A leak-proof device for a single crystal furnace

Abstract

This utility model belongs to the field of single crystal furnace technology, specifically a single crystal furnace leak-proof device, including a single crystal furnace body, a support leg fixedly connected to the side wall of the single crystal furnace body; a base plate fixedly connected to the bottom of the support leg; a first motor fixedly connected to the side wall of the single crystal furnace body; a receiving hopper fixedly connected to the output end of the first motor; a flow pipe opened on the side wall of the receiving hopper; an outflow pipe fixedly connected inside the single crystal furnace body; a solenoid valve fixedly connected inside the outflow pipe; a feeding pipe fixedly connected to the top of the single crystal furnace body; and a melting tank fixedly connected inside the single crystal furnace body. By adding a receiving hopper, leaked polycrystalline silicon liquid can be collected, reducing the possibility of polycrystalline silicon overflowing from the melting tank due to high temperature and damaging peripheral components. At the same time, the addition of the flow pipe and the outflow pipe allows for rapid collection and discharge of polycrystalline silicon liquid.

Description

Technical Field

[0001] This utility model relates to the field of single crystal furnace technology, specifically a single crystal furnace leak prevention device. Background Technology

[0002] A single crystal furnace is a specialized piece of equipment used to grow single crystals. It is widely used in semiconductor, photovoltaic and other fields. It cultivates high-purity single crystal materials by controlling conditions such as temperature and air pressure. Its core principle is to use the melting-crystallization process to melt raw materials such as polycrystalline silicon in the furnace and then slowly pull them out from the seed crystal to form a single crystal rod with a complete structure.

[0003] Polycrystalline silicon is first heated to a molten state in a single crystal furnace to form a silicon melt. Then, a seed crystal is slowly lowered to the surface of the melt. After it merges with the melt, the silicon atoms are arranged in an orderly manner along the lattice structure of the seed crystal by precisely controlling the pulling speed and the temperature inside the furnace, and gradually grown into a single crystal silicon rod. The entire process requires strict environmental control to ensure the purity and integrity of the crystal.

[0004] During high-temperature operation, the silicon material inside the existing single crystal furnace is in a molten state at over 1,400 degrees Celsius. Due to the long-term exposure of the crucible or furnace structure to high temperatures, thermal stress, and gas pressure fluctuations, there is still a possibility of leakage. Once the molten silicon leaks, it will not only cause erosion of the internal insulation lining, support structure, and vacuum pipes, but also damage the external components.

[0005] Therefore, a leak prevention device for single crystal furnaces is proposed to address the above problems. Utility Model Content

[0006] In order to overcome the shortcomings of the prior art, at least one technical problem raised in the background art is solved.

[0007] The technical solution adopted by this utility model to solve its technical problem is as follows: The single crystal furnace anti-leakage device of this utility model includes a single crystal furnace body, a support leg fixedly connected to the side wall of the single crystal furnace body; a base plate fixedly connected to the bottom of the support leg; a first motor fixedly connected to the side wall of the single crystal furnace body; a receiving hopper fixedly connected to the output end of the first motor; a flow pipe opened on the side wall of the receiving hopper; an outflow pipe fixedly connected inside the single crystal furnace body; a solenoid valve fixedly connected inside the outflow pipe; a feeding pipe fixedly connected to the top of the single crystal furnace body; and a melting box fixedly connected inside the single crystal furnace body. By adding a receiving hopper, the leaked polycrystalline silicon liquid can be collected, reducing the situation where polycrystalline silicon overflows from the melting box due to high temperature, which may damage peripheral components. At the same time, the addition of the flow pipe and the outflow pipe can be combined to enable the rapid collection and discharge of polycrystalline silicon liquid.

[0008] Preferably, the receiving hopper has a groove inside; an electric push rod is fixed inside the groove; a scraper is fixed to the end of the electric push rod; by adding a scraper, the polysilicon liquid remaining inside the receiving hopper can be scraped off, reducing the possibility of damage to the inner wall of the receiving hopper caused by the polysilicon liquid due to excessive temperature.

[0009] Preferably, a collection box is fixedly connected to the top of the base plate; a square groove is opened at the bottom of the single crystal furnace body; a connecting plate is slidably arranged inside the square groove; a guide plate is rotatably arranged on the side wall of the connecting plate; by adding the guide plate, the position of the polycrystalline silicon liquid flowing out from the inside of the outflow pipe can be adjusted, and after adjustment, the situation of polycrystalline silicon liquid accumulating in a certain place inside the collection box can be reduced, and the guide plate can make the polycrystalline silicon liquid spread evenly.

[0010] Preferably, a second motor is fixedly connected to the side wall of the collection box; a fan is fixedly connected to the output end of the second motor; a square frame is provided outside the fan; by adding a fan, the temperature of the polysilicon liquid can be reduced when it enters the collection box for collection, thus reducing the possibility of the polysilicon liquid being too hot and staying in the collection box for a long time, which could cause damage to the inside of the collection box.

[0011] Preferably, multiple silicon carbide particles are fixed inside the collection box; multiple silicon carbide particles are arranged inside the collection box; by increasing the number of silicon carbide particles, the polycrystalline silicon liquid can be reduced from sticking together into a whole clump, thereby improving the collection and forming effect of the polycrystalline silicon liquid.

[0012] Preferably, a heat-resistant pad is fixed to the inner wall of the feed tube; multiple heat-resistant pads are provided on the inner wall of the feed tube; by adding heat-resistant pads, the occurrence of polycrystalline silicon hitting the inner wall of the feed tube can be reduced, and the contact between the feed tube and the polycrystalline silicon can be reduced, thereby improving the integrity of the polycrystalline silicon molding.

[0013] The advantages of this utility model are: 1. The single crystal furnace leak prevention device of this utility model can collect leaked polycrystalline silicon liquid by adding a receiving hopper, reducing the damage to peripheral components caused by polycrystalline silicon overflowing from the melting box due to high temperature. At the same time, the addition of a flow pipe and an outlet pipe can enable rapid collection and discharge of polycrystalline silicon liquid.

[0014] 2. The single crystal furnace leak-proof device of this utility model can remove the polysilicon liquid remaining inside the receiving hopper by adding a scraper, thereby reducing the damage to the inner wall of the receiving hopper caused by the polysilicon liquid due to excessive temperature. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a schematic diagram of the main body of this utility model; Figure 2 This is a schematic diagram of the structure of the guide plate in this utility model; Figure 3 This is a schematic diagram of the feed tube in this utility model; Figure 4 This is a schematic diagram of the scraper structure in this utility model; Figure 5 This is a schematic diagram of the structure of silicon carbide particles in this utility model.

[0017] In the diagram: 1. Single crystal furnace body; 11. Support leg; 12. Base plate; 13. First motor; 14. Receiving hopper; 15. Outflow pipe; 16. Solenoid valve; 17. Flow pipe; 18. Feed pipe; 19. Melting box; 2. Scraper; 21. Slide chute; 22. Electric actuator; 3. Guide plate; 31. Collection box; 32. Square trough; 33. Connecting plate; 4. Fan; 41. Second motor; 42. Square frame; 5. Silicon carbide particles; 6. Heat-resistant pad. Detailed Implementation

[0018] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present utility model.

[0019] Specific implementation examples are given below.

[0020] like Figures 1 to 5As shown in the embodiment of this utility model, a single crystal furnace leak-proof device includes a single crystal furnace body 1. A support leg 11 is fixedly connected to the side wall of the single crystal furnace body 1. A base plate 12 is fixedly connected to the bottom of the support leg 11. A first motor 13 is fixedly connected to the side wall of the single crystal furnace body 1. A receiving hopper 14 is fixedly connected to the output end of the first motor 13. A flow pipe 17 is opened on the side wall of the receiving hopper 14. An outflow pipe 15 is fixedly connected inside the single crystal furnace body 1. A solenoid valve 16 is fixedly connected inside the outflow pipe 15. An inlet pipe 18 is fixedly connected to the top of the single crystal furnace body 1. A melting tank 19 is fixedly connected inside the single crystal furnace body 1. Polycrystalline silicon liquid is placed into the single crystal furnace body 1 through the inlet pipe 18. After placement, the polycrystalline silicon liquid will preferentially enter the melting tank 19 for heating. When heating inside the melting tank 19, if... If any polysilicon liquid spills out, it will preferentially fall into the receiving hopper 14. When the receiving hopper 14 is filled with too much polysilicon liquid, the first motor 13 can be started. The first motor 13 will then drive the polysilicon liquid in the receiving hopper 14 to rotate. At this time, the flow pipe 17 will align with the outflow pipe 15 and then adhere to the inner wall of the outflow pipe 15. The polysilicon liquid in the receiving hopper 14 will then flow out to the outside of the single crystal furnace body 1 through the outflow pipe 15. The solenoid valve 16 can then be opened. By adding the receiving hopper 14, the leaked polysilicon liquid can be collected, reducing the possibility of polysilicon overflowing from the melting box 19 due to high temperature and damaging the surrounding components. At the same time, the cooperation between the flow pipe 17 and the outflow pipe 15 can enable the polysilicon liquid to be collected and discharged quickly.

[0021] like Figures 1 to 5 As shown, the receiving hopper 14 has a sliding groove 21 inside; an electric push rod 22 is fixedly connected inside the sliding groove 21; a scraper 2 is fixedly connected to the end of the electric push rod 22; when polysilicon liquid flows into the receiving hopper 14, some polysilicon liquid will remain at the bottom of the inner side of the receiving hopper 14. At this time, the electric push rod 22 can be activated, and then the electric push rod 22 will drive the scraper 2 to slide inside the sliding groove 21. At this time, the scraper 2 will scrape off the polysilicon liquid inside the receiving hopper 14, and after scraping, all of it will be scraped into the bottom of the inner side of the receiving hopper 14; by adding the scraper 2, the polysilicon liquid remaining inside the receiving hopper 14 can be scraped off, reducing the possibility of damage to the inner wall of the receiving hopper 14 due to excessively high temperature of the polysilicon liquid.

[0022] like Figures 1 to 4As shown, a collection box 31 is fixedly connected to the top of the base plate 12; a square groove 32 is opened at the bottom of the single crystal furnace body 1; a connecting plate 33 is slidably arranged inside the square groove 32; a guide plate 3 is rotatably arranged on the side wall of the connecting plate 33; when the polysilicon liquid flows out from the outlet pipe 15, it will flow into the collection box 31, which will collect the polysilicon liquid. When it is necessary to change the flow direction of the polysilicon liquid from the outlet pipe 15, the connecting plate 33 can be slid, and then the connecting plate 33 will slide inside the square groove 32. At this time, the position of the polysilicon liquid flowing out can be adjusted by rotating the guide plate 3; by adding the guide plate 3, the position of the polysilicon liquid flowing out from the outlet pipe 15 can be adjusted, which can reduce the accumulation of polysilicon liquid in a certain place inside the collection box 31. The guide plate 3 can make the polysilicon liquid spread evenly.

[0023] like Figures 1 to 5 As shown, a second motor 41 is fixedly connected to the side wall of the collection box 31; a fan 4 is fixedly connected to the output end of the second motor 41; a square frame 42 is provided outside the fan 4; when polysilicon liquid flows into the collection box 31, the second motor 41 can be started, and then the second motor 41 will drive the fan 4 to rotate. When the fan 4 rotates, the polysilicon liquid inside the collection box 31 will be cooled down; by adding the fan 4, the temperature of the polysilicon liquid can be reduced when it enters the collection box 31 for collection, thus reducing the possibility of the polysilicon liquid being too hot and staying inside the collection box 31 for a long time, which could cause damage to the inside of the collection box 31.

[0024] like Figure 5 As shown, multiple silicon carbide particles 5 are fixed inside the collection box 31; multiple silicon carbide particles 5 are arranged inside the collection box 31; when polycrystalline silicon liquid enters the collection box 31, the silicon carbide particles 5 will come into contact with the polycrystalline silicon liquid, and then the silicon carbide particles 5 will quickly disperse and cool the polycrystalline silicon liquid, and quickly solidify it into small pieces; by increasing the number of silicon carbide particles 5, the polycrystalline silicon liquid can be reduced from sticking together into a whole clump, thus improving the collection and forming effect of the polycrystalline silicon liquid.

[0025] like Figure 3 As shown, a heat-resistant pad 6 is fixed to the inner wall of the feed pipe 18; multiple heat-resistant pads 6 are provided on the inner wall of the feed pipe 18; when the polycrystalline silicon liquid enters the single crystal furnace body 1 from the feed pipe 18, the polycrystalline silicon will come into contact with the heat-resistant pad 6, and the heat-resistant pad 6 will make preferential contact with the polycrystalline silicon; by adding heat-resistant pads 6, the occurrence of polycrystalline silicon hitting the inner wall of the feed pipe 18 can be reduced, and the contact between the feed pipe 18 and the polycrystalline silicon can be reduced, thereby improving the molding integrity of the polycrystalline silicon.

[0026] Working principle: Polysilicon liquid is fed into the single crystal furnace body 1 through the feed pipe 18. After placement, the polysilicon liquid will first enter the melting tank 19 for heating. If any polysilicon liquid falls out during heating in the melting tank 19, it will first fall into the receiving hopper 14. When the receiving hopper 14 is overfilled, the first motor 13 can be started. The first motor 13 will then rotate the polysilicon liquid inside the receiving hopper 14. At this time, the flow pipe 17... It will correspond to the outflow pipe 15 and then adhere to the inner wall of the outflow pipe 15. At this time, the polysilicon liquid inside the receiving hopper 14 will flow out to the outside of the single crystal furnace body 1 through the outflow pipe 15. Open the solenoid valve 16. After the polysilicon liquid flows into the receiving hopper 14, some polysilicon liquid will remain at the bottom of the inner side of the receiving hopper 14. At this time, the electric push rod 22 can be activated. Then the electric push rod 22 will drive the scraper 2 to slide inside the slide groove 21. At this time, the scraper 2 will scrape off the polysilicon liquid inside the receiving hopper 14. After scraping, All the polysilicon liquid is scraped into the bottom of the receiving hopper 14. After the polysilicon liquid flows out from the outlet pipe 15, it flows into the collection box 31, where it is collected. To change the flow direction of the polysilicon liquid from the outlet pipe 15, the connecting plate 33 can be slid. The connecting plate 33 will then slide inside the square groove 32. The position of the polysilicon liquid can be adjusted by rotating the guide plate 3. When the polysilicon liquid flows into the collection box 31, the second motor can be started. 41. Subsequently, the second motor 41 will drive the fan 4 to rotate. When the fan 4 rotates, the polysilicon liquid inside the collection box 31 will be cooled. When the polysilicon liquid enters the collection box 31, the silicon carbide particles 5 will come into contact with the polysilicon liquid. Then, the silicon carbide particles 5 will quickly disperse and cool the polysilicon liquid, and quickly solidify it into small pieces. When the polysilicon liquid enters the single crystal furnace body 1 from the feed pipe 18, the polysilicon will come into contact with the heat-resistant pad 6. The heat-resistant pad 6 will make preferential contact with the polysilicon.

[0027] The foregoing has shown and described the basic principles, main features, and advantages of this utility model. Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of this utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claimed utility model.

Claims

1. A leak-proof device for a single crystal furnace, comprising a single crystal furnace body (1), characterized in that: The single crystal furnace body (1) has a support leg (11) fixed to its side wall; a base plate (12) is fixed to the bottom of the support leg (11); a first motor (13) is fixed to the side wall of the single crystal furnace body (1); a receiving hopper (14) is fixed to the output end of the first motor (13); a flow pipe (17) is opened on the side wall of the receiving hopper (14); an outflow pipe (15) is fixed to the inside of the single crystal furnace body (1); a solenoid valve (16) is fixed to the inside of the outflow pipe (15); a feed pipe (18) is fixed to the top of the single crystal furnace body (1); and a melting box (19) is fixed to the inside of the single crystal furnace body (1).

2. The single crystal furnace leak-proof device according to claim 1, characterized in that: The receiving hopper (14) has a sliding groove (21) inside; an electric push rod (22) is fixed inside the sliding groove (21); and a scraper (2) is fixed at the end of the electric push rod (22).

3. The single crystal furnace leak-proof device according to claim 2, characterized in that: A collection box (31) is fixed to the top of the bottom plate (12); a square groove (32) is opened at the bottom of the single crystal furnace body (1); a connecting plate (33) is slidably arranged inside the square groove (32); a guide plate (3) is rotatably arranged on the side wall of the connecting plate (33).

4. The single crystal furnace leak-proof device according to claim 3, characterized in that: The collection box (31) is fixedly connected to a second motor (41) on its side wall; a fan (4) is fixedly connected to the output end of the second motor (41); and a square frame (42) is provided on the outside of the fan (4).

5. A leak-proof device for a single crystal furnace according to claim 4, characterized in that: Multiple silicon carbide particles (5) are fixed inside the collection box (31); multiple silicon carbide particles (5) are arranged inside the collection box (31).

6. The single crystal furnace leak-proof device according to claim 5, characterized in that: A heat-resistant pad (6) is fixed to the inner wall of the feed pipe (18); multiple heat-resistant pads (6) are provided on the inner wall of the feed pipe (18).

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