LPCVD apparatus and equipment for manufacturing topcon cells

Abstract

The utility model relates to a kind of LPCVD device and equipment for preparing TOPCON battery.LPCVD device includes furnace body, bearing mechanism and gas supply mechanism, furnace body has first end and second end;Bearing mechanism is arranged in furnace body for carrying silicon wafer;Gas supply mechanism, including end portion gas supply assembly and middle portion gas supply assembly, end portion gas supply assembly is arranged on first end, one end of middle portion gas supply assembly is arranged on second end, the other end extends to the middle portion of furnace body, two middle portion gas supply assemblies are respectively arranged on the two sides of bearing mechanism, middle portion gas supply assembly includes the first gas supply pipe and second gas supply pipe distributed in the two sides of bearing mechanism, the end portion of first, second gas supply pipe away from second end has first, second gas supply port respectively, in the length direction of furnace body, first gas supply port is located between first end and second gas supply port.The LPCVD device can improve the film thickness concentration and film thickness uniformity of the passivation contact film layer of silicon wafer and reduce the doping concentration fluctuation of the passivation contact film layer of silicon wafer.

Description

Technical Field

[0001] This utility model relates to the field of TOPCON battery technology, and in particular to an LPCVD apparatus and equipment for preparing TOPCON batteries. Background Technology

[0002] In the fabrication of TOPCON solar cells (tunneling oxide passivated contact cells) using LPCVD (low-pressure chemical vapor deposition) technology, a passivation contact structure (passivation contact film) is deposited on the silicon wafer within the LPCVD apparatus. This passivation contact structure comprises a tunneling oxide layer (SiO2) + a polycrystalline silicon (poly-Si) layer / doped amorphous silicon layer. An LPCVD apparatus typically includes a furnace body, a support mechanism within the furnace body for supporting the silicon wafer, and a gas supply mechanism for supplying reactive gases to the furnace body. The support mechanism includes multiple small boats for supporting the silicon wafer, spaced apart along the length of the furnace body. In practical applications, issues such as poor film thickness concentration (film thickness differences between boats), uneven film thickness on the same silicon wafer (especially the difference in film thickness between the center and edge of the wafer), and fluctuations in doping concentration (affecting carrier transport and contact resistance) have been observed, leading to decreased passivation effectiveness, increased contact resistance, and ultimately impacting cell efficiency and yield. Utility Model Content

[0003] Therefore, it is necessary to provide an LPCVD apparatus that can improve the thickness concentration and uniformity of the passivation contact film layer of silicon wafers and reduce the doping concentration fluctuation of the passivation contact film layer of silicon wafers.

[0004] This utility model provides an LPCVD apparatus, comprising:

[0005] The furnace body has a first end and a second end located along its length.

[0006] A support mechanism, located inside the furnace, is used to support silicon wafers; and

[0007] The gas supply mechanism includes an end gas supply component and a middle gas supply component. The end gas supply component is disposed on the first end. One end of the middle gas supply component is disposed on the second end, and the other end extends to the middle of the furnace body. There are two middle gas supply components, which are respectively disposed on both sides of the supporting mechanism. Each middle gas supply component includes a first gas supply pipe and a second gas supply pipe extending along the length direction of the furnace body. In the arrangement direction of the two middle gas supply components, the first gas supply pipe is closer to the supporting mechanism than the second gas supply pipe. The ends of the first gas supply pipe and the second gas supply pipe away from the second end have a first gas supply port and a second gas supply port, respectively. In the length direction of the furnace body, the first gas supply port is located between the first end and the second gas supply port.

[0008] In one embodiment, there is a height difference between the first gas supply pipe and the second gas supply pipe in the height direction of the furnace body; and / or

[0009] The end air supply assembly has multiple air outlets, which are arranged in a ring at intervals; and / or

[0010] It also includes an exhaust mechanism located on the second end.

[0011] In one embodiment, the sidewall of the first air supply pipe has a replenishment area, which is located between the first air supply port and the second air supply port, and the replenishment area has a replenishment hole.

[0012] In one embodiment, the air replenishment zone is located on the side of the first air supply pipe away from the support mechanism; and / or

[0013] The inner diameter of both the first and second air supply pipes is 8.-8.8 mm, and the diameter of the air replenishment hole is 1.8-2.2 mm.

[0014] In one embodiment, the air replenishment area is located on the side of the first air supply pipe away from the support mechanism, and an installation mark is provided on the outer wall of the first air supply pipe near the second end, the installation mark being located on the same side as the air replenishment area.

[0015] In one embodiment, the air replenishment zone has two air replenishment holes arranged in a figure-eight pattern.

[0016] In one embodiment, the supporting mechanism includes a plurality of small boats for carrying silicon wafers. The plurality of small boats are disposed in the furnace body and arranged at intervals along the length of the furnace body. The first gas supply port and the second gas supply port are both located between two adjacent small boats. The number of gas replenishment zones is less than or equal to the number of small boats between the first gas supply port and the second gas supply port. Each gas replenishment zone is provided corresponding to one small boat.

[0017] In one embodiment, the number of boats is 10, which are arranged in sequence as boat 1, boat 2, boat 3, boat 4, boat 5, boat 6, boat 7, boat 8, boat 9 and boat 10, with boat 1 being closest to the first end and boat 10 being closest to the second end.

[0018] The first air supply port is located between boat No. 3 and boat No. 4, the second air supply port is located between boat No. 7 and boat No. 8, and there are three air replenishment zones, which are respectively set up corresponding to boat No. 5, boat No. 6 and boat No. 7.

[0019] In one embodiment, the supporting mechanism includes 10 small boats for carrying silicon wafers. The 10 small boats are disposed in the furnace body and arranged at intervals along the length of the furnace body. The 10 small boats are arranged sequentially as boat 1, boat 2, boat 3, boat 4, boat 5, boat 6, boat 7, boat 8, boat 9, and boat 10. Boat 1 is closest to the first end, and boat 10 is closest to the second end.

[0020] The first air supply port is located between boat No. 3 and boat No. 4, and the second air supply port is located between boat No. 7 and boat No. 8; or

[0021] The first air supply port is located between boats No. 3 and No. 4, and the second air supply port is located between boats No. 7 and No. 8. Two air replenishment zones are provided on the side of the first air supply pipe away from the supporting mechanism: one air replenishment zone is located between boats No. 5 and No. 6, and the other air replenishment zone is located between boats No. 6 and No. 7. Each air replenishment zone has an air replenishment hole; or

[0022] The first air supply port is located between boat No. 3 and boat No. 4, and the second air supply port is located between boat No. 6 and boat No. 7.

[0023] This invention also provides an apparatus for preparing TOPCON batteries, including the aforementioned LPCVD apparatus.

[0024] In the aforementioned LPCVD apparatus, the end gas supply assembly can adjust the concentration of the reactive gas in the region near the first end of the furnace body, the first gas supply pipe of the two middle gas supply assemblies can adjust the concentration of the reactive gas in the middle section of the furnace body, and the second gas supply pipe of the two middle gas supply assemblies can adjust the concentration of the reactive gas in the region near the second end of the furnace body. This allows the concentration of the reactive gas in each region of the furnace body to be relatively uniform with small differences. Consequently, the silicon wafers placed in each region of the furnace body by the support mechanism are under a relatively uniform concentration of reactive gas, resulting in a relatively uniform thickness of the passivation contact structure (passivation contact film layer) formed on each silicon wafer. This can improve the film thickness concentration and uniformity of the passivation contact film layer on the silicon wafer, as well as reduce the doping concentration fluctuation of the passivation contact film layer on the silicon wafer, resulting in a passivation effect with small film color differences, good doping uniformity, and low contact resistance. Attached Figure Description

[0025] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiments below. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0026] Figure 1 This is a schematic diagram of the structure of an LPCVD device according to an embodiment of the present invention;

[0027] Figure 2 This is a schematic diagram of the LPCVD apparatus according to another embodiment of the present invention;

[0028] Figure 3 for Figure 2 The diagram shown is an overall view of the LPCVD device, including the airflow direction.

[0029] Figure 4 This is a schematic diagram of the LPCVD apparatus according to another embodiment of the present invention;

[0030] Figure 5 This is a schematic diagram of the LPCVD apparatus according to another embodiment of the present invention;

[0031] Figure 6 This is a schematic diagram of the structure of the first air supply pipe in Embodiment 4 of this utility model;

[0032] Figure 7 The images show the film thickness distribution radar diagrams for Embodiments 1 and 4 of this utility model. Detailed Implementation

[0033] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0034] In the description of this application, it should be understood that, where they appear, the terms “center,” “longitudinal,” “lateral,” “length,” “width,” “thickness,” “upper,” “lower,” “front,” “rear,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” “outer,” “clockwise,” “counterclockwise,” “axial,” “radial,” and “circumferential” indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0035] Furthermore, where applicable, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0036] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," "fixing," etc., shall be interpreted broadly. For example, they may refer to a fixed connection, a detachable connection, or an integral part; they may refer to a mechanical connection or an electrical connection; they may refer to a direct connection or an indirect connection through an intermediate medium; they may refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0037] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0038] It should be noted that, if an element is described as "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is described as "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0039] like Figures 1-3 As shown, this is an LPCVD apparatus 10 according to an embodiment of the present invention. This LPCVD apparatus 10 is used in an apparatus for preparing TOPCON batteries and is part of the apparatus for preparing TOPCON batteries.

[0040] In this embodiment, the LPCVD apparatus 10 includes a furnace body 200, a support mechanism 300, and a gas supply mechanism 400.

[0041] The furnace body 200 has a first end 210 and a second end 220 located in the length direction. Specifically, in this embodiment, the first end 210 is the furnace opening of the furnace body 200, and the second end 220 is the furnace tail of the furnace body 200.

[0042] A support mechanism 300 is disposed within the furnace body 200 and is used to support silicon wafers. Specifically, in this embodiment, the support mechanism 300 includes a plurality of small boats for supporting silicon wafers. The plurality of small boats are disposed within the furnace body 200 and arranged at intervals along the length of the furnace body 200.

[0043] The gas supply mechanism 400 includes an end gas supply assembly 410 and a middle gas supply assembly 420. The end gas supply assembly 410 is disposed on the first end 210. Specifically, in this embodiment, the end gas supply assembly 410 has a plurality of gas outlets 410a, which are arranged in a ring at intervals. One end of the middle gas supply assembly 420 is disposed on the second end 220, and the other end extends to the middle of the furnace body 200 (between the first end 210 and the second end 220). There are two middle gas supply assemblies 420. The two middle gas supply assemblies 420 are respectively disposed on both sides of the support mechanism 300. The middle gas supply assembly 420 includes a first gas supply pipe 422 and a second gas supply pipe 424 extending along the length direction of the furnace body 200. In the arrangement direction of the two middle gas supply assemblies 420, the first gas supply pipe 422 is closer to the support mechanism 300 than the second gas supply pipe 424. The ends of the first gas supply pipe 422 and the second gas supply pipe 424 furthest from the second end 220 have a first gas supply port 422a and a second gas supply port 424a, respectively. That is, the ends of the first gas supply pipe 422 and the second gas supply pipe 424 are open structures, not closed structures. In the length direction of the furnace body 200, the first gas supply port 422a is located between the first end 210 and the second gas supply port 424a. That is, if calculated from the second end 220, the length of the first gas supply pipe 422 is greater than the length of the second gas supply pipe 424. The first gas supply pipe 422 can be considered as a long gas supply pipe, and the second gas supply pipe 424 can be considered as a short gas supply pipe.

[0044] In the aforementioned LPCVD apparatus 10, the end gas supply assembly 410 can adjust the concentration of the reaction gas in the region of the furnace body 200 near the first end 210, the first gas supply pipe 422 of the two middle gas supply assemblies 420 can adjust the concentration of the reaction gas in the middle section of the furnace body 200, and the second gas supply pipe 424 of the two middle gas supply assemblies 420 can adjust the concentration of the reaction gas in the region of the furnace body 200 near the second end 220. This allows the concentration of the reaction gas in each region of the furnace body 200 to be relatively uniform with small differences. Consequently, the silicon wafers placed in each region of the furnace body 200 by the support mechanism 300 are under a relatively uniform concentration of reaction gas, resulting in a relatively uniform thickness of the passivation contact structure (passivation contact film layer) formed on each silicon wafer. This can improve the film thickness concentration and uniformity of the passivation contact film layer of the silicon wafer, as well as reduce the doping concentration fluctuation of the passivation contact film layer of the silicon wafer, resulting in a small film color difference, good doping uniformity, passivation effect, and contact resistance.

[0045] In this embodiment, there is a height difference between the first gas supply pipe 422 and the second gas supply pipe 424 along the height direction of the furnace body 200. This is more conducive to the relatively uniform concentration of the reaction gas in each area of ​​the furnace body 200, with less difference. It can be understood that in other embodiments, the first gas supply pipe 422 and the second gas supply pipe 424 may also be set at the same height along the height direction of the furnace body 200.

[0046] In this embodiment, the LPCVD apparatus 10 further includes an exhaust mechanism 500 disposed on the second end 220. This facilitates the discharge of reaction gases from the furnace body 200. It is understood that in other embodiments, the reaction gases from the furnace body 200 can be extracted by the gas supply mechanism 400, in which case the exhaust mechanism 500 can be omitted.

[0047] In this embodiment, as Figure 2 and Figure 3 As shown, the sidewall of the first gas supply pipe 422 has a gas replenishment area 422b, which is located between the first gas supply port 422a and the second gas supply port 424a. The gas replenishment area 422b has gas replenishment holes. The gas replenishment area 422b can increase the concentration of reactive gas on the silicon wafer between the first gas supply port 422a and the second gas supply port 424a, thereby increasing the film thickness on the silicon wafer between the first gas supply port 422a and the second gas supply port 424a and improving the situation where the film thickness on the silicon wafer between the first gas supply port 422a and the second gas supply port 424a is thin due to the low concentration of reactive gas.

[0048] In this embodiment, the gas replenishment area 422b is located on the side of the first gas supply pipe 422 away from the support mechanism 300. This prevents the reactive gas blown from the gas replenishment area 422b from directly blowing onto the silicon wafer on the support mechanism 300, thus avoiding any adverse effect on the film thickness of the silicon wafer. It is understood that in other embodiments, the gas replenishment area 422b may also be located above or below the first gas supply pipe 422.

[0049] In this embodiment, the gas replenishment zone 422b has two gas replenishment holes arranged in a figure-eight pattern. This facilitates a more uniform concentration of the reactant gas in each area of ​​the furnace body 200, minimizing differences. It should be noted that if the gas replenishment zone 422b has only one gas replenishment hole, the central axis of the hole is generally parallel to the horizontal plane. However, when the gas replenishment zone 422b has two gas replenishment holes arranged in a figure-eight pattern, the central axis of one hole tilts upwards, and the central axis of the other hole tilts downwards, with the two central axes forming an angle. The horizontal plane can be the bisector of this angle.

[0050] In this embodiment, an installation mark is provided on the outer wall of the first air supply pipe 422 near the second end 220, and the installation mark is located on the same side as the air replenishment area 422b. This facilitates the identification of the location of the air replenishment area 422b during installation.

[0051] In this embodiment, the inner diameter of both the first air supply pipe 422 and the second air supply pipe 424 is 8.2-8.8 mm. The diameter of the air replenishment hole is 1.8-2.2 mm. This not only facilitates air replenishment but also reduces the adverse impact of the air replenishment hole on the service life of the air supply pipe.

[0052] In this embodiment, both the first gas supply port 422a and the second gas supply port 424a are located between two adjacent small boats. The number of gas replenishment zones 422b is less than or equal to the number of small boats between the first gas supply port 422a and the second gas supply port 424a. Each gas replenishment zone 422b is correspondingly set with one small boat. This makes it easier to achieve a relatively uniform concentration of reactant gases in each region of the furnace body 200, with minimal differences.

[0053] In this embodiment, the reactant gas is SiH4. In other embodiments, the reactant gas can also be various reactant gases such as POCl3, BCl3, and PH3.

[0054] In this embodiment, the supporting mechanism 300 includes 10 small boats for supporting silicon wafers. The 10 small boats are disposed within the furnace body 200 and arranged at intervals along the length of the furnace body 200. The 10 small boats are, in sequence, boat 1, boat 2, boat 3, boat 4, boat 5, boat 6, boat 7, boat 8, boat 9, and boat 10. Boat 1 is closest to the first end 210, and boat 10 is closest to the second end 220.

[0055] like Figure 1 As shown, in some embodiments, the first gas supply port 422a is located between boats 3 and 4, and the second gas supply port 424a is located between boats 7 and 8. According to Table 1 of Embodiment 1, the furnace uniformity of film thickness is 5.02%, indicating good furnace uniformity. However, the film thickness on the silicon wafers in boats 5 and 6 is significantly thinner.

[0056] In order to solve Figure 1 The problems described above in the illustrated embodiments, in some embodiments, such as Figure 4 As shown, without changing the positions of the first gas supply port 422a and the second gas supply port 424a (i.e., the first gas supply port 422a is located between boats 3 and 4, and the second gas supply port 424a is located between boats 7 and 8), two gas replenishment zones 422b are provided on the side of the first gas supply pipe 422 away from the support mechanism 300. One gas replenishment zone 422b is located between boats 5 and 6, and the other gas replenishment zone 422b is located between boats 6 and 7. Each gas replenishment zone 422b has a gas replenishment hole. By increasing the gas replenishment zone 422b, the concentration of the reactive gas in boats 5 and 6 is increased, thereby increasing the film thickness of the silicon wafers on boats 5 and 6 and improving the situation where the film thickness on boats 5 and 6 is thin due to the low concentration of reactive gas. According to Table 2 of Example 2, the furnace uniformity of film thickness is 3.22%, which indicates good furnace uniformity. However, the uniformity of the film thickness inside the furnace is still somewhat high.

[0057] In order to solve Figure 1 The problems described above in the illustrated embodiments, in some embodiments, such as Figure 5 As shown, without changing the first gas supply port 422a, the position of the second gas supply port 424a is changed. Specifically, the first gas supply port 422a is located between boats 3 and 4, and the second gas supply port 424a is located between boats 6 and 7. By bringing the second gas supply port 424a closer to boats 5 and 6, the concentration of the reactive gas in boats 5 and 6 is increased, thereby increasing the film thickness of the silicon wafers on boats 5 and 6 and improving the situation where the film thickness on the silicon wafers on boats 5 and 6 is thin due to the lower concentration of reactive gas. According to Table 3 of Example 3, the furnace uniformity of film thickness is 2.28%, which is relatively good. However, the film thickness of the silicon wafer on boat 9 is slightly thinner.

[0058] In order to solve Figure 1 The problems described above in the illustrated embodiments, in some embodiments, such as Figure 2 and Figure 3As shown, the first air supply port 422a is located between boats 3 and 4. The second air supply port 424a is located between boats 7 and 8. There are three air replenishment zones 422b, which are respectively set up to correspond to boats 5, 6, and 7. According to Table 4 of Example 4, the furnace uniformity of the film thickness is 1.30%, indicating good furnace uniformity.

[0059] Example 1

[0060] The silicon wafer is model 182N.

[0061] The LPCVD unit uses a furnace body compatible with Laplace's LPCVD machines. All 10 boats are Kärcher 182 boats, each capable of holding 240 silicon wafers. The end gas supply assembly is located at the furnace opening, and the middle gas supply assembly is located at the furnace tail. Specifically, the first gas supply pipe is 230cm long with an inner diameter of 8.5mm, and the first gas supply port also has an inner diameter of 8.5mm. The second gas supply pipe is 140cm long with an inner diameter of 8.5mm, and the second gas supply port also has an inner diameter of 8.5mm. The first gas supply port is located between boats 3 and 4 (specifically at 230cm), and the second gas supply port is located between boats 7 and 8 (specifically at 140cm).

[0062] A tunneling oxide layer and a polycrystalline silicon layer are prepared by a process involving boat loading, heating, oxidation, vacuuming, heating, silane deposition, vacuuming, cooling, and boat unloading. In the silane deposition step, the process temperature is 613-617℃, the process time is 1520s, the pressure is 240mTorr, and the flow rates of the reactive gas (SiH4) are: 330 sccm for the front silane (controlled by the end gas supply assembly), 750 sccm for the middle silane (controlled by the first gas supply pipe), and 630 sccm for the rear silane (controlled by the second gas supply pipe).

[0063] The data in Table 1 below are obtained. The data for each boat is obtained by testing with an online film thickness tester. The mean value is calculated by averaging the data of 10 boats. The uniformity in the furnace is calculated by the formula for the uniformity of 10 boats: Furnace uniformity = (maximum value - minimum value) / (maximum value + minimum value).

[0064] Table 1

[0065]

[0066] Example 2

[0067] Example 2 improves upon the central air supply assembly of Example 1. The first air supply port is located between boats 3 and 4 (specifically at 230 cm), and the second air supply port is located between boats 7 and 8 (specifically at 140 cm). Two air replenishment zones are set on the side of the first air supply pipe furthest from the supporting mechanism: one between boats 5 and 6 (specifically at 190 cm), and the other between boats 6 and 7 (specifically at 170 cm). Each air replenishment zone has a 2 mm diameter air inlet. All other conditions are the same as in Example 1. Table 2 below is obtained.

[0068] Table 2

[0069]

[0070] Example 3

[0071] Example 3 improves upon the central air supply assembly of Example 1. Specifically, the first air supply port is located between boats 3 and 4 (at a distance of 230 cm), and the second air supply port is located between boats 6 and 7 (at a distance of 160 cm). All other conditions remain the same as in Example 1. The results are shown in Table 3 below.

[0072] Table 3

[0073]

[0074]

[0075] Example 4

[0076] Example 4 improves upon the central air supply assembly of Example 1. The first air supply port is located between boats 3 and 4 (specifically at 230cm), and the second air supply port is located between boats 7 and 8 (specifically at 140cm). Three air replenishment zones are set on the side of the first air supply pipe furthest from the supporting structure, corresponding to boats 5, 6, and 7 respectively (see Appendix for details). Figure 6 The air supply zones are located at 200cm, 180cm, and 160cm respectively, and each zone has an air supply hole with a spatial diameter of 2mm. All other conditions are the same as in Example 1. The results are shown in Table 4 below.

[0077] Table 4

[0078]

[0079] Based on Tables 1 and 4, we can obtain... Figure 7 The radar map showing the film thickness distribution is shown. According to... Figure 5 It can be seen that the uniformity of film thickness in Table 4 is significantly better than that in Table 1.

[0080] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0081] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. An LPCVD apparatus, characterized in that, include: The furnace body has a first end and a second end located along its length. A support mechanism, located inside the furnace, is used to support silicon wafers; as well as The gas supply mechanism includes an end gas supply component and a middle gas supply component. The end gas supply component is disposed on the first end. One end of the middle gas supply component is disposed on the second end, and the other end extends to the middle of the furnace body. There are two middle gas supply components, which are respectively disposed on both sides of the supporting mechanism. Each middle gas supply component includes a first gas supply pipe and a second gas supply pipe extending along the length direction of the furnace body. In the arrangement direction of the two middle gas supply components, the first gas supply pipe is closer to the supporting mechanism than the second gas supply pipe. The ends of the first gas supply pipe and the second gas supply pipe away from the second end have a first gas supply port and a second gas supply port, respectively. In the length direction of the furnace body, the first gas supply port is located between the first end and the second gas supply port.

2. The LPCVD apparatus as described in claim 1, characterized in that, In the height direction of the furnace body, there is a height difference between the first gas supply pipe and the second gas supply pipe; and / or The end air supply assembly has multiple air outlets, which are arranged in a ring at intervals; and / or It also includes an exhaust mechanism located on the second end.

3. The LPCVD apparatus as described in claim 1, characterized in that, The first air supply pipe has a replenishment area on its side wall, which is located between the first air supply port and the second air supply port, and the replenishment area has a replenishment hole.

4. The LPCVD apparatus as described in claim 3, characterized in that, The air replenishment zone is located on the side of the first air supply pipe away from the supporting mechanism; and / or The inner diameter of both the first and second air supply pipes is 8.2-8.8 mm, and the diameter of the air replenishment hole is 1.8-2.2 mm.

5. The LPCVD apparatus as described in claim 3, characterized in that, The air replenishment area is located on the side of the first air supply pipe away from the supporting mechanism. An installation mark is provided on the outer wall of the first air supply pipe near the second end, and the installation mark is located on the same side as the air replenishment area.

6. The LPCVD apparatus as described in claim 3, characterized in that, The air replenishment area has two air replenishment holes, which are arranged in a figure-eight shape.

7. The LPCVD apparatus as described in claim 3, characterized in that, The supporting mechanism includes multiple small boats for carrying silicon wafers. The multiple small boats are disposed in the furnace body and arranged at intervals along the length of the furnace body. The first gas supply port and the second gas supply port are both located between two adjacent small boats. The number of gas replenishment zones is less than or equal to the number of small boats between the first gas supply port and the second gas supply port. Each gas replenishment zone is corresponding to one small boat.

8. The LPCVD apparatus as described in claim 7, characterized in that, The number of boats is 10, which are arranged in sequence as boat 1, boat 2, boat 3, boat 4, boat 5, boat 6, boat 7, boat 8, boat 9 and boat 10. Boat 1 is closest to the first end and boat 10 is closest to the second end. The first air supply port is located between boat No. 3 and boat No. 4, the second air supply port is located between boat No. 7 and boat No. 8, and there are three air replenishment zones, which are respectively set up corresponding to boat No. 5, boat No. 6 and boat No.

7.

9. The LPCVD apparatus as claimed in claim 1, characterized in that, The supporting mechanism includes 10 small boats for carrying silicon wafers. The 10 small boats are disposed in the furnace body and arranged at intervals along the length of the furnace body. The 10 small boats are arranged in sequence as boat 1, boat 2, boat 3, boat 4, boat 5, boat 6, boat 7, boat 8, boat 9 and boat 10. Boat 1 is closest to the first end, and boat 10 is closest to the second end. The first air supply port is located between boat No. 3 and boat No. 4, and the second air supply port is located between boat No. 7 and boat No. 8; or The first air supply port is located between boats No. 3 and No. 4, and the second air supply port is located between boats No. 7 and No.

8. Two air replenishment zones are provided on the side of the first air supply pipe away from the supporting mechanism: one air replenishment zone is located between boats No. 5 and No. 6, and the other air replenishment zone is located between boats No. 6 and No.

7. Each air replenishment zone has an air replenishment hole; or The first air supply port is located between boat No. 3 and boat No. 4, and the second air supply port is located between boat No. 6 and boat No.

7.

10. An apparatus for preparing TOPCON batteries, characterized in that, Includes the LPCVD apparatus as described in any one of claims 1-9.

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