Interconnection structure and interconnection unit
CN224698308UActive Publication Date: 2026-08-28CHENGDU WANYING MICRO ELECTRONICS CO LTD
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Patent Information
- Application Number
- CN202521859120.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-29
- Publication Date
- 2026-08-28
- Estimated Expiration
- 2035-08-29
AI Technical Summary
Technical Problem
然而,这种三维堆叠结构也带来了新的技术挑战,其中最关键的就是如何实现高效、可靠且高带宽的垂直互联,这已成为当前封装领域亟待攻克的核心难点之一
Benefits of technology
[0028]在上述实现过程中,第三填充物将各互联结构间的间隙填满并固化,形成整体绝缘支撑框架,防止相邻金属体桥连,同时抑制翘曲与微裂,同步提升电绝缘可靠性和机械强度。
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Abstract
The application provides an interconnection structure and an interconnection unit, and relates to the technical field of integrated circuits. The interconnection structure comprises an intermediate layer, a first interconnection layer, a second interconnection layer, a first base layer and a second base layer. The first interconnection layer comprises a first interconnection column, and the second interconnection layer comprises a second interconnection column. The first interconnection column and the second interconnection column have similar structures. The intermediate layer comprises a first spherical body, which is connected to one side of the first interconnection column and the second interconnection column respectively. The other side of the first interconnection column is connected to the first base layer, and the other side of the second interconnection column is connected to the second base layer. The interconnection structure and the interconnection unit can realize high-density electrical connection, thereby constructing a three-dimensional heterogeneous integrated structure of a multi-layer stacked chip, effectively buffering thermal mechanical stress, and providing key mechanical support and stress distribution optimization for the stacked structure.
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