Lower electrode assembly and semiconductor etching apparatus

Abstract

The utility model provides a kind of lower electrode assembly and semiconductor etching equipment, belong to semiconductor production equipment technical field, lower electrode assembly includes: lower electrode main body;Flow guide ring, the flow guide ring is around the axis of the lower electrode main body is arranged, multiple flow guide plates are detachably arranged along the circumferential direction of the flow guide ring, and the flow guide plate is provided with flow guide hole.The utility model can be adjusted by flow guide ring to the flow direction of vacuum degree pressure, gas, and then change the distribution of plasma, ensure the uniformity of distribution, when coping with different processing requirements, such as adjusting the vacuum degree, gas pressure, flow guide plate can be replaced according to the needs, to adjust the purpose of flow guide hole, to cope with different processing requirements in this way.The lower electrode assembly of the embodiment can effectively optimize the distribution of plasma on the wafer surface, which helps to improve the processing performance of the equipment.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor manufacturing equipment technology, specifically relating to a lower electrode assembly and semiconductor etching equipment. Background Technology

[0002] As semiconductor integration density advances to nodes below 3nm, traditional planar packaging technologies can no longer meet the demands for improved chip performance and functional density. Advanced packaging technologies, such as 3D stacked packaging and fan-out WLP, have become the core path to overcome the physical limits of Moore's Law. In advanced packaging processes, etching technology is responsible for the high-precision shaping of chip interconnect structures (such as TSVs and RDLs), and its process stability directly affects the electrical performance, heat dissipation capabilities, and long-term reliability of the packaged chip.

[0003] As the core component of plasma etching equipment, the design of the lower electrode inside the etching chamber is crucial in determining etching uniformity, plasma density, and process repeatability. The lower electrode must simultaneously achieve the following functions: (1) Radio frequency power coupling: high-density plasma is excited and maintained by radio frequency power supply; (2) Wafer temperature control: Precisely regulate the surface temperature of the wafer (temperature control accuracy must be ≤ ±1℃) to avoid wafer warping or etching rate fluctuations caused by thermal stress; (3) Plasma uniformity adjustment: Optimize the distribution of plasma on the wafer surface through electrode surface structure (such as focusing ring, gas distribution hole); (4) Corrosion resistance and durability: It maintains stable surface morphology for a long time in plasma environment containing corrosive gases such as fluorine / chlorine, reducing the risk of particulate contamination.

[0004] In existing technologies, the lower electrode cannot effectively optimize the distribution of plasma on the wafer surface, which limits the processing performance of the equipment. Utility Model Content

[0005] The present invention aims to at least solve one of the aforementioned technical problems existing in the prior art. To this end, in a first aspect, the present invention provides a lower electrode capable of solving the problem of plasma distribution optimization.

[0006] Secondly, this utility model provides a semiconductor etching apparatus that uses the aforementioned lower electrode.

[0007] The lower electrode assembly according to a first aspect embodiment of the present invention includes: Lower electrode body; A flow guide ring is provided, which is arranged around the axis of the lower electrode body. The flow guide ring is detachably provided with multiple flow guide plates along the circumferential direction, and the flow guide plates are provided with flow guide holes.

[0008] The lower electrode assembly according to this embodiment of the present invention has at least the following beneficial effects: The lower electrode assembly of this embodiment can adjust the vacuum pressure and gas flow direction through the guide ring, thereby changing the plasma distribution and ensuring uniformity. When dealing with different processing requirements, such as adjusting the vacuum degree and gas pressure, the guide plate can be replaced as needed to adjust the guide holes, thus meeting different processing requirements. Therefore, the lower electrode assembly of this embodiment can effectively optimize the plasma distribution on the wafer surface, helping to improve the processing performance of the equipment.

[0009] According to some embodiments of the present invention, the lower electrode assembly further includes a deposition ring, which is coaxially distributed with the flow guide ring. The deposition ring is supported on the upper end face of the flow guide ring and extends into the inner region surrounded by the flow guide ring. The upper end face of the flow guide ring is provided with a first annular rib, and the lower end face of the deposition ring is provided with a first annular groove. The first annular rib is inserted into the first annular groove to restrict the horizontal movement of the deposition ring relative to the flow guide ring. When the lower electrode body supports the substrate and lifts the deposition ring upward, the first annular rib is always located in the first annular groove.

[0010] According to some embodiments of this utility model, the guide plate is distributed on the outer periphery of the deposition ring along the horizontal direction.

[0011] According to some embodiments of the present invention, a second annular rib is provided on the lower end face of the flow guide ring, and the lower electrode body can move upward to the area surrounded by the second annular rib. When the lower electrode body enters the area surrounded by the second annular rib, the second annular rib always abuts against the lower electrode body.

[0012] According to some embodiments of this utility model, the lower electrode body includes: A water-cooled electrode, the upper end face of which is used to support the substrate; An insulating layer is provided, which covers the bottom and outer periphery of the water-cooled electrode. A first insulating layer and a second insulating layer are provided on the outer periphery of the water-cooled electrode. The first insulating layer and the second insulating layer are stacked one on top of the other, and the bonding surface of the first insulating layer and the second insulating layer is a non-planar structure.

[0013] According to some embodiments of the present invention, the lower electrode body further includes a shielding layer, which covers the bottom and outer periphery of the insulating layer.

[0014] According to some embodiments of the present invention, the lower electrode assembly further includes a deposition ring, which is supported on the upper end face of the guide ring and extends into the inner region surrounded by the guide ring; In this configuration, the insulating layer is located within the inner region of the ring along the vertical direction; and the vertical projection of the first insulating layer at least partially overlaps with that of the deposition ring, the shielding layer at least partially overlaps with that of the guide ring, and the first insulating layer and the deposition ring are provided with a third annular rib and a second annular groove aligned vertically.

[0015] According to some embodiments of this utility model, a cooling channel is provided on the upper end face of the water-cooled electrode, and the cooling channel is connected to a cooling air path.

[0016] According to some embodiments of this utility model, the cooling electrode has a built-in cooling water channel, which is connected to a cooling water circuit.

[0017] The semiconductor etching apparatus according to a second aspect of the present invention includes the lower electrode assembly of any of the above embodiments.

[0018] The semiconductor etching apparatus according to the present invention has at least the following beneficial effects: by applying the above-mentioned lower electrode assembly, the semiconductor etching apparatus of the present invention can effectively optimize the distribution of plasma on the wafer surface, which helps to improve the processing performance of the apparatus.

[0019] Additional aspects and advantages of this invention will be set forth in part in the description which follows, and some of these additional aspects and advantages will become apparent from the description or may be learned by practice of the invention. Attached Figure Description

[0020] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein: Figure 1 This is a schematic diagram of an overall structure of the lower electrode assembly in this utility model; Figure 2 This is a schematic diagram of one arrangement of the flow guide ring and flow guide plate of the lower electrode assembly in this utility model; Figure 3 This is a structural cross-sectional view of the lower electrode assembly in this utility model; Figure 4 This is a schematic diagram showing one arrangement of the first insulating layer, the second insulating layer, and the deposition ring in the lower electrode assembly of this utility model. Figure 5 This is a schematic diagram of the flow guide ring and deposition ring of the lower electrode assembly in this utility model; Figure 6 This is a schematic diagram of the structure of a water-cooled electrode in the lower electrode assembly of this utility model. Detailed Implementation

[0021] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.

[0022] In the description of this utility model, it should be understood that the directional descriptions, such as up, down, front, back, left, right, etc., indicate the directional or positional relationship based on the directional or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0023] In the description of this utility model, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0024] In the description of this utility model, unless otherwise explicitly defined, terms such as "setting," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this utility model in conjunction with the specific content of the technical solution.

[0025] In the description of this utility model, the terms "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this utility model. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0026] As semiconductor integration density advances to nodes below 3nm, traditional planar packaging technologies can no longer meet the demands for improved chip performance and functional density. Advanced packaging technologies, such as 3D stacked packaging and fan-out WLP, have become the core path to overcome the physical limits of Moore's Law. In advanced packaging processes, etching technology is responsible for the high-precision shaping of chip interconnect structures (such as TSVs and RDLs), and its process stability directly affects the electrical performance, heat dissipation capabilities, and long-term reliability of the packaged chip.

[0027] As the core component of plasma etching equipment, the design of the lower electrode inside the etching chamber is crucial in determining etching uniformity, plasma density, and process repeatability. The lower electrode must simultaneously achieve the following functions: (1) Radio frequency power coupling: high-density plasma is excited and maintained by radio frequency power supply; (2) Wafer temperature control: Precisely regulate the surface temperature of the wafer (temperature control accuracy must be ≤ ±1℃) to avoid wafer warping or etching rate fluctuations caused by thermal stress; (3) Plasma uniformity adjustment: Optimize the distribution of plasma on the wafer surface through electrode surface structure (such as focusing ring, gas distribution hole); (4) Corrosion resistance and durability: It maintains stable surface morphology for a long time in plasma environment containing corrosive gases such as fluorine / chlorine, reducing the risk of particulate contamination.

[0028] In existing technologies, the lower electrode cannot effectively optimize the distribution of plasma on the wafer surface, which limits the processing performance of the equipment.

[0029] Reference Figures 1 to 6 This invention provides a lower electrode assembly that addresses the problem of plasma distribution optimization. Specifically, it includes a lower electrode body 100 and a flow guide ring 200, both coaxially distributed. The outer circumferential dimension of the flow guide ring 200 is larger than that of the lower electrode body 100, allowing it to engage with the flow guide ring 200 during the lifting and lowering of the lower electrode body 100. The flow guide ring 200 is detachably equipped with multiple flow guide plates 201 along its circumference, each with flow guide holes. In practical applications, multiple specifications of flow guide plates 201 can be configured, with different sizes or shapes of flow guide holes on each plate. By replacing different specifications of flow guide plates 201, the flow guide ring 200's effectiveness in guiding vacuum suction and gas flow can be altered.

[0030] It is understood that the lower electrode assembly in this embodiment can adjust the vacuum pressure and gas flow direction through the guide ring 200, thereby changing the plasma distribution and ensuring its uniformity. When dealing with different processing requirements, such as adjusting the vacuum level and gas pressure, the guide plate 201 can be replaced as needed to adjust the flow guide holes, thus meeting different processing requirements. Therefore, the lower electrode assembly in this embodiment can effectively optimize the plasma distribution on the wafer surface, helping to improve the processing performance of the equipment.

[0031] Reference Figures 3 to 5 In some embodiments of this invention, the lower electrode assembly further includes a deposition ring 300, which is coaxially distributed with the flow guiding ring 200. The deposition ring 300 is supported on the upper end face of the flow guiding ring 200 and extends into the inner region surrounded by the flow guiding ring 200. The upper end face of the flow guiding ring 200 is provided with a first annular rib 2001, which is coaxially distributed with the flow guiding ring 200. Correspondingly, the lower end face of the deposition ring 300 is provided with a first annular groove 3001, which is coaxially distributed with the deposition ring 300. The first annular rib 2001 and the first annular groove 3001 engage with each other to restrict the horizontal movement of the deposition ring 300 relative to the flow guiding ring 200, thereby maintaining the coaxial distribution of the deposition ring 300 and the flow guiding ring 200.

[0032] In this embodiment, the deposition ring 300 is used to press down on the periphery of the substrate supported by the lower electrode assembly. That is, as the lower electrode assembly moves upwards supporting the substrate, it engages with the guide ring 200, simultaneously pressing down on the periphery of the substrate by the deposition ring 300, and causing the deposition ring 300 to be lifted upwards relative to the guide ring 200. In this embodiment, the dimensions of the first annular rib 2001 and the first annular groove 3001 in the vertical direction satisfy the following: when the lower electrode body 100 supports the substrate and lifts the deposition ring 300 upwards, the first annular rib 2001 remains within the first annular groove 3001.

[0033] The structural configuration of this embodiment uses a first annular rib 2001 and a first annular groove 3001 to horizontally limit the deposition ring 300 and the guide ring 200, ensuring that the deposition ring 300 remains interlocked with the guide ring 200 each time it is lifted by the substrate. This ensures that the deposition ring 300 remains coaxially distributed with the guide ring 200 during its descent. Furthermore, because the first annular rib 2001 and the first annular groove 3001 are interlocked—meaning the first annular rib 2001 always contacts the sidewall of the first annular groove 3001—this structural configuration effectively controls the positioning potential difference between the deposition ring 300 and the guide ring 200, thereby helping to ensure uniform plasma distribution.

[0034] Combination Figure 2 As shown, in some embodiments of this utility model, the guide plate 201 is distributed on the outer periphery of the deposition ring 300 along the horizontal direction, so as to avoid the guide hole being blocked by the deposition ring 300, which helps to ensure the guiding effect and efficiency of the guide ring 200 on vacuum and plasma.

[0035] Reference Figure 4 and Figure 5 In some embodiments of this utility model, a second annular rib 2002 is provided on the lower end face of the flow guide ring 200. The second annular rib 2002 is coaxially distributed with the flow guide ring 200, and the inner diameter of the second annular rib 2002 is adapted to the outer peripheral size of the lower electrode body 100, so that the lower electrode body 100 can move upward into the area surrounded by the second annular rib 2002, and when the lower electrode body 100 enters the area surrounded by the second annular rib 2002, the second annular rib 2002 always abuts against the lower electrode body 100.

[0036] With the structural configuration of this embodiment, the guide ring 200 cooperates with the lower electrode body 100 through the second annular rib 2002, which can effectively ensure the positioning accuracy between the two and ensure the positional consistency when the lower electrode body 100 lifts the guide ring 200 each time, thereby ensuring the positional accuracy between the lower electrode body 100 and the guide plate 201 and achieving the preset guiding effect.

[0037] Furthermore, when the lower electrode body 100 lifts the substrate upward for processing, the guide ring 200 always abuts against the lower electrode body 100 through the second annular rib 2002. This can effectively control the potential difference between the electrode body and the guide ring 200 during operation, which helps to ensure that the plasma is uniformly distributed in the space defined by the lower electrode body 100 and the guide ring 200.

[0038] In some embodiments of this utility model, the second annular rib 2002 includes an annular inner wall facing the center of the guide ring 200, and a protrusion is provided at the lower end of the annular inner wall in the direction of the guide ring 200. Since the size of the second annular rib 2002 is adapted to the outer peripheral size of the lower electrode body 100, the lower electrode body 100 can move upward to the inner side of the second annular rib 2002. In this embodiment, by providing a protrusion on the annular inner wall of the second annular rib 2002, the protrusion can abut against the lower electrode body 100 in the circumferential direction, thereby ensuring that the two are always in contact when the lower electrode body 100 enters the area surrounded by the second annular rib 2002.

[0039] Furthermore, the protrusion is located at the lower end of the annular inner wall of the second annular rib 2002, so that the lower electrode body 100 can maintain contact with the guide ring 200 during the first moment when the lower electrode body 100 moves upward into the second annular rib 2002 and throughout the entire process of the lower electrode body 100 entering the second annular rib 2002.

[0040] Reference Figures 3 to 5 In some embodiments of this utility model, the lower electrode body 100 includes a water-cooled electrode 101 and an insulating layer 102. The insulating layer 102 covers the bottom and outer periphery of the water-cooled electrode 101, exposing the upper surface of the water-cooled electrode 101 to support the substrate. In this embodiment, the portion of the insulating layer 102 located on the outer periphery of the water-cooled electrode 101 is provided with a first insulating layer 1021 and a second insulating layer 1022, with the first insulating layer 1021 on top and the second insulating layer 1022 on the bottom, stacked together. The bonding surface between the first insulating layer 1021 and the second insulating layer 1022 is a non-planar structure, such as a stepped surface stacking, or a curved surface or an inclined surface stacking. It is sufficient that the bonding surface of the first insulating layer 1021 and the second insulating layer 1022 has a height variation along the radial direction of the lower electrode body 100.

[0041] By employing the structural configuration of this embodiment, the insulation of the water-cooled electrode 101 is effectively ensured by wrapping it with the insulating layer 102. Since insulating materials are generally ceramic or quartz, which are difficult to process, this embodiment divides the portion located on the outer periphery of the water-cooled electrode 101 into a first insulating layer 1021 and a second insulating layer 1022, effectively reducing processing difficulty. Furthermore, by designing the fit between the first insulating layer 1021 and the second insulating layer 1022, breakdown can be effectively prevented, facilitating smooth process handling.

[0042] Reference Figure 5 Furthermore, in some embodiments of this utility model, a first positioning step 10211 is provided on the lower end face of the first insulating layer 1021 on the side away from the center of the lower electrode body 100, and the first positioning step 10211 is generally in the form of a ring structure. A second positioning step 10221 is provided on the upper end face of the second insulating layer 1022 on the side close to the center of the lower electrode body 100, and the second positioning step 10221 is generally in the form of a ring structure. The first positioning step 10211 and the second positioning step 10221 are staggered in the horizontal direction. The first insulating layer 1021 and the second insulating layer 1022 are positioned and stacked together by the first positioning step 10211 and the second positioning step 10221, so that the two are in a stepped surface fit.

[0043] With the structural configuration of this embodiment, the first insulating layer 1021 and the second insulating layer 1022 are positioned by the first positioning step 10211 and the second positioning step 10221, which can realize quick assembly and disassembly and positioning, and at the same time avoid the problem of being punctured at the stacking point. The structure is simple and easy to manufacture.

[0044] Reference Figures 1 to 5 In some embodiments of this utility model, the lower electrode body 100 further includes a shielding layer 103, which covers the bottom and outer periphery of the insulating layer 102. In this embodiment, the shielding layer 103 can shield electromagnetic waves and can ground electrostatic charges when the lower electrode body 100 descends to the bottom of its travel, thus providing protection. Combined with the insulating layer 102 in the aforementioned embodiments, this effectively improves the insulation and shielding protection of the water-cooled electrode 101.

[0045] Combination Figure 4 and Figure 5 As shown, in some embodiments of this utility model, the second insulating layer 1022 simultaneously covers the lower end of the water-cooled electrode 101. A mounting screw is inserted upwards from the bottom of the shielding layer 103, passing through the second insulating layer 1022 and connecting to the water-cooled electrode 101, thereby achieving fixation between the three components. An insulating pad is provided between the mounting screw and the shielding layer 103 and the second insulating layer 1022 to prevent contact between the mounting screw and the shielding layer 103 and the second insulating layer 1022, ensuring insulation. Simultaneously, the end of the mounting screw protruding outside the shielding layer 103 is covered by a shielding cover to ensure shielding effectiveness.

[0046] The insulating pad and shielding cover are interlocked to ensure the installation stability of the shielding cover and the insulation and shielding effect.

[0047] Combination Figure 1 and Figure 2 As shown, in some embodiments of this utility model, a connecting pipe is provided at the bottom of the water-cooled electrode 101, and a sealing gasket is provided at the position where the connecting pipe passes through the second insulating layer 1022. The upper end of the sealing gasket abuts against the water-cooled electrode 101 and the lower end abuts against the shielding layer 103, thereby ensuring sealing.

[0048] In some embodiments of this invention, the lower electrode assembly further includes a deposition ring 300, which is supported on the upper end face of the current guiding ring 200 and extends into the inner region surrounded by the current guiding ring 200. Vertically, the insulating layer 102 is located within the inner region of the ring. Furthermore, the first insulating layer 1021 at least partially overlaps with the vertical projection of the deposition ring 300, and the shielding layer 103 at least partially overlaps with the vertical projection of the current guiding ring 200, such that as the lower electrode body 100 supports the substrate and moves upward, the insulating layer 102 is close to the lower end of the deposition ring 300, while the shielding layer 103 abuts against the current guiding ring 200.

[0049] Furthermore, a third annular rib 10212 is provided at the upper end of the first insulating layer 1021, and a second annular groove 3002 is provided in the area at the lower end of the deposition ring 300 opposite to the first insulating layer 1021. During the upward movement of the lower electrode body 100, the third annular rib 10212 enters the second annular groove 3002.

[0050] In this embodiment, the third annular rib 10212 cooperates with the second annular groove 3002 to ensure the positional accuracy of the deposition ring 300 during the process of being lifted and separated from the guide ring 200. Since the positions of the first insulating layer 1021 and the shielding layer 103 are fixed, and the shielding layer 103 and the guide ring 200 are also positioned by the second annular rib 2002, the positional accuracy of the deposition ring 300 when it falls back onto the guide ring 200 can be effectively ensured, thus achieving automatic positioning.

[0051] Reference Figure 6 In some embodiments of this utility model, a cooling channel 1011 is provided on the upper end surface of the water-cooled electrode 101, and the cooling channel 1011 is connected to the cooling gas path. Since the upper end of the water-cooled electrode 101 supports the substrate, this embodiment, by providing the cooling channel 1011, can define a complete circuit that contacts the substrate when the substrate is placed in, and cool gas is delivered through the cooling gas path to cool the substrate.

[0052] Understandably, the cooling air passage can simply pass through the connecting pipe.

[0053] In some embodiments of this utility model, the water-cooled electrode 101 has a built-in cooling water channel, which is connected to a cooling water path for cooling water to be introduced for cooling.

[0054] In conjunction with the settings of the aforementioned embodiments, the water-cooled electrode 101 in this embodiment, through its water-cooling design, can ensure overall temperature uniformity while also serving the functions of substrate cooling and RF power delivery, resulting in high integration.

[0055] Reference Figures 1 to 6In some embodiments of this utility model, the lower electrode assembly includes a lower electrode body 100, a flow guiding ring 200, and a deposition ring 300. Both the flow guiding ring 200 and the deposition ring 300 are annular structures, and the lower electrode body 100, flow guiding ring 200, and deposition ring 300 are coaxially distributed. The upper end face of the flow guiding ring 200 has multiple mounting windows arranged circumferentially. Each mounting window includes a recess 203 recessed into the upper end face of the flow guiding ring 200 and an opening 202 extending downwards from the bottom of the recess 203. The size of the recess 203 is larger than the size of the opening 202. A flow guiding plate 201 is detachably mounted within the mounting windows of the flow guiding ring 200. The size of the flow guiding plate 201 matches the size of the recess 203 and is partially embedded within it. Simultaneously, a flow guiding hole is provided in the area where the flow guiding plate 201 and the opening 202 are directly opposite each other. The flow guiding plate 201 and the flow guiding ring 200 are fixed together with screws to achieve a detachable connection. Furthermore, the guide ring 200 is equipped with guide plates 201 of multiple specifications. Different sizes of guide plates 201 have guide holes of different sizes. During application, the guide plates 201 can be replaced as needed to adjust the guiding effect. A vertical guide ring is provided on the outer periphery of the guide ring 200. The vertical guide ring is integrally formed with the guide ring 200, and its shape matches the inner wall of the cavity in the actual installation application, thereby ensuring smooth and stable vertical movement within the cavity. The deposition ring 300 is placed in the central area of ​​the guide ring 200 and covers the inner area of ​​the guide ring 200. A first annular groove 3001 is provided in the area where the deposition ring 300 and the guide ring 200 are in contact. Opposite to this first annular groove 3001, a first annular rib 2001 is provided in the area where the guide ring 200 and the deposition ring 300 are in contact. The first annular rib 2001 and the first annular groove 3001 interlock to achieve horizontal positioning between the deposition ring 300 and the guide ring 200. Meanwhile, the deposition ring 300 can move upward relative to the guide ring 200 under the action of external force. That is, the first annular rib 2001 and the first annular groove 3001 do not have a vertical limiting effect, and the engagement of the two will not hinder the deposition ring 300 from moving upward relative to the guide ring 200.

[0056] The lower electrode body 100 includes a water-cooled electrode 101, an insulating layer 102, and a shielding layer 103. The insulating layer 102 is divided into a first insulating layer 1021 and a second insulating layer 1022. The second insulating layer 1022 covers the bottom of the water-cooled electrode 101 and extends upwards to cover part of the outer periphery of the water-cooled electrode 101. The first insulating layer 1021 covers the outer periphery of the water-cooled electrode 101 and is stacked on top of the second insulating layer 1022. A first positioning step 10211 is provided on the lower end face of the first insulating layer 1021 on the side away from the center of the lower electrode body 100, and the first positioning step 10211 has an overall annular structure. A second positioning step 10221 is provided on the upper end face of the second insulating layer 1022 on the side closer to the center of the lower electrode body 100, and the second positioning step 10221 has an overall annular structure. The first positioning step 10211 and the second positioning step 10221 are staggered in the horizontal direction. The first insulating layer 1021 and the second insulating layer 1022 are positioned and stacked together by the first positioning step 10211 and the second positioning step 10221, forming a stepped surface fit between them. Both the first insulating layer 1021 and the second insulating layer 1022 are ceramic or quartz structures. A mounting screw is inserted upwards from the bottom of the shielding layer 103, passing through the second insulating layer 1022 and connecting to the water-cooled electrode 101, thus securing the three components together. An insulating pad is provided between the mounting screw and the shielding layer 103 and the second insulating layer 1022 to prevent contact between the mounting screw and these layers, ensuring insulation. Simultaneously, the end of the mounting screw protruding from the shielding layer 103 is covered by a shielding cover to ensure effective shielding. The first insulating layer 1021 coincides with the vertical projection portion of the deposition ring 300, and the shielding layer 103 coincides with the vertical projection portion of the current guiding ring 200. This ensures that as the lower electrode body 100 moves upward supporting the substrate, the insulating layer 102 is close to the lower end of the deposition ring 300, while the shielding layer 103 abuts against the current guiding ring 200. A third annular rib 10212 is provided at the upper end of the first insulating layer 1021, and a second annular groove 3002 is provided in the area of ​​the lower end of the deposition ring 300 opposite to the first insulating layer 1021. As the lower electrode body 100 moves upward, the third annular rib 10212 enters the second annular groove 3002.

[0057] With the structural configuration of this embodiment, the lower electrode body 100, the guide ring 200, and the deposition ring 300 can ensure positional accuracy during each lifting and docking. Simultaneously, the combination of the first insulating layer 1021, the second insulating layer 1022, and the shielding layer 103 effectively controls the overall point potential difference, which is beneficial for ensuring the uniformity of plasma distribution. Dividing the portion located on the outer periphery of the water-cooled electrode 101 into the first insulating layer 1021 and the second insulating layer 1022 effectively reduces processing difficulty. Furthermore, by designing the bonding shape between the first insulating layer 1021 and the second insulating layer 1022, breakdown can be effectively prevented, ensuring smooth process execution. Furthermore, during the process of the lower electrode body 100 rising to connect with the current guiding ring 200 and the deposition ring 300, the positioning accuracy between them can be ensured through the corresponding coaxial design and concave-convex matching design. When the lower electrode body 100 descends to separate from the deposition ring 300 and the current guiding ring 200, the positioning alignment between the deposition ring 300 and the current guiding ring 200 can also be ensured through the corresponding coaxial design and concave-convex matching design. The structural design is simple and reliable. During the etching process, it can effectively ensure the uniformity of plasma distribution in the space above the substrate. After etching, it can effectively ensure the contact between the deposition ring 300 and the current guiding ring 200, thereby achieving grounding and eliminating electrostatic charge.

[0058] The present invention also provides a semiconductor etching apparatus, including the lower electrode assembly of any of the above embodiments.

[0059] It is understood that the semiconductor etching equipment of this embodiment, by applying the aforementioned lower electrode assembly, can effectively optimize the distribution of plasma on the wafer surface, which helps to improve the processing performance of the equipment.

[0060] In some embodiments of this invention, the semiconductor etching apparatus includes an etching cavity. The lower electrode body 100 is vertically and flexibly disposed within the etching cavity, allowing for the placement and removal of substrates when it moves downwards. A guide ring 200 is disposed within the etching cavity and above the lower electrode body 100, and the guide ring 200 has an adjustable vertical travel range. During operation, the lower electrode body 100 moves upwards, lifting the guide ring 200 to move within its adjustable range. The lower electrode body 100 and the guide ring 200 together divide the etching cavity into upper and lower sections.

[0061] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of the present invention. Furthermore, the embodiments of the present invention and the features thereof can be combined with each other unless otherwise specified.

Claims

1. A lower electrode assembly, characterized by, include: Lower electrode body; A flow guide ring is provided, which is arranged around the axis of the lower electrode body. The flow guide ring is detachably provided with multiple flow guide plates along the circumferential direction, and the flow guide plates are provided with flow guide holes.

2. The lower electrode assembly of claim 1, wherein, The lower electrode assembly further includes a deposition ring, which is coaxially distributed with the flow guide ring. The deposition ring is supported on the upper end face of the flow guide ring and extends into the inner region surrounded by the flow guide ring. The upper end face of the flow guide ring is provided with a first annular rib, and the lower end face of the deposition ring is provided with a first annular groove. The first annular rib is inserted into the first annular groove to restrict the horizontal movement of the deposition ring relative to the flow guide ring. When the lower electrode body supports the substrate and lifts the deposition ring upward, the first annular rib is always located in the first annular groove.

3. The lower electrode assembly of claim 2, wherein, Along the horizontal direction, the guide plates are distributed on the outer periphery of the deposition ring.

4. The lower electrode assembly of claim 1, wherein, The lower end face of the flow guide ring is provided with a second annular rib. The lower electrode body can move upward into the area surrounded by the second annular rib. When the lower electrode body enters the area surrounded by the second annular rib, the second annular rib always abuts against the lower electrode body.

5. The lower electrode assembly of claim 1, wherein, The lower electrode body includes: A water-cooled electrode, the upper end face of which is used to support the substrate; An insulating layer is provided, which covers the bottom and outer periphery of the water-cooled electrode. A first insulating layer and a second insulating layer are provided on the outer periphery of the water-cooled electrode. The first insulating layer and the second insulating layer are stacked one on top of the other, and the bonding surface of the first insulating layer and the second insulating layer is a non-planar structure.

6. The lower electrode assembly of claim 5, wherein, The lower electrode body also includes a shielding layer, which covers the bottom and outer periphery of the insulating layer.

7. The lower electrode assembly of claim 6, wherein, The lower electrode assembly also includes a deposition ring, which is supported on the upper end face of the guide ring and extends into the inner region surrounded by the guide ring; In this configuration, the insulating layer is located within the inner region of the ring along the vertical direction; and the vertical projection of the first insulating layer at least partially overlaps with that of the deposition ring, the shielding layer at least partially overlaps with that of the guide ring, and the first insulating layer and the deposition ring are provided with a third annular rib and a second annular groove aligned vertically.

8. The lower electrode assembly of claim 5, wherein, A cooling channel is provided on the upper end face of the water-cooled electrode, and the cooling channel is connected to a cooling air passage.

9. The lower electrode assembly of claim 5, wherein, The cooling electrode has a built-in cooling water channel, which is connected to the cooling water circuit.

10. A semiconductor etching apparatus, characterized by comprising: Includes the lower electrode assembly as described in any one of claims 1 to 9.

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