Gate valve assembly and semiconductor process equipment

Abstract

The application discloses a gate valve assembly and a semiconductor process equipment. The gate valve assembly is used for closing a transmission port of a process chamber in the semiconductor process equipment, and mainly comprises: a baffle body in a plate structure and used for closing the transmission port; a supporting piece connected with the baffle body and used for driving the baffle body to be close to or away from the transmission port; and an adjusting mechanism used for adjusting the interval distance of the baffle body and the supporting piece at the connection. A plurality of adjusting mechanisms are arranged along the length direction of the baffle body between the baffle body and the supporting piece. The gate valve assembly can improve the closing effect between the baffle body and the transmission port, and avoid problems such as overflow of process gas at the transmission port and deposition of by-products in the transmission port caused by the poor sealing of the transmission port of the process chamber.

Description

Technical Field

[0001] This application relates to the field of hydraulic technology, and in particular to a valve assembly and a semiconductor process apparatus incorporating the valve assembly. Background Technology

[0002] Metal-organic chemical vapor deposition (MOCVD) equipment is an important tool for fabricating LED devices and semiconductor power devices. It is mainly used for the growth of III-V group semiconductor thin film materials based on GaN (AlGaInN series materials) and GaAs (AlGaInP / AlGaInAs series materials).

[0003] Metal-organic chemical vapor deposition (MOCVD) equipment, as a type of semiconductor process equipment, typically includes a chamber for processing semiconductor workpieces. This chamber has a transfer port for workpiece entry and exit. Once the workpiece enters the chamber, the transfer port needs to be sealed by a valve assembly. In existing technologies, due to inevitable movement errors in the valve assembly during reciprocating motion, frictional losses during use, and the inherent thermal expansion and contraction characteristics of the device itself, the transfer port is prone to leaks. This can lead to problems such as process gas overflow at the transfer port and byproduct deposition within the transfer port. Utility Model Content

[0004] In view of this, the purpose of this application is to provide a valve assembly and semiconductor process equipment that can improve the sealing effect between the baffle body and the transmission port, and avoid problems such as process gas overflow at the transmission port and by-product deposition in the transmission port caused by poor sealing of the transmission port of the process chamber.

[0005] To achieve the above objectives, this application provides the following technical solution:

[0006] A gate valve assembly for sealing a transfer port of a process chamber in a semiconductor process apparatus, the gate valve assembly comprising:

[0007] The main body of the baffle is a plate-shaped structure used to close the transmission port;

[0008] A support member, connected to the baffle body, is used to drive the baffle body closer to or away from the transmission port;

[0009] An adjustment mechanism is provided for adjusting the distance between the baffle body and the support member at the connection point; multiple adjustment mechanisms are arranged sequentially between the baffle body and the support member along the length direction of the baffle body.

[0010] Optionally, in the above-mentioned valve assembly, the transmission port is an arc-shaped opening, and the baffle body is an arc-shaped plate structure.

[0011] Optionally, in the above-mentioned valve assembly, the baffle body is composed of multiple unit plates spliced ​​together; each unit plate is connected to at least one of the adjustment mechanisms.

[0012] Optionally, in the above-mentioned valve assembly, the baffle body includes: at least two rows of the unit plates arranged side by side along the length direction of the baffle body; and / or, at least two rows of the unit plates arranged side by side along the width direction of the baffle body.

[0013] Optionally, in the above-described valve assembly, adjacent unit plates are connected by a flexible seal.

[0014] Optionally, in the above-mentioned valve assembly, the side of the unit plate is provided with a groove for accommodating the flexible seal.

[0015] Optionally, in the above-described valve assembly, the adjusting mechanism includes a rod-shaped connector, wherein either the baffle body or the support member is threadedly connected to the rod-shaped connector, and the other is rotatably connected to the rod-shaped connector.

[0016] Optionally, in the above-mentioned valve assembly, the adjusting mechanism includes an elastic element located between the support member and the baffle body, with its two ends connected to or abutting against the support member and the baffle body, respectively.

[0017] Optionally, in the above-mentioned valve assembly, among the plurality of elastic elements, the closer to both ends of the baffle body along its length direction, the greater the initial elastic force of the elastic element.

[0018] A semiconductor process apparatus includes a process chamber and a gate valve assembly as described above, the process chamber being provided with a transfer port for conveying a workpiece, and the gate valve assembly being used to control the opening and closing of the transfer port.

[0019] Optionally, in the above-described semiconductor process equipment, the transmission port includes: a first aperture segment, which is close to the inner wall of the process chamber and communicates with the interior of the process chamber; and a second aperture segment, which is close to the outer wall of the process chamber and communicates with the first aperture segment; in the depth direction of the transmission port, the projection of the shielding surface of the baffle body on the process chamber is completely located within the second aperture segment and completely covers the first aperture segment.

[0020] Optionally, in the above-mentioned semiconductor process equipment, at the connection between the first hole segment and the second hole segment, a limiting surface is provided circumferentially for fitting against the shielding surface of the baffle body; and / or, in the direction close to the interior of the process chamber, the cross-sectional area of ​​the second hole segment gradually decreases.

[0021] As can be seen from the above technical solution, in the valve assembly and semiconductor process equipment provided in this application, multiple adjustment mechanisms are arranged along the length of the baffle body. When the fit between one end of the baffle body and the side wall of the chamber where the transfer port is located is relatively loose or even gaps appear, the distance between the baffle body and the support is increased by adjusting the adjustment mechanism closest to the gap, or the distance between the baffle body and the support is decreased by adjusting the adjustment mechanism farthest from the gap, until the baffle body can completely seal the transfer port, thereby ensuring that the fit between both ends of the baffle body and the side wall of the chamber where the transfer port is located is relatively tight. It can be seen that by adjusting the two ends of the baffle body along its length, the sealing effect between the baffle body and the transfer port can be adjusted more precisely, which can effectively prevent the process gas from overflowing at the transfer port during the process, ensure the stability of the process gas during the process, and also effectively reduce the deposition of by-products in the transfer port, which can effectively reduce the number of transfer particles introduced during the wafer transfer process. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is a schematic diagram of the fitting structure of a valve assembly provided in the comparative example of this application when it closes the transmission port of a process chamber.

[0024] Figure 2 This is a schematic diagram of the movement process of the valve assembly provided in the comparative example of this application when it is close to the transfer port of the process chamber to close it (the arrow in the figure indicates the direction of movement of the baffle).

[0025] Figure 3 This is a schematic diagram of the movement process of the valve assembly provided in the comparative example of this application when it is moved away from the transfer port of the process chamber to be opened (the arrow in the figure indicates the direction of movement of the baffle).

[0026] Figure 4 This is a simplified structural diagram of the valve assembly provided in the comparative examples of this application.

[0027] Figures 5 to 8 This is a schematic diagram of the structure of several different valve assemblies provided in the exemplary embodiments of this application.

[0028] Figure 9This is a schematic diagram of the structure of a unit board and a partially enlarged view thereof, provided in an exemplary embodiment of this application.

[0029] Figure 10 This is a schematic diagram of the structure of a sealing element provided in an exemplary embodiment of this application.

[0030] Figure 11 This is a schematic diagram of the structure of the transfer port of a process chamber and its side wall, provided in an exemplary embodiment of this application.

[0031] Figure 12 for Figure 11 A magnified schematic diagram of the transmission port in the diagram.

[0032] Figure 13 This application provides an exemplary embodiment of a schematic diagram of the movement process of a valve assembly when it approaches the transmission port of a process chamber to close it (the arrows in the diagram indicate the direction of movement of the baffle).

[0033] Figure 14 This application provides an exemplary embodiment of a schematic diagram of the movement process of a valve assembly moving away from the transmission port of a process chamber to open it (the arrows in the diagram indicate the direction of movement of the baffle).

[0034] in:

[0035] 1-Large graphite disk, 2-Spindle, 3-Small graphite disk, 4-Induction coil, 5-Top plate

[0036] 6-Exhaust gas collection component, 7-Baffle, 8-Spray head, 9-Flexible seal, 70-Groove.

[0037] 601 - Transmission port, 611 - First hole section, 612 - Second hole section, 621 - Limiting surface.

[0038] 701 - Baffle body, 702 - Support component, 703 - Bearing, 704 - Adjustment mechanism

[0039] 711-Unit plate, 721-Main rod, 722-Sub-rod, 723-Strip connector

[0040] 741-Rock-shaped connector, 742-Elastic element, 742a-First elastic element.

[0041] 742b - Second elastic element, 742c - Third elastic element, 742d - Fourth elastic element. Detailed Implementation

[0042] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0043] Comparative Example

[0044] Please see Figures 1 to 4 The basic operation of a multi-wafer MOCVD equipment includes: opening the baffle 7 at the transfer port 601; the transfer system (including the transfer chamber and the robotic arm) feeds the wafer through the transfer port 601 onto the graphite tray in the process chamber; a carrier gas carries the organometallic compound and hydride molecules through different pipelines to the area above the heated substrate inside the reaction chamber, where an epitaxial thin film is formed on the substrate surface. For example... Figure 1 The diagram shows a typical cross-sectional structure of a multi-wafer MOCVD chamber. A large graphite disk 1 is located on a rotating shaft 2, which drives its rotation. Multiple smaller graphite disks 3 are placed above the large disk 1, and rotating gas below them drives the smaller disks 3 and the wafers placed on them to rotate. An induction coil 4 heats the large disk 1 from below, using it as a heat source to heat the smaller graphite disks 3 and the wafers above. A top plate 5, a tail gas collector 6, and a baffle 7 form a process isolation zone to prevent heat from dissipating outwards and ensure laminar flow of the process gas. The process gas is introduced into the process chamber from the carrier gas through five layers of spray nozzles 8 located above the chamber, and after reaching the wafer surface, it participates in the reaction to form an epitaxial film. In this process engineering, the process gas is sprayed out in all directions through the five-layer air inlet spray head 8 located in the center of the process chamber, until it is discharged from the tail gas outlet close to the edge of the inner wall of the process chamber. Ideally, the process gas maintains a laminar flow state from the spray head 8 to the tail gas outlet, and the process gas flow velocity in the circumferential direction centered on the spray head 8 is kept consistent.

[0045] In multi-wafer MOCVD equipment, wafers are fed into and out of the process chamber via transfer port 601. After these feeding actions are completed, transfer port 601 needs to be closed to ensure the process area remains sealed. During the process, process gases diffuse horizontally outward through the central spray head 8, eventually reaching the transfer port 601. If the seal of transfer port 601 is not good enough, process gases will leak out, and process gases and byproducts will seep into the transfer channel, adhering to a large amount of deposits. Simultaneously, it will cause instability in the airflow field at transfer port 601, generating eddies and affecting process stability. Furthermore, it will affect heat dissipation uniformity, with the temperature at transfer port 601 being significantly lower than other locations, causing overall temperature unevenness and thus affecting process uniformity.

[0046] Normally, the lifting and lowering action and the lateral movement and locking action of the stop 7 ensure the sealing of the transfer port 601, achieving the functions of isolating the process area and keeping it warm. When it is necessary to open the transfer port 601 for the wafer transfer process, the stop 7 will first move laterally away from the transfer port 601 to unlock, and then move vertically downward to the initial position (e.g., Figure 3 The open transfer port 601 ensures that the robot arm can transfer pieces between the process chamber and the transfer chamber. After the piece transfer is completed, when preparing for the process, the stop 7 will first move vertically upward, and then move laterally towards the transfer port 601 to lock, until the stop 7 is tightly against the outer wall of the exhaust gas collector 6, that is, the stop 7 has reached its maximum position. Figure 2 The process location shown in the diagram ensures that the process area within the process chamber is in a sealed state, preventing the loss of process gases and temperature.

[0047] While the above solution can provide a certain degree of sealing during the process, the baffle body 701 of the baffle 7 needs to be made of graphite. Due to process requirements, chlorine gas is needed, and the baffle body 701 will be coated with a pyrolytic carbon coating. Applying a pyrolytic carbon coating to graphite makes it difficult to guarantee the uniformity of the curvature of the baffle body 701 during manufacturing. Furthermore, after the baffle 7 is locked, the baffle body 701 is fixedly connected to the support member 702, and the entire baffle body 701 is supported by the support member 702. Sometimes, there will be a gap between the baffle body 701 and the outer wall of the chamber where the transmission port 601 is located (i.e., the outer wall of the exhaust gas collection member 6). For example, the left side of the baffle body 701 may fit snugly against the outer wall of the exhaust gas collection member 6, but there may be a large gap on the right side; or the right side of the baffle body 701 may fit snugly against the outer wall of the exhaust gas collection member 6, but there may be a large gap on the left side. In other words, the gaps at the left and right edges of the baffle body 701 (which are also the two ends along the length of the baffle) cannot simultaneously achieve the optimal fit. This results in the inability to completely fit the perimeter of the baffle body 701 against the outer wall of the exhaust gas collection component 6, even under normal temperature conditions (i.e., during the transfer process). (Complete fit specifically means a gap within 0.1mm). Furthermore, at process temperatures (e.g., 1000℃), the temperature at the location of the baffle body 701 will reach approximately 200℃. The central area of ​​the baffle body 701 directly contacts the high-temperature environment inside the chamber through the transfer port 601, while the edge area of ​​the baffle body 701 against the outer wall of the exhaust gas collection component 6 has a relatively lower temperature. Therefore, a temperature difference exists between the central and edge areas of the baffle body 701. Under the thermal effects of thermal expansion and contraction, the baffle body 701 may deform, resulting in deformation on the left and right sides (see [reference]). Figure 4 (The positions indicated by a and b in the text) and the upper and lower sides (see also...) Figure 4 The different degrees of tightness of the c and d positions in the diagram cause gaps to appear on the left and right sides or the top and bottom sides of the baffle body 701, resulting in problems such as uneven process airflow and temperature field.

[0048] Exemplary embodiments

[0049] This application provides a valve assembly for sealing a transfer port 601 of a process chamber in a semiconductor process apparatus. In some embodiments, the transfer port 601 is an arc-shaped curved opening centered on the radius of the internal cavity of the process chamber, with a central angle of 19°. However, it is not limited to this; in other embodiments, the transfer port 601 may also be a long strip, square, or circular opening. For ease of explanation, an arc-shaped opening will be used as an example below. Please refer to... Figure 5The valve assembly includes a baffle body 701, a support member 702, and an adjusting mechanism 704. Specifically: the baffle body 701 is an arc-shaped plate structure adapted to the shape of the transmission port 601, used to control the opening and closing of the transmission port 601; the support member 702 is connected to the baffle body 701 and is used to drive the baffle body 701 closer to or further away from the transmission port 601 to block or open the transmission port 601, i.e., control the opening and closing of the transmission port 601; the adjusting mechanism 704 is used to adjust the distance between the baffle body 701 and the support member 702 at the connection point; multiple adjusting mechanisms 704 are arranged sequentially along the length of the baffle body 701 between the baffle body 701 and the support member 702.

[0050] When the baffle body 701 approaches and closes the transmission port 601, the two ends of the baffle body 701 in the length direction are prone to large deviations from the transmission port 601, resulting in poor sealing. At this time, in the length direction of the baffle body 701, the fit between one end of the baffle body 701 and the side wall of the chamber where the transmission port 601 is located is relatively tight, while the fit between the other end of the baffle body 701 and the side wall of the chamber where the transmission port 601 is located is relatively loose, and there may even be gaps. Therefore, the valve assembly provided in this application has multiple adjustment mechanisms 704 arranged along the length of the baffle body 701. When the fit between one end of the baffle body 701 and the side wall of the chamber where the transmission port 601 is located is relatively loose or even a gap appears, the distance between the baffle body 701 and the support member 702 is increased by adjusting the adjustment mechanism 704 closest to the gap, or the distance between the baffle body 701 and the support member 702 is decreased by adjusting the adjustment mechanism 704 farthest from the gap, until the baffle body 701 can completely close the transmission port 601, thereby ensuring that the fit between both ends of the baffle body 701 and the side wall of the chamber where the transmission port 601 is located is relatively tight. As can be seen, by adjusting the two ends of the baffle body 701 along its length using the adjustment mechanism 704, the sealing effect between the baffle body 701 and the transmission port 601 can be adjusted more precisely. This can effectively prevent the process gas from overflowing at the transmission port during the process, ensure the stability of the process gas during the process, and also effectively reduce the deposition of by-products inside the transmission port 601, thereby effectively reducing the number of transmission particles introduced during the transfer process.

[0051] In some embodiments, the baffle body 701 is composed of multiple unit plates 711 spliced ​​together, and each unit plate 711 is connected to at least one adjusting mechanism 704. For example, please refer to Figure 6 or Figure 8 The baffle body 701 includes at least two rows of unit plates 711 arranged side-by-side along the length of the baffle body 701, with each row containing one or two or more unit plates 711. Further, please refer to... Figure 7 and Figure 8 , the baffle main body 701 includes: at least two rows of unit plates 711 arranged side by side along the width direction of the baffle main body 701, and one, two or more unit plates 711 are arranged in each row. Taking the baffle main body 701 being composed of four unit plates 711 spliced together as an example, if the transmission port 601 has a central angle of about 20°, with the radius of the inner cavity of the process chamber as the center of the circle, at this time, the four unit plates 711 are spliced into a "field" shape. Moreover, the four unit plates 711 are arc-shaped curved surface structures of the same size, and all take the radius of the inner cavity of the process chamber as the center of the circle and have a central angle of about 10°. However, it is not limited to this. For the above-mentioned transmission port 601 with a central angle of about 20°, the baffle main body 701 can also be composed of eight unit plates 711 of the same size spliced together. The eight unit plates 711 are distributed in two upper and lower rows, and the central angle of each unit plate 711 is about 5°; or, the baffle main body 701 can also be composed of ten unit plates 711 of the same size spliced together. The ten unit plates 711 are distributed in two upper and lower rows, and the central angle of each unit plate 711 is about 4°. During specific implementation, the baffle main body 701 is divided into multiple regions to form multiple unit plates 711. When the baffle main body 7 closes the transmission port 601, by adjusting the gaps at the sealing positions between each unit plate 711 and the side wall of the chamber where the transmission port 601 is located, the closing effect of the baffle main body 701 on the transmission port 601 can be adjusted more precisely and targeted.

[0052] In some embodiments, adjacent unit plates 711 are connected by a flexible seal 9. Moreover, as Figure 9 shown, a groove 70 for accommodating the flexible seal 9 is provided on the side of each unit plate 711, so that the flexible seal 9 can be embedded in the groove 70 of the unit plate 711. For example, when the baffle main body 701 is composed of four unit plates 711 spliced together, as Figure 10 shown, the flexible seal 9 is a cross-shaped structure, and arc-shaped chamfers are provided at the horizontal and vertical corners for adapting to the arc-shaped chamfers at the joints of the grooves 70 on the horizontal side and the vertical side of the unit plate 711. In some embodiments, the flexible seal 9 is made of high-temperature resistant rubber material, and its temperature resistance can reach above 230°C, which can ensure the sealing performance at the splicing position of adjacent unit plates 711. During specific implementation, the thickness of the flexible seal 9 is preferably as close as possible to the thickness of the unit plate 711 or the same as the thickness of the unit plate 711. In addition, in other embodiments, when the baffle main body 701 is composed of more unit plates 711 spliced together, the shape design of the flexible seal 9 can be adjusted adaptively and the number of strip-shaped connecting parts 723 and sub-rods 722 in the support member 702 can be increased synchronously, which can achieve more partitions and increase the flexible adjustment degree of the baffle main body 701.

[0053] During the process, under the influence of the high-temperature environment inside the process chamber, the temperature of the baffle body 701 can reach approximately 200°C. The central area of ​​the baffle body 701, facing the transmission port 601, experiences a relatively higher temperature, potentially reaching around 200°C. The edge area of ​​the baffle body 701 is in contact with the outer wall of the exhaust gas collection component 6, not directly contacting the transmission port 601. Furthermore, thanks to the water-cooling device surrounding the exhaust gas collection component 6, the edge area of ​​the baffle body 701 has a relatively lower temperature, generally below 200°C. Therefore, a temperature difference exists between the central and edge areas of the baffle body 701, potentially causing deformation due to thermal expansion and contraction. However, since the baffle body 701 is composed of multiple unit plates 711, and the flexible sealing element 9 provides cushioning, the thermal tension between adjacent unit plates 711 is buffered, effectively preventing deformation at the edges and ensuring a proper seal.

[0054] In some embodiments, please refer to Figure 7 The adjusting mechanism 704 includes a rod-shaped connector 741, such as a screw, threaded rod, or bolt. Either the baffle body 701 or the support member 702 is threadedly connected to the rod-shaped connector 741, while the other is rotatably connected to the rod-shaped connector 741 (e.g., via a bearing 703). Preferably, the baffle body 701 is threadedly connected to the rod-shaped connector 741, and the support member 702 is rotatably connected to the rod-shaped connector 741 within its mounting hole via a bearing 703. Thus, by rotating the rod-shaped connector 741, the distance between the baffle body 701 and the support member 702 at the connection point can be adjusted. When the adjustment mechanism 704 includes a threaded rod-shaped connector 741, if the baffle body 701 does not seal the transmission port 601 tightly and there are large gaps at some edge positions, the specific adjustment process can be as follows: First, manually move the baffle body 701 to the transmission port 601 to seal it. Then, rotate the rod-shaped connector 741 in the adjustment mechanism 704 near the position with large gaps to fine-tune the baffle unit 711 at that position. The purpose is to fine-tune the force at the edge of the baffle body 701 so that the gap between the edge of each baffle body 701 and the exhaust gas collection component 6 is less than 0.1mm, achieving the best sealing effect. The flexible seal 9 between adjacent unit plates 711 can alleviate the stress generated during the adjustment process. However, during the adjustment process, it is necessary to observe the degree of compression at the center position of the flexible seal 9 to ensure that the gap between the unit plate 711 and the flexible seal 9 in the central area of ​​the baffle body 701 is also kept within 0.1mm.

[0055] Further, please see Figure 5 or Figure 6 or Figure 8The adjusting mechanism 704 also includes an elastic element 742, such as a compression spring. The elastic element 742 is sleeved on the rod-shaped connector 741, located between the support member 702 and the baffle body 701, with both ends of the elastic element 742 connected to or abutting against the support member 702 and the baffle body 701, respectively. When the support member 702, carrying the baffle body 701, approaches the transmission port 601 and fits against the outer wall of the exhaust gas collection member 6 (or extends into the transmission port 601 and fits against its internal limiting surface 621), the elastic element 742, through its own elasticity, can provide a certain supporting force and buffering force between the baffle body 701 and the support member 702. Thus, the elastic element 742 can share part of the force on the threaded structure of the baffle body 701 at the connection position, and play a protective role for the threaded connection structure between the baffle body 701 and the rod-shaped connector 741; at the same time, the elastic element 742 can also share part of the force on the support 702 at the bearing connection position, and play a protective role for the bearing between the support 702 and the rod-shaped connector 741.

[0056] In some embodiments, among the multiple elastic elements 742 in the valve assembly, the initial elastic force of the elastic element 742 is greater closer to both ends of the baffle body 701 along its length. For example, on both sides of the center of the baffle body 701, a first elastic element 742a, a second elastic element 742b, a third elastic element 742c, and a fourth elastic element 742d are arranged sequentially in a direction away from the center. The first elastic element 742a, the second elastic element 742b, the third elastic element 742c, and the fourth elastic element 742d are progressively farther away from the center of the baffle body 701, and the initial elastic force of the first elastic element 742a, the second elastic element 742b, the third elastic element 742c, and the fourth elastic element 742d increases progressively. It should be noted that the initial elastic force mentioned in this application refers to the restoring force stored by the elastic element 742 through pre-compression when the valve assembly is in its natural state without external force, which is also when the baffle body 701 is not blocking the transmission port 601. If the elastic element 742 is a compression spring, then the initial elastic force refers to the restoring force stored in the compression spring under pre-compression state.

[0057] In some embodiments, each adjustment mechanism 704 includes the aforementioned rod-shaped connector 741 and elastic member 742. In this case, the elastic member 742 is generally sleeved outside the rod-shaped connector 741 located between the support member 702 and the baffle body 701.

[0058] In some embodiments, the support member 702 includes a main rod 721, a sub-rod 722, and a strip-shaped connecting portion 723 connected in sequence. Multiple adjusting mechanisms 704 are arranged sequentially along the length of the strip-shaped connecting portion 723 and connected to it. The main rod 721 is used to connect the drive device to control the valve assembly near or away from the transmission port 601. The two ends of the sub-rod 722 are respectively connected to the strip-shaped connecting portion 723 and the main rod 721. In some embodiments, the sub-rod 722 is fixed to the main rod 721 by screws. Multiple unit plates 711 are screwed into the screws from the inside out. The other end of the screw is machined to form a shaft, which is inserted into a bearing. The bearing is fixed to the strip-shaped connecting portion 723. A spring is provided between the bearing and the screw. When closed, the spring force can press the gap tightly. The springs at different positions can have different specifications; the number of spring coils at the edges can be increased to increase the pressing force.

[0059] Furthermore, this application embodiment also provides a semiconductor process apparatus, which includes a process chamber and a gate valve assembly. The process chamber is provided with a transfer port 601 for conveying workpieces, and the gate valve assembly is used to control the opening and closing of the transfer port 601.

[0060] To prevent the baffle body 701 from rubbing and scraping when entering the transfer port 601, which could introduce particles and affect the process results within the cavity, some embodiments incorporate a chamfered design at the inner opening of the transfer port 601, i.e., designing the transfer port channel in a flared shape, as shown in the front view. Figure 13 , Figure 14 As shown; furthermore, the outer edge of the baffle body 701 can also be chamfered, allowing the baffle body 701 to enter the transmission port 601 more smoothly. For details, please refer to... Figures 12 to 14 In some embodiments, the transmission port 601 includes a first segment 611 and a second segment 612, wherein: the first segment 611 is close to the inner wall of the process chamber and communicates with the interior of the process chamber; the second segment 612 is close to the outer wall of the process chamber and communicates with the first segment 611; in the depth direction of the transmission port 601, the projection of the shielding surface of the baffle body 701 onto the process chamber is completely located within the second segment 612 and completely covers the first segment 611. Further, in some embodiments, at the connection between the first segment 611 and the second segment 612, a limiting surface 621 is provided circumferentially for fitting against the shielding surface of the baffle body 701; and / or, in the direction close to the interior of the process chamber, the cross-sectional area of ​​the second segment 612 gradually decreases, that is, the second segment 612 is flared. As can be seen, in the semiconductor process equipment provided in this application, a scheme is designed for the transmission port 601 to embed the baffle body 701 into the transmission port 601, which is beneficial to balance the temperature difference of the baffle body 701 itself and avoid large temperature differences in different areas of the baffle body 701.

[0061] In specific implementation, the outer wall of the exhaust gas collection component 6 is hollowed out according to the size of the baffle body 701, forming the structure of the second hole segment 612 in the aforementioned transmission port 601. This allows the baffle body 701 to be embedded within the second hole segment 612 when the transmission port 601 is closed, while ensuring that the outer wall of the baffle body 701 remains substantially flush with the outer wall of the exhaust gas collection component 6. This results in a near-integral combined structure between the baffle body 701 and the exhaust gas collection component 6 within the transmission port 601 during the process, ensuring the airtightness of the process environment within the process chamber. This design effectively reduces the temperature difference between the baffle body 701 as a whole and the transmission port 601, thereby reducing the thermal stress caused by temperature differences in different areas of the baffle body 701.

[0062] The valve assembly and semiconductor process equipment provided in this application are mainly used in GaN epitaxial multi-wafer MOCVD equipment. During the MOCVD process, it is necessary to ensure the consistency of temperature and temperature gradient. That is, the temperature gradient from the surface of each wafer at the bottom of the chamber to the surface of the cover plate at the top of the chamber needs to be consistent. A water-cooling channel is set outside the inner chamber to cool the exhaust gas channel. Due to the setting of the transfer port 601 and the baffle body 701, the temperature conduction will be affected at the transfer port 601. Through the above-mentioned embedded design, it can be ensured that the baffle body 701 is basically located inside the transfer port 601. The distance between the outer wall of the baffle body 701 and the outer wall of the exhaust gas collection component 6 where the transfer port 601 is located and the water-cooling device outside the chamber is also basically consistent, which can also better ensure the consistency of temperature conduction.

[0063] In summary, the valve assembly provided in this application can solve the problem of poor sealing in multi-wafer MOCVD systems under process conditions and improve the consistency of process gas flow field; the semiconductor process equipment provided in this application can enhance the consistency of heat conduction at the transfer port 601 and other locations, and optimize the consistency of process temperature field.

[0064] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed.

[0065] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0066] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A valve assembly for sealing the transfer port of a process chamber in a semiconductor process equipment, characterized in that, The valve assembly includes: The main body of the baffle is a plate-shaped structure used to close the transmission port; A support member, connected to the baffle body, is used to drive the baffle body closer to or away from the transmission port; An adjustment mechanism is provided for adjusting the distance between the baffle body and the support member at the connection point; multiple adjustment mechanisms are arranged sequentially between the baffle body and the support member along the length direction of the baffle body.

2. The valve assembly according to claim 1, characterized in that, The transmission port is an arc-shaped opening, and the baffle body is an arc-shaped plate structure; And / or, the baffle body is composed of multiple unit plates spliced ​​together, and each unit plate is connected to at least one of the adjustment mechanisms.

3. The valve assembly according to claim 2, characterized in that, The baffle body includes: At least two rows of the unit plates are arranged side by side along the length of the baffle body; And / or, at least two rows of the unit plates are arranged side by side along the width direction of the baffle body.

4. The valve assembly according to claim 2 or 3, characterized in that, The adjacent unit plates are connected by a flexible seal.

5. The valve assembly according to claim 4, characterized in that, The side of the unit plate is provided with a groove for accommodating the flexible seal.

6. The valve assembly according to claim 1, characterized in that, The adjustment mechanism includes: A rod-shaped connector, wherein either the baffle body or the support member is threadedly connected to the rod-shaped connector, and the other is rotatably connected to the rod-shaped connector; An elastic element is located between the support member and the baffle body, with its two ends connected to or abutting against the support member and the baffle body, respectively.

7. The valve assembly according to claim 6, characterized in that, Among the plurality of elastic elements, the closer to the two ends of the baffle body along its length, the greater the initial elastic force of the elastic element.

8. A semiconductor process apparatus, comprising a process chamber, the process chamber being provided with a transfer port for conveying a workpiece, characterized in that, It also includes a valve assembly as described in any one of claims 1 to 7 for controlling the opening and closing of the transmission port.

9. The semiconductor process equipment according to claim 8, characterized in that, The transmission port includes: The first hole section is close to the inner wall of the process chamber and communicates with the interior of the process chamber; The second hole section is located near the outer wall of the process chamber and communicates with the first hole section; In the depth direction of the transmission port, the projection of the shielding surface of the baffle body onto the process chamber is completely located within the second hole segment and completely covers the first hole segment.

10. The semiconductor process equipment according to claim 9, characterized in that, At the connection between the first hole segment and the second hole segment, a limiting surface is provided circumferentially for fitting with the shielding surface of the baffle body; And / or, in the direction close to the interior of the process chamber, the cross-sectional area of ​​the second hole segment gradually decreases.

Images