Grinding table and grinding plant

Abstract

The utility model discloses a kind of grinding table and grinding equipment, wherein grinding table includes: support table and grinding pad. Grinding pad is set to support table, the side of grinding pad away from support table is grinding face, and grinding pad is set to hollow structure, to make the edge of the axial end surface of wafer be ground by grinding face. Therefore, in wafer grinding process, the edge of wafer can be contacted with grinding pad, and the central region of wafer is set to the above of grinding pad hollow region, to avoid the central region of wafer and grinding pad, whereby in grinding process, only the edge of wafer can be ground, to avoid the central region of wafer abrasion, to improve the quality after wafer grinding.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing technology, and in particular to a grinding table and grinding equipment. Background Technology

[0002] During wafer fabrication, with the alternation of different processes such as thin film deposition, exposure, and etching, the edge treatment of the wafer may be insufficient, leading to thin film residue. This residue may peel off during subsequent processes, causing wafer defects or equipment contamination. Therefore, edge treatment of the wafer is necessary. Traditionally, wafer edge treatment methods mainly include etching and mechanical polishing. Etching has drawbacks such as insufficient precision or high cost. Mechanical polishing, on the other hand, is a global planar polishing process, causing wear in the central area of ​​the wafer during the polishing process, thus reducing wafer quality. Utility Model Content

[0003] This invention aims to solve at least one of the technical problems existing in the prior art. To this end, this invention proposes a grinding table that can be used to grind only the edges of a wafer to improve wafer quality.

[0004] This utility model also provides a grinding device including the above-mentioned grinding table.

[0005] A grinding table according to a first aspect of the present invention includes: a support table and a grinding pad.

[0006] The polishing pad is disposed on the support platform, and the side of the polishing pad facing away from the support platform is the polishing surface. The polishing pad is configured as a hollow structure so that the polishing surface can polish the edge of the axial end face of the wafer.

[0007] The grinding table according to the embodiments of the present invention has at least the following beneficial effects:

[0008] In this embodiment, the polishing pad has a hollow structure, meaning that the central area of ​​the polishing pad has clearance space. Therefore, during the wafer polishing process, the edge of the wafer can contact the polishing pad, and the central area of ​​the wafer can be positioned above the clearance space of the polishing pad, thereby preventing the central area of ​​the wafer from contacting the polishing pad. As a result, during the polishing process, only the edge of the wafer can be polished, thus avoiding wear on the central area of ​​the wafer and improving the quality of the polished wafer.

[0009] According to some embodiments of the present invention, the support platform has a clearance groove on the side facing the grinding pad, and the grinding pad is arranged around the clearance groove.

[0010] According to some embodiments of the present invention, the polishing pad has a circular structure, and the polishing table is configured such that the inner diameter of the polishing pad is smaller than the diameter of the wafer.

[0011] According to some embodiments of the present invention, the grinding table includes multiple grinding pads of different sizes, and each grinding pad can be individually and detachably connected to the support table.

[0012] According to some embodiments of the present invention, the support platform has a clearance groove, which is a circular stepped groove. The inner wall of the clearance groove includes multiple annular planes, and each annular plane can be used to install at least one of the grinding pads.

[0013] According to some embodiments of the present invention, the support platform also has a sewage discharge channel, one end of which is connected to the vented groove, and the other end is located on the outer surface of the support platform, so that the grinding fluid located in the vented groove can be discharged from the vented groove.

[0014] According to some embodiments of the present invention, the grinding surface has a sludge storage tank for containing the debris generated during grinding.

[0015] According to some embodiments of the present invention, the grinding pad has a circular structure, the grinding table further includes a driving mechanism, the driving mechanism is connected to the support table and is used to drive the support table to rotate, and the sludge storage tank is connected to the radial outer wall of the grinding pad.

[0016] According to some embodiments of the present invention, the support platform has a clearance groove on the side facing the polishing pad, the polishing pad is arranged around the clearance groove, and the polishing platform is configured such that the inner diameter of the polishing pad is smaller than the diameter of the wafer, the polishing pad includes a plurality of sludge storage grooves distributed circumferentially along the polishing pad, and the sludge storage grooves extend to the inner wall of the polishing pad.

[0017] A polishing apparatus according to a second aspect embodiment of the present invention includes a wafer carrier and a polishing table as described in the first aspect embodiment. The wafer carrier is located on one side of the polishing table along the normal direction of the polishing surface and is used to load a wafer. At least one of the polishing table and the wafer carrier is rotatable, and the wafer carrier is movable toward the polishing table so that the wafer is clamped between the wafer carrier and the polishing surface.

[0018] The grinding apparatus according to the embodiments of the present invention has at least the following beneficial effects:

[0019] The polishing table using the first aspect embodiment has a hollow polishing pad, meaning the central area of ​​the polishing pad has a clearance space, and the polishing surface protrudes from the support platform. Therefore, during wafer polishing, the edge of the wafer can contact the polishing pad, and the central area of ​​the wafer is positioned above the clearance space of the polishing pad, thereby preventing contact between the central area of ​​the wafer and the polishing pad. Thus, during the polishing process, only the edge of the wafer can be polished, preventing wear on the central area and improving the quality of the polished wafer.

[0020] Additional aspects and advantages of this invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0021] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein:

[0022] Figure 1 This is a schematic diagram of a typical existing wafer structure;

[0023] Figure 2 for Figure 1 A schematic diagram of the structure of a grinding table for a wafer and a first type of grinding station according to the first aspect of the present invention;

[0024] Figure 3 for Figure 1 A sectional view;

[0025] Figure 4 for Figure 1 A cross-sectional view of a wafer and a second type of grinding table according to the first aspect of the present invention;

[0026] Figure 5 for Figure 1 A cross-sectional view of a central wafer and a third type of grinding table according to the first aspect of this utility model;

[0027] Figure 6 for Figure 1 A cross-sectional view of a central wafer and a fourth type of grinding table according to the first aspect of this utility model;

[0028] Figure 7 for Figure 1 A cross-sectional view of a fifth type of grinding table in the first aspect embodiment of the present invention;

[0029] Figure 8 for Figure 1 A cross-sectional view of a wafer and a sixth type of grinding table according to the first aspect of the present invention;

[0030] Figure 9 for Figure 1Cross-sectional view of the seventh type of grinding table of the first aspect embodiment of the present invention.

[0031] Figure 10 for Figure 1 A cross-sectional view of a grinding table for a wafer and an eighth type of grinding table according to the first aspect of the present invention;

[0032] Figure 11 This is a schematic diagram of the structure of the ninth type of grinding table according to the first aspect of the present invention;

[0033] Figure 12 This is a schematic diagram of the grinding equipment according to a second aspect embodiment of the present invention.

[0034] Figure label:

[0035] 1000 for the wafer, 2000 for the edge of the wafer; 3000 for the central area of ​​the wafer;

[0036] Support platform 100, clearance groove 110, annular plane 111, sewage discharge channel 120;

[0037] Grinding pad 200, grinding surface 210, clearance space 220, dirt storage tank 230;

[0038] Wafer carrier 300, loading surface 310. Detailed Implementation

[0039] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.

[0040] In the description of this utility model, it should be understood that the directional descriptions, such as up, down, front, back, left, right, etc., indicate the directional or positional relationship based on the directional or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0041] In the description of this utility model, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0042] In the description of this utility model, unless otherwise explicitly defined, terms such as "setting," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this utility model in conjunction with the specific content of the technical solution.

[0043] During wafer fabrication, as different processes such as thin film deposition, exposure, and etching are performed alternately, the edge of the wafer (the edge of a wafer typically refers to the area 1mm to 10mm from the edge of the axial end face of the wafer) is affected. Figure 1 As shown (unless otherwise specified, the same applies below), insufficient processing may result in residual film, which may peel off during subsequent processes, causing wafer defects or equipment contamination. Therefore, wafer edge processing is necessary. Traditional wafer edge processing methods mainly include etching and mechanical polishing. Etching suffers from insufficient precision or high cost. Mechanical polishing, on the other hand, is a global planar polishing process, causing wear in the central area of ​​the wafer during the polishing process, thus reducing wafer quality.

[0044] In view of the above background, this utility model provides a grinding table capable of grinding wafers 1000, and during the grinding process, only the edges 2000 of the wafer are ground. (See reference...) Figures 1 to 3 The grinding table in this embodiment includes a support table 100 and a grinding pad 200.

[0045] The polishing pad 200 is attached to the support platform 100 by means of screws, adhesive, or clips. Taking adhesive as an example, after prolonged use, the damaged polishing pad 200 can be directly peeled off the support platform 100 and replaced with a new one. Alternatively, the adhesive can be heated to reduce its stickiness before removing the damaged polishing pad 200. The side of the polishing pad 200 facing away from the support platform 100 is the polishing surface 210. The polishing surface 210 can be, for example, facing upwards (but is not limited to this; depending on the application, it can also face downwards or horizontally). The polishing pad 200 has a hollow structure so that the polishing surface 210 can be used to polish the axial end face (edge ​​2000) of the wafer.

[0046] Specifically, the polishing pad 200 has a hollow structure, such as a rectangular frame, a triangular frame, or a ring shape, meaning that the central area of ​​the polishing pad 200 has a clearance space 220. Taking a ring shape as an example, the width of the polishing pad 200 (i.e., the difference between the inner and outer diameters) is, for example, 0 to 10 mm. Therefore, during the polishing process of the wafer 1000, the edge 2000 of the wafer can be brought into contact with the polishing surface 210. Exemplarily, during the processing, the wafer 1000 to be polished is adsorbed by the wafer carrier 300, the edge 2000 of the wafer is brought into contact with the polishing surface 210, and the central area 3000 of the wafer is positioned above the clearance space 220 of the polishing pad 200, thereby preventing the central area 3000 of the wafer from contacting the polishing pad 200. Meanwhile, since the polishing surface 210 protrudes from the support stage 100, it can also reduce the risk of the wafer 1000 contacting the support stage 100, thereby reducing the risk of wear in the central area 3000 of the wafer during the polishing process, and improving the quality of the wafer 1000 after polishing.

[0047] Reference Figure 4 Based on the above embodiments, the support stage 100 also has a clearance groove 110, and the polishing pad 200 is arranged around the clearance groove 110. That is, the support stage 100 is recessed in the clearance area corresponding to the center of the polishing pad 200. The clearance groove 110 is, for example, a rectangular groove, a cylindrical groove, or a hemispherical groove. During the polishing process of the wafer 1000, the central region 3000 of the wafer is located above the clearance groove 110, thereby increasing the distance between the wafer 1000 and the support stage 100. This not only reduces the risk of contact and friction between the central region 3000 of the wafer and the support stage 100, but also reduces the risk of splashed polishing particles or residual polishing fluid falling onto the central surface of the wafer 1000 and causing contamination or damage.

[0048] Furthermore, in some embodiments, the polishing pad 200 has a ring-shaped structure. Specifically, the edge 2000 of the wafer is typically a ring-shaped band with a width of 1 mm to 10 mm. In this embodiment, the polishing pad 200 has a ring-shaped structure, which is similar in shape to the edge 2000 of the wafer. This increases the contact area between the wafer 1000 and the polishing pad 200 during the polishing process. This not only improves the polishing efficiency but also reduces the pressure on the wafer 1000, thereby reducing the risk of the wafer 1000 being damaged during the polishing process and further improving the quality of the wafer 1000.

[0049] Reference Figure 5 and Figure 6Based on the above embodiment, the polishing table is configured such that the inner diameter of the polishing pad 200 is smaller than the diameter of the wafer 1000. Therefore, after the wafer 1000 is placed, its edge forms a complete annular contact band that adheres to the polishing pad 200. This full-circumference contact method allows the polishing operation to be performed simultaneously on all parts of the wafer edge 2000. Compared to partial contact polishing, this significantly shortens the polishing time for a single wafer 1000 and significantly improves polishing efficiency. Simultaneously, during the polishing process of the wafer 1000, the complete annular contact band increases the contact area between the wafer 1000 and the polishing pad 200, dispersing the pressure during the polishing process, thereby reducing the risk of the wafer edge 2000 breaking or cracking.

[0050] Reference Figure 5 and Figure 7 In some embodiments, the polishing station includes multiple polishing pads 200 of different sizes, each of which can be individually and detachably connected to the support stage 100. In wafer 1000 manufacturing, there are various wafer 1000 specifications, such as 8-inch and 12-inch wafers. Therefore, to improve the practicality of the polishing station in this embodiment, it includes multiple polishing pads 200 of different sizes. The size difference of the polishing pads 200 mainly lies in the difference in their inner and outer diameters. By equipping multiple polishing pads 200 of different sizes and using detachable connection methods, such as snap-fit ​​connections or bolt connections, the operator can quickly replace the corresponding polishing pad 200 according to the specific diameter and edge polishing requirements of the wafer 1000 to be processed (e.g., ...). Figure 5 Replace the grinding pad 200 in the middle with Figure 7 (Grinding pad 200 in the middle). This allows a single grinding station to meet the processing needs of various wafer 1000 types without the need for separate dedicated equipment for different sizes of wafer 1000, improving the versatility and practicality of the equipment and reducing the equipment investment cost of the production line.

[0051] In some embodiments, the support platform 100 further includes a clearance groove 110. The polishing pad 200 is disposed around the clearance groove 110. The support platform 100 includes a first support portion and multiple second support portions. Each second support portion has a clearance groove 110, and the clearance groove 110 of each second support portion has a different size. Each second support portion can be individually and detachably connected to the first support portion. Specifically, the reason for providing detachable first and second support portions is that the support platform 100 is provided with the clearance groove 110, and the provision of the clearance groove 110 limits the size of the polishing pad 200. Based on this, in this embodiment, in order to achieve the replacement of the polishing pad 200 while having the clearance groove 110, this embodiment sets the support platform 100 as having detachable first and second support portions, wherein multiple second support portions are provided, and the clearance grooves 110 of the multiple second support portions have different diameters, thereby adapting to polishing pads 200 with different inner diameters. It should also be noted that the first support is necessary because the support platform 100 is typically used to connect to a drive mechanism such as a motor to rotate and grind the wafer 1000. The transmission connection between the support platform 100 and the drive mechanism is usually a gear, belt, or coupling, which is cumbersome to disassemble directly. Therefore, in this embodiment, the support platform 100 is configured with a detachable first support and a second support. The first support is connected to the drive mechanism, and the second support is connected via a detachable connection method such as screws or snap-fits. This allows for easier and faster replacement of different grinding pads 200.

[0052] Furthermore, referring to Figure 8 and Figure 9 In some embodiments, the support platform 100 has a clearance groove 110, which is a circular stepped groove. The inner wall of the clearance groove 110 includes multiple annular planes 111, each of which can accommodate at least one grinding pad 200. Specifically, taking an upward-facing grinding surface 210 as an example, the inner wall of the annular stepped clearance groove 110 includes vertically distributed upward-facing annular planes 111 with different diameters. Therefore, when it is necessary to replace grinding pads 200 of different sizes, it is only necessary to install the grinding pad 200 on the corresponding size annular plane 111 (e.g., ...). Figure 8 Replace the grinding pad 200 in the middle with Figure 9 The grinding pad 200 can be replaced without disassembling the support platform 100, which not only simplifies the structure of the support platform 100 but also improves the replacement efficiency of the grinding pad 200.

[0053] Reference Figure 10In some embodiments, the support platform 100 also has a drain channel 120, one end of which is connected to the clearance groove 110, and the other end is located on the outer wall of the support platform 100, such as on the bottom surface or radial side of the support platform 100, so that the polishing fluid located in the clearance groove 110 can be discharged from the clearance groove 110. Exemplarily, the drain channel 120 is located at the bottom of the support platform 100, and the polishing fluid can be discharged under gravity. Alternatively, as in some embodiments, the drain channel 120 is located on the side wall of the support platform 100, and the support platform 100 can be driven to rotate, so that the polishing fluid can be thrown out from the drain channel 120 under centrifugal force. Specifically, during the polishing process of the wafer 1000, the polishing fluid can flow out from the drain channel 120 in a timely manner, thereby continuously carrying away the heat generated during the polishing process, avoiding local overheating that could cause changes in the material properties of the wafer edge 2000 or overheating damage to the polishing pad 200, ensuring the temperature stability of the polishing process, and ensuring the uniformity of the polishing rate. In addition, the grinding fluid can be discharged in a directional manner through the sewage discharge channel 120, which is conducive to the collection and reuse of the grinding fluid and saves grinding costs.

[0054] Reference Figure 11 In some embodiments, the grinding surface 210 has a sludge reservoir 230, the cross-section of which can be V-shaped or U-shaped, etc. The sludge reservoir 230 is used to contain the debris generated during grinding. Specifically, during the grinding process of the wafer edge 2000, a certain amount of wafer 1000 material debris and grinding pad 200 wear particles are generated. If not handled properly, these debris may remain on the surface of the grinding surface 210 and be squeezed between the grinding surface 210 and the wafer edge 2000 during subsequent grinding processes, causing scratches, abrasions and other damage to the wafer edge 2000, affecting the quality of the wafer edge 2000, and may even cause microcracks in the wafer edge 2000, affecting the mechanical strength of the wafer 1000. This embodiment effectively improves this problem. In this embodiment, the slag reservoir 230 on the grinding surface 210 can collect these debris in a timely manner, providing a dedicated storage space and effectively preventing direct friction between the debris and the edge 2000 of the wafer, thus ensuring the grinding accuracy and surface finish of the wafer edge 2000. It should be noted that the reason why the debris can enter the slag reservoir 230 is that the wafer 1000 rotates relative to the grinding pad 200 during the grinding process, and the generated debris will move along with it and fall into the nearby slag reservoir 230.

[0055] Reference Figure 11In some embodiments, the polishing pad 200 has a ring-shaped structure, and the polishing table also includes a drive mechanism, such as a motor. The drive mechanism is connected to the support platform 100 through a transmission structure such as gears, gear sets, belts, or worm gears to drive the support platform 100 to rotate. The slurry tank 230 extends to the radial outer wall of the polishing pad 200. Therefore, during the polishing process, when the support platform 100 drives the polishing pad 200 to rotate, the centrifugal force generated by the rotation will cause the debris in the slurry tank 230 to be quickly thrown towards the radial outer wall of the polishing pad 200 and discharged. At the same time, the polishing fluid can also be quickly removed from the polishing area under the action of centrifugal force. This can accelerate the discharge speed of debris and polishing fluid, not only preventing debris from accumulating in the slurry tank 230 and overflowing back onto the polishing surface 210, thus preventing scratches on the edge 2000 of the wafer, but also allowing the heat from the polishing area to be quickly carried away by the rapid flow of the polishing fluid, further improving heat dissipation efficiency and preventing heat accumulation from affecting the polishing effect and equipment life.

[0056] Reference Figure 11 In some embodiments, the support platform 100 has a clearance groove 110 on the side facing the polishing pad 200, and the polishing pad 200 is disposed around the clearance groove 110. The polishing pad 200 is configured such that the inner diameter of the polishing pad 200 is smaller than the diameter of the wafer 1000, and the polishing pad 200 includes a plurality of sludge reservoirs 230 distributed circumferentially along the polishing pad 200, and the sludge reservoirs 230 extend to the inner wall of the polishing pad 200, that is, the sludge reservoirs 230 communicate with the clearance groove 110. Specifically, during the grinding process, the grinding slurry can be partially retained in the clearance tank 110. As the support platform 100 rotates, the grinding slurry in the clearance tank 110 can enter each sludge storage tank 230 using centrifugal force, rapidly replenishing each sludge storage tank 230 to lubricate and cool the grinding surface 210 and the edge 2000 of the wafer. This prevents increased grinding resistance or temperature rise due to insufficient grinding slurry in certain areas, ensuring the stability and uniformity of the grinding process, and also improving the utilization efficiency of the grinding slurry. Furthermore, it can be understood that when grinding the edge 2000 of the wafer using the grinding table of this embodiment, only one liquid supply nozzle is needed to uniformly lubricate the edge 2000 of the wafer, thus simplifying the equipment structure, reducing the equipment footprint, and lowering costs.

[0057] Reference Figure 12The polishing apparatus according to a second aspect embodiment of the present invention includes a wafer carrier 300 and a polishing table according to a first aspect embodiment. The wafer carrier 300 is located on one side of the polishing table along the normal direction of the polishing surface 210 and is used to load a wafer 1000. At least one of the polishing table and the wafer carrier 300 is rotatable, and the wafer carrier 300 is movable toward the polishing table so that the wafer 1000 is clamped between the wafer carrier 300 and the polishing surface 210. Specifically, in this embodiment, the polishing pad 200 has a hollow structure, that is, the central region of the polishing pad 200 has a clearance space 220, and the polishing surface 210 protrudes from the support table 100. Therefore, during the polishing process of wafer 1000, the edge 2000 of the wafer can be brought into contact with the polishing pad 200, and the central region 3000 of the wafer can be positioned above the clearance space 220 of the polishing pad 200, thereby preventing the central region 3000 of the wafer from contacting the polishing pad 200 or the support stage 100. Thus, during the polishing process, only the edge 2000 of the wafer can be polished, thereby avoiding wear on the central region 3000 of the wafer.

[0058] It should be noted that since this embodiment adopts all the technical features of the first aspect embodiment, this embodiment has all the beneficial effects brought by the first aspect embodiment, which will not be repeated here.

[0059] Reference Figure 12 In some embodiments, the wafer carrier 300 has a loading surface 310 for loading the wafer 1000, and the diameter of the loading surface 310 is not less than the diameter of the wafer 1000. Therefore, when the wafer 1000 is loaded on the wafer carrier 300, the loading surface 310 can provide comprehensive support for the wafer 1000. During the polishing process, the edge 2000 of the wafer is subjected to an upward polishing force from the polishing pad 200, while the loading surface 310 applies a downward pressure to the wafer 1000, so that the edge 2000 of the wafer is in a balanced state where the upper and lower pressures cancel each other out. This reduces the risk of the wafer 1000 bending, deforming, or even breaking due to excessive force on one side, thereby improving the safety, reliability, and quality of the polishing operation.

[0060] In some embodiments, the grinding apparatus further includes a liquid supply system, which includes a nozzle for spraying grinding liquid toward the grinding pad 200.

[0061] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments, and various changes can be made within the scope of knowledge possessed by those skilled in the art without departing from the spirit of the present invention. Furthermore, in the description of the present invention, the reference to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicates that the specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any suitable manner in one or more embodiments or examples.

Claims

1. A grinding table, characterized in that, include: Support platform; A polishing pad is disposed on the support platform. The side of the polishing pad facing away from the support platform is the polishing surface, and the polishing pad is configured as a hollow structure so that the polishing surface can polish the edge of the axial end face of the wafer.

2. The grinding table according to claim 1, characterized in that, The support platform has a clearance groove on the side facing the grinding pad, and the grinding pad is arranged around the clearance groove.

3. The grinding table according to claim 1, characterized in that, The polishing pad has a circular ring structure, and the polishing table is configured such that the inner diameter of the polishing pad is smaller than the diameter of the wafer.

4. The grinding table according to claim 3, characterized in that, The grinding table includes multiple grinding pads of different sizes, each of which can be individually and detachably connected to the support table.

5. The grinding table according to claim 4, characterized in that, The support platform has a clearance groove, which is a circular stepped groove. The inner wall of the clearance groove includes multiple annular planes, and each annular plane can be used to install at least one of the grinding pads.

6. The grinding table according to claim 2, characterized in that, The support platform also has a drainage channel, one end of which is connected to the cavitation groove, and the other end is located on the outer surface of the support platform, so that the grinding fluid located in the cavitation groove can be discharged from the cavitation groove.

7. The grinding table according to any one of claims 1 to 6, characterized in that, The grinding surface is arranged facing upwards, and the grinding surface has a dirt storage tank for holding the debris generated during grinding.

8. The grinding table according to claim 7, characterized in that, The grinding pad has a circular structure, and the grinding table also includes a driving mechanism connected to the support platform for driving the support platform to rotate. The sludge storage tank extends to the radial outer wall of the grinding pad.

9. The grinding table according to claim 8, characterized in that, The support platform has a clearance groove on the side facing the polishing pad, the polishing pad is arranged around the clearance groove, and the polishing platform is configured such that the inner diameter of the polishing pad is smaller than the diameter of the wafer, the polishing pad includes a plurality of sludge storage grooves distributed circumferentially along the polishing pad, and the sludge storage grooves extend to the inner wall of the polishing pad.

10. Grinding equipment, characterized in that, include: The grinding table according to any one of claims 1 to 9; A wafer carrier, located on one side of the polishing table along the normal direction of the polishing surface, is used to load a wafer. At least one of the polishing table and the wafer carrier is rotatable, and the wafer carrier is movable toward the polishing table so that the wafer is clamped between the wafer carrier and the polishing surface.

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