 A schematic diagram of the wafer post-processing apparatus according to an embodiment of the present invention is shown from another perspective.

[0023] The labels in the attached diagram are as follows:

[0024] 10. Wafers;

[0025] 100. Drying structure; 110. Box body; 111. Drying chamber;

[0026] 200. Defect detection structure; 210. Housing; 211. Scanning cavity; 212. Wafer exit; 220. Laser emitter; 230. Optical signal collector. Detailed Implementation

[0027] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0028] It should be understood that the terminology used herein is for the purpose of describing particular exemplary embodiments only and is not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “described” as used herein may also include the plural forms. The terms “comprising,” “including,” “containing,” and “having” are inclusive and therefore indicate the presence of the stated features, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, elements, components, and / or combinations thereof. The method steps, processes, and operations described herein are not construed as requiring them to be performed in a particular order described or illustrated unless the order of performance is explicitly indicated. It should also be understood that additional or alternative steps may be used.

[0029] Although terms such as first, second, third, etc., may be used in this document to describe multiple elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms. These terms may be used only to distinguish one element, component, region, layer, or segment from another. Unless the context clearly indicates otherwise, terms such as "first," "second," and other numerical terms used herein do not imply order or sequence. Therefore, the first element, component, region, layer, or segment discussed below may be referred to as the second element, component, region, layer, or segment without departing from the teachings of the exemplary embodiments.

[0030] For ease of description, spatial relative terms may be used in the text to describe the relationship of one element or feature relative to another element or feature, as shown in the figure. These relative terms include, for example, "inside," "outside," "middle," "outer," "below," "below," "above," "over," etc. Such spatial relative terms are intended to include different orientations of the device in use or operation, other than those depicted in the figure. For example, if the device in the figure is flipped, an element described as "below other elements or features" or "below other elements or features" would subsequently be oriented "above other elements or features" or "above other elements or features." Therefore, the example term "below" can include both upper and lower orientations.

[0031] Figure 1 A schematic diagram of the wafer post-processing apparatus according to an embodiment of the present invention is shown from a certain perspective. Figure 2 A schematic diagram of the wafer post-processing apparatus according to an embodiment of the present invention is shown from another perspective. For example... Figure 1 and Figure 2As shown, this utility model proposes a wafer post-processing device, including a drying structure 100 and a defect detection structure 200. The drying structure 100 includes a housing 110, which has a drying chamber 111 and a drying outlet, and the drying outlet and the drying chamber 111 are connected. The defect detection structure 200 includes a housing 210, which is connected to the housing 110. The housing 210 has a scanning chamber 211, a wafer inlet and a wafer outlet 212, which are respectively connected to the scanning chamber 211. The wafer inlet and the drying outlet are connected. The scanning chamber 211 is provided with a detection component, which is used to detect defects in the wafer 10. The wafer 10 can enter the scanning chamber 211 through the drying outlet and the wafer inlet, and be removed through the wafer outlet 212.

[0032] By using the wafer post-processing device in this technical solution, after the wafer 10 has completed the drying process, it can be directly moved to the scanning cavity 211 through the drying outlet and the wafer inlet. Defect detection is performed in the scanning cavity 211, and after the detection is completed, the wafer 10 can be removed from the wafer outlet 212. With this wafer post-processing device structure, there is no need to transfer the wafer 10 after drying, simplifying the process flow, effectively improving production efficiency, and contributing to increased economic benefits.

[0033] Furthermore, the detection component includes a laser emitter 220 and an optical signal collector 230. The laser emitter 220 is used to emit a laser to the surface of the wafer 10, and the optical signal collector 230 is used to collect optical signals.

[0034] Laser emitter 220 illuminates the surface of wafer 10 with a laser beam. Since no patterns have yet been etched onto wafer 10, this step is primarily used to detect material quality issues during manufacturing, control the thin film deposition and chemical mechanical polishing processes, and assess back-side contamination of wafer 10. When the laser beam illuminates the surface of wafer 10, if defects (such as particles or cracks) are encountered, these defects will scatter some of the laser light, forming scattered light. Simultaneously, some laser light will be reflected by the surface of wafer 10, forming reflected light. Optical signal acquisition unit 230 is used to collect these optical signals. Additionally, the wafer post-processing unit includes a signal processing and analysis unit. The collected optical signals are converted into digital signals and sent to an image processing system. The system uses algorithms to process and analyze these signals, extracting feature information from the surface of wafer 10, such as the area, number, and location of defects. By comparing the actual acquired image with a preset standard image, the system can identify defects on the surface of wafer 10 and accurately locate their positions. This information is crucial for subsequent production process adjustments and quality control.

[0035] This defect scanning method has high sensitivity, enabling it to detect minute defects on the wafer 10 surface, thus improving product quality. The automated inspection process significantly shortens inspection time and improves production efficiency. It utilizes advanced algorithms and image processing technology to accurately identify and locate defects. Furthermore, this method is a non-contact inspection that does not damage the wafer 10 surface, ensuring product integrity.

[0036] Furthermore, multiple laser emitters 220 are provided to ensure that the laser light is uniformly irradiated onto the surface of the wafer 10, thereby improving the accuracy of the detection.

[0037] Furthermore, the optical signal collector 230 includes a reflected light collector and a scattered light collector. The reflected light collector is used to collect reflected light signals, and the heat dissipation light collector is used to collect scattered light signals.

[0038] The reflected light collector identifies defects by detecting changes in the intensity of reflected light. This method uses short-wavelength deep ultraviolet light as a light source, offering high resolution and suitability for inspecting wafers with intricate patterns, providing high-precision defect detection. The scattered light collector uses heat-dissipated light for detection, identifying particles and defects by detecting scattered light. This method offers faster detection speeds and is suitable for testing large numbers of wafers. It uses a longer-wavelength ultraviolet light source, enabling rapid acquisition of pattern edge shapes.

[0039] Furthermore, the drying chamber 111 is equipped with a propulsion mechanism, and the drying outlet, wafer inlet, and wafer outlet 212 are along a first direction ( Figure 1 (As indicated by the middle arrow) The propulsion mechanism is set so that the wafer 10 can be moved along the first direction.

[0040] In this embodiment, the drying outlet is located at the top of the housing 110, and the housing 210 is connected above the housing 110. The drying outlet, wafer inlet, and wafer outlet 212 are arranged opposite each other. After the drying process contacts the wafer, the pushing mechanism pushes the wafer 10 upward. The wafer 10 enters the scanning cavity 211 through the drying outlet and wafer inlet. After the scanning cavity 211 completes the detection, the pushing mechanism continues to push the wafer 10 upward, causing the wafer 10 to be removed from the wafer outlet 212.

[0041] Furthermore, a support structure is provided at the bottom of the drying chamber 111, which is used to support the wafer 10.

[0042] The support structure enables wafer 10 to remain in an upright position. The support structure is a standard feature in the art and will not be described in detail here.

[0043] Furthermore, the drying chamber 111 is provided with a jet pipe, and multiple nozzles are arranged along the length of the jet pipe. The nozzles are used to spray drying gas onto the wafer 10.

[0044] The surface of wafer 10 can be dried by spraying drying gas onto it. Optionally, the number of nozzles can be three, five, six, seven, or nine, depending on the application requirements. Optionally, multiple nozzles can be spaced equidistantly to ensure more uniform gas distribution.

[0045] Furthermore, the jet pipe includes a first jet pipe and a second jet pipe, which are located on opposite sides of the wafer 10, respectively.

[0046] The first and second jet pipes are used to dry the front and back sides of the wafer 10, respectively. In some embodiments, there can be multiple first jet pipes to dry the front side of the wafer 10, thereby improving the drying efficiency of the front side of the wafer 10. Similarly, there can also be multiple second jet pipes to dry the back side of the wafer 10, thereby improving the drying efficiency of the back side of the wafer 10.

[0047] Furthermore, the length direction of the jet nozzle is perpendicular to the movement direction of the wafer 10.

[0048] Since the jet pipe is fixed in the drying chamber 111, it can dry different positions of the wafer 10 as the wafer 10 moves. Understandably, the direction of movement of the wafer 10 is a first direction, and the length direction of the jet pipe is perpendicular to the first direction.

[0049] Furthermore, the drying gas can be air or nitrogen. Wafer 10 needs to be completely dried after cleaning to prevent surface oxidation and water stains. Using air or nitrogen ensures the wafer 10 surface is dry, avoiding moisture residue and thus maintaining the cleanliness and quality of the wafer 10. Additionally, nitrogen is an inert gas and will not chemically react with the materials on the wafer 10 surface, thus preventing any chemical damage to the wafer 10 during the drying process. Nitrogen is widely used in semiconductor manufacturing due to its non-flammability, non-explosiveness, and safety.

[0050] The above description is merely a preferred embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this utility model should be included within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the scope of the claims.

Claims

1. A wafer post-processing apparatus, characterized by, Comprising: a drying structure (100) comprising a box body (110) having a drying cavity (111) and a drying outlet, the drying outlet and the drying cavity (111) being in communication; a defect detection structure (200) comprising a shell (210) connected with the box body (110), the shell (210) having a scanning cavity (211), a wafer inlet and a wafer outlet (212), the wafer inlet and the wafer outlet (212) being in communication with the scanning cavity (211) respectively, the wafer inlet being in communication with the drying outlet, the scanning cavity (211) being provided with a detection assembly for detecting defects of the wafer (10), the wafer (10) being capable of entering the scanning cavity (211) through the drying outlet and the wafer inlet and moving out through the wafer outlet (212).

2. The wafer post-processing apparatus according to claim 1, characterized by The detection assembly comprises a laser emitter (220) for emitting laser to the surface of the wafer (10) and a light signal collector (230) for collecting light signals.

3. The wafer post-processing apparatus according to claim 2, characterized by The laser emitter (220) is provided with a plurality of.

4. The wafer post-processing apparatus according to claim 2, characterized by The light signal collector (230) comprises a reflected light collector for collecting reflected light signals and a scattered light collector for collecting scattered light signals.

5. The wafer post-processing apparatus according to claim 1, wherein The drying cavity (111) is provided with a pushing mechanism, the drying outlet, the wafer inlet and the wafer outlet (212) are arranged along a first direction, and the pushing mechanism is capable of pushing the wafer (10) to move along the first direction.

6. The wafer post-processing apparatus according to claim 1, wherein The bottom of the drying cavity (111) is provided with a support structure for supporting the wafer (10).

7. The wafer post-processing apparatus according to claim 1, wherein The drying cavity (111) is provided with an air jet pipe, a plurality of nozzles are arranged along the length direction of the air jet pipe, and the nozzles are used for spraying drying gas to the wafer (10).

8. The wafer post-processing apparatus according to claim 7, characterized by The air jet pipe comprises a first air jet pipe and a second air jet pipe, and the first air jet pipe and the second air jet pipe are respectively located on both sides of the wafer (10).

9. The wafer post-processing apparatus according to claim 7, wherein The length direction of the air jet pipe is perpendicular to the moving direction of the wafer (10).

10. The wafer post-processing apparatus according to claim 7, wherein The drying gas is air or nitrogen.

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