A planar magnetron sputtering device

Abstract

The utility model discloses a plane magnetron sputtering device, especially relates to a plane magnetron sputtering device with magnetic field adjusting function. The device includes main body, motor, base, target material, sets up rotating magnetic circuit subassembly and electromagnetic coil in the main body inside, and rotating magnetic circuit subassembly is used for producing main sputtering magnetic field on the sputtering working surface of target material. The electromagnetic coil of utility model encircles rotating magnetic circuit subassembly and can produce an auxiliary magnetic field when electrifying, and the auxiliary magnetic field can superimpose with main sputtering magnetic field, thereby the magnetic field form of final action on target material surface carries out dynamic adjustment. The utility model passes through the additional electromagnetic coil of independent control, solved the problem of target material etching uneven, low utilization rate caused by traditional fixed magnetic field, improved the film performance of plane magnetron sputtering device on deep hole, recess and other three-dimensional complex appearance substrate.

Description

Technical Field

[0001] This application relates to the field of vacuum coating equipment technology, and in particular to a planar magnetron sputtering device with magnetic field adjustment function. Background Technology

[0002] Planar magnetron sputtering, as a mainstream physical vapor deposition (PVD) method, is widely used in optics, electronics, decorative coatings, and many other fields. Its basic principle is to use the synergistic effect of electric and magnetic fields in a vacuum environment to ionize the working gas (such as argon) to form plasma, and then use the high-energy ions in the plasma to bombard the target surface, causing the target atoms to be sputtered out and finally deposited on the substrate to form a thin film.

[0003] In traditional planar magnetron sputtering apparatuses, a fixed, closed magnetic field is typically generated on the target surface using permanent magnet assemblies to improve sputtering efficiency. However, this design has inherent drawbacks in practical applications. First, due to the fixed magnetic field shape, the plasma tends to concentrate in a specific annular region on the target surface, leading to over-etching of that region while material in other regions remains underutilized. This not only results in significant waste of target material and reduced utilization, but also affects the stability of the sputtering process due to uneven etching.

[0004] More importantly, the fixed magnetic field generated by permanent magnets typically confines the magnetic field lines to the vicinity of the target surface, making it difficult to adjust according to different process requirements. This results in difficulties in achieving highly uniform thin film deposition when coating large-area substrates. When processing substrates with complex three-dimensional morphologies such as deep holes and grooves, the traditional magnetic field cannot effectively guide the plasma into the deep holes due to the line-of-sight principle of sputtered atoms, leading to severe geometric shielding effects. This prevents the formation of effective, dense thin films in areas such as the sidewalls of deep holes, greatly limiting the application of magnetron sputtering technology in high-end manufacturing. Therefore, how to effectively adjust the magnetic field to improve sputtering uniformity and solve the challenges of coating complex structures has become an urgent technical problem to be solved in this field. Utility Model Content

[0005] This invention provides a planar magnetron sputtering device, which aims to solve the technical problems of uneven target etching, low utilization rate, and difficulty in effectively coating substrates with complex three-dimensional morphology due to the fixed and unadjustable magnetic field shape.

[0006] To achieve the above objectives, this utility model provides a planar magnetron sputtering device, comprising: The system comprises a first motor, a main body, an electromagnetic coil, a target material, and a base; wherein the first motor is connected to a rotating magnetic circuit assembly for driving the rotating magnetic circuit assembly to rotate; the rotating magnetic circuit assembly is located inside the main body and is used to generate a main sputtering magnetic field on the sputtering working surface; the electromagnetic coil is located inside the main body and surrounds the rotating magnetic circuit assembly; when the electromagnetic coil is energized, it generates an auxiliary magnetic field to adjust the main sputtering magnetic field; the target material is located at the lower part of the main body, and the lower surface of the target material is the sputtering working surface; the base is connected to the lower part of the main body.

[0007] Compared with traditional technical solutions, this utility model has at least the following beneficial effects: Firstly, it improves the etching uniformity of the target material, enhancing process stability and material utilization. This invention dynamically intervenes in the main sputtering magnetic field generated by the permanent magnet assembly by setting up an independently energized and controllable electromagnetic coil. This allows operators to change the distribution of the magnetic field on the target surface as needed, enabling the target material to be consumed more uniformly.

[0008] Secondly, it achieves effective film deposition on substrates with complex three-dimensional morphologies such as deep holes and grooves, expanding its application range. The auxiliary magnetic field generated by the electromagnetic coil of this invention can be superimposed on the main magnetic field to form an adjustable magnetic field. This adjustable magnetic field can guide some magnetic field lines and plasma from the target surface to the vicinity of the substrate, creating an environment for secondary processing of sputtered neutral target atoms. After being ionized by the plasma during flight, the target atoms are transformed into charged target ions. Under the combined guidance and acceleration of the electric and magnetic fields, these target ions can penetrate deep hole sidewalls and other areas with a higher probability. Attached Figure Description

[0009] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0010] Figure 1 This is a three-dimensional schematic diagram of a planar magnetron sputtering device provided in an embodiment of this application; Figure 2 yes Figure 1 Another schematic diagram of the planar magnetron sputtering device shown; Figure 3 This is a schematic diagram of the target material for the planar magnetron sputtering apparatus of this application; Figure 4 This is a cross-sectional view of the main body of the planar magnetron sputtering apparatus of this application; Figure 5 yes Figure 4 A partial enlarged view of the cross-section, section A; Figure 6 This is a schematic diagram of the electromagnetic coil of the planar magnetron sputtering apparatus of this application; Figure 7 This is another schematic diagram of the electromagnetic coil of the planar magnetron sputtering device of this application; Figure 8 This is a schematic diagram of the cooling backplate of the planar magnetron sputtering apparatus of this application; Figure 9 This is a schematic diagram of the mounting plate of the planar magnetron sputtering device of this application.

[0011] Figure label: 1. Planar magnetron sputtering device; 111. First motor; 1111. First motor output shaft; 1112. First motor drive shaft; 112. Second motor; 12. Main body; 121. Electromagnetic coil; 1211a. First terminal; 1211b. Second terminal; 122. Top cover; 1221. Universal lifting ring; 123. Outer shell; 124. Insulating component; 125. Cooling back plate; 1251. Liquid inlet; 1252. Liquid outlet; 1261. Rotating chassis; 1262. Magnetic back plate; 1263. Permanent magnet assembly; 1264. Protective cover; 13. Target material; 131. Sputtering working surface; 14. Base; 15. Baffle; 16. Mounting plate; 161. First through hole; 162. Second through hole; 163. First threaded hole array; 164. Second threaded hole array. Detailed Implementation

[0012] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It should be particularly noted that the following embodiments are for illustrative purposes only and do not limit the scope of the application. Similarly, the following embodiments are only some, not all, embodiments of the present application, and all other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of the present application.

[0013] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0014] Please refer to this application. Figures 1 to 9This application provides a planar magnetron sputtering device 1, including: a first motor 111, a main body 12, an electromagnetic coil 121, a target 13, and a base 14; wherein, the first motor 111 is connected to a rotating magnetic circuit assembly to drive the rotating magnetic circuit assembly to rotate; the rotating magnetic circuit assembly is disposed in the main body 12 and is used to generate a main sputtering magnetic field on the sputtering working surface 131 of the target 13; the electromagnetic coil 121 is disposed in the main body 12 and surrounds the rotating magnetic circuit assembly; when the electromagnetic coil 121 is energized, it generates an auxiliary magnetic field to adjust the main sputtering magnetic field; the target 13 is located at the lower part of the main body 12, and the lower surface of the target 13 is the sputtering working surface 131; the base 14 is connected to the lower part of the main body 12.

[0015] Please see Figures 1 to 9 In some embodiments, the electromagnetic coil 121 is wrapped around the outside of the rotating magnetic circuit assembly in a plane perpendicular to the axis of rotation of the rotating magnetic circuit assembly.

[0016] Please see Figure 1 and Figure 2 ,in, Figure 1 This is a three-dimensional schematic diagram of a planar magnetron sputtering device 1 provided in an embodiment of this application. Figure 2 Then it is Figure 1 This is another schematic diagram of the planar magnetron sputtering apparatus. These two figures together illustrate the overall appearance and external component layout of a specific embodiment of this application.

[0017] like Figure 1 As shown, the planar magnetron sputtering device 1 is a highly integrated functional module that can be directly placed in a vacuum chamber. Its core part is a roughly cylindrical main body 12. An annular base 14 is provided on the outside of the main body 12 for fixing the main body 12 to the mounting plate 16.

[0018] In some embodiments, the planar magnetron sputtering apparatus 1 further includes a second motor 112 and a baffle 15, wherein the second motor 112 is tractively connected to the baffle 15 to drive the baffle 15; wherein, in the pre-sputtering stage, the baffle 15 can be moved below the sputtering working surface 131 to shield the sputtering working surface 131, thereby intercepting unstable initial sputtered particles; in the formal sputtering stage, the baffle 15 can be moved away from the sputtering working surface 131 to allow the particles sputtered by the sputtering working surface 131 to be deposited on the substrate.

[0019] In this embodiment, to achieve automated and optimized control of the sputtering process, the planar magnetron sputtering apparatus 1 is equipped with an independent drive mechanism. Specifically, a first motor 111 is provided on the top of the main body 12, which drives the rotating magnet assembly inside the main body 12 to rotate. A second motor 112 is also fixed to the side of the main body 12 via an extension of a mounting plate 16.

[0020] The second motor 112 drives a baffle 15 located directly below the main body 12. In this embodiment, the baffle 15 is blade-shaped and plays an important role in the entire sputtering process. Specifically, the baffle 15 is driven by the second motor 112 and can rotate around a fixed axis to shield the sputtering working surface 131 of the target 13.

[0021] Please also refer to Figure 3 The figure shows a schematic diagram of the target 13 in an embodiment of this application. The target 13 is made of a sputterable material. In this embodiment, its lower surface is defined as the sputtering working surface 131. Specifically, the magnetron sputtering scenario includes two stages: pre-sputtering and formal sputtering. In the pre-sputtering stage, since there may be oxides or contaminants on the surface of the target 13 and the plasma has not yet reached a stable state, the initial sputtered particles are of poor quality. To prevent these defective particles from contaminating the final workpiece (substrate), the second motor 112 drives the baffle 15 to rotate directly below the main body 12, completely blocking the sputtering working surface 131. In this way, all the initially sputtered particles are intercepted by the baffle 15, thereby protecting the substrate and cleaning the target 13. Then, in the formal sputtering stage, when the plasma is stable and the surface of the target 13 is cleaned, the second motor 112 drives the baffle 15 to rotate, moving it away from directly below the sputtering working surface 131. At this point, the stable and pure atoms generated by the sputtering working surface 131 can reach the substrate unimpeded to deposit and form a high-quality thin film. Therefore, the coordinated operation of the baffle 15 and the second motor 112 can ensure the final coating quality and process stability of the embodiments of this application.

[0022] Please see Figure 4 and Figure 5 ,in, Figure 4 This is a cross-sectional view of the main body 12 of the planar magnetron sputtering apparatus 1 in an embodiment of this application. Figure 5 Then it is Figure 4 A magnified view of a portion of region A in the middle. Figure 5 The specific structure of the rotating magnetic circuit assembly inside the main body 12 is shown more clearly.

[0023] like Figure 4 As shown in the cross-sectional view, the vertical structural layout of this embodiment is clearly illustrated. At the top, a first motor 111 is provided, which serves as a rotational power source. The first motor 111 includes its own output shaft, namely the first motor output shaft 1111, which is connected to a vertically downward first motor drive shaft 1112 via a coupling or similar transmission mechanism, thereby transmitting power to the interior of the main body 12.

[0024] In some embodiments, the body 12 further includes an upper cover plate 122; the electromagnetic coil 121 includes at least two terminals, which pass through holes provided in the upper cover plate 122 and extend to the outside of the body 12 for electrical connection with an external power source.

[0025] At the top of the main body 12, there is an upper cover plate 122, which constitutes the upper sealing structure of the main body 12. From an external view (e.g.) Figure 1 As can be seen in the image, a universal lifting ring 1221 is also fixed to the upper surface of the top cover plate 122 to facilitate the hoisting operation of the entire device. At the lower part of the main body 12, a cooling back plate 125 and a target material 13 are arranged in sequence.

[0026] To more clearly reveal the structure by which the magnetic field is generated and adjusted in the embodiments of this application, please refer to the following references. Figure 5 . Figure 5 for Figure 4 The enlarged schematic diagram of area A in the middle shows in detail the stacking and coordination of the various functional components inside the main body 12.

[0027] In some embodiments, the main body 12 further includes a housing 123, an insulating member 124, and a cooling backplate 125; wherein the insulating member 124 and the cooling backplate 125 are disposed within the housing 123, the insulating member 124 is disposed above the cooling backplate 125, the cooling backplate 125 is disposed above the target material 13, and the electromagnetic coil 121 is housed within the insulating member 124; the cooling backplate 125 is used to cool the target material 13 when the sputtering working surface 131 is bombarded by ions and generates heat.

[0028] Figure 5 It can be clearly seen that the outermost layer of the main body 12 is a shell 123 that serves as structural support and sealing. Adjacent to the inner wall of the shell 123, an annular insulating element 124 is provided. This insulating element 124 is made of a material with high dielectric strength and heat resistance. Its core function is to reliably electrically isolate the internal working components, which are at a high negative potential, from the shell 123, which is normally at a ground potential, thereby ensuring the safety and stability of the equipment operation.

[0029] An electromagnetic coil 121 is arranged around the inner side of the insulating member 124. The electromagnetic coil 121 can be connected to its terminals (such as...) Figure 6 The first terminal 1211a and the second terminal 1211b shown are connected to an external independent power supply. When energized, the electromagnetic coil 121 generates an auxiliary magnetic field that can penetrate the components inside the main body 12 and effectively superimpose in space with the main sputtering magnetic field generated by the permanent magnet assembly 1263, thereby achieving precise adjustment of the shape, intensity and distribution of the magnetic field that ultimately acts on the surface of the target material 13.

[0030] In some embodiments, the rotating magnetic circuit assembly is housed inside the electromagnetic coil 121 and disposed above the cooling back plate 125; the rotating magnetic circuit assembly is used to form a main sputtering magnetic field, and through its own rotation, the main sputtering magnetic field sweeps the sputtering working surface 131 to achieve uniform sputtering of the target material 13.

[0031] The rotating magnetic circuit assembly is a rotatable, highly integrated component located in the central region surrounded by the electromagnetic coil 121. In some embodiments, the rotating magnetic circuit assembly includes: a rotating chassis 1261 connected to the drive shaft of the first motor 111; a magnetic backplate 1262; and a permanent magnet assembly 1263. The magnetic backplate 1262 is disposed below the rotating chassis 1261 to converge the magnetic lines of force on the back of the permanent magnet assembly 1263, thereby enhancing the strength of the main sputtering magnetic field. The permanent magnet assembly 1263 is disposed below the magnetic backplate 1262. This rotating magnetic circuit assembly is a functional whole, with its internal components tightly stacked from top to bottom (from away from the target 13 to closer to the target 13) and working collaboratively. Its uppermost layer is a rotating chassis 1261, which serves as the load-bearing foundation and power input of the entire rotating magnetic circuit assembly and is connected to the drive shaft 1112 of the first motor 111.

[0032] Below the rotating chassis 1261, a magnetic backplate 1262 is fixed. The magnetic backplate 1262 is usually made of a soft iron or other material with high magnetic permeability. Its main function is to provide a low magnetic resistance closed loop for the magnetic lines of force on the back of the permanent magnet assembly 1263, effectively preventing the ineffective leakage of the magnetic field to the rear (i.e., away from the target 13), thereby converging the magnetic lines of force and guiding them forward, significantly enhancing the effective magnetic field strength that ultimately acts on the target 13.

[0033] Located immediately below the magnetic backplate 1262 is a permanent magnet assembly 1263 that generates the main sputtering magnetic field. This assembly typically consists of multiple permanent magnet blocks arranged in a specific magnetization direction to form a closed magnetic field with a specific shape above the sputtering working surface 131 of the target 13.

[0034] In some embodiments, the rotating magnetic circuit assembly further includes a protective cover 1264 disposed below the permanent magnet assembly 1263, and the peripheral portion of the protective cover 1264 extends upward along the sidewall of the permanent magnet assembly 1263 to accommodate the permanent magnet assembly 1263.

[0035] Finally, a protective cover 1264 is provided below the permanent magnet assembly 1263. The protective cover 1264 is also made of magnetically conductive material. Its main function is to further constrain the magnetic field generated by the permanent magnet assembly 1263, making its shape more in line with the process requirements, and at the same time, it provides physical protection for the permanent magnet assembly 1263.

[0036] As mentioned above, Figure 5 The disclosed internal structure, through an externally controllable electromagnetic coil 121, cooperates with an internally rotatable rotating magnetic circuit assembly composed of multiple functional components, together forming the technical solution for achieving dynamic adjustment of the magnetic field in this application.

[0037] Please refer to further information. Figure 6 and Figure 7 These two figures illustrate in detail the specific structure and installation method of the electromagnetic coil 121 in the embodiments of this application.

[0038] Please see Figure 6 The figure shows a schematic diagram of the independent structure of the electromagnetic coil 121. As shown, the electromagnetic coil 121 is structurally a ring-shaped integral unit, wound with a conductive material (such as oxygen-free copper). To achieve electrical connection with an external power source, the electromagnetic coil 121 has at least two terminals. In this embodiment, a first terminal 1211a and a second terminal 1211b are specifically shown, which serve as the current input and output terminals, respectively, forming a basic power supply circuit.

[0039] It will be understood by those skilled in the art that the specific structure of the electromagnetic coil 121 is not limited to that shown in this embodiment. For example, its windings can use wires of different specifications, or hollow conductors can be used to allow the passage of cooling medium, in order to adapt to the heat dissipation requirements under different power levels. Similarly, the number and form of the terminals can also be adjusted according to the actual design. For example, multiple terminals can be set to achieve segmented power supply, thereby generating a more complex gradient magnetic field; or an independent grounding terminal can be added to improve electrical safety. These are all equivalent substitutions or improvements that can be conceived by those skilled in the art without inventive effort, and should all fall within the protection scope of this application.

[0040] Next, please combine... Figure 7 For clarity, the figure illustrates the state of the electromagnetic coil 121 after it is installed in the main body 12. To connect the electromagnetic coil 121, sealed inside the main body 12, to an external power source (not shown), this embodiment employs a specific lead-out structure. The first terminal 1211a and the second terminal 1211b of the electromagnetic coil 121 pass through pre-drilled holes in the upper cover plate 122 of the main body 12 and extend upwards to the outside of the main body 12. This design, by making the electrical connection at the top of the main body 12, facilitates external wiring while ensuring the neatness of the lateral space of the main body 12. In actual assembly, the locations where the terminals pass through the upper cover plate 122 typically employ sealed and insulated components such as vacuum power supply to ensure the vacuum seal within the entire main body 12.

[0041] To further clarify the working principle of the planar magnetron sputtering device 1 of this application and its beneficial effects, the following will be combined with... Figures 4 to 7 Provide a detailed functional description.

[0042] In traditional magnetron sputtering technology, the apparatus typically relies on a fixed magnetic circuit system composed of permanent magnets. During operation, a high voltage is applied between the target 13 and the substrate (workpiece), forming a main electric field. When the vacuum chamber is filled with working gases such as argon, the small number of initial electrons present in the space are accelerated under the influence of the electric field. At the same time, they are also constrained by the closed magnetic field (Lorentz force) generated by the permanent magnet assembly 1263 on the surface of the target 13, thus undergoing a long-term, long-path spiral motion near the surface of the target 13. During this motion, these high-energy electrons collide with neutral argon atoms, ionizing them and generating positively charged argon ions and more secondary electrons, thereby triggering an avalanche effect and forming a stable plasma.

[0043] Since the mass of argon ions is much greater than that of electrons, their trajectory is less affected by the magnetic field and is mainly accelerated by the main electric field. This causes the argon ions to bombard the surface of the cathode target 13 at high speed. Through momentum exchange, the argon ions sputter atoms (such as titanium atoms) from the surface of the target 13. These uncharged neutral target atoms fly in an approximately straight line with a certain initial kinetic energy and eventually deposit on the substrate located below the target 13 to form a thin film. This is the traditional magnetron sputtering scheme.

[0044] However, traditional rotating magnetic field solutions have the following drawbacks when facing the increasingly sophisticated demands of modern coating processes: Firstly, the magnetic field shape is not adjustable. In these traditional solutions, although the rotation of the permanent magnet assembly 1263 driven by the motor can improve the etching uniformity of the target material 13 to some extent, the shape and intensity of the magnetic field generated by the permanent magnet assembly 1263 itself are fixed after manufacturing. This "rotating fixed magnetic field" cannot be optimized and adjusted in real time and online according to different target materials, gas pressures, or specific film requirements. Operators cannot actively intervene in the distribution of the magnetic field to further suppress electric arcs, optimize plasma density, or more precisely control the thickness distribution of the thin film. This makes the device lack sufficient adjustment flexibility when pursuing ultimate uniformity or dealing with complex process windows.

[0045] Secondly, traditional methods cannot effectively handle coating scenarios with complex three-dimensional morphologies, especially in deep-hole coating. Whether static or rotating, the magnetic field of a permanent magnet is strictly designed to close near the surface of the target 13, with the core purpose of confining electrons to improve sputtering efficiency. This design also fails to effectively guide plasma from the vicinity of the target 13 to the substrate area several centimeters or even further away. The sputtered neutral target atoms still follow an unguided, linear propagation path, like light rays. When the substrate surface has structures such as deep holes, grooves, or steps, these atoms can only reach the bottom of the hole or the surface directly opposite the target 13, and are unlikely to land on the sidewalls of the hole—this is the so-called "geometric shielding effect." This effect prevents the formation of effective thin films in critical areas such as the sidewalls of deep holes, or results in a poor-quality film layer with a loose physical structure and poor adhesion. This defect makes traditional magnetron sputtering technology with rotating magnetic fields perform poorly in high-end manufacturing fields such as microelectronics, precision molds, and biomedical devices, where surface modification of complex structures is required.

[0046] Therefore, traditional rotating magnetic field schemes suffer from drawbacks such as "unadjustable magnetic field shape" and "poor adaptability to complex three-dimensional morphology." This application, however, introduces an independently controllable electromagnetic coil 121 based on existing rotating permanent magnet components. This coil works in conjunction with the internal rotating magnetic circuit components, fundamentally overcoming the shortcomings of traditional rotating magnetic field schemes through dynamic adjustment of the magnetic field.

[0047] As previously described, the planar magnetron sputtering apparatus 1 of this application also includes a rotating magnetic circuit assembly driven by a first motor 111. The permanent magnet assembly 1263 within this assembly is responsible for generating a main sputtering magnetic field above the sputtering working surface 131 of the target 13. During operation, the synergistic effect of the electric field and the rotating main sputtering magnetic field ionizes argon gas to form plasma, which then bombards the target 13, sputtering neutral target atoms. In this application, when a specific current is applied to the electromagnetic coil 121, an auxiliary magnetic field is generated. This auxiliary magnetic field is spatially superimposed on the main sputtering magnetic field generated by the permanent magnet assembly 1263, thereby changing the magnetic field originally closed on the surface of the target 13 into a "non-equilibrium" magnetic field. Some of the magnetic field lines of this regulated, non-equilibrium magnetic field extend from the surface of the target 13 to the vicinity of the substrate below.

[0048] The adjustable unbalanced magnetic field in this embodiment performs excellently in solving complex processes such as deep hole coating. Its specific advantage lies in "secondary processing" (i.e., ionization in flight), which can be broken down into the following steps: First, a near-substrate plasma environment with a high ionization rate is created. When the electromagnetic coil 121 is energized, the auxiliary magnetic field it generates is superimposed on the main magnetic field of the permanent magnet assembly 1263, causing some magnetic field lines to no longer close to the surface of the target material 13, but to extend towards the substrate and terminate near the substrate. These extended magnetic field lines capture and guide high-energy electrons in the plasma, forcing them to move along this path, thereby forming a plasma region with significantly enhanced electron density near the substrate where the plasma density was originally extremely low.

[0049] Secondly, neutral target atoms (e.g., titanium atoms) sputtered from the surface of target 13, carrying high kinetic energy, will inevitably pass through the enhanced near-substrate plasma region as they fly towards the substrate. In this region, a neutral target atom has a very high probability of colliding with a high-energy electron bound there by the magnetic field. Once the collision energy is high enough, the neutral target atom will lose its outer electrons, thus transforming into a positively charged target ion (e.g., a titanium ion).

[0050] Next, the movement of the newly generated target ions will be affected by electric and magnetic fields. Specifically, since the substrate is usually subjected to a negative bias, a local electric field with extremely high intensity will be formed in front of the substrate. This electric field will exert a strong electrostatic attraction on the positively charged target ions, with the direction nearly perpendicular to the substrate surface. This force is the main source driving the ions to attach to the substrate. At the same time, the target ions will also be affected by the magnetic field lines extending to this location. The Lorentz force will prevent them from deviating from the path of the magnetic field lines, causing them to move in a spiral motion along the direction of the magnetic field lines, ultimately achieving effective deposition on the sidewalls of the deep holes.

[0051] Under the combined influence of electric and magnetic fields, these "precision-guided" target ions can penetrate deep holes or grooves on the substrate surface at high speed and with a higher probability. More importantly, since the sheath electric field is perpendicular to all surfaces, including the hole sidewalls, these ions are still accelerated by the electric field and collide with the sidewalls after entering the deep holes. Ultimately, a dense and strongly adherent thin film is formed on the sidewalls of the deep holes, which are completely inaccessible to conventional neutral atoms.

[0052] In summary, the planar magnetron sputtering apparatus 1 of this application has at least the following advantages compared with the prior art: First, it significantly improves the coating capability for substrates with complex three-dimensional topography, especially the coating capability for deep holes. This application uses an adjustable magnetic field generated by an electromagnetic coil 121 to achieve "secondary processing" (ionization) of target atoms near the substrate, and utilizes the synergistic effect of electric and magnetic fields to guide these ionized target particles to areas that traditional sputtering methods cannot reach, such as the sidewalls of deep holes, thereby preparing a uniform and dense thin film on the surface of complex structures.

[0053] Secondly, it improves the etching uniformity and utilization rate of the target material. Users can adjust the magnitude and direction of the current in the electromagnetic coil 121 to affect the shape and distribution of the magnetic field, thereby controlling the etching uniformity of the target material 13 surface.

[0054] Finally, the planar magnetron sputtering apparatus 1 of this application greatly enhances the process flexibility and controllability. Compared to traditional solutions that rely on a fixed rotating magnetic field, this application only requires an external power supply to adjust the current of the electromagnetic coil 121 in real time, thereby affecting the main sputtering magnetic field. This dynamic adjustment method allows operators to find the optimal process parameters according to different target materials, gas environments, and coating requirements, thereby achieving precise control over the coating process.

[0055] Please see Figure 8 , Figure 8 This is a schematic diagram of the independent structure of the cooling backplate 125 in an embodiment of this application. The cooling backplate 125 is the main body 12 (see...). Figure 4 A key component inside the target 13, its main function is to efficiently and uniformly dissipate the heat generated by ion bombardment during the sputtering process, thereby ensuring the structural stability of the target 13 and the continuity of the sputtering process.

[0056] like Figure 8 As shown, the cooling backplate 125 is structurally a generally disk-shaped plate, typically made of a metal material with excellent thermal conductivity (such as oxygen-free copper or aluminum alloy). To facilitate the circulation of the cooling medium, cooling channels are present inside the cooling backplate 125 to define the flow path of the cooling medium. In this embodiment, the cooling channels exhibit a complex labyrinthine or spiral structure. This design forces the cooling medium to travel a longer path within the plate, thereby increasing its contact area and contact time with the plate, significantly improving heat exchange efficiency.

[0057] In some embodiments, the sidewall of the cooling back plate 125 is provided with an inlet 1251 and an outlet 1252; the inlet 1251 and the outlet 1252 are connected to the cooling channel inside the cooling back plate 125, so that the cooling medium can flow into the cooling channel from the inlet 1251, flow through the interior of the cooling back plate 125, and finally flow out from the outlet 1252.

[0058] To enable connection to an external cooling circulation system, an inlet 1251 and an outlet 1252 are integrally formed on the side wall of the cooling back plate 125. Both ports are directly connected to the internal cooling channels. The inlet 1251 serves as the inlet for the cooling medium (e.g., cooling water), while the outlet 1252 serves as the outlet for the cooling medium.

[0059] In actual operation, the external cooling system is connected to the inlet 1251 and outlet 1252 via pipes. Low-temperature cooling medium is pumped in through the inlet 1251, then enters the internal cooling channels, and flows thoroughly throughout the cooling backplate 125 along a pre-designed labyrinthine path. During this process, the cooling medium efficiently absorbs heat conducted from the target material 13 through thermal convection. Finally, the cooling medium, having absorbed a large amount of heat and increased in temperature, flows out through the outlet 1252 and is returned to the external cooling system for further cooling, thus forming a continuous and efficient closed-loop cooling cycle.

[0060] Please see Figure 9 , Figure 9 This is a schematic diagram of the structure of the mounting plate 16 in an embodiment of this application. In some embodiments, the planar magnetron sputtering device 1 further includes a mounting plate 16; the mounting plate 16 has a first through hole 161 for the main body 12 to pass through, and a second through hole 162 for the output shaft of the second motor 112 to pass through; and a first threaded hole array 163 is provided around the first through hole 161, and a second threaded hole array 164 is provided around the second through hole 162.

[0061] like Figure 9 As shown, the mounting plate 16 in this embodiment is a generally rectangular plate. Multiple through holes with different functions are provided on the mounting plate 16 according to installation requirements. Specifically, a larger first through hole 161 is provided in the central area of ​​the mounting plate 16. The size and position of this first through hole 161 are consistent with those of the main body 12 (see Figure 16). Figure 1 The base 14 of the mounting plate 16 is fitted with the target 13, and its main function is to provide space for the sputtering channel of the target 13 and the lower structure of the main body 12 to pass through. On one side of the mounting plate 16, a smaller second through hole 162 is also provided, which is used for the second motor 112 (see...) Figure 1 The output shaft or its connecting parts pass through it.

[0062] To ensure a secure fixation of the device, an array of holes for fastener engagement is provided around these through holes. Specifically, a first threaded hole array 163 consisting of multiple threaded holes is arranged around the first through hole 161. Similarly, a second threaded hole array 164 consisting of multiple threaded holes is also provided around the second through hole 162. The positions of these threaded hole arrays correspond to the pre-set holes on the base 14 of the device body 12 and the mounting flange of the second motor 112, so as to facilitate connection and fixation using fasteners such as bolts.

[0063] Those skilled in the art will understand that the structure used to achieve fixation is not limited to the threaded hole array shown in this embodiment. Without creative effort, various equivalent technical solutions can be employed to achieve the same or similar fixing function. For example, these threaded holes can be replaced with unthreaded smooth holes, and threaded posts can be provided on the mating base 14; alternatively, other connection methods known in the art, such as snap-fits, calipers, or quick-locking mechanisms, can be used to achieve fixation between the mounting plate 16 and the device body 12 and the vacuum chamber.

[0064] It should be noted that the terms "first," "second," and "third" in this application are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0065] The above description is only a part of the embodiments of this application and does not limit the scope of protection of this application. Any equivalent device or equivalent process transformation made based on the content of this application specification and drawings, or direct or indirect application in other related technical fields, are similarly included in the patent protection scope of this application.

Claims

1. A planar magnetron sputtering device, characterized by, include: First motor; The first motor is connected to the rotating magnetic circuit assembly in a transmission connection to drive the rotating magnetic circuit assembly to rotate; main body; The rotating magnetic circuit assembly is disposed within the main body and is used to generate the main sputtering magnetic field on the sputtering working surface; Electromagnetic coil; The electromagnetic coil is disposed within the main body and surrounds the rotating magnetic circuit assembly; when energized, the electromagnetic coil generates an auxiliary magnetic field for adjusting the main sputtering magnetic field; Target material; The target is located at the lower part of the main body, and the lower surface of the target is the sputtering working surface; Base; The base is connected to the lower part of the main body.

2. A planar magnetron sputtering device according to claim 1, wherein The electromagnetic coil is located around the outside of the rotating magnetic circuit assembly in a plane perpendicular to the axis of rotation of the rotating magnetic circuit assembly.

3. A planar magnetron sputtering device according to claim 1, wherein The main body also includes an upper cover plate; The electromagnetic coil includes at least two terminals that pass through holes in the upper cover and extend to the outside of the body for electrical connection with an external power source.

4. A planar magnetron sputtering device according to claim 1, wherein The planar magnetron sputtering device further includes a second motor and a baffle, wherein the second motor is connected to the baffle to drive the baffle; In the pre-sputtering stage, the baffle can be moved below the sputtering working surface to block the sputtering working surface, thereby intercepting unstable initial sputtered particles; During the formal sputtering stage, the baffle can be moved away from the sputtering working surface to allow particles sputtered from the sputtering working surface to deposit on the substrate.

5. A planar magnetron sputtering device according to claim 1, wherein The main body also includes a shell, insulating components, and a cooling backplate; The insulating component and the cooling backplate are disposed within the housing, the insulating component is disposed above the cooling backplate, the cooling backplate is disposed above the target material, and the electromagnetic coil is housed within the insulating component. The cooling backplate is used to cool the target material when the sputtering working surface is bombarded by ions and generates heat.

6. The planar magnetron sputtering apparatus according to claim 5, characterized in that, The cooling back plate has a liquid inlet and a liquid outlet on its side wall; The liquid inlet and the liquid outlet are connected to the cooling channel inside the cooling back plate, so that the cooling medium can flow into the cooling channel from the liquid inlet, flow through the interior of the cooling back plate, and finally flow out from the liquid outlet.

7. A planar magnetron sputtering device according to claim 5, wherein The rotating magnetic circuit assembly is housed inside the electromagnetic coil and positioned above the cooling backplate. The rotating magnetic circuit assembly is used to form the main sputtering magnetic field, and through its own rotation, the main sputtering magnetic field sweeps the sputtering working surface to achieve uniform sputtering of the target material.

8. The planar magnetron sputtering apparatus according to claim 1, characterized in that, The rotating magnetic circuit assembly includes: A rotating chassis, wherein the rotating chassis is connected to the drive shaft of the first motor; A magnetic backplate and a permanent magnet assembly, wherein the magnetic backplate is disposed below the rotating chassis and is used to gather the magnetic lines of force on the back of the permanent magnet assembly to enhance the strength of the main sputtering magnetic field, and the permanent magnet assembly is disposed below the magnetic backplate.

9. A planar magnetron sputtering device according to claim 8, wherein The rotating magnetic circuit assembly also includes: A protective cover is disposed below the permanent magnet assembly, and the peripheral portion of the protective cover extends upward along the side wall of the permanent magnet assembly to accommodate the permanent magnet assembly.

10. A planar magnetron sputtering device according to claim 4, wherein It also includes a mounting plate; The mounting plate has a first through hole for the main body to pass through, and a second through hole for the output shaft of the second motor to pass through; Furthermore, a first threaded hole array is provided around the first through hole, and a second threaded hole array is provided around the second through hole.

Images