A microstrip coupler
Patent Information
- Application Number
- CN202521871869.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-29
- Publication Date
- 2026-08-28
- Estimated Expiration
- 2035-08-29
AI Technical Summary
一方面,为满足通信设备小型化需求,减小微带耦合器尺寸的同时,难以保证其在宽频带内的稳定性能;另一方面,现有耦合器在耦合度调节上灵活性欠佳,无法精准适配不同通信场景,且功率容量有限,在高功率信号传输时易出现信号失真等问题,这些都限制了其在新型通信系统中的广泛应用
通过特殊的微带线弯折设计和多层复合结构优化,减小了耦合器的尺寸,提高了宽频带工作的稳定性,提高了对复杂场景的适应能力。
Smart Images

Figure CN224696939U_ABST
Abstract
Claims
1. A microstrip coupler, characterized in that, include: The coupling line is connected sequentially to the top microstrip line layer, the middle multi-layer dielectric layer, and the bottom ground layer; The top microstrip line layer includes multiple bends, each of which is configured with a curve shape corresponding to the frequency band and coupling degree. The intermediate multilayer dielectric layer comprises multiple dielectric layers composed of materials with different dielectric constants and thicknesses; The bottom ground layer has multiple vias for connecting heat dissipation devices; The coupling line is disposed on the top microstrip line layer, and the coupling line includes multiple microstrip line segments of different lengths and widths.
2. The microstrip coupler according to claim 1, characterized in that, The top microstrip layer comprises microstrip lines made of a silver alloy material.
3. The microstrip coupler according to claim 1, characterized in that, The microstrip segments of the coupling line are connected by a transition structure.
4. The microstrip coupler according to claim 1, characterized in that, The intermediate multilayer dielectric layer includes multiple dielectric layers, and the material of each dielectric layer includes one or more of polytetrafluoroethylene and ceramic composite materials.
5. The microstrip coupler according to claim 1, characterized in that, The bottom grounding layer is made of copper alloy material, and the thickness of the bottom grounding layer is between 0.4 mm and 0.5 mm. The diameter of the vias on the bottom ground layer is 0.35 mm to 0.45 mm.
6. The microstrip coupler according to claim 1, characterized in that, It also includes impedance matching networks; The impedance matching network is set at the input port, output port, and designated signal transmission node of the microstrip coupler.
7. The microstrip coupler according to claim 6, characterized in that, The impedance matching network includes multiple inductors and multiple capacitors, which together form an LC resonant circuit.
8. The microstrip coupler according to claim 1, characterized in that, It also includes adjustable capacitor-inductor arrays; The adjustable capacitor-inductor array is disposed in a designated area of the microstrip line segment.
9. The microstrip coupler according to claim 1, characterized in that, It also includes a microprocessor and a digital-to-analog converter circuit; The microprocessor outputs a control voltage through the digital-to-analog converter circuit based on a preset coupling value or real-time monitored signal parameters.
10. The microstrip coupler according to claim 1, characterized in that, It also includes thermal fins and thermal conductive channels, which are disposed in the housing of the microstrip coupler.