Magnetron sputtering device and sputtering cathode thereof
Patent Information
- Application Number
- CN202522040599.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-23
- Publication Date
- 2026-08-18
- Estimated Expiration
- 2035-09-23
AI Technical Summary
[0004]基于此，有必要针对上述高深宽比的孔洞或凹槽的侧壁镀膜沉积速率低的问题，提供一种磁控溅射装置及其溅射阴极
[0019] The magnetron sputtering apparatus and sputtering cathode of this application, by adding a second magnetic field perpendicular to the target surface on the basis of a first magnetic field, under the combined action of the first and second magnetic fields, causes the plasma region on the target surface to extend toward the substrate, thereby changing the incident angle distribution of sputtered particles toward the substrate, so as to improve the sputtering deposition on the sidewalls of deep holes or grooves.
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Abstract
Description
Technical Field
[0001] This application relates to the field of magnetron sputtering technology, and in particular to magnetron sputtering apparatus and sputtering cathode. Background Technology
[0002] With the continuous development of microelectronic devices, MEMS structures, and advanced optical components, device surfaces often exhibit three-dimensional morphological structures with high aspect ratios, such as deep holes, trenches, and microchannels. Achieving uniform and dense thin film deposition within these structures is a crucial step in ensuring device performance and reliability.
[0003] Magnetron sputtering, as the most widely used physical vapor deposition (PVD) method, has advantages such as high deposition rate, good film purity, and wide applicability to a wide range of materials. However, during the deposition process, sputtered atoms and ions mainly follow the principle of linear propagation (line-of-sight transmission). This results in a significantly lower deposition rate in the sidewall region than in the opening region inside high aspect ratio holes or grooves, easily leading to non-uniform coating problems such as "top accumulation and insufficient bottom and sidewall deposition". Utility Model Content
[0004] Therefore, it is necessary to provide a magnetron sputtering device and its sputtering cathode to address the problem of low deposition rate of sidewall coatings in holes or grooves with high aspect ratios.
[0005] To address the aforementioned technical problems, this application provides a sputtering cathode, which includes:
[0006] Target material, having a target material surface;
[0007] The first magnetic field generating device is used to form a first magnetic field parallel to the surface of the target material.
[0008] The second magnetic field generating device is used to form a second magnetic field perpendicular to the surface of the target material.
[0009] In this process, the combined action of the first and second magnetic fields causes the plasma region on the target surface to extend toward the substrate, thereby changing the incident angle distribution of sputtered particles toward the substrate and improving sputtering deposition on the sidewalls of deep holes or grooves.
[0010] In some embodiments, the second magnetic field generating device is an electromagnetic coil assembly.
[0011] In some embodiments, the sputtering cathode further includes a flange plate, a main frame, and a water-cooled plate. The main frame has an annular cross-section, and the water-cooled plate and the target material are stacked. The flange plate and the water-cooled plate are respectively located at the lower opening and the upper opening of the main frame. The electromagnetic coil assembly is located within the space enclosed by the main frame, the flange plate, and the water-cooled plate.
[0012] In some embodiments, the electromagnetic coil assembly is arranged around the inner ring of the main frame, and includes a coil frame and a coil, with the coil mounted on the coil frame.
[0013] In some embodiments, the main frame includes an upper frame and a lower frame detachably connected to the upper frame. The free ends of the upper frame and the lower frame are provided with limiting portions extending horizontally. The coil bobbin includes a vertically arranged bobbin body and bobbin flanges extending horizontally from both ends of the bobbin body. The bobbin flanges abut against the limiting portions and form a space for accommodating the coil.
[0014] In some embodiments, the coil frame further includes a water-cooling channel fitted to the inner side of the frame body.
[0015] In some embodiments, the limiting portion of the lower frame extends toward the center and is integrally connected to form a support plate.
[0016] In some embodiments, the first magnetic field generating device includes a plurality of permanent magnets and a back plate for supporting the permanent magnets, and the first magnetic field generating device partially overlaps with the coil in the height direction.
[0017] In some embodiments, multiple guide shafts with a back plate and a water-cooling plate through them are fixed on the support plate for installation guidance.
[0018] To address the aforementioned technical problems, this application also provides a magnetron sputtering apparatus, which includes a vacuum chamber and a sputtering cathode as described above, with the sputtering cathode disposed within the vacuum chamber.
[0019] The magnetron sputtering apparatus and sputtering cathode of this application, by adding a second magnetic field perpendicular to the target surface on the basis of a first magnetic field, under the combined action of the first and second magnetic fields, causes the plasma region on the target surface to extend toward the substrate, thereby changing the incident angle distribution of sputtered particles toward the substrate, so as to improve the sputtering deposition on the sidewalls of deep holes or grooves. Attached Figure Description
[0020] Figure 1 This is a schematic diagram illustrating the structural principle of a magnetron sputtering device in the prior art.
[0021] Figure 2 This is a schematic diagram illustrating the structural principle of the magnetron sputtering device of this application;
[0022] Figure 3 A three-dimensional structural schematic diagram of a sputtering cathode provided in an embodiment of this application;
[0023] Figure 4 for Figure 3 A three-dimensional structural schematic diagram of the sputtering cathode from another perspective;
[0024] Figure 5 for Figure 3 A schematic diagram of the cross-sectional structure of the sputtering cathode is shown.
[0025] Figure 6 for Figure 5 A magnified schematic diagram of the sputtering cathode A section shown;
[0026] Figure 7 for Figure 3 A three-dimensional structural diagram of the coil frame of the sputtering cathode is shown.
[0027] Figure 8 for Figure 3 The diagram shows a three-dimensional structural schematic of the main frame of the sputtering cathode. Detailed Implementation
[0028] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.
[0029] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0030] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0031] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0032] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0033] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.
[0034] The horizontal magnetic field mentioned in this application is relative to the target surface, and most of the magnetic field lines are distributed parallel to the target surface. The vertical magnetic field is relative to the target surface, and most of the magnetic field lines are distributed perpendicular to the target surface. Please refer to... Figure 1 , Figure 1This is a schematic diagram of the structural principle of a magnetron sputtering device in the prior art. In the prior art, multiple permanent magnets 2 are placed behind the target material 1. The multiple permanent magnets 2 can form a horizontal magnetic field on the surface of the target material 1, and a plasma region 3 is generated around the horizontal magnetic field. A large number of electrons accumulate here. When argon ions collide with the target material 1, sputtering particles (mainly composed of target atoms 5 and target ions 6) are generated. After the target atoms 5 leave the surface of the target material 1, they collide with electrons when passing through the plasma region 3. They have a probability of becoming target ions 6. The target atoms 5 that do not become target ions 6 are deposited on the surface or sidewall of the substrate 4 in a linear motion (only a small portion can be deposited on the sidewall). The target ions 6 are accelerated under the action of the electric field and deposited on the surface of the substrate 4 in a direction almost perpendicular to the surface of the substrate 4. This method is more effective for planar substrates 4, but if the substrate 4 has deep holes or deep grooves, the deposition efficiency is very low.
[0035] For further details, please refer to... Figure 2 , Figure 2 This is a schematic diagram of the structural principle of the magnetron sputtering device of this application. Compared with the prior art, the difference is that an electromagnetic coil 7 is set below the permanent magnet 2. The electromagnetic coil 7 can generate a vertical magnetic field. Under the combined action of the horizontal and vertical magnetic fields, the plasma region 3 on the surface of the target material 1 extends towards the substrate 4. At this time, when the sputtering particles pass through the head of the plasma region, they will ionize to generate target ions 6. The incident angle α of the target ions 6 towards the deep hole is close to vertical (normal direction). Under the action of the electric field, they can be directed and efficiently shot into the depth of the sidewall of the deep hole, thereby improving the sputtering deposition on the sidewall of the deep hole or groove.
[0036] Please refer to the reference. Figures 3-6 , Figure 3 A three-dimensional structural schematic diagram of a sputtering cathode provided in an embodiment of this application; Figure 4 for Figure 3 The diagram shows a cross-sectional structure of the sputtering cathode. Figure 5 for Figure 3 The diagram shows a cross-sectional structure of the sputtering cathode. Figure 6 for Figure 5The diagram shows an enlarged view of the sputtering cathode A portion. In this embodiment, the sputtering cathode includes a target 11, a first magnetic field generating device 12, a second magnetic field generating device 13, a flange plate 14, a main frame 15, and a water-cooled plate 16. The target 11 is preferably a rectangular target 11 with a target 11 surface. The first magnetic field generating device 12 is preferably a permanent magnet 121, used to form a first magnetic field parallel to the target 11 surface. The second magnetic field generating device 13 is preferably an electromagnetic coil assembly, used to form a second magnetic field perpendicular to the target 11 surface. Of course, in other embodiments, other magnetic field generating devices such as magnets can also be used, but the electromagnetic coil assembly offers better adjustment convenience. Under the combined action of the first and second magnetic fields, the plasma region on the target 11 surface extends towards the substrate, thereby changing the incident angle distribution of sputtered particles towards the substrate, thus improving sputtering deposition on the sidewalls of deep holes or grooves. The water-cooled plate 16 and the target material 11 are stacked, the flange plate 14 and the water-cooled plate 16 are respectively located at the lower opening and the upper opening of the main frame 15, and the electromagnetic coil assembly is located in the space enclosed by the main frame 15, the flange plate 14 and the water-cooled plate 16.
[0037] Furthermore, please refer to the following: Figure 8 , Figure 8 for Figure 3 The diagram shows a three-dimensional structural schematic of the main frame of the sputtering cathode. In this embodiment, the main frame 15 includes an upper frame 151 and a lower frame 152 detachably connected to the upper frame 151. Both the free ends of the upper frame 151 and the lower frame 152 extend horizontally and are provided with limiting portions 153. The limiting portions 153 of the lower frame 152 extend towards the center and are integrated to form a support plate 154. Both the upper frame 151 and the lower frame 152 are made of insulating material, and a sealing ring (not shown) is provided between the upper frame 151 and the lower frame 152 to increase sealing. The main frame 15 is manufactured in separate parts, which helps reduce processing costs and improves assembly and disassembly efficiency. To protect the main frame 15, a protective plate 19 is also provided around the outer perimeter of the main frame 15.
[0038] Please refer to the reference. Figure 7 , Figure 7 for Figure 3The diagram shows a three-dimensional structural schematic of the coil frame for the sputtering cathode. The electromagnetic coil assembly is arranged around the inner ring of the main frame 15, and includes a coil frame 17 and a coil (not shown). The coil is mounted on the coil frame 17. Specifically, the coil frame 17 includes a vertically arranged frame body 171 and frame flanges 172 extending horizontally from both ends of the frame body 171. The frame flanges 172 abut against the limiting portion 153 and form a space for accommodating the coil. The coil winds around the coil frame 17 from top to bottom or from bottom to top. According to Ampere's right-hand rule, the direction of the magnetic field generated by the coil is a vertical magnetic field. The magnitude of the vertical magnetic field can be adjusted by those skilled in the art according to actual conditions.
[0039] Furthermore, the coil generates a large amount of heat after being energized. In order to dissipate heat from the coil, the coil frame 17 also includes a water-cooling channel 173 that is fitted inside the frame body 171. By introducing water or other liquids, the coil can be quickly cooled.
[0040] It should also be noted that the first magnetic field generating device 12 includes multiple permanent magnets 121 and a back plate 122 for supporting the permanent magnets 121. The first magnetic field generating device 12 partially overlaps with the coil in the height direction. This method of placing both the first magnetic field generating device 12 and the second magnetic field generating device 13 within the main frame 15 requires less modification to the sputtering cathode and is more convenient for adjustment compared to placing the second magnetic field generating device 13 outside the main frame 15.
[0041] In some embodiments, a number of guide shafts 18, which pass through the back plate 122 and the water-cooling plate 16, are fixed on the support plate 154 for mounting guidance.
[0042] In some embodiments, the sputtering cathode further includes an adjustment device 20 for adjusting the magnitude of the magnetic field strength of the first magnetic field. The adjustment device 20 has a plurality of spaced-apart devices, one end of which is fixed to the side of the flange plate 14 away from the first magnetic field generating device 12, and the other end is connected to the back plate 122.
[0043] This application also discloses a magnetron sputtering apparatus, which includes a vacuum chamber and a sputtering cathode as described in the previous embodiment, wherein the sputtering cathode is disposed in the vacuum chamber.
[0044] The magnetron sputtering apparatus and sputtering cathode of this application, by adding a second magnetic field perpendicular to the target surface on the basis of a first magnetic field, under the combined action of the first and second magnetic fields, causes the plasma region on the target surface to extend toward the substrate, thereby changing the incident angle distribution of sputtered particles toward the substrate, so as to improve the sputtering deposition on the sidewalls of deep holes or grooves.
[0045] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0046] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.
Claims
1. A sputtering cathode, characterized in that, The sputtering cathode includes: Target material, having a target material surface; A first magnetic field generating device is used to form a first magnetic field parallel to the surface of the target material on the target material surface; The second magnetic field generating device is used to form a second magnetic field perpendicular to the surface of the target material. Under the combined action of the first magnetic field and the second magnetic field, the plasma region on the surface of the target material extends toward the substrate, thereby changing the incident angle distribution of sputtered particles toward the substrate to improve sputtering deposition on the sidewalls of deep holes or grooves.
2. The sputtering cathode according to claim 1, characterized in that, The second magnetic field generating device is an electromagnetic coil assembly.
3. The sputtering cathode according to claim 2, characterized in that, The sputtering cathode also includes a flange plate, a main frame, and a water-cooled plate. The main frame has an annular cross-section. The water-cooled plate and the target material are stacked. The flange plate and the water-cooled plate are respectively located at the lower opening and the upper opening of the main frame. The electromagnetic coil assembly is located within the space enclosed by the main frame, the flange plate, and the water-cooled plate.
4. The sputtering cathode according to claim 3, characterized in that, The electromagnetic coil assembly is arranged around the inner ring of the main frame, and includes a coil frame and a coil, with the coil mounted on the coil frame.
5. The sputtering cathode according to claim 4, characterized in that, The main frame includes an upper frame and a lower frame detachably connected to the upper frame. The free ends of the upper frame and the lower frame are provided with limiting parts extending horizontally. The coil skeleton includes a vertically arranged skeleton body and skeleton flanges extending horizontally from both ends of the skeleton body. The skeleton flanges abut against the limiting parts and form a space for accommodating the coil.
6. The sputtering cathode according to claim 5, characterized in that, The coil frame also includes a water-cooling channel fitted inside the frame body.
7. The sputtering cathode according to claim 5, characterized in that, The limiting part of the lower frame extends towards the center and connects to form a support plate.
8. The sputtering cathode according to claim 7, characterized in that, The first magnetic field generating device includes a plurality of permanent magnets and a back plate for supporting the permanent magnets. The first magnetic field generating device partially overlaps with the coil in the height direction.
9. The sputtering cathode according to claim 8, characterized in that, The support plate is fixed with multiple guide shafts that pass through the back plate and the water-cooling plate for installation and guidance.
10. A magnetron sputtering apparatus, characterized in that, The magnetron sputtering apparatus includes a vacuum chamber and a cathode sputtering as described in any one of claims 1-9, wherein the sputtering cathode is disposed within the vacuum chamber.