Furnace tubes and vapor deposition equipment

Abstract

This invention provides a furnace tube and a vapor deposition apparatus. The furnace tube includes: a furnace tube body with a reaction chamber inside; a crystal boat disposed within the reaction chamber, wherein the crystal boat includes: a base; a support rod connected to the base, the support rod having opposing protrusions, a wafer being placed on the protrusions, and at least one support rod having a purge hole between adjacent protrusions; a purge assembly disposed within the reaction chamber, providing purge gas to the wafer through the purge holes; a sensor disposed within the reaction chamber and electrically connected to the purge assembly, detecting the operating electrical parameters of the purge assembly during operation; and a detection assembly electrically connected to the sensor, used to generate an indication signal characterizing the operating status of the purge assembly based on the operating electrical parameters and preset electrical parameters. By adopting the above technical solution, the cleanliness within the furnace tube can be improved, thereby improving the wafer processing quality.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a furnace tube and vapor deposition equipment. Background Technology

[0002] Heat treatment of wafers within furnace tubes is an indispensable core process in semiconductor manufacturing. Furnace tubes provide a high-temperature environment to achieve targeted control of the properties of silicon-based materials, and are widely used in critical processes such as oxidation, diffusion, annealing, and chemical vapor deposition. Taking oxidation as an example, dry oxygen oxidation requires temperatures above 1000℃ to allow silicon to react with oxygen to form a silicon dioxide dielectric layer.

[0003] During the heat treatment process, some particles are introduced. If these particles remain inside the furnace tube for a long time, they will fall onto the wafer, causing damage.

[0004] Against this backdrop, how to provide technical solutions to improve the cleanliness inside the furnace tube and thus improve the quality of wafer processing has become a technical problem that urgently needs to be solved by those skilled in the art. Utility Model Content

[0005] In view of this, the present invention provides a furnace tube and a vapor deposition equipment, which can improve the cleanliness inside the furnace tube and thus improve the quality of wafer processing.

[0006] This utility model provides a furnace tube, comprising:

[0007] The furnace tube body has a reaction chamber inside it;

[0008] A crystal boat is disposed in the reaction chamber, wherein the crystal boat includes: a base, a support rod connected to the base, the support rod having oppositely arranged protrusions, a wafer being placed on the protrusions, and at least one support rod having a purge hole between adjacent protrusions;

[0009] A purge assembly, disposed within the reaction chamber, supplies purge gas to the wafer through the purge port;

[0010] A sensor is installed in the reaction chamber and electrically connected to the purging assembly to detect the operating electrical parameters of the purging assembly during operation.

[0011] The detection component, electrically connected to the sensor, is used to generate an indication signal characterizing the operating status of the purging component based on the operating electrical parameters and preset electrical parameters.

[0012] Optionally, there are multiple purge holes and multiple purge components, with one purge component corresponding to one purge hole.

[0013] Optionally, the number of purge holes may be multiple, and the number of purge components may be one;

[0014] The furnace tube further includes: a slide rail assembly disposed within the reaction chamber and parallel to the support rod;

[0015] The purging assembly is mounted on the slide rail assembly.

[0016] Optionally, the purging assembly includes a fan.

[0017] Optionally, the operating electrical parameters include an operating current value, and the preset electrical parameters include a first current value and a second current value, wherein the first current value and the second current value are different;

[0018] The detection component includes:

[0019] A first comparator, wherein the operating current value is input to a first input terminal and the first current value is input to a second input terminal, is used to generate a first comparison signal based on the magnitude between the operating current value and the first current value;

[0020] A second comparator, wherein the operating current value is input to its second input terminal and the second current value is input to its first input terminal, is used to generate a second comparison signal based on the magnitude between the operating current value and the second current value;

[0021] A logic arithmetic unit is electrically connected to the output terminals of the first comparator and the second comparator, respectively, and is configured to perform logical operations on the first comparison signal and the second comparison signal to generate a status signal.

[0022] An indicator, connected to the output of the logic unit, is used to generate the indicator signal in response to a status signal.

[0023] Optionally, the logic unit includes NOR gates;

[0024] The indicator includes a light-emitting diode.

[0025] Optionally, the furnace tube body includes: a base; a housing covering the base, the housing including: a side wall surrounding the reaction chamber; and a top wall connected to the top of the side wall; wherein the side wall, the top wall, and the base enclose the reaction chamber.

[0026] Optionally, the furnace tube also includes:

[0027] An air inlet is located on the side wall and close to the base;

[0028] An air inlet pipe is provided through the air inlet, with one end of the air inlet pipe extending to the furnace tube body, for supplying gas to the reaction chamber;

[0029] The exhaust port is located on the other side wall, near the base.

[0030] Optionally, the furnace tube also includes:

[0031] A heating assembly is provided along the outer wall of the furnace tube body for heating the furnace tube body;

[0032] The insulation component is fitted onto the outer wall of the furnace tube body.

[0033] Accordingly, this disclosure also provides a vapor deposition apparatus, including: the furnace tube described in any of the foregoing embodiments.

[0034] Compared with the prior art, the technical solution of the utility model embodiment has the following advantages:

[0035] The furnace tube provided by the utility model embodiment has, on the one hand, a blowing assembly adapted to the blowing hole is set inside the furnace tube, which can blow particles away from the wafer surface in a timely manner; on the other hand, a sensor and detection assembly are set to obtain the operating status of the blowing assembly in real time, and then deal with it in a timely manner when it is determined that the blowing assembly is abnormal, so as to improve the cleanliness of the furnace tube. Attached Figure Description

[0036] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the drawings used in the description of the embodiments of this disclosure or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 A schematic diagram of particle deposition on a wafer surface is shown;

[0038] Figure 2 A schematic diagram of the structure of a furnace tube according to one embodiment of the present invention is shown;

[0039] Figure 3 A schematic diagram of the structure of a detection component in one embodiment of the present invention is shown. Detailed Implementation

[0040] In the following description, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of this invention. Therefore, the drawings and description are considered exemplary in nature and not restrictive.

[0041] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, features defined as "first" or "second" may explicitly or implicitly include one or more of the stated features. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified. It should be noted in the description of this utility model that, unless otherwise explicitly specified and limited, the terms "installed," "connected," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows for mutual communication; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0042] The following disclosure provides many different embodiments or examples for implementing various structures of this invention. To simplify the disclosure, specific examples of components and arrangements are described below. These are merely examples and are not intended to limit the scope of the invention. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, examples of various specific processes and materials are provided in this invention, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0043] As described in the background section, if particles remain inside the furnace tube for an extended period, they will fall onto the wafer, causing damage to the wafer.

[0044] For example, see Figure 1 The diagram shown illustrates a wafer surface particle deposition pattern. Figure 1 As shown, wafer W has multiple particles P. Therefore, during heat treatment, residual particles P will damage wafer W. For example, scratches may appear on the surface of wafer W.

[0045] To address the aforementioned technical issues, on the one hand, this invention incorporates a purging assembly inside the furnace tube that is compatible with the purging holes, enabling timely removal of particles from the wafer surface; on the other hand, it includes sensors and detection components that can acquire the real-time operating status of the purging assembly, and promptly address any abnormalities in the purging assembly to improve the cleanliness of the furnace tube.

[0046] To enable those skilled in the art to have a clearer understanding of the technical concepts, principles, advantages, etc. contained in the embodiments of this disclosure, a detailed description will be provided below with reference to the accompanying drawings, specific embodiments, and specific application scenarios.

[0047] See Figure 2 The schematic diagram shown is of a furnace tube structure in one embodiment of the present invention. Figure 2 As shown, the furnace tube may include:

[0048] The furnace tube body (not shown in the figure) has a reaction chamber S inside;

[0049] A crystal boat (not shown in the figure) is disposed within the reaction chamber S, wherein the crystal boat includes: a base 22, and a support rod connected to the base 22 (as a non-limiting example). Figure 2 The first support rod 24 and the second support rod 26 are shown, and the support rods have opposing protrusions T (it should be noted that...). Figure 2 (Only one of the protrusions is shown as a reference numeral), the wafer W is placed on the protrusion T, and at least one support rod has a purge hole G between adjacent protrusions T (as a non-limiting example, the second support rod 26 has a purge hole G, and five of the purge holes G are shown).

[0050] Purging assembly 30 (It should be noted that, Figure 2 (Only one of the purge components is shown in the diagram), which is located in the reaction chamber S and provides purge gas to the wafer W through the purge port G;

[0051] A sensor (not shown in the figure) is installed in the reaction chamber S and electrically connected to the purging assembly 30 to detect the working electrical parameters of the purging assembly 30 during operation.

[0052] The detection component 40 is electrically connected to the sensor and is used to generate an indication signal that characterizes the operating status of the purging component 30 based on the operating electrical parameters and preset electrical parameters.

[0053] Specifically, the reaction chamber S defines the processing environment, the crystal boat is placed in the reaction chamber S, and the wafer W is placed on the crystal boat, so that the wafer W can be heat-treated.

[0054] After heat treatment, considering the presence of impurities such as particles, the purging assembly 30 can be activated. Since the second support rod 26 is provided with a purging hole G, the purging assembly 30 can provide purging gas to the crystal surface of the wafer W through the purging hole G. Under the action of the purging gas, particles on the crystal surface will be carried away, improving the cleanliness of the wafer W surface. Furthermore, the purging gas can also blow some particles out of the reaction chamber S, correspondingly improving the cleanliness of the reaction chamber S.

[0055] During the operation of the purging assembly 30, the sensor can monitor the working electrical parameters generated by the purging assembly 30 in real time (it is understood that the working electrical parameters of the purging assembly 30 are different in different states), and then transmit the working electrical parameters to the detection assembly 40, so that the detection assembly 40 can generate an indication signal to characterize the operating state of the purging assembly 30 based on the working electrical parameters and preset electrical parameters.

[0056] According to the indication signal, when the purging component 30 is found to be abnormal, it can be dealt with in a timely manner, so that the purging component is always in a normal working state, so as to avoid the inability to blow away particles due to the insufficient purging gas flow rate, and the wafer W being displaced due to the excessive purging gas flow rate.

[0057] It should be noted that, firstly, Figure 2 The schematic diagram of the crystal boat's structure and shape is merely illustrative and serves to represent a component within the reaction chamber that carries the wafer. Secondly, when the protrusion is a top-layer protrusion, the purge port G is located above the top-layer protrusion. Thirdly, the placement of the purge assembly 30 is merely illustrative; it is sufficient to provide purge gas to the wafer through the purge port. For example, a flow guide can be provided within the reaction chamber to guide the purge gas to the purge port. Fourthly, the furnace tube in this design is a vertical furnace tube, meaning it is placed vertically. In some other embodiments, the furnace tube can also be a horizontal furnace tube, meaning it is placed horizontally. Finally, when the purge assembly is placed within the reaction chamber, a high-temperature resistant impeller is installed within the reaction chamber, and a magnet is installed in the corresponding portion outside the reaction chamber to drive the movement of the purge assembly.

[0058] Specifically, in one embodiment, the purging assembly can be disposed on the side wall of the reaction chamber. For example, depending on the installation position of the purging assembly, holes are made on both sides of the chamber, wherein the diameter of the holes needs to be slightly larger than the diameter of the fan outlet; a thickened metal substrate is welded or bolted to the side wall to enhance local rigidity, and the purging assembly is placed on the metal substrate.

[0059] In addition, rubber can be added between the purging assembly and the metal substrate to improve the shock absorption effect.

[0060] In this embodiment, multiple wafers are typically placed on the crystal boat, and these wafers are arranged sequentially along the vertical direction. During heat treatment, gas flows between the wafers in different layers, and each wafer is susceptible to contamination.

[0061] Therefore, the number of purge holes in this solution is multiple. Correspondingly, the number of purge components is multiple, and one purge component is provided for each purge hole.

[0062] This allows for the configuration of a purging assembly for each wafer, thereby improving the cleanliness of each wafer surface. Furthermore, by setting up multiple purging assemblies, even if some purging assemblies fail, the remaining purging assemblies can still provide purging gas normally, which can improve the fault tolerance and stability of the purging process.

[0063] It should be noted that when there are multiple purging components, there are also multiple sensors and detection components, and the number of purging components, sensors, and detection components is the same.

[0064] In this embodiment, the inventors further discovered that wafers located in a certain area within the furnace tube are more likely to be contaminated by particles. Therefore, purge holes and purge components can be provided in this area. This reduces the number of purge components required while maintaining purge capability.

[0065] In this embodiment, there are multiple purge holes and one purge assembly. Purge gas is supplied to different purge holes through one purge assembly.

[0066] Correspondingly, the furnace tube may further include: a slide rail assembly disposed within the reaction chamber and parallel to the support rod; the purging assembly is disposed on the slide rail assembly.

[0067] In other words, the slide rail assembly is arranged parallel to the support rod. When the slide rail assembly is in action, it can drive the purging assembly to move in a direction parallel to the support rod. Thus, when a purging hole is opened on the support rod, the purging gas can be transmitted to the wafer surface.

[0068] In some alternative embodiments, the movement of the slide rail assembly can be controlled by PID control, thereby enabling the purging of wafers in specific areas to improve the purging effect.

[0069] In this embodiment, the purging assembly may include a fan. In some other embodiments, the purging assembly may also include an aerosol jetting device.

[0070] As the purging assembly operates for an extended period of time, and as the environment within the reaction chamber changes, the operating status of the purging assembly will fluctuate, and it may even stop working altogether, leaving particles on the wafer.

[0071] Furthermore, considering the impact of factors such as aging on the purging assembly, the electrical parameters will also fluctuate when the purging assembly is in normal operation. Therefore, it can be determined whether the purging assembly meets the requirements within a certain range.

[0072] In this embodiment, the operating electrical parameters include the operating current value, and the preset electrical parameters include a first current value and a second current value, wherein the first current value and the second current value are different.

[0073] In this embodiment, the first current value can be greater than the second current value. In some other embodiments, the first current value can be less than the second current value.

[0074] Accordingly, see Figure 3 The diagram shown is a structural schematic of a detection component in one embodiment of the present invention. Figure 3 As shown, the detection component 40 may include:

[0075] The first comparator 42 has a first input terminal (e.g., inverting input terminal) to receive the operating current value I, and a second input terminal (e.g., non-inverting input terminal) to receive the first current value I1, and is used to generate a first comparison signal based on the magnitude between the operating current value I and the first current value I1;

[0076] The second comparator 44 has the operating current value I input at its second input terminal (e.g., non-inverting input terminal) and the second current value I2 input at its first input terminal (e.g., inverting input terminal), and is used to generate a second comparison signal based on the magnitude between the operating current value I and the second current value I2.

[0077] The logic unit 46 is electrically connected to the output terminals of the first comparator 42 and the second comparator 44, respectively, and is configured to perform logical operations on the first comparison signal and the second comparison signal to generate a status signal.

[0078] Indicator 48 is connected to the output of the logic unit 46 and is used to generate the indication signal in response to the status signal.

[0079] Specifically, since the first current value I1 and the second current value I2 are different, by comparing the working current value I with the first current value I1 and the second current value I2 respectively and performing logical operations, the relative magnitude relationship between the working current value I, the first current value I1 and the second current value I2 can be determined, thereby enabling the output of indication signals for different states.

[0080] Furthermore, by comparing the first current value I1 and the second current value I2 with the operating current value I, the range of the operating current value I can be determined, thereby relaxing the restrictions on the operating current value I. Even if the operating current value I fluctuates, it is still possible to determine whether the purging assembly meets the design requirements, which improves the working stability of the purging assembly.

[0081] Furthermore, based on the relative magnitudes between the first current value I1 and the operating current value I, and the relative magnitudes between the second current value I2 and the operating current value I, the first comparison signal and the second comparison signal output to the logic unit 46 are made to have different states.

[0082] In this embodiment, the first comparator 42 and / or the second comparator 44 may include a hysteresis comparator. By employing a hysteresis comparator, the output of the comparator can be prevented from fluctuating when the operating current value I is close to the first current value I1 or the second current value I2, thereby improving the output stability of the first comparator 42 and / or the second comparator 44. Specific implementation examples of the hysteresis comparator can be found in the descriptions of existing solutions, and will not be elaborated upon here.

[0083] See next Figure 3 The logic unit 46 may include: a NOR gate, the first input of which is coupled to the output of the first comparator 42, the second input of which is coupled to the output of the second comparator 44, and the output of which is coupled to the indicator 48.

[0084] Specifically, by performing a logical OR-NOT operation on the first comparison signal and the second comparison signal, the level of the status signal is made the same as the level of the first comparison signal and / or the second comparison signal.

[0085] For example, if the first comparison signal is high and the second comparison signal is low, the status signal will be high after a logical OR operation; or, for example, if the first comparison signal is low and the second comparison signal is low, the status signal will be high after a logical OR operation.

[0086] It should be noted that in some other embodiments, the logic unit 46 can also be a device that implements other logic operation functions. This embodiment does not impose any restrictions on this, such as a combination of an OR gate and an inverter.

[0087] In this embodiment, the indicator 48 can be a light-emitting diode (LED), and the brightness change of the LED is used to determine whether there is an abnormality in the purging component.

[0088] It should be noted that indicator 48 can also be other devices or units with state switching, such as buzzers.

[0089] To facilitate understanding of the working mechanism of the detection component, combined with Figure 3 An example is provided.

[0090] See Figure 3 Assuming that the first current value I1 is greater than the second current value I2 (i.e., the first current value I1 is the upper limit and the second current value I2 is the lower limit), based on the detected operating current value I, the first comparison signal and the second comparison signal have a state that is adapted to it.

[0091] Case 1: If the operating current value I is greater than the first current value I1, it is also greater than the second current value I2. Then, after passing through the first comparator 42, the first comparison signal is low; while after passing through the second comparator 44, the second comparison signal is high. After the NOR gate performs NOR operation, the status signal is high, enabling the indicator 48, indicating that there is an abnormality in the purging assembly.

[0092] Case 2: If the operating current value I is less than the first current value I1 but greater than the second current value I2, then the first comparison signal is low after passing through the first comparator 42; and the second comparison signal is low after passing through the second comparator 44. After the NOR gate performs NOR operation, the status signal output to the indicator 48 is low to high level, and the indicator 48 is not enabled, indicating that there is an abnormality in the purging component.

[0093] Case 3: If the operating current value I is less than the second current value I2, it is also less than the first current value I1. Then, after passing through the first comparator 42, the first comparison signal is high; while after passing through the second comparator 44, the second comparison signal is low. After passing through the NOR gate, the status signal is high, enabling the indicator 48, indicating that there is an abnormality in the purging assembly.

[0094] Therefore, by using a detection component, it is possible to determine whether the output current of the purging component in operation meets the design requirements, thereby enabling timely processing of the purging component.

[0095] In this embodiment, see next. Figure 2 The furnace tube body may include: a base 18; and a housing (not shown in the figure) covering the base 18, the housing including: sidewalls surrounding the reaction chamber S (as a non-limiting example). Figure 2 Side walls 12 and 14 are shown; a top wall 16 is connected to the top of the side walls; wherein the side walls 12 and 14, the top wall 16 and the base 18 enclose the reaction chamber S.

[0096] In this embodiment, see Figure 2 The furnace tube may also include:

[0097] An air inlet (not shown in the figure) is provided on the side wall (as a non-limiting example, the air inlet is provided on the side wall 12) and close to the base 18;

[0098] An air inlet pipe 50 is provided through the air inlet, with one end of the air inlet pipe 50 extending to the furnace tube body, for supplying gas to the reaction chamber S;

[0099] An exhaust port K is disposed on another side wall (as a non-limiting example, the exhaust port K is disposed on side wall 14) and close to the base 18.

[0100] In other words, in some applications, the reaction gas is supplied to the reaction chamber through the intake pipe 50. After heat treatment, some residual gas can be discharged through the exhaust port K.

[0101] Furthermore, by placing the intake pipe 50 and the exhaust port K on opposite sides, the duration of reaction of the gas can be extended, thereby improving the utilization rate of the gas.

[0102] In this embodiment, the air inlet pipe 50 can preheat the reaction gas, so that the temperature difference between the preheated reaction gas and the temperature inside the reaction chamber S is small, thereby improving the temperature field uniformity inside the reaction chamber S during the discharge of the reaction gas, and thus improving the coating quality of silicon-based materials when the furnace tube is coated.

[0103] In some alternative embodiments, in order to fully preheat the reaction gas, the inlet pipe 50 may also extend into the reaction chamber S and be spirally arranged along the outer wall of the crystal boat, so that the outlet of the inlet pipe 50 is located at the top wall 16.

[0104] Therefore, when the reactant gas enters the inlet pipe 50, because the inlet pipe 50 is spiral-shaped and travels a relatively long distance within the reaction chamber S, the reactant gas can be fully preheated during its flow through the inlet pipe 50. When the reactant gas exits from the exhaust port of the inlet pipe 50, the temperature of the reactant gas is very close to the temperature inside the reaction chamber S itself. This reduces the influence on the temperature inside the reaction chamber S, ensuring that the temperature of the reaction chamber S remains stable and improving the quality of the heat treatment.

[0105] In this embodiment, the reaction gas may include one or more of silane, oxygen, and nitrogen. This embodiment does not limit this.

[0106] In some alternative embodiments, when the outlet of the gas inlet duct is located on the side where the top wall is located, the furnace tube may further include: a distribution assembly disposed within the reaction chamber, wherein the outlet of the gas inlet duct at least partially passes through the distribution assembly and extends into the reaction chamber to guide gas to the crystal boat through the distribution assembly.

[0107] In this embodiment, the distribution component is provided with multiple uniformly distributed distribution ports. These ports can be used to homogenize the reaction gas and guide it to the crystal boat, thereby improving the uniformity of the reaction gas falling onto the crystal boat and reducing the film quality differences at different locations on the wafer.

[0108] It should be noted that, in the case of a dispensing component, the device also includes a connector for connecting the dispensing component to the top wall to achieve a fixed connection of the dispensing component.

[0109] In this embodiment, the furnace tube may further include:

[0110] A heating assembly is provided along the outer wall of the furnace tube body for heating the furnace tube body.

[0111] By incorporating heating components, the temperature within the reaction chamber can be increased, thereby providing a suitable temperature for the wafer processing.

[0112] The insulation component is fitted onto the outer wall of the furnace tube body.

[0113] Insulation components can be used to insulate furnace tubes, which can prevent heat loss and also prevent the safety hazards caused by the high temperature of the furnace tubes being transferred to the environment.

[0114] In this embodiment, the insulation component may include at least one of the following: heat insulation cotton component, heat insulation fiber component, and nano-ceramic component.

[0115] It should be noted that when installing insulation on the outer wall of the furnace tube body, the air inlet and exhaust outlet should be exposed.

[0116] It should be noted that the furnace tube may actually include other components. In order to facilitate the description of the technical solution of this disclosure and to highlight the innovative part of this disclosure, the components of the furnace tube that can be realized by the prior art have been omitted in this disclosure.

[0117] This application describes multiple embodiment schemes provided by the present utility model. The optional methods described in each embodiment scheme can be combined and cross-referenced with each other without conflict, thereby extending to a variety of possible embodiment schemes. These can all be considered as the embodiment schemes disclosed and made public by the present utility model.

[0118] This disclosure also provides a vapor deposition apparatus corresponding to the furnace tube described in any of the above embodiments, which will be described below. It should be noted that the description of the vapor deposition apparatus below can be referred to in conjunction with the description of the furnace tube above.

[0119] In some embodiments, the vapor deposition apparatus may include the furnace tube described in any of the foregoing embodiments. Specific details regarding the structure, connections, functions, and working principles of the furnace tube can be found in the descriptions and figures above, and will not be repeated here.

[0120] In some embodiments, the vapor deposition apparatus may include a chemical vapor deposition (CVD) machine.

[0121] While the embodiments disclosed herein are as described above, the utility model is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of this utility model; therefore, the scope of protection of this utility model should be determined by the scope defined in the claims.

Claims

1. A furnace tube, characterized in that, include: The furnace tube body has a reaction chamber inside it; A crystal boat is disposed in the reaction chamber, wherein the crystal boat includes: a base, a support rod connected to the base, the support rod having oppositely arranged protrusions, a wafer being placed on the protrusions, and at least one support rod having a purge hole between adjacent protrusions; A purge assembly, disposed within the reaction chamber, supplies purge gas to the wafer through the purge port; A sensor is installed in the reaction chamber and electrically connected to the purging assembly to detect the operating electrical parameters of the purging assembly during operation. The detection component, electrically connected to the sensor, is used to generate an indication signal characterizing the operating status of the purging component based on the operating electrical parameters and preset electrical parameters.

2. The furnace tube according to claim 1, characterized in that, The number of purge holes is multiple, the number of purge components is multiple, and one purge component is provided for each purge hole.

3. The furnace tube according to claim 1, characterized in that, The number of purge holes is multiple, and the number of purge components is one; The furnace tube further includes: a slide rail assembly disposed within the reaction chamber and parallel to the support rod; The purging assembly is mounted on the slide rail assembly.

4. The furnace tube according to any one of claims 1 to 3, characterized in that, The purging assembly includes a fan.

5. The furnace tube according to claim 1, characterized in that, The operating electrical parameters include the operating current value, and the preset electrical parameters include a first current value and a second current value, wherein the first current value and the second current value are different. The detection component includes: A first comparator, wherein the operating current value is input to a first input terminal and the first current value is input to a second input terminal, is used to generate a first comparison signal based on the magnitude between the operating current value and the first current value; A second comparator, wherein the operating current value is input to its second input terminal and the second current value is input to its first input terminal, is used to generate a second comparison signal based on the magnitude between the operating current value and the second current value; A logic arithmetic unit is electrically connected to the output terminals of the first comparator and the second comparator, respectively, and is configured to perform logical operations on the first comparison signal and the second comparison signal to generate a status signal. An indicator, connected to the output of the logic unit, is used to generate the indicator signal in response to a status signal.

6. The furnace tube according to claim 5, characterized in that, The logic unit includes NOR gates; The indicator includes a light-emitting diode.

7. The furnace tube according to claim 1, characterized in that, The furnace tube body includes: a base; a shell covering the base, the shell including: a side wall surrounding the reaction chamber; and a top wall connected to the top of the side wall; wherein the side wall, the top wall, and the base enclose the reaction chamber.

8. The furnace tube according to claim 7, characterized in that, Also includes: An air inlet is located on the side wall and close to the base; An air inlet pipe is provided through the air inlet, with one end of the air inlet pipe extending to the furnace tube body, for supplying gas to the reaction chamber; The exhaust port is located on the other side wall, near the base.

9. The furnace tube according to claim 1, characterized in that, Also includes: A heating assembly is provided along the outer wall of the furnace tube body for heating the furnace tube body; The insulation component is fitted onto the outer wall of the furnace tube body.

10. A vapor deposition apparatus, characterized in that, Includes the furnace tube as described in any one of claims 1 to 9.

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