Adjustable heat recovery device and semiconductor growth apparatus

Abstract

The application provides an adjustable heat recovery device and a semiconductor growth equipment. The adjustable heat recovery device comprises a flow collecting structure, an annular heat collecting bin, first and second inlet pipes, and first and second conveying pipes. The flow collecting structure has an annular flow collecting cavity. The top of the flow collecting cavity is provided with a flow collecting inlet, and the bottom is provided with a flow collecting outlet. The annular heat collecting bin is suspended in the flow collecting cavity. The inner cavity of the annular heat collecting bin comprises an outer annular cavity and an inner annular cavity which are separated from each other. The first inlet pipe and the first conveying pipe penetrate into the flow collecting cavity and are in communication with the outer annular cavity to realize first gas conveying. The second inlet pipe and the second conveying pipe penetrate into the flow collecting cavity and are in communication with the inner annular cavity to realize second gas conveying. The adjustable heat recovery device of the application is applied to the semiconductor growth equipment. The heat of the process waste gas can be recycled according to actual needs, and / or the cold region effect can be relieved by means of the heat of the process waste gas, so that adjustable selection is realized, and the epitaxial growth efficiency and the growth quality are improved.

Description

Technical Field

[0001] This application relates to the field of equipment technology applied to the manufacture or processing of semiconductors, and more specifically, to an adjustable heat recovery device and a semiconductor growth device. Background Technology

[0002] Semiconductor growth equipment is a critical piece of equipment in the semiconductor power device manufacturing chain. The growth chamber of semiconductor growth equipment typically needs to be maintained in an ultra-high temperature region; for example, the growth temperature in silicon carbide epitaxial growth equipment can reach 1500-1750℃. However, when room-temperature process gases (including source gases, carrier gases, and purge gases) are injected into the growth chamber, a significant cold zone forms within the chamber, disrupting the originally uniform thermal boundary layer and causing a cold zone effect at the source gas injection point. Temperature fluctuations occur on the inner walls of the equipment chamber (e.g., sidewalls or top walls), resulting in a cold zone effect on the chamber walls. This cold zone effect leads to uneven thickness and doping distribution, affecting the growth rate and uniformity of silicon carbide epitaxial growth. To mitigate the cold end and cold zone effects, existing solutions often rely on increasing heating power, extending the heating cycle, or introducing complex local thermal insulation structures, leading to increased thermal inertia and shortened maintenance cycles.

[0003] Furthermore, for vertical flow growth equipment, the sidewalls within the growth chamber also need to maintain a certain temperature. To avoid pre-reaction of the process gas near the spray surface immediately after ejection, which could reduce growth efficiency, and to prevent particle deposition on the spray surface that could affect the gas flow field or even clog the spray surface, the temperature of the process gas before it exits the spray surface needs to be lower than the process temperature. During its ejection process, before reaching the substrate, it needs to be heated to the process temperature by the reaction space between the sidewalls of the growth chamber and the support surface of the support device. Therefore, the sidewall temperature within the growth chamber is crucial to the growth efficiency and quality of epitaxial growth. Adjusting and maintaining the sidewall temperature of the growth chamber also increases the complexity of the equipment and energy consumption.

[0004] Furthermore, the process exhaust gas after the reaction in the growth chamber carries a large amount of heat and is directly emitted, lacking efficient means of waste heat recovery and resource reuse. Therefore, how to reduce the cold zone effect and how to effectively utilize the waste heat of the process exhaust gas while also improving the quality of epitaxial film formation have become urgent problems to be solved. Utility Model Content

[0005] The purpose of this application is to provide an adjustable heat recovery device and a semiconductor growth equipment. The semiconductor growth equipment, by setting an adjustable heat recovery device, can effectively recover and utilize the heat of process waste gas according to actual needs, and / or choose to use the heat of process waste gas to alleviate the cold zone effect, thereby achieving adjustable selectivity and improving the growth efficiency and growth quality of epitaxial growth.

[0006] In one aspect, an adjustable heat recovery device is provided, including a collection structure, an annular heat collection chamber, a first inlet pipe, a first delivery pipe, a second inlet pipe, and a second delivery pipe.

[0007] The gas collection structure has an annular gas collection cavity with a gas collection inlet at the top and a gas collection outlet at the bottom, allowing gas to enter the cavity from the inlet and exit through the outlet. An annular heat collection chamber is suspended within the cavity; its inner cavity comprises a separated outer annular cavity and an inner annular cavity, with the outer annular cavity surrounding the inner annular cavity. A first inlet pipe and a first delivery pipe penetrate the cavity and connect to the outer annular cavity to facilitate the first gas delivery. A second inlet pipe and a second delivery pipe penetrate the cavity and connect to the inner annular cavity to facilitate the second gas delivery.

[0008] In one feasible approach, the volume of the outer annular cavity does not exceed the volume of the inner annular cavity.

[0009] In one feasible embodiment, an annular heat collection chamber is provided with an annular partition plate extending circumferentially along the flow-collecting cavity to divide the inner cavity of the annular heat collection chamber into an outer annular cavity and an inner annular cavity; the inner annular cavity includes a top-inner sidewall that forms an inner top structure with the annular partition plate, and the outer annular cavity includes a top-outer sidewall that forms an outer top structure with the annular partition plate; the top-inner sidewall, the top-outer sidewall, and the top of the annular partition plate intersect, and the exposed surfaces of the top-inner sidewall and the top-outer sidewall are both set as inclined flow-guiding slopes.

[0010] In one feasible embodiment, the outer annular cavity further includes an outer bottom structure that is connected to and communicates internally with the outer top structure to increase the volume, and / or the inner annular cavity further includes an inner bottom structure that is connected to and communicates internally with the inner top structure to increase the volume.

[0011] In one feasible scheme, the total height of the annular heat collection chamber is h, the height of the manifold cavity is H, and the height of the lowest of the top inner wall and the top outer wall is h1; wherein, h / 2≤h1≤h, and / or H / 2≤h1<H.

[0012] In one feasible scheme, the acute angles of inclination of the top towards the outer side wall and the top towards the inner side wall are α1 and α2, respectively, where 45°≤α1<90° and 45°≤α2<90°.

[0013] In one feasible embodiment, a separator is arranged radially within the annular heat collection chamber to break the connectivity between the annular spaces within the outer and inner annular cavities. A first inlet pipe on the outer annular cavity and a first delivery pipe are positioned near opposite sides of the separator and communicate with the interior of the outer annular cavity, respectively. A second inlet pipe on the inner annular cavity and a second delivery pipe are positioned near opposite sides of the separator and communicate with the interior of the inner annular cavity, respectively.

[0014] In one feasible scheme, both the axial cross-sectional outer contour structure of the annular heat collection chamber and the axial cross-sectional outer contour structure of the flow collection structure are axisymmetric structures, and the central axis of the axial cross-sectional outer contour structure of the annular heat collection chamber coincides with the central axis of the axial cross-sectional outer contour structure of the flow collection structure.

[0015] Secondly, a semiconductor growth apparatus is also provided, including a reaction chamber, a housing structure and the aforementioned adjustable heat recovery device, wherein an annular heat collection chamber is suspended inside the adjustable heat recovery device and a heat collection outlet is provided at the bottom.

[0016] The reaction chamber has a gas injection device at the top and a tail gas exhaust port at the bottom. An internal support device is located inside, with its top surface facing the gas injection device. A casing structure is set on the inner wall of the reaction chamber and surrounds the support device, forming a pre-reserved cavity between them. An adjustable heat recovery device is positioned around the area where the support device is located, between the casing structure and the support device area. The top surface of the adjustable heat recovery device is lower than the top surface of the support device, and its collection outlet connects to the tail gas exhaust port. The first and second inlet pipes of the annular heat collection chamber extend to the outside of the reaction chamber.

[0017] The first delivery pipe of the annular heat collection chamber connects the outer annular cavity and the gas injection device, and extends within the cavity wall of the reaction chamber, allowing the hot gas from the outer annular cavity to mix with the gas in the gas injection device to increase the gas temperature. The second delivery pipe of the annular heat collection chamber connects the inner annular cavity and the reserved cavity, and extends within the cavity wall of the reaction chamber, delivering the hot gas from the inner annular cavity to the reserved cavity to increase the temperature of the inner sidewall of the reaction chamber.

[0018] In one feasible embodiment, the top surface of the adjustable heat recovery device is lower than the bottom surface of the supporting device.

[0019] Compared with the prior art, the beneficial effects of this application include at least the following: In the adjustable heat recovery device of this application, the hot gas flow enters the collecting cavity through the collecting inlet at the top of the collecting structure, and after fully contacting the surface of the suspended annular heat collection chamber, it is discharged from the collecting outlet at the bottom of the collecting structure. This heats the gas in the outer and inner annular cavities of the annular heat collection chamber, thereby significantly increasing the temperature of the discharged gas in the outer and inner annular cavities. Enclosed by the collecting structure, the hot gas flow is guided and concentrated, resulting in better contact between the hot gas flow and the annular heat collection chamber as it passes through the collecting cavity, leading to a more significant heating effect on the gas in the annular heat collection chamber.

[0020] Furthermore, since the annular heat collection chamber has two cavities, an outer annular cavity and an inner annular cavity, different gases can be heated separately, and the two heated gases can be used in different ways.

[0021] Meanwhile, in the semiconductor growth equipment with the aforementioned adjustable heat recovery device, the annular heat collection chamber, being located on the flow path of the high-temperature process waste gas, can effectively absorb the heat of the high-temperature process waste gas and increase the temperature of the gas in the outer annular cavity and the inner annular cavity of the annular heat collection chamber.

[0022] Furthermore, the heated gas in the outer annular cavity is transported to the gas injection device through the first delivery pipe and mixed with the gas in the gas injection device to increase the temperature of the gas in the gas injection device, reduce the damage to the originally uniform thermal boundary layer caused by the gas injection into the reaction chamber, reduce the cold zone effect generated when entering the reaction chamber, make the temperature gradient in the reaction chamber more uniform, and help to improve the gas pyrolysis efficiency and improve the epitaxial layer growth efficiency.

[0023] Furthermore, the heated gas in the inner annular cavity is transported by the second delivery pipe to the reserved cavity on the inner sidewall of the reaction cavity to heat the inner sidewall of the reaction cavity. This helps to fully utilize the thermal energy of the process waste gas to achieve a reasonable temperature gradient in the growth space between the top of the reaction cavity and the support device. It ensures that the process gas ejected by the gas injection device can be heated to the process temperature range near the top of the substrate and avoids pre-reaction after being ejected from the spray surface. This is beneficial to improving the growth efficiency and growth quality of epitaxial growth.

[0024] In summary, the semiconductor growth equipment of this application, by setting up an adjustable heat recovery device, can effectively recover and utilize the heat of process waste gas. Combined with the dual-cavity setting of the annular heat collection chamber, the gas heated by the two cavities is respectively delivered to the gas injection device and the reserved cavity on the side wall of the reaction chamber. This can not only alleviate the cold zone effect caused by gas injection of the gas injection device, but also participate in the temperature gradient regulation of the growth space in the reaction chamber, thereby effectively improving the growth efficiency and growth quality of epitaxial growth.

[0025] Furthermore, since the heat from the process exhaust gas is used to improve the cold zone problem and regulate the temperature gradient of the growth space, it is no longer necessary to simply rely on increasing heating power, extending the heating cycle, or introducing complex local insulation structures to improve the cold zone problem. This helps to reduce the thermal inertia of the equipment and extend the maintenance cycle, while also reducing energy consumption. Attached Figure Description

[0026] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a three-dimensional structural diagram of an adjustable heat recovery device according to an embodiment of this application.

[0028] Figure 2 for Figure 1 Exploded view of the intermediate heat recovery unit.

[0029] Figure 3 This is a three-dimensional structural diagram of the first type of annular heat collection chamber shown in the embodiments of this application.

[0030] Figure 4 for Figure 3 Side view of the central annular solar collector.

[0031] Figure 5 For along Figure 4 Sectional view of AA.

[0032] Figure 6 for Figure 5 A magnified view of a portion of the central isolation component.

[0033] Figure 7 This is a three-dimensional structural diagram of the second type of annular heat collection chamber shown in an embodiment of this application.

[0034] Figure 8 for Figure 7 Side view of the central annular solar collector.

[0035] Figure 9 For along Figure 8 A cross-sectional view of BB.

[0036] Figures 10 to 17 Axial cross-sectional views of different heat recovery devices under different assembly conditions.

[0037] Figure 18 This is a schematic diagram of the structure of a first semiconductor growth apparatus as shown in an embodiment of this application.

[0038] Figure 19 This is a schematic diagram of the structure of a second semiconductor growth apparatus as shown in an embodiment of this application.

[0039] Figure 20 This is a schematic diagram illustrating the composition of a semiconductor growth apparatus including a gas supply and suction device, as shown in an embodiment of this application.

[0040] In the diagram: 10. Adjustable heat recovery device; 20. Semiconductor growth equipment; 1. Current collector structure; 11. Current collector inlet; 12. Current collector outlet; 13. Support column; 101. Current collector cavity; 102. Current collector ring; a. First flow channel; b. Second flow channel; 2. Annular heat collection chamber; 21. Annular partition plate; 22. Isolation component; 201. Outer annular cavity; 2011. Top facing the outer side wall; 2012. Bottom facing the outer side wall; 202. Inner annular cavity; 2021. Top facing the inner side wall; 2022. Bottom facing the inner side wall; A1. First inlet; A2, First outlet; B1, Second inlet; B2, Second outlet; 23, Support foot; 31, First inlet pipe; 32, Second inlet pipe; 33, First conveying pipe; 34, Second conveying pipe; 4, Reaction chamber; 41, Gas injection device; 42, Exhaust gas outlet; 43, Bearing device; 44, Annular channel; 45, Heat insulation layer; 5, Cover structure; 51, Reserved cavity; 61, First gas supply device; 62, Second gas supply device; 63, Third gas supply device; 7, Air extraction device; 8, Rotary drive device. Detailed Implementation

[0041] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0042] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0043] like Figure 1 and Figure 2 As shown, this application embodiment provides an adjustable heat recovery device 10, including a flow collection structure 1, an annular heat collection chamber 2, a first inlet pipe 31, a first delivery pipe 33, a second inlet pipe 32, and a second delivery pipe 34.

[0044] The flow collection structure 1 has an annular flow collection cavity 101, with a flow collection inlet 11 at the top and a flow collection outlet 12 at the bottom, allowing gas to enter the flow collection cavity 101 from the flow collection inlet 11 and exit through the flow collection outlet 12. The annular heat collection chamber 2 is suspended inside the flow collection cavity 101; the inner cavity of the annular heat collection chamber 2 includes a mutually separated outer annular cavity 201 and an inner annular cavity 202; the outer annular cavity 201 surrounds the inner annular cavity 202.

[0045] The first inlet pipe 31 and the first delivery pipe 33 pass through the manifold cavity 101 and then communicate with the outer annular cavity 201 to achieve the first gas delivery. The second inlet pipe 32 and the second delivery pipe 34 pass through the manifold cavity 101 and then communicate with the inner annular cavity 202 to achieve the second gas delivery.

[0046] It should be noted that the annular heat collection chamber 2 is made of a thermally conductive material, which can be graphite or silicon carbide.

[0047] In the adjustable heat recovery device 10 of this embodiment, the hot airflow enters the collecting cavity 101 from the collecting inlet 11 at the top of the collecting structure 1, and after fully contacting the surface of the suspended annular heat collection chamber 2, it is discharged from the collecting outlet 12 at the bottom of the collecting structure 1, thereby heating the gas in the outer annular cavity 201 and the inner annular cavity 202 of the annular heat collection chamber 2, so that the temperature of the gas discharged from the outer annular cavity 201 and the inner annular cavity 202 can be significantly increased.

[0048] Furthermore, since the annular heat collection chamber 2 has two cavities, an outer annular cavity 201 and an inner annular cavity 202, different gases can be heated separately, and the two heated gases can be used in different ways.

[0049] Meanwhile, under the enclosure of the flow collection structure 1, it plays a role in guiding and gathering the hot airflow, so that when the hot airflow passes through the flow collection cavity 101, it has relatively good contact with the annular heat collection chamber 2, and the heating and temperature rise effect on the gas in the annular heat collection chamber 2 is more obvious.

[0050] like Figure 18 and Figure 19 As shown in the figure, this application embodiment also provides a semiconductor growth apparatus 20, including a reaction chamber 4, a housing structure 5 and the aforementioned adjustable heat recovery device 10. The adjustable heat recovery device is provided with an annular heat collection chamber 2 suspended inside, and a heat collection outlet 12 is provided at the bottom.

[0051] The reaction chamber 4 has a gas injection device 41 at the top and a tail gas discharge port 42 at the bottom. Inside, there is a support device 43, with its top surface facing the gas injection device 41. A casing structure 5 is disposed on the inner wall of the reaction chamber 4 and surrounds the support device 43, forming a reserved cavity 51 between it and the inner wall of the reaction chamber 4. An adjustable heat recovery device 10 is disposed around the area where the support device 43 is located, between the casing structure 5 and the area where the support device 43 is located. The top surface of the adjustable heat recovery device 10 is lower than the top surface of the support device 43, and its collection outlet 12 connects to the tail gas discharge port 42.

[0052] The first inlet pipe 31 and the second inlet pipe 32 of the annular heat collection chamber 2 extend to the outside of the reaction chamber 4. The first delivery pipe 33 of the annular heat collection chamber 2 connects the outer annular cavity 201 and the gas injection device 41, and extends within the cavity wall of the reaction chamber 4, so that the hot gas in the outer annular cavity 201 mixes with the gas in the gas injection device 41 to increase the gas temperature. The second delivery pipe 34 of the annular heat collection chamber 2 connects the inner annular cavity 202 and the reserved cavity 51, and extends within the cavity wall of the reaction chamber 4, so as to deliver the hot gas in the inner annular cavity 202 to the reserved cavity 51 to increase the temperature of the inner wall of the reaction chamber 4.

[0053] In some embodiments, such as Figure 18 As shown, an annular channel 44 is formed between the outer wall of the support device 43 and the inner wall of the reaction chamber 4. The adjustable heat recovery device 10 is disposed in the annular channel 44. The flow collection structure 1 can be an independent component, and the top surface of the flow collection structure 1 is set to be lower than the support top surface of the support device 43.

[0054] In some embodiments, such as Figure 19 As shown, the annular channel 44 formed between the outer wall of the supporting device 43 and the inner wall of the reaction chamber 4 directly serves as the flow collection structure 1, and the outer wall of the supporting device 43 and the inner wall of the reaction chamber 4 form the side wall structure of the flow collection structure 1. Therefore, the annular heat collection chamber 2 is suspended in the flow collection cavity 101, that is, the annular heat collection chamber 2 is suspended in the annular channel 44, while the top of the annular heat collection chamber 2 is lower than the top surface of the supporting device 43.

[0055] In this embodiment, the gas provided by the gas injection device 41 includes a reaction source gas. The reaction source gas includes a silicon-containing gas carried by a carrier gas and a carbon-containing gas carried by a carrier gas. Silicon-containing gases include silanes such as SiH4, trichlorosilanes such as SiHCl3, TCS, dichlorosilanes such as SiH2Cl2, and DCS, and carbon-containing gases include hydrocarbons such as propane (C3H8) and ethylene (C2H4).

[0056] In this embodiment, the gas provided by the gas injection device 41 may also include purge gas.

[0057] In this embodiment, the gas injection device 41 may be provided with a process gas channel and a purge gas channel, and the outer annular cavity 201 of the annular heat collection chamber 2 is connected to either the process gas channel or the purge gas channel through the first delivery pipe 33.

[0058] In this embodiment, the first gas transported in the outer annular cavity 201 can be a carrier gas or a purge gas, and the second gas input into the inner annular cavity 202 is a purge gas. The main function of the carrier gas is to transport the reaction source gas into the reaction chamber, while simultaneously diluting the concentration of the reaction source gas, controlling the reaction rate and deposition uniformity. Hydrogen (H2) is commonly used as the carrier gas in SiC epitaxy, but argon (Ar) or a mixture of hydrogen (H2) and argon (Ar) can also be used. The purge gas is used between process steps or after the process to quickly remove residual reaction source gas, byproducts, or impurities from the reaction chamber, preventing cross-contamination and particle deposition that affects film quality. The purge gas is typically hydrogen (H2) or an inert gas such as nitrogen (N2) or argon (Ar).

[0059] In this embodiment, as Figure 20 As shown, the semiconductor growth apparatus 20 also includes a first gas supply device 61, a second gas supply device 62, a third gas supply device 63, and a vacuum device 7. The first gas supply device 61 is connected to the gas injection device 41 and is used to supply reaction source gas or purge gas to the gas injection device 41. The second gas supply device 62 is located outside the reaction chamber 4 and is connected to the first inlet pipe 31 to provide carrier gas or purge gas. The third gas supply device 63 is located outside the reaction chamber 4 and is connected to the second inlet pipe 32 to provide purge gas. The vacuum device 7 is connected to the exhaust port 42 of the reaction chamber 4 and is used to extract process waste gas from the reaction chamber 4.

[0060] Specifically, in the semiconductor growth apparatus 20 of this embodiment, the reaction source gas entering the reaction chamber 4 via the gas injection device 41 flows through the top surface of the support device 43 and the exposed surfaces of each substrate. After a portion of the reaction source gas undergoes epitaxial reaction, the remaining gas and reaction byproducts, as process waste gas, enter the annular channel 44 between the outer wall of the support device 43 and the inner wall of the reaction chamber 4. The gas flows through the annular heat collection chamber 2 located in the annular channel 44 to fully contact its surface, thereby heating the gas in the outer annular cavity 201 and the inner annular cavity 202 of the annular heat collection chamber 2. The heated gas in the outer annular cavity 201 is transported to the gas injection device 41 by the first delivery pipe 33, and the heated gas in the inner annular cavity 202 is transported to the reserved cavity 51 in the top wall of the reaction chamber 4 by the second delivery pipe 34.

[0061] In some embodiments, the gas injection device 41 of the semiconductor growth apparatus 20 faces the support device 43, and the gas discharged from the gas injection device 41 flows vertically in a near-vertical manner to grow an epitaxial layer on the substrate surface at the bottom. Furthermore, the semiconductor growth apparatus 20 may include a rotation drive device 8 to drive the support device 43 to rotate. Specific implementation methods are conventional techniques in the art and will not be elaborated here.

[0062] Because the gas supplied by the gas injection device 41 has a certain flow rate, and the gas extraction device 7 has a certain suction effect on the gas in the cavity, both work together to ensure the stability of the flow field on and near the top surface of the support device 43. A stable gas flow field also contributes to the uniformity of the substrate surface temperature, thereby ensuring good epitaxial wafer quality. Furthermore, when the rotation drive device 8 is needed to assist in the homogenization of the gas on the top surface of the support device 43 to further improve the quality of the epitaxial wafer, the rotation of the support device 43, the flow rate of the gas supplied by the gas injection device 41, and the suction of the gas extraction device 7 together ensure a stable gas flow field.

[0063] Since the annular channel 44 is closer to the top surface of the support device 43 and the channel is relatively narrow, once the exhaust gas becomes turbulent as it flows through the annular channel 44, the turbulent airflow can easily affect the stable gas flow field in the reaction space above the support device 43, which is detrimental to the film formation quality of the epitaxial wafer.

[0064] Therefore, the height of the annular heat collection chamber 2 is set lower than the top surface of the supporting device 43 to reduce the impact of turbulence generated by the collision of process waste gas and the annular heat collection chamber 2 on the air field above the supporting device 43. Furthermore, the top surface of the adjustable heat recovery device 10 is set lower than the bottom surface of the supporting device 43, thereby keeping the top surface of the adjustable heat recovery device 10 as far away as possible from the top surface of the supporting device 43, further reducing the impact of turbulence generated at the adjustable heat recovery device 10 on the edge air field of the supporting device 43.

[0065] In this embodiment, the annular heat collection chamber 2 of the semiconductor growth equipment 20 is located in the flow path of the high-temperature process waste gas, which can effectively absorb the heat of the high-temperature process waste gas and increase the temperature of the gas in the outer annular cavity 201 and the inner annular cavity 202 of the annular heat collection chamber 2.

[0066] On the one hand, the heated gas in the outer annular cavity 201 is transported to the gas injection device 41 by the first delivery pipe 33 and mixed with the gas in the gas injection device 41 to increase the temperature of the gas in the gas injection device 41, reduce the damage to the originally uniform thermal boundary layer caused by the gas injection into the reaction chamber 4, reduce the cold zone effect generated when entering the reaction chamber 4, make the temperature gradient in the reaction chamber 4 more uniform, and help to improve the gas cracking efficiency and improve the epitaxial layer growth efficiency.

[0067] While preheating the purge gas in the input gas injection device 41 before introducing it can solve the problem of cold zones in the reaction chamber 4, the additional preheating structure complicates the external device both structurally and functionally, and generates additional energy consumption. Mixing the hot purge gas provided by the outer annular cavity 201 with the existing purge gas in the gas injection device 41 increases the temperature of the purge gas in the gas injection device 41. By controlling the flow rates of the hot purge gas in the outer annular cavity 201 and the purge gas in the gas injection device 41, combined with the temperature achievable through the heating control of the carrier device 43, the mixed purge gas can reach the target temperature. Similarly, mixing the hot carrier gas in the outer annular cavity 201 with the reaction source gas carried by the carrier gas in the gas injection device 41 increases the temperature of the mixed gas. By rationally designing the flow rates of the hot carrier gas in the outer annular cavity 201, the carrier gas in the gas injection device 41, and the reaction source gas, combined with the temperature achievable through the heating control of the carrier device 43, the mixed reaction source gas containing the carrier gas can also reach the target temperature.

[0068] On the other hand, the heated gas in the inner annular cavity 202 is transported by the second delivery pipe 34 to the reserved cavity 51 on the inner sidewall of the reaction chamber 4 to heat the inner sidewall of the reaction chamber 4. This helps to make full use of the thermal energy of the process waste gas to achieve a reasonable temperature gradient between the top of the reaction chamber 4 and the support device 43, ensuring that the process gas ejected by the gas injection device 41 can be heated to the process temperature range near the top of the substrate and avoiding pre-reaction after being ejected from the spray surface. This helps to improve the growth efficiency and growth quality of epitaxial growth.

[0069] In summary, the semiconductor growth apparatus 20 of this embodiment can effectively recover and utilize the heat of process waste gas by setting up the annular heat collection chamber 2. With the dual-cavity setting of the annular heat collection chamber 2, the gas heated by the dual cavities is respectively delivered to the gas injection device 41 and the reserved cavity 51 on the side wall of the reaction chamber 4. This can not only alleviate the cold zone effect caused by the gas injection of the gas injection device 41, but also participate in the temperature gradient regulation of the growth space in the reaction chamber 4, thereby effectively improving the growth efficiency and growth quality of epitaxial growth, and effectively reducing energy consumption.

[0070] Furthermore, since the heat from the process exhaust gas is used to improve the cold zone problem and regulate the temperature gradient of the growth space, it is no longer necessary to simply rely on increasing heating power, extending the heating cycle, or introducing complex local insulation structures to improve the cold zone problem. This helps to reduce the thermal inertia of the equipment and extend the maintenance cycle, while also reducing energy consumption.

[0071] To avoid pre-reaction of the process gas near the spray surface immediately after ejection, which would reduce growth efficiency and potentially cause particle deposition on the spray surface, affecting the gas flow field or even clogging the spray surface, the inlet temperature of the reaction source gas needs to be lower than the process temperature inside the reaction chamber 4. The reaction source gas is heated by the reaction space after ejection and before reaching the top surface of the support device 43, thereby reaching the process temperature. This process is greatly affected by the temperature field between the top wall of the reaction chamber 4 and the support device 43. Moreover, the temperatures of the top wall of the reaction chamber 4 and the support device 43 can be monitored. Because the inner annular cavity 202 is closer to the side where the support device 43 is located, its temperature can be considered to be closer to the temperature of the support device 43 than that of the outer annular cavity 201, or even comparable to the temperature of the support device 43. Therefore, by controlling the temperature of the side wall of the reaction chamber 4 through the heating gas in the inner annular cavity 202, combined with the temperature control of the support device 43 itself, a reasonable temperature gradient can be achieved between the top wall of the reaction chamber 4 and the support device 43, effectively improving the growth efficiency and quality of epitaxial growth.

[0072] In some embodiments, such as Figure 1 and Figure 2 As shown, when the flow collection structure 1 of the adjustable heat recovery device 10 is an independent component, the flow collection structure 1 may include a support column 13 disposed on the outer bottom surface of the flow collection cavity 101. The support column 13 may be a hollow structure, with both ends used to connect to the tail gas discharge port 42 of the reaction chamber 4 and the flow collection cavity 101, respectively. The hollow support column 13 can serve to transport gas and provide support, or a solid support column may be provided separately to support the flow collection structure 1. The annular heat collection chamber 2 may also include a support foot 23, which is disposed between the inner bottom surface of the flow collection cavity 101 and the bottom of the annular heat collection chamber 2 to support the annular heat collection chamber 2, thereby preventing the annular heat collection chamber 2 from blocking the flow collection outlet 12 and ensuring the smooth flow of process waste gas.

[0073] In some embodiments, such as Figure 2 As shown, the flow collection structure 1 may include a flow collection ring 102. The flow collection cavity 101 is provided with an upward-facing annular opening, and its bottom surface is provided with several flow collection outlets 12 that communicate with the hollow support columns 13. The flow collection ring 102 covers the annular opening of the flow collection cavity 101, and several circumferentially evenly distributed flow collection inlets 11 may be provided on the flow collection ring 102. The shape of the flow collection inlets 11 may be a circular hole, an oblong hole, etc.

[0074] In some embodiments, such as Figure 1 and Figure 2 As shown, the first inlet pipe 31 of the annular heat collection chamber 2 can be connected to the outer annular cavity 201 from the bottom surface of the outer annular cavity 201, and the second inlet pipe 32 can be connected to the inner annular cavity 202 from the bottom surface of the inner annular cavity 202.

[0075] Alternatively, if the bottom space of reaction chamber 4 is underutilized, to avoid interference with other components that would be detrimental to the process, such as... Figure 15 As shown, the thickness of the bottom wall of the outer annular cavity 201 can be greater than the thickness of the bottom wall of the inner annular cavity 202, so that the height of the inner bottom surface of the outer annular cavity 201 is higher than the height of the inner bottom surface of the inner annular cavity 202. The second inlet pipe 32 can penetrate the bottom wall of the outer annular cavity 201 from the side to communicate with the interior of the inner annular cavity 202. The first inlet pipe 31 can communicate with the interior of the outer annular cavity 201 from the side.

[0076] In some embodiments, such as Figure 5 and Figure 9 As shown, the annular heat collection chamber 2 is provided with an annular partition plate 21 extending circumferentially along the flow-collecting cavity 101. The annular partition plate 21 divides the inner cavity of the annular heat collection chamber 2 into an outer annular cavity 201 and an inner annular cavity 202.

[0077] In some embodiments, such as Figures 3 to 6 As shown, a separator 22 can be radially arranged inside the annular heat collection chamber 2 to break the communication between the annular spaces inside the outer annular cavity 201 and the inner annular cavity 202. The first inlet A1 of the first inlet pipe 31 on the outer annular cavity 201 and the first delivery pipe 33 are used to connect the first outlet A2 of the outer annular cavity 201, respectively, close to opposite sides of the separator 22 and communicating with the interior of the outer annular cavity 201. The second inlet B1 of the second inlet pipe 32 on the inner annular cavity 202 and the second delivery pipe 34 are used to connect the second outlet B2 of the inner annular cavity 202, respectively, close to opposite sides of the separator 22 and communicating with the inner annular cavity 202.

[0078] Therefore, when the gas flows through the outer annular cavity 201 and the inner annular cavity 202, its gas path flows along the circumference of the annular heat collection chamber 2 through most of the space of the outer annular cavity 201 and the inner annular cavity 202 before flowing out, so as to maximize the gas path length, thereby improving the heat exchange and heating effect. In addition, the longer gas path can also improve the uniformity of the gas temperature after heating.

[0079] Alternatively, in some embodiments, the first inlet A1 and the first outlet A2 are located in different halves of the annular heat collection chamber 2, and the second inlet B1 and the first outlet B2 are located in different halves of the annular heat collection chamber 2. For example, as Figure 7 , Figure 8 and Figure 9 As shown, the first inlet A1 and the first outlet A2 are radially opposite each other, and the second inlet B1 and the first outlet B2 are radially opposite each other. The gas path length can also be increased to improve the heat exchange and heating effect accordingly.

[0080] In some embodiments, such as Figures 10 to 15 and Figure 17As shown, the outer contour shape of the axial cross-section of the annular heat collection chamber 2, composed of the outer annular cavity 201 and the inner annular cavity 202, can be an axisymmetric structure; or, as shown... Figure 16 As shown, the outer contour shape of the axial section of the annular heat collection chamber 2 can be an asymmetrical structure. Furthermore, it is preferable that the outer contour structure of the axial section of the heat collection structure 1 is an axisymmetric structure.

[0081] In this embodiment, as Figures 10 to 15 and Figure 17 As shown, when both the axial cross-sectional outer contour structure of the annular heat collection chamber 2 and the axial cross-sectional outer contour structure of the flow collection structure 1 are axisymmetric structures, it is preferable to arrange the central axis of the axial cross-sectional outer contour structure of the annular heat collection chamber 2 to coincide with the central axis of the axial cross-sectional outer contour structure of the flow collection structure 1. This is beneficial to improving the consistency of the flow resistance of the gas channels on both sides of the annular heat collection chamber 2, avoiding local strong turbulence and its potential adverse effects on the process flow field near the top of the support device 43 of the semiconductor growth equipment 20. If the process flow field near the top of the support device 43 is significantly disturbed, it will affect the growth quality of the epitaxial wafer, such as affecting the film uniformity.

[0082] In some embodiments, such as Figure 10 As shown, the axial cross-sectional shape of the annular heat collection chamber 2 can be rectangular. When gas flows in through the collection inlet 11 of the collection structure 1, considering the top of the rectangle and the inner wall structure of the collection cavity 101, significant turbulence will be generated when receiving the incoming flow, which will hinder the smooth discharge of high-temperature process waste gas and may cause airflow turbulence at the edge of the bearing device 43, affecting the growth quality of the epitaxial wafer edge.

[0083] Therefore, in some embodiments, such as Figures 11 to 17 As shown, at least a portion of the inner and outer walls of the annular heat collection chamber 2 are provided with guide slopes, which are configured to guide the downward-moving airflow.

[0084] Specifically, in some embodiments, such as Figures 11 to 17 As shown, the annular heat collection chamber 2 is provided with an annular partition plate 21 extending circumferentially along the flow-collecting cavity 101 to divide the inner cavity of the annular heat collection chamber 2 into an outer annular cavity 201 and an inner annular cavity 202. The inner annular cavity 202 includes a top-inner sidewall 2021 that forms an inner top structure with the annular partition plate 21, and the outer annular cavity 201 includes a top-outer sidewall 2011 that forms an outer top structure with the annular partition plate 21. The top of the top-inner sidewall 2021, the top-outer sidewall 2011, and the top of the annular partition plate 21 intersect, and the exposed surfaces of the top-inner sidewall 2021 and the top-outer sidewall 2011 are both set as inclined flow-guiding slopes. The setting of the flow-guiding slopes can significantly reduce the obstruction effect on the airflow, reduce the generation of turbulence, facilitate the smooth discharge of process waste gas, and reduce interference with the airflow at the edge of the supporting device 43.

[0085] In this embodiment, such as Figure 11 As shown, the entire area of ​​the inner and outer sidewalls of the annular heat collection chamber 2 can be configured as flow-guiding slopes, that is, the top inner sidewall 2021 and the top outer sidewall 2011 are the inner and outer sidewalls of the annular heat collection chamber 2, which can significantly reduce the obstruction effect on airflow. However, for Figure 11 The proposed structural design may sacrifice some of the internal volume of the annular heat collection chamber 2.

[0086] Therefore, in some embodiments, such as Figures 12 to 17 As shown, the outer annular cavity 201 may further include an outer bottom structure that is connected to and communicates with the outer top structure to increase the volume, and / or the inner annular cavity 202 may further include an inner bottom structure that is connected to and communicates with the inner top structure to increase the volume.

[0087] Specifically, the outer bottom structure includes a bottom-facing outer wall 2012 that is connected to the bottom of the top-facing outer wall 2011 and extends axially, and the inner bottom structure includes a bottom-facing inner wall 2022 that is connected to the bottom of the top-facing inner wall 2021 and extends axially.

[0088] In this embodiment, the volume of the annular heat collection chamber 2 is as large as possible to ensure that the heat exchange area between the high-temperature process waste gas and the annular heat collection chamber 2 is as large as possible, so as to maximize the utilization of the heat of the process waste gas. Therefore, it is preferable to design the cross-section of the bottom of the annular heat collection chamber 2 to be larger than the cross-section of the top, that is, the radial dimensions of the inner and outer bottom structures of the annular heat collection chamber 2 are larger than the radial dimensions of the inner and outer top structures.

[0089] In this embodiment, as Figure 12 As shown, the total height of the annular heat collection chamber 2 is h, and the height of the lowest of the top inner sidewall 2021 and the top outer sidewall 2011 (that is, the guide slope with the smallest height) is h1, where h / 2≤h1≤h. This is to further reduce the gas flow resistance in the process waste gas flow channel near the guide slope to avoid local strong turbulence, and also to increase the heating efficiency and heating effect of the gas in the chamber by increasing the contact area between the hot process waste gas and the annular heat collection chamber 2.

[0090] In this embodiment, as Figure 12 As shown, the channel formed by the guide slope of the annular heat collection chamber 2 and the inner wall of the collection structure 1 can be called the first flow channel a, and the channel formed by the lower part of the guide slope and the inner wall of the collection structure 1 can be called the second flow channel b.

[0091] like Figure 17As shown, if the height h1 of the guide slope is less than half of the total height h of the annular heat collection chamber 2, the inclination angle of the guide slope will also be relatively small. When the high-temperature process waste gas enters through the collection inlet 11 of the collection structure 1, it passes through the space of the first flow channel a and collides with the top of the annular heat collection chamber 2. In the narrow space, it bounces rapidly and collides with each other, forming a relatively obvious and chaotic turbulent state. A large number of vortices are generated rapidly, which may affect the growth of the epitaxial wafer edge. The process waste gas continues to enter the space of the second flow channel b. Since the bottom structure of the annular heat collection chamber 2 is relatively large, the space of the second flow channel b will be smaller than that of the first flow channel a, and the flow resistance will increase, causing the airflow to change for the second time. This change will further cause turbulence in the space of the first flow channel a above, which will further affect the airflow turbulence at the edge of the bearing device 43 and affect the growth quality of the epitaxial wafer edge.

[0092] Furthermore, in some embodiments, such as Figure 12 As shown, the height of the flow-collecting cavity 101 of the flow-collecting structure 1 is H, and the height of the lowest of the top inner wall 2021 and the top outer wall 2011 (i.e., the guide slope with the smallest height) is h1, where H / 2 ≤ h1 < H. Within this limitation, when the process waste gas enters through the flow-collecting inlet 11 of the flow-collecting structure 1, the turbulence in the space of the first flow channel a can be significantly reduced. Furthermore, due to the significant downward shift of the position of the second flow channel b, the area where turbulence is generated also shifts significantly downward, relatively away from the flow-collecting inlet 11 of the flow-collecting structure 1, thereby reducing the impact of turbulence on the growth of the epitaxial wafer edge.

[0093] Furthermore, in this embodiment, since h1≥H / 2 is set, it is ensured that the height of the guide slope occupies at least half of the internal height of the flow collection structure 1, so that the space of the first flow channel a is as large as possible, and the airflow can be effectively diffused and buffered.

[0094] In some embodiments, such as Figures 11 to 12 , Figures 14 to 17 As shown, the top of the annular heat collection chamber 2 (i.e., the intersection of the top facing the inner wall 2021, the top facing the outer wall 2011, and the top of the annular partition plate 21) can form a sharp-angled structure. Or, as... Figure 13 As shown, the top of the annular heat collection chamber 2 (i.e., the intersection of the top facing the inner sidewall 2021, the top facing the outer sidewall 2011, and the top of the annular partition plate 21) forms a chamfered structure. The sharp angle or chamfered structure at the top of the annular heat collection chamber 2 reduces the area of ​​collision between the process exhaust gas and the upper surface of the annular heat collection chamber 2, thereby reducing turbulence and minimizing or avoiding adverse effects on the process airflow field near the top of the supporting device 43.

[0095] In some embodiments, such as Figure 14 and Figure 16As shown, the volumes of the outer annular cavity 201 and the inner annular cavity 202 of the annular heat collection chamber 2 can be configured to be unequal.

[0096] For example, the volume of the outer annular cavity 201 can be configured not to exceed the volume of the inner annular cavity 202, that is, the volume of the inner annular cavity 202 is larger, which means that the gas flow rate delivered by the inner annular cavity 202 at one time is larger, and the gas heated by the inner annular cavity 202 has a more obvious effect on the temperature increase of the side wall of the reaction chamber 4.

[0097] As mentioned above, the reaction source gas is heated by the reaction space after being ejected and before reaching the top surface of the support device 43, thereby reaching the process temperature. This process, as well as the growth rate and growth quality, are greatly affected by the temperature field between the top wall of the reaction chamber 4 and the support device 43. By increasing the volume of the inner annular cavity 202, the control effect and flexibility of the temperature at the side wall of the reaction chamber 4 can be improved, and the reasonable gradient of the temperature field between the top wall of the reaction chamber 4 and the support device 43 can be further improved, which is conducive to achieving better film quality.

[0098] In this embodiment, as Figure 14 As shown, the bottom wall thickness of the outer annular cavity 201 can be set to be different from that of the inner annular cavity 202, so that the height of the inner bottom surface of the outer annular cavity 201 is different from that of the inner bottom surface of the inner annular cavity 202. For example, the bottom wall thickness of the outer annular cavity 201 can be greater than that of the inner annular cavity 202, so that the inner bottom surface of the outer annular cavity 201 is higher than that of the inner bottom surface of the inner annular cavity 202, thereby making the volume of the outer annular cavity 201 smaller than the volume of the inner annular cavity 202.

[0099] In this embodiment, as Figure 16 As shown, the bottom end of the top-outer sidewall 2011 and the bottom end of the top-inner sidewall 2021 can be configured to have different heights. For example, the bottom end of the top-outer sidewall 2011 is lower than the bottom end of the top-inner sidewall 2021, so that the volume of the outer annular cavity 201 is smaller than the volume of the inner annular cavity 202.

[0100] In some embodiments, such as Figure 12 As shown, in the axial section of the annular heat collection chamber 2, the guide slopes of the top inner sidewall 2021 and the top outer sidewall 2011 are symmetrical, and the inclination angle of the guide slopes is α, wherein it is preferred to set 45°≤α<90°.

[0101] If the angle α is too small, the top of the annular heat collector 2 tends to be flat, resulting in a larger area where the heat exchanger collides with the process waste gas at the top, which easily generates turbulence. Increasing the angle α increases the length of the guide slope and the heat exchange area of ​​the side walls, making it more effective at utilizing the heat from the process waste gas. Decreasing the angle α reduces the side wall area and the heat exchange area. Within the range of 45° ≤ α < 90°, sufficient heat exchange area is ensured while minimizing turbulence.

[0102] In some embodiments, such as Figure 16 As shown, the exposed surfaces of the top inner sidewall 2021 and the top outer sidewall 2011 are both set as flow guiding slopes, and the bottom end of the top outer sidewall 2011 is at a different height than the bottom end of the top inner sidewall 2021.

[0103] In some embodiments, the heating component of the semiconductor growth apparatus 20 is disposed on one side of the support device 43. The heat generated by the heating component also has a significant heating effect on the inner wall of the annular heat collection chamber 2. Therefore, the inner annular cavity 202 of the annular heat collection chamber 2 may heat up faster under the combined heating of the heating component and the process exhaust gas. In this case, the bottom end of the top-facing outer wall 2011 can be set lower than the bottom end of the top-facing inner wall 2021. That is, the surface area of ​​the guide slope of the top-facing outer wall 2011 is larger than the surface area of ​​the guide slope of the top-facing inner wall 2021, so that the flow resistance of the flow channel on the top-facing outer wall 2011 side is smaller, so that more process exhaust gas is attracted to pass through the flow channel on the top-facing outer wall 2011 side. This makes the heated area of ​​the top-facing outer wall 2011 larger than that of the top-facing inner wall 2021, which can also improve the heating effect. This can balance the heating uniformity of the inner annular cavity 202 and the outer annular cavity 201 of the annular heat collection chamber 2.

[0104] In some embodiments, Figure 16 As shown, the inclination of the top-outer sidewall 2011 is represented by α1, and the extended dashed line at its bottom represents the movement of the auxiliary line on the top surface of the supporting device 43 to that location; similarly, the inclination of the top-inner sidewall 2021 is represented by α2. When α1 = α2, the bottom surface of the top-outer sidewall 2011 is lower than the bottom surface of the top-inner sidewall 2021. It can be seen that the surface area of ​​the top-outer sidewall 2011 increases, and the flow resistance of the process waste gas passage on its side is lower than that on the side where the top-inner sidewall 2021 is located.

[0105] Furthermore, in this embodiment, the inclination angles α1 and α2 of the top outer wall 2011 and the top inner wall 2021 satisfy: 45°≤α1<90°, 45°≤α2<90°. α1 and α2 can be equal or unequal. By configuring the sizes of α1 and α2, the process exhaust gas can exhibit different flow resistance differences in the flow channels on both sides of the top outer wall 2011 and the top inner wall 2021, thereby adjusting the heating uniformity on both sides. With the above configuration of α1 and α2, even if there is a difference in the flow resistance of the process exhaust gas flow channel on the side where the top outer wall 2011 is located compared with that on the side where the top inner wall 2021 is located, it is possible to ensure that strong turbulence that would affect the process gas flow field near the top of the supporting device 43 is avoided.

[0106] In some embodiments, such as Figures 18 to 20 As shown, the reaction chamber 4 has at least one heat insulation layer 45 on its side wall, and the first delivery pipe 33 and the second delivery pipe 34 are embedded in the heat insulation layer 45. The heat insulation layer 45 can be made of graphite hard felt coated with silicon carbide, and is installed on at least the inner side wall of the reaction chamber 4 to keep the chamber warm, and also to keep the first delivery pipe 33 and the second delivery pipe 34 warm.

[0107] The above description is only a partial embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. An adjustable heat recovery device, characterized in that, include: The flow collection structure (1) has an annular flow collection cavity (101), with a flow collection inlet (11) at the top and a flow collection outlet (12) at the bottom, so that gas can enter the flow collection cavity (101) from the flow collection inlet (11) and be discharged through the flow collection outlet (12); An annular heat collection chamber (2) is suspended inside the flow-collecting cavity (101); the inner cavity of the annular heat collection chamber (2) includes an outer annular cavity (201) and an inner annular cavity (202) that are separated from each other; the outer annular cavity (201) surrounds the inner annular cavity (202); The first inlet pipe (31) and the first delivery pipe (33) pass through the manifold cavity (101) and then communicate with the outer annular cavity (201) to realize the first gas delivery; The second inlet pipe (32) and the second delivery pipe (34) pass through the manifold cavity (101) and communicate with the inner annular cavity (202) to realize the second gas delivery.

2. The adjustable heat recovery device according to claim 1, characterized in that, The volume of the outer annular cavity (201) does not exceed the volume of the inner annular cavity (202).

3. The adjustable heat recovery device according to claim 1, characterized in that, The annular heat collection chamber (2) is provided with an annular partition plate (21) extending circumferentially along the collection flow cavity (101) to divide the inner cavity of the annular heat collection chamber (2) into the outer annular cavity (201) and the inner annular cavity (202). The inner annular cavity (202) includes a top-inner sidewall (2021) to form an inner top structure with the annular partition plate (21), and the outer annular cavity (201) includes a top-outer sidewall (2011) to form an outer top structure with the annular partition plate (21). The top of the inner sidewall (2021), the top of the outer sidewall (2011), and the top of the annular partition plate (21) intersect, and the exposed surfaces of the inner sidewall (2021) and the outer sidewall (2011) are both set as inclined flow guide slopes.

4. The adjustable heat recovery device according to claim 3, characterized in that, The outer annular cavity (201) further includes an outer bottom structure that is connected to and communicates with the outer top structure to increase the volume, and / or the inner annular cavity (202) further includes an inner bottom structure that is connected to and communicates with the inner top structure to increase the volume.

5. The adjustable heat recovery device according to claim 3, characterized in that, The total height of the annular heat collection chamber (2) is h, the height of the manifold cavity (101) is H, and the height of the lowest of the top inner sidewall (2021) and the top outer sidewall (2011) is h1; Where h / 2≤h1≤h, and / or H / 2≤h1<H.

6. The adjustable heat recovery device according to claim 3, characterized in that, The acute angles of inclination of the top facing the outer sidewall (2011) and the top facing the inner sidewall (2021) are α1 and α2, respectively, where 45°≤α1<90° and 45°≤α2<90°.

7. The adjustable heat recovery device according to claim 1, characterized in that, An isolation element (22) is arranged radially inside the annular heat collection chamber (2) to break the communication between the annular spaces inside the outer annular cavity (201) and the inner annular cavity (202); The first inlet (A1) of the first inlet pipe (31) on the outer annular cavity (201) and the first delivery pipe (33) are used to connect the first outlet (A2) of the outer annular cavity (201) to the opposite sides of the isolation member (22) and communicate with the interior of the outer annular cavity (201); The second inlet (B1) of the second inlet pipe (32) on the inner annular cavity (202) and the second delivery pipe (34) are used to connect the second outlet (B2) of the inner annular cavity (202) to the opposite sides of the isolation member (22) and communicate with the inner annular cavity (202).

8. The adjustable heat recovery device according to claim 1, characterized in that, The axial cross-sectional outer contour structure of the annular heat collection chamber (2) and the axial cross-sectional outer contour structure of the flow collection structure (1) are both axisymmetric structures. The central axis of the axial cross-sectional outer contour structure of the annular heat collection chamber (2) coincides with the central axis of the axial cross-sectional outer contour structure of the flow collection structure (1).

9. A semiconductor growth apparatus, characterized in that, It includes a reaction chamber (4), a casing structure (5), and an adjustable heat recovery device as described in any one of claims 1 to 8, wherein an annular heat collection chamber (2) is suspended inside the adjustable heat recovery device and a flow collection outlet (12) is provided at the bottom; The reaction chamber (4) is provided with a gas injection device (41) at the top, a tail gas discharge port (42) at the bottom, and a support device (43) inside. The support top surface of the support device (43) is arranged opposite to the gas injection device (41). The cover structure (5) is disposed on the inner wall of the reaction chamber (4) and surrounds the support device (43), and a reserved cavity (51) is formed between it and the inner wall of the reaction chamber (4); The adjustable heat recovery device is arranged around the area where the support device (43) is located, and is located between the area where the cover structure (5) and the support device (43) are located. The top surface of the adjustable heat recovery device is lower than the support top surface of the support device (43). The collection outlet (12) is connected to the exhaust gas outlet (42). The first inlet pipe (31) and the second inlet pipe (32) of the annular heat collection chamber (2) extend to the outside of the reaction chamber (4); The first delivery pipe (33) of the annular heat collection chamber (2) connects the outer annular cavity (201) and the gas injection device (41), and extends within the cavity wall of the reaction chamber (4), so that the hot gas in the outer annular cavity (201) mixes with the gas in the gas injection device (41) to increase the gas temperature. The second delivery pipe (34) of the annular heat collection chamber (2) connects the inner annular cavity (202) and the reserved cavity (51), and extends within the cavity wall of the reaction chamber (4) to deliver the hot gas from the inner annular cavity (202) to the reserved cavity (51) to increase the temperature of the inner wall of the reaction chamber (4).

10. The semiconductor growth apparatus according to claim 9, characterized in that, The top surface of the adjustable heat recovery device is lower than the bottom surface of the support device (43).

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