Control circuit with bidirectional current input
Patent Information
- Application Number
- CN202522003673.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-17
- Publication Date
- 2026-08-21
- Estimated Expiration
- 2035-09-17
AI Technical Summary
[0006]针对以上问题,本实用新型提供了一种可双向电流输入的控制电路,用以解决现有技术中控制电路结构较复杂且不能支持双向电流输入的问题
[0023] By using the above method, multiple voltage divider resistors are set up in conjunction with the field-effect transistor circuit to achieve high impedance detection of voltage signals, reducing the impact on external circuits and ensuring voltage detection accuracy.
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Figure CN224669681U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of bidirectional current input, specifically to a control circuit capable of bidirectional current input. Background Technology
[0002] With the widespread application of electronic control systems and intelligent devices, the demands on control circuits in areas such as current detection, voltage acquisition, and signal processing are constantly increasing. Existing control circuits typically only support a single current input mode or voltage input mode, meaning the signal input method is fixed during the hardware design phase. The following are two existing control circuit structures.
[0003] The first type, such as Figure 1 As shown, voltage and current are input via separate ports, and the input direction is unidirectional. This means that when the system needs to detect both current and voltage, separate detection circuits are often required, leading to increased hardware resource consumption, circuit complexity, and cost.
[0004] The second type, such as Figure 2 As shown, voltage and current are input at the same port. The control switch in the circuit is controlled by software to adjust the input mode. When the control switch is closed, it is in current input mode; when the control switch is open, it is in voltage input mode. In other words, Figure 2 The circuit structure in the circuit is highly dependent on the control switch and the corresponding software, which reduces circuit reliability and increases maintenance costs.
[0005] Therefore, traditional circuits are highly complex and often cannot conduct bidirectional current, only detecting current in one direction, which limits their application range. Utility Model Content
[0006] To address the above problems, this utility model provides a control circuit capable of bidirectional current input, thereby solving the problem that the existing control circuits have complex structures and cannot support bidirectional current input.
[0007] This invention provides a control circuit capable of bidirectional current input. The control circuit includes a first terminal, a second terminal, a field-effect transistor circuit, and a detection and processing unit.
[0008] The field-effect transistor (FET) circuit comprises multiple FETs connected in series. When the control circuit is in current input mode, the FET circuit is in a conducting state, forming a low-impedance current detection path to achieve bidirectional current conduction between the first and second terminals. A detection and processing unit is connected to the FET circuit and is used to detect the current between the first and second terminals.
[0009] By employing the above method, a field-effect transistor (FET) circuit is placed between the first and second terminals, which can change its conduction state according to the operating mode of the control circuit. When the circuit is in current input mode, the FET circuit remains on, thereby forming a low-impedance current detection path between the first and second terminals, achieving bidirectional current detection, simplifying the circuit structure, and enabling the control circuit to adapt to more application scenarios. Simultaneously, the detection and processing unit can detect and process the current flowing between the first and second terminals, ensuring the accuracy of the current signal detection.
[0010] Optionally, the detection and processing unit includes an input signal acquisition terminal and a shunt resistor. The two ends of the shunt resistor are connected to the input signal acquisition terminal and the field-effect transistor circuit, respectively, to form a low-impedance current detection path.
[0011] By using the above methods, precise current sampling is achieved through shunt resistors, further enhancing the current detection accuracy of the detection and processing unit.
[0012] Optionally, the detection and processing unit further includes a current detection amplification resistor, which is disposed between the first terminal and the field-effect transistor circuit to amplify the current signal.
[0013] By using the above methods, setting a current detection amplification resistor can enhance the current signal amplitude, facilitate subsequent processing, and improve detection sensitivity.
[0014] Optionally, the control circuit also includes a protector, with its two ends connected to the first terminal and the second terminal respectively, and connected in parallel with the field-effect transistor circuit, for protecting the control circuit.
[0015] Through the above methods, the protector can provide protection under overcurrent or abnormal conditions, improving the safety and reliability of the circuit.
[0016] Optionally, the field-effect transistor is a P-type MOSFET, an N-type MOSFET, a P-type bipolar junction transistor, or an N-type bipolar junction transistor.
[0017] By employing the above methods, the selection of field-effect transistors becomes more flexible, thus adapting to different design requirements and application scenarios and significantly reducing costs.
[0018] Optionally, the control circuit further includes a mode selection unit connected to the first terminal or the second terminal, for generating or receiving a mode selection signal inside the control circuit to select a current input mode or a voltage input mode.
[0019] By using the above methods and setting a mode selection unit, flexible switching between current input and voltage input can be achieved, thus expanding the circuit's functionality.
[0020] Optionally, the field-effect transistor circuit is further configured such that when the control circuit is in voltage input mode, the field-effect transistor circuit is in an open state, forming a high-impedance voltage detection path. The detection processing unit is used to detect the voltage between the first terminal and the second terminal.
[0021] By using the above method, high-impedance voltage detection is achieved by disconnecting the field-effect transistor circuit, ensuring the accuracy of voltage detection and the stability of the system.
[0022] Optionally, the detection and processing unit also includes multiple voltage divider resistors, with the two ends of the multiple voltage divider resistors connected to the input signal acquisition terminal and the field-effect transistor circuit, respectively, to form a high-impedance voltage detection path.
[0023] By using the above method, multiple voltage divider resistors are set up in conjunction with the field-effect transistor circuit to achieve high impedance detection of voltage signals, reducing the impact on external circuits and ensuring voltage detection accuracy. Attached Figure Description
[0024] Figure 1 This is a first circuit diagram of the control circuit in some embodiments.
[0025] Figure 2 This is a second circuit diagram of the control circuit in some embodiments.
[0026] Figure 3 This is a circuit diagram of the control circuit in an embodiment of the present invention.
[0027] Figure 4 This is a schematic diagram of the first current flow direction of the control circuit in an embodiment of this utility model.
[0028] Figure 5 This is a schematic diagram of the second current flow direction of the control circuit in an embodiment of the present invention.
[0029] Figure label: 100. Control circuit; 1. First terminal; 2. Second terminal; 3. Field-effect transistor circuit; 4. Detection and processing unit. Detailed Implementation
[0030] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0031] <Control Circuit 100> refer to Figure 3This utility model provides a control circuit 100 with bidirectional current input. The control circuit 100 includes a first terminal 1, a second terminal 2, a field-effect transistor (FET) circuit 3, and a detection and processing unit 4. The first terminal 1 and the second terminal 2 are external interface terminals, and the two ends of the FET circuit 3 are connected to the first terminal 1 and the second terminal 2, respectively. The FET circuit 3 can adopt a structure of multiple FETs connected in series, with the number of FETs being two (e.g., ...). Figure 3 (Q1 and Q2 shown). The field-effect transistor circuit 3 can change its conduction state according to the operating mode of the control circuit 100. When the control circuit 100 is in the current input mode, the field-effect transistor circuit 3 remains on, thereby forming a low-impedance current detection path between the first terminal 1 and the second terminal 2, so that the current can conduct bidirectionally between the first terminal 1 and the second terminal 2. At the same time, the detection and processing unit 4 in the control circuit 100 is electrically connected to the field-effect transistor circuit 3 and can detect and process the current flowing between the first terminal 1 and the second terminal 2.
[0032] In this manner, a field-effect transistor circuit 3 and a detection and processing unit 4 are arranged between the first terminal 1 and the second terminal 2. When the control circuit 100 is in current input mode, the field-effect transistor circuit 3 remains on, thereby achieving bidirectional current detection between the first terminal 1 and the second terminal 2. This simplifies the circuit structure and allows the control circuit 100 to adapt to more application scenarios. Simultaneously, the detection and processing unit 4 can detect and process the current flowing between the first terminal 1 and the second terminal 2, ensuring the accuracy of the current signal detection.
[0033] In some embodiments, the number of field-effect transistors can also be four. This invention does not limit the number of field-effect transistors.
[0034] The various components of the control circuit 100 in the embodiments of this utility model will be described in detail below.
[0035] <First terminal 1, Second terminal 2> like Figure 3 As shown, the first terminal 1 can correspond to AIN (i.e., signal input terminal), and the second terminal 2 can correspond to one side of AIN_GND (i.e., input reference terminal / common terminal) and COM (i.e., loop common terminal).
[0036] <Detection and Processing Unit 4> like Figure 3 As shown, the detection and processing unit 4 may include an input signal acquisition terminal CH and a shunt resistor R3. The two ends of the shunt resistor R3 are connected to the input signal acquisition terminal CH and the field-effect transistor circuit 3, respectively, to form a low-impedance current detection path.
[0037] This configuration utilizes the shunt resistor R3 to achieve precise current sampling, further enhancing the current detection accuracy of the detection and processing unit 4.
[0038] Continue to refer to Figure 3 The detection and processing unit 4 may also include multiple current detection amplification resistors, i.e. Figure 3 The resistors R4, R5, R6, and R7, which are connected in parallel, are used to amplify the current signal. They are located between the first terminal 1 and the field-effect transistor circuit 3.
[0039] By setting the current detection amplification resistors (i.e., R4, R5, R6, and R7) in the above manner, the amplitude of the current signal can be enhanced, which facilitates subsequent processing and improves the detection sensitivity.
[0040] <Field-Effect Transistor Circuit 3> like Figure 3 As shown, field-effect transistors Q1 and Q2 are N-type MOSFETs. In some embodiments, field-effect transistors Q1 and Q2 may also be P-type MOSFETs, P-type bipolar junction transistors, or N-type bipolar junction transistors.
[0041] By using the above methods, the selection of MOSFETs Q1 and Q2 becomes more flexible, thus adapting to different design requirements and application scenarios and significantly reducing costs.
[0042] <Protector D1> Continue to refer to Figure 3 The control circuit 100 also includes a protector D1, whose two ends are connected to the first terminal 1 and the second terminal 2 respectively, and is connected in parallel with the field-effect transistor circuit 3, for protecting the control circuit 100. With this configuration, the protector D1 can provide protection under overcurrent or abnormal conditions, improving the safety and reliability of the circuit.
[0043] <Mode Selection Unit V / I> like Figure 3 As shown, the control circuit 100 also includes a mode selection unit V / I, which is connected to the first terminal 1 or the second terminal 2, for generating or receiving a mode selection signal inside the control circuit 100 to select a current input mode or a voltage input mode.
[0044] By using the above methods and setting the mode selection unit V / I, flexible switching between current input and voltage input can be achieved, thus expanding the circuit functionality.
[0045] Correspondingly, the field-effect transistor circuit 3 is also configured such that when the control circuit 100 is in voltage input mode, the field-effect transistor circuit 3 is in an open state, forming a high-impedance voltage detection path. The detection processing unit 4 is used to detect the voltage between the first terminal 1 and the second terminal 2.
[0046] High-impedance voltage detection is achieved by disconnecting the field-effect transistor circuit 3, ensuring the accuracy of voltage detection and the stability of the system.
[0047] refer to Figure 3 The detection and processing unit 4 also includes multiple voltage divider resistors, which can be... Figure 3 The parallel resistors R1 and R2 are connected to the input signal acquisition terminal CH and the field-effect transistor circuit 3, respectively, to form a high-impedance voltage detection path.
[0048] In other words, by setting voltage divider resistors R1 and R2, and working with the field-effect transistor circuit 3, high impedance detection of the voltage signal is achieved, reducing the impact on external circuits and ensuring voltage detection accuracy.
[0049] In some embodiments, the number of voltage divider resistors can also be three arranged in parallel. This invention does not limit the number of voltage divider resistors.
[0050] refer to Figure 4 and Figure 5 The current flow direction of the control circuit 100 in the embodiment of this utility model will be described below.
[0051] like Figure 4 As shown, when the current input to the first terminal 1 is positive, the current flows sequentially through the first terminal 1, the mode selection unit V / I, the detection and processing unit 4, the field effect transistor circuit 3, and then to the second terminal 2.
[0052] like Figure 5 As shown, when the current input to the second terminal 2 is positive, the current flows sequentially through the second terminal 2, the field-effect transistor circuit 3, the detection and processing unit 4, the mode selection unit V / I, and then to the first terminal 1.
[0053] The above are merely preferred embodiments of the present utility model and are not intended to limit the present utility model. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.
Claims
1. A control circuit capable of bidirectional current input, characterized in that, The control circuit includes: First terminal; Second terminal; A field-effect transistor circuit, with its two ends connected to the first terminal and the second terminal respectively, the field-effect transistor circuit includes multiple field-effect transistors connected in series, the field-effect transistor circuit is configured such that when the control circuit is in the current input mode, the field-effect transistor circuit is in the conducting state and forms a low-impedance current detection path, so as to realize bidirectional conduction of current between the first terminal and the second terminal; The detection and processing unit is connected to the field-effect transistor circuit and is used to detect the current between the first terminal and the second terminal.
2. The control circuit with bidirectional current input according to claim 1, characterized in that, The detection processing unit includes: Input signal acquisition terminal; The shunt resistor is connected at both ends to the input signal acquisition terminal and the field-effect transistor circuit, respectively, to form the low-impedance current detection path.
3. The control circuit with bidirectional current input according to claim 2, characterized in that, The detection and processing unit further includes: A current sensing and amplification resistor is placed between the first terminal and the field-effect transistor circuit to amplify the current signal.
4. The control circuit with bidirectional current input according to claim 1, characterized in that, Also includes: The protector is connected at both ends to the first terminal and the second terminal respectively, and is connected in parallel with the field-effect transistor circuit to protect the control circuit.
5. The control circuit with bidirectional current input according to claim 1, characterized in that, The field-effect transistor is a P-type MOSFET, an N-type MOSFET, a P-type bipolar junction transistor, or an N-type bipolar junction transistor.
6. The control circuit with bidirectional current input according to claim 2, characterized in that, The control circuit also includes: A mode selection unit, connected to the first terminal or the second terminal, is used to generate or receive a mode selection signal from within the control circuit to select a current input mode or a voltage input mode.
7. The control circuit with bidirectional current input according to claim 6, characterized in that, The field-effect transistor circuit is further configured such that when the control circuit is in voltage input mode, the field-effect transistor circuit is in an open state and forms a high-impedance voltage detection path. The detection and processing unit is used to detect the voltage between the first terminal and the second terminal.
8. The control circuit with bidirectional current input according to claim 7, characterized in that, The detection and processing unit further includes: Multiple voltage divider resistors are connected at both ends to the input signal acquisition terminal and the field-effect transistor circuit, respectively, to form the high-impedance voltage detection path.