A magnetron sputtered aluminum nitride ceramic multilayer panel

Abstract

The utility model relates to the technical field of electronic packaging material, concretely is a kind of magnetron sputtering aluminium nitride ceramic multilayer board, comprising: aluminium nitride ceramic substrate, the top of aluminium nitride ceramic substrate is equipped with several positioning columns, aluminium nitride ceramic substrate's lateral wall is equipped with the slot, slot is the section is back shape, the inside installation of slot has the block, the lateral wall of block is equipped with anti-collision frame;Beneficial effects are: the utility model proposes a kind of magnetron sputtering aluminium nitride ceramic multilayer board, by the use of positioning column, slot, block and anti-collision frame, avoid the adhesion between the shift of placing when multilayer board is placed and influence board layer, can also avoid the accuracy and uniformity of magnetron sputtering influenced by shift, so that the uneven distribution of titanium ion in aluminium nitride ceramic multilayer board.

Description

Technical Field

[0001] This utility model relates to the field of electronic packaging materials technology, specifically to a magnetron sputtered aluminum nitride ceramic multilayer board. Background Technology

[0002] With the popularization of 5G communication technology and the advancement of 6G research and development, high-frequency, high-speed, and highly integrated electronic devices place stringent requirements on the performance of packaging substrates. Traditional alumina ceramic substrates have a thermal conductivity of only 20-30 W / (m·K), which is insufficient to meet the heat dissipation requirements of high-power chips. In traditional DPC processes, the metallization of ceramic substrates relies on sputtering a seed layer followed by electroplating for thickness enhancement. However, the interlayer alignment accuracy is poor during multilayer board fabrication, and the difference in thermal expansion coefficients between AlN and the metal layers easily leads to interface delamination. Existing technologies mostly employ high-temperature co-firing (HTCC), but the high process temperature (>1600℃) limits the selection of metal materials.

[0003] In the prior art, during the manufacturing process of aluminum nitride ceramic multilayer boards, the internal layers are prone to movement and deviation. During magnetron sputtering, the titanium ions inside are easily unevenly distributed when sputtered into the interior, which can easily affect the overall performance of the aluminum nitride ceramic multilayer board after it is formed.

[0004] Therefore, this utility model proposes a magnetron sputtered aluminum nitride ceramic multilayer plate to solve the above problems. Utility Model Content

[0005] The purpose of this invention is to provide a magnetron sputtered aluminum nitride ceramic multilayer plate to solve the problems mentioned in the background art.

[0006] To achieve the above objectives, the present invention provides the following technical solution: a magnetron sputtered aluminum nitride ceramic multilayer plate, the magnetron sputtered aluminum nitride ceramic multilayer plate comprising: an aluminum nitride ceramic substrate, a plurality of positioning posts mounted on the top of the aluminum nitride ceramic substrate, a slot formed on the side wall of the aluminum nitride ceramic substrate, the slot having a U-shaped cross section, a locking block installed inside the slot, and an anti-collision frame installed on the side wall of the locking block.

[0007] Preferably, the top of the aluminum nitride ceramic substrate is provided with a plurality of insulating layers, and a high-energy ion layer is provided between the insulating layers.

[0008] Preferably, an isolation layer is installed between the insulating layers, and the isolation layers are all located above the high-energy ion layer.

[0009] Preferably, the isolation layer includes a titanium ion layer, a tungsten ion layer, and a molybdenum ion layer.

[0010] Preferably, an electroplated copper plate is installed between the insulating layers, with the electroplated copper plate located above the insulating layer.

[0011] Preferably, through holes are provided between the insulating layer, the high-energy ion layer, the isolation layer and the electroplated copper plate.

[0012] Preferably, the positioning post penetrates the interior of the insulating layer, the high-energy ion layer, the isolation layer, and the electroplated copper plate, and a cover plate is installed on the top of the positioning post.

[0013] Compared with the prior art, the beneficial effects of this utility model are:

[0014] This invention proposes a magnetron sputtering aluminum nitride ceramic multilayer plate. By using positioning posts, slots, blocks, and anti-collision frames, it avoids the multilayer plate from shifting during placement, which would affect the adhesion between the layers. At the same time, it can prevent the shift from affecting the accuracy and uniformity of magnetron sputtering, thus avoiding uneven distribution of titanium ions inside the aluminum nitride ceramic multilayer plate. Attached Figure Description

[0015] Figure 1 This is a three-dimensional structural diagram of the magnetron sputtered aluminum nitride ceramic multilayer plate of this utility model;

[0016] Figure 2 This is a three-dimensional disassembled structural diagram of the magnetron sputtered aluminum nitride ceramic multilayer plate of this utility model;

[0017] Figure 3 This is a schematic cross-sectional view of the magnetron sputtered aluminum nitride ceramic multilayer plate of this utility model.

[0018] Figure 4 This utility model Figure 2 A schematic diagram of the enlarged planar structure of A.

[0019] In the diagram: 1. Aluminum nitride ceramic substrate; 2. Positioning post; 3. Slot; 4. Block; 5. Anti-collision frame; 6. Insulating layer; 7. High-energy ion layer; 8. Isolation layer; 9. Titanium ion layer; 10. Tungsten ion layer; 11. Molybdenum ion layer; 12. Electroplated copper plate; 13. Through hole; 14. Cover plate. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this utility model clear and complete, the embodiments of this utility model will be further described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only some, not all, embodiments of this utility model, and are merely used to explain the embodiments of this utility model. They are not intended to limit the embodiments of this utility model. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0021] Example 1: Please refer to Figures 1 to 4This utility model provides a technical solution: a magnetron sputtered aluminum nitride ceramic multilayer plate, the magnetron sputtered aluminum nitride ceramic multilayer plate includes: an aluminum nitride ceramic substrate 1, a plurality of positioning posts 2 are installed on the top of the aluminum nitride ceramic substrate 1, a slot 3 is opened on the side wall of the aluminum nitride ceramic substrate 1, the slot 3 is cut into a U-shape, a block 4 is installed inside the slot 3, and an anti-collision frame 5 is installed on the side wall of the block 4;

[0022] In use, the top of the aluminum nitride ceramic substrate 1 is positioned by positioning posts 2 to facilitate the sequential placement and neat arrangement of multilayer boards, preventing misalignment during placement that could affect the adhesion between the layers. This also prevents misalignment from affecting the accuracy of magnetron sputtering. The slots 3 at the bottom of the aluminum nitride ceramic substrate 1 facilitate the locking blocks 4 to drive the anti-collision frame 5 to limit and fix the aluminum nitride ceramic substrate 1 and the side walls of the multilayer boards. This also prevents the sides and four corners of the multilayer boards from being damaged by collisions, enhancing the compressive strength of the multilayer boards and improving their service life.

[0023] Example 2: Based on Example 1, a multi-layer board with multiple stacked layers is provided. Several insulating layers 6 are installed on the top of the aluminum nitride ceramic substrate 1. High-energy ion layers 7 are installed between the insulating layers 6. Isolation layers 8 are installed between the insulating layers 6. The isolation layers 8 are all located above the high-energy ion layers 7. The isolation layers 8 include titanium ion layer 9, tungsten ion layer 10 and molybdenum ion layer 11.

[0024] In use, an insulating layer 6 is first placed on an aluminum nitride ceramic substrate 1, followed by a high-energy ion layer 7. Titanium ions are implanted into the high-energy ion layer 7 to enhance the bonding at the interface. After stacking an insulating layer 6, an isolation layer 8 is placed. Inside the isolation layer 8, a titanium ion layer 9, a tungsten ion layer 10, and a molybdenum ion layer 11 are stacked sequentially between the insulating layers 6 to address the thermal mismatch problem. At the same time, the content of titanium ions decreases in a gradient from top to bottom, thereby reducing the titanium target power and increasing the deposition of titanium ions.

[0025] Example 3: Based on Example 2, an electroplated copper plate 12 is provided to facilitate pulsed magnetron sputtering. The electroplated copper plate 12 is installed between the insulating layers 6 and is located above the isolation layer 8. Through holes 13 are provided between the insulating layer 6, the high-energy ion layer 7, the isolation layer 8 and the electroplated copper plate 12. The positioning post 2 penetrates the interior of the insulating layer 6, the high-energy ion layer 7, the isolation layer 8 and the electroplated copper plate 12. A cover plate 14 is installed on the top of the positioning post 2.

[0026] In use, the electroplated copper plate 12 utilizes the good conductivity of copper to facilitate dynamic sputtering of the copper target material. The frequency of sputtering is increased by using a pulse power supply, thereby improving the utilization rate of the copper target material and increasing the sputtering of titanium ions, thus increasing the number of titanium ions deposited on the aluminum nitride ceramic substrate 1. Through the through-hole 13, the vertical and uniform sputtering of titanium ions onto the aluminum nitride ceramic substrate 1 is facilitated, accelerating the formation of the aluminum nitride ceramic multilayer board.

[0027] In practical use, the top of the aluminum nitride ceramic substrate 1 is positioned by positioning posts 2 to facilitate the sequential placement and neat arrangement of multilayer boards, preventing misalignment during placement that could affect the adhesion between layers. This also prevents misalignment from affecting the accuracy of magnetron sputtering. A slot 3 at the bottom of the aluminum nitride ceramic substrate 1 allows the locking block 4 to move the anti-collision frame 5 to limit and fix the aluminum nitride ceramic substrate 1 and the sidewalls of the multilayer boards. The electroplated copper plate 12 utilizes the excellent conductivity of copper to facilitate dynamic sputtering of the copper target material, using pulsed... The power supply increases the sputtering frequency to improve the utilization rate of the copper target. Titanium ion layer 9, tungsten ion layer 10 and molybdenum ion layer 11 are stacked sequentially between the insulating layers 6 to address the thermal mismatch problem. At the same time, the content of titanium ions decreases in a gradient from top to bottom, thereby reducing the titanium target power, increasing the deposition of titanium ions, and further increasing the sputtering of titanium ions to increase the number of titanium ions deposited on the aluminum nitride ceramic substrate 1. Through-hole 13 facilitates the vertical and uniform sputtering deposition of titanium ions on the aluminum nitride ceramic substrate 1, accelerating the formation of aluminum nitride ceramic multilayer board.

[0028] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A magnetron sputtered aluminum nitride ceramic multilayer plate, characterized in that: The magnetron sputtered aluminum nitride ceramic multilayer plate includes: an aluminum nitride ceramic substrate (1), a number of positioning posts (2) are installed on the top of the aluminum nitride ceramic substrate (1), a slot (3) is opened on the side wall of the aluminum nitride ceramic substrate (1), the slot (3) is cut in the shape of a back, a block (4) is installed inside the slot (3), and an anti-collision frame (5) is installed on the side wall of the block (4).

2. The magnetron sputtered aluminum nitride ceramic multilayer plate according to claim 1, characterized in that: The top of the aluminum nitride ceramic substrate (1) is provided with a plurality of insulating layers (6), and a high-energy ion layer (7) is provided between the insulating layers (6).

3. The magnetron sputtered aluminum nitride ceramic multilayer plate according to claim 2, characterized in that: An isolation layer (8) is installed between the insulating layers (6), and the isolation layers (8) are all located above the high-energy ion layer (7).

4. The magnetron sputtered aluminum nitride ceramic multilayer plate according to claim 3, characterized in that: The isolation layer (8) includes a titanium ion layer (9), a tungsten ion layer (10), and a molybdenum ion layer (11).

5. The magnetron sputtered aluminum nitride ceramic multilayer plate according to claim 4, characterized in that: An electroplated copper plate (12) is installed between the insulating layers (6), and the electroplated copper plate (12) is located above the insulating layer (8).

6. The magnetron sputtered aluminum nitride ceramic multilayer plate according to claim 2, characterized in that: Through holes (13) are provided between the insulating layer (6), the high-energy ion layer (7), the isolation layer (8) and the electroplated copper plate (12).

7. The magnetron sputtered aluminum nitride ceramic multilayer plate according to claim 1, characterized in that: The positioning post (2) penetrates the interior of the insulating layer (6), the high-energy ion layer (7), the isolation layer (8) and the electroplated copper plate (12), and a cover plate (14) is installed on the top of the positioning post (2).

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