Silicon wafer carrier and silicon wafer testing apparatus

Abstract

The embodiment of the present application provides a kind of silicon wafer bearing device and testing device, silicon wafer bearing device includes: two oppositely arranged side plates;First support rod, across between two the side plate, and located two the side plate first end, first support rod is equipped with multiple first drainage hole;Second support rod, across between two the side plate, and located two the side plate second end, the second support rod is used to support silicon wafer;In the case where the first support rod and the second support rod are placed with silicon wafer, each first drainage hole corresponds with the end of a silicon wafer.When silicon wafer bearing device is put into environmental simulation box, acetic acid steam is condensed into liquid state in the part of lower temperature such as support rod, first drainage hole corresponds with the end of silicon wafer, so that acetic acid liquid can be effectively guided to drain, so as to avoid its accumulation in the end of silicon wafer to cause to flow to the surface of silicon wafer, influence the testing precision of silicon wafer.

Description

Technical Field

[0001] This application belongs to the field of photovoltaic cell technology, and in particular relates to a silicon wafer support device and a silicon wafer testing device. Background Technology

[0002] After solar cells are encapsulated from silicon wafers to modules, prolonged exposure to the environment causes the encapsulant film to degrade, producing acetic acid. This can corrode the grid lines of the silicon wafer, affecting the module's power output. Therefore, it is necessary to include acetic acid corrosion resistance as one of the reliability testing indicators for photovoltaic products.

[0003] The existing testing process usually involves placing the silicon wafer in a carrier device (also known as a basket) and then placing it in an environmental chamber to simulate an acetic acid environment for testing. However, during this process, the acetic acid vapor in the environmental chamber can easily adhere to the carrier device and liquefy to form liquid acetic acid, which then flows along the direction of gravity to the surface of the silicon wafer, causing significant corrosion to the surface of the silicon wafer. This leads to significant errors in the degree of corrosion at the edges of the silicon wafer, affecting the accuracy of the test results.

[0004] It should be noted that the above content is not necessarily prior art, nor is it intended to limit the scope of patent protection of this application. Utility Model Content

[0005] This application provides a silicon wafer carrier device and a silicon wafer testing device to solve or alleviate one or more technical problems in the prior art.

[0006] The first aspect of this application provides a silicon wafer carrier device, comprising: Two side panels positioned opposite each other; A first support rod is connected between the two side plates and located at the first end of the two side plates. The first support rod is provided with a plurality of first drainage holes. The second support rod spans between the two side plates and is located at the second end of the two side plates. The second support rod is used to support the silicon wafer. In the case where a silicon wafer is placed between the first support rod and the second support rod, each of the first drainage holes corresponds to the end of a silicon wafer.

[0007] Optionally, the first drainage hole includes a first opening and a second opening that are connected. The first opening is located on the side of the first support rod closest to the silicon wafer; The second opening is located on the side of the first support rod away from the silicon wafer; The diameter of the first opening is larger than the diameter of the second opening, and the diameter of the first opening is also larger than the thickness of the silicon wafer.

[0008] Optionally, the second support rod is further provided with a plurality of second drainage holes, which correspond to a plurality of first drainage holes.

[0009] Optionally, the second drainage hole includes a third opening and a fourth opening; The third opening is located on the side of the second support rod closer to the silicon wafer; The fourth opening is located on the side of the second support rod away from the silicon wafer; The diameter of the third opening is smaller than the diameter of the fourth opening.

[0010] Optionally, there are two second support rods, which are spaced apart and are equidistant from the second end of the side plate.

[0011] Optionally, the first support rod is provided with a plurality of first slots, and each first slot has a first drainage hole on its bottom wall. The first slot is used to accommodate the end of the silicon wafer.

[0012] Optionally, the first support rod is provided with a first hydrophobic layer on the side facing the second support rod.

[0013] A second aspect of this application provides a silicon wafer testing apparatus, comprising: An environmental chamber for housing the silicon wafer carrier device described in any of the above-mentioned items; A container for holding the test liquid is located inside the environmental chamber; A heater is used to heat the containment tank to convert the test liquid in the containment tank into a gaseous state, thereby creating a preset atmosphere in the environmental chamber.

[0014] Optionally, one or more positioning holes are provided on the side of the two side plates that are far apart from each other; The environmental chamber has protrusions on its two opposite inner walls that correspond to the positioning holes. The distance between the protrusions and the receiving groove is greater than the height of the silicon wafer carrier. The bump is used to engage with the corresponding positioning hole so that the silicon wafer carrier is suspended above the receiving groove.

[0015] Optionally, it also includes a partition located above the silicon wafer support device inside the environmental chamber, the partition having a plurality of evenly distributed air holes.

[0016] The embodiments of this application employing the above-described technical solution may have the following advantages: The silicon wafer support device of this application embodiment can be placed entirely inside an environmental simulation chamber to simulate a corrosive environment containing acetic acid vapor. When the silicon wafer support device is placed in the environmental simulation chamber, the acetic acid vapor condenses into a liquid state at lower temperatures, such as on the support rod. The first drainage hole corresponds to the end of the silicon wafer, thereby effectively guiding the liquid acetic acid downwards and preventing it from accumulating at the end of the silicon wafer and flowing onto the surface of the silicon wafer, which would affect the testing accuracy of the silicon wafer.

[0017] The above overview is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features of this application will become readily apparent from the accompanying drawings and the following detailed description. Attached Figure Description

[0018] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the various drawings denote the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings depict only some embodiments disclosed in this application and should not be construed as limiting the scope of this application.

[0019] Figure 1 This is a schematic diagram of the structure of a silicon wafer carrier device according to an embodiment of this application; Figure 2 This is a schematic diagram of the silicon wafer testing apparatus according to an embodiment of this application; Figure 3 The silicon wafers used were made with standard flower baskets and underwent acid resistance testing; Figure 4 The silicon wafer is a silicon wafer that has undergone an acid resistance test using the silicon wafer carrier device of the present application embodiment.

[0020] Explanation of reference numerals in the attached figures: First support rod 11; second support rod 12; side plate 13; positioning hole 131; first drainage hole 111; first slot 115; second drainage hole 121; second slot 125; silicon wafer 30; environmental chamber 21; bump 211; receiving groove 22; heater 23; partition 24; air hole 241; air guide pipe 25; heat circulation assembly 26; temperature and humidity controller 27; temperature setting device 28. Detailed Implementation

[0021] The embodiments of this application are described in detail below, examples of which are illustrated in the accompanying drawings. In the drawings, for clarity, the dimensions of layers, regions, elements, and their relative dimensions may be exaggerated. The same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0022] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this application.

[0023] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0024] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0025] In this application, when numerical intervals (i.e., numerical ranges) are involved, unless otherwise specified, the distribution of selectable numerical values ​​within the numerical interval is considered continuous, and includes the two endpoints of the numerical interval (i.e., the minimum and maximum values), as well as every numerical value between these two endpoints. Unless otherwise specified, when a numerical interval refers only to integers within that numerical interval, it includes the two endpoint integers of the numerical range, as well as every integer between the two endpoints, which is equivalent to directly listing every integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical ranges disclosed in this application should be understood to include any and all subranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, percentage, ratio, etc. The term "numerical interval" can be broadly included to include percentage intervals, ratio intervals, proportion intervals, etc.

[0026] This application provides a silicon wafer 30 support device and a silicon wafer 30 testing device. This aims to alleviate the problem of accuracy deviation in the testing results of the silicon wafer 30. Details are provided below.

[0027] Exemplary embodiments according to this application will now be described in more detail with reference to the accompanying drawings. It should be understood that these exemplary embodiments may be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein.

[0028] Please see Figure 1 This application provides a silicon wafer 30 support device, which includes a side plate 13, a first support rod 11, and a second support rod 12. The following is a detailed description: The two side plates 13 are arranged opposite each other to provide the basic support structure of the device and define the placement area of ​​the silicon wafer 30, so that the silicon wafer 30 maintains a stable posture during environmental simulation.

[0029] A first support rod 11 spans between the two side plates 13 and is located at the first end of the two side plates 13. The first support rod 11 is provided with a plurality of first drainage holes 111. The first support rod 11 can limit one end of the silicon wafer 30. When the silicon wafer 30 is placed between the first support rod 11 and the second support rod 12, each first drainage hole 111 corresponds to the end of a silicon wafer 30. When liquid acetic acid condenses on the surface of the first support rod 11, the liquid acetic acid can be drained away through the first drainage holes 111 on the first support rod 11, preventing the liquid acetic acid from accumulating at the end of the silicon wafer 30.

[0030] The second support rod 12 spans between the two side plates 13 and is located at the second end of the two side plates 13. The second support rod 12 is used to support the silicon wafer 30. The second support rod 12 can limit the other end of the silicon wafer 30 and cooperate with the first support rod 11 to form a stable support structure.

[0031] The silicon wafer 30 support device of this embodiment can be placed entirely inside an environmental simulation chamber to simulate a corrosive environment containing acetic acid vapor. When the silicon wafer 30 support device is placed in the environmental simulation chamber, the acetic acid vapor condenses into a liquid state at lower temperatures, such as on the support rod. The first drainage hole 111 corresponds to the end of the silicon wafer 30, thereby effectively guiding the acetic acid liquid downwards and preventing it from accumulating at the end of the silicon wafer 30 and flowing onto the surface of the silicon wafer 30, which would affect the testing accuracy of the silicon wafer 30.

[0032] Furthermore, in this embodiment, the first drainage hole 111 includes a first opening and a second opening that communicate with each other. The first opening is located on the side of the first support rod 11 closer to the silicon wafer 30, and the second opening is located on the side of the first support rod 11 away from the silicon wafer 30. The diameter of the first opening is larger than the diameter of the second opening. That is, the first drainage hole 111 is generally funnel-shaped, which facilitates the collection of acetic acid liquid from the side closer to the silicon wafer 30 and its natural drainage to the side away from the silicon wafer 30, thereby preventing liquid from stagnating or backflowing on the surface of the first support rod 11.

[0033] Specifically, the diameter of the first opening is larger than the thickness of the silicon wafer 30. In practical applications, the silicon wafer 30 is placed along the diameter line of the first opening, so that both sides of the silicon wafer 30 expose part of the first opening, and the silicon wafer 30 does not completely block the first opening. This allows the acetic acid liquid to flow into the drainage hole in a timely manner after contacting the first support rod 11, avoiding contact between the acetic acid liquid and the end of the silicon wafer 30. It also prevents the acetic acid liquid from adhering to the edge of the first drainage hole 111, flowing back, or spreading along the support rod to the surface of the silicon wafer 30. Furthermore, the acetic acid liquid will flow along the inner wall of the first drainage hole 111 to the edge of the first opening, so as to drip down from the gaps between the multiple silicon wafers 30, avoiding contact with the surface of the silicon wafer 30.

[0034] In other embodiments, the first drainage hole 111 may also be of other structures, such as a cylindrical hole, a rectangular hole, etc.

[0035] In an optional embodiment, the second support rod 12 is further provided with a plurality of second drainage holes 121, which correspond to a plurality of first drainage holes 111. The second drainage holes 121 can drain the liquefied acetic acid liquid on the second support rod 12, preventing it from accumulating at the end of the silicon wafer 30.

[0036] Specifically, in this embodiment, the second drainage hole 121 includes a third opening and a fourth opening. The third opening is located on the side of the second support rod 12 close to the silicon wafer 30, and the fourth opening is located on the side of the second support rod 12 away from the silicon wafer 30. The diameter of the third opening is smaller than the diameter of the fourth opening.

[0037] That is, the structure of the second drainage hole 121 is similar to that of the first drainage hole 111, both of which can be trumpet-shaped. However, since the second drainage hole 121 is located at the lower end of the silicon wafer 30, the structure of the second drainage hole 121 is actually a mirror image of the structure of the first drainage hole 111.

[0038] In an optional embodiment, there are two second support rods 12, spaced apart, with the distance between each second support rod 12 and the second end of the side plate 13 being the same. The two second support rods 12 can form a dual-point support structure at the bottom of the solar cell, improving the uniformity of force distribution on the solar cell. Correspondingly, there can also be two first support rods 11 arranged side-by-side, thereby forming a dual-point restraint on the other side of the silicon wafer 30.

[0039] In an optional embodiment, the first support rod 11 is provided with a plurality of first slots 115, and each first slot 115 has a first drainage hole 111 on its bottom wall. The first slot 115 is used to accommodate the end of the silicon wafer 30. The first slots 115 are configured to cooperate with the end of the silicon wafer 30, so that the solar cell has a good fit when inserted, which facilitates batch placement operations. The plurality of first slots 115 can limit the end of the plurality of silicon wafers 30 respectively, preventing the silicon wafers 30 from shifting, tilting or shaking during placement, and improving the stability of the silicon wafers 30 during testing. Furthermore, the first drainage hole 111 is located on the bottom wall of the first card slot 115, so that the liquefied acetic acid liquid can be discharged directly through the corresponding drainage hole along the bottom of the card slot, avoiding the accumulation of acetic acid liquid inside the card slot or in the area below the silicon wafer 30.

[0040] Accordingly, the second support rod 12 may be provided with a plurality of second slots 125, and each second slot 125 has a second drain hole 121 on its bottom wall. The second slots 125 and the first slots 115 are arranged opposite to each other to hold the two ends of the silicon wafer 30 and limit its position.

[0041] In an optional embodiment, the first support rod 11 is provided with a first hydrophobic layer (not shown) on the side facing the second support rod 12. The first hydrophobic layer can effectively reduce the affinity between the surface and the liquefied acetic acid liquid on the surface, so that the acetic acid liquid can quickly slide off after forming liquid on the surface, thereby reducing the adhesion and residence time of the acetic acid liquid in the area and improving the drainage efficiency.

[0042] Specifically, the first hydrophobic layer can be formed by coating, spraying, hot-pressing, or other methods. Materials can include fluorine-based coatings, silicon-based coatings, and nano-hydrophobic films, enabling the first hydrophobic layer to possess good corrosion resistance and a high hydrophobic angle, maintaining stable performance over a long period in acidic gas environments. Furthermore, the area, thickness, and surface roughness of the first hydrophobic layer can be selected based on the condensation characteristics of the actual acetic acid vapor environment.

[0043] Correspondingly, a second hydrophobic layer may be provided on the side of the second support rod 12 facing the first support rod 11. The function of the second hydrophobic layer is similar to that of the first hydrophobic layer, and will not be described in detail here.

[0044] Please see Figure 2 This application also provides a silicon wafer testing device, including an environmental chamber 21, a receiving tank 22, and a heater 23, which will be described in detail below.

[0045] The environmental chamber 21 is used to house the silicon wafer carrier as described in any of the above, forming a closed or semi-closed test space, thereby conducting accelerated aging, corrosion resistance or performance stability tests on the silicon wafer under certain temperature, humidity or corrosive atmosphere conditions.

[0046] The container 22 is used to hold the test liquid and is located inside the environmental chamber 21. The test liquid may include acetic acid, hydrochloric acid or other organic acid solutions, as a simulated corrosive medium that may occur in the actual use environment.

[0047] Heater 23 is used to heat the containment tank 22 to convert the test liquid in the containment tank 22 into a gaseous state, thereby creating a preset atmosphere in the environmental chamber 21. For example, when heater 23 heats the acetic acid liquid in the containment tank 22 to above its boiling point or vaporization point, acetic acid vapor can diffuse into the interior of the environmental chamber 21, forming a corrosive acidic atmosphere to simulate the vapor-phase corrosion effect on silicon wafers in real-world applications.

[0048] Furthermore, parameters such as temperature, air pressure, and humidity within the environmental chamber 21 can be precisely adjusted by an external control system to meet the needs of different testing standards or simulated working conditions. Simultaneously, a sensor module can be installed inside the environmental chamber 21 to monitor atmosphere concentration, temperature changes, and time progression, thereby ensuring the controllability of the testing process and the accuracy of the data.

[0049] In an optional embodiment, the silicon wafer testing apparatus further includes a temperature and humidity controller 27, a gas duct 25, a thermal circulation assembly 26, and a temperature setter 28. The temperature and humidity controller 27 is electrically connected to the thermal circulation assembly 26 and is used to monitor the temperature and humidity parameters inside the environmental chamber 21 in real time. The gas duct 25 is connected at both ends to the thermal circulation assembly 26 and the receiving tank 22, which is located above the silicon wafer support device inside the environmental chamber 21. The temperature setter 28 is electrically connected to the heater 23, which is used to heat the wafer according to the temperature set by the temperature setter 28. When the temperature and humidity controller 27 detects that the temperature or humidity inside the environmental chamber 21 exceeds or falls below a preset threshold, the thermal circulation assembly 26 vents some of the gaseous vapor inside the environmental chamber 21 through the gas duct 25 and cools and liquefies it. The liquefied vapor is then returned to the receiving tank 22 containing the acetic acid solution, thereby achieving dynamic control of the humidity inside the environmental chamber 21 and ensuring stable atmospheric conditions are maintained during the testing process. This enables closed-loop regulation of temperature and humidity inside the environmental chamber 21, effectively simulating the complex and fluctuating gas corrosion environment during long-term operation, and providing more accurate and consistent experimental conditions for the reliability testing of solar cells.

[0050] In an optional embodiment, the silicon wafer testing apparatus further includes a partition 24 located above the silicon wafer carrier within the environmental chamber 21. The partition 24 has a plurality of evenly distributed vents 241. The partition 24 at the top of the silicon wafer carrier forms an airflow buffer layer between the solar cell and the top of the environmental chamber 21, regulating and guiding the gas flow path and improving the uniformity of the atmosphere. The vents 241 maintain gas connectivity between the upper and lower spaces within the environmental chamber 21, allowing the vapor atmosphere to form natural convection or balanced diffusion within the chamber, preventing abnormal pressure or gas stagnation due to a sealed top.

[0051] Specifically, the diameter of the pore 241 can be between 2mm and 30mm (e.g., 2mm, 4mm, 6mm, 10mm, 16mm, 24mm, 30mm). Furthermore, the partition 24 can be made of high-temperature and corrosion-resistant materials, such as polytetrafluoroethylene plates, stainless steel porous plates, or composite coated aluminum plates, which can effectively block liquids and ensure that no harmful substances are released during the test that affect the performance of the silicon wafer.

[0052] In an optional embodiment, one or more positioning holes 131 are provided on the side of the two side plates of the silicon wafer carrier that are far apart from each other. The two inner walls of the environmental chamber 21 are provided with protrusions 211 corresponding to the positioning holes 131. The distance between the protrusions 211 and the receiving groove 22 is greater than the height of the silicon wafer carrier. The protrusions 211 are used to engage with the corresponding positioning holes 131 so that the silicon wafer carrier is suspended above the receiving groove 22.

[0053] By setting the positioning hole 131 to cooperate with the corresponding bump 211, the silicon wafer carrier can be quickly installed and stably suspended in the environmental chamber 21, which simplifies the operation process of placing the device and ensures the spatial positioning consistency of the cells during the testing process, which is beneficial to controlling the uniform effect of acetic acid vapor on the cells.

[0054] In addition, the distance between the bump 211 and the receiving groove 22 is greater than the height of the silicon wafer support device, ensuring that when it is suspended, there is a sufficient distance between the cell and the test liquid or the receiving groove 22 below, avoiding liquid splashing directly onto the silicon wafer surface or droplet back splashing during steam condensation, thereby ensuring that the silicon wafer is only exposed to the steam environment during the test, improving the relevance of the test and the repeatability of the data.

[0055] Furthermore, the positioning hole 131 can be set at multiple points according to the size of the silicon wafer carrier and the load balancing requirements. The bump 211 can also be replaced with a flexible snap or a tapered post to adapt to silicon wafer carriers of different models or materials, thereby enhancing the versatility and adaptability of the equipment.

[0056] The following provides an example of specific test methods and conditions.

[0057] 1. First, test the electrical properties and EL (Electroluminescence) of the silicon wafer under test. 2. Add a certain amount of KCl to the container tank of the environmental chamber, pour in 1000ml of deionized water, add 40g~100g of glacial acetic acid and stir with a magnetic stirrer for 15~20min. After the acetic acid solution is completely stirred, pour it into the container tank and slowly place the silicon wafer carrier into the environmental chamber.

[0058] 3. Turn on the temperature and humidity control unit, start the heater, and set the temperature and humidity. The test time should be at least 6 to 12 hours. Turn on the heat circulation unit to adjust the air humidity and promote airflow between the top of the environmental chamber. The heater should maintain a temperature of 84℃ to 86℃.

[0059] 4. After removing the silicon wafer, perform electrical performance and EL tests again, and compare the electrical performance test data before and after acetic acid treatment and for silicon wafers with different pastes. This will determine the acetic acid resistance of the silicon wafer.

[0060] Please see Figure 3 and Figure 4 , Figure 3 For silicon wafers that have been tested for acid resistance using a standard flower basket, Figure 4 The silicon wafer is a silicon wafer that has undergone an acid resistance test using the silicon wafer carrier device of the present application embodiment.

[0061] visible, Figure 3The edges of the silicon wafers in the test showed obvious signs of excessive corrosion due to contact with acetic acid liquid, which greatly affected the accuracy of the test results. Figure 4 In this process, the liquefied acetic acid liquid is all diverted away by the drainage holes on the support rod, avoiding accumulation at the end of the silicon wafer. This reduces the direct contact between the acetic acid liquid and the end of the silicon wafer, resulting in a more consistent degree of acid corrosion on the overall surface, which can more intuitively reflect the true acid resistance of the silicon wafer.

[0062] It should be noted that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential," etc., are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. The directional terms "inner" and "outer" refer to the inside or outside relative to the outline of the component itself. For example, if a device in the drawings is inverted, a device described as "above" or "on top of" other devices or structures will subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein are interpreted accordingly.

[0063] It should also be noted that the terms "one embodiment," "another embodiment," and "embodiment" used in this application refer to specific features, structures, or characteristics described in connection with that embodiment, which are included in at least one embodiment described in the general description of this application. The appearance of the same expression in multiple places in the specification does not necessarily refer to the same embodiment. Furthermore, when a specific feature, structure, or characteristic is described in connection with any embodiment, the intention is to suggest that implementing such a feature, structure, or characteristic in conjunction with other embodiments also falls within the scope of this application.

[0064] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0065] It should also be noted that the above are merely preferred embodiments of this application and do not limit the scope of patent protection of this application. Any equivalent structural or procedural changes made using the content of this application’s specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A silicon wafer carrier device, characterized in that, include: Two side panels positioned opposite each other; A first support rod is connected between the two side plates and located at the first end of the two side plates. The first support rod is provided with a plurality of first drainage holes. The second support rod spans between the two side plates and is located at the second end of the two side plates. The second support rod is used to support the silicon wafer. In the case where a silicon wafer is placed between the first support rod and the second support rod, each of the first drainage holes corresponds to the end of a silicon wafer.

2. The silicon wafer carrier device according to claim 1, characterized in that, The first drainage hole includes a first opening and a second opening that are connected. The first opening is located on the side of the first support rod closest to the silicon wafer; The second opening is located on the side of the first support rod away from the silicon wafer; The diameter of the first opening is larger than the diameter of the second opening, and the diameter of the first opening is also larger than the thickness of the silicon wafer.

3. The silicon wafer carrier device according to claim 1, characterized in that, The second support rod is also provided with a plurality of second drainage holes, which correspond to a plurality of first drainage holes.

4. The silicon wafer carrier device according to claim 3, characterized in that, The second drainage hole includes a third opening and a fourth opening; The third opening is located on the side of the second support rod closer to the silicon wafer; The fourth opening is located on the side of the second support rod away from the silicon wafer; The diameter of the third opening is smaller than the diameter of the fourth opening.

5. The silicon wafer carrier device according to claim 1, characterized in that, There are two second support rods, which are spaced apart and are equidistant from the second end of the side plate.

6. The silicon wafer carrier device according to claim 1, characterized in that, The first support rod is provided with a plurality of first slots, and each first slot has a first drainage hole on its bottom wall. The first slot is used to accommodate the end of the silicon wafer.

7. The silicon wafer support device according to any one of claims 1 to 6, characterized in that, The first support rod has a first hydrophobic layer on the side facing the second support rod.

8. A silicon wafer testing device, characterized in that, include: An environmental enclosure for housing the silicon wafer carrier as described in any one of claims 1 to 7; A container for holding the test liquid is located inside the environmental chamber; A heater is used to heat the containment tank to convert the test liquid in the containment tank into a gaseous state, thereby creating a preset atmosphere in the environmental chamber.

9. The silicon wafer testing apparatus according to claim 8, characterized in that, One or more positioning holes are provided on the side of the two side plates that are far apart from each other; The environmental chamber has protrusions on its two opposite inner walls that correspond to the positioning holes. The distance between the protrusions and the receiving groove is greater than the height of the silicon wafer carrier. The bump is used to engage with the corresponding positioning hole so that the silicon wafer carrier is suspended above the receiving groove.

10. The silicon wafer testing apparatus according to claim 8, characterized in that, It also includes a partition, which is located above the silicon wafer support device inside the environmental chamber, and the partition has a plurality of evenly distributed air holes.

Images