High-frequency half-wave vibrator and antenna

Abstract

The application provides a high-frequency half-wave dipole and an antenna. The high-frequency half-wave dipole comprises a dipole surface, a dipole base, a first balun plate, a second balun plate, a first feeding structure, a second feeding structure, a first grounding structure and a second grounding structure; two ends of the first balun plate and the second balun plate are connected with the dipole surface and the dipole base respectively; the first feeding structure is connected with the first balun plate and the dipole base; the second feeding structure is connected with the second balun plate and the dipole base; the first grounding structure is connected with the first balun plate and the dipole base and is located on the side of the first feeding structure in a spaced manner; the second grounding structure is connected with the second balun plate and the dipole base and is located on the side of the second feeding structure in a spaced manner; the first grounding structure and the second grounding structure are used for improving the isolation of the dipole. The high-frequency half-wave dipole can effectively improve the isolation of the dipole, the working frequency band is 4.9-5.9 GHz, and the frequency band is higher than that of a conventional frequency band half-wave dipole.

Description

Technical Field

[0001] This application relates to the field of antenna communication technology, and in particular to a high-frequency half-wave dipole and antenna. Background Technology

[0002] In traditional antenna design, half-wave dipoles are widely used in wireless communication, radar, radio frequency identification, and other fields due to their advantages such as simple structure, symmetrical radiation pattern, and ease of matching. Conventionally designed half-wave dipoles typically operate at frequencies up to 3.8 GHz. However, when the target operating frequency needs to be further increased, existing technologies usually involve proportionally scaling up dipoles from conventional frequencies to design dipoles for higher frequencies. However, dipoles produced using this method often fail to meet the expected performance requirements. This failure primarily stems from significant changes in the physical characteristics, manufacturing precision, and electromagnetic environment of the antenna structure at higher frequencies, leading to a sharp increase in its sensitivity to structural dimensions.

[0003] It is important to note that the techniques described in this section are not necessarily those previously conceived or adopted. Unless otherwise specified, no technique described in this section should be assumed to be prior art simply because it is included in this section. Similarly, unless otherwise specified, the issues mentioned in this section should not be considered to be recognized in any prior art. Utility Model Content

[0004] The first aspect of this application provides a high-frequency half-wave dipole and antenna, which aims to solve the technical problem that dipoles prepared by proportional scaling often fail to meet the expected performance requirements.

[0005] The first aspect of this application provides a high-frequency half-wave oscillator, the high-frequency half-wave oscillator comprising:

[0006] Vibrator surface;

[0007] The oscillator base is disposed on one side of the oscillator surface with a gap in between;

[0008] A first balun plate is disposed between the oscillator surface and the oscillator base, with its two ends respectively connected to the oscillator surface and the oscillator base;

[0009] The second balun plate is disposed between the oscillator surface and the oscillator base, and its two ends are respectively connected to the oscillator surface and the oscillator base. On a cross section parallel to the oscillator surface or the oscillator base, the first balun plate and the second balun plate intersect each other in a cross shape.

[0010] The first power supply structure connects the first balun plate and the oscillator base;

[0011] The second power supply structure connects the second balun plate and the oscillator base;

[0012] A first grounding structure connects the first balun plate and the vibrator base, the first grounding structure being located adjacent to the first feed structure with an opening; and

[0013] The second grounding structure connects the second balun plate and the vibrator base, and the second grounding structure is located on the side of the second power supply structure in an air-to-the-space manner.

[0014] The first grounding structure and the second grounding structure are used to improve the isolation of the oscillator.

[0015] Optionally, the first grounding structure includes a first substructure and a second substructure, the first substructure and the second substructure being located on opposite sides of the first power supply structure.

[0016] Optionally, on a cross section perpendicular to the extension direction of the first feed structure, the shortest distance between the first substructure and the first feed structure is equal to the shortest distance between the second substructure and the first feed structure.

[0017] Optionally, the first grounding structure is implemented using microstrip lines and metallized vias.

[0018] Optionally, the microstrip line includes a top layer of signal traces, an intermediate layer of dielectric substrate, and a bottom layer of continuous ground plane arranged sequentially; the metallized via penetrates the top layer of signal traces, the intermediate layer of dielectric substrate, and the bottom layer of continuous ground plane, or the metallized via penetrates the top layer of signal traces and the intermediate layer of dielectric substrate, and the inner wall of the metallized via is plated with conductive metal.

[0019] Optionally, the number of metallized vias may be multiple.

[0020] Optionally, multiple metallized vias are connected in parallel.

[0021] Optionally, the oscillator surface includes a radiating substrate and a plurality of radiating plates, the plurality of radiating plates being disposed on the side of the radiating substrate away from the oscillator base, and the plurality of radiating plates being arranged circumferentially along the radiating substrate.

[0022] Optionally, the oscillator surface and the oscillator base are parallel.

[0023] Optionally, the first balun plate and the second balun plate are welded to the oscillator surface and the oscillator base, respectively.

[0024] Optionally, the high-frequency half-wave oscillator operates in the frequency band of 4.9–5.9 GHz.

[0025] A second aspect of this application provides an antenna comprising the high-frequency half-wave dipole described in any one of the preceding claims.

[0026] In the high-frequency half-wave oscillator of this application, the isolation of the oscillator can be effectively improved by adding a first grounding structure and a second grounding structure at the first and second feeding structures, respectively. This design can construct a space-surface dual-dimensional decoupling barrier in the high-frequency half-wave oscillator, which not only physically suppresses the core path of near-field coupling, but also provides stable and controllable isolation performance in millimeter-wave size-sensitive scenarios, providing scalable underlying technical support for high-density arrays and high-reliability RF systems. With the above settings, the operating frequency band of the high-frequency half-wave oscillator of this application can reach 4.9 to 5.9 GHz, which is higher than that of conventional half-wave oscillators, while all other indicators are consistent with those of conventional half-wave oscillators.

[0027] It should be understood that the description in this section is not intended to identify key or important features of this application, nor is it intended to limit the scope of this application. Other features of this application will become readily apparent from the following description. Attached Figure Description

[0028] The accompanying drawings exemplify embodiments and form part of the specification, working together with the textual description to explain exemplary implementations of the embodiments. The drawings shown are for illustrative purposes only and do not limit the scope of the claims. Throughout the drawings, the same reference numerals refer to similar but not necessarily identical elements.

[0029] Figure 1 This is a perspective view of an embodiment of the high-frequency half-wave oscillator of this application;

[0030] Figure 2 for Figure 1 Exploded view of the embodiment shown.

[0031] Explanation of reference numerals in the attached figures:

[0032]

[0033] Detailed Implementation

[0034] To make the inventive objectives, features, and advantages of this application more apparent and understandable, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0035] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0036] In the description of the embodiments of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. The term "multiple" means two or more, unless otherwise explicitly specified. The term "comprising" indicates the presence of the described feature, whole, step, operation, element, and / or component, but does not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or sets thereof. The term "and / or" describes the relationship between related objects, indicating that three relationships may exist. For example, A and / or B may include three cases: A existing alone, A and B existing simultaneously, and B existing alone. The character " / " generally indicates that the related objects before and after are in an "or" relationship.

[0037] Unless otherwise defined, all technical terms used in the embodiments of this application have the same meaning as commonly understood by one of ordinary skill in the art; the terms used in the embodiments of this application are for the purpose of describing specific embodiments only and are not intended to limit this application; the terms "comprising" and "having" and any variations thereof in the specification, claims and foregoing description of the drawings of this application are intended to cover non-exclusive inclusion.

[0038] Furthermore, terms such as "exemplary," "for example," and "optional" are used to indicate illustrative purposes. Any technical solution described by the above terms in the embodiments of this application should not be construed as being more preferred or advantageous than other technical solutions. Specifically, these terms are intended to present the relevant technical concepts in terms of specific implementation methods.

[0039] This application discloses a high-frequency half-wave dipole. The high-frequency half-wave dipole includes a dipole surface, a dipole base, a first balun plate, a second balun plate, a first feed structure, a second feed structure, a first grounding structure, and a second grounding structure. The dipole base is disposed on one side of the dipole surface with an opening. The first balun plate is disposed between the dipole surface and the dipole base, with its two ends connected to the dipole surface and the dipole base, respectively. The second balun plate is disposed between the dipole surface and the dipole base, with its two ends connected to the dipole surface and the dipole base, respectively. On a cross section parallel to the dipole surface or the dipole base, the first and second balun plates intersect each other in a cross shape. The first feed structure connects the first balun plate and the dipole base. The second feed structure connects the second balun plate and the dipole base. The first grounding structure connects the first balun plate and the dipole base, and is located beside the first feed structure with an opening. The second grounding structure connects the second balun plate and the dipole base, and is located beside the second feed structure with an opening. The first and second grounding structures are used to improve the isolation of the oscillator.

[0040] In the high-frequency half-wave oscillator of this application, the isolation of the oscillator can be effectively improved by adding a first grounding structure and a second grounding structure at the first feed structure and the second feed structure, respectively. This design can construct a space-surface dual-dimensional decoupling barrier in the high-frequency half-wave oscillator, which not only physically suppresses the core path of near-field coupling, but also provides stable and controllable isolation performance in millimeter-wave size-sensitive scenarios, providing scalable underlying technical support for high-density arrays and high-reliability RF systems.

[0041] The following is a detailed description of the high-frequency half-wave oscillator of this application.

[0042] Please see 1 and Figure 2 This application discloses a high-frequency half-wave dipole 100, which includes a dipole surface 110. The dipole surface 110 includes a radiating substrate 111 and multiple radiating plates 112. The multiple radiating plates 112 are located on the side of the radiating substrate 111 away from the dipole base 120 and are arranged circumferentially along the radiating substrate 111. The radiating substrate 111 is the central hub for high-frequency electromagnetic energy distribution, controlling the energy flow through dielectric properties and a three-dimensional structure. The multiple radiating plates 112 are atomic units for spatial beamforming. Together with the radiating substrate 111, they can achieve: breaking through the physical limits of a single antenna (bandwidth / gain / efficiency), enabling intelligent electromagnetic topology (reconfigurable / adaptive beamforming), and solving the three major bottlenecks of high transmission loss, difficult thermal management, and size sensitivity in millimeter waves, providing core hardware support for 5G / 6G and satellite communications.

[0043] Please see 1 and Figure 2The high-frequency half-wave dipole 100 of this application includes a dipole base 120. The dipole base 120 is disposed on one side of the dipole surface 110. The dipole base 120 plays a key role in the antenna system, integrating structural support, electromagnetic control, and environmental adaptation, and directly affects radiation performance and system reliability, especially in the millimeter-wave high-frequency band design.

[0044] Please see 1 and Figure 2 The vibrator surface 110 and the vibrator base 120 are parallel. Maintaining strict parallelism between the vibrator surface 110 and the vibrator base 120 is a core precision requirement in millimeter-wave antenna design. Its role goes far beyond simple mechanical assembly requirements, directly determining the radiation characteristics of the high-frequency electromagnetic field and the stability of the system.

[0045] Please see 1 and Figure 2 The high-frequency half-wave dipole 100 of this application includes a first balun plate 130 and a second balun plate 140. The first balun plate 130 is disposed between the dipole surface 110 and the dipole base 120, with its two ends connected to the dipole surface 110 and the dipole base 120, respectively. The second balun plate 140 is disposed between the dipole surface 110 and the dipole base 120, with its two ends connected to the dipole surface 110 and the dipole base 120, respectively. The first balun plate 130 and the second balun plate 140 are welded to the dipole surface 110 and the dipole base 120, respectively. This structure provides good connection without affecting the functionality of each component. The first balun plate 130 and the second balun plate 140 are core functional modules in the antenna system for achieving balanced-to-unbalanced conversion, impedance matching, and common-mode suppression, directly impacting radiation efficiency and beam accuracy, especially in millimeter-wave phased array design.

[0046] Please see 1 and Figure 2 On the cross-section of the parallel dipole surface 110 (or dipole base 120), the first balun plate 130 and the second balun plate 140 intersect each other in a cross shape. Specifically, slots can be opened in the middle of the first balun plate 130 and the second balun plate 140 respectively, and the cross-shaped connection of the first balun plate 130 and the second balun plate 140 is achieved by interlocking the two slots. The cross-shaped structure of the first balun plate 130 and the second balun plate 140 is an effective solution for feeding high-performance dual-polarized or circularly polarized antennas, especially widely used in phased array units, and can solve complex problems such as feed point sharing, isolation, balance, impedance matching and grounding caused by three-dimensional spatial intersection.

[0047] Please see 1 and Figure 2The high-frequency half-wave dipole 100 of this application includes a first feed structure 150 and a second feed structure 160. The first feed structure 150 connects the first balun plate 130 and the dipole base 120, and the second feed structure 160 connects the second balun plate 140 and the dipole base 120. The first feed structure 150 and the second feed structure 160 are the energy transmission center and electromagnetic field excitation engine of the antenna, and their design directly determines the antenna's operating bandwidth, efficiency, polarization characteristics, and array beam quality.

[0048] Please see 1 and Figure 2 The high-frequency half-wave oscillator 100 of this application includes a first grounding structure 170 and a second grounding structure 180. The first grounding structure 170 connects the first balun plate 130 and the oscillator base 120, and is located beside the first feed structure 150 with an opening. The second grounding structure 180 connects the second balun plate 140 and the oscillator base 120, and is located beside the second feed structure 160 with an opening. The first grounding structure 170 and the second grounding structure 180 are used to improve the isolation of the oscillator, and can construct a space-surface dual-dimensional decoupling barrier in the high-frequency half-wave oscillator 100. This not only physically suppresses the core path of near-field coupling, but also provides stable and controllable isolation performance in millimeter-wave size-sensitive scenarios, providing scalable underlying technology support for high-density arrays and high-reliability RF systems.

[0049] Please see 1 and Figure 2 The first grounding structure 170 includes a first substructure 171 and a second substructure 172. The first substructure 171 and the second substructure 172 are located on opposite sides of the first feed structure 150. In a cross-section perpendicular to the extension direction of the first feed structure 150, the shortest distance between the first substructure 171 and the first feed structure 150 is equal to the shortest distance between the second substructure 172 and the first feed structure 150. That is, the first substructure 171 and the second substructure 172 are symmetrically distributed on opposite sides of the first feed structure 150. Therefore, the symmetrical distribution of the first grounding structure 170 and the first feed structure 150 can solve unbalanced current, suppress common-mode interference, improve the radiation pattern, enhance impedance matching, and improve stability. The structure and distribution of the second feed structure 160 are similar to those of the first grounding structure 170 and will not be described further.

[0050] The first grounding structure 170 can be implemented using microstrip lines with metallized vias (not shown). Specifically, the microstrip line may include a top layer of signal traces, an intermediate layer of dielectric substrate, and a bottom layer of continuous ground plane arranged sequentially. In the microstrip line, signals can propagate through the electromagnetic field between the top layer of signal traces and the bottom layer of continuous ground plane.

[0051] Metallized vias are formed on microstrip lines. In one embodiment, the metallized via penetrates the signal traces of the top layer, the dielectric substrate of the intermediate layer, and the continuous ground plane of the bottom layer. In another embodiment, the metallized via penetrates the signal traces of the top layer and the dielectric substrate of the intermediate layer. The number of metallized vias can be multiple, depending on the operating frequency and the allowable inductance. Multiple metallized vias can be connected in parallel to further reduce inductance. The aperture of the metallized via can use the minimum reliable aperture allowed by the process. The inner wall of the metallized via is plated with a conductive metal, which can be copper. The thickness of the conductive metal is sufficient to ensure the conductivity and mechanical strength of the metallized via, and is not specifically limited.

[0052] The grounding structure of "microstrip line with metallized vias" utilizes metallized vias to provide a low-inductance, short-path vertical connection channel, efficiently connecting the grounding points of the signal traces on the top layer of the microstrip line to the ideal continuous ground plane of the bottom layer (or the dielectric substrate of the intermediate layer).

[0053] The beneficial effects of using "microstrip lines with metallized vias" to achieve a grounding structure are as follows: (1) Shortening the current path: Metallized vias directly and efficiently connect the signal traces on the top layer of the microstrip line that need to be grounded to the ideal continuous ground plane of the bottom layer (or the dielectric substrate of the intermediate layer), greatly shortening the physical path of high-frequency grounding current; (2) Reducing loop inductance: A shorter path means a smaller parasitic inductance, and multiple metallized vias connected in parallel further reduce the total grounding inductance; (3) Providing a low impedance path: Low inductance means lower impedance at high frequencies, providing a "highway" for high-frequency noise and return current to return to the ground plane, avoiding them from returning through other high impedance paths (causing interference); (4) Stable reference ground: Providing a stable, low-impedance local reference ground potential near the signal line or the grounding pin of the component.

[0054] With the above settings, the operating frequency band of the high-frequency half-wave oscillator 100 of this application can reach 4.9 to 5.9 GHz, which is higher than that of conventional half-wave oscillators, while all other indicators are consistent with those of conventional half-wave oscillators.

[0055] This application also provides an antenna, which includes the aforementioned high-frequency half-wave dipole 100. Since the antenna of this application includes the aforementioned high-frequency half-wave dipole 100, it possesses all the beneficial effects of the aforementioned high-frequency half-wave dipole 100, which will not be elaborated further.

[0056] The above embodiments are only used to illustrate the present application and are not intended to limit it. Although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included within the protection scope of the present application.

Claims

1. A high frequency half-wave dipole, characterized by, The high-frequency half-wave oscillator includes: Vibrator surface; The oscillator base is disposed on one side of the oscillator surface with a gap in between; A first balun plate is disposed between the oscillator surface and the oscillator base, with its two ends respectively connected to the oscillator surface and the oscillator base; The second balun plate is disposed between the oscillator surface and the oscillator base, and its two ends are respectively connected to the oscillator surface and the oscillator base. On a cross section parallel to the oscillator surface or the oscillator base, the first balun plate and the second balun plate intersect each other in a cross shape. The first power supply structure connects the first balun plate and the oscillator base; The second power supply structure connects the second balun plate and the oscillator base; A first grounding structure connects the first balun plate and the vibrator base, the first grounding structure being located adjacent to the first feed structure with an opening; and The second grounding structure connects the second balun plate and the vibrator base, and the second grounding structure is located on the side of the second power supply structure in an air-to-the-space manner. The first grounding structure and the second grounding structure are used to improve the isolation of the oscillator.

2. The high-frequency half-wave resonator according to claim 1, characterized by The first grounding structure includes a first substructure and a second substructure, which are located on opposite sides of the first power supply structure.

3. The high-frequency half-wave oscillator according to claim 2, characterized in that, On a cross section perpendicular to the extension direction of the first feed structure, the shortest distance between the first substructure and the first feed structure is equal to the shortest distance between the second substructure and the first feed structure.

4. The high-frequency half-wave oscillator according to claim 1, characterized in that, The first grounding structure is implemented using microstrip lines and metallized vias.

5. The high-frequency half-wave oscillator according to claim 4, characterized in that, The microstrip line includes a top layer of signal traces, an intermediate layer of dielectric substrate, and a bottom layer of continuous ground plane arranged sequentially; the metallized vias penetrate the top layer of signal traces, the intermediate layer of dielectric substrate, and the bottom layer of continuous ground plane, or the metallized vias penetrate the top layer of signal traces and the intermediate layer of dielectric substrate, and the inner wall of the metallized vias is plated with conductive metal.

6. The high-frequency half-wave oscillator according to claim 5, characterized in that, The number of metallized vias is multiple.

7. The high-frequency half-wave oscillator according to claim 6, characterized in that, Multiple metallized vias are connected in parallel.

8. The high-frequency half-wave oscillator according to claim 1, characterized in that, The oscillator surface includes a radiating substrate and a plurality of radiating plates, the plurality of radiating plates being disposed on the side of the radiating substrate away from the oscillator base, and the plurality of radiating plates being arranged circumferentially along the radiating substrate; The oscillator surface is parallel to the oscillator base; The first balun plate and the second balun plate are respectively welded to the oscillator surface and the oscillator base.

9. The high-frequency half-wave oscillator according to any one of claims 1 to 8, characterized in that, The high-frequency half-wave oscillator operates in the frequency band of 4.9–5.9 GHz.

10. An antenna, characterized in that, The antenna includes the high-frequency half-wave dipole as described in any one of claims 1 to 9.

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