Radio frequency power device and radio frequency power amplifier including the same

Abstract

The utility model provides a kind of radio frequency power device and including its radio frequency power amplifier, the radio frequency power device includes: emitter, the emitter is surrounded by base;Base, the base is configured to surround the emitter, and the base is configured to have opening, to avoid forming closed metal pattern;And collector, collector is configured to be in the upper and lower sides of base.

Description

Technical Field

[0001] This utility model relates to the field of wireless communication, and more specifically, to a high-power, high-gain 5G radio frequency power device and a radio frequency power amplifier including the same. Background Technology

[0002] The highest power level typically used in 5G NR uplink transmit power is PC2, while the highest power level typically used in 4G LTE uplink transmit power is PC3. PC2 is 3dB higher than PC3. Considering the losses between the RF power amplifier and the antenna, including matching networks, filters, duplexers, and multi-port switches, the RF power amplifier in 4G LTE needs to meet a linear power requirement of 29dBm at its maximum transmit power. In the corresponding 5G NR communication link, the 5G RF power amplifier needs to meet a linear power requirement of 32dBm. Furthermore, current 5G NR terminals typically use dual-antenna or multi-antenna designs, which actually requires an additional 1dB of maximum transmit power from the 5G RF power amplifier.

[0003] Due to the high transmit power requirements of 5G NR communication links, the transmit power of 5G RF power amplifiers is twice that of 4G RF power amplifiers, and the operating current is more than twice that of 4G RF power amplifiers. This is because 5G NR systems require higher linearity than 4G, and 5G RF power amplifiers need to consume more current to achieve higher linearity specifications. Therefore, more suitable high-power, high-gain devices are needed to support 5G RF power amplifiers. High power requires larger power units, while high gain requires devices with higher and more stable gain amplification.

[0004] Currently, 5G RF power amplifiers used in conventional mobile phones and other terminals are typically fabricated using gallium arsenide (GaAs) heterojunction transistor (HBT) technology. To meet the high power and high gain requirements of 5G NR systems, a larger emitter size is needed to form larger power units compared to 4G LTE systems. Simultaneously, a larger and more stable DC gain amplification factor (Beta) is also required under high voltage and high current conditions.

[0005] Table 1 shows the performance requirements of RF power amplifier devices for 4G LTE and 5G NR.

[0006] Table 1

[0007] Transmit power level PC3 PC2 Maximum transmit power 29dBm 32dBm Number of power units N 2N Operating current I Approximately 2.5I Overall emitter size A Approximately 2A

[0008] From the perspective of mobile devices and other terminals, the extremely high power consumption in 5G NR systems directly impacts the phone's usage time and user experience. Performance stability and heat generation issues, especially during prolonged high-power uplink operation, are particularly critical.

[0009] Figure 1 This is a top view showing a 5G radio frequency power device formed from gallium arsenide (GaAs) material. (Reference) Figure 1 The power device HBT1 uses a two-finger emitter as an example, where the emitter metal is surrounded by a bifurcate base metal, and the outermost edges are collector metal structures. Those skilled in the art should understand that the above structure can also be used in other CMOS, GeSi, and other processes.

[0010] refer to Figure 1 The structure of 5G gallium arsenide (GaAs) RF power devices features a two-finger emitter, which offers better heat dissipation compared to a single-finger emitter. Furthermore, the bifid base metal structure provides a more uniform Vb voltage, which can appropriately reduce the problem of uneven current distribution in the emitter region. However, this structure also has significant drawbacks, especially when used to fabricate 5G RF power amplifiers.

[0011] When using GaAs to fabricate radio frequency (RF) power devices, especially 5G RF power amplifiers, higher cutoff frequencies are required to achieve higher gain. Therefore, the epitaxially grown base region structure typically needs to be very thin to reduce carrier transit time and thus achieve a higher cutoff frequency. However, a thin base region results in a large base resistance. Due to the different physical locations of the base and emitter regions (e.g., at the emitter edge or inside the emitter region), this parasitic base resistance causes a potential gradient in the emitter region. Figure 2 It shows along Figure 1 A cross-sectional view of the RF power device with tangent Y1 in the cross section. (Reference) Figure 2 A cross-sectional analysis of the HBT device along the Y1 direction was performed. The emitter region is a heavily doped n-type structure, and the base region is a p-type doped structure. The symbol C represents the edge of the emitter region, and the symbol O represents the center of the emitter region. When the voltage applied to the emitter junction exceeds the turn-on voltage, the number of electrons injected into the emitter and the voltage of the emitter junction exhibit an exponential relationship. Due to the lateral parasitic resistance within the thin base region, the base voltage drop gradually decreases from the edge of the emitter region inwards. Thus, more injected electron current is concentrated at the edge of the emitter region, rather than inside the emitter region.

[0012] refer to Figure 2The solid, half-solid, and dashed lines represent the gradient change of the emitter current from the edge to the center. The solid line represents a large current, and the half-solid line and then the dashed line represent a gradual decrease in current. Especially in the high-power operation mode of 5G, the large current at the emitter edge can cause local thermal effects, which in severe cases can lead to transistor performance degradation.

[0013] In addition, as the length of the emitter increases, a certain potential difference will also exist in the thin base metal surrounding it. Figure 3 It shows along Figure 1 A cross-sectional view of the RF power device with tangent X1 in the cross section. (Reference) Figure 3 A cross-sectional analysis was performed on the HBT device along the X1 direction. Due to limitations in photolithography, the base metal cannot form a sealed pattern; that is, there may be instances where a certain edge of the emitter lacks base metal. (Reference) Figure 3 In the diagram marked A and B, as the emitter length increases, the base metal around point A is closer to the electrode Vb, and the emitter junction at point A needs to be switched on at another location (location B) first. Therefore, the emitter current formed at point A is greater than the emitter current formed at point B. For the most severe case, see [link to diagram]. Figure 3 The transistor is located at position Br (outside of position B). There is no base metal at this location, resulting in a very weak emitter current flowing from Br to B. This structure leads to an uneven emitter current distribution, with a large current at point A and a small current at point B. The unilateral large current thermal effect in the emitter region also degrades transistor performance. Utility Model Content

[0014] One aspect of this patent proposes a radio frequency power device applicable to 5G and a power amplifier formed using this power device, providing a solution for high transmit power in 5G modes. The power amplifier device according to the embodiments of this utility model can effectively solve the phenomenon of lateral edge concentration of transmit current; simultaneously, it can also solve the problem of unilateral current concentration in the transmit region.

[0015] One aspect of this patent provides a radio frequency power device, comprising: an emitter surrounded by a base; a base configured to surround the emitter and configured to have an opening to avoid forming a closed metal pattern; and a collector configured on the upper and lower sides of the base.

[0016] One aspect of this patent provides a radio frequency power device, wherein the emitter includes N emitters for forming an N-finger emitter, where N is a natural number.

[0017] One aspect of this patent provides a radio frequency power device, wherein the base is configured to have two openings, which are respectively located at the upper right and lower right of the emitter.

[0018] One aspect of this patent provides a radio frequency power device, wherein the base is configured to have two openings, which are respectively disposed above and below the middle of the emitter.

[0019] One aspect of this patent provides a radio frequency power device, wherein the base is configured to have two openings, the two openings being respectively located above the right of the emitter and below the middle of the emitter.

[0020] One aspect of this patent provides a radio frequency power device, wherein the opening has a minimum linewidth for the process of forming the power device.

[0021] One aspect of this patent provides an RF power device, wherein the base has a body region located on one side of the emitter and is configured to connect a base voltage, and the body region is configured to combine with the body region of another RF power device to form a back-to-back RF power device.

[0022] One aspect of this patent provides a radio frequency power device in which the collector is configured to have the same length as the base.

[0023] One aspect of this patent provides a radio frequency power device, wherein the power device is implemented using one of GaAs process, CMOS process, or SiGe process.

[0024] One aspect of this patent provides an RF power device, comprising: a driver stage amplification unit, a power stage amplification unit, a driver stage bias circuit, a power stage bias circuit, an input matching network, an inter-stage matching network, and an output matching network, wherein the power stage amplification unit comprises the RF power device described above. Attached Figure Description

[0025] Figure 1 This is a top view showing a radio frequency power device for 5G formed from gallium arsenide (GaAs) material;

[0026] Figure 2 It shows along Figure 1 A cross-sectional view of the RF power device with tangent Y1 in the cross section;

[0027] Figure 3 It shows along Figure 1 A cross-sectional view of the RF power device with tangent X1 in the cross section;

[0028] Figure 4 This is a schematic diagram of the structure of the radio frequency power device according to an embodiment of the present utility model;

[0029] Figure 5 This is a schematic diagram showing a radio frequency power amplifier composed of power devices according to an embodiment of the present invention;

[0030] Figure 6 This is a schematic diagram showing a cross-sectional view of a power device according to an embodiment of the present invention;

[0031] Figure 7 This is a schematic diagram showing a cross-sectional view of a power device according to an embodiment of the present invention;

[0032] Figure 8 This is a schematic diagram showing the current and power output of power amplifiers using different power device structures in 4G and 5G.

[0033] Figure 9 This is a schematic diagram showing the gain and power output of power amplifiers using different power device structures in 4G and 5G.

[0034] Figure 10 This is a schematic diagram of the structure of a radio frequency power device according to another embodiment of the present invention; and

[0035] Figure 11 This is a schematic diagram of the structure of a radio frequency power device according to another embodiment of the present invention. Detailed Implementation

[0036] Before proceeding with the detailed description below, it may be advantageous to define certain words and phrases used throughout this patent document. The terms “coupled,” “connected,” and their derivatives refer to any direct or indirect communication between two or more elements, regardless of whether those elements are physically in contact with each other. The terms “transmit,” “receive,” and “communicate,” and their derivatives cover both direct and indirect communication. The terms “comprise,” “include,” and their derivatives refer to, but are not limited to, those including, those including, those including, those including. The term “or” is inclusive, meaning and / or. The phrase “associated with,” and its derivatives refer to, including, being contained within, interconnected, containing, being included in, being connected or connected to, coupled or coupled to, communicating with, cooperating, intertwining, juxtaposed, proximate, bound or bound to, having, having attributes, having a relationship or being related to, etc. The term “controller” refers to any device, system, or part thereof that controls at least one operation. Such a controller may be implemented in hardware, or a combination of hardware and software and / or firmware. The functionality associated with any particular controller may be centralized or distributed, local or remote. The phrase "at least one" when used with a list of items means that different combinations of one or more of the listed items may be used, and that only one item from the list may be required. For example, "at least one of A, B, and C" includes any of the following combinations: A, B, C, A and B, A and C, B and C, A and B and C.

[0037] Definitions of other specific words and phrases are provided throughout this patent document. Those skilled in the art will understand that, in many, if not most, cases, such definitions apply to the prior and future use of the words and phrases thus defined.

[0038] In this patent document, the combination of circuit blocks and the division of sub-circuit blocks are for illustrative purposes only. Without departing from the scope of this disclosure, the combination of circuit blocks and the division of sub-circuit blocks can be done in different ways.

[0039] In this utility model, Figures 1 to 11 The various embodiments used to describe the principles of this disclosure in this patent document are for illustrative purposes only and should not be construed as limiting the scope of this disclosure in any way. Those skilled in the art will understand that the principles of this disclosure can be implemented in any suitably arranged system or device.

[0040] The 5G and 4G RF power amplifiers used in conventional mobile phones and other terminals have different standards for current accumulation in the device. Table 2 shows the degree of acceptance of the current accumulation problem in the device under 4G LTE mode and 5G NR mode.

[0041] Table 2

[0042] Transverse edge concentration of emitter current Appropriate and acceptable Not accepting it will lead to a decrease in linear gain. Unilateral current concentration in the emitter region Appropriate and acceptable Refusal to accept this will lead to severe unilateral thermal effects.

[0043] Conventional RF power amplifier devices exhibit significant insufficient gain and low power in 5G NR systems, and their traditional device structures offer limited solutions to this problem. To address these issues, this invention designs a novel device structure that specifically addresses the problems of lateral current concentration and unilateral current accumulation in the transmitter region during high-current operation in 5G. This results in a uniform current distribution across the device structure, improving thermal performance, preventing performance degradation caused by high current at the emitter, and enhancing the stability of the RF power amplifier device under high-current conditions in 5G.

[0044] Figure 4 This is a schematic diagram of the structure of a radio frequency power device according to an embodiment of the present invention.

[0045] refer to Figure 4 The structure of a radio frequency power device with a two-finger emitter configuration is shown therein. Figure 4 In this context, the HBT2 device is a single-ended HBT device structure, while the HBT2D device is a back-to-back HBT device structure.

[0046] refer to Figure 4 The HBT2 device is a device structure applied in 5G NR mode. This structure is a single-ended HBT device structure, including: 1) an emitter, wherein the emitter includes a first emitter and a second emitter, and the emitter is surrounded by a base. Two metal openings are arranged at the upper right and lower right of the emitter to avoid forming a closed metal pattern, so as not to affect the stability of the photolithography process; 2) a base, which is configured to be formed around the emitter, and its main body area is located on one side of the emitter (e.g., the leftmost side), and this main body area will be used as the connection point of the base voltage Vb at this location; 3) a collector, which is configured to be located on the upper and lower sides of the base and is configured to be consistent with the length of the base.

[0047] According to an embodiment of the present invention, the two metal openings are configured to have the minimum linewidth required for the process of forming power devices.

[0048] refer to Figure 4The HBT2D device is an extended structure of a device structure that can be applied to 5G NR mode. This extended structure is a back-to-back HBT device structure, including a first HBT2 structure unit and a second HBT2 structure unit identical to the HBT2 structure. The first and second HBT2 structure units are configured to be connected back-to-back; that is, the main body region of the base of the first HBT2 structure unit and the main body region of the base of the second HBT2 structure unit are configured to be close together, with the main body region of the base positioned in the center, serving as the connection point for the base voltage Vb. Furthermore, the collectors of the first and second HBT2 structure units are connected together.

[0049] Figure 5 This is a schematic diagram showing a radio frequency power amplifier composed of power devices according to an embodiment of the present invention.

[0050] refer to Figure 5 The RF power amplifier includes: a driver stage amplification unit and a power stage amplification unit, a driver stage bias circuit, a power stage bias circuit and an input matching network, an interstage matching network and an output matching network.

[0051] In this system, the signal is input to the driver stage amplification unit through an input matching network, then amplified and input to the power stage amplification unit through an inter-stage matching network, and finally amplified by the power stage amplification unit and output through the input matching network. A bias voltage is provided to the driver stage amplification unit through a driver stage bias circuit, and a bias voltage is provided to the power stage amplification unit through a power stage bias circuit.

[0052] According to an embodiment of this invention, the power stage amplification unit is constructed using back-to-back HBT2D devices. Each back-to-back HBT2D device comprises two back-to-back HBT2 devices. Through these back-to-back HBT2D devices, the base voltage Vb is applied to the middle region of the device, thereby effectively improving the problems of lateral edge concentration of the emitter current and unilateral concentration of the emitter current in the RF power amplifier.

[0053] Figure 6 This is a schematic diagram showing a cross-sectional view of a power device according to an embodiment of the present invention.

[0054] refer to Figure 6 , Figure 6 It shows along Figure 4 A cross-sectional view of the HBT2 device in the Y2 direction is provided to illustrate the improvement of the RF power amplifier composed of power devices according to embodiments of the present invention on the problem of lateral edge concentration of the emitter current.

[0055] From Equation 1 below, it can be seen that, without considering the effect of thermal effect on current, the collector current I... c The exponent of (x) is proportional to the base voltage Vb.

[0056]

[0057] Where Ico is the collector saturation current, η is the collector current ideality factor, q is the electron charge, K is the Boltzmann constant, Ta is the thermodynamic temperature, and Vb(x) represents the base voltage at different locations.

[0058] See Figure 6 Taking the emitter edge as zero, due to the parasitic resistance Rsurf on the base surface and Rbluk of the base body, the base voltage drop gradually decreases closer to the interior of the emitter region (the larger the x value). This creates a gradient difference in the emitter current. The smaller the x value, the smaller the current gradient difference.

[0059] Assume the total width of the emitter cross-section of the power unit is W, which is composed of multiple emitter regions with a single emitter width of X, as shown in Formula 2.

[0060] W(sum)=X1+X2... Formula 2

[0061] As mentioned above, the smaller the value of x, the less the Vb voltage drop is affected by the parasitic resistance generated on the base region surface and the base region bulk parasitic resistance, and the smaller the transverse current gradient difference in the emitter region generated by it. Therefore, the total collector current is as shown in Formula 3 below.

[0062] I c (sum)=I c (X1)+I c (X2)......Formula 3

[0063] Therefore, reducing the width of a single emitter region decreases the x-value and also reduces the transverse current gradient difference in the emitter region. Finally, the power unit of the power amplifier is composed of multiple emitters, which improves the problem of transverse current concentration at the emitter edge.

[0064] Figure 7 This is a schematic diagram showing a cross-sectional view of a power device according to an embodiment of the present invention.

[0065] refer to Figure 7 , Figure 7 It shows along Figure 4 A cross-sectional view of the HBT2 device in the X2 direction is provided to illustrate the improvement of the problem of current accumulation on one side of the emitter region by the RF power amplifier composed of power devices according to embodiments of the present invention.

[0066] For reference Figure 3 As shown in the X1 cross-sectional diagram, the HBT1 device exhibits a situation where one side of the emitter region (Br region) lacks base metal. This results in a significant one-sided accumulation of emitter current on that side. Compared to the HBT1 structure, the HBT2D improves upon this by adding a base (BaseB) in the Br region. This added base (BaseB) creates the same potential difference as the main base region (BaseA), resulting in the same emitter current. (See [reference]). Figure 7 In this way, by supplementing the Br region with a base (supplementing the base metal), the problem of unilateral current accumulation in the emitter region is completely solved.

[0067] The RF power amplifier composed of power devices in this embodiment can improve and solve the problems of current concentration at the lateral edge of the transmitter region and current concentration on one side of the transmitter region. When the RF power amplifier operates in high-power mode, such as 5G NR mode, the current distribution of each transistor in its power unit is more even, the transistor performance remains stable, and its operating current is also a stable value. If these two problems are not solved, the lateral edge concentration effect and the one-sided current concentration effect in the transmitter region will lead to uneven current distribution in each transistor of the power unit. After the transistor performance deteriorates, more current needs to be compensated to improve linearity and other indicators, resulting in a much larger actual operating current. Figure 8 This is a schematic diagram illustrating the current and power output of power amplifiers employing different power device structures in 4G and 5G environments. (Reference) Figure 8 Because the power level of 4G LTE is 3dB lower than that of 5G NR, its actual operating current is lower, and it is less affected by these two effects. However, when the RF power amplifier is in 5G NR mode, its operating current is 2-2.5 times that in LTE mode. (Reference) Figure 8 Compared to power devices using the HBT1 structure, power devices using the HBT2D structure experience a significant reduction in current.

[0068] Figure 9 This is a schematic diagram illustrating the gain and power output of power amplifiers employing different power device structures in 4G and 5G environments. (Reference) Figure 9 When the RF power amplifier operates in high-power mode, such as in 5G NR mode, the current distribution of power devices using the HBT2D structure is more uniform. In this case, the heat generation of individual transistors is uniform. Conversely, when using power devices with the HBT1 structure, due to the failure to address the two aforementioned issues, there is non-uniform current in the emitter region of the power device, and the heat generation in different regions is also non-uniform. The carrier transport coefficient decreases in the overheated region, leading to degradation phenomena such as increased bulk carrier recombination, resulting in a significant reduction in power gain.

[0069] In summary, by using the power device with the HBT2 structure as described in the embodiments of this utility model, the problems of current concentration at the transverse edge of the transmitter region and current concentration on one side of the transmitter region are solved. As a result, the HBT2D power device based on the HBT2 structure has significant performance advantages in 5G NR mode, as shown in Table 3 below.

[0070] Table 3

[0071] HBT1 4G LTE Low Low HBT1 5G NR high middle HBT2D 5G NR middle high

[0072] Figure 10 This is a schematic diagram of the structure of a radio frequency power device according to another embodiment of the present invention.

[0073] refer to Figure 10 The structure of a radio frequency power device with a two-finger emitter configuration is shown therein. Figure 10 In this context, the HBT3 device is a single-ended HBT device structure, while the HBT3D device is a back-to-back HBT device structure.

[0074] refer to Figure 10 The HBT3 device is a device structure applicable to 5G NR mode. This structure is a single-ended HBT device structure, including: 1) an emitter, wherein the emitter includes a first emitter and a second emitter, and the emitter is surrounded by a base. Two metal openings are arranged above and below the middle of the emitter to avoid forming a closed metal pattern, so as not to affect the stability of the photolithography process; 2) a base, which is configured to be formed around the emitter, and its main body area is located on one side of the emitter (e.g., the leftmost side), and this main body area is used as the connection point of the base voltage Vb at this location; 3) a collector, which is configured to be located on the upper and lower sides of the base and is configured to be consistent with the length of the base.

[0075] According to an embodiment of the present invention, the two metal openings are configured to have the minimum linewidth required for the process of forming power devices.

[0076] refer to Figure 10The HBT3D device is an extended structure of a device structure that can be applied to 5G NR mode. This extended structure is a back-to-back HBT device structure, including a first HBT3 structure unit and a second HBT3 structure unit identical to the HBT3 structure. The first and second HBT3 structure units are configured to be connected back-to-back; that is, the main body region of the base of the first HBT3 structure unit and the main body region of the base of the second HBT3 structure unit are configured to be close together, with the main body region of the base positioned in the center, serving as the connection point for the base voltage Vb. Furthermore, the collectors of the first and second HBT3 structure units are connected together.

[0077] Figure 11 This is a schematic diagram of the structure of a radio frequency power device according to another embodiment of the present invention.

[0078] refer to Figure 11 The structure of a radio frequency power device with a two-finger emitter configuration is shown therein. Figure 11 In this context, the HBT4 device is a single-ended HBT device structure, while the HBT4D device is a back-to-back HBT device structure.

[0079] refer to Figure 11 The HBT4 device is a device structure applicable to 5G NR mode. This structure is a single-ended HBT device structure, including: 1) an emitter, wherein the emitter includes a first emitter and a second emitter, and the emitter is surrounded by a base. Two metal openings are arranged at the middle position of the upper right and lower right sides of the emitter to avoid forming a closed metal pattern, so as not to affect the stability of the photolithography process; 2) a base, which is configured to be formed around the emitter, and its main body area is located on one side of the emitter (e.g., the leftmost side), and this main body area will be used as the connection point of the base voltage Vb at this position; 3) a collector, which is configured to be located on the upper and lower sides of the base and is configured to be consistent with the length of the base.

[0080] According to an embodiment of the present invention, the two metal openings are configured to have the minimum linewidth required for the process of forming power devices.

[0081] refer to Figure 11The HBT4D device is an extended structure of a device structure that can be applied to 5G NR mode. This extended structure is a back-to-back HBT device structure, including a first HBT4 structure unit and a second HBT4 structure unit identical to the HBT4 structure. The first and second HBT4 structure units are configured to be connected back-to-back; that is, the main body region of the base of the first HBT4 structure unit and the main body region of the base of the second HBT4 structure unit are configured to be close together, with the main body region of the base positioned in the center, serving as the connection point for the base voltage Vb. Furthermore, the collectors of the first and second HBT4 structure units are connected together.

[0082] Although the above example uses a two-finger emitter for illustration, those skilled in the art should understand that the concept of this utility model can also be applied to power devices with three-finger or multi-finger emitters.

[0083] Those skilled in the art should understand that the structure of this utility model can be applied to various amplifier circuits. For example, an RF power amplifier may include an HBT amplifier unit, a CMOS amplifier unit, a SiGe amplifier unit, a single-ended amplifier, or a differential power amplifier unit.

[0084] Although this disclosure has been described with reference to exemplary embodiments, various changes and modifications may be suggested to those skilled in the art. This disclosure is intended to cover such changes and modifications that fall within the scope of the appended claims.

[0085] Any description in this invention should not be construed as implying that any particular element, step, or function is essential and must be included within the scope of the claims. The scope of the patent subject matter is defined solely by the claims.

Claims

1. A radio frequency power device, characterized by, include: An emitter, which is surrounded by a base; The base is configured to surround the emitter, and the base is configured to have an opening to avoid forming a closed metal pattern; as well as Collector, the collector is configured to be located on the upper and lower sides of the base.

2. The radio frequency power device of claim 1, wherein, The emitter includes N emitters for forming an N-finger emitter, where N is a natural number.

3. The radio frequency power device of claim 1, wherein, The base is configured to have two openings, which are respectively located at the upper right and lower right of the emitter.

4. The radio frequency power device according to claim 1, characterized in that, The base is configured to have two openings, which are respectively located above and below the center of the emitter.

5. The radio frequency power device according to claim 1, characterized in that, The base is configured to have two openings, which are respectively located above the right of the emitter and below the middle of the emitter.

6. The radio frequency power device according to any one of claims 3 to 5, characterized in that, The opening has the minimum linewidth required for the process of forming the power device.

7. The radio frequency power device according to claim 1, characterized in that, The base has a body region located on one side of the emitter and is configured to connect to the base voltage. The body region is configured to combine with the body region of another RF power device to form a back-to-back RF power device.

8. The radio frequency power device according to claim 7, characterized in that, The collector is configured to have the same length as the base.

9. The radio frequency power device according to claim 1, characterized in that, The power device is implemented using one of GaAs, CMOS, or SiGe processes.

10. A radio frequency power amplifier, characterized in that, include: Driver stage amplifier unit, power stage amplifier unit, driver stage bias circuit, power stage bias circuit and input matching network, inter-stage matching network and output matching network. The power stage amplification unit includes the radio frequency power device as described in any one of claims 1-9.

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