High power crimped packaged three-phase rectifier bridge

Abstract

The utility model relates to the field of power electronics, disclose high -power crimping formula package's three -phase rectifier bridge, including elastic pressing plate, the elastic pressing plate passes through the ALN heat conduction porcelain piece and the nickel plating copper bottom plate locking as an organic whole with cathode, anode and public pole through the interior hexagonal bolt with high -power semiconductor chip, with shell one and shell two form one whole high -power rectifier bridge, the utility model three -phase rectifier bridge can be high -efficient, stable conversion for the medium -high power system of direct current, can be compact according to the different occasion, the space occupation is small, and the trigger circuit is simple, and the switchgear body is installed conveniently.

Description

Technical Field

[0001] This utility model relates to the field of power electronics technology, specifically a high-power press-fit packaged three-phase rectifier bridge. Background Technology

[0002] Difficult to precisely control, rectifier bridges are prone to problems such as localized overheating and component failure when facing extreme conditions such as instantaneous overcurrent and voltage fluctuations, severely impacting system stability and lifespan. Existing rectifier bridge products on the market are mostly small-to-medium power integrated designs, lacking integrated solutions suitable for high-power scenarios. This fails to meet the high reliability, high efficiency, and miniaturization requirements of high-power applications such as industrial motor drives, high-voltage DC transmission, and new energy storage converters. Therefore, there is an urgent need to develop a new type of high-power rectifier device that improves component parameter consistency and system stability, reduces energy consumption and cost, and fills the market gap for high-power integrated three-phase rectifier bridges by optimizing packaging structure and component integration methods. Utility Model Content

[0003] The purpose of this invention is to address the shortcomings of existing technologies by proposing a high-power press-fit packaged three-phase rectifier bridge.

[0004] To achieve the above objectives, the present invention adopts the following technical solution: a high-power press-fit three-phase rectifier bridge, including a spring plate, wherein the spring plate locks the high-power semiconductor chip, cathode, anode and common electrode together with the nickel-plated copper base plate through an ALN ​​thermally conductive ceramic sheet by means of internal hexagonal bolts, forming an integral high-power rectifier bridge with the outer shell one and the outer shell two.

[0005] As a further description of the above technical solution:

[0006] The pressure plate is made of 60Si2Mn material and is used to maintain pressure on internal components.

[0007] As a further description of the above technical solution:

[0008] A housing is provided above the nickel-plated copper base plate. An electrode positioning groove and an ALN ​​thermally conductive ceramic plate are provided inside the housing. The ALN thermally conductive ceramic plate is located above the nickel-plated copper base plate. An anode is located above the ALN thermally conductive ceramic plate. A common electrode is located above the anode. A high-power semiconductor chip is located above the common electrode. A cathode is located above the high-power semiconductor chip.

[0009] As a further description of the above technical solution:

[0010] A chip positioning ring is provided between the high-power semiconductor chip and the cathode, and the chip positioning ring limits the position of the high-power semiconductor chip.

[0011] As a further description of the above technical solution:

[0012] An insulating gate electrode is disposed above the cathode, a steel pressure pad is disposed above the insulating gate electrode, a spring pressure plate is disposed above the steel pressure pad, and a second outer shell is disposed above the spring pressure plate and the first outer shell.

[0013] As a further description of the above technical solution:

[0014] The four corners of the spring plate and the top of the nickel-plated copper base plate are all threaded with hexagonal socket head cap screws. An insulating groove is provided on the top of the nickel-plated copper base plate 1 to improve the creepage distance.

[0015] As a further description of the above technical solution:

[0016] Nuts are threaded through and connected to the four corners of the nickel-plated copper base plate to fix the packaged three-phase rectifier bridge. The internal structure of the packaged three-phase rectifier bridge is a press-fit structure.

[0017] This utility model has the following beneficial effects:

[0018] 1. The high-power three-phase bridge can be equipped with larger chips through the press-fit structure, with stronger current carrying capacity, more compact structure, and reduced space occupation. During assembly, each internal component has an automatic positioning device to avoid installation misalignment, improve assembly accuracy, and increase production efficiency.

[0019] 2. This utility model of a three-phase rectifier bridge can efficiently and stably convert DC power into a medium-to-high power system. Depending on the application, it can achieve compact equipment, small space occupation, simple wiring, and easy installation in switch cabinets. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the overall structure of the high-power press-fit packaged three-phase rectifier bridge proposed in this utility model.

[0021] Legend:

[0022] 1. Nickel-plated copper base plate; 2. Outer shell one; 3. ALN thermal conductive ceramic plate; 4. Anode; 5. Common electrode; 6. High-power semiconductor chip; 7. Chip positioning ring; 8. Cathode; 9. Insulating gate electrode body; 10. Steel pressure pad; 11. Spring pressure plate; 12. Outer shell two; 13. Hex socket head cap screw; 14. Nut. Detailed Implementation

[0023] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0024] Example 1:

[0025] like Figure 1 As shown, the high-power press-fit packaged three-phase rectifier bridge provided in this embodiment includes: a spring plate 11, which uses internal hex bolts 13 to lock the high-power semiconductor chip 6, cathode 8, anode 4 and common electrode 5 together with the ALN thermal conductive ceramic sheet 3 and the nickel-plated copper base plate 1 to form an integral high-power rectifier bridge with the outer shell 1 2 and the outer shell 2 12.

[0026] In this embodiment, the spring plate 11 applies pressure through the internal hex bolts 13 to lock the high-power semiconductor chip 6, cathode 8, anode 4, and common electrode 5 to the nickel-plated copper base plate 1 via the ALN thermally conductive ceramic sheet 3. The outer shell 1 2 and the outer shell 2 12 form a sealed cavity, realizing the electrical connection and mechanical fixation of the three-phase rectifier bridge. The press-fit packaging ensures that the components are in close contact, reducing contact resistance. The ALN thermally conductive ceramic sheet improves heat dissipation efficiency. The overall structure realizes the rectification and conversion of high-power current.

[0027] Specifically, the pressure plate 11 is made of 60Si2Mn material and is used to maintain pressure on internal components.

[0028] In this embodiment, the 60Si2Mn material spring plate 11 utilizes the elastic deformation of the material to generate continuous pressure, providing a stable pressing force, maintaining the tight contact of internal components, avoiding poor contact due to vibration or thermal expansion and contraction, and ensuring the long-term reliable operation of the rectifier bridge.

[0029] Specifically, a housing 2 is provided above the nickel-plated copper base plate 1. An electrode positioning groove and an ALN ​​thermal conductive ceramic plate 3 are provided inside the housing 2. The ALN thermal conductive ceramic plate 3 is located above the nickel-plated copper base plate 1. An anode 4 is located above the ALN thermal conductive ceramic plate 3. A common electrode 5 is located above the anode 4. A high-power semiconductor chip 6 is located above the common electrode 5. A cathode 8 is located above the high-power semiconductor chip 6.

[0030] As a preferred implementation, the nickel-plated copper base plate 1 serves as a heat dissipation and support substrate, and the ALN thermally conductive ceramic sheet 3 isolates the anode 4 from the base plate while conducting heat. The anode 4, common electrode 5, high-power semiconductor chip 6, and cathode 8 are stacked layer by layer to form a current path. The multi-layer structure achieves a balance between electrical insulation and thermal conduction, ensuring that the heat of the chip is dissipated quickly during operation and avoiding overheating damage.

[0031] Specifically, a chip positioning ring 7 is provided between the high-power semiconductor chip 6 and the cathode 8, and the chip positioning ring 7 limits the position of the high-power semiconductor chip 6.

[0032] It should be noted that this is to prevent the chip from shifting during the crimping process, ensuring precise alignment between each electrode and the chip, and avoiding a decrease in electrical performance due to positional deviations.

[0033] Specifically, an insulating gate electrode 9 is provided above the cathode 8, a steel pressure pad 10 is provided above the insulating gate electrode 9, a spring pressure plate 11 is provided above the steel pressure pad 10, and a second outer shell 12 is provided above the spring pressure plate 11 and the outer shell 2.

[0034] As a preferred implementation, the insulating gate electrode 9 ensures insulation between electrodes, the steel pressure pad 10 and the spring pressure plate 11 work together to distribute pressure evenly, and the outer shell provides mechanical protection and environmental isolation.

[0035] Example 2:

[0036] Specifically, the four corners of the spring plate 11 and the top of the nickel-plated copper base plate 1 are all threaded with hexagonal socket head cap bolts 13, and an insulating groove is provided on the top of the nickel-plated copper base plate 1 to improve the creepage distance.

[0037] It should be noted that the internal hex bolt 13 penetrates the spring pressure plate 11 and the nickel-plated copper base plate 1, and applies locking force through the threaded connection to achieve mechanical fixation of each layer of components. The preload of the bolt ensures the reliability of the crimped contact and facilitates disassembly and maintenance.

[0038] Specifically, nuts 14 are threaded through and connected to the top of the four corners of the nickel-plated copper base plate 1 to fix the encapsulated three-phase rectifier bridge. The internal structure of the encapsulated three-phase rectifier bridge is a press-fit structure.

[0039] In this embodiment, the overall stability of the enhanced module installation is improved, making it suitable for reliable installation in vibration environments. The press-fit structure reduces contact resistance and supports high current conduction, while the sealed shell isolates environmental interference, thereby achieving efficient and stable DC-DC conversion for medium- and high-power systems. It has advantages such as compact equipment, small space occupation, simple trigger circuit, and easy installation.

[0040] In use, the current forms a path through the anode 4, common electrode 5, high-power semiconductor chip 6, and cathode 8. The unidirectional conductivity of the high-power semiconductor chip 6 converts the alternating current into direct current. The ALN thermally conductive ceramic plate 3 works with the nickel-plated copper base plate 1 to dissipate heat. The insulating gate electrode 9 and insulating groove ensure insulation safety. The press-fit structure reduces contact resistance and supports high current conduction. The outer shell 1 2 and outer shell 2 12 are sealed to isolate environmental interference, thereby achieving efficient and stable DC-DC conversion for medium and high power systems.

[0041] Finally, it should be noted that the above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Although the present utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A high-power press-fit packaged three-phase rectifier bridge, characterized in that: Includes a spring plate (11), which uses internal hex bolts (13) to lock the high-power semiconductor chip (6) with the cathode (8), anode (4) and common electrode (5) together with the nickel-plated copper base plate (1) via ALN thermal conductive ceramic sheet (3), forming an integral high-power rectifier bridge with the outer shell one (2) and the outer shell two (12); A housing (2) is provided above the nickel-plated copper base plate (1). An electrode positioning groove and an ALN ​​thermal conductive ceramic plate (3) are provided inside the housing (2). The ALN thermal conductive ceramic plate (3) is provided above the nickel-plated copper base plate (1). An anode (4) is provided above the ALN thermal conductive ceramic plate (3). A common electrode (5) is provided above the anode (4). A high-power semiconductor chip (6) is provided above the common electrode (5). A cathode (8) is provided above the high-power semiconductor chip (6). An insulating gate electrode (9) is provided above the cathode (8), a steel pressure pad (10) is provided above the insulating gate electrode (9), a spring pressure plate (11) is provided above the steel pressure pad (10), and a second outer shell (12) is provided above the spring pressure plate (11) and the first outer shell (2).

2. The high-power press-fit packaged three-phase rectifier bridge according to claim 1, characterized in that: The spring plate (11) is made of 60g2Mn material and is used to maintain pressure on the internal components.

3. The high-power press-fit packaged three-phase rectifier bridge according to claim 1, characterized in that: A chip positioning ring (7) is provided between the high-power semiconductor chip (6) and the cathode (8), and the chip positioning ring (7) and the outer casing (2) limit the position of the high-power semiconductor chip (6).

4. The high-power press-fit packaged three-phase rectifier bridge according to claim 1, characterized in that: The four corners of the spring plate (11) and the top of the nickel-plated copper base plate (1) are threaded with internal hex bolts (13). An insulating groove is provided on the top of the nickel-plated copper base plate (1) to improve the creepage distance.

5. The high-power press-fit packaged three-phase rectifier bridge according to claim 1, characterized in that: Nuts (14) are threaded through and connected to the four corners of the nickel-plated copper base plate (1) to fix the packaged three-phase rectifier bridge. The internal structure of the packaged three-phase rectifier bridge is a press-fit structure.

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