Press assembly and physical vapor deposition apparatus
Patent Information
- Application Number
- CN202521875110.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-01
- Publication Date
- 2026-08-18
- Estimated Expiration
- 2035-09-01
AI Technical Summary
这样会直接导致晶圆取片环节中机械手臂抓取失效，导致粘连的晶圆破裂
[0004]本实用新型旨在一定程度上解决相关技术中的技术问题之一。为此，本实用新型提供了一种压料组件及物理气相沉积设备，能够避免晶圆和压环的粘连，减少晶圆的破损风险。
Smart Images
Figure CN224647051U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of deposition equipment technology, specifically to a pressing component and a physical vapor deposition device. Background Technology
[0002] In semiconductor manufacturing processes, physical vapor deposition (PVD) technology is widely used for the preparation of metal thin films on wafer surfaces. Among these methods, magnetron sputtering has become the mainstream approach due to its high efficiency and controllability. Magnetron sputtering uses an electric field and a magnetic field to ionize argon gas to form a plasma. High-energy argon ions bombard a metal target, sputtering the target atoms and depositing them on the wafer surface to form a dense thin film.
[0003] In physical vapor deposition (PVD) equipment, with increasing deposition cycles, the metal deposits can easily adhere to the wafer surface at high temperatures, forming abnormal bonding forces. This can directly cause the robotic arm to fail during wafer unloading, leading to wafer breakage due to the adhesion. Such anomalies not only result in wafer scrap but also trigger equipment safety protection mechanisms, causing unplanned downtime and severely restricting production line uptime and chip yield. Utility Model Content
[0004] This invention aims to address one of the technical problems in related technologies to a certain extent. To this end, this invention provides a pressing assembly and a physical vapor deposition device that can prevent the wafer and pressing ring from sticking together, reducing the risk of wafer breakage.
[0005] To achieve the above objectives, a first aspect of this utility model discloses a pressing assembly, which includes an inner liner and a first pressing ring. The inner liner is disposed within a reaction chamber to isolate the inner wall of the reaction chamber. The first pressing ring is movably disposed on the inner liner in a vertical direction and is used to press against the top surface of the wafer. The pressing assembly further includes a second pressing ring, which is disposed on the bottom side of the first pressing ring. The second pressing ring is movably disposed on the inner liner in a vertical direction and is opposite to the first pressing ring. The second pressing ring is disposed between the first pressing ring and the wafer. The second pressing ring can move downward relative to the first pressing ring under its own weight and cause the wafer and the first pressing ring to separate.
[0006] In this technical solution, during deposition, the second pressure ring is placed between the first pressure ring and the wafer. After deposition, the second pressure ring can exert a downward force on the wafer through its own gravity, so that the wafer can be smoothly separated from the first pressure ring, avoiding damage to the wafer caused by adhesion during the deposition process. Using the gravity of the second pressure ring as the separation force is less prone to failure than a spring structure, making the separation effect more stable.
[0007] Furthermore, the inner liner includes a support body, an annular first limiting ring, and an annular second limiting ring. The first and second limiting rings protrude from the top surface of the support body. The first limiting ring is disposed outside the second limiting ring and spaced apart from it. The top surface of the first limiting ring is higher than that of the second limiting ring. The top surface of the first limiting ring is vertically opposite to the first pressure ring and is used to limit the lowest position of the first pressure ring. The top surface of the second limiting ring is vertically opposite to the second pressure ring and is used to limit the lowest position of the second pressure ring.
[0008] Furthermore, the top surface of the first limiting ring is at least 2 mm higher than the second limiting ring.
[0009] Furthermore, the second pressure ring includes a second guide ring and a second pressure plate. The second guide ring is arranged around the second pressure plate and is sleeved on the outside of the second limiting ring. The second pressure plate is opposite to the second limiting ring and is arranged in the sputtering channel, and has a central hole that communicates with the sputtering channel. The second pressure plate is used to press on the top surface of the wafer to be deposited so that the wafer is separated from the first pressure ring by the gravity of the second pressure ring.
[0010] Furthermore, the bottom end of the second pressure plate is provided with multiple protrusions, which are circumferentially distributed around the axis of the second pressure ring. The protrusions are used to press against the top surface of the wafer.
[0011] Furthermore, the first pressure ring includes a first guide ring and a first pressure plate. The first guide ring is slidably connected to the inner bushing in the vertical direction. The first pressure plate is disposed in the sputtering channel and is used to press against the top surface of the wafer. A central hole is formed on the first pressure plate.
[0012] Furthermore, the first pressure ring includes a first convex ring and a second convex ring disposed on the bottom surface of the first pressure ring. The first convex ring and the second convex ring protrude from the bottom surface of the first pressure plate. The first convex ring is disposed inside the second convex ring. The first convex ring is opposite to the wafer and is used to press against the top surface of the wafer. The second convex ring is opposite to the second pressure ring and is used to abut against the second pressure ring during the deposition process. The first convex ring is disposed at the edge of the central hole of the first pressure ring, and the bottom end of the first convex ring is located inside the second pressure ring.
[0013] Furthermore, the first and second pressure rings are made of ceramic.
[0014] The second aspect of this utility model discloses a physical vapor deposition apparatus, including a reaction chamber, a support component and a target material disposed in the reaction chamber, wherein the support component and the target material are disposed opposite each other in the vertical direction. The physical vapor deposition apparatus also includes a pressing component as described in the first aspect, wherein the pressing component is disposed between the support component and the target material, and the support component is provided with a receiving portion for placing a wafer, wherein the receiving portion is opposite to the first pressing ring and the second pressing ring in the vertical direction.
[0015] Furthermore, the support assembly is disposed on the bottom side of the target material. The support assembly includes a lifting mechanism, a heating plate, and a deposition ring. The lifting mechanism is used to drive the heating plate to rise and fall. The deposition ring is disposed on the top surface of the heating plate and is disposed opposite to the second pressure ring. The receiving portion is disposed on the inner side of the deposition ring.
[0016] Furthermore, in the vertical direction, the heating plate can switch between the deposition position and the initial position;
[0017] In the initial position, the heating plate is spaced apart from the second pressure ring;
[0018] At the deposition location, the deposition ring lifts up the first pressure ring and the second pressure ring, with the first pressure ring pressing against the top surface of the wafer.
[0019] The reasoning process for the beneficial effects of the physical vapor deposition equipment provided by this utility model is similar to that of the aforementioned pressing component, and will not be repeated here.
[0020] These features and advantages of this utility model will be disclosed in detail in the following specific embodiments and accompanying drawings. The preferred embodiments or means of this utility model will be shown in detail in conjunction with the accompanying drawings, but this is not intended to limit the technical solution of this utility model. In addition, each of these features, elements and components appearing in the following text and drawings is multiple and is labeled with different symbols or numbers for convenience, but all represent parts with the same or similar structure or function. Attached Figure Description
[0021] The present invention will be further described below with reference to the accompanying drawings:
[0022] Figure 1 This is a schematic diagram showing the bearing component and pressing component of this utility model in their initial positions;
[0023] Figure 2 This is a schematic diagram showing the bearing component and pressing component of this utility model in the deposition position;
[0024] Figure 3 This utility model Figure 2 Enlarged view of a portion of the image;
[0025] Figure 4 This is a schematic diagram showing the separation state of the wafer and the first pressure ring driven by the second pressure ring of this utility model;
[0026] Figure 5 This is a cross-sectional schematic diagram of the inner liner of this utility model;
[0027] Figure 6 This is a cross-sectional schematic diagram of the first pressure ring of this utility model;
[0028] Figure 7 This is a cross-sectional schematic diagram of the second pressure ring of this utility model.
[0029] in,
[0030] 10. Pressing assembly; 11. Inner liner; 111. Support body; 112. First limiting ring; 113. Second limiting ring; 12. First pressing ring; 121. First guide ring; 122. First pressing plate; 123. First convex ring; 124. Second convex ring; 13. Second pressing ring; 131. Second guide ring; 132. Second pressing plate; 20. Reaction chamber; 30. Bearing assembly; 31. Heating plate; 32. Deposition ring; 40. Wafer; 50. Target material. Detailed Implementation
[0031] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described are intended to explain this utility model and should not be construed as limiting it.
[0032] The terms "an embodiment," "example," or "trademark" used in this specification refer to a particular feature, structure, or characteristic described in connection with the embodiment itself that may be included in at least one embodiment disclosed in this utility model. The phrase "in an embodiment" appearing in various places throughout the specification does not necessarily refer to the same embodiment.
[0033] In physical vapor deposition (PVD), a clamping ring is typically used to hold the wafer in place to prevent it from shaking. During deposition, the metal deposits on the clamping ring can easily adhere to the wafer surface at high temperatures. Therefore, a structure is usually needed to separate the wafer from the clamping ring. In related technologies, an elastic component is usually placed on the clamping ring, and the elastic force of the component drives the separation between the wafer and the clamping ring. However, since the clamping ring is exposed to high temperatures for a long time, the elastic component is prone to failure and loss of elasticity, thus failing to achieve a good separation effect.
[0034] In view of this, see Appendix Figure 1 , Figures 5 to 7The first aspect of this utility model discloses a pressing assembly 10, which includes an inner liner 11 and a first pressing ring 12. The inner liner 11 is disposed in a reaction chamber 20 to isolate the inner wall of the reaction chamber 20. The first pressing ring 12 is movably disposed on the inner liner 11 in a vertical direction and is used to press against the top surface of a wafer 40. The pressing assembly 10 also includes a second pressing ring 13, which is movably disposed on the inner liner 11 in a vertical direction. The second pressing ring 13 is disposed on the bottom side of the first pressing ring 12 and is opposite to the first pressing ring 12. The second pressing ring 13 is used to separate the mutually adhered first pressing ring 12 and wafer 40 by its own gravity.
[0035] In this embodiment, the clamping assembly 10 is generally installed in a physical vapor deposition equipment. The clamping assembly 10 is installed between the target 50 and the wafer 40 to be deposited. The target 50 deposits on the wafer 40 through the sputtering channel.
[0036] In this embodiment, the inner liner 11 is installed inside the reaction chamber 20 of the physical vapor deposition equipment. It is generally made of stainless steel. Sputtering channels are formed on the inner liner 11 so that the deposition process takes place within the range of the sputtering channels. In this embodiment, the inner liner 11 is configured as a cover structure. On the one hand, the inner liner 11 can prevent sputtered material from reaching other parts of the reaction chamber 20. On the other hand, the inner liner 11 can serve as the mounting base for the first pressure ring 12 and the second pressure ring 13.
[0037] In this embodiment, both the first pressure ring 12 and the second pressure ring 13 are slidably disposed on the inner bushing 11 in a vertical direction, wherein the second pressure ring 13 is disposed on the bottom side of the first pressure ring 12, as shown in the attached figure. Figure 1 , 2 As shown in Figure 4, the target 50, the first pressure ring 12, the second pressure ring 13 and the wafer 40 are arranged in sequence from high to low along the vertical direction. In this way, during the deposition process, the sputtered material passes through the first pressure ring 12 and the second pressure ring 13 from the target 50 along the vertical direction and reaches the surface of the wafer 40.
[0038] During the deposition process, in order to ensure the stability of the wafer 40, the first pressure ring 12 needs to be pressed against the top surface of the wafer 40. The corresponding second pressure ring 13 will be located between the first pressure ring 12 and the wafer 40. In this embodiment, the first pressure ring 12 and the second pressure ring 13 are generally coaxially arranged. While the first pressure ring 12 is pressed against the top surface of the wafer 40, the second pressure ring 13 and the top surface of the wafer 40 will also have a certain contact area (to facilitate the application of a downward force to the wafer 40 when the wafer 40 separates from the first pressure ring 12). That is, the second pressure ring 13 can also play a role in fixing the wafer 40. However, in order to avoid the second pressure ring 13 from sticking to the sputtered material, a protective structure (the first convex ring 123 mentioned later in this application) can generally be set on the first pressure ring 12 to isolate the second pressure ring 13, so that the second pressure ring 13 is not easy to come into contact with the sputtered material, thereby avoiding the second pressure ring 13 from sticking to the first pressure ring 12, and ensuring the stability of the separation effect of the second pressure ring 13.
[0039] In this embodiment, both the first pressure ring 12 and the second pressure ring 13 are set as annular structures. The purpose of this design is to cooperate with the wafer 40 in the circumferential direction when they are used together, thereby improving the stability of fixing the wafer 40 (achieved by the first pressure ring 12) and applying downward pressure to the wafer 40 and separating it from the first pressure ring 12 (achieved by the second pressure ring 13).
[0040] Of course, it is conceivable that in actual setup, the second pressure ring 13 does not necessarily have to be set as a ring structure. It can also be set as other structures, such as multiple pressure plate structures distributed in the circumferential direction, as long as it can apply force to the wafer 40 uniformly in the circumferential direction.
[0041] In this embodiment, the first retaining ring 12 and the second retaining ring 13 can be made of ceramic materials, such as high-purity aluminum nitride ceramic. Compared with traditional retaining rings made of stainless steel, the first retaining ring 12 and the second retaining ring 13 made of ceramic materials in this application have a coefficient of thermal expansion that is highly matched with the silicon wafer 40, are resistant to high temperatures, have small deformation, and prevent thermal deformation that could cause wafer 40 to warp. Experimental verification shows that when the process temperature reaches 400℃, the deformation of the first retaining ring 12 and the second retaining ring 13 is only 2% of that of the traditional stainless steel structure (i.e., the thermal deformation rate is reduced by 98%). This characteristic is particularly suitable for high-temperature processes such as aluminum metal thick film deposition, effectively avoiding thin film cracking problems and improving the yield of advanced processes.
[0042] Since the adhesion phenomenon mainly exists between the first pressure ring 12 and the wafer 40, in order to enhance the anti-adhesion of the first pressure ring 12, the surface of the first pressure ring 12 can be treated by sandblasting + aluminum spraying composite treatment.
[0043] In this embodiment, the pressing assembly 10 consists of three core components: a first pressing ring 12, a second pressing ring 13, and an inner sleeve 11. Specifically, the deposition ring 32 is precisely assembled and fixed to the top plane of the heating plate 31. The wafer 40 is precisely placed on the surface of the deposition ring 32 after being transferred by a robotic arm. After the robotic arm completes the wafer 40 transfer, the heating plate 31 initiates a vertical lifting motion from its initial position. At this time, the force points of the first pressing ring 12 and the second pressing ring 13 gradually transition from the inner sleeve 11 to the deposition ring 32 as the height changes. Initially, the first pressing ring 12 and the second pressing ring 13 are supported by the inner sleeve 11. When the heating plate 31 moves upward, the deposition ring 32 and the wafer 40 will lift the first pressing ring 12 and the second pressing ring 13, causing them to detach from the support of the inner sleeve 11 and instead be supported by the wafer 40 and the deposition ring 32. (See attached diagram). Figure 2 , 3 At this time, the first pressure ring 12 can press against the top surface of the wafer 40 under its own gravity. During the deposition process, the second pressure ring 13 is mainly stressed on the deposition ring 32.
[0044] After deposition is complete, the heating plate 31 descends from the deposition position back to its initial position. During this descent, because the first pressure ring 12 is positioned on top of the second pressure ring 13, when the heating plate 31 is below the initial height of the first pressure ring 12, the first pressure ring 12 will first detach from the wafer 40 and be supported by the inner bushing 11. The continued descent of the heating plate 31 will cause the wafer 40 and the first pressure ring 12 to separate first. Since there may be adhesion between the first pressure ring 12 and the wafer 40, due to the design of the second pressure ring 13, it will continue to descend a short distance with the wafer 40. In this way, the second pressure ring 13 can overcome the adhesion force between the wafer 40 and the first pressure ring 12 using its own gravity, allowing the wafer 40 to descend smoothly. (See Appendix) Figure 4 ;
[0045] As the heating plate 31 continues to descend below the initial position of the second pressure ring 13 in the inner sleeve 11, the second pressure ring 13 reaches its initial position, is supported by the inner sleeve 11, and detaches from the wafer 40. Since there is no adhesion between the second pressure ring 13 and the wafer 40, they can easily separate. The wafer 40 continues to descend until it reaches its initial position, as shown in the attached diagram. Figure 1 As shown.
[0046] As can be seen, this application introduces a gravity-driven separation system (second pressure ring 13): when the deposition ring 32 descends, the lower pressure ring generates vertical gravity on the wafer 40 due to its mass distribution characteristics, and achieves non-destructive separation of the wafer 40 through the torque balance principle, thereby improving the production quality of the wafer 40.
[0047] Compared to the elastic structures in related technologies, the gravity of the second pressure ring 13 in this embodiment will not fail due to changes in the external environment, resulting in a more stable separation effect. This avoids the force attenuation problem caused by metal fatigue, and can extend the equipment maintenance cycle several times over.
[0048] In addition, the first pressure ring 12 of this application is designed to make full contact with the surface of the wafer 40, which increases the threshold voltage of tip discharge and makes it less likely to generate tip discharge phenomenon. Compared with the traditional local contact scheme, the arc occurrence rate is reduced by 90%.
[0049] As one embodiment of this utility model, see the appendix. Figure 5 The inner sleeve 11 includes a support body 111, an annular first limiting ring 112, and an annular second limiting ring 113. The first limiting ring 112 and the second limiting ring 113 protrude from the top surface of the support body 111. The first limiting ring 112 is disposed outside the second limiting ring 113 and spaced apart from the second limiting ring 113. The top surface of the first limiting ring 112 is higher than the second limiting ring 113. The top surface of the first limiting ring 112 is vertically opposite to the first pressure ring 12 and is used to limit the lowest position of the first pressure ring 12. The top surface of the second limiting ring 113 is vertically opposite to the second pressure ring 13 and is used to limit the lowest position of the second pressure ring 13.
[0050] In this embodiment, the inner liner 11 is provided with a support platform (first limiting ring 112 and second limiting ring 113) for supporting the first pressure ring 12 and the second pressure ring 13. The support platform is used to support and limit the lowest position of the first pressure ring 12 and the second pressure ring 13. In the initial state, the first pressure ring 12 and the second pressure ring 13 are supported on the corresponding limiting rings under their own weight.
[0051] In this embodiment, the top surface of the first limiting ring 112 is higher than the second limiting ring 113, so that the initial positions of the first pressing ring 12 and the second pressing ring 13 have a certain gap, providing a certain travel space for the second pressing ring 13 to separate the wafer 40 and the first pressing ring 12 by gravity, so that the second pressing ring 13 has enough space to drive the wafer 40 and the first pressing ring 12 to separate.
[0052] In this embodiment, the first limiting ring 112 and the second limiting ring 113 are arranged inside and outside, and the support for the first pressure ring 12 and the second pressure ring 13 is reasonably arranged to avoid interference of the first limiting ring 112 with the vertical movement of the second pressure ring 13.
[0053] In this embodiment, the first limiting ring 112 and the second limiting ring 113 are in a ring structure, which can provide support for both the first pressure ring 12 and the second pressure ring 13 in the circumferential direction, thereby improving the stability of the first pressure ring 12 and the second pressure ring 13 on the inner bushing 11.
[0054] As one embodiment of this utility model, see the appendix. Figure 3 , 5 The top surface of the first limiting ring 112 is at least 2 mm higher than the second limiting ring 113. This provides sufficient space for the second pressure ring 13 to separate the wafer 40 from the first pressure ring 12.
[0055] As one embodiment of this utility model, see the appendix. Figure 7 The second pressure ring 13 includes a second guide ring 131 and a second pressure plate 132. The second guide ring 131 is arranged around the second pressure plate 132 and is sleeved on the outside of the second limiting ring 113. The second pressure plate 132 is opposite to the second limiting ring 113. The second pressure plate 132 is arranged in the sputtering channel and has a central hole that communicates with the sputtering channel. The second pressure plate 132 is used to press on the top surface of the wafer 40 to be deposited so as to separate the wafer 40 from the first pressure ring 12 by the gravity of the second pressure ring 13.
[0056] In this embodiment, the second limiting ring 113 not only limits the vertical height of the second pressure ring 13, but also cooperates with the second guide portion to limit the radial position of the second pressure ring 13, and guides the vertical movement of the second pressure ring 13, making the vertical movement of the second pressure ring 13 more stable.
[0057] As one embodiment of the present invention, the bottom end of the second pressure plate 132 is provided with a plurality of protrusions (not shown in the figure), the plurality of protrusions being circumferentially distributed around the axis of the second pressure ring 13, the protrusions being used to press against the top surface of the wafer 40.
[0058] In this embodiment, the second pressure ring 13 and the wafer 40 are abutted by multiple protrusions, which can reduce the stress on the wafer 40.
[0059] As one embodiment of this utility model, see the appendix. Figure 6 The first pressure ring 12 includes a first guide ring 121 and a first pressure plate 122. The first guide ring 121 is slidably connected to the inner bushing 11 in the vertical direction. The first pressure plate 122 is disposed in the sputtering channel and is used to press on the top surface of the wafer 40. A central hole is formed on the first pressure plate 122.
[0060] Similar to the cooperation structure of the second pressure ring 13 and the second limiting platform mentioned above, the first limiting platform in this embodiment can also limit the radial movement of the first pressure ring 12 and guide the sliding of the first pressure ring 12 in the height direction.
[0061] As one embodiment of this utility model, see the appendix. Figure 3 , 6 The first pressure ring 12 includes a first protruding ring 123 and a second protruding ring 124 disposed on the bottom surface of the first pressure ring 12. The first protruding ring 123 and the second protruding ring 124 protrude from the bottom surface of the first pressure plate 122. The first protruding ring 123 is disposed inside the second protruding ring 124. The first protruding ring 123 is opposite to the wafer 40 and is used to press against the top surface of the wafer 40. The second protruding ring 124 is opposite to the second pressure ring 13 and is used to abut against the second pressure ring 13 during the deposition process. The bottom surface of the first protruding ring 123 is lower than the bottom surface of the second protruding ring 124.
[0062] In this embodiment, the first protruding ring 123 is used to press against the top surface of the wafer 40, and the second protruding ring 124 is used to abut against the second pressing ring 13 when the supporting component 30 rises. As can be seen from the figure, the bottom surface of the first protruding ring 123 is lower than the bottom surface of the second protruding ring 124. Thus, when the first protruding ring 123 presses against the surface of the wafer 40, there is a gap between the bottom surface of the second protruding ring 124 and the wafer 40. This gap is used to accommodate the second pressing ring 13, so that the first protruding ring 123 can avoid being blocked by the second pressing ring 13 and thus not be able to press against the surface of the wafer 40.
[0063] In this invention, the inner diameter of the first pressure ring 12 is smaller than the inner diameter of the second pressure ring 13. Specifically, the first convex ring 123 is disposed inside the second pressure ring 13. (See attached drawing.) Figure 3 As shown, the first convex ring 123 can directly press the wafer 40 on one hand, and isolate the second pressing ring 13 from the sputtered material on the other hand.
[0064] The second aspect of this utility model discloses a physical vapor deposition apparatus, see appendix. Figure 1 , 2 4. The device includes a reaction chamber 20, a support assembly 30 and a target 50 disposed within the reaction chamber 20. The support assembly 30 and the target 50 are vertically opposite each other and located on the bottom side of the target 50. The physical vapor deposition apparatus also includes a first aspect of a pressing assembly 10, which is disposed between the support assembly 30 and the target 50. The support assembly 30 is provided with a receiving portion for placing a wafer 40. The receiving portion is vertically opposite to the first pressing ring 12 and the second pressing ring 13. Along the vertical direction, the support assembly 30 can switch between a deposition position and an initial position.
[0065] In the initial position, the bearing component 30 is spaced apart from the second pressure ring 13;
[0066] At the deposition location, the support assembly 30 lifts up the first pressure ring 12 and the second pressure ring 13, with the first pressure ring 12 pressing against the top surface of the wafer 40.
[0067] The specific working principle of the physical vapor deposition equipment in this embodiment has been mentioned above. The key point of this application is the cooperation and combination of the first pressure ring 12, the second pressure ring 13 and the inner liner 11. During the deposition process, the supporting parts of the first pressure ring 12 and the second pressure ring 13 can switch between the support component 30 and the inner liner 11 as the support component 30 is raised and lowered. Thus, the second pressure ring 13 can be separated from the wafer 40 and the first pressure ring 12 by gravity.
[0068] In one embodiment of the present invention, the support component 30 is disposed on the bottom side of the target material 50. The support component 30 includes a lifting mechanism, a heating plate 31 and a deposition ring 32. The lifting mechanism is used to drive the heating plate 31 to rise and fall. The deposition ring 32 is disposed on the top surface of the heating plate 31 and is disposed opposite to the second pressure ring 13. The receiving part is disposed on the inner side of the deposition ring 32.
[0069] In this embodiment, the cross-sectional structure of the deposition ring 32 can be configured as shown in the attached figure. Figure 3 The Z-shaped structure shown has its bottom end installed on the outer edge of the heating plate 31, which can form a physical isolation barrier to effectively block plasma from sputtering contamination to the edge area of the heating plate 31. The top end of the Z-shaped deposition ring 32 maintains a precise distance of 0.5mm from the inner surface of the heating plate 31. During the cooling stage after the wafer 40 is deposited, the argon cooling gas flow can be evenly diffused along this gap to the back of the wafer 40, so as to achieve uniform cooling of the wafer 40.
[0070] Furthermore, during the upward movement of the support component 30, the top surface of the deposition ring 32 abuts against the bottom surface of the second pressure ring 13 to lift the second pressure ring 13. The deposition ring 32 is the main force-bearing component for lifting the second pressure ring 13, which can reduce the damage to the wafer 40 that may be caused by lifting the second pressure ring 13 through the wafer 40.
[0071] The above are merely specific embodiments of this utility model, but the scope of protection of this utility model is not limited thereto. Those skilled in the art should understand that this utility model includes, but is not limited to, the contents described in the accompanying drawings and the specific embodiments above. Any modifications that do not depart from the functional and structural principles of this utility model will be included within the scope of the claims.
Claims
1. A pressing assembly, the pressing assembly (10) comprising an inner liner (11) and a first pressing ring (12), the inner liner (11) being disposed within a reaction chamber (20) to isolate the inner wall of the reaction chamber (20), the first pressing ring (12) being movably disposed on the inner liner (11) in a vertical direction, the first pressing ring (12) being used to press against the top surface of a wafer (40), characterized in that, The pressing assembly (10) further includes a second pressing ring (13), which is disposed on the bottom side of the first pressing ring (12). The second pressing ring (13) is movably disposed in the inner bushing (11) in the vertical direction and is opposite to the first pressing ring (12). The second pressing ring (13) is used to be disposed between the first pressing ring (12) and the wafer (40). The second pressing ring (13) can move downward relative to the first pressing ring (12) under its own gravity and drive the wafer (40) and the first pressing ring (12) to separate.
2. The pinch assembly of claim 1, wherein, The inner liner (11) includes a support body (111), a first limiting ring (112), and an annular second limiting ring (113). The first limiting ring (112) and the second limiting ring (113) protrude from the top surface of the support body (111). The first limiting ring (112) is disposed outside the second limiting ring (113) and spaced apart from the second limiting ring (113). The top surface of the first limiting ring (112) is higher than the second limiting ring (113). The top surface of the first limiting ring (112) is vertically opposite to the first pressure ring (12) and is used to limit the lowest position of the first pressure ring (12). The top surface of the second limiting ring (113) is vertically opposite to the second pressure ring (13) and is used to limit the lowest position of the second pressure ring (13).
3. The pinch assembly of claim 2, wherein, The top surface of the first limiting ring (112) is at least 2 mm higher than the second limiting ring (113).
4. The pinch assembly of claim 2, wherein, The second pressure ring (13) includes a second guide ring (131) and a second pressure plate (132). The second guide ring (131) is arranged around the second pressure plate (132). The second guide ring (131) is sleeved on the outside of the second limiting ring (113). The second pressure plate (132) is opposite to the second limiting ring (113). The second pressure plate (132) is used to press on the top surface of the wafer (40) to be deposited, so that the wafer (40) is separated from the first pressure ring (12) by the gravity of the second pressure ring (13).
5. The pressing assembly according to claim 4, characterized in that, The bottom end of the second pressure plate (132) is provided with a plurality of protrusions, which are circumferentially distributed around the axis of the second pressure ring (13) and are used to press against the top surface of the wafer (40).
6. The pressing assembly according to any one of claims 1 to 5, characterized in that, The first pressure ring (12) includes a first guide ring (121) and a first pressure plate (122). The first guide ring (121) is slidably connected to the inner bushing (11) in the vertical direction. The first pressure plate (122) is used to press on the top surface of the wafer (40).
7. The pressing assembly according to claim 6, characterized in that, The first pressure ring (12) includes a first protruding ring (123) and a second protruding ring (124) disposed on the bottom surface of the first pressure plate (122). The first protruding ring (123) and the second protruding ring (124) protrude from the bottom surface of the first pressure plate (122). The first protruding ring (123) is disposed inside the second protruding ring (124). The first protruding ring (123) is opposite to the wafer (40) and is used to press against the top surface of the wafer (40). The second protruding ring (124) is opposite to the second pressure ring (13) and is used to abut against the second pressure ring (13) during the deposition process. The bottom surface of the first protruding ring (123) is lower than the bottom surface of the second protruding ring (124).
8. The pressing assembly according to any one of claims 1 to 5, characterized in that, The first pressure ring (12) and the second pressure ring (13) are made of ceramic.
9. A physical vapor deposition apparatus, comprising a reaction chamber (20), and a support assembly (30) and a target (50) disposed within the reaction chamber (20), wherein the support assembly (30) and the target (50) are opposite each other in a vertical direction, characterized in that, The physical vapor deposition apparatus further includes a clamping assembly (10) as described in any one of claims 1 to 8, the clamping assembly (10) being disposed between a support assembly (30) and a target (50), the support assembly (30) being provided with a receiving portion for placing a wafer (40), the receiving portion being vertically opposite to the first clamping ring (12) and the second clamping ring (13), and the support assembly (30) being able to switch between a deposition position and an initial position along the vertical direction; In the initial position, the bearing component (30) is spaced apart from the second pressure ring (13); At the deposition location, the support assembly (30) lifts up the first pressure ring (12) and the second pressure ring (13), with the first pressure ring (12) pressing against the top surface of the wafer (40).
10. The physical vapor deposition apparatus according to claim 9, characterized in that, The supporting component (30) includes a lifting mechanism, a heating plate (31) and a deposition ring (32). The lifting mechanism is used to drive the heating plate (31) to rise and fall. The deposition ring (32) is disposed on the top surface of the heating plate (31) and is disposed opposite to the second pressure ring (13). The receiving part is disposed on the inner side of the deposition ring (32).