Wafer etching device

Abstract

The application provides a wafer etching device, and relates to the technical field of wafer etching, which comprises a shell with a cavity, a bearing frame, a driver and a gas delivery pipe in the cavity, the bearing frame is fixedly arranged in the cavity and used for bearing a wafer, the gas delivery pipe is arranged beside the bearing frame and rotatably arranged in the cavity, the driver is drivingly connected with the gas delivery pipe and used for driving the gas delivery pipe to rotate around the outer periphery of the bearing frame, and a nozzle in communication with the gas delivery pipe is arranged on the side of the gas delivery pipe facing the bearing frame. By rotating the gas delivery pipe around the outer periphery of the bearing frame bearing the wafer, the etching gas sprayed by the nozzle can enter the bearing frame from all around the bearing frame, so as to accelerate the flow of the etching gas, make the etching gas diffuse to different areas at a faster speed, reduce the gas concentration gradient, make the concentration of the etching gas tend to be uniform, and thus the uniformity of wafer etching is improved.

Description

Technical Field

[0001] This application relates to the field of wafer etching technology, and more specifically, to a wafer etching apparatus. Background Technology

[0002] Vapor phase etching (VPE) is a dry process that selectively removes material by reacting gaseous reactants with the material surface through chemical reaction or physical bombardment. Its core characteristic is the use of gas-solid phase reactions to generate volatile products, which are then removed via a vacuum system to achieve high-precision etching. In the VPE industry, a derivative technique called Vapor HF chemical release etching has emerged. In this technique, vaporized HF (hydrogen fluoride) is introduced into the reaction chamber from one side wall, reacts fully with the wafer to be etched, and then is exhausted from the other side of the reaction chamber through an extraction port.

[0003] Currently, such as Figure 1 As shown, the nozzle for discharging etching gas is fixedly installed on one side of the wafer chemical release etching apparatus cavity. When the etching gas is discharged, as... Figure 1 As shown by the middle arrow, the gas needs to diffuse from the position of the wafer near the nozzle to the position away from the nozzle. The gas concentration is high near the nozzle, and the etching rate of the wafer is fast; the gas concentration is low far from the nozzle, and the etching rate of the wafer is slow, which affects the uniformity of wafer etching. Utility Model Content

[0004] The purpose of this application is to provide a wafer etching apparatus to address the shortcomings of the prior art and solve the aforementioned problems.

[0005] To achieve the above objectives, the technical solutions adopted in the embodiments of this application are as follows: In one aspect of this application, a wafer etching apparatus is provided, including a housing having a chamber and a support frame, a driver, and a gas supply pipe located within the chamber. The support frame is fixedly disposed within the chamber and is used to support a wafer. The gas supply pipe is located beside the support frame and is rotatably disposed within the chamber. The driver is drivenly connected to the gas supply pipe and is used to drive the gas supply pipe to rotate around the outer periphery of the support frame. A nozzle communicating with the gas supply pipe is provided on the side of the gas supply pipe facing the support frame.

[0006] Optionally, the wafer etching apparatus includes a gas source located outside the chamber, the gas source being connected to a gas supply pipe via an inlet pipe, and the gas source and the inlet pipe being connected via a rotary joint, the rotary joint being located at the rotation center line of the gas supply pipe.

[0007] Optionally, a circular slide rail is provided in the chamber, the circular slide rail surrounds the outer periphery of the support frame, and the gas supply pipe is slidably connected to the circular slide rail.

[0008] Optionally, there are multiple gas supply pipes, which are interconnected and arranged along the outer periphery of the support frame.

[0009] Optionally, the wafer etching apparatus also includes multiple exhaust ports disposed in the housing, each of which is connected to a chamber.

[0010] Optionally, the wafer etching apparatus also includes exhaust pipes located outside the housing and connected to multiple exhaust ports. Optionally, multiple nozzles are provided on the gas pipeline, and the multiple nozzles are arranged linearly along the axial direction of the gas pipeline.

[0011] Optionally, the support frame is provided with multiple layers of wafers, with each layer of wafers corresponding to at least one nozzle.

[0012] Optionally, the nozzle is funnel-shaped.

[0013] Optionally, the rotary joint is a two-way rotary joint.

[0014] Optionally, the wafer etching apparatus is a wafer chemical release etching apparatus.

[0015] The beneficial effects of this application include: This application provides a wafer etching apparatus, including a housing with a chamber, a support frame, a driver, and a gas supply pipe located within the chamber. The support frame is fixedly disposed within the chamber and is used to support a wafer. The driver drives the gas supply pipe to rotate around the outer periphery of the support frame. Nozzles disposed on the gas supply pipe eject etching gas onto the wafer on the support frame. By rotating the gas supply pipe around the outer periphery of the support frame supporting the wafer, the etching gas ejected from the nozzles enters the support frame from all sides, thereby accelerating the flow of the etching gas and allowing it to diffuse to different areas at a faster speed. This reduces the gas concentration gradient, making the concentration of the etching gas more uniform, and thus improving the uniformity of wafer etching. Attached Figure Description

[0016] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram showing the positions of the nozzle and the wafer in the prior art; Figure 2 This is one of the structural schematic diagrams of a wafer etching apparatus provided in an embodiment of this application; Figure 3 This is a schematic diagram of the diffusion structure of some etching gases provided in an embodiment of this application; Figure 4This is a schematic diagram of the structure of two gas pipelines provided in an embodiment of this application; Figure 5 This is a second schematic diagram of a wafer etching apparatus provided in an embodiment of this application; Figure 6 One of the schematic diagrams of the gas pipeline and circular slide rail provided in the embodiments of this application; Figure 7 This is the second schematic diagram of the specific structure of the gas pipeline and circular slide rail provided in the embodiments of this application.

[0018] Icons: 100-Wafer etching apparatus; 110-Housing; 111-Cavity; 112-Exhaust port; 120-Support frame; 130-Driver; 140-Gas supply pipe; 141-Nozzle; 150-Gas source; 160-Inlet pipe; 170-Rotary joint; 171-Fixing part; 172-Rotating part; 180-Circular slide rail; 190-Exhaust pipe; 200-Wafer. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0020] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. It should be noted that, unless otherwise specified, the various features in the embodiments of this application can be combined with each other, and the combined embodiments are still within the protection scope of this application.

[0021] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0022] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this application is in use. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In addition, the terms "first," "second," and "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0023] Furthermore, terms such as "horizontal" and "vertical" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0024] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0025] One aspect of the embodiments of this application, such as Figure 2 As shown, a wafer etching apparatus 100 is provided, including a housing 110 having a chamber 111, a support frame 120, a driver 130, and a gas supply pipe 140 located within the chamber 111. The support frame 120 is fixedly disposed within the chamber 111 and is used to support a wafer 200. The gas supply pipe 140 is located beside the support frame 120 and is rotatably disposed within the chamber 111. The driver 130 is drivenly connected to the gas supply pipe 140 and is used to drive the gas supply pipe 140 to rotate around the outer periphery of the support frame 120. A nozzle 141 communicating with the gas supply pipe 140 is provided on the side of the gas supply pipe 140 facing the support frame 120.

[0026] Specifically, the wafer etching apparatus 100 includes a housing 110 with a chamber 111. A support frame 120, a driver 130, and a gas supply pipe 140 are disposed within the chamber 111. The support frame 120 is fixedly disposed within the chamber 111, and it should be noted that the support frame 120 is located at or near the center of the chamber 111. The support frame 120 is used to support the wafer 200. The gas supply pipe 140 is disposed beside the support frame 120, and there is a gap between the gas supply pipe 140 and the support frame 120. Simultaneously, the gas supply pipe 140 is rotatably disposed within the chamber 111. It should be noted that the gas supply pipe 140 can be a vertical pipe extending along the height direction of the support frame 120. The gas supply pipe 140 is driven by the driver 130, causing the gas supply pipe 140 to rotate around the outer periphery of the support frame 120. It should be noted that the gas supply pipe 140 rotates around the central axis of the support frame 120 without interfering with the support frame 120 during rotation. A nozzle 141 is connected to the gas supply pipe 140 and faces the support frame 120. The nozzle 141 is used to spray the etching gas in the gas supply pipe 140 onto the wafer 200 on the support frame 120 through the nozzle 141.

[0027] When etching wafer 200 is required, wafer 200 is placed on carrier 120, etching gas is introduced into gas supply pipe 140, and simultaneously, driver 130 drives gas supply pipe 140 to rotate around the central axis of carrier 120. Figure 3 As indicated by the middle arrow, etching gas is injected into the wafer 200 through nozzle 141, which is connected to the gas supply pipe 140. As the gas supply pipe 140 rotates around the outer periphery of the support frame 120 carrying the wafer 200, the etching gas ejected from nozzle 141 enters the support frame 120 from all sides, thereby accelerating the flow of the etching gas. This allows the etching gas to diffuse to different areas at a faster speed, reducing the gas concentration gradient and making the concentration of the etching gas more uniform, thus improving the uniformity of the etching of the wafer 200.

[0028] In some embodiments, the direction of rotation of the gas pipe 140 around the support frame 120 can be either clockwise or counterclockwise, and there is no specific limitation.

[0029] In some embodiments, the etching gas can be HF (hydrogen fluoride), CF4 (carbon tetrafluoride), or HBr (hydrogen bromide), etc., and is not limited here.

[0030] In some embodiments, N2 (nitrogen gas) also needs to be introduced into the chamber 111 to dilute the etching gas and improve the uniformity of etching the wafer 200.

[0031] Optionally, such as Figure 2As shown, the wafer etching apparatus 100 includes an air source 150 located outside the chamber 111. The air source 150 is connected to the air supply pipe 140 via an air inlet pipe 160, and the air source 150 and the air inlet pipe 160 are connected via a rotary joint 170, which is located on the rotation center line of the air supply pipe 140.

[0032] Specifically, etching gas is supplied to the gas supply pipe 140 in a pressurized form by a gas source 150 outside the chamber 111. The gas source 150 is connected to the gas supply pipe 140 through an inlet pipe 160, and the gas source 150 is connected to the inlet pipe 160 through a rotary joint 170. It should be noted that the gas source 150 is fixedly connected to the fixing part 171 on the rotary joint 170, and the inlet pipe 160 is fixedly connected to the rotating part 172 on the rotary joint 170. The rotary joint 170 is located at the rotation center when the gas supply pipe 140 rotates around the support frame 120.

[0033] When wafer 200 etching is required, etching gas flows out from gas source 150, enters inlet pipe 160 through rotary joint 170, then flows to gas supply pipe 140, and finally is ejected through nozzle 141. When gas supply pipe 140 rotates around the outer periphery of support frame 120, the rotating part 172 of gas supply pipe 140, inlet pipe 160, and rotary joint 170 rotates around the fixed part 171 of rotary joint 170. It should be noted that the rotation process does not affect the flow process of etching gas.

[0034] In some embodiments, the gas source 150 may be located at the top or bottom of the housing 110, and there is no specific limitation.

[0035] In some embodiments, the air intake pipe 160 and the air supply pipe 140 can be fixed by integral molding or welding, etc., which is not limited here.

[0036] Optionally, such as Figure 2 As shown, a circular slide rail 180 is provided in the chamber 111. The circular slide rail 180 surrounds the outer periphery of the support frame 120, and the air supply pipe 140 is slidably connected to the circular slide rail 180.

[0037] Specifically, the circular slide rail 180 is fixedly installed inside the chamber 111 and surrounds the outer periphery of the support frame 120. The air supply pipe 140 is slidably connected to the circular slide rail 180. In this way, the circular slide rail 180 can provide guidance for the movement of the air supply pipe 140, improving the controllability and stability of the air supply pipe 140 during rotation. That is to say, the actuator 130 drives the air supply pipe 140 to slide on the circular slide rail 180, that is, to rotate around the outer periphery of the support frame 120.

[0038] In some implementations, such as Figure 6As shown, a protrusion can be provided on the gas supply pipe 140 and a groove can be provided on the circular slide rail 180. Through the sliding cooperation between the protrusion and the groove, the gas supply pipe 140 can slide on the circular slide rail 180.

[0039] In some implementations, such as Figure 7 As shown, a groove can be provided on the gas supply pipe 140 and a protrusion can be provided on the circular slide rail 180. Through the sliding cooperation between the groove and the protrusion, the gas supply pipe 140 can slide on the circular slide rail 180.

[0040] Optionally, such as Figure 4 As shown, there are multiple gas supply pipes 140, which are interconnected and arranged along the outer periphery of the support frame 120.

[0041] Specifically, multiple gas supply pipes 140 can be provided, and the gas supply pipes 140 are connected to each other through connecting pipes or inlet pipes 160. It should be noted that "multiple gas supply pipes 140" refers to two or more. The multiple gas supply pipes 140 are arranged along the outer periphery of the support frame 120, and each gas supply pipe 140 rotates around the outer periphery of the support frame 120. It should be noted that each gas supply pipe 140 will not interfere with the support frame 120 during rotation. The multiple gas supply pipes 140 accelerate the emission rate of etching gas, increasing the etching rate of the wafer 200. Simultaneously, the flow of a large amount of etching gas accelerates the gas exchange rate, making the concentration of etching gas more uniform, thereby improving the uniformity of wafer 200 etching.

[0042] Optionally, such as Figure 2 As shown, the wafer etching apparatus 100 also includes a plurality of exhaust ports 112 disposed in the housing 110, and the plurality of exhaust ports 112 are respectively connected to the chamber 111.

[0043] Specifically, a plurality of vents 112 are provided on the housing 110. The vents 112 can be linearly arranged on the side wall of the housing 110. It should be noted that linear arrangement means uniform spacing along a straight line or arc. In this application, the vents 112 can be uniformly spaced along the side wall of the housing 110. The plurality of vents 112 connect the interior of the chamber 111 with the exterior of the chamber 111. They are used to discharge the etched products to the exterior of the chamber 111 through the vents 112. The arrangement of the plurality of vents 112 accelerates the discharge rate of the etched products to the exterior of the chamber 111 and reduces the impact of soluble or volatile etched products on the etching rate of the wafer 200.

[0044] In some embodiments, the exhaust port 112 may be provided in multiple layers along the side wall of the chamber 111 to facilitate the rapid discharge of volatile products formed by etching from the interior of the chamber 111.

[0045] Optionally, such as Figure 2 As shown, the wafer etching apparatus 100 also includes an exhaust pipe 190 located outside the housing 110 and connected to a plurality of exhaust ports 112.

[0046] Specifically, multiple exhaust pipes 190 connected to multiple exhaust ports 112 are provided on the outside of the housing 110. Each exhaust port 112 corresponds to each exhaust pipe 190. The exhaust pipes 190 can guide the etched products to be discharged in a specific direction. For example, the outlets of multiple exhaust pipes 190 can be set in the same container to facilitate the unified processing of the etched products. Optionally, such as Figure 2 As shown, a plurality of nozzles 141 are provided on the gas transmission pipe 140, and the plurality of nozzles 141 are arranged linearly along the axial direction of the gas transmission pipe 140.

[0047] Specifically, multiple nozzles 141 are provided on the side of the gas supply pipe 140 facing the support frame 120. These nozzles 141 are connected to the gas supply pipe 140 and used to spray etching gas. It should be noted that "multiple" refers to two or more nozzles. The multiple nozzles 141 extend in the same direction from the gas supply pipe 140 towards the support frame 120, and are arranged linearly along the axial direction of the gas supply pipe 140; that is, multiple nozzles 141 are evenly spaced along the pipe direction of the gas supply pipe 140. The arrangement of multiple nozzles 141 increases the discharge rate of the etching gas from the gas supply pipe 140 to the support frame 120, further accelerating the etching rate of the wafer 200.

[0048] Optionally, such as Figure 2 As shown, a multilayer wafer 200 is disposed on the support frame 120, and each layer of wafer 200 is disposed corresponding to at least one nozzle 141.

[0049] Specifically, the carrier 120 has a multi-layer structure, and the wafers 200 can be placed on each layer of the carrier 120. At least one nozzle 141 is set corresponding to one layer of wafers 200. That is, two or more nozzles 141 can be set corresponding to one layer of wafers 200. When the etching gas is ejected from the nozzle 141, the gas can be sprayed onto the surface of the wafer 200, allowing the etching gas to diffuse to different areas at a relatively fast speed, thereby reducing the gas concentration gradient and making the concentration of the etching gas more uniform, thus improving the uniformity of the etching of the wafer 200.

[0050] Optionally, such as Figure 2 As shown, nozzle 141 is trumpet-shaped.

[0051] Specifically, the nozzle 141 is configured as a trumpet shape, which can diffuse the etching gas. At the same time, the nozzle 141 rotates around the outer periphery of the support frame 120 that carries the wafer 200, so that the etching gas can quickly and evenly contact the wafer 200, thereby alleviating the etching difference between the edge and center of the wafer 200.

[0052] Optionally, such as Figure 5 As shown, rotary joint 170 is a two-way rotary joint 170.

[0053] Optionally, the wafer etching apparatus 100 is a wafer chemical release etching apparatus.

[0054] Specifically, the gas source 150 is fixedly connected to the fixing part 171 of the two-way rotary joint 170, and two air inlet pipes 160 are fixedly connected to the rotating part 172 of the two-way rotary joint 170 at different positions. The two air inlet pipes 160 are connected to the two air delivery pipes 140. The rotary joint 170 is located at the center of rotation when the two air delivery pipes 140 rotate around the support frame 120. It should be noted that both air delivery pipes 140 simultaneously rotate around the outer periphery of the support frame 120 with the fixing part 171 of the rotary joint 170 as the center of rotation. The multiple air delivery pipes 140 accelerate the emission rate of the etching gas, thereby increasing the etching rate of the wafer 200. Multiple gas supply pipes 140 rotate around the outer periphery of the support frame 120 that carries the wafer 200. The etching gas ejected from multiple nozzles 141 enters the support frame 120 from all sides, thereby accelerating the flow of the etching gas and enabling the etching gas to diffuse to different areas at a faster speed. This makes the concentration of the etching gas tend to be uniform, thereby improving the uniformity of the etching of the wafer 200.

[0055] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A wafer etching apparatus, characterized in that, The device includes a housing with a chamber, a support frame, a driver, and a gas supply pipe located within the chamber. The support frame is fixedly disposed within the chamber and is used to support a wafer. The gas supply pipe is located beside the support frame and is rotatably disposed within the chamber. The driver is driven to the gas supply pipe and is used to drive the gas supply pipe to rotate around the outer periphery of the support frame. A nozzle communicating with the gas supply pipe is disposed on the side of the gas supply pipe facing the support frame.

2. The wafer etching apparatus as described in claim 1, characterized in that, The wafer etching apparatus includes a gas source located outside the chamber, the gas source being connected to the gas supply pipe via an inlet pipe, and the gas source and the inlet pipe being connected via a rotary joint, the rotary joint being located on the rotation center line of the gas supply pipe.

3. The wafer etching apparatus as described in claim 1, characterized in that, A circular slide rail is provided in the chamber, and the circular slide rail surrounds the outer periphery of the support frame. The gas supply pipe is slidably connected to the circular slide rail.

4. The wafer etching apparatus as described in claim 1, characterized in that, The number of gas supply pipes is multiple, the multiple gas supply pipes are interconnected, and the multiple gas supply pipes are arranged along the outer periphery of the support frame.

5. The wafer etching apparatus according to any one of claims 1 to 4, characterized in that, The wafer etching apparatus further includes a plurality of exhaust ports disposed on the housing, the plurality of exhaust ports being respectively connected to the chamber.

6. The wafer etching apparatus as described in claim 5, characterized in that, The wafer etching apparatus also includes exhaust pipes located outside the housing and connected to the plurality of exhaust ports.

7. The wafer etching apparatus according to any one of claims 1 to 4, characterized in that, Multiple nozzles are provided on the gas transmission pipe, and the multiple nozzles are arranged linearly along the axial direction of the gas transmission pipe.

8. The wafer etching apparatus as described in claim 7, characterized in that, The support frame is provided with multiple layers of wafers, and each layer of wafers is provided with at least one nozzle.

9. The wafer etching apparatus as described in claim 7, characterized in that, The nozzle is trumpet-shaped.

10. The wafer etching apparatus as claimed in claim 2, characterized in that, The rotary joint is a two-way rotary joint.

11. The wafer etching apparatus according to any one of claims 1 to 4, characterized in that, The wafer etching apparatus is a wafer chemical release etching apparatus.

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