A kind of bar stacking and degumming tool structure and photovoltaic cell production device

Abstract

The application is suitable for the technical field of photovoltaic manufacturing devices, and particularly relates to a stacked rod degumming tool structure and a photovoltaic cell production device. The stacked rod degumming tool structure comprises a bearing seat, a pipeline installed on the bearing seat, and a plurality of nozzles installed on the pipeline. The bearing seat is provided with a placing position for placing a plurality of silicon wafer groups. Each silicon wafer group comprises at least two silicon wafers stacked and bonded by stick gum between adjacent silicon wafers. The nozzles are used for spraying a degumming solution to the silicon wafer groups to dissolve the stick gum. By arranging the pipeline and the plurality of nozzles on the bearing seat, when the silicon wafer groups are placed on the bearing seat, the bearing seat and the silicon wafer groups can be soaked in the degumming solution for degumming. At the same time, the nozzles spray the degumming solution to the silicon wafer groups, so that the degumming solution can penetrate into the middle of the silicon wafers, thereby further accelerating the dissolution of the stick gum and achieving the purpose of rapid degumming.

Description

Technical Field

[0001] This application belongs to the field of photovoltaic manufacturing equipment technology, and in particular relates to a stacked rod debinding tooling structure and a photovoltaic cell production device. Background Technology

[0002] Photovoltaic silicon wafers are an important material for manufacturing crystalline silicon photovoltaic cells. Photovoltaic silicon wafers are made by slicing stacked silicon rods, which are formed by laminating and bonding at least two silicon rods together.

[0003] After silicon rods are sliced ​​to obtain silicon wafers, they need to be cleaned and debonded. Existing silicon wafer debonding fixtures use a slicing workpiece plate to hold the undebonded silicon wafers, and then immerse them together in a debonding device to achieve the purpose of debonding the silicon wafers. However, during the immersion process, the debonding solution has difficulty penetrating into the middle of the silicon wafers, making it difficult to remove the sticking adhesive between adjacent silicon wafers. Utility Model Content

[0004] This application provides a stacked rod debonding fixture structure, which aims to solve the problem of difficult debonding of silicon wafers after stacked rod slicing.

[0005] This application provides a stacked rod degumming fixture structure, comprising:

[0006] Support;

[0007] Piping installed on the support; and

[0008] Several nozzles installed on the pipeline;

[0009] The carrier is provided with a placement position for placing several silicon wafer groups. Each silicon wafer group includes at least two silicon wafers stacked together, and adjacent silicon wafers are bonded together by adhesive sticks.

[0010] The nozzle is used to spray a descaling solution onto the silicon wafer assembly to dissolve the adhesive sticks.

[0011] Furthermore, it also includes a slicing workpiece plate, which is used to support at least two stacked silicon rods. The slicing workpiece plate is bonded to the silicon rods and to adjacent silicon rods by stick adhesive. The silicon wafer assembly is formed by cutting the stacked rods and is placed on the placement position by the slicing workpiece plate.

[0012] Furthermore, the nozzles are distributed on both sides of the placement position, and the nozzles spray the descaling solution in the direction of the silicon wafer assembly.

[0013] Furthermore, the nozzle is aligned with the position of the adhesive stick.

[0014] Furthermore, it also includes an immersion tank containing a desizing solution, and a support can be placed in the immersion tank to immerse the silicon wafer assembly in the desizing solution.

[0015] Furthermore, it also includes a solid-liquid separation unit, which is connected to the soaking tank and pipelines, and is used to separate the adhesive solution in the soaking tank into solid and liquid components before supplying it to the pipelines.

[0016] Furthermore, the temperature of the descaling solution is 55°C to 65°C.

[0017] Furthermore, the pressure of the degumming liquid sprayed from the nozzle is 0.25 MPa to 0.35 MPa.

[0018] Furthermore, along the length of the pipeline, the width of the nozzle gradually increases from the pipeline towards the silicon wafer assembly.

[0019] Secondly, this application also provides a photovoltaic cell production apparatus, including the stacked rod debinding tooling structure as described above.

[0020] The beneficial effects of this application are as follows: The stacked silicon wafer debonding fixture structure provided by this application includes a support base; pipes installed on the support base; and several nozzles installed on the pipes. The support base has placement positions for placing several silicon wafer groups, each silicon wafer group including at least two stacked silicon wafers bonded together by adhesive. The nozzles are used to spray debonding liquid onto the silicon wafer groups to dissolve the adhesive. By providing pipes and several nozzles on the support base, when the silicon wafer groups are placed on the support base, the support base and the silicon wafer groups can be immersed in the debonding liquid for debonding. Simultaneously, the debonding liquid is sprayed onto the silicon wafer groups through the nozzles, allowing the debonding liquid to penetrate deep into the middle of the silicon wafers, thereby further accelerating the dissolution of the adhesive and achieving rapid debonding. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of one embodiment of the stacked bar degumming fixture structure provided in this application;

[0022] Figure 2 This is a top view schematic diagram of an embodiment of the stacked bar degumming fixture structure provided in this application.

[0023] Figure 3 It is along Figure 2 Schematic diagram of the cross section along line AA;

[0024] Figure 4 This is a schematic diagram of the nozzle and silicon wafer structure of one embodiment of the stacked rod debonding tooling structure provided in this application;

[0025] Figure 5 yes Figure 4 An enlarged schematic diagram of part A1 in the middle;

[0026] Figure 6 This is a front view schematic diagram of the nozzle and silicon wafer of one embodiment of the stacked rod debonding tooling structure provided in this application;

[0027] Figure 7This is a schematic diagram of the nozzle structure of one embodiment of the stacked bar degumming fixture structure provided in this application;

[0028] Figure 8 It is along Figure 7 Schematic diagram of the cross section of the BB line.

[0029] Explanation of reference numerals in the attached figures:

[0030] 100-Bearing base, 200-Pipeline, 300-Nozzle, 400-Silicon wafer assembly, 410-Silicon wafer, 500-Glue stick, 600-Sliced ​​workpiece plate. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. Examples of embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. Furthermore, it should be understood that the specific embodiments described herein are merely for explaining this application and are not intended to limit this application.

[0032] In the description of this application, it should be understood that the terms "length", "width", "upper", "lower", "left", "right", "horizontal", "top", "bottom", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0033] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, features defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0034] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication between two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0035] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0036] The following disclosure provides numerous different embodiments or examples for implementing various structures of this application. To simplify the disclosure, specific examples of components and arrangements are described below. These are merely examples and are not intended to limit the scope of this application. Furthermore, reference values ​​and / or reference letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, various specific examples of processes and materials are provided in this application, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0037] The stacked silicon wafer debonding fixture structure provided in this application includes a support base; pipes installed on the support base; and several nozzles installed on the pipes. The support base has placement positions for placing several silicon wafer groups, each silicon wafer group comprising at least two stacked silicon wafers bonded together by adhesive. The nozzles are used to spray debonding liquid onto the silicon wafer groups to dissolve the adhesive. By providing pipes and nozzles on the support base, when the silicon wafer groups are placed on the support base, the support base and the silicon wafer groups can be immersed in the debonding liquid for debonding. Simultaneously, the debonding liquid is sprayed onto the silicon wafer groups through the nozzles, allowing the debonding liquid to penetrate deep into the middle of the silicon wafers, thereby further accelerating the dissolution of the adhesive and achieving rapid debonding.

[0038] like Figures 1 to 5 As shown in the figure, this application provides a stacked rod degumming fixture structure, including:

[0039] Support 100;

[0040] Pipeline 200 installed on support 100; and

[0041] Several nozzles 300 are installed on the pipeline 200;

[0042] The carrier 100 is provided with a placement position for placing a plurality of silicon wafer groups 400. Each silicon wafer group 400 includes at least two silicon wafers 410 stacked together, and adjacent silicon wafers 410 are bonded together by adhesive stick 500.

[0043] Nozzle 300 is used to spray adhesive remover (not shown) onto silicon wafer assembly 400 to dissolve adhesive stick 500.

[0044] In practice, the silicon wafer assembly 400 is made by slicing stacked rods, wherein the stacked rods include at least two stacked silicon rods. Silicon rods refer to silicon single crystal rods, which are the core raw materials for manufacturing high-tech products such as integrated circuits and solar cells.

[0045] Since adjacent silicon rods are bonded together by adhesive rod 500, after the stacked rods are sliced, several silicon wafer groups 400 are obtained. Each silicon wafer group 400 includes at least two silicon wafers 410, which are connected in sequence, and adjacent silicon wafers 410 are bonded together by adhesive rod 500.

[0046] Several silicon wafer assemblies 400 after slicing are placed on the support 100. Typically, the debonding fixture has a debonding basket, so the support 100 can be regarded as the debonding basket. In the process of debonding the silicon wafers 410, the support 100 and the silicon wafer assemblies 400 can be immersed together in the debonding solution for debonding.

[0047] In some embodiments, an immersion tank (not shown) is also included, which contains a desizing solution. The carrier 100 can be placed in the immersion tank so that the silicon wafer assembly 400 is immersed in the desizing solution and desizing is performed by immersion.

[0048] As one possible implementation, a slicing workpiece plate 600 is also included. The slicing workpiece plate 600 is used to support at least two stacked silicon rods. Adjacent silicon rods are bonded together by stick adhesive 500. The slicing workpiece plate 600 is bonded to a silicon rod by stick adhesive 500. The silicon wafer group 400 is formed by cutting the stacked rods. That is, several silicon wafer groups 400 are bonded to the slicing workpiece plate 600. Several silicon wafer groups 400 can be placed on the carrier 100 at one time by driving the slicing workpiece plate 600.

[0049] Optionally, the adhesive remover refers to the liquid used to dissolve the adhesive stick 500. The adhesive remover can be water or a specified solvent, as long as it can dissolve the adhesive stick 500, and there is no limitation.

[0050] Optionally, when water is used as the descaling solution, room temperature water can be used. However, to improve the descaling efficiency, hot water at 55°C to 65°C can also be used, such as hot water at any temperature value between 56°C, 58°C, 59°C, 60°C, 61°C, 62°C, 63°C, 64°C, or 55°C to 65°C, without limitation.

[0051] Nozzle 300 is connected to conduit 200 to spray adhesive remover into silicon wafer assembly 400. The sprayed adhesive remover can penetrate into the silicon wafers 410 to dissolve adhesive stick 500.

[0052] During implementation, the pressure of the adhesive-removing liquid sprayed by nozzle 300 is between 0.25 MPa and 0.35 MPa. For example, the pressure of the adhesive-removing liquid sprayed by nozzle 300 is any pressure value among 0.25 MPa, 0.26 MPa, 0.27 MPa, 0.28 MPa, 0.29 MPa, 0.3 MPa, 0.31 MPa, 0.32 MPa, 0.33 MPa, 0.34 MPa, or between 0.25 MPa and 0.35 MPa, without limitation.

[0053] The stacked rod debonding fixture structure provided in this application includes a support base 100; a pipe 200 installed on the support base 100; and a plurality of nozzles 300 installed on the pipe 200. The support base 100 has a placement position for placing a plurality of silicon wafer groups 400. Each silicon wafer group 400 includes at least two stacked silicon wafers 410, with adjacent silicon wafers 410 bonded together by adhesive rod 500. The nozzles 300 are used to spray debonding liquid onto the silicon wafer groups 400 to dissolve the adhesive rod 500. By providing the pipe 200 and the plurality of nozzles 300 on the support base 100, when the silicon wafer groups 400 are placed on the support base 100, the support base 100 and the silicon wafer groups 400 can be immersed in the debonding liquid for debonding. At the same time, the debonding liquid is sprayed onto the silicon wafer groups 400 through the nozzles 300, allowing the debonding liquid to penetrate deep into the middle of the silicon wafers 410, thereby further accelerating the dissolution of the adhesive rod 500 and achieving the purpose of rapid debonding.

[0054] In some embodiments, nozzles 300 are distributed on both sides of the placement position, and the nozzles 300 spray the desorbent solution towards the silicon wafer assembly 400. By simultaneously spraying the desorbent solution into the silicon wafer assembly 400 from both sides of the nozzles 300, the desorbent solution can penetrate into the middle of the silicon wafer 410 more quickly, further improving the desorbent removal efficiency.

[0055] Optionally, aligning the nozzle 300 with the adhesive stick 500 allows the degumming solution to better contact the adhesive stick 500, thereby improving the degumming efficiency.

[0056] It should be noted that the alignment of the nozzle 300 and the adhesive stick 500 means that the nozzle 300 and the adhesive stick 500 are substantially on the same plane. For example, taking a horizontal plane as the reference plane, the height of the nozzle 300 and the height of the adhesive stick 500 can be designed to differ by 0.5 to 1 mm. For example, the height difference between the nozzle 300 and the adhesive stick 500 can be any value from 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, or 0.5 mm to 1 mm, without limitation.

[0057] In some embodiments, a solid-liquid separation unit (not shown) is also included. The solid-liquid separation unit is connected to the soaking tank and the pipeline 200 and is used to perform solid-liquid separation on the descaling solution in the soaking tank and then supply it to the pipeline 200 for use.

[0058] In implementation, the support 100 is used to support the slicing workpiece plate 600 and the silicon wafer assembly 400. The support 100 can be immersed in an immersion tank, allowing the silicon wafer assembly 400 to be immersed in the resist solution within the immersion tank. Since the silicon wafer assembly 400 is made by slicing stacked rods, some silicon wafer debris will fall into the resist solution in the immersion tank. The solid-liquid separation unit can separate the resist solution in the immersion tank and transport the separated resist solution to the pipeline 200. Then, the resist solution is sprayed from the nozzle 300 onto the silicon wafer assembly 400, allowing the resist solution to be recycled, saving costs and improving production efficiency.

[0059] Optionally, along the length of the conduit 200, the width of the nozzle 300 gradually increases from the conduit 200 to the silicon wafer assembly 400.

[0060] For ease of understanding, the extension direction of line segment L represents the length direction of pipe 200. By designing the width of nozzle 300 to gradually increase from pipe 200 to silicon wafer 400, the descaling liquid sprayed by nozzle 300 forms a fan shape that gradually increases from nozzle 300 to silicon wafer 400. This ensures that the descaling liquid sprayed by adjacent nozzles 300 at least partially overlaps, avoiding any leakage and ensuring the descaling effect.

[0061] Secondly, this application also provides a photovoltaic cell production apparatus, including the stacked rod debinding tooling structure as described above.

[0062] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the structure and implementation principle of the photovoltaic cell production device described above can be referred to the corresponding structure and implementation principle in the foregoing embodiments, and will not be repeated here.

[0063] The stacked rod debonding fixture structure provided in this application includes a support base 100; a pipe 200 installed on the support base 100; and a plurality of nozzles 300 installed on the pipe 200. The support base 100 has a placement position for placing a plurality of silicon wafer groups 400. Each silicon wafer group 400 includes at least two stacked silicon wafers 410, with adjacent silicon wafers 410 bonded together by adhesive rod 500. The nozzles 300 are used to spray debonding liquid onto the silicon wafer groups 400 to dissolve the adhesive rod 500. By providing the pipe 200 and the plurality of nozzles 300 on the support base 100, when the silicon wafer groups 400 are placed on the support base 100, the support base 100 and the silicon wafer groups 400 can be immersed in the debonding liquid for debonding. At the same time, the debonding liquid is sprayed onto the silicon wafer groups 400 through the nozzles 300, allowing the debonding liquid to penetrate deep into the middle of the silicon wafers 410, thereby further accelerating the dissolution of the adhesive rod 500 and achieving the purpose of rapid debonding.

[0064] The above are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

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