A thin film deposition reaction system

Abstract

The utility model discloses a kind of reaction systems of thin film deposition, including main body, reaction cavity is equipped in the main body, the lower portion of the main body is equipped with heating source, interval round block is equipped in the reaction cavity, the middle part in the interval round block forms deposition area, the two sides of the interval round block and the main body between respectively form air flow channel and exhaust channel, interval round block is located at the air flow channel and is equipped with several evenly distributed air injection hole, is equipped with several evenly distributed exhaust hole at the exhaust channel. By regular flow channel and dense air injection hole design can precursor be evenly sent into deposition area, overall flow field design is extremely compact, in addition, the system considers that the flow field cannot be optimized due to fixed inlet and exhaust design, cleverly designs inlet and exhaust area adjustment variable, by interval block, the size and proportion of inlet and exhaust area can be adjusted, adjustable window is provided for thin film deposition quality.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment manufacturing technology, and more specifically, to a reaction system for thin film deposition. Background Technology

[0002] Atomic layer deposition (ALD) is a commonly used thin film deposition equipment. Its basic principle involves introducing multiple precursors into a reaction chamber via alternating pulses, causing them to undergo stepwise chemical reactions on the substrate to form the desired thin film. Unlike traditional CVD processes, ALD is self-limiting. After one layer of precursor is saturated, excess precursor is purged away by an inert gas, and then another precursor is introduced, alternating sequentially. The thickness of the deposited film depends on the pulse time and number of pulses. Because each step in ALD follows the sequence of precursor adsorption → purging → reaction → purging, excess precursor introduced into the chamber each time needs to be removed as quickly as possible. Slow removal can lead to CVD-like reactions, significantly impacting film quality. Therefore, a compact chamber design is essential; minimizing the chamber volume accelerates purging time, increasing deposition speed and significantly improving film quality. Furthermore, this patented system allows for adjustment of the inlet and outlet gas zones, flexibly adapting to different material growth and experimental needs.

[0003] On the other hand, when wafers are first put into production, the process parameters in the reaction chamber need to be adjusted to determine the final production process based on the materials. This involves repeatedly adjusting parameters such as pulse time and pulse count (and correspondingly adjusting the emission rate and time of the precursor gas) to observe the thin film deposition quality. Only after multiple experiments can the optimal process parameter values ​​be obtained for subsequent mass production. Therefore, the precise adjustment of the precursor gas emission rate is crucial.

[0004] No effective solutions have yet been proposed to address the problems in the relevant technologies. Utility Model Content

[0005] In view of the problems in the related technologies, this utility model proposes a reaction system for thin film deposition to overcome the above-mentioned technical problems existing in the existing related technologies.

[0006] Therefore, the specific technical solution adopted by this utility model is as follows: A thin film deposition reaction system includes a main body, a reaction chamber inside the main body, a heating source below the main body, a spacer circular block inside the reaction chamber, a deposition zone formed in the center of the spacer circular block, an airflow channel and an exhaust channel formed between the two sides of the spacer circular block and the main body, respectively, a plurality of uniformly distributed jet holes are opened at the airflow channel of the spacer circular block, and a plurality of uniformly distributed exhaust holes are opened at the exhaust channel.

[0007] Preferably, the main body is provided with a precursor inlet one and a precursor inlet two symmetrically arranged at the airflow channel.

[0008] Preferably, the main body has an exhaust outlet at the exhaust duct.

[0009] Preferably, the spacer is provided with two sets of spacers in both the airflow channel and the exhaust channel to block the flow of gas.

[0010] Preferably, the spacer block and the main body are provided with machining grooves for mounting the spacer block.

[0011] Preferably, the top of the main body is provided with a cover plate for sealing the spacer blocks.

[0012] Preferably, the reaction chamber is provided with a baffle for blocking the airflow passage between the precursor inlet one and the precursor inlet two.

[0013] Preferably, the edges of the deposition zone are chamfered.

[0014] The beneficial effects of this invention are as follows: the precursor can be uniformly fed into the deposition zone through the regular flow channel and dense jet hole design, and the overall flow field design is extremely compact. In addition, considering that the flow field cannot be optimized due to the fixed intake and exhaust design, the system cleverly designs the intake and exhaust zone to be adjustable. The size and ratio of the intake and exhaust zone can be adjusted by the spacer block, providing an adjustable window for the film deposition quality. The reaction chamber can be made extremely small, the pulse time is short, and the gas purging is easier to complete, which can greatly accelerate the ALD reaction rate. The pulse speed and pulse time can be adjusted by adjusting the position of the spacer block. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a schematic diagram of a reaction system for thin film deposition according to an embodiment of the present invention; Figure 2 This is a side view of a thin film deposition reaction system according to an embodiment of the present invention; Figure 3 This is a top cross-sectional view of a thin film deposition reaction system according to an embodiment of the present invention; Figure 4This is a side view of a thin film deposition reaction system according to an embodiment of the present invention; Figure 5 This is a schematic diagram of the deposition zone in a thin film deposition reaction system according to an embodiment of the present invention; Figure 6 This is a bottom view of a reaction system for thin film deposition according to an embodiment of the present invention, showing spaced circular blocks. Figure 7 This is a schematic diagram of the structure of spaced circular blocks in a thin film deposition reaction system according to an embodiment of the present invention; Figure 8 This is one of the precursor delivery system diagrams according to an embodiment of the present utility model; Figure 9 This is the second diagram of the precursor delivery system according to the embodiments of this utility model.

[0017] In the picture: 1. Main body; 2. Heating source; 3. Spacer blocks; 4. Deposition zone; 5. Airflow channel; 6. Exhaust channel; 7. Jet nozzle; 8. Exhaust port; 9. Precursor inlet one; 10. Precursor inlet two; 11. Exhaust outlet; 12. Spacer block; 13. Cover plate; 14. Chamfer; 15. Processing groove. Detailed Implementation

[0018] To further illustrate the various embodiments, the present invention provides accompanying drawings, which are part of the disclosure of the present invention. These drawings are mainly used to illustrate the embodiments and can be used in conjunction with the relevant descriptions in the specification to explain the operating principles of the embodiments. With reference to these contents, those skilled in the art should be able to understand other possible implementation methods and the advantages of the present invention. The components in the figures are not drawn to scale, and similar component symbols are usually used to represent similar components.

[0019] According to an embodiment of the present invention, a reaction system for thin film deposition is provided.

[0020] Example 1: like Figure 1-9 As shown, the thin film deposition reaction system according to an embodiment of the present invention includes a main body 1, a reaction chamber inside the main body 1, a heating source 2 below the main body 1, a spacer block 3 inside the reaction chamber, a deposition zone 4 formed in the middle of the spacer block 3, an airflow channel 5 and an exhaust channel 6 formed between the spacer block 3 and the main body 1 on both sides, a plurality of uniformly distributed jet holes 7 are opened at the airflow channel 5, and a plurality of uniformly distributed exhaust holes 8 are opened at the exhaust channel 6.

[0021] Example 2: like Figure 1-9As shown, the main body 1 has a symmetrically arranged precursor inlet 9 and precursor inlet 10 at the airflow channel 5, and the main body 1 has an exhaust outlet 11 at the exhaust channel 6.

[0022] Example 3: like Figure 1-9 As shown, the spacer block 3 is provided with two sets of spacer blocks 12 for blocking gas flow in both the airflow channel 5 and the exhaust channel 6. The spacer block 3 and the main body 1 are provided with processing grooves 15 for installing the spacer blocks 12. The top of the main body 1 is provided with a cover plate 13 for sealing the spacer block 3. The reaction chamber is provided with a spacer block for blocking the airflow channel 5 between the precursor inlet 9 and the precursor inlet 10. The edge of the deposition area 4 is chamfered 14.

[0023] The function of optimizing and adjusting the intake and exhaust through deposition effect is specifically achieved by adjusting the spacer block 12 between the intake and exhaust channels to change the size and angle of the intake and exhaust areas. This allows for meeting the complex requirements of process growth at low cost and with high operability, which is not available in other equipment.

[0024] Specific adjustment method: Open the cover plate 13 and remove the spacer block 3. The spacer block 12 adjustment area is arranged with 9 adjustment areas on each side according to the 10-degree angle. The spacer block 12 ensures the accuracy of the angle of the spacer block 12 and provides a certain sealing and isolation effect through the machining groove on the reaction chamber and the machining groove on the spacer block 3. The air intake area and the exhaust area thus form an annular air area with a cross section of 10X10mm.

[0025] To facilitate understanding of the above-mentioned technical solutions of this utility model, the working principle or operation method of this utility model in actual process will be described in detail below.

[0026] In practical applications, precursor inlet 9 is introduced into the gas flow channel 5 area through a pipe. Precursor 1 is then uniformly discharged into the deposition zone 4 through the jet nozzle 7. Precursor 1 undergoes chemical adsorption on the substrate placed in the deposition zone 4. After adsorption saturation, high-purity nitrogen gas is rapidly introduced through precursor inlet 9, flowing into the deposition zone through the flow channel to quickly remove excess precursor. After purging, precursor 2 is introduced through precursor inlet 10 (precursor 1 is not introduced at this time). Precursor 2 is uniformly introduced into the deposition zone through the gas flow channel 5 and the jet nozzle, and combines with precursor 1 on the substrate surface, achieving thorough bonding. After merging, high-purity nitrogen gas is rapidly introduced into precursor inlet 2 10 (precursor 2 is closed at this time). The nitrogen gas entering the deposition zone quickly removes excess precursor 2. After thorough nitrogen purging, the cycle is repeated according to the initial operation until the number of cycles is completed. During this deposition process, the deposition zone is maintained in a low vacuum state to prevent gas phase side reactions. Since the thickness of the film depends on the number of cycles and the time to deposit the same thickness depends on the time of each introduction of precursor gas and the purging time, the compact gas flow channel and deposition zone design can greatly improve the deposition rate and film quality.

[0027] In summary, by utilizing the above-mentioned technical solution of this utility model, the precursor can be uniformly fed into the deposition zone 4 through the design of regular flow channels and dense jet holes 7. The overall flow field design is extremely compact. In addition, considering that the flow field cannot be optimized due to the fixed intake and exhaust design, the system cleverly designs a variable intake and exhaust zone. The size and ratio of the intake and exhaust zones can be adjusted by the spacer block 12, providing an adjustable window for the film deposition quality. The reaction chamber can be made extremely small, the pulse time is short, and the gas purging is easier to complete, which can greatly accelerate the ALD reaction rate. Adjusting the position of the spacer block 12 can adjust the pulse speed and pulse time.

[0028] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A reaction system for thin film deposition, characterized in that, The device includes a main body (1), a reaction chamber is provided inside the main body (1), a heating source (2) is provided below the main body (1), a spacer circular block (3) is provided inside the reaction chamber, a deposition zone (4) is formed in the middle of the spacer circular block (3), an airflow channel (5) and an exhaust channel (6) are formed between the two sides of the spacer circular block (3) and the main body (1), respectively, and a number of evenly distributed jet holes (7) are opened on the spacer circular block (3) at the airflow channel (5), and a number of evenly distributed exhaust holes (8) are opened at the exhaust channel (6).

2. The thin film deposition reaction system according to claim 1, characterized in that, The main body (1) is provided with a precursor inlet 1 (9) and a precursor inlet 2 (10) symmetrically arranged at the airflow channel (5).

3. The thin film deposition reaction system according to claim 2, characterized in that, The main body (1) has an exhaust outlet (11) located at the exhaust duct (6).

4. The thin film deposition reaction system according to claim 3, characterized in that, The spacer block (3) is located in both the airflow channel (5) and the exhaust channel (6) and is provided with two sets of spacer blocks (12) for blocking the flow of gas.

5. The thin film deposition reaction system according to claim 4, characterized in that, The spacer block (3) and the main body (1) are provided with a machining groove (15) for mounting the spacer block (12).

6. The reaction system for thin film deposition according to claim 5, characterized in that, The main body (1) is provided with a cover plate (13) on top for sealing the spacer block (3).

7. The thin film deposition reaction system according to claim 6, characterized in that, The reaction chamber is provided with a baffle for blocking the airflow channel (5) located between the precursor inlet one (9) and the precursor inlet two (10).

8. The reaction system for thin film deposition according to claim 1, characterized in that, The edge of the sedimentation zone (4) is chamfered (14).

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