A mist-cvd system structure for preparing α-ga2o3 by rf heating
CN224686843UActive Publication Date: 2026-08-28SUZHOU GAYAO SEMICON TECH CO LTD
Patent Information
- Application Number
- CN202522287336.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-29
- Publication Date
- 2026-08-28
- Estimated Expiration
- 2035-10-29
AI Technical Summary
Technical Problem
[0005]1、加热速度慢，调温时存在明显滞后效应：基于电阻加热的热惯性，加热速度比较慢，且在温度调控时会有明显的滞后效应，达不到毫秒级的快速升温，难以适应如梯度沉积或多层薄膜制备等复杂工艺需求
Benefits of technology
[0020]1、采用垂直式的反应腔和气浮旋转装置、同轴心对称设置，不仅有助于前驱体在衬底表面分布更均匀，且降低了RF加热装置对加热区域的调校难度，使得基底表面温度均衡；外置式的RF加热装置，载台、底座及热电偶之间在轴心位置设置配套的定位结构，使系统结构更简单、易于安装和日常拿取操作。
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Abstract
The application discloses an RF heating preparation Mist CVD system structure of alpha-Ga2O3, including atomization device, mixed gas inlet main pipe and reaction cavity, characterized in that: the atomization device includes an ultrasonic atomization tank, the ultrasonic atomization tank is communicated with a carrier gas pipe and a mixed gas inlet main pipe, and the mixed gas inlet main pipe is also communicated with an oxygen inlet pipe; the reaction cavity includes a vertically erected shell, an RF heating device is arranged outside the shell, an air floating rotating device and a thermocouple are arranged in the reaction cavity, the shell top is communicated with the mixed gas inlet main pipe, and the shell bottom is provided with a tail gas outlet, so that the application has the characteristics of simple structure, easy operation, fast heating and temperature control, high heat energy utilization rate, precise control on gallium oxide-based film preparation and high process consistency.
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Citation Information
Patent Citations
Preparation design for preparing gallium oxide thin film by Mist method
CN114059042A