Heater and oven curing device

Abstract

The application relates to the technical field of solar cell manufacturing, and particularly provides a heater and a drying and curing device. The application aims to solve the problem that the oxygen-free environment requirement of copper-containing paste in the preparation process is extremely strict, and oxygen needs to be effectively isolated in the drying and curing stage. To this end, the application provides a heater, which comprises a heating plate, a first gas nozzle assembly and a second gas nozzle assembly. The heating plate comprises an operation area for carrying and heating a silicon wafer. The first gas nozzle assembly is used for blowing out a first protective gas to form a first gas film. The second gas nozzle assembly is used for blowing out the first protective gas to form a second gas film. The height of the first gas film and the second gas film is different, and the directions of the first gas film and the second gas film are crossed. The first gas film and the second gas film at least cover the operation area. The relative molecular mass of the first protective gas is greater than that of oxygen. The application can provide reliable oxygen-free environment guarantee for the metallization of the silicon wafer.

Description

Technical Field

[0001] This application relates to the field of solar cell manufacturing technology, specifically to a heater and a drying and curing apparatus. Background Technology

[0002] The metallization process of Tunnel Oxide Passivating Contacts (TOPCon) cells is a crucial step in battery manufacturing. In this process, silver / aluminum paste is used on the front side of the cell, and silver paste is used on the back. Then, screen printing, drying, and high-temperature sintering are performed to form grid lines on the cell surface. Because of the high silver content in the paste, its cost accounts for approximately one-tenth of the manufacturing cost of TOPCon cells, limiting further cost reduction potential.

[0003] Related technologies employ nano-copper or silver-coated copper paste to fabricate grid lines in order to reduce production costs. However, the preparation process of copper-containing paste requires an extremely strict oxygen-free environment. During the drying and curing stages, oxygen must be effectively isolated; otherwise, copper oxidation will affect the cell efficiency of the solar cell.

[0004] Accordingly, a new technical solution is needed in this field to solve the above problems. Utility Model Content

[0005] In order to solve at least one of the above-mentioned problems in the prior art, namely, to solve the problem that the preparation process of copper-containing paste requires an extremely strict oxygen-free environment, and that oxygen needs to be effectively isolated during the drying and curing stages, otherwise copper oxidation will affect the cell efficiency of solar cells.

[0006] In a first aspect, this application provides a heater, the heater comprising: a heating plate including an operating area for supporting and heating a silicon wafer; a first nozzle assembly for blowing out a first protective gas to form a first gas film; and a second nozzle assembly for blowing out the first protective gas to form a second gas film; wherein the first gas film and the second gas film have different heights and intersecting directions, the first gas film and the second gas film at least cover the operating area, and the relative molecular mass of the first protective gas is greater than the relative molecular mass of oxygen.

[0007] In some embodiments, the first air nozzle assembly includes a first air nozzle and an airflow baffle, the first air nozzle and the airflow baffle being disposed on a first side and a second side opposite to each other in the operating area, and the airflow baffle being used to block the first protective gas blown out by the first air nozzle to form the first air film.

[0008] In some embodiments, the second nozzle assembly includes a plurality of second nozzles, which are respectively disposed on a third side and a fourth side opposite to the operating area and have a different height from the first nozzle. The second nozzles are used to spray the first protective gas to form the second gas film; wherein the first side and the third side are adjacent to each other.

[0009] In some embodiments, the heater further includes a plurality of side flow channels, each corresponding to a first air nozzle, a second air nozzle located on a third side, and a second air nozzle located on a fourth side; wherein the side flow channels are disposed on the side of the heating plate away from the airflow baffle, a first side of the side flow channel is connected to the first air nozzle or the second air nozzle, and a second side of the side flow channel is connected to an external gas source of the first protective gas.

[0010] In some embodiments, both the third side and the fourth side are provided with a first side channel communicating with the corresponding side flow channel; wherein, the second air nozzle includes an injection section and a connecting section, the end of the injection section away from the connecting section is provided with a first air outlet in the shape of a duckbill, and the connecting section is inserted into the first side channel.

[0011] In some embodiments, the first side is provided with a second side channel that communicates with the corresponding side flow channel, the first air nozzle is connected to the second side channel, and the end of the first air nozzle away from the second side channel is provided with a second air outlet in the shape of a duckbill.

[0012] In some embodiments, the second air nozzle located on the third side corresponds one-to-one with the second air nozzle located on the fourth side or is arranged alternately.

[0013] In some embodiments, the bottom of the operating area is provided with a plurality of vent holes, which can eject the first protective gas to provide gas buoyancy for the silicon wafer above the operating area.

[0014] In some embodiments, the heater further includes a central flow channel disposed on the side of the heating plate away from the airflow baffle, a first side of the central flow channel communicating with the air outlet, and a second side of the central flow channel communicating with an external gas source for the first protective gas.

[0015] Secondly, this application provides a drying and curing apparatus, which includes: an equipment housing with an operating chamber; a feeding and conveying device for transporting silicon wafers to the operating chamber; a heater movably disposed in the operating chamber for receiving and heating silicon wafers falling from the feeding and conveying device; and a gas distribution device capable of releasing protective gas to purge the heating plate.

[0016] In some embodiments, the drying and curing apparatus further includes: a lamp source assembly disposed downstream of the feeding and conveying device for providing high-temperature curing silicon wafers; a cooling nozzle disposed downstream of the lamp source assembly for spraying protective gas to cool the cured silicon wafers; a discharge conveying device for conveying the silicon wafers out of the operating chamber; and a transfer device disposed downstream of the cooling nozzle for transferring the silicon wafers on the heating plate to the discharge conveying device.

[0017] In some embodiments, the equipment housing includes an inlet and an outlet, and the drying and curing device further includes: a positioning grating for detecting the position of the silicon wafer; an inlet air curtain disposed at the inlet, capable of releasing protective gas to isolate external air; a linear module for carrying the heater to move horizontally along the operating chamber; an outlet air curtain disposed at the outlet, capable of releasing protective gas to isolate external air; and a gas circulation device connected to the operating chamber for drawing in and processing the gas inside the operating chamber to obtain the processed protective gas, and outputting the processed protective gas to the inlet air curtain, the outlet air curtain, and the operating chamber.

[0018] In some embodiments, the protective gas released by the gas distribution device, the cooling nozzle, the inlet air curtain, and the outlet air curtain is nitrogen or a mixture of nitrogen and the first protective gas; and / or, the transfer device includes a suction cup for adsorbing the silicon wafer on the heater and transferring it to the discharge conveying device.

[0019] Under the premise of adopting the above technical solution, the operating area of ​​the heating plate of the heater provided in this application is used to support and heat the silicon wafer. The first air nozzle assembly and the second air nozzle assembly can form two air films located at different heights and with intersecting directions. This can ensure that the silicon wafer is completely isolated from the external gas during the drying and curing process, thereby providing a reliable oxygen-free environment for the metallization of the silicon wafer. Attached Figure Description

[0020] The preferred embodiments of this application are described below with reference to the accompanying drawings, in which:

[0021] Figure 1 This is a schematic diagram of the heater in this application;

[0022] Figure 2 yes Figure 1 A top view of the intermediate heater structure;

[0023] Figure 3 yes Figure 1 A side view of the intermediate heater structure;

[0024] Figure 4 yes Figure 1A schematic diagram of the structure of the heater from another angle;

[0025] Figure 5 yes Figure 1 Another side view of the structure of the central heater;

[0026] Figure 6 yes Figure 1 Schematic diagram of the middle flow channel;

[0027] Figure 7 yes Figure 1 Schematic diagram of the middle side flow channel;

[0028] Figure 8 yes Figure 1 A schematic diagram of the structure of the heater from another angle;

[0029] Figure 9 yes Figure 4 Enlarged perspective view of structure A in the middle;

[0030] Figure 10 yes Figure 1 Schematic diagram of the structure of the second air nozzle;

[0031] Figure 11 yes Figure 4 Enlarged perspective view of structure B in the middle;

[0032] Figure 12 yes Figure 1 Schematic diagram of the structure of the first air nozzle;

[0033] Figure 13 This is a schematic diagram of the drying and curing apparatus in this application.

[0034] Figure label:

[0035] 1. Heating plate; 2. First air nozzle; 201. Second air outlet; 3. Airflow baffle; 4. Second air nozzle; 401. Spray section; 402. Connecting section; 403. First air outlet; 5. Silicon wafer; 6. Air outlet; 7. Central flow channel; 8. Side flow channel; 9. First side channel; 10. Second side channel; 11. Positioning flange; 12. Heating rod; 13. Temperature sensor; 14. Outer protective plate; 15. Heat insulation cotton; 16. Heater bracket; 17. Equipment housing; 18. Feeding and conveying device; 19. Air distribution device; 20. Lamp source assembly; 21. Cooling nozzle; 22. Discharge and conveying device; 23. Transfer device; 24. Positioning grating; 25. Inlet air curtain; 26. Linear module; 27. Outlet air curtain; 28. Gas circulation device. Detailed Implementation

[0036] Preferred embodiments of this application are described below with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are merely for explaining the technical principles of this application and are not intended to limit the scope of protection of this application. Those skilled in the art can make adjustments as needed to adapt to specific application scenarios. Such changes in application scenarios do not deviate from the basic principles of this application and fall within the scope of protection of this application.

[0037] In the embodiments of this application, the terms "upper," "lower," "inner," "middle," "outer," "front," and "rear," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are mainly for better describing the embodiments of this application and their implementations, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation. Furthermore, some of the above terms may be used to indicate other meanings besides orientation or positional relationship; for example, the term "upper" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application according to the specific circumstances.

[0038] It should be noted that, in the description of this preferred embodiment, unless otherwise explicitly specified and limited, the terms "connected" and "connected" should be interpreted broadly. For example, they can refer to mechanical connections or electrical connections, direct connections or indirect connections through an intermediate medium, or connections within two components. These should not be construed as limitations on this application. Furthermore, the terms "first," "second," "third," and "fourth" are used for descriptive purposes only, and those skilled in the art can understand the specific meaning of these terms in this application according to the specific circumstances.

[0039] Firstly, this application provides a heater.

[0040] Combination Figure 1 , Figure 2 and Figure 3 As shown, the heater provided in this application includes a heating plate 1, a first air nozzle assembly, and a second air nozzle assembly.

[0041] The heating plate 1 includes an operating area for supporting and heating the silicon wafer 5. The silicon wafer 5 is in direct contact with the heating plate 1, and this heating method enables the silicon wafer 5 to heat up rapidly compared to hot air heating.

[0042] The first nozzle assembly is used to blow out a first protective gas to form a first gas film.

[0043] The second nozzle assembly is used to blow out the first protective gas to form a second gas film.

[0044] The first and second gas films have different heights and intersect in direction. The first and second gas films at least cover the operating area. The relative molecular mass of the first protective gas is greater than that of oxygen.

[0045] The heating plate of the heater provided in this application has an operating area for supporting and heating silicon wafers. The first air nozzle assembly and the second air nozzle assembly can form two air films located at different heights and with intersecting directions. This ensures that the silicon wafers are completely isolated from external gases during the drying and curing process, thereby providing a reliable oxygen-free environment for the metallization of silicon wafers.

[0046] In some embodiments, combined with Figure 1 , Figure 2 and Figure 3 As shown, the first nozzle assembly includes a first nozzle 2 and an airflow baffle 3. The first nozzle 2 and the airflow baffle 3 are respectively disposed on a first side and a second side opposite to each other in the operating area. The airflow baffle 3 is used to block the first protective gas blown out by the first nozzle 2 to form a first gas film. The second nozzle assembly includes multiple second nozzles 4, which are respectively disposed on a third side and a fourth side opposite to each other in the operating area. The second nozzles 4 are at different heights from the first nozzle 2. The second nozzles 4 are used to spray the first protective gas to form a second gas film. The first side and the third side are adjacent. With this arrangement, the airflow baffle 3 can block the first protective gas sprayed out by the first nozzle 2 to form the first gas film, while the second nozzles 4 located on the third and fourth sides can spray the first protective gas to form the second gas film. This can form two gas films at different heights and in intersecting directions, thus ensuring that the silicon wafer 5 is completely isolated from the external gas during the drying and curing process, thereby providing a reliable oxygen-free environment for the metallization of the silicon wafer.

[0047] In some embodiments, combined with Figure 4 As shown, multiple vents 6 are provided at the bottom of the operating area. These vents 6 eject a first protective gas to provide buoyancy for the silicon wafer 5 above the operating area. During the process of the silicon wafer 5 descending to the heater, the air ejected from the vents 6 provides a certain amount of buoyancy, reducing the breakage rate of the silicon wafer 5. During the silicon wafer unloading process, the air ejected from the vents 6 prevents the silicon wafer 5 from adhering to the operating area, facilitating its transfer and further reducing the breakage rate.

[0048] In some embodiments, combined with Figure 5 and Figure 6 As shown, the heater also includes a central flow channel 7, which is located on the side of the heating plate 1 away from the airflow baffle 3. The first side of the central flow channel 7 is connected to the air outlet 6, and the second side of the central flow channel 7 is connected to the external gas source of the first protective gas. The central flow channel 7 facilitates the uniform supply of gas to the air outlet 6.

[0049] Optionally, combined Figure 5and Figure 6 As shown, multiple first ports and multiple second ports are respectively provided on both sides of the central flow channel 7. The first ports are connected to the air outlet 6 in a corresponding manner, and the second ports are connected to the external air source.

[0050] In some embodiments, combined with Figure 5 , Figure 7 and Figure 8 As shown, the heater also includes multiple side flow channels 8, each corresponding to a first air nozzle 2, a second air nozzle 4 located on a third side, and a second air nozzle 4 located on a fourth side. The side flow channels 8 are located on the side of the heating plate 1 away from the airflow baffle 3. The first side of the side flow channel 8 is connected to either the first air nozzle 2 or the second air nozzle 4, and the second side of the side flow channel 8 is connected to an external gas source for the first protective gas. The side flow channels 8 facilitate uniform gas supply to the first air nozzle 2, the second air nozzle 4 located on the third side, and the second air nozzle 4 located on the fourth side.

[0051] Optionally, combined Figure 8 As shown, the heater also includes three side flow channels 8, namely a first side flow channel, a second side flow channel and a third side flow channel. The first side flow channel is used to supply air to the first air nozzle 2, the second side flow channel is used to supply air to the second air nozzle 4 located on the third side, and the third side flow channel is used to supply air to the second air nozzle 4 located on the fourth side.

[0052] Optionally, a third port and a fourth port are respectively provided on both sides of the side flow channel 8. The third port is connected to the first air nozzle 2, the second air nozzle 4 located on the third side, or the second air nozzle 4 located on the fourth side, and the fourth port is connected to an external air source.

[0053] Figure 9 yes Figure 4 An enlarged perspective view of structure A. In some embodiments, combined with Figure 9 As shown, both the third and fourth sides are provided with a first side channel 9 that communicates with the corresponding side flow channel 8. Among them, combined with... Figure 10 As shown, the second nozzle 4 includes an injection section 401 and a connecting section 402. The end of the injection section 401 away from the connecting section 402 is provided with a first air outlet 403 in the shape of a duckbill. The connecting section 402 is inserted into the first side channel 9. The second nozzle 4 can be connected to the corresponding side flow channel 8 through the first side channel 9 to supply air to the second nozzle 4.

[0054] Figure 11 yes Figure 4 An enlarged perspective view of structure B. In some embodiments, combined with Figure 11 As shown, a second side channel 10 is provided on the first side, which is connected to the corresponding side flow channel 8. The first air nozzle 2 is connected to the second side channel 10, and combined with... Figure 12As shown, the first air nozzle 2 has a duckbill-shaped second air outlet 201 at the end away from the second side channel 10. The first air nozzle 2 can be connected to the corresponding side flow channel 8 through the second side channel 10 to supply air to the first air nozzle 2.

[0055] In some embodiments, the operating area is recessed into a groove structure, and the depth of the groove structure ranges from 2mm to 3mm. For example, the depth of the groove structure can be 2mm, 2.3mm, 2.5mm, 2.7mm, or 3mm. This arrangement facilitates the deposition of the first protective gas and improves the isolation effect between the silicon wafer 5 and the external gas.

[0056] In some embodiments, the second air nozzle 4 located on the third side and the second air nozzle 4 located on the fourth side are arranged in a one-to-one correspondence or alternately. Both arrangements can form an air film. The second air nozzle 4 located on the third side sprays air towards the fourth side, and the second air nozzle 4 located on the fourth side sprays air towards the third side.

[0057] In some embodiments, the first air nozzle 2 is disposed on the side of the second air nozzle 4 away from the heating plate 1. Alternatively, the first air nozzle 2 is disposed on the side of the second air nozzle 4 closer to the heating plate 1, and the heights of the first air nozzle 2 and the second air nozzle 4 can be flexibly set according to actual needs. In this way, the gas films formed by the gases ejected from the first air nozzle 2 and the second air nozzle 4 have different heights, which can ensure that the silicon wafer 5 is completely isolated from external gases during the drying and curing process, thereby providing a reliable oxygen-free environment for the metallization of the silicon wafer.

[0058] In some embodiments, combined with Figure 1 As shown, the heater also includes a positioning flange 11 disposed around the periphery of the operating area. The positioning flange 11 helps to determine the position of the silicon wafer on the heating plate 1. The positioning flange 11 is 0.5mm-1mm higher than the heating plate 1, so that the positioning flange is slightly higher than the heating plate 1, which can both play a positioning role and avoid interfering with the gas film.

[0059] In some embodiments, combined with Figure 5 As shown, the heater also includes a heating rod 12 and a temperature sensor 13, which are movably disposed inside the heating plate 1. The heating rod 12 can provide heat to the heating plate 1 to bring it to the required temperature, and the temperature sensor 13 can detect the temperature of the heating plate 1 for easy temperature control.

[0060] In some embodiments, combined with Figure 5As shown, the heater also includes an outer protective plate 14 and heat insulation cotton 15. The outer protective plate 14 is disposed on opposite sides of the heating plate 1, and the heat insulation cotton 15 is disposed between the outer protective plate 14 and the heating plate 1. The heat insulation cotton 15 is used for heat insulation to reduce the temperature influence of the heating plate 1 on surrounding components. The outer protective plate 14 is used to connect with the heater bracket to fix and support the heater.

[0061] In some embodiments, the first protective gas is carbon dioxide or argon. Carbon dioxide and argon have a greater relative molecular mass than oxygen, enabling them to form a distinct boundary layer with oxygen and effectively isolate it. Optionally, carbon dioxide is chosen as the first protective gas. Carbon dioxide is relatively inexpensive, which helps reduce costs.

[0062] Optionally, the airflow baffle 3 can move towards or away from the first air nozzle 2. The movable airflow baffle 3 can move on the surface of the heating plate 1 according to the airflow rate ejected from the first air nozzle 2. The airflow baffle 3 can be set to be fixed or movable as needed.

[0063] Secondly, this application provides a drying and curing apparatus.

[0064] Combination Figure 13 As shown, the drying and curing apparatus provided in this application includes an equipment housing 17, a feeding and conveying device 18, the aforementioned heater, and a gas distribution device 19. The feeding and conveying device 18 is used to transport the silicon wafer 5 to the operating chamber. The heater is movably disposed in the operating chamber to receive and heat the silicon wafer 5 falling from the feeding and conveying device, providing the silicon wafer 5 with oxygen-free drying and curing conditions. The gas distribution device 19 can release protective gas to purge the heating plate 1, further improving the reliability of the oxygen-free environment.

[0065] Combination Figure 13 As shown, the drying and curing apparatus provided in this application further includes a lamp source assembly 20, a cooling nozzle 21, a discharge conveying device 22, and a transfer device 23. The lamp source assembly 20 is located downstream of the discharge conveying device and is used to provide high-temperature curing silicon wafers 5. The cooling nozzle 21 is located downstream of the lamp source assembly and can spray protective gas to cool and cure the silicon wafers 5. The discharge conveying device 22 is located at the discharge port of the equipment housing 17 and is used to deliver the silicon wafers 5 out of the operating chamber. The transfer device 23 is located downstream of the cooling nozzle 21 and is used to transfer the silicon wafers 5 on the heating plate 1 to the discharge conveying device 22.

[0066] After screen printing, silicon wafer 5 enters the drying and curing device through feeding and conveying device 18. Feeding and conveying device 18 forms an angle of 5° to 10° with the horizontal ground, which facilitates the silicon wafer 5 falling onto the heating plate 1. The heater moves below feeding and conveying device 18 and rotates to an appropriate angle, causing the silicon wafer 5 to fall onto the heater. The heater heats the silicon wafer 5, causing the volatiles in the paste to evaporate. During the drying process, the heater remains in place for a preset time. After the silicon wafer 5 is dried, the heater moves horizontally towards the lamp source assembly 20. After the silicon wafer 5 is heated by the heater, it is further heated by the lamp source assembly 20 to meet the curing process conditions. After curing, the silicon wafer 5 continues to move horizontally to the cooling nozzle 21 for cooling. After cooling, the transfer device 23 transfers the cooled silicon wafer 5 to the discharge conveying device 22 for discharge, completing the entire drying and curing process. During this process, the heater provides two layers of gas film to isolate the silicon wafer 5 from the external gas, while the gas distribution device 19 releases protective gas to purge the heating plate 1, which can further remove oxygen around the heating plate 1, providing a reliable oxygen-free environment for the metallization of the silicon wafer.

[0067] Optionally, during the drying process, the temperature of the heating plate 1 is 100°C, and the dwell time of the heating plate 1 is 10s to 60s.

[0068] Optionally, the light source assembly 20 can be raised or lowered, thus facilitating adjustment of its distance from the silicon wafer 5.

[0069] Optionally, the protective gas released by the gas distribution device, cooling nozzle, inlet air curtain, and outlet air curtain is nitrogen or a mixture of nitrogen and a first protective gas. Nitrogen is low in cost and does not react with copper-containing paste. Using nitrogen or a mixture of gases for protection in the operating chamber, gas distribution device, cooling nozzle, inlet air curtain, and outlet air curtain, and using carbon dioxide for localized enhanced protection in the heater, not only provides a reliable oxygen-free environment for the metallization of silicon wafer 5, but also helps to reduce costs.

[0070] In some embodiments, combined with Figure 13 As shown, the drying and curing apparatus also includes a retractable heater support 16, with the heating plate 1 rotatably mounted on top of the heater support 16. The heater support 16 facilitates support of the heating plate 1 and allows for adjustment of its height and tilt angle, enabling it to be adjusted to a suitable height and tilt angle to better catch falling silicon wafers and reduce wafer breakage. For example, during the process of catching silicon wafer 5, the heating plate 1 rotates so that the angle between the silicon wafer 5 and the heating plate 1 is 3°.

[0071] In some embodiments, combined with Figure 13As shown, the drying and curing device also includes a positioning grating 24, which is used to detect the position of the silicon wafer 5. When the silicon wafer 5 is detected to have reached the tail of the feeding and conveying device 18, the control device controls the heating plate 1 to adjust to a preset tilt and height to catch the falling silicon wafer. At the same time, the control device controls the air outlet 6 of the heater to spray air to provide gas buoyancy for the silicon wafer 5, so that the silicon wafer 5 falls smoothly onto the heating plate 1, reducing the breakage rate of the silicon wafer 5.

[0072] In some embodiments, combined with Figure 13 As shown, the drying and curing device also includes an inlet air curtain 25, which is located at the inlet of the equipment housing 17 and can release gas to isolate external air. By setting the inlet air curtain 25, external air can be prevented from entering the operating chamber. The gas released by the inlet air curtain 25 can be nitrogen or a mixed protective gas.

[0073] In some embodiments, combined with Figure 13 As shown, the drying and curing device also includes a linear module 26, which is used to carry the heater to move horizontally along the operating chamber.

[0074] In some embodiments, combined with Figure 13 As shown, the drying and curing device also includes a discharge port air curtain 27, which is located at the discharge port of the equipment housing 17 and can release gas to isolate external air. By setting the discharge port air curtain 27, external air can be prevented from entering the operating chamber. The gas released by the discharge port air curtain 27 can be nitrogen or a mixed protective gas.

[0075] In some embodiments, combined with Figure 13 As shown, the drying and curing device also includes a gas circulation device 28, which is connected to the operating chamber. The gas circulation device 28 draws in the treated protective gas from inside the operating chamber and outputs the treated protective gas to the inlet air curtain 25, the outlet air curtain 27, and the operating chamber. The gas circulation device 28 mainly removes particulate matter, oxygen, and other impurities from the exhaust gas. The filtered mixed gas is then reintroduced into the drying and curing device to cool the silicon wafers 5, isolate the air at the inlet and outlet, or fill the operating chamber with the protective gas to prevent external air from entering the operating chamber. This achieves the purpose of recycling and helps reduce costs.

[0076] In some embodiments, the transfer device 23 includes a suction cup for adsorbing the silicon wafer 5 on the heater and transferring it to the discharge conveyor.

[0077] The technical solutions of this application have been described in conjunction with the accompanying drawings. However, it will be readily understood by those skilled in the art that the scope of protection of this application is obviously not limited to these specific embodiments. Without departing from the principles of this application, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions resulting from these changes or substitutions will all fall within the scope of protection of this application.

Claims

1. A heater, characterized in that, The heater includes: A heating plate, including an operating area for supporting and heating a silicon wafer; A first nozzle assembly is used to blow out a first protective gas to form a first gas film; The second nozzle assembly is used to blow out the first protective gas to form a second gas film; The first gas film and the second gas film have different heights and intersect in direction. The first gas film and the second gas film at least cover the operating area. The relative molecular mass of the first protective gas is greater than that of oxygen.

2. The heater according to claim 1, characterized in that, The first air nozzle assembly includes a first air nozzle and an airflow baffle. The first air nozzle and the airflow baffle are respectively disposed on a first side and a second side opposite to each other in the operating area. The airflow baffle is used to block the first protective gas blown out by the first air nozzle to form the first air film.

3. The heater according to claim 2, characterized in that, The second nozzle assembly includes a plurality of second nozzles, which are respectively disposed on the third and fourth sides opposite to the operating area and have different heights from the first nozzle. The second nozzles are used to spray the first protective gas to form the second gas film; wherein the first side and the third side are adjacent.

4. The heater according to claim 3, characterized in that, The heater also includes a plurality of side flow channels, which correspond one-to-one with the first air nozzle, the second air nozzle located on the third side, and the second air nozzle located on the fourth side; The side flow channel is located on the side of the heating plate away from the airflow baffle. The first side of the side flow channel is connected to the first air nozzle or the second air nozzle, and the second side of the side flow channel is connected to the external air source of the first protective gas.

5. The heater according to claim 4, characterized in that, Both the third side and the fourth side are provided with a first side channel that communicates with the corresponding side flow channel; wherein, the second air nozzle includes an injection section and a connecting section, the end of the injection section away from the connecting section is provided with a first air outlet in the shape of a duckbill, and the connecting section is inserted into the first side channel.

6. The heater according to claim 4, characterized in that, The first side is provided with a second side channel that is connected to the corresponding side flow channel. The first air nozzle is connected to the second side channel. The end of the first air nozzle away from the second side channel is provided with a second air outlet in the shape of a duckbill.

7. The heater according to claim 3, characterized in that, The second air nozzle located on the third side corresponds one-to-one with the second air nozzle located on the fourth side or is arranged alternately.

8. The heater according to any one of claims 2 to 7, characterized in that, The bottom of the operating area is provided with multiple vents, which can spray out the first protective gas to provide gas buoyancy for the silicon wafer above the operating area.

9. The heater according to claim 8, characterized in that, The heater further includes a central flow channel, which is disposed on the side of the heating plate away from the airflow baffle. The first side of the central flow channel is connected to the air outlet, and the second side of the central flow channel is connected to an external gas source for the first protective gas.

10. A drying and curing apparatus, characterized in that, The drying and curing device includes: The equipment housing includes an operating chamber; A feeding and conveying device is used to transport silicon wafers to the operating cavity; The heater according to any one of claims 1 to 9 is movably disposed in the operating chamber for receiving and heating the silicon wafers falling from the feeding and conveying device; The gas distribution device can release protective gas to purge the heating plate.

11. The drying and curing apparatus according to claim 10, characterized in that, The drying and curing apparatus further includes: A light source assembly, located downstream of the feeding and conveying device, is used to provide high-temperature curing silicon wafers; A cooling nozzle, located downstream of the lamp source assembly, is capable of spraying protective gas to cool and solidify the silicon wafer. A material conveying device is used to deliver silicon wafers out of the operating cavity; A transfer device, located downstream of the cooling nozzle, is used to transfer the silicon wafers on the heating plate to the discharge conveying device.

12. The drying and curing apparatus according to claim 11, characterized in that, The equipment housing includes an inlet and an outlet, and the drying and curing device further includes: Positioning gratings are used to detect the position of silicon wafers; An air curtain at the feed inlet is provided to release protective gas to isolate external air. A linear module is used to carry the heater and move it horizontally along the operating chamber; An air curtain is provided at the discharge port to release protective gas and isolate it from the outside air. A gas circulation device, connected to the operating chamber, is used to draw in and process the gas inside the operating chamber to obtain a processed protective gas, and to output the processed protective gas to the inlet air curtain, the outlet air curtain, and the operating chamber.

13. The drying and curing apparatus according to claim 12, characterized in that, The protective gas released by the gas distribution device, the cooling nozzle, the inlet air curtain, and the outlet air curtain is nitrogen or a mixture of nitrogen and the first protective gas; and / or, The transfer device includes a suction cup, which is used to adsorb the silicon wafers on the heater and transfer them to the discharge conveying device.

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