Semiconductor package structure
CN224698304UActive Publication Date: 2026-08-28SHANGHAI XINWEI SEMICON CO LTD
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Patent Information
- Application Number
- CN202521997815.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-16
- Publication Date
- 2026-08-28
- Estimated Expiration
- 2035-09-16
AI Technical Summary
Technical Problem
采用这两种封装方式，热量通过芯片衬底传导到框架基岛进行散热，散热途径比较单一，且由于采用打线的方式进行封装，打线电阻和打线电感也会相对较大
Benefits of technology
[0017]综上所述，本实用新型提供的半导体封装结构，包括：芯片、框架基岛和封装体；所述芯片包括位于正面的源极、漏极和栅极，所述芯片倒装于所述框架基岛；所述框架基岛包括互不交叠的源极基岛、漏极基岛和栅极基岛，所述源极基岛、所述漏极基岛及所述栅极基岛的位置根据所述源极、所述漏极及所述栅极之间的相对位置进行布置，以使得当所述芯片倒装于所述框架基岛时，所述源极、所述漏极和所述栅极能够分别与所述源极基岛、所述漏极基岛和所述栅极基岛一一上下对应；所述芯片和所述框架基岛通过所述封装体封装。本实用新型提供的半导体封装结构，通过独特的框架基岛设计，使得芯片能够倒装在框架基岛上，无需打线，封装电阻和电感均得以优化。
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Figure CN224698304U_ABST
Abstract
The utility model provides a kind of semiconductor packaging structure, comprising: chip, frame base island and package body;The chip includes source electrode, drain electrode and gate on front, the chip is inverted in the frame base island;The frame base island includes mutually non-overlapping source electrode base island, drain electrode base island and gate base island, the position of the source electrode base island, the drain electrode base island and the gate base island is arranged according to the relative position between the source electrode, the drain electrode and the gate, so that when the chip is inverted in the frame base island, the source electrode, the drain electrode and the gate can be respectively with the source electrode base island, the drain electrode base island and the gate base island one-to-one upper and lower correspondence;The chip and the frame base island are packaged by the package body.The semiconductor packaging structure provided by the utility model is designed by unique frame base island, so that chip can be inverted on frame base island, without wire, and resistance and inductance are optimized.
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