Grinding assembly and grinding apparatus

Abstract

The utility model provides a kind of grinding assembly and grinding equipment, it is related to semiconductor processing technical field, to solve the problem of the utilization rate of equipment decline caused by needing to replace different size workbench when the wafer of multiple sizes is ground.The grinding assembly includes workbench and fixture;The workbench includes the middle part with the whole face having porosity;The fixture is arranged on the middle part of the workbench, and the fixture includes plate-shaped main body and at least one opening;The plate-shaped main body has opposite first surface and second surface, and the first surface and the second surface are perpendicular to the thickness direction of the plate-shaped main body;At least one opening is opened on the first surface, and the opening is configured to accommodate the wafer to be ground, the depth of the opening is less than the thickness of the wafer, and at least part of the area of the opening penetrates the second surface;The grinding assembly is applied to grinding equipment, for accommodating the wafer to be ground.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing technology, and in particular to a grinding component and grinding equipment. Background Technology

[0002] Silicon carbide (SiC), as a third-generation semiconductor, possesses characteristics such as a large bandgap, high thermal conductivity, high electron saturation mobility, and high breakdown electric field. Devices using silicon carbide as a substrate (i.e., SiC wafers) have irreplaceable advantages in high-temperature, high-voltage, high-frequency, and high-power electronic devices, as well as in environmental applications such as new energy, photovoltaics, and aerospace.

[0003] In the processing of SiC wafers, grinding is a core process connecting material preparation and device manufacturing. Its necessity stems from the extreme physical properties of silicon carbide and the atomic-level precision requirements of semiconductor devices. As a third-generation semiconductor material, silicon carbide has a Mohs hardness of up to 9.5 (second only to diamond), its thermal conductivity is three times that of silicon (Si), and it is resistant to high temperatures and corrosion. However, these properties also make silicon carbide one of the most difficult materials to process. After the initial dicing of SiC wafers, a damage layer (including microcracks and lattice distortions) with a depth of 10μm to 20μm is formed on its surface. However, taking a 6-inch diameter SiC wafer as an example, power devices require that the surface roughness of its substrate (i.e., the SiC wafer) be less than 0.2 nm (equivalent to atomic-level flatness), and the thickness uniformity error be less than 3 μm. Therefore, the SiC wafer needs to be polished, that is, through multi-stage precision processing, its subsurface defects are gradually eliminated, thereby reducing the initial roughness of the SiC wafer from the micrometer level to the sub-nanometer level, laying the foundation for subsequent chemical mechanical polishing (CMP).

[0004] During the grinding process, wafers are typically placed on the grinding table of the grinding equipment for grinding. However, when grinding wafers of different sizes, it is usually necessary to change to a different sized table. Due to the cumbersome and time-consuming disassembly and assembly process, the utilization rate of the grinding equipment decreases, reducing production capacity. Utility Model Content

[0005] Embodiments of this utility model provide a grinding component and grinding equipment, aiming to solve the problem of reduced equipment utilization caused by the need to change worktables of different sizes when grinding wafers of various sizes.

[0006] To achieve the above objectives, the embodiments of this utility model adopt the following technical solutions:

[0007] On one hand, a grinding assembly is provided, including a worktable and a fixture. The worktable includes a central portion with holes on its entire surface. The fixture is disposed on the central portion of the worktable, and the fixture includes a plate-like body and at least one opening. The plate-like body has opposing first and second surfaces, wherein the first and second surfaces are perpendicular to the thickness direction of the plate-like body. At least one opening is formed on the first surface, the opening being configured to receive a wafer to be ground, wherein the depth of the opening is less than the thickness of the wafer, and at least a portion of the opening penetrates the second surface.

[0008] In some embodiments, the opening includes a groove and a plurality of through holes disposed at the bottom of the groove.

[0009] In some embodiments, the depth of the groove is D1, the thickness of the wafer is D0, D1 = D0 - (20 to 50) μm; and / or, the thickness of the portion of the plate-like body corresponding to the bottom of the groove is 200 μm to 500 μm.

[0010] In some embodiments, the diameter of any one of the plurality of through holes ranges from 20 μm to 200 μm; and / or, the spacing between two adjacent through holes ranges from 20 μm to 200 μm.

[0011] In some embodiments, the plurality of through holes are arranged on the bottom of the groove in a manner that gradually increases from the periphery of the groove to the center of the groove.

[0012] In some embodiments, the entire area of ​​the opening extends through the second surface.

[0013] In some embodiments, the depth of the opening is D1, and the thickness of the wafer is D0, where D1 = D0 - (20 to 50) μm.

[0014] In some embodiments, the planar dimension of the aperture is a first dimension, and the planar dimension of the wafer is a second dimension, wherein the first dimension is 0.1% to 5% larger than the second dimension.

[0015] In some embodiments, the at least one opening may include a plurality of openings.

[0016] On the other hand, a grinding apparatus is provided, including a grinding assembly as described in any of the above embodiments, and a vacuum control line disposed on the side of the worktable of the grinding assembly away from the fixture.

[0017] It is understood that the beneficial effects of the grinding equipment provided in the above embodiments of this utility model can be referred to the beneficial effects of the grinding components mentioned above, and will not be repeated here. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of this utility model, the accompanying drawings used in some embodiments of this utility model will be briefly introduced below.

[0019] Figure 1 A top view of a worktable structure provided for the prior art;

[0020] Figure 2 for Figure 1 The worktable shown is equipped with a wafer, and then moves along... Figure 1 Schematic diagram of the cross-sectional structure along the AA direction;

[0021] Figure 3 for Figure 1 The workbench shown is used to mount another type of wafer, along... Figure 1 Schematic diagram of the cross-sectional structure along the AA direction;

[0022] Figure 4 A top view of another worktable structure provided by the prior art;

[0023] Figure 5 A top view of another worktable structure provided for the prior art;

[0024] Figure 6 for Figure 5 The diagram shows a top view of the worktable after a small-sized wafer has been mounted on it.

[0025] Figure 7 A top view of a grinding assembly according to some embodiments. Figure 1 ;

[0026] Figure 8 for Figure 7 The grinding assembly shown is along Figure 7 Schematic diagram of the cross-sectional structure in the middle BB direction;

[0027] Figure 9 A top view of a grinding assembly according to some embodiments. Figure 2 ;

[0028] Figure 10 for Figure 9 The grinding assembly shown is along Figure 9 Schematic diagram of the cross-sectional structure in the middle BB direction;

[0029] Figure 11 for Figure 7 or Figure 9 The grinding assembly shown depicts a stage that, after mounting a large wafer, moves along... Figure 7 or Figure 9 Schematic diagram of the cross-sectional structure in the middle BB direction;

[0030] Figure 12 for Figure 7 The grinding assembly shown is used to mount a small-sized wafer and then... Figure 7 Schematic diagram of the cross-sectional structure in the middle BB direction;

[0031] Figure 13 for Figure 9 The grinding assembly shown is used to mount a small-sized wafer and then... Figure 9 Schematic diagram of the cross-sectional structure in the middle BB direction;

[0032] Figure 14 A top view of the fixture according to some embodiments Figure 1 ;

[0033] Figure 15 for Figure 14 The jig shown is along Figure 14 Schematic diagram of the cross-sectional structure in the middle BB direction;

[0034] Figure 16 This is a schematic diagram showing the arrangement of through holes in the openings of a fixture according to some embodiments;

[0035] Figure 17 A top view of the fixture according to some embodiments Figure 2 ;

[0036] Figure 18 for Figure 17 The jig shown is along Figure 17 Schematic diagram of the cross-sectional structure in the middle BB direction;

[0037] Figure 19 A top view of the fixture according to some embodiments Figure 3 ;

[0038] Figure 20 A top view of the fixture according to some embodiments Figure 4 ;

[0039] Figure 21 for Figure 19 or Figure 20 The edge of the fixture shown Figure 19 or Figure 20 Schematic diagram of the cross-sectional structure in the middle BB direction;

[0040] Figure 22 A partial cross-sectional view of a grinding apparatus according to some embodiments. Figure 1 ;

[0041] Figure 23 A partial cross-sectional view of a grinding apparatus according to some embodiments. Figure 2 . Detailed Implementation

[0042] The technical solutions of some embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments provided by this utility model, all other embodiments obtained by those skilled in the art are within the protection scope of this utility model.

[0043] In the description of this utility model, it should be understood that the terms "middle / center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0044] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "exemplary," or "some examples" are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of the present invention. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples. And, the words "exemplary" or "for example," etc., are used herein to indicate example, illustration, or description. Any embodiment or design described herein as "exemplary" or "for example" should not be construed as being more preferred or advantageous than other embodiments or other design options. Specifically, the use of words such as "exemplary" or "for example," etc., is intended to present the relevant concepts in a specific manner. Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, features specified as "first" and "second" may explicitly or implicitly include one or more of those features. In the description of the embodiments of this utility model, unless otherwise stated, "multiple" means two or more.

[0045] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0046] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0047] The use of “applies to” or “configured to” in this article implies an open and inclusive language that does not preclude applicability to or configuration to devices that perform additional tasks or steps.

[0048] In addition, the use of “based on” implies openness and inclusivity, because processes, steps, calculations or other actions “based on” one or more of the stated conditions or values ​​may in practice be based on additional conditions or values ​​beyond those stated.

[0049] As used herein, “about,” “approximately,” or “approximately” includes the stated value and the average value within an acceptable range of deviation from the given value, wherein the acceptable range of deviation is determined by a person skilled in the art taking into account the measurement under discussion and the error associated with the measurement of the given quantity (i.e., the limitations of the measurement system).

[0050] In the present invention, the meanings of “on”, “above”, and “above” should be interpreted in the broadest sense, such that “on” not only means “directly on” something, but also includes “on” something with intermediate features or layers in between, and “above” or “above” not only means “above” or “above” something, but also includes “above” or “above” something without intermediate features or layers in between (i.e., directly on something).

[0051] This document describes exemplary embodiments with reference to cross-sectional views and / or plan views, which are idealized exemplary drawings. In the drawings, the thickness of layers and regions is enlarged for clarity. Therefore, variations in shape relative to the drawings are contemplated due to, for example, manufacturing techniques and / or tolerances. Thus, exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing processes. For example, etched regions shown as rectangular would typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of the regions of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0052] Grinding equipment used for grinding wafers typically consists of a machine tool, spindle, worktable, robotic arm, control system, and vacuum piping system. The structure and function of each part are as follows:

[0053] The machine tool, serving as the main structural support, consists of a base plate, columns, and crossbeams, providing a stable working environment for the entire grinding process. The spindle comprises a grinding disc and a grinding shaft. The grinding disc carries the abrasive and provides the grinding fluid, and rotates to contact the wafer (also known as a wafer) surface for grinding. The grinding shaft controls the rotation speed of the grinding disc, ensuring the stability and efficiency of the grinding process. The worktable, also known as a stage or wafer support, is the wafer processing platform used to hold the wafers to be ground. The robotic arm is responsible for picking up, placing, and transferring the wafers. The control system is used to automate the process and optimize parameters. A vacuum piping system located below the worktable uses perforations to hold the wafers tightly against and adhere them to the worktable surface, preventing them from slipping during grinding.

[0054] Existing technology provides a worktable that can be used by wafers of different sizes. Figure 1 A top view of a worktable structure provided by the prior art. (Example) Figure 1 As shown, the workbench 10 includes a first intermediate portion 101a, a first annular peripheral portion 102a, a second intermediate portion 101b, and a second annular peripheral portion 102b arranged sequentially from the inside out.

[0055] The first intermediate portion 101a and the second intermediate portion 101b are made of porous materials with pores. Vacuum control pipelines are respectively provided below the first intermediate portion 101a and the second intermediate portion 101b (i.e., two sets of vacuum control pipelines constitute a vacuum pipeline system) for providing vacuum adsorption. The first peripheral portion 102a is made of a ring of ceramic material to separate the vacuum adsorption generated by the vacuum control pipelines below the first intermediate portion 101a and the second intermediate portion 101b; the second peripheral portion 102b is also made of a ring of ceramic material to prevent leakage of vacuum adsorption in the area where the second intermediate portion 101b is located.

[0056] The operation process of the above-mentioned worktable 10 will be explained below using two wafer sizes with diameters of 6 inches and 8 inches as examples.

[0057] Figure 2 for Figure 1 The worktable shown is equipped with a wafer, and then moves along... Figure 1 A schematic diagram of the cross-sectional structure along the AA direction. (See diagram below.) Figure 2 As shown, when grinding a small-sized first wafer 201 (e.g., a 6-inch wafer), the first wafer 201 is placed on the first intermediate portion 101a of the worktable 10. The vacuum control pipeline corresponding to the lower part of the first intermediate portion 101a is controlled to perform vacuum adsorption on the first wafer 201, while the vacuum control pipeline corresponding to the lower part of the second intermediate portion 101b is kept closed. Since vacuum adsorption only occurs below the first wafer 201, and there is no vacuum adsorption below the outer periphery of the first wafer 201, no vacuum anomaly will occur.

[0058] Figure 3 for Figure 1 The workbench shown is used to mount another type of wafer, along... Figure 1 A schematic diagram of the cross-sectional structure along the AA direction. (See diagram below.) Figure 3 As shown, when grinding a large-size second wafer 202 (e.g., an 8-inch wafer), the second wafer 202 is placed on the area formed by the first intermediate portion 101a, the first peripheral portion 102a, and the second intermediate portion 101b of the worktable 10. The vacuum control lines corresponding to the first intermediate portion 101a and the second intermediate portion 101b are turned on to perform vacuum adsorption on the second wafer 202.

[0059] However, because a first peripheral portion 102a separates the first intermediate portion 101a and the second intermediate portion 101b, there is no vacuum adsorption below this area; furthermore, the hardness of the ceramic material forming the first peripheral portion 102a differs from the hardness of the porous material forming the two intermediate portions on either side, resulting in inconsistent surface hardness of the worktable. Consequently, the second wafer 202 experiences uneven grinding force during the grinding process, ultimately causing a stepped pattern on the surface of the second wafer facing away from the worktable, corresponding to the first peripheral portion 102a. To remove this stepped pattern, the second wafer 202 requires additional polishing, removing approximately 15μm of surface thickness, resulting in wasted wafer material, increased processing time, and reduced throughput. Furthermore, if the aforementioned worktable is used for double-sided grinding, both sides of the wafer require additional polishing, further reducing throughput.

[0060] To address the aforementioned issues, existing technologies have further provided different work stages to accommodate wafers of different sizes and specifications. Figure 4 A top view of another worktable structure provided by the prior art. Figure 5 A top view schematic diagram of another worktable provided for the prior art. For example... Figure 4 and Figure 5 As shown, the grinding equipment is equipped with two types of worktables, namely worktable 10' and worktable 10".

[0061] like Figure 4 As shown, the worktable 10' includes a central portion 101' and a peripheral portion 102' located around the central portion 101'. The size of the central portion 101' corresponds to that of a small-sized first wafer 201 (e.g., a 6-inch wafer), and it is used to place the first wafer 201. Figure 5As shown, the worktable 10” includes a central portion 101” and a peripheral portion 102 located around the central portion 101”. The size of the central portion 101” corresponds to the size of the large-size second wafer 202 (e.g., an 8-inch wafer) and is used to place the second wafer 202. Here, the materials of the central portion 101” and the central portion 101”, as well as the peripheral portion 102” and the peripheral portion 102”, can be found in the foregoing description of the corresponding structures in the worktable 10, and will not be repeated here.

[0062] When grinding the second wafer 202, a worktable 10 corresponding to the size of the second wafer 202 needs to be installed to avoid the aforementioned step pattern on the surface of the large wafer when grinding with a shared worktable 10.

[0063] If the worktable 10” is still used when grinding the small-sized first wafer 201, abnormal wafer adsorption will occur, affecting the grinding process. Figure 6 for Figure 5 The diagram shows a top view of the worktable with a small-sized wafer mounted on it. (Details are as follows...) Figure 6 As shown, since the size of the first wafer 201 is smaller than the size of the middle part 101” of the stage 10”, the first wafer 201 cannot cover the entire area of ​​the middle part 101”; however, the vacuum pipeline system located below the middle part 101” will generate vacuum adsorption in the entire area where the middle part 101” is located, thereby causing adsorption abnormalities in the area around the first wafer 201 that is not covered by the wafer, affecting the grinding process.

[0064] Therefore, when grinding the first wafer 201, it is necessary to change the worktable and install a worktable 10' that corresponds to the size of the first wafer 201. Since the worktable is connected to the vacuum pipeline system, the disassembly and installation process is cumbersome and time-consuming. Each time the worktable is changed, it takes about one day, resulting in a decrease in the utilization rate of the grinding equipment and a reduction in production capacity.

[0065] Therefore, to address the problem in existing technologies where grinding wafers of various sizes requires changing to different sized worktables, resulting in reduced equipment utilization, embodiments of this utility model provide a grinding assembly. This grinding assembly can meet the processing requirements of wafers of different sizes without requiring the replacement of different worktables, saving time and resources associated with worktable switching.

[0066] Figure 7 A top view of a grinding assembly according to some embodiments. Figure 1 , Figure 8 for Figure 7 The grinding assembly shown is along Figure 7 A schematic diagram of the cross-sectional structure along the BB direction. Figure 9 A top view of a grinding assembly according to some embodiments. Figure 2 , Figure 10 for Figure 9 The grinding assembly shown is along Figure 9 A schematic diagram of the cross-sectional structure along the BB direction.

[0067] like Figures 7 to 10 As shown, the grinding assembly 100 includes a worktable 30 and a fixture 40. The worktable 30 includes a central portion 301 with holes on its entire surface. The fixture 40 is disposed on the central portion 301 of the worktable 30. The fixture 40 includes a plate-like body 401 and at least one opening 402. The plate-like body 401 has opposing first surfaces 401a and second surfaces 401b, wherein the first surfaces 401a and second surfaces 401b are perpendicular to the thickness direction D of the plate-like body 401. At least one opening 402 is formed on the first surface 401a. The opening 402 is configured to accommodate a wafer to be ground, wherein the depth D1 of the opening 402 is less than the thickness D0 of the wafer, and at least a portion of the opening 402 penetrates the second surface 401b.

[0068] The aforementioned wafer, for example, is a small-sized first wafer 201, whose thickness D0 can be referenced. Figure 2 As shown.

[0069] It should be noted that since the jig 40 has at least one opening 402, the planar dimension of the opening 402 should be smaller than the dimensions of the first surface 401a and the second surface 401b of the plate-shaped body 401 of the jig 40. Since the jig 40 is located on the middle portion 301 of the worktable 30, the planar dimension of the middle portion 301 is larger than the planar dimension of the opening 402. In this document, the planar dimension of a structure refers to the dimension (e.g., diameter or width) of the cross-section (generally referred to as the cross section) perpendicular to its thickness or depth direction.

[0070] In this way, the worktable 30 can hold large wafers (e.g., 8-inch wafers) to be ground, and the fixture 40 can hold one or more small wafers (e.g., 6-inch wafers) to be ground.

[0071] Figure 11 for Figure 7 or Figure 9 The grinding assembly shown depicts a stage that, after mounting a large wafer, moves along... Figure 7 or Figure 9 A schematic diagram of the cross-sectional structure along the BB direction. Figure 12 for Figure 7 The grinding assembly shown is used to mount a small-sized wafer and then... Figure 7 A schematic diagram of the cross-sectional structure along the BB direction. Figure 13 for Figure 9 The grinding assembly shown is used to mount a small-sized wafer and then... Figure 9 A schematic diagram of the cross-sectional structure along the BB direction.

[0072] like Figure 11 As shown, when grinding is required on the second wafer 202 (large-size wafer), the worktable 30 can be used alone, and the second wafer 202 can be placed on the central part 301 with pores on the entire surface; as shown Figure 12 or Figure 13 As shown, when the first wafer 201 (a small-sized wafer) needs to be ground, a worktable 30 and a fixture 40 can be used together to place the first wafer 201 in the opening 402 of the fixture 40. Based on this, the grinding assembly 100 provided by the embodiment of this utility model can be compatible with wafers of different sizes and specifications, eliminating the cumbersome operation of changing different worktables, saving the time and losses required for worktable switching, thereby improving the utilization rate of the grinding equipment and increasing production capacity.

[0073] Furthermore, when grinding large-sized wafers, the large wafers are placed on the central portion 301 with pores on the entire surface. The central portion 301 is made of uniform material, preventing step patterns from forming on the wafer surface. When grinding small-sized wafers, the small wafers are housed in the openings 402 of the fixture 40. The plate-like main body 401 around the openings 402 partially covers the pores in the central portion 301 of the worktable 30 below, preventing uncovered areas around the small wafers and thus avoiding vacuum adsorption anomalies. Therefore, when using the grinding assembly 100 provided in this embodiment to grind wafers of different sizes, step patterns or vacuum adsorption anomalies will not form on the wafer surface, ensuring wafer processing quality and further improving production capacity.

[0074] The entire surface of the middle portion 301 has pores, and at least a portion of the opening 402 penetrates the second surface 401b, which allows the vacuum control pipeline under the stage 30 to vacuum adsorb large wafers placed on the middle portion 301 through the pores, or to vacuum adsorb small wafers contained in the opening 402 through the pores and the opening 402.

[0075] The intermediate portion 301 may be made of a porous material, such as porous ceramics, including at least one of porous oxide ceramics, porous carbide ceramics, and porous nitride ceramics.

[0076] On the aforementioned plate-shaped body 401, the area where the opening 402 is located can be referred to as the intermediate region, and the area where the opening 402 is not provided can be referred to as the peripheral region; that is, the peripheral region is located outside the intermediate region. The depth D1 of the opening 402 can be less than or equal to the thickness of the portion of the plate-shaped body 401 corresponding to the peripheral region.

[0077] In other words, when the depth D1 of the opening 402 is less than the thickness of the portion of the plate-shaped body 401 corresponding to the peripheral region, in order to allow the small-sized wafer contained in the opening 402 to be vacuum-adsorbed in the opening 402, a portion of the opening 402 penetrates the second surface 401b; when the depth D1 of the opening 402 is equal to the thickness of the portion of the plate-shaped body 401 corresponding to the peripheral region, the entire area of ​​the opening 402 penetrates the second surface 401b.

[0078] The depth D1 of the opening 402 is less than the thickness D0 of the small wafer housed in the opening 402, so that the surface of the wafer can protrude from the first surface 401a of the plate-shaped body 401 of the fixture 40, and thus be ground for grinding.

[0079] It should be noted that the planar pattern of aperture 402 matches the planar pattern of the small wafer to be ground contained therein.

[0080] When the planar pattern of the small wafer housed in aperture 402 is not a complete circle, but has a straight edge, accordingly, as Figure 7 and Figure 9 As shown, the planar pattern of the opening 402 in the fixture 40 designed for the wafer also has a straight edge L at its edge. If the diameter of the wafer (ignoring the effect of the straight edge on the circular pattern) is Z0, then the straight edge L = 30% to 35% × Z0.

[0081] Taking a small-sized wafer housed in aperture 402 as an example, such as a 6-inch wafer, the diameter Z0 of a 6-inch wafer is typically 150 mm, and the straight edge L = 30% to 35% × Z0. For example, L = 47.5 ± 2.5 mm.

[0082] When the small wafer housed in the opening 402 is a wafer of other shapes, such as a complete circle, the planar pattern of the opening 402 in the fixture 40 designed for that wafer is also a complete circle.

[0083] In some embodiments, to facilitate the robotic arm's handling of wafers through the opening 402, the planar dimensions of the opening 402 should be slightly larger than the planar dimensions of the wafer housed therein. Specifically, the planar dimensions of the opening 402 are a first dimension, and the planar dimensions of the wafer are a second dimension. The first dimension is 0.1% to 5% larger than the second dimension, for example, the first dimension is 0.1%, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, or 5% larger than the second dimension.

[0084] Taking a 6-inch wafer housed in aperture 402 as an example, the diameter Z0 of a 6-inch wafer is typically 150mm, and the diameter Z1 of aperture 402 is Z0 + 0.1% to 5% × Z0.

[0085] In some embodiments, the plate-shaped body 401 of the fixture 40 can be made of a metallic material or an organic material. The metallic material can be stainless steel or blued steel (a material formed by heating or chemically treating steel to create a blue oxide film on its surface); the organic material can be an industrial resin, such as at least one of polyethylene (PE), polypropylene (PP), and polyvinyl chloride (PVC).

[0086] In some embodiments, such as Figures 7 to 10 As shown, the worktable 30 also includes a peripheral portion 302 disposed around the central portion 301. The peripheral portion 302 is composed of a ring of ceramic material to prevent leakage caused by vacuum adsorption in the area where the central portion 301 is located. For a detailed description, please refer to the foregoing description, which will not be repeated here. Here, the ceramic material may include at least one of oxide ceramics, carbide ceramics, and nitride ceramics.

[0087] The following provides two implementations of the opening 402 to more specifically describe the above-mentioned grinding assembly 100 provided in the embodiments of this utility model.

[0088] Figure 14 A top view of the fixture according to some embodiments Figure 1 , Figure 15 for Figure 14 The jig shown is along Figure 14 A schematic diagram of the cross-sectional structure along the BB direction. In one implementation, such as... Figure 14 and Figure 15 As shown, the opening 402 includes a groove 4021 and a plurality of through holes 4022 disposed at the bottom 4021a of the groove 4021. That is, in this case, the depth D1 of the opening 402 is the same as the depth D1 of the groove 4021, and this depth D1 is less than the thickness of the portion of the plate-shaped body 401 corresponding to the peripheral area.

[0089] In some embodiments, the thickness of the small-sized wafer housed in the opening 402 is D0, and the depth of the groove 4021 is D1 = D0 - (20 to 50) μm, for example, D1 = D0 - 20 μm, or D1 = D0 - 30 μm, or D1 = D0 - 40 μm, or D1 = D0 - 50 μm. This appropriately exposes the upper surface of the wafer to be ground and a portion near the upper surface 401a to facilitate grinding.

[0090] Taking a 6-inch wafer housed in the opening 402 as an example, the thickness of a 6-inch wafer is typically 350μm, and the depth D1 of the groove 4021 can be 300μm.

[0091] In some embodiments, the thickness of the plate-like body 401 of the fixture 40 corresponding to the bottom of the trench 4021a is 200 μm to 500 μm, which is equal to the depth of the through-hole 4022 described above. This thickness range allows the portion of the plate-like body 401 corresponding to the bottom of the trench 4021a to have appropriate strength and facilitate vacuum adsorption, avoiding deformation of the plate-like body 401 during vacuum adsorption due to insufficient thickness, or unfavorable vacuum adsorption of small-sized wafers housed in the opening 402 due to excessive thickness. For example, the thickness can be 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, or 500 μm.

[0092] Taking a 6-inch wafer housed in the opening 402 as an example, the overall thickness of the plate-shaped body 401 can be 300 + 200 = 500 μm, and the depth D1 of the groove 4021 of the opening 402 can be 300 μm.

[0093] In some embodiments, the aperture of any one of the plurality of through holes 4022 is in the range of 20μm to 200μm. This range of values ​​allows the small wafer housed in the opening 402 to be more tightly adsorbed on the bottom 4021a of the groove 4021, avoiding the weakening of the vacuum adsorption effect due to the aperture value being too large, or the increase in the difficulty of manufacturing the fixture 40 due to the aperture value being too small.

[0094] It should be noted that, for ease of manufacturing, the multiple through holes 4022 are multiple cylindrical holes. The cross-section of the cylindrical hole can be circular, approximately circular, or elliptical; this embodiment of the present invention does not limit this. In this case, the aforementioned "hole diameter" refers to the diameter of the cross-section of the cylindrical hole. Of course, the through holes 4022 can also be square or polygonal cylindrical holes; this embodiment of the present invention does not limit this. In this case, the aforementioned "hole diameter" refers to the side length or average width of the cross-section of the square or polygonal cylindrical hole.

[0095] In some embodiments, the spacing between two adjacent through holes 4022 ranges from 20 μm to 200 μm. This range allows small wafers housed in the openings 402 to be more tightly adsorbed onto the bottom 4021a of the grooves 4021, avoiding weakening the vacuum adsorption effect due to excessively large aperture values ​​(i.e., the through holes 4022 are too sparsely distributed), or increasing the difficulty of manufacturing the fixture 40 due to excessively small aperture values ​​(i.e., the through holes 4022 are too densely distributed).

[0096] In some embodiments, the spacing between any two adjacent through holes 4022 is equal to further improve the vacuum adsorption effect.

[0097] In some embodiments, a plurality of through holes 4022 are arranged on the bottom of the groove 4021a in a manner that gradually increases from the periphery of the bottom of the groove 4021a toward the center of the bottom of the groove 4021a, so as to facilitate structural design and manufacturing.

[0098] For example, Figure 16 This is a schematic diagram illustrating the arrangement of through holes in the openings of a fixture according to some embodiments. For example... Figure 16 As shown, multiple through holes 4022 are arranged on the bottom of the groove 4021a, gradually increasing in number from the periphery of the bottom of the groove 4021a towards its center. Each row of through holes 4022 is staggered with adjacent rows, meaning that each through hole 4022 in each row corresponds to the area between two adjacent through holes 4022 in the preceding row, arranged in a hexagonal (or regular hexagonal) pattern (e.g.,...). Figure 16 (As shown in the dashed line figure).

[0099] Figure 17 A top view of the fixture according to some embodiments Figure 2 , Figure 18 for Figure 17 The jig shown is along Figure 17 A schematic diagram of the cross-sectional structure along the BB direction. In another implementation, such as... Figure 17 and Figure 18 As shown, the entire area of ​​the opening 402 penetrates the second surface 401b. In this case, the opening 402 is either an opening that is open at both ends or a large through hole. That is, the middle area where the opening 402 is located is an opening area that penetrates the first surface 401a and the second surface 401b. The depth D1 of the opening 402 is equal to the thickness of the plate-shaped body 401 of the fixture 40.

[0100] In some embodiments, the thickness of the small-sized wafer housed in the opening 402 is D0, and the depth of the opening 402 is D1 = D0 - (20 to 50) μm, for example, D1 = D0 - 20 μm, or D1 = D0 - 30 μm, or D1 = D0 - 40 μm, or D1 = D0 - 50 μm. This appropriately exposes the upper surface of the wafer to be ground and a portion near the upper surface 401a to facilitate grinding.

[0101] Taking a 6-inch wafer as an example, which is a small wafer housed in the aperture 402, the thickness of a 6-inch wafer is typically 350μm, and the depth D1 of the aperture 402 can be 300μm.

[0102] In some embodiments, there may be multiple openings 402 on the first surface 401a of the plate-shaped body 401 of the fixture 40. The specific number may be determined according to production capacity or related design. The embodiments of this utility model do not limit this.

[0103] Figure 19 A top view of the fixture according to some embodiments Figure 3 , Figure 20 A top view of the fixture according to some embodiments Figure 4 , Figure 21 for Figure 19 or Figure 20 The edge of the fixture shown Figure 19 or Figure 20 A schematic diagram of the cross-sectional structure along the BB direction. (See attached diagram.) Figures 19 to 21 As shown, in the above-mentioned grinding assembly 100 provided in the embodiment of this utility model, the opening 402 for accommodating the wafer to be ground can be two or four, that is to say, the fixture 40 can accommodate two or four small-sized wafers to be ground.

[0104] here, Figures 19 to 21 The explanation will only take the example of an opening 402 that includes a groove 4021 and multiple through holes 4022 disposed at the bottom 4021a of the groove 4021. The opening 402 can also be a reference. Figure 17 The structure shown, i.e., its entire area extends through the second surface 401b, thereby forming an open opening at the top and bottom or a large through hole, is not limited in this embodiment of the present invention.

[0105] In some embodiments, the planar dimensions of the plurality of openings 402 are exactly the same, or the planar dimensions of the plurality of openings 402 are not exactly the same, or the planar dimensions of the plurality of openings 402 are completely different.

[0106] For example, taking wafer sizes of 2 inches, 3 inches, 4 inches, 5 inches, and 6 inches as examples, in the case where the planar dimensions of multiple apertures 402 are exactly the same (e.g. Figure 19 and Figure 20 As shown, the small-sized wafers to be ground accommodated by the multiple openings 402 can be selected from any of the aforementioned size specifications. When the planar dimensions of the multiple openings 402 are not entirely the same, wafers of various sizes can be selected. When the planar dimensions of the openings 402 are completely different, the size specifications of the small-sized wafers to be ground accommodated by the different openings 402 will differ. Specific configurations can be determined based on production capacity or related design, and the embodiments of this utility model do not limit this. Correspondingly, the size of the opening 402 also corresponds to the corresponding size specification of the wafer to be ground that it accommodates; for a detailed description, please refer to the foregoing description, which will not be repeated here.

[0107] This utility model embodiment also provides a grinding device. Figure 22 A partial cross-sectional view of a grinding apparatus according to some embodiments. Figure 1 , Figure 23 A partial cross-sectional view of a grinding apparatus according to some embodiments. Figure 2 .like Figure 22 or Figure 23 As shown, the grinding equipment 1000 includes the grinding assembly 100 described in any of the above embodiments, and a vacuum control line 500 disposed on the side of the worktable 30 of the grinding assembly 100 away from the fixture 40. The vacuum control line 500 is configured to adsorb wafers through the pores and openings 402 of the middle portion 301 of the worktable 30.

[0108] It should be understood that, Figure 22 and Figure 23 The diagram only shows the location of the vacuum control pipeline 500; its specific structure can follow existing technology, and the embodiments of this utility model do not limit it. Furthermore, for clarity, the machine tool, spindle, robotic arm, control system, and other components of the grinding equipment 1000 are not shown in the diagram. The specific functions of the vacuum control pipeline 500 and the aforementioned components can be found in the foregoing description, and will not be repeated here.

[0109] It is understood that the beneficial effects of the grinding equipment provided in the above embodiments of this utility model can be referred to the beneficial effects of the grinding components mentioned above, and will not be repeated here.

[0110] The above description is merely a specific embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this utility model should be included within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the protection scope of the claims.

Claims

1. A grinding assembly, characterized in that, include: A workbench, the workbench including a central section with holes on its entire surface; as well as, A fixture disposed on the middle portion of the workbench, the fixture comprising: A plate-shaped body having opposing first and second surfaces, wherein the first and second surfaces are perpendicular to the thickness direction of the plate-shaped body; and, At least one opening is formed on the first surface, the opening being configured to receive a wafer to be ground, wherein the depth of the opening is less than the thickness of the wafer, and at least a portion of the opening penetrates the second surface.

2. The grinding assembly according to claim 1, characterized in that, The opening includes a groove and a plurality of through holes disposed at the bottom of the groove.

3. The grinding assembly according to claim 2, characterized in that, The depth of the groove is D1, the thickness of the wafer is D0, and D1 = D0 - (20 to 50) μm; and / or, The thickness of the plate-shaped body corresponding to the portion at the bottom of the groove is 200 μm to 500 μm.

4. The grinding assembly according to claim 2, characterized in that, Of the plurality of through holes, the diameter of any one of the through holes ranges from 20 μm to 200 μm; and / or, The spacing between two adjacent through holes ranges from 20 μm to 200 μm.

5. The grinding assembly according to claim 2, characterized in that, The plurality of through holes are arranged on the bottom of the groove in a manner that gradually increases from the periphery of the groove bottom towards the center of the groove bottom.

6. The grinding assembly according to claim 1, characterized in that, The entire area of ​​the opening penetrates the second surface.

7. The grinding assembly according to claim 6, characterized in that, The depth of the opening is D1, and the thickness of the wafer is D0, where D1 = D0 - (20 to 50) μm.

8. The grinding assembly according to claim 1, characterized in that, The planar dimension of the opening is a first dimension, and the planar dimension of the wafer is a second dimension, wherein the first dimension is 0.1% to 5% larger than the second dimension.

9. The grinding assembly according to any one of claims 1 to 8, characterized in that, The at least one opening includes multiple openings.

10. A grinding apparatus, characterized in that, include: The grinding assembly as described in any one of claims 1 to 9; as well as, Vacuum control lines are provided on the side of the worktable of the grinding assembly away from the fixture.

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