Multi-zone independent temperature control heating plate of semiconductor deposition equipment

Abstract

The utility model relates to the technical field of semiconductor manufacturing equipment discloses a kind of multi-zone independent temperature control heating disc of semiconductor deposition equipment, including heating disc, the inside of heating disc is cavity, the inside top of heating disc is equipped with multiple sets of annular baffle, two sets of annular baffle are formed heat insulation groove by being close to, heating disc is divided into center area, transition area and edge area, and center heating pipe fittings, transition heating pipe fittings and edge heating pipe fittings are respectively installed in the center area, transition area and edge area of the inside of heating disc;Annular heat insulation material is inserted between two sets of annular baffle close to each other.The utility model has the advantages compared with prior art in that: multi-zone independent temperature control structure heating disc is divided into center area, transition area, edge area, and each partition integrates independent heating element;Annular heat isolation groove is arranged between adjacent partitions, and heat insulation material is filled in groove.

Claims

1. A multi-zone independent temperature-controlled heating plate for a semiconductor deposition apparatus, comprising a heating plate (1), characterized in that: The heating plate (1) has a cavity inside and a base plate (2) is installed at the bottom. Multiple sets of annular partitions (3) are installed on the top of the inner side of the heating plate (1). The multiple sets of annular partitions (3) are concentric circles, and every two sets are close to each other to form a heat insulation groove, dividing the heating plate (1) into a central area, a transition area and an edge area. The central area, transition area and edge area inside the heating plate (1) are respectively equipped with a central heating pipe (4), a transition heating pipe (5) and an edge heating pipe (6). An annular heat insulation material (11) is inserted between two sets of adjacent annular partitions (3). An air guide cavity (12) is provided inside the annular partition (3). Multiple sets of air guide pipes (13) pass through the side wall of the heating plate (1). The air guide pipes (13) pass through the inner side of the multiple sets of annular partitions (3) and are connected to the air guide cavity (12).

2. The multi-zone independent temperature-controlled heating plate of a semiconductor deposition apparatus according to claim 1, characterized in that: A fuse box (7) is installed on the central heating pipe (4), the transition heating pipe (5) and the edge heating pipe (6). The bottom of the fuse box (7) is in contact with the base plate (2) and a power supply wire (8) is installed thereon. The base plate (2) is provided with multiple sets of through holes (9) through which the power supply wire (8) passes.

3. The multi-zone independent temperature-controlled heating plate of a semiconductor deposition apparatus according to claim 1, characterized in that: The heat insulation material (11) is in contact with the annular partitions (3) on both sides, and the heat insulation material (11) has multiple sets of U-shaped grooves (15) through which the air guide pipes (13) pass.

4. The multi-zone independent temperature-controlled heating plate of a semiconductor deposition apparatus according to claim 3, characterized in that: The heat insulation material (11) is selected from boron nitride or ceramic fiber.

5. The multi-zone independent temperature-controlled heating plate of a semiconductor deposition apparatus according to claim 1, characterized in that: The air duct (13) is equipped with a connecting sleeve (14) at one end located outside the heating plate (1).

6. The multi-zone independent temperature-controlled heating plate of a semiconductor deposition apparatus according to claim 1, characterized in that: The heating plate (1) is provided with multiple sets of heat replenishing holes (10) on its upper side, and the heat replenishing holes (10) are arranged in the central area, transition area and edge area.

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