Gas distribution apparatus and semiconductor thin film device

Abstract

The application discloses a gas distribution device and a semiconductor thin film equipment. The gas distribution device is arranged above a shower plate. The gas distribution device comprises a gas distribution member and a gas distribution valve island. The gas distribution member is internally provided with a plurality of annular flow channels which are distributed in a radial direction and arranged in a concentric manner. Each annular flow channel is uniformly provided with a plurality of gas outlet holes which axially penetrate the gas distribution member in a circumferential direction. The gas distribution valve island comprises a plurality of gas distribution valve groups which are connected with the annular flow channels in a one-to-one correspondence. Each gas distribution valve group independently controls the on-off of the corresponding annular flow channel. The gas distribution member with a plurality of independently controllable annular flow channels is arranged above the shower plate above the wafer. According to the radial distribution requirement of the wafer film thickness in the process, the on-off and gas flow of the corresponding annular flow channel are accurately controlled through the gas distribution valve island, the independent adjustment of the reaction or dilution gas flow in different radial intervals is realized, the film thickness uniformity of each area of the wafer is adjusted in a targeted manner, and the increase or decrease of the film thickness in the specified radial interval is realized.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a gas separation device and a semiconductor thin film equipment. Background Technology

[0002] In the coating process, the thickness range and uniformity of the thin film formed on the wafer surface are key control indicators for evaluating process quality. Therefore, the method used to adjust the uniformity of wafer film thickness has a crucial impact on the process effect. In the existing technology, the uniformity of film thickness is usually adjusted by optimizing the structural parameters such as the hole distribution and hole size of the spray plate. However, this adjustment method has inherent limitations. Once the structure of the spray plate is set, its adjustment result for the uniformity of film thickness is fixed. When the process requirements (such as the target value of film thickness, uniformity accuracy, etc.) change, it is impossible to adapt through flexible adjustment. Multiple design iterations or even complete replacement of the spray plate are required, which not only increases the cost and cycle of process adjustment, but also makes it difficult to meet the diverse and dynamic process requirements. Utility Model Content

[0003] The embodiments of this utility model provide a gas separation device and a semiconductor thin film equipment, which aim to solve the problem that the existing wafer film thickness uniformity adjustment results are fixed, making it difficult to flexibly adapt to different process requirements and resulting in poor adjustment flexibility.

[0004] In a first aspect, this utility model provides a gas distribution device, comprising: The gas distributor has multiple annular flow channels inside. The multiple annular flow channels are distributed at radial intervals along the gas distributor and are arranged concentrically. Each annular flow channel has multiple air outlets evenly opened along its circumference. The air outlets pass through the gas distributor from the annular flow channel along the axial direction of the gas distributor. The gas distribution valve island includes multiple gas distribution valve groups, each of which is connected to a corresponding annular flow channel. Each gas distribution valve group independently controls the opening and closing of the corresponding annular flow channel.

[0005] Furthermore, each of the gas distribution valve groups includes a gas valve and a gas pipe, with the two ends of the gas pipe connected to the annular flow channel and the gas valve, respectively, and the gas valve being used to connect to a gas source.

[0006] Furthermore, the air valve is a three-way valve, which includes a first end, a second end, and a third end. The second end is connected to the air pipe. The three-way valves of the multiple air distribution valve groups are connected in series through their first end and the third end. The first end of the first three-way valve is used to connect to the air source, and the third end of the last three-way valve is closed.

[0007] Furthermore, each of the annular flow channels includes an annular air inlet channel, an annular air outlet channel, and a radial connecting channel. The annular air inlet channel and the annular air outlet channel are arranged concentrically and are arranged adjacent to each other at intervals along the radial outer and inner sides of the air distribution component. The annular air inlet channel and the annular air outlet channel are radially connected through the radial connecting channel. The annular air inlet channel is connected to the air distribution valve group. Multiple air outlet holes are evenly opened along the circumferential direction of the annular air outlet channel.

[0008] Furthermore, each of the annular flow channels also includes a radial air inlet channel and an air inlet hole. The air inlet hole is opened on the outer side wall of the air distribution component. The radial air inlet channel extends radially inward from the air inlet hole and passes through the annular air inlet channel. The air inlet hole is connected to the air distribution valve group.

[0009] Furthermore, the radial connecting air passage extends radially along the air distribution component, and the radial connecting air passage includes a radial outer side and a radial inner side. The radial outer side intersects the annular air inlet perpendicularly, and the radial inner side is in a straight line through the annular air outlet.

[0010] Furthermore, the radial connecting air passage is annular, with its outer ring side connected to the annular air inlet and its inner ring side connected to the annular air outlet.

[0011] Furthermore, the radial air intake extends radially through the air distributor to the axial bottom of the annular air intake, and the axial top of the annular air intake communicates with the radial connecting air passage, forming a height difference between the radial air intake and the radial connecting air passage.

[0012] Furthermore, the air outlet includes a first section and a second section. One end of the first section is connected to the annular air outlet section, and the other end is connected to one end of the second section. The other end of the second section axially penetrates the air distribution component. The diameter of the annular air outlet is larger than the diameter of the first section, and the diameter of the first section is larger than the diameter of the second section.

[0013] Secondly, this utility model also provides a semiconductor thin film device, including the gas separation device described above.

[0014] This invention provides a gas distribution device and a semiconductor thin film equipment. The gas distribution device is disposed above a spray plate and includes a gas distribution component and a gas distribution valve island. The gas distribution component has multiple radially spaced and concentrically arranged annular flow channels inside. Each annular flow channel has multiple axially penetrating gas outlets uniformly opened along the circumference. The gas distribution valve island includes multiple gas distribution valve groups connected one-to-one with the annular flow channels. Each gas distribution valve group independently controls the opening and closing of the corresponding annular flow channel. By setting a gas distribution component with multiple independently controllable annular flow channels above a spray plate above the wafer, this application can precisely control the opening and closing of the corresponding annular flow channels and the gas flow rate according to the radial distribution of the wafer film thickness during the process. This allows for independent adjustment of the flow rate of reaction gas or dilution gas in different radial regions, thereby specifically adjusting the film thickness uniformity in different areas of the wafer. This effectively solves the problems of fixed results and poor flexibility after spray plate adjustment in the prior art, and significantly improves the adaptability and adjustment efficiency of the coating process. Attached Figure Description

[0015] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 A schematic diagram of the gas distribution device according to an embodiment of this utility model is shown; Figure 2 A schematic diagram of the three-way valve of the gas distribution device according to an embodiment of this utility model is shown; Figure 3 This diagram shows a top view of the annular flow channel of the gas distribution device according to an embodiment of the present invention; Figure 4 Showing Figure 3 Enlarged schematic diagram of part A; Figure 5 A cross-sectional schematic diagram of the side of the annular flow channel of the gas distribution device according to an embodiment of the present invention is shown; Figure 6 Showing Figure 5 Enlarged schematic diagram of part B; Figure label: 1. Air distribution unit; 11. Annular flow channel; 111. Air inlet; 112. Radial air inlet channel; 113. Annular air inlet channel; 114. Radial connecting air channel; 115. Annular air outlet channel; 12. Air outlet; 121. First section; 122. Second section; 2. Air distribution valve island; 21. Air distribution valve assembly; 211. Three-way valve; 2111. First end; 2112. Second end; 2113. Third end; 212. Air pipe; Detailed Implementation

[0017] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.

[0018] The directional terms used in this invention, such as "up," "down," "front," "back," "left," "right," "inner," "outer," and "side," are merely for reference to the accompanying drawings. Therefore, the directional terms used are for explanation and understanding of this invention, and not for limiting it. Furthermore, in the accompanying drawings, structures that are similar or identical are indicated by the same reference numerals.

[0019] In the semiconductor manufacturing field, wafer coating uniformity is a key indicator affecting device performance. Currently, commonly used methods for adjusting film thickness uniformity primarily rely on a fixed spray plate orifice distribution. However, this adjustment method, once set, cannot be dynamically adjusted. When process parameters or film thickness requirements change, it necessitates downtime to replace the spray plate or multiple process iterations, reducing production efficiency and failing to meet increasingly sophisticated process demands. The inherent limitations of existing technologies, such as fixed results after spray plate adjustment and poor flexibility, restrict the adaptability and adjustment efficiency of the coating process.

[0020] Therefore, this utility model provides a gas distribution device and a semiconductor thin film equipment. By setting a gas distribution component with multiple independent and controllable annular flow channels above the spray plate above the wafer, and by precisely controlling the opening and closing of the corresponding annular flow channels and the gas flow rate through the gas distribution valve island, the film thickness in a specified radial range can be increased or decreased, which significantly improves the adaptability and adjustment efficiency of the coating process.

[0021] To address the aforementioned problem of film thickness uniformity adjustment, this utility model embodiment employs the following approach: A gas distribution component with multiple concentric annular flow channels is installed above the spray plate. Each annular flow channel is controlled by an independent gas distribution valve group. Through this annular partitioned gas supply structure, the flow rate of the reaction gas or dilution gas in each radial zone can be precisely controlled according to the film thickness distribution requirements. This enables targeted adjustment of the film thickness in different areas of the wafer, thereby dynamically and flexibly improving film thickness uniformity. It avoids the problem of needing to stop and replace traditional fixed spray plates, significantly improving the adaptability and adjustment efficiency of the coating process.

[0022] To better understand the above technical solutions, the following will provide a detailed explanation of the technical solutions in conjunction with the accompanying drawings and specific implementation methods.

[0023] Please see Figures 1-6 This utility model embodiment illustrates a gas distribution device, including: a gas distribution component 1 and a gas distribution valve island 2. The gas distribution component 1 has multiple annular flow channels 11 inside, which are radially spaced and concentrically arranged. Each annular flow channel 11 has multiple air outlets 12 evenly opened along its circumference, and the air outlets 12 penetrate the gas distribution component 1 from the annular flow channel 11 along the axial direction of the gas distribution component 1. The gas distribution valve island 2 includes multiple gas distribution valve groups 21, which are connected one-to-one with the multiple annular flow channels 11. Each gas distribution valve group 21 independently controls the opening and closing of the corresponding annular flow channel 11.

[0024] Reference Figure 1Specifically, the gas distributor 1 is a disc-shaped structure with a diameter matching the spray plate of the wafer processing cavity. The gas distributor 1 is fixed inside the cavity, specifically located in the area between the cavity cover and the spray plate, that is, above the spray plate, for example, 10-50 mm. The reaction or dilution gas is first transmitted to the spray plate through the gas distributor 1. The plurality of annular channels 11 include 6 concentric annular channels, and the radial distance between each annular channel 11 can be 50 mm. Each annular channel 11 has a plurality of cylindrical gas outlets 12 evenly distributed along the circumference. The axis of the gas outlets 12 is parallel to the axis of the gas distributor 1. Of course, it can be understood that there can be other numbers of annular channels, which are set according to actual needs and are not limited here. The gas distribution valve island 2 consists of multiple independent valve elements forming a gas distribution valve group 21. The gas distribution valve island 2 may include six gas distribution valve groups 21, the number of which matches the number of annular channels. The outlet of each gas distribution valve group 21 is sealed to the inlet of the corresponding annular flow channel 11 via a flange. The inlets of the gas distribution valve groups 21 are collectively connected to the gas box of the upstream gas supply system. The gas box contains an MFC (mass flow controller) corresponding to each gas distribution valve group 21, used to precisely control the gas flow rate of each annular flow channel 11. When a certain annular flow channel 11 needs gas supply, the corresponding valve element is switched to the conducting state, and the gas is evenly ejected through the annular flow channel 11 and the outlet 12. By dividing the gas delivery path into multiple independently controlled annular regions and coordinating with uniformly distributed vents 12, the reactant gas or diluent gas is directed through the vents 12 in each region and supplied to the wafer surface via the spray plate. This alters the gas concentration distribution in localized areas, allowing the reactant gas to be precisely delivered to specific radial positions on the wafer based on the film thickness distribution, thereby increasing or decreasing the film thickness within a specified radial range. When process requirements change necessitate increasing or decreasing the film thickness at a particular radial position on the wafer, only the corresponding annular flow channel 11's gas distribution valve group 21 needs to be activated to achieve rapid adjustment of the local gas flow rate without requiring a complete replacement of the spray plate. This enables zoned adjustment of the wafer film thickness, significantly improving the accuracy of coating uniformity control and process adaptability. It eliminates the need to replace the spray plate for different process requirements, reducing equipment downtime for maintenance.

[0025] Continue to refer to Figure 1In one embodiment, each of the gas distribution valve groups 21 includes a gas valve and a gas pipe 212. The two ends of the gas pipe 212 are connected to the annular flow channel 11 and the gas valve, respectively. The gas valve is used to connect to a gas source. Specifically, one end of the gas pipe 212 is sealed to the inlet of the corresponding annular flow channel 11 via a flange, and the other end is threaded to the outlet of the gas valve. The inlet of the gas valve is connected to the gas source (i.e., the gas box of the upstream gas supply system) via a flexible hose. Various types of valve structures can be used for the gas valve, and no limitation is made here. The gas valves of all the gas distribution valve groups 21 are installed side-by-side on the bracket of the gas distribution valve island 2, forming a modular structure for easy centralized control and maintenance. The gas valves are connected one-to-one to the annular flow channels 11 via the gas pipes 212. When the gas valve is open, the reaction gas or dilution gas in the gas source enters the gas pipe 212 through the gas valve and is then transported to the corresponding annular flow channel 11 through the gas pipe 212. Because each gas valve is independently controlled, the gas valves of specific annular flow channels 11 can be selectively opened or closed according to process requirements, achieving precise control over the gas flow in and out of each annular flow channel 11. This structure enables independent sealing control and flexible configuration of the gas supply system for each annular flow channel 11.

[0026] Reference Figure 2In this embodiment, the air valve is a three-way valve 211, which includes a first end 2111, a second end 2112, and a third end 2113. The second end 2112 is connected to the air pipe 212. The three-way valves 211 of the multiple air distribution valve groups 21 are connected in series by their first ends 2111 and third ends 2113. The first end 2111 of the first three-way valve 211 is used to connect to the air source, and the third end 2113 of the last three-way valve 211 is closed. Specifically, the first end 2111 of the three-way valve 211 is the air inlet, the second end 2112 is the working end, and the third end 2113 is the exhaust end. The working end is connected to the corresponding annular flow channel 11 through the air pipe 212. Multiple three-way valves 211 are connected in series via a first end 2111 and a third end 2113, meaning the third end 2113 of one three-way valve 211 is connected to the first end 2111 of the next three-way valve 211, forming a series gas path. The first end 2111 of the first three-way valve 211 is connected to the main gas source pipeline, and the third end 2113 of the last three-way valve 211 is sealed with a plug. Specifically, this series structure integrates multiple three-way valves 211 into a single gas path, allowing the gas source to supply gas to all gas distribution valve groups 21 simply by connecting from the first end, significantly simplifying the gas path layout. When it is necessary to adjust the gas flow rate of a specific annular flow channel 11, simply open the working end of the corresponding three-way valve 211, and the gas will be transported from the gas source to the target annular flow channel 11 via the series gas path. The unopened three-way valves 211 maintain the flow of gas in the series gas path. This series design enables independent control of each annular flow channel 11, significantly reduces the number of gas source interfaces and pipeline complexity, greatly reduces the space occupied by the equipment's gas circuit system, and lowers installation and maintenance costs.

[0027] Reference Figures 3-6In one embodiment, each of the annular flow channels 11 includes an annular air inlet channel 113, an annular air outlet channel 115, and a radial connecting air channel 114. The annular air inlet channel 113 and the annular air outlet channel 115 are arranged concentrically and are arranged adjacent to each other along the radial direction of the air distribution member 1. The annular air inlet channel 113 and the annular air outlet channel 115 are radially connected through the radial connecting air channel 114. The annular air inlet channel 113 is connected to the air distribution valve group 21. A plurality of air outlet holes 12 are evenly opened along the circumferential direction of the annular air outlet channel 115. Specifically, each annular flow channel 11 has an annular inlet 113 and an annular outlet 115, both of which are hollow channels in the shape of a ring. The annular outlet 115 is located in the inner ring, and the annular inlet 113 is located in the outer ring. They are arranged adjacent to each other radially along the air distribution component 1, with a radial connecting airway 114 of a certain width reserved at the interval to achieve radial communication. The radial connecting airway 114 can be an airway of various structures, such as multiple connecting channels, connecting ports, etc., which are not limited here. One side of the annular inlet 113 is provided with a single air inlet port, which is connected to the air outlet end of the corresponding air distribution valve group 21 through an air pipe 212. The bottom wall of the annular outlet 115 has air outlet holes 12 evenly opened along the circumferential direction. The air outlet holes 12 axially penetrate the air distribution component 1 and lead to the spray plate. The annular inlet 113 and annular outlet 115 of all annular flow channels 11 are arranged concentrically with the central axis of the air distribution component 1 as the center, and the spacing between adjacent annular flow channels 11 is consistent. Specifically, after the gas enters the annular intake duct 113 from the gas distribution valve assembly 21, it surrounds the gas distributor 1 around the annular intake duct 113, forming a stable airflow within the annular space. Then, it diffuses evenly through the radial connecting air passage 114 to the inner annular outlet duct 115. Since the gas in the annular outlet duct 115 is supplied from the entire circumference of the annular intake duct 113, the problem of localized airflow concentration during single-hole intake is avoided. Finally, the gas flows out through the evenly distributed outlet holes 12 around the circumference of the annular outlet duct 115. This path design, which involves first surrounding and then diffusing, effectively eliminates the unevenness caused by the directionality of the airflow compared to a single-hole direct supply method. The specific principle is that this structure divides the gas flow path into two stages: intake and diffusion. The gas first flows sufficiently within the annular intake channel 113 to form a stable airflow, and then smoothly transitions to the annular outlet channel 115 via the radial connecting channel 114. This ensures that the gas entering the outlet 12 is evenly distributed circumferentially, solving the problem of uneven gas output when using a single intake. This segmented design significantly improves the consistency of gas flow at the outlet 12, thereby ensuring the uniformity of gas concentration in the corresponding radial region of the wafer, providing a foundation for precise film thickness adjustment. Through this structure, the gas distribution device can deliver more uniformly distributed gas to the spray plate, making the concentration of reactant or diluent gas in the corresponding radial region of the wafer more stable. This avoids film thickness deviations caused by local gas concentration fluctuations, further improving the uniformity and accuracy of film thickness adjustment, while also providing a more stable gas source for subsequent gas distribution to the spray plate.

[0028] Reference Figure 3 In this embodiment, each annular flow channel 11 further includes a radial air inlet channel 112 and an air inlet hole 111. The air inlet hole 111 is opened on the outer wall of the gas distributor 1. The radial air inlet channel 112 extends radially inward from the air inlet hole 111 and penetrates to the annular air inlet channel 113. The air inlet hole 111 is connected to the gas distribution valve assembly 21. Specifically, the air inlet hole 111 of each annular flow channel 11 is opened on the outer wall of the gas distributor 1, is circular and evenly distributed along the circumference of the gas distributor 1 (each annular flow channel 11 corresponds to one air inlet hole 111). The radial air inlet channel 112 is a channel extending radially inward along the gas distributor 1, one end of which is connected to the air inlet hole 111, and the other end penetrates to the side wall of the annular air inlet channel 113, so that the air inlet hole 111, the radial air inlet channel 112 and the annular air inlet channel 113 form a continuous gas passage. The air inlet 111 is sealed to the air pipe 212 of the gas distribution valve assembly 21 via a flange. After the gas flows out of the gas distribution valve assembly 21, it sequentially enters the annular air intake duct 113 through the air inlet 111 and the radial air intake duct 112. Specifically, after the gas is output from the gas distribution valve assembly 21, it first enters the radial air intake duct 112 through the air inlet 111 and flows radially inward to the annular air intake duct 113. Since the radial air intake duct 112 is directly connected to the side wall of the annular air intake duct 113, the gas can quickly diffuse to both sides along the annular path after entering the annular air intake duct 113, avoiding local gas accumulation. This makes the pressure more balanced when the gas flows around in the annular air intake duct 113, thus providing a more stable initial state for the gas that subsequently enters the annular air outlet duct 115. With the above structure, gas can be smoothly introduced into the annular inlet 113 from the outside of the gas distributor 1 via a radial path, reducing the resistance during gas flow and ensuring that the gas is evenly distributed in the annular inlet 113. This provides a guarantee for the uniform gas output of the annular outlet 115, further improving the gas distribution consistency of the outlet 12, thereby enhancing the stability and accuracy of film thickness adjustment.

[0029] Reference Figure 4 and Figure 6In this embodiment, the radial connecting air passage 114 extends radially along the air distribution component 1. The radial connecting air passage 114 includes a radially outer side and a radially inner side. The radially outer side intersects perpendicularly with the annular air inlet passage 113, and the radially inner side communicates linearly with the annular air outlet passage 115. Specifically, the radial connecting air passage 114 is disposed between the annular air inlet passage 113 and the annular air outlet passage 115, extending radially along the air distribution component 1. The annular air inlet passage 113 is located in the outer ring, and the annular air outlet passage 115 is located in the inner ring. The radially outer side of the radial connecting air passage 114 intersects perpendicularly with and communicates with the inner wall of the annular air inlet passage 113, while the radially inner side communicates linearly with and is sealed to the outer wall of the annular air outlet passage 115. In a specific embodiment, the radial connecting air passage 114 can be a structure of various shapes, such as a straight connecting channel. In each annular flow channel 11, multiple radial connecting air passages 114 are evenly distributed along the circumferential direction of the annular inlet channel 113 and the annular outlet channel 115, forming a radial gas delivery path from the annular inlet channel 113 to the inner annular outlet channel 115. For another example, the radial connecting air passage 114 can also be an annular connecting channel, with its outer ring connected to the inner ring of the annular inlet channel and its inner ring connected to the outer ring of the annular outlet channel 115. Its specific shape and structure are not limited here. Specifically, after the gas enters the annular inlet duct 113, it first circles around the annular path. Since the radial connecting duct 114 intersects the annular inlet duct 113 perpendicularly, the gas does not rush directly and rapidly into the radial connecting duct 114 when flowing in the annular inlet duct 113, but instead remains sufficiently within the annular space. When the gas accumulates to a certain pressure, it will evenly enter each radial connecting duct 114, and then be linearly transported along the radial connecting duct 114 to the annular outlet duct 115. This avoids local velocity differences caused by sudden changes in gas flow direction, ensuring a more uniform gas distribution in the annular outlet duct 115. Through this structure, the gas obtains more sufficient mixing time in the annular inlet duct 113, and after forming a stable airflow, the uniformity of the gas transported to the annular outlet duct 115 via the radial connecting duct 114 is significantly improved. This makes the gas distribution output from the annular outlet duct 115 through the outlet hole 12 more uniform, further ensuring the film thickness adjustment accuracy of the corresponding radial region of the wafer.

[0030] Continue to refer to Figure 4 and Figure 6Preferably, in this embodiment, the radial connecting air passage 114 is annular, with its outer ring side connected to the annular air inlet passage 113 and its inner ring side connected to the annular air outlet passage 115. Specifically, the radial connecting air passage 114 is a continuous annular channel surrounding the central axis of the air distribution component 1. Its outer ring side is seamlessly connected to the inner wall of the annular air inlet passage 113, and its inner ring side is directly connected to the outer wall of the annular air outlet passage 115, forming a transition area between the inner and outer annular air passages. The annular air inlet passage 113, the radial connecting air passage 114, and the annular air outlet passage 115 are arranged concentrically to form a complete annular flow channel 11 unit. Specifically, when gas enters the annular inlet 113, it flows circumferentially and uniformly fills the entire annular space. Because the radial connecting channel 114 is a continuous annular design, gas can flow from the annular inlet 113 to the annular outlet 115 at any position via the radial connecting channel 114, avoiding the problems of localized airflow concentration or pressure unevenness that may occur with traditional discrete or multi-point connecting channels. The continuous annular radial connecting channel 114 provides a larger gas flow area, reduces gas flow resistance, and allows gas to smoothly and uniformly transition from the annular inlet 113 to the annular outlet 115, further enhancing the uniformity of gas distribution. Through the preferred structure of this embodiment, the annular design of the radial connecting channel 114 eliminates the airflow distribution blind spots that may be caused by discrete connecting channels, ensuring that the gas remains uniform throughout its transmission from the annular inlet 113 to the annular outlet 115. This achieves uniform diffusion of gas from the outer annular inlet 113 to the inner annular outlet 115, significantly improving the uniformity of wafer film thickness adjustment and process stability.

[0031] Reference Figure 6In this embodiment, the radial air intake duct 112 extends radially along the gas distributor 1 to the axial bottom of the annular air intake duct 113, and the axial top of the annular air intake duct 113 communicates with the radial connecting air duct 114. A height difference is formed between the radial air intake duct 112 and the radial connecting air duct 114. Specifically, the radial air intake duct 112 extends radially inward along the gas distributor 1, and its end extends to the axial bottom of the annular air intake duct 113, allowing gas to enter the bottom region of the annular air intake duct 113 from the outside of the gas distributor 1 through the radial air intake duct 112, forming a lower air intake structure. The axial top of the annular air intake duct 113 directly communicates with the radial connecting air duct 114, forming an upper air outlet structure. A height difference exists between the radial intake duct 112 and the radial connecting duct 114, meaning the outlet of the radial intake duct 112 is lower than the inlet of the radial connecting duct 114. This axial height difference creates a zigzag gas flow path that first rises and then levels out, forming a stepped layout in the vertical direction. Specifically, when gas enters the bottom of the annular intake duct 113 from the radial intake duct 112, because the inlet of the radial connecting duct 114 is at a higher position, the gas must first flow upwards within the annular intake duct 113 and fill the entire annular space, forming a circumferential circulation. This process prolongs the residence time of the gas within the annular intake duct 113, promoting thorough mixing and pressure equalization. Subsequently, the gas flows smoothly from the top of the annular intake duct 113 into the radial connecting duct 114, and then diffuses evenly to the annular outlet duct 115. This height difference design promotes thorough mixing of the gas within the annular inlet 113 by establishing a bottom-up gas flow path. The zigzag flow path increases the gas residence time, resulting in a more uniform distribution of gas components. This structure enhances the uniformity of the gas entering the radially connected gas channel 114, thereby improving the stability and consistency of the gas output from the annular outlet 115 through the outlet port 12. Ultimately, this strengthens the precision and reliability of wafer film thickness adjustment.

[0032] Continue to refer to Figure 6In one embodiment, the air outlet 12 includes a first section 121 and a second section 122. One end of the first section 121 communicates with the annular air outlet section, and the other end communicates with one end of the second section 122. The other end of the second section 122 axially penetrates the air distribution member 1. The diameter of the annular air outlet 115 is larger than the diameter of the first section 121, and the diameter of the first section 121 is larger than the diameter of the second section 122. Specifically, the air outlet 12 is composed of two coaxial cylindrical channels, including a first section 121 with a larger diameter and a second section 122 with a smaller diameter. The top end of the first section 121 communicates with the bottom wall of the annular air outlet 115, and the bottom end is connected to the top end of the second section 122. The bottom end of the second section 122 axially penetrates the air distribution member 1 and faces the spray plate. The central axes of the first orifice section 121 and the second orifice section 122 coincide, and the annular air outlet 115, the first orifice section 121, and the second orifice section 122 together form a stepped orifice structure with progressively narrowing openings. That is, the diameter of the annular air outlet 115 > the diameter of the first orifice section 121 > the diameter of the second orifice section 122. All the air outlets 12 are evenly distributed along the circumference of the annular air outlet 115, forming multiple sets of stepped airflow channels. Specifically, when gas enters the first orifice section 121 from the annular air outlet 115, the sudden narrowing of the orifice increases the airflow velocity and decreases the pressure, creating a preliminary throttling effect, resulting in a uniform gas distribution within the first orifice section 121. Subsequently, the gas enters the smaller-diameter second orifice section 122, undergoing another throttling acceleration, allowing the airflow to exit through the second orifice section 122 in a more stable state. This stepped orifice design, through two throttling effects, effectively balances the gas flow rate and velocity of each air outlet 12, avoiding uneven gas output caused by local resistance differences. Traditional single-hole vent design may result in uneven gas flow velocity during ejection, affecting film thickness uniformity. By employing a multi-segment vent design, the gas flow velocity changes as it passes through vent segments of different diameters, creating an acceleration effect. This helps to form a more uniform gas jet at the outlet of vent 12, thereby improving gas distribution below the spray plate and enhancing film thickness uniformity. In other words, the multi-segment vent 12 of the gas distributor 1 pre-adjusts the gas into a uniform and stable airflow, reducing secondary distribution deviations caused by initial airflow unevenness after delivery to the spray plate. Therefore, through the above structure, the stepped contraction design of the vent 12 effectively optimizes the gas flow state, ensuring that the gas flowing from the annular vent 115 forms a stable and uniform high-speed jet after passing through the vent 12, improving the distribution consistency of the gas upon reaching the wafer surface, and thus significantly improving the accuracy and uniformity of film thickness adjustment.

[0033] This utility model embodiment also provides a semiconductor thin film device, including a spray plate and a gas distribution device. The gas distribution device is the same as that described in the above embodiment, and is disposed above the spray plate. Specifically, the gas distribution device has been described in detail in the above embodiments, and for the sake of brevity, it will not be described again here.

[0034] Specifically, the spray plate of this semiconductor thin film equipment has a disc-shaped structure with uniformly distributed spray holes on its surface. The diameter of the spray holes matches the wafer size, and it is fixed inside the reaction chamber. The gas distribution device is installed directly above the spray plate, with the two maintaining a preset distance and their central axes coinciding. The gas distribution valve island 2 is fixed to a bracket outside the chamber and is connected to the annular flow channel 11 of the gas distribution component 1 through a gas pipe 212 passing through the chamber wall. When the equipment is working, the reaction gas or dilution gas is first controlled by the gas distribution valve group 21 of the gas distribution device, distributed by the annular flow channel 11, and rectified by the gas outlet 12. It is then delivered to the spray plate in a uniform airflow state, and then enters the reaction chamber through the spray holes of the spray plate, acting on the wafer surface below. When the process requires film thickness adjustment at a specific radial position of the wafer, the gas distribution valve group 21 corresponding to the annular flow channel 11 is opened to increase or decrease the supply of reaction gas in that area, thereby achieving precise control of the film thickness. This design allows the equipment to flexibly adapt to different process requirements, and optimize film thickness uniformity without replacing the spray plate, significantly improving the equipment's production efficiency and process flexibility.

[0035] The above description is merely a specific embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this utility model, and these modifications or substitutions should all be covered within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the scope of the claims.

Claims

1. A gas distribution device, characterized in that, include: The gas distributor has multiple annular flow channels inside. The multiple annular flow channels are distributed at radial intervals along the gas distributor and are arranged concentrically. Each annular flow channel has multiple air outlets evenly opened along its circumference. The air outlets pass through the gas distributor from the annular flow channel along the axial direction of the gas distributor. The gas distribution valve island includes multiple gas distribution valve groups, each of which is connected to a corresponding annular flow channel. Each gas distribution valve group independently controls the opening and closing of the corresponding annular flow channel.

2. The gas separator according to claim 1, characterized in that, Each of the gas distribution valve groups includes a gas valve and a gas pipe, with the two ends of the gas pipe connected to the annular flow channel and the gas valve, respectively, and the gas valve being used to connect to a gas source.

3. The gas separator according to claim 2, characterized in that, The air valve is a three-way valve, which includes a first end, a second end, and a third end. The second end is connected to the air pipe. The three-way valves of the multiple air distribution valve groups are connected in series through their first end and the third end. The first end of the first three-way valve is used to connect to the air source, and the third end of the last three-way valve is closed.

4. The gas separator according to any one of claims 1-3, characterized in that, Each of the annular flow channels includes an annular air inlet channel, an annular air outlet channel, and a radial connecting channel. The annular air inlet channel and the annular air outlet channel are arranged concentrically and are adjacent to each other at intervals along the radial outer and inner sides of the air distribution component. The annular air inlet channel and the annular air outlet channel are radially connected through the radial connecting channel. The annular air inlet channel is connected to the air distribution valve group. Multiple air outlet holes are evenly opened along the circumference of the annular air outlet channel.

5. The gas separator according to claim 4, characterized in that, Each of the annular flow channels further includes a radial air inlet channel and an air inlet hole. The air inlet hole is opened on the outer side wall of the air distribution component. The radial air inlet channel extends radially inward from the air inlet hole and passes through the annular air inlet channel. The air inlet hole is connected to the air distribution valve group.

6. The gas separator according to claim 5, characterized in that, The radial connecting air passage extends radially along the air distribution component. The radial connecting air passage includes a radial outer side and a radial inner side. The radial outer side intersects the annular air inlet perpendicularly, and the radial inner side is in a straight line through the annular air outlet.

7. The gas separator according to claim 6, characterized in that, The radial connecting air passage is annular, with its outer ring side connected to the annular air inlet and its inner ring side connected to the annular air outlet.

8. The gas separator according to claim 7, characterized in that, The radial air intake extends radially through the air distributor to the axial bottom of the annular air intake, and the axial top of the annular air intake communicates with the radial connecting air passage. A height difference is formed between the radial air intake and the radial connecting air passage.

9. The gas separator according to claim 4, characterized in that, The air outlet includes a first section and a second section. One end of the first section is connected to the annular air outlet section, and the other end is connected to one end of the second section. The other end of the second section axially penetrates the air distribution component. The diameter of the annular air outlet is larger than the diameter of the first section, and the diameter of the first section is larger than the diameter of the second section.

10. A semiconductor thin film device, characterized in that, It includes a spray plate and a gas distribution device, wherein the gas distribution device is the gas distribution device according to any one of claims 1-9, and the gas distribution device is disposed above the spray plate.

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