Coating apparatus

CN224647043UActive Publication Date: 2026-08-18NATIONAL KAOHSIUNG UNIVERSITY OF SCIENCE & TECHNOLOGY
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Patent Information

Application Number
CN202521328968.7
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-06-26
Publication Date
2026-08-18
Estimated Expiration
2035-06-26

AI Technical Summary

Technical Problem

[0002]现有半导体相关领域的镀膜技术中,其中包含传统溅镀方式、水热法;传统溅镀方式中,材料制作方式需要依比例调配压制,因此材料均匀性会依混和比例产生偏差,也因为需要固定类型的基材,应用层面也会受到限制,再者,因为溅镀设备和真空系统的成本较高,初始投资较大,生产时的成本也会被拉高;而水热合成法利用高温高压的水溶液环境来促进化学反应,从而在基材表面形成薄膜,其反应条件温和,生成的材料具有良好的粒度分布和均匀性,且由于不需要高温和昂贵设备,因此成本相对较低

Benefits of technology

[0015] In summary, this utility model provides a co-deposition device, which is provided with a first target holder and a second target holder. The first target holder and the second target holder simultaneously impact the target material on the target material using AC radio frequency and DC pulse methods, and sputter the atoms or molecules on the target material surface onto the surface of the target sample.

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Abstract

The utility model discloses a kind of co-coating devices, comprising: cavity;Base, the top surface of the cavity inside is set, including bearing plane, the bearing plane is away from the top surface;First target seat, it is set to the side away from the base inside cavity, its side adjacent to the base is equipped with first target material, the first target seat is fired the first target material by magnetron direct current energy towards the base;Second target seat, it is set to the side with the first target material department inside cavity, its side adjacent to the base is equipped with second target material, the second target seat is fired the second target material by alternating current energy towards the base;The first target material and the second target material can be regulated and controlled coating rate as required, to form the film that meets requirement in this way.
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Description

Technical Field

[0001] This utility model relates to a coating apparatus in the semiconductor field, and in particular to an apparatus for simultaneously coating with two independent target materials. Background Technology

[0002] Existing coating technologies in the semiconductor field include traditional sputtering and hydrothermal methods. In traditional sputtering, the material preparation process requires precise mixing and pressing, which leads to deviations in material uniformity depending on the mixing ratio. Furthermore, the application is limited due to the need for a fixed type of substrate. Moreover, the high cost of sputtering equipment and vacuum systems results in a large initial investment, which in turn increases production costs. In contrast, hydrothermal synthesis utilizes a high-temperature, high-pressure aqueous solution environment to promote chemical reactions, thereby forming a thin film on the substrate surface. Its reaction conditions are mild, and the resulting material has good particle size distribution and uniformity. Moreover, since it does not require high temperatures and expensive equipment, its cost is relatively low.

[0003] Another coating method is co-sputtering, which has the advantage of using multiple targets simultaneously for sputtering. It not only retains the advantages of sputtering, but also forms a fairly uniform and thin film with good film quality reproducibility. The working gas used in sputtering is mostly argon (Ar) because of its high chemical passivation, so it is not easy to react chemically with the material. If the material to be sputtered is a compound film, gases that react with the sputtered material, such as oxygen (O2) and nitrogen (N2), can be introduced to react with each other on the substrate to generate the desired compound film. This allows for doping and parameter adjustment for individual materials, providing greater working flexibility compared to traditional sputtering. It can also form a more uniform, flat film with a particle-free surface compared to hydrothermal synthesis.

[0004] The thin film prepared by the coating technology in this case, through optimized control of key process parameters such as the argon-oxygen gas ratio, chamber pressure, and stage rotation speed, successfully achieved both high film uniformity and excellent coating rate. Under these optimal conditions, the dual-gun power output can be stably controlled, thereby ensuring the accuracy and reproducibility of the composite material composition ratio, improving film quality, and enhancing the performance of subsequent components. Utility Model Content

[0005] To address the problems of the aforementioned traditional coating equipment, this invention proposes a co-coating device with the following features: A co-deposition device includes: a cavity; a base disposed on the top surface inside the cavity, including a bearing plane, the bearing plane being away from the top surface; a first target holder disposed inside the cavity on a side away from the base, the first target holder being disposed on a side adjacent to the base, the first target holder firing the first target toward the base via magneto-controlled DC energy, wherein the first target includes gold, silver, copper, aluminum, nickel, tin, zinc, tungsten, zirconium oxide, nickel-vanadium alloy, or silicon nitride; and a second target holder disposed inside the cavity on the same side as the first target, the second target holder being disposed on a side adjacent to the base, the second target holder firing the second target toward the base via AC energy, wherein the second target includes tungsten oxide, titanium dioxide, nickel-vanadium alloy, aluminum nitride, or zinc oxide.

[0006] Furthermore, the bearing plane can be selectively rotated around its vertical axis.

[0007] Furthermore, the DC energy includes high-energy pulse energy.

[0008] Furthermore, the power range of the high-energy pulse energy is between 0 and 700 W.

[0009] Furthermore, the alternating energy includes radio frequency energy.

[0010] Furthermore, the power range of the radio frequency energy is between 0 and 600 W, and its frequency is 13.56 MHz.

[0011] Furthermore, the co-coating device also includes an exhaust port located on the outer wall of the cavity to exhaust the gas remaining inside the cavity.

[0012] Furthermore, the co-coating apparatus further includes an air extraction section, wherein the air extraction section is disposed on one side outside the cavity and is connected to the air extraction port by an air extraction pipe.

[0013] Furthermore, the co-coating device also includes an air inlet located on the outer wall of the cavity.

[0014] Furthermore, the co-coating device further includes an air storage tank, which is disposed on one side of the cavity body and connected to the air inlet by an air supply pipe.

[0015] In summary, this utility model provides a co-deposition device, which is provided with a first target holder and a second target holder. The first target holder and the second target holder simultaneously impact the target material on the target material using AC radio frequency and DC pulse methods, and sputter the atoms or molecules on the target material surface onto the surface of the target sample. Attached Figure Description

[0016] Figure 1 This is a simplified schematic diagram of the present invention; Figure 2 This is a simplified schematic diagram of the present invention, which includes a gas tank and an extraction section. Figure 3 Image of a W / ZnO sample generated using the co-coating equipment described in this utility model; Figure 4 Image of a Zn / SnO3 sample generated by the co-coating equipment described in this utility model. Detailed Implementation

[0017] This invention provides a co-coating device, particularly a co-coating device that simultaneously impacts a target material using AC radio frequency and DC pulse methods.

[0018] To achieve this objective, the implementation method of the co-coating device of this utility model is as follows: A co-deposition device includes: a cavity 1; a base 2 disposed on the top surface inside the cavity 1, including a bearing plane 21, the bearing plane 21 being away from the top surface; a first target holder 3 disposed inside the cavity 1 on the side away from the base 2, the first target holder 3 being disposed on the side adjacent to the base 2, the first target holder 3 being fired toward the base 2 by magnetically controlled DC energy, wherein the first target includes gold, silver, copper, aluminum, nickel, tin, zinc, tungsten, zirconium oxide, nickel-vanadium alloy or silicon nitride, but is not limited thereto; and a second target holder 4 disposed inside the cavity 1 on the same side as the first target holder 3, the second target being disposed on the side adjacent to the base 2, the second target being fired toward the base 2 by AC energy, wherein the second target includes tungsten oxide, titanium dioxide, nickel-vanadium alloy, aluminum nitride or zinc oxide.

[0019] In a preferred embodiment, the internal temperature of cavity 1 is 20-27°C.

[0020] In a preferred embodiment, the base 2 is a platform and can be selectively rotated about its vertical axis.

[0021] In a preferred embodiment, the DC energy comprises high-energy pulsed energy. More preferably, the high-energy pulsed energy is a pulsed laser beam with a power range of 0 to 700 W and a pulse period of 25 μs.

[0022] In a preferred embodiment, the AC energy includes radio frequency (RF) energy. More preferably, the RF energy has a power range of 0 to 600 W and a frequency of 13.56 MHz.

[0023] In a preferred embodiment, the co-coating apparatus further includes an exhaust port 5, which is located on the outer wall of the cavity 1 to exhaust the gas remaining inside the cavity 1. Furthermore, the co-coating apparatus further includes an exhaust section 7 connected to the exhaust port 5 via an exhaust pipe 71 to remove the gas remaining inside the cavity 1.

[0024] In a preferred embodiment, the co-coating apparatus further includes an air inlet 6 disposed on the outer wall of the cavity 1. The co-coating apparatus also includes a gas storage tank 8 connected to the air inlet 6 via a gas supply pipe 81, allowing the gas contained in the gas storage tank 8 to be introduced into the cavity 1. More preferably, the gas in the gas storage tank 8 is Ar or other inert gas. Even more preferably, the gas in the gas storage tank 8 can be a gas that reacts with the sample, such as O2 or N2.

[0025] The following are some embodiments of this utility model, which are only used to represent examples of the implementation of this utility model and should not be used to limit the scope of patent protection of this utility model: Example 1

[0026] Please refer to Figure 1 and Figure 2 A base 2 is disposed on the top of the inner side of the cavity 1. The base 2 includes a bearing plane 21 to support the sample, with one end of the sample away from the top surface of the inner side of the cavity 1. The sample is a silicon or germanium substrate or a substrate containing a protective layer or an insulating layer. Inside the cavity 1, on one side opposite to the base 2, a first target holder 3 and a second target holder 4 are disposed. The target-bearing portions of the first target holder 3 and the second target holder 4 are oriented towards the base 2, so that when the target is impacted, atoms or molecules can be ejected and sputtered onto the surface of the sample. The first target holder 3 impacts the first target with a high-energy laser pulse, with a power output of 55 W. The material of the first target is tungsten (W). The second target holder 4 impacts the second target with radio frequency energy, with a power output of 8 W. W, where the second target material is ZnO; after the sample is fixed on the bearing plane 21, the evacuation unit 7 starts to evacuate the air, and the air inside the cavity 1 is extracted through the evacuation pipe 71 to reduce the chance of the target material reacting with the air when it is impacted, so as to reduce the possibility of the sample being contaminated during sputtering. After the gas in the cavity 1 is extracted, the gas storage tank 8 introduces Ar into the cavity 1 through the gas supply pipe 81. In addition to reducing the reaction and contamination, Ar can also ionize in the cavity to form Ar. 3+ Plasma, Ar 3+ Plasma can further improve sputtering efficiency. During sputtering, to maintain the uniformity of the sample in the coating, the bearing plane 21 rotates around its vertical axis at a speed of 15 rpm. After sputtering, the co-sputtered coating prepared in this invention can be obtained, such as... Figure 3 As shown.

[0027] Example 2

[0028] Please refer to Figure 1 and Figure 2A base 2 is disposed on the top of the inner side of the cavity 1. The base 2 includes a bearing plane 21 to support the sample, with one end of the sample away from the top surface of the inner side of the cavity 1. The sample is a silicon or germanium substrate or a substrate containing a protective layer or an insulating layer. Inside the cavity 1, on one side opposite to the base 2, a first target holder 3 and a second target holder 4 are disposed. The target-bearing portions of the first target holder 3 and the second target holder 4 are oriented towards the base 2, so that when the target is impacted, atoms or molecules can be ejected and sputtered onto the surface of the sample. The first target holder 3 impacts the first target with a high-energy laser pulse, with a power output of 16 W. The material of the first target is Sn. The second target holder 4 impacts the second target with radio frequency energy, with a power output of 50 W. The second target material is ZnO. After the sample is fixed on the bearing plane 21, the evacuation unit 7 starts evacuating the air. The air inside the cavity 1 is extracted through the evacuation pipe 71 to reduce the chance of the target material reacting with the air when it is impacted, thereby reducing the possibility of sample contamination during sputtering. After the gas in the cavity 1 is extracted, the gas storage tank 8 introduces Ar into the cavity 1 through the gas supply pipe 81. In addition to reducing the reaction and contamination, Ar can also ionize in the cavity to form Ar. 3+ Plasma, Ar 3+ Plasma can further improve sputtering efficiency. During sputtering, in order to maintain the uniformity of the sample in the coating, the bearing plane 21 rotates around its vertical axis at a speed of 10 rpm. After sputtering, the co-sputtered coating prepared in this invention can be obtained.

[0029] Example 3

[0030] Please refer to Figure 1 and Figure 2A base 2 is disposed on the top of the inner side of the cavity 1. The base 2 includes a bearing plane 21 to support the sample, with one end of the sample away from the top surface of the inner side of the cavity 1. The sample is a silicon or germanium substrate or a substrate containing a protective layer or an insulating layer. Inside the cavity 1, on one side opposite to the base 2, a first target holder 3 and a second target holder 4 are disposed. The target-bearing portions of the first target holder 3 and the second target holder 4 are oriented towards the base 2, so that when the target is impacted, atoms or molecules can be ejected and sputtered onto the surface of the sample. The first target holder 3 impacts the first target with a high-energy laser pulse, with a power output of 50 W. The material of the first target is Zn. The second target holder 4 impacts the second target with radio frequency energy, with a power output of 20 W. W, wherein the material of the second target is SnO3; after the sample is fixed on the bearing plane 21, the gas extraction section 7 starts to extract the gas, and the air inside the cavity 1 is extracted through the gas extraction pipe 71 to reduce the chance of the target reacting with the air when it is impacted, so as to reduce the possibility of sample contamination during sputtering. After the gas in the cavity 1 is extracted, the gas storage tank 8 introduces Ar into the cavity through the gas supply pipe 81. In addition to reducing the reaction and contamination, Ar can also be ionized in the cavity 1 to form Ar. 3+ Plasma, Ar 3+ Plasma can further improve sputtering efficiency. During sputtering, to maintain the uniformity of the sample in the coating, the bearing plane 21 rotates around its vertical axis at a speed of 15 rpm. After sputtering, the co-sputtered coating prepared in this invention can be obtained, such as... Figure 4 As shown.

[0031] However, the above description is only a preferred embodiment of the present utility model, and should not be construed as limiting the scope of the present utility model. Therefore, any simple equivalent changes and modifications made in accordance with the claims and description of the present utility model shall still fall within the scope of patent protection of the present utility model.

[0032] [Symbol Explanation] 1. Cavity 2. Base 21 Bearing plane 3 First Target Holder 4 Second Target Holder 5. Air extraction port 6 air intakes 7. Exhaust Unit 71. Extraction pipe 8. Gas storage tank 81 Gas Pipeline

Claims

1. A co-coating apparatus, characterized in that, Include: cavity; A base is disposed on the top surface inside the cavity and includes a bearing plane that is away from the top surface; A first target holder is disposed inside the cavity on the side away from the base, and a first target is disposed on the side adjacent to the base. The first target holder fires the first target toward the base through magnetically controlled DC energy. The first target includes gold, silver, copper, aluminum, nickel, tin, zinc, tungsten, zirconium oxide, nickel-vanadium alloy or silicon nitride. The second target holder is located inside the cavity on the same side as the first target part. The second target is provided on the side adjacent to the base. The second target holder fires the second target toward the base through alternating current energy. The second target includes tungsten oxide, titanium dioxide, nickel-vanadium alloy, aluminum nitride, or zinc oxide.

2. The co-coating apparatus according to claim 1, characterized in that, The bearing plane can be selectively rotated around its vertical axis.

3. The co-coating apparatus according to claim 1, characterized in that, This DC energy includes high-energy pulse energy.

4. The co-deposition apparatus according to claim 3, characterized in that, The power range of this high-energy pulse is between 0 and 700 W.

5. The co-coating apparatus according to claim 1, characterized in that, This alternating energy includes radio frequency energy.

6. The co-coating apparatus according to claim 5, characterized in that, The power range of this radio frequency energy is between 0 and 600W, and its frequency is 13.56 MHz.

7. The co-coating apparatus according to claim 1, characterized in that, It also includes an exhaust port, which is located on the outer wall of the cavity to exhaust the gas remaining inside the cavity.

8. The co-coating apparatus according to claim 7, characterized in that, It also includes an air extraction section, which is located on one side of the outside of the cavity and connected to the air extraction port by an air extraction pipe.

9. The co-coating apparatus according to claim 1, characterized in that, It also includes an air inlet, which is located on the outer wall of the cavity.

10. The co-deposition apparatus according to claim 9, characterized in that, It also includes an air storage tank, which is located on one side of the cavity body and connected to the air inlet by an air supply pipe.