Power module, half-bridge power cell and three-phase full-bridge power cell

Abstract

The application discloses a power module, comprising: a printed circuit board, the printed circuit board comprising at least N layers of prefabricated layers, a power unit, the power unit being located in the i-th layer of prefabricated layers of the printed circuit board, the power unit comprising: a ceramic substrate, a first surface of the ceramic substrate covering a first metal layer, a second surface of the ceramic substrate covering a second metal layer, a power device, the power device being located on the first metal layer, the power device comprising a first electrode, a second electrode and a third electrode, the first electrode being electrically connected to the first metal layer, and the first metal layer further comprising a first lead-out part. The power unit provided by the application adopts a ceramic substrate+metal layer structure, cooperates with the conductive structure of the first surface of the power device, better matches the application of the embedded power module of the printed circuit board, has better reliability after being embedded in the printed circuit board, has lower inductance, ensures the switching characteristics of the power module, and reduces the oscillation of the switching voltage and current waveform.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a power module. Background Technology

[0002] In the field of power electronics, traditional power modules (such as IGBT and MOSFET modules) typically use discrete components soldered onto the surface of a printed circuit board or achieve electrical connections through wire bonding.

[0003] Existing power modules typically suffer from problems such as high stray inductance, high thermal resistance, and current waveform susceptibility to oscillations, making them unsuitable for high-frequency, high-density applications. This led to the development of embedded power modules. However, embedded power modules generally have a large number of prefabricated layers, are bulky, costly, and subject to high pressure and poor flatness during PCB lamination, resulting in low production yields. Furthermore, they are prone to damage to power devices during embedding. Utility Model Content

[0004] In view of the above problems, the purpose of this utility model is to provide a power module with low inductance, excellent performance, flexible configuration, high flatness and high yield.

[0005] This application provides a power module, including: A printed circuit board includes at least N prefabricated layers. Each prefabricated layer includes an insulating layer and a conductive structure. Adjacent prefabricated layers are isolated by the insulating layer and connected sequentially by the conductive structure. The first to Nth prefabricated layers are arranged sequentially from top to bottom, where N is a positive integer. Power units are located within the i-th prefabricated layer of the printed circuit board, where 1 ≤ i ≤ N, and i is a positive integer. A power unit includes: A ceramic substrate, wherein a first surface of the ceramic substrate is covered with a first metal layer, a second surface of the ceramic substrate is covered with a second metal layer, and the first and second surfaces of the ceramic substrate are opposite to each other; A power device is located on a first metal layer of a ceramic substrate. The power device includes a first electrode, a second electrode, and a third electrode. The first electrode is electrically connected to the first metal layer. The electrical signals from the first, second, and third electrodes are led out through their respective prefabrication layers.

[0006] Preferably, the power unit is located within the i-th prefabricated layer of the printed circuit board, where 2≤i≤N.

[0007] Preferably, the power device is located on the first metal layer of the ceramic substrate, and the first metal layer of the ceramic substrate is located on the insulating layer of the ceramic substrate.

[0008] Preferably, the power unit is located in the Nth prefabricated layer.

[0009] Preferably, the first metal layer further includes a first lead-out portion, through which the electrical signal of the first electrode is led out through the first lead-out portion or the conductive structure corresponding to the first electrode through the corresponding prefabricated layer.

[0010] Preferably, the first electrode and the second electrode are led out from the same side of the power unit.

[0011] Preferably, the first electrode, the second electrode, and the third electrode are led out from the same side of the power unit.

[0012] Preferably, the first lead-out portion serves as the first terminal of the power unit, the second electrode serves as the second terminal of the power unit, and the third electrode serves as the third terminal of the power unit.

[0013] Preferably, the second electrode further includes a second lead-out portion, which serves as the second terminal of the power unit.

[0014] Preferably, the third electrode further includes a third lead-out portion, which serves as the third terminal of the power unit.

[0015] Preferably, the first electrode is connected to the first metal layer through a connecting layer.

[0016] Preferably, the bonding layer is one of the following: a brazing solder layer, a sintered silver layer, a sintered copper layer, or a eutectic solder layer.

[0017] Preferably, the ceramic substrate and the first metal layer are connected by one of a hot-melt layer, a brazing layer, and a sintering layer; the ceramic substrate and the second metal layer are connected by one of a hot-melt layer, a brazing layer, and a sintering layer.

[0018] Preferably, the tops of the first lead-out portion, the second electrode, and the third electrode are coplanar within + / -30 μm.

[0019] Preferably, the tops of the first lead-out portion, the second electrode, and the third electrode are flush.

[0020] Preferably, the tops of the first lead-out portion, the second lead-out portion, and the third lead-out portion are coplanar within + / -30 μm.

[0021] Preferably, the tops of the first lead-out portion, the second lead-out portion, and the third lead-out portion are flush.

[0022] Preferably, the second lead-out portion consists of m elements, where m is a positive integer greater than or equal to 1.

[0023] Preferably, the first lead-out portion has n parts, where n is a positive integer greater than or equal to 1.

[0024] Preferably, the third lead-out portion consists of h elements, where h is a positive integer greater than or equal to 1.

[0025] Preferably, there are several power devices, each located on an independent first metal layer, arranged in an array of j rows and k columns, where j is a positive integer greater than or equal to 1 and k is a positive integer greater than or equal to 1.

[0026] Preferably, the first lead-out portion and the first metal layer are an integral structure.

[0027] Preferably, the first lead-out portion and the first metal layer are connected by one of the following: a solder layer, a sintered silver layer, a sintered copper layer, and a eutectic solder layer.

[0028] Preferably, the second lead and the second electrode are connected by one of a solder layer, a sintered silver layer, a sintered copper layer, and a eutectic solder layer, and the third lead and the third electrode are connected by one of a solder layer, a sintered silver layer, a sintered copper layer, and a eutectic solder layer.

[0029] Preferably, the second lead-out portion is an electroplated second lead-out portion, and the third lead-out portion is an electroplated third lead-out portion.

[0030] Preferably, the first lead-out portion includes a first part and a second part, the first part and the second part of the first lead-out portion are bent structures, and the distance from the first part of the first lead-out portion to the second lead-out portion is less than the distance from the second part of the first lead-out portion to the second lead-out portion.

[0031] Preferably, the power unit further includes a molding compound that encapsulates the power device, the ceramic substrate, and the first lead-out portion; The first lead-out portion extends from the encapsulation body as the first terminal of the power unit, the second electrode extends from the encapsulation body as the second terminal of the power unit, the third electrode extends from the encapsulation body as the third terminal of the power unit, and the second metal layer extends from the encapsulation body.

[0032] Preferably, the power unit further includes a potting compound that covers the power device, the ceramic substrate, and the first lead-out portion; The first lead-out portion extends from the potting compound as the first terminal of the power unit, the second electrode extends from the potting compound as the second terminal of the power unit, the third electrode extends from the potting compound as the third terminal of the power unit, and the second metal layer extends from the potting compound.

[0033] Preferably, the encapsulated body is provided with an anti-reverse marking.

[0034] Preferably, the glue is provided with anti-reverse markings.

[0035] Preferably, the encapsulated body is provided with a clamping structure located on the side wall of the encapsulated body.

[0036] Preferably, the glue body is provided with a clamping structure, which is located on the side wall of the glue body.

[0037] Preferably, there is no plastic encapsulation between the power unit and the printed circuit board.

[0038] Preferably, there is no potting compound between the power unit and the printed circuit board.

[0039] Preferably, the power device includes a metal-oxide-semiconductor field-effect transistor, an insulated-gate field-effect transistor, or a high electron mobility transistor.

[0040] Preferably, when the power device is an insulated-gate field-effect transistor, the first terminal of the power device is the drain terminal, the second terminal of the power device is the gate terminal, and the third terminal of the power device is the source terminal; or the first terminal of the power device is the drain terminal, the second terminal of the power device is the source terminal, and the third terminal of the power device is the gate terminal.

[0041] Preferably, the power device is a metal-oxide-semiconductor field-effect transistor, the first terminal of the power device is the collector terminal, the second terminal of the power device is the base terminal, and the third terminal of the power device is the emitter terminal; or the first terminal of the power device is the collector terminal, the second terminal of the power device is the emitter terminal, and the third terminal of the power device is the base terminal.

[0042] Preferably, the prefabricated layer further includes a conductive region, and the first electrode, the second electrode, and the third electrode are electrically connected to the conductive region of the corresponding prefabricated layer.

[0043] Preferably, a half-bridge power unit includes an upper bridge power unit and a lower bridge power unit.

[0044] Preferably, a three-phase full-bridge power unit includes three half-bridge power units.

[0045] The power unit provided in this application is located within the i-th prefabricated layer of the printed circuit board. The power device in the power unit is located on the first metal layer of the ceramic substrate. The power device includes a first electrode, a second electrode, and a third electrode. The first electrode is electrically connected to the first metal layer. The electrical signals of the first, second, and third electrodes are respectively led out through the corresponding prefabricated layers. The power module provided in this application adopts a printed circuit board embedded structure, which has lower noise inductance, ensures the switching characteristics of the power module, and reduces the oscillation of switching voltage and current waveforms. The power unit of the power module in this application uses a ceramic substrate, and the power device is located on the first metal layer of the ceramic substrate. The first metal layer of the ceramic substrate is located on the insulating layer of the ceramic substrate. Thus, the power unit can be located in the N-th prefabricated layer, or it can be located in the second to N-th prefabricated layers. The power unit is located within the i-th prefabricated layer of the printed circuit board, where 2≤i≤N. The position of the power unit in the prefabricated layer of the printed circuit board is flexible, thereby saving prefabricated layers, simplifying the processing steps, saving costs, reducing the pressure on the power device during the lamination of the printed circuit board, and improving the production yield of the power module.

[0046] The power unit provided in this application also includes a molding compound or a potting compound. A first lead extends from the molding compound or potting compound as a first terminal of the power unit, a second electrode extends from the potting compound as a second terminal of the power unit, a third electrode extends from the potting compound as a third terminal of the power unit, and a second metal layer extends from the potting compound. The molding compound or potting compound allows for processing of the front and back sides of the power unit, thereby making the tops of the first, second, and third leads flush, achieving higher flatness and thickness accuracy of the power unit.

[0047] Furthermore, the molding compound or potting compound can effectively protect the power unit and prevent damage during embedding. In addition, the introduction of the molding compound or potting compound allows for a high degree of freedom in the shape and structure of the power unit, enabling the design of various structures to match positioning, anti-reverse, and clamping applications. This facilitates embedding into the printed circuit board. Moreover, the molding compound or potting compound can be removed by heating, solvent treatment, or other methods, while still maintaining the flatness and thickness accuracy of the power unit. Attached Figure Description

[0048] The above and other objects, features and advantages of this application will become clearer from the following description of embodiments with reference to the accompanying drawings, in which: Figure 1 A schematic diagram of the power module according to the first embodiment of this application is shown; Figure 2 A schematic diagram of the power unit in the power module of the first embodiment of this application is shown; Figure 3 A schematic diagram of the power unit according to the second embodiment of this application is shown; Figure 4 A schematic diagram of the power unit according to the third embodiment of this application is shown; Figure 5 A schematic diagram of the power unit according to the fourth embodiment of this application is shown; Figure 6 A schematic diagram of the power unit according to the fifth embodiment of this application is shown; Figure 7 A schematic diagram of the power unit according to the sixth embodiment of this application is shown; Figure 8 This diagram illustrates the process of removing the encapsulation in this application. Figure 9 A schematic diagram of the power module according to the seventh embodiment of this application is shown; Figures 10a to 10d Schematic diagrams of different structures of the encapsulated body of this application are shown; Detailed Implementation

[0049] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application may be implemented in various forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a thorough and complete understanding of the disclosure of this application.

[0050] Various embodiments of the present application will now be described in more detail with reference to the accompanying drawings. In the various drawings, the same elements are indicated by the same or similar reference numerals. For clarity, the various parts in the drawings are not drawn to scale.

[0051] The present application will be further described below with reference to the accompanying drawings and embodiments.

[0052] like Figure 1 As shown, this application provides a power module and a method for manufacturing the same, comprising: A printed circuit board includes at least N prefabricated layers. Each prefabricated layer includes an insulating layer and a conductive structure. Adjacent prefabricated layers are isolated by the insulating layer and connected sequentially by the conductive structure. The first prefabricated layer M-1 to the Nth prefabricated layer Mn are arranged sequentially from top to bottom, where N is a positive integer. Power unit 100, the power unit is located in the i-th prefabricated layer of the printed circuit board, 1≤i≤N, where i is a positive integer; like Figures 1 to 9 As shown, the power unit 100 includes: A ceramic substrate 101 has a first surface covered with a first metal layer 102 and a second surface covered with a second metal layer 103. The first and second surfaces of the ceramic substrate 101 are opposite to each other. Power device 200, the power device is located on the first metal layer 102 of ceramic substrate 101, each power device 200 includes a first electrode 201, a second electrode 202 and a third electrode 203, the first electrode 201 is electrically connected to the first metal layer 102; like Figure 1 As shown, the electrical signals of the first electrode 201, the second electrode 202, and the third electrode 203 are led out through their respective prefabrication layers.

[0053] like Figure 1 As shown, the power unit 100 is located in the i-th prefabricated layer of the printed circuit board, where 2≤i≤N.

[0054] Furthermore, the power device 200 is located on the first metal layer 102 of the ceramic substrate 101, and the first metal layer 102 of the ceramic substrate 101 is located on the insulating layer of the ceramic substrate 101. This allows the power unit 100 to be located in the Nth prefabricated layer Mn, or in the second prefabricated layer M-2 to the Nth prefabricated layer Mn. The power unit 100 is located within the i-th prefabricated layer Mi of the printed circuit board. The position of the power unit 100 in the prefabricated layer of the printed circuit board is flexible, thereby saving prefabricated layers, simplifying the processing steps, saving costs, reducing the pressure on the power device 200 during the lamination of the printed circuit board, and improving the production yield of the power module.

[0055] like Figure 1 As shown, the first metal layer also includes a first lead-out portion 301, through which the electrical signal of the first electrode 201 is led out through the first lead-out portion 301 or the conductive structure corresponding to the first electrode 201 via the corresponding prefabricated layer. For example... Figure 1 As shown, the first electrode 201 and the second electrode 202 are led out from the same side of the power unit 100.

[0056] Furthermore, the first electrode 201 and the second electrode 202 are led out from the same side of the power unit 100.

[0057] Furthermore, the first electrode 201, the second electrode 202, and the third electrode 203 are led out from the same side of the power unit 100.

[0058] like Figure 3 As shown, the second electrode 202 also includes a second lead-out portion 302, and the third electrode 203 also includes a third lead-out portion 303. The second lead-out portion 303 serves as the second terminal of the power unit 100, and the third lead-out portion 303 serves as the third terminal of the power unit 100.

[0059] like Figure 5 As shown, the first electrode is connected to the first metal layer 102 through the connection layer 401, which is one of the following: a solder layer, a sintered silver layer, a sintered copper layer, or a eutectic solder layer.

[0060] The ceramic substrate 101 and the first metal layer 102 are connected by one of a hot-melt layer, a brazing layer, and a sintering layer. The ceramic substrate 101 and the second metal layer 103 are connected by one of a hot-melt layer, a brazing layer, and a sintering layer, which are not shown in the figure.

[0061] like Figure 1 , Figures 2 to 8 As shown, the tops of the first lead-out portion 301, the second electrode 202, and the third electrode 203 are coplanar within + / -30μm.

[0062] Furthermore, the tops of the first lead-out portion 301, the second electrode 202, and the third electrode 203 are flush.

[0063] like Figure 3 As shown, the top of the first lead-out portion 301, the second lead-out portion 302, and the third lead-out portion 303 are coplanar within + / -30μm.

[0064] Furthermore, the tops of the first lead-out section 301, the second lead-out section 302, and the third lead-out section 303 are flush.

[0065] like Figure 4 As shown, the second lead-out section 302 is divided into m parts, where m is a positive integer greater than or equal to 1.

[0066] Furthermore, there are n first leading-out parts 301 and h third leading-out parts 303, where n is a positive integer greater than or equal to 1 and h is a positive integer greater than or equal to 1.

[0067] Furthermore, there are several power devices 200, each located on an independent first metal layer 102. The power devices 200 are arranged in an array of j rows and k columns, where j is a positive integer greater than or equal to 1 and k is a positive integer greater than or equal to 1.

[0068] like Figures 1 to 8 As shown, the first lead-out portion 301 and the first metal layer 102 are an integral structure.

[0069] The first lead-out portion 301 and the first metal layer 102 are connected by one of the following: a solder layer, a sintered silver layer, a sintered copper layer, or a eutectic solder layer.

[0070] Furthermore, the second lead-out portion 302 and the second electrode 202 are connected by one of a solder layer, a sintered silver layer, a sintered copper layer, or a eutectic solder layer, and the third lead-out portion 303 and the third electrode 203 are connected by one of a solder layer, a sintered silver layer, a sintered copper layer, or a eutectic solder layer. Furthermore, the second lead-out section 202 is an electroplated second lead-out section, and the third lead-out section 203 is an electroplated third lead-out section.

[0071] like Figure 5 As shown, the first lead-out portion 301 includes a first part 301-1 and a second part 301-2. The first part 301-1 and the second part 301-2 of the first lead-out portion are bent structures. The distance from the first part 201-1 of the first lead-out portion to the second lead-out portion 202 is less than the distance from the second part 201-2 of the first lead-out portion to the second lead-out portion 202.

[0072] like Figure 7 , Figure 9 As shown, the power unit 100 also includes a molding compound 400, which encapsulates the power device 200, the ceramic substrate 101, and the first lead-out portion 301. The first lead-out portion 301 extends from the encapsulation body 400 as the first terminal of the power unit 100, the second electrode 202 extends from the encapsulation body 300 as the second terminal of the power unit 100, the third electrode 203 extends from the encapsulation body 300 as the third terminal of the power unit 100, and the second metal layer 103 extends from the encapsulation body 300.

[0073] The power unit 100 also includes a potting compound (not shown in the figure), which covers the power device 200, the ceramic substrate 101 and the first lead-out portion 301; The first lead-out portion 301 extends from the potting compound as the first terminal of the power unit 100, the second electrode 202 extends from the potting compound as the second terminal of the power unit 100, the third electrode 203 extends from the potting compound as the third terminal of the power unit 100, and the second metal layer 103 extends from the potting compound. The front and back sides of the power unit 100 can be processed using the encapsulation body 300 or the potting compound, thereby making the tops of the first lead-out portion 301, the second lead-out portion 302, and the third lead-out portion 303 flush, achieving higher flatness and thickness accuracy of the power unit 100.

[0074] Furthermore, the molding compound 300 or the potting compound is provided with an anti-reverse mark 304; the molding compound 300 or the potting compound is provided with a clamping structure 305, the clamping structure 305 being located on the side wall of the molding compound 300 or the potting compound; furthermore, the molding compound 300 or the potting compound can effectively protect the power unit 100, avoiding damage during embedding, and the introduction of the molding compound 300 or the potting compound allows for a high degree of freedom in the external structure of the power unit 100, enabling the design of various structures to match positioning, anti-reverse, and clamping structural applications, facilitating embedding into the printed circuit board.

[0075] like Figure 8 As shown, the molding compound 300 or potting compound can be removed by heating, solvent treatment, etc., while retaining the flatness and thickness accuracy of the power unit after removing the molding compound. There is no molding compound between the power unit 100 and the printed circuit board, or there is no potting compound between the power unit 100 and the printed circuit board.

[0076] like Figures 1 to 9 As shown, the power device 200 includes, but is not limited to, silicon carbide metal oxide semiconductor field-effect transistors, insulated gate field-effect transistors, freewheeling diodes, and high electron mobility transistors.

[0077] like Figures 1 to 9As shown, when the power device 200 is an insulated-gate field-effect transistor, the first terminal of the power device 200 is the drain terminal, the second terminal of the power device 200 is the gate terminal, and the third terminal of the power device 200 is the source terminal; or the first terminal of the power device 200 is the drain terminal, the second terminal of the power device 200 is the source terminal, and the third terminal of the power device 200 is the gate terminal.

[0078] like Figures 1 to 9 As shown, the power device 200 is a metal-oxide-semiconductor field-effect transistor. The first terminal of the power device is the collector terminal, the second terminal of the power device is the base terminal, and the third terminal of the power device is the emitter terminal; or the first terminal of the power device is the collector terminal, the second terminal of the power device is the emitter terminal, and the third terminal of the power device is the base terminal.

[0079] The prefabricated layer also includes conductive areas (not shown in the figure), and the first electrode 201, the second electrode 202 and the third electrode 203 are electrically connected to the conductive areas of the corresponding prefabricated layer.

[0080] This application also provides a half-bridge power unit, including an upper bridge power unit and a lower bridge power unit, wherein the upper bridge power unit and / or the lower bridge power unit are the power units provided in this application.

[0081] This application also provides a three-phase full-bridge power unit, including three half-bridge power units provided in this application. As described above, these embodiments of the present application do not exhaustively describe all details, nor do they limit the application to only the specific embodiments described. Clearly, many modifications and variations can be made based on the above description. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the present application, thereby enabling those skilled in the art to make good use of the present application and modifications based on it. The present application is limited only by the claims and their full scope and equivalents.

Claims

1. A power module, characterized in that, include: A printed circuit board, the printed circuit board comprising at least N prefabricated layers, each prefabricated layer comprising an insulating layer and a conductive structure, adjacent prefabricated layers being isolated by an insulating layer and sequentially connected by a conductive structure, the first to the Nth prefabricated layers being arranged sequentially from top to bottom, where N is a positive integer; A power unit, located within the i-th prefabricated layer of the printed circuit board, wherein 1 ≤ i ≤ N, and i is a positive integer, comprises: A ceramic substrate, wherein a first surface of the ceramic substrate is covered with a first metal layer, a second surface of the ceramic substrate is covered with a second metal layer, and the first and second surfaces of the ceramic substrate are opposite to each other; A power device is located on a first metal layer of the ceramic substrate. The power device includes a first electrode, a second electrode, and a third electrode, wherein the first electrode is electrically connected to the first metal layer. The electrical signals of the first electrode, the second electrode, and the third electrode are respectively led out through the corresponding prefabrication layer.

2. The power module according to claim 1, characterized in that, The power unit is located in the i-th prefabricated layer of the printed circuit board, where 2≤i≤N.

3. The power module according to claim 2, characterized in that, The power device is located on the first metal layer of the ceramic substrate, and the first metal layer of the ceramic substrate is located on the insulating layer of the ceramic substrate.

4. The power module according to claim 3, characterized in that, The power unit is located in the Nth prefabricated layer.

5. The power module according to claim 3, characterized in that, The first metal layer further includes a first lead-out portion, through which the electrical signal of the first electrode is led out through the corresponding prefabricated layer via the first lead-out portion or the conductive structure corresponding to the first electrode.

6. The power module according to claim 3, characterized in that, The first electrode and the second electrode are led out from the same side of the power unit.

7. The power module according to claim 3, characterized in that, The first electrode, the second electrode, and the third electrode are led out from the same side of the power unit.

8. The power module according to claim 5, characterized in that, The first lead-out portion serves as the first terminal of the power unit, the second electrode serves as the second terminal of the power unit, and the third electrode serves as the third terminal of the power unit.

9. The power module according to claim 5, characterized in that, The second electrode further includes a second lead-out portion, which serves as the second terminal of the power unit.

10. The power module according to claim 9, characterized in that, The third electrode also includes a third lead-out portion, which serves as the third terminal of the power unit.

11. The power module according to claim 3, characterized in that, The first electrode is connected to the first metal layer through a bonding layer.

12. The power module according to claim 11, characterized in that, The connecting layer is one of the following: a brazing solder layer, a sintered silver layer, a sintered copper layer, or a eutectic solder layer.

13. The power module according to claim 3, characterized in that, The ceramic substrate and the first metal layer are connected by one of a hot-melt layer, a brazing layer, or a sintered layer; the ceramic substrate and the second metal layer are connected by one of a hot-melt layer, a brazing layer, or a sintered layer.

14. The power module according to claim 8, characterized in that, The tops of the first lead-out portion, the second electrode, and the third electrode are coplanar within + / -30 μm.

15. The power module according to claim 14, characterized in that, The tops of the first lead-out portion, the second electrode, and the third electrode are flush.

16. The power module according to claim 10, characterized in that, The tops of the first lead-out portion, the second lead-out portion, and the third lead-out portion are coplanar within + / -30 μm.

17. The power module according to claim 16, characterized in that, The tops of the first lead-out portion, the second lead-out portion, and the third lead-out portion are flush.

18. The power module according to claim 9, characterized in that, The second lead-out portion consists of m elements, where m is a positive integer greater than or equal to 1.

19. The power module according to claim 5, characterized in that, The first lead-out portion consists of n parts, where n is a positive integer greater than or equal to 1.

20. The power module according to claim 10, characterized in that, The third lead-out portion consists of h elements, where h is a positive integer greater than or equal to 1.

21. The power module according to claim 1, characterized in that, The power devices are a plurality of each power device located on an independent first metal layer. The plurality of power devices are arranged in an array of j rows and k columns, where j is a positive integer greater than or equal to 1 and k is a positive integer greater than or equal to 1.

22. The power module according to claim 5, characterized in that, The first lead-out portion and the first metal layer are an integral structure.

23. The power module according to claim 5, characterized in that, The first lead-out portion and the first metal layer are connected by one of the following: a solder layer, a sintered silver layer, a sintered copper layer, or a eutectic solder layer.

24. The power module according to claim 10, characterized in that, The second lead and the second electrode are connected by one of a solder layer, a sintered silver layer, a sintered copper layer, or a eutectic solder layer, and the third lead and the third electrode are connected by one of a solder layer, a sintered silver layer, a sintered copper layer, or a eutectic solder layer.

25. The power module according to claim 10, characterized in that, The second lead-out portion is an electroplated second lead-out portion, and the third lead-out portion is an electroplated third lead-out portion.

26. The power module according to claim 5, characterized in that, The first lead-out portion includes a first part and a second part. The first part and the second part of the first lead-out portion are bent structures. The distance from the first part of the first lead-out portion to the second lead-out portion is less than the distance from the second part of the first lead-out portion to the second lead-out portion.

27. The power module according to claim 5, characterized in that, The power unit further includes a molding compound that encapsulates the power device, the ceramic substrate, and the first lead-out portion. The first lead-out portion extends from the encapsulation body as the first terminal of the power unit, the second electrode extends from the encapsulation body as the second terminal of the power unit, the third electrode extends from the encapsulation body as the third terminal of the power unit, and the second metal layer extends from the encapsulation body.

28. The power module according to claim 5, characterized in that, The power unit further includes a potting compound that covers the power device, the ceramic substrate, and the first lead-out portion. The first lead-out portion extends from the potting compound as the first terminal of the power unit, the second electrode extends from the potting compound as the second terminal of the power unit, the third electrode extends from the potting compound as the third terminal of the power unit, and the second metal layer extends from the potting compound.

29. The power module according to claim 27, characterized in that, The encapsulated body is equipped with anti-reverse markings.

30. The power module according to claim 28, characterized in that, The potting compound is equipped with anti-reverse markings.

31. The power module according to claim 27, characterized in that, The encapsulation body is provided with a clamping structure, which is located on the side wall of the encapsulation body.

32. The power module according to claim 28, characterized in that, The potting body is provided with a clamping structure, which is located on the side wall of the potting body.

33. The power module according to claim 1, characterized in that, There is no plastic encapsulation between the power unit and the printed circuit board.

34. The power module according to claim 1, characterized in that, There is no potting compound between the power unit and the printed circuit board.

35. The power module according to claim 1, characterized in that, The power devices include metal-oxide-semiconductor field-effect transistors, insulated-gate field-effect transistors, and high electron mobility transistors.

36. The power module according to claim 35, characterized in that, The power device is an insulated-gate field-effect transistor, the first terminal of the power device is the drain terminal, the second terminal of the power device is the gate terminal, and the third terminal of the power device is the source terminal; or the first terminal of the power device is the drain terminal, the second terminal of the power device is the source terminal, and the third terminal of the power device is the gate terminal.

37. The power module according to claim 35, characterized in that, The power device is a metal-oxide-semiconductor field-effect transistor (MOSFET), wherein the first terminal of the power device is a collector terminal, the second terminal of the power device is a base terminal, and the third terminal of the power device is an emitter terminal; or the first terminal of the power device is a collector terminal, the second terminal of the power device is an emitter terminal, and the third terminal of the power device is a base terminal.

38. The power module according to claim 1, characterized in that, The prefabricated layer also includes a conductive region, and the first electrode, the second electrode, and the third electrode are electrically connected to the conductive region of the corresponding prefabricated layer.

39. A half-bridge power unit, characterized in that, The half-bridge power unit includes an upper bridge power unit and a lower bridge power unit, wherein the upper bridge power unit and / or the lower bridge power unit is the power module described in any one of claims 1 to 38.

40. A three-phase full-bridge power unit, characterized in that, The three-phase full-bridge power unit includes three half-bridge power units, and the half-bridge power unit is the half-bridge power unit as described in claim 39.

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