Semiconductor multi-wafer epitaxial device

Abstract

This utility model relates to a semiconductor multi-wafer epitaxial growth apparatus. The semiconductor multi-wafer epitaxial growth apparatus includes: an epitaxial growth chamber; an epitaxial growth structure located within the epitaxial growth chamber, comprising multiple spaced-apart receiving cavities for accommodating wafers; an inlet flange located within the epitaxial growth chamber, with the inlet flange positioned on one side of the epitaxial growth structure along a first horizontal direction; and an inlet structure located outside the epitaxial growth chamber and communicating with the inlet flange, the inlet structure comprising multiple inlet branch pipes spaced-apart along a second horizontal direction, the inlet branch pipes being used to transmit reactive gases to the epitaxial growth chamber through the inlet flange, the number of inlet branch pipes being four or more, and the first horizontal direction intersecting the second horizontal direction perpendicularly. This utility model improves the uniformity of reactive gas distribution within the epitaxial growth chamber, thereby improving the consistency of the epitaxial layers grown on the surfaces of multiple wafers.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor multi-wafer epitaxy device. Background Technology

[0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advancements in IC materials and design have resulted in several generations of ICs, each with smaller and more complex circuitry than its predecessor. Throughout IC development, functional density (the number of interconnect devices per chip area) has generally increased, while geometric dimensions (the smallest components that can be produced using manufacturing processes) have decreased. In addition to IC components becoming smaller and more complex, the wafers on which ICs are fabricated have become increasingly larger, placing ever higher demands on wafer quality.

[0003] With the increasing demand for the manufacture of specialized devices, substrates formed using epitaxial processes offer advantages such as low cost and low defects, leading to their growing application in this field. Multi-wafer silicon epitaxial furnaces offer higher epitaxial yields compared to single-wafer furnaces, allowing for simultaneous epitaxial growth of multiple silicon wafers. However, ensuring the consistency of the epitaxial layers grown on each wafer in a multi-wafer furnace places high demands on gas flow distribution and the equipment's epitaxial testing methods, as well as on the equipment's product debugging and monitoring methods. Currently, uneven distribution of reactive gases within the epitaxial chambers leads to poor consistency in the epitaxial layers grown on the surfaces of multiple silicon wafers within the chamber. This includes inconsistent thickness and resistivity, affecting the equipment's yield. Improving the uniformity of reactive gas distribution within the epitaxial chambers requires repeated adjustments, which not only reduces equipment throughput and increases debugging costs but also potentially introduces impurities during these adjustments, impacting epitaxial quality.

[0004] Therefore, improving the uniformity of the distribution of reactive gas in the epitaxial chamber, thereby improving the consistency of the epitaxial layers grown on the surface of multiple wafers, reducing debugging operations, and lowering the probability of introducing impurities during debugging, so as to ensure the production yield of semiconductor multi-wafer epitaxial devices while increasing the production capacity of semiconductor multi-wafer epitaxial devices, is a technical problem that urgently needs to be solved. Summary of the Invention

[0005] This invention provides a semiconductor multi-wafer epitaxy apparatus to improve the uniformity of the distribution of reactive gas in the epitaxial chamber, thereby improving the consistency of the epitaxial layers grown on the surface of multiple wafers, reducing debugging operations, and lowering the probability of introducing impurities during debugging. This ensures the production yield of the semiconductor multi-wafer epitaxy apparatus while increasing its production capacity.

[0006] According to some embodiments, this utility model provides a semiconductor multi-wafer epitaxy device, comprising: Epitaxial growth chamber; An epitaxial growth structure, located within the epitaxial growth chamber, includes multiple spaced-apart cavities for accommodating wafers; An air inlet flange is located within the epitaxial growth chamber, and the air inlet flange is located on one side of the epitaxial growth structure along a first horizontal direction; An air intake structure is located outside the epitaxial growth chamber and communicates with the air intake flange. The air intake structure includes a plurality of air intake branches arranged at intervals along a second horizontal direction. The air intake branches are used to transmit the reaction gas to the epitaxial growth chamber through the air intake flange. The number of air intake branches is more than four, and the first horizontal direction intersects the second horizontal direction perpendicularly.

[0007] In some embodiments, the number of intake manifolds is 5.

[0008] In some embodiments, one of the intake branch pipes is connected to the middle of the intake flange, serving as a middle intake branch pipe; The other two intake branch pipes are connected to the two opposite ends of the intake flange along the second horizontal direction, serving as the left intake branch pipe and the right intake branch pipe respectively. The left intake branch pipe and the right intake branch pipe are symmetrically distributed on opposite sides of the middle intake branch pipe. One of the intake branches located between the middle intake branch and the left end intake branch is designated as the left middle intake branch, and the other of the intake branches located between the middle intake branch and the right end intake branch is designated as the right middle intake branch.

[0009] In some embodiments, it also includes: Multiple flow regulators are connected one-to-one with multiple intake manifolds, and each flow regulator is used to independently adjust the flow rate of the reaction gas in the intake manifold to which it is connected.

[0010] In some embodiments, it also includes: Multiple sensors are located within the epitaxial growth chamber, and the multiple sensors are used to detect the thickness of the epitaxial layer grown on the wafer surface in the multiple accommodating chambers during the epitaxial growth process; A controller, connected to multiple sensors and multiple flow regulators, is used to control the multiple flow regulators to adjust the flow rate of the reactant gas in multiple intake manifolds based on the thickness of the epitaxial layer detected by the multiple sensors.

[0011] In some embodiments, it also includes: Multiple gas guiding components are located in the epitaxial growth chamber and connected to the gas inlet flange. Each of the multiple gas guiding components is connected to a corresponding gas inlet branch pipe. The gas guiding components are used to introduce the reaction gas in the corresponding gas inlet branch pipe into the epitaxial growth chamber.

[0012] In some embodiments, the air guiding assembly includes: An air intake block seat is connected to the air intake flange, and the air intake block seat has a flow channel communicating with the air intake branch pipe; An air intake block is located on the side of the air intake block seat opposite to the air intake flange, and the air intake block has a first positioning hole; An air intake cover is located on the side of the air intake block away from the air intake block seat. The air intake cover has a second positioning hole aligned with the first positioning hole. The air intake cover and the air intake block enclose an air cavity. One end of the air cavity is connected to the flow channel, and the other end is connected to the epitaxial growth chamber. The pin is inserted into the first positioning hole and the second positioning hole.

[0013] In some embodiments, the air guiding assembly further includes: A sealing groove is located on the surface of the air intake cover facing the air intake block. The first positioning hole is aligned with the sealing groove. The pin passes through the sealing groove and is inserted into the first positioning hole. The cross-section of the sealing groove is rectangular. The pin sealing ring is located within the sealing groove and is distributed around the outer periphery of the pin.

[0014] In some embodiments, it also includes: A drive structure, connected to the pin, is used to drive the pin to move axially and radially.

[0015] In some embodiments, the plurality of drive structures are connected one-to-one with the pins in the plurality of air guide assemblies; The controller is connected to multiple drive structures and is used to control the multiple drive structures to drive the corresponding pins to move according to the thickness of the epitaxial layer detected by multiple sensors.

[0016] The semiconductor multi-wafer epitaxial device provided by this utility model has an air intake structure connected to an air intake flange outside the epitaxial growth chamber. The air intake structure includes multiple air intake branches spaced apart along a second horizontal direction. The air intake branches are used to transmit the reactive gas to the epitaxial growth chamber through the air intake flange. The number of air intake branches is more than four. The more than four air intake branches can achieve fine adjustment of the distribution of the reactive gas in the epitaxial growth chamber, offset the flow field deviation, and achieve a uniform transition of the reactive gas concentration between different regions in the epitaxial growth chamber. This improves the uniformity of the reactive gas distribution in the epitaxial growth chamber, making the reactive gas distribution in multiple cavities within the epitaxial growth structure more uniform and consistent. This improves the consistency of the epitaxial layer grown on the surface of multiple wafers, reduces debugging operations, and lowers the probability of introducing impurities during debugging. Thus, while ensuring the production yield of the semiconductor multi-wafer epitaxial device, it also increases the production capacity of the semiconductor multi-wafer epitaxial device. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this utility model, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0018] Figure 1 This is a top view schematic diagram of a semiconductor multi-wafer epitaxial device in a specific embodiment of this utility model; Figure 2 This is a schematic diagram showing the relative positional relationship between multiple intake branch pipes and intake flanges in a specific embodiment of this utility model; Figure 3 This is a schematic diagram of the epitaxial growth structure in a specific embodiment of this utility model; Figure 4 This is a schematic diagram of the air guiding component in a specific embodiment of this utility model. Detailed Implementation

[0019] The specific embodiments of the semiconductor multi-wafer epitaxial device provided by this utility model will be described in detail below with reference to the accompanying drawings.

[0020] This specific embodiment provides a semiconductor multi-wafer epitaxy device. Figure 1 This is a top view schematic diagram of a semiconductor multi-wafer epitaxial device according to a specific embodiment of this utility model. Figure 2 This is a schematic diagram showing the relative positional relationship between multiple intake branch pipes and intake flanges in a specific embodiment of this utility model. Figure 3This is a schematic diagram of the epitaxial growth structure in a specific embodiment of this utility model. The semiconductor multi-wafer epitaxial device includes: Epitaxial growth chamber 10; The epitaxial growth structure 11 is located within the epitaxial growth chamber 10 and includes a plurality of spaced-apart receiving cavities 31, which are used to receive wafers. An air inlet flange 12 is located inside the epitaxial growth chamber 10, and the air inlet flange 12 is located on one side of the epitaxial growth structure 11 along the first horizontal direction D1. An air intake structure is located outside the epitaxial growth chamber 10 and communicates with the air intake flange 12. The air intake structure includes a plurality of air intake branches 13 arranged at intervals along the second horizontal direction D2. The air intake branches 13 are used to transmit the reaction gas to the epitaxial growth chamber 10 through the air intake flange 12. The number of air intake branches 13 is more than four, and the first horizontal direction D1 intersects the second horizontal direction D2 perpendicularly.

[0021] For example, the semiconductor multi-wafer epitaxial device includes a wafer loading stage, a wafer unloading stage, a first robotic arm, a transition stage, a wafer transfer chamber, a second robotic arm, and the epitaxial growth chamber 10, wherein the second robotic arm is located within the wafer transfer chamber. During the epitaxial growth process on the wafer within the multi-wafer epitaxial device, the wafer is first transferred to the wafer loading stage. After edge alignment of the wafer is completed, it is transferred to the transition stage by the first robotic arm. Next, the second robotic arm transfers the wafer to the wafer transfer chamber. Once the epitaxial growth structure 11 in the epitaxial growth chamber 10 is free, the second robotic arm transfers the wafer to the receiving cavity 31 to complete the wafer loading process. After the wafer completes the epitaxial growth process in the receiving cavity 31, the second robotic arm transfers the wafer from the epitaxial growth chamber 10 to the wafer transfer chamber, then from the wafer transfer chamber to the transition stage, and finally from the transition stage to the unloading stage to complete the wafer unloading process.

[0022] The epitaxial growth chamber 10 includes the epitaxial growth structure 11, the inlet flange 12, and the exhaust flange 14, with the inlet flange 12 and the exhaust flange 14 distributed along the first horizontal direction D1 on opposite sides of the epitaxial growth structure 11. The inlet flange 12 is used to transfer the reaction gas from the inlet structure into the epitaxial growth chamber 10. Figure 2The solid arrow in the figure indicates the direction of transport of the reactive gas within the inlet flange 12. The reactive gas is deposited on the surface of the wafer and forms the epitaxial layer through a chemical reaction. The residual gas, including the remaining reactive gas and the byproduct gas generated in the chemical reaction, is discharged from the epitaxial growth chamber 10 through the exhaust flange 14. The epitaxial growth structure 11 includes a base 30 and a plurality of receiving cavities 31 arranged in a ring on the base 30, such as... Figure 3 As shown. The plurality of receiving cavities 31 are used to accommodate multiple wafers one by one, so as to simultaneously perform epitaxial growth processes on multiple wafers, thereby forming the epitaxial layer on the surface of multiple wafers at the same time.

[0023] In this specific embodiment, four or more intake branch pipes 13 are provided in the intake assembly located outside the epitaxial growth chamber 10, and the four or more intake branch pipes 13 are arranged at intervals along the second horizontal direction D2 (i.e., the extension direction of the intake flange 12). The intake main pipe 15 is connected to all the intake branch pipes 13 to transmit the reaction gas to each intake branch pipe 13 through the intake main pipe 15. All of the multiple intake branch pipes 13 extend along the first horizontal direction D1, and each of the multiple intake branch pipes 13 corresponds one-to-one with a multiple intracavity region arranged along the second horizontal direction D2 within the epitaxial growth chamber 10. By setting the number of inlet branch pipes 13 to four or more, the number of inlet branch pipes 13 is increased. This not only enables the rapid transmission of the reactant gas to the epitaxial growth chamber 10, but also allows for precise adjustment of the reactant gas distribution within the epitaxial growth chamber 10. This counteracts flow field deviations and achieves a uniform transition of reactant gas concentration between different regions within the epitaxial growth chamber 10. This improves the uniformity of the reactant gas distribution within the epitaxial growth chamber 10, making the reactant gas distribution in the multiple accommodating cavities 31 within the epitaxial growth structure 11 more uniform and consistent. It avoids epitaxial layer uniformity problems caused by sudden changes in reactant gas concentration, thereby improving the consistency of epitaxial layers grown on multiple wafer surfaces, reducing debugging operations, and lowering the probability of introducing impurities during debugging. This ensures the production yield of the semiconductor multi-wafer epitaxial device while increasing its production capacity.

[0024] In some embodiments, the number of intake manifolds 13 is five.

[0025] In some embodiments, one of the intake branch pipes 13 is connected to the middle of the intake flange 12, serving as a middle intake branch pipe; The other two intake branch pipes 13 are connected to the two opposite ends of the intake flange 12 along the second horizontal direction D2, and serve as the left end intake branch pipe and the right end intake branch pipe respectively. The left end intake branch pipe and the right end intake branch pipe are symmetrically distributed on opposite sides of the middle intake branch pipe. One of the intake branches 13 located between the middle intake branch and the left end intake branch is designated as the left middle intake branch, and the other of the intake branches 13 located between the middle intake branch and the right end intake branch is designated as the right middle intake branch.

[0026] In some embodiments, the semiconductor multi-wafer epitaxial device further includes: Multiple flow regulators 16 are connected one-to-one with multiple intake manifolds 13, and each flow regulator 16 is used to independently adjust the flow rate of the reaction gas in the intake manifold 13 to which it is connected.

[0027] Specifically, the air intake structure includes five air intake branches 13: a central air intake branch corresponding to the central region of the air intake flange 12; a left-end air intake branch corresponding to one end of the air intake flange 12 along the second horizontal direction D2; a right-end air intake branch corresponding to the other end of the air intake flange 12 along the second horizontal direction D2; a left-middle air intake branch located between the central air intake branch and the left-end air intake branch; and a right-middle air intake branch located between the central air intake branch and the right-end air intake branch. Five flow regulators 16 are correspondingly arranged in the central air intake branch, the left-end air intake branch, the right-end air intake branch, the left-middle air intake branch, and the right-middle air intake branch, respectively, to adjust the flow rate of the reactant gas in each of the following air intake branches: central air intake branch, left-end air intake branch, right-end air intake branch, left-middle air intake branch, and right-middle air intake branch. By setting up multiple flow regulators 16 that are connected one-to-one with the multiple air inlet branches 13, the flow rate of the reactant gas in the multiple air inlet branches 13 can be adjusted independently by the multiple flow regulators 16, thereby achieving precise compensation for the distribution of the reactant gas in the epitaxial growth chamber. For example, the multiple air inlet branches 13 correspond one-to-one with multiple chamber regions arranged along the second horizontal direction D2 in the epitaxial growth chamber 10, so that the concentration of the reactant gas in the corresponding chamber region can be precisely compensated by the flow regulators 16. This improves the consistency of the epitaxial layers grown on the surface of multiple wafers, while further simplifying the debugging operation to improve the uniformity of the reactant gas in the epitaxial growth chamber 10, which helps to further improve the productivity of the semiconductor multi-wafer epitaxial device.

[0028] In some embodiments, the semiconductor multi-wafer epitaxial device further includes: Multiple sensors are located within the epitaxial growth chamber 10, and the multiple sensors are used to detect the thickness of the epitaxial layer grown on the wafer surface within the multiple accommodating cavities 31 during the epitaxial growth process. A controller, connected to multiple sensors and multiple flow regulators 16, is used to control the multiple flow regulators 16 to adjust the flow rate of the reaction gas in multiple intake manifolds 13 based on the thickness of the epitaxial layer detected by the multiple sensors.

[0029] For example, during the epitaxial growth process, the thickness of the epitaxial layers formed in the multiple receiving cavities 31 of the epitaxial growth structure 11 can be collected in real time by multiple sensors, and the collected thicknesses of the multiple epitaxial layers are fed back to the controller. The controller analyzes the thicknesses of the multiple epitaxial layers to determine the uniformity of the thicknesses (e.g., whether the difference between the thicknesses of the multiple epitaxial layers is within a threshold range). If the thickness of a certain epitaxial layer is abnormal, a flow regulator 16 is controlled to adjust the flow rate of the reaction gas in the corresponding air intake branch pipe 13. For example, when the thickness of the epitaxial layer grown in the receiving cavity 31 near the left end of the epitaxial growth chamber 10 is too thin, the controller increases the flow rate of the reaction gas in the left end air intake branch pipe through a flow regulator 16. This specific embodiment forms a closed-loop feedback regulation mechanism through the sensor, the controller, and the flow regulator 16. This not only achieves automated regulation of the reactive gas distribution within the epitaxial growth chamber, improving the speed of regulation, but also enhances the accuracy and flexibility of regulation. It avoids the drawbacks of relying on subjective manual regulation, which not only helps to further improve the consistency of epitaxial layers grown on multiple wafer surfaces but also improves regulation efficiency while saving labor costs. In one example, the flow regulator 16 can be an automatic flow limiting valve.

[0030] Figure 4 This is a schematic diagram of the gas guiding component in a specific embodiment of the present invention. In some embodiments, the semiconductor multi-wafer epitaxy device further includes: Multiple gas guiding components are located within the epitaxial growth chamber 10 and connected to the inlet flange 12. Each of the multiple gas guiding components is connected to a corresponding inlet branch pipe 13. The gas guiding components are used to introduce the reaction gas in the corresponding inlet branch pipe 13 into the epitaxial growth chamber.

[0031] In some embodiments, the air guiding assembly includes: An air intake block seat 40 is connected to the air intake flange 12, and the air intake block seat 40 has a flow channel communicating with the air intake branch pipe 13; An air intake block 41 is located on the side of the air intake block seat 40 opposite to the air intake flange 12, and the air intake block 41 has a first positioning hole 43. An air intake cover 42 is located on the side of the air intake block 41 away from the air intake block seat 40. The air intake cover 42 has a second positioning hole 44 aligned with the first positioning hole 43. The air intake cover 42 and the air intake block 41 enclose an air cavity. One end of the air cavity is connected to the flow channel and the other end is connected to the epitaxial growth chamber 10. Pin 45 is inserted into the first positioning hole 43 and the second positioning hole 44.

[0032] For example, such as Figure 4 As shown, the air inlet block seat 40 is connected to the air inlet flange 12. The air inlet block seat 40 not only supports the air inlet block 41 and the air inlet cover plate 42, but also transmits the reaction gas from the corresponding air inlet branch pipe 13 to the flow channel through the air inlet flange 12. The air inlet block 41 is connected to the side of the air inlet block seat 40 away from the air inlet flange 12, and the air inlet cover plate 42 is connected to the side of the air inlet block seat 40 away from the air inlet flange 12. The air inlet cover plate 42 and the air inlet block 41 enclose a gas cavity, through which the reaction gas from the flow channel is transmitted to the epitaxial growth chamber 10. The pin 45 passes through the first positioning hole 43 and the second positioning hole 44 and is inserted into the air inlet block seat 40, thereby achieving positioning alignment between the air inlet cover plate 42, the air inlet block 41, and the air inlet block seat 40. This specific embodiment, by setting up multiple air guiding components that are connected one-to-one with the multiple air intake branches 13, can accurately guide the reaction gas transmitted by the air intake branches 13 to the corresponding cavity area within the epitaxial growth chamber 10. This further ensures accurate reaction gas compensation for the corresponding cavity area within the epitaxial growth chamber 10, avoiding inaccurate compensation due to gas leakage or transmission path deviation when the reaction gas is transmitted from the air intake flange 12 to the epitaxial growth chamber 10.

[0033] In some embodiments, such as Figure 4 As shown, the air guiding assembly further includes: A sealing groove 47 is located between the air intake cover plate 42 and the air intake block 41. The first positioning hole 43 is aligned with the sealing groove 47. The pin 45 passes through the sealing groove 47 and is inserted into the first positioning hole 43. The cross-section of the sealing groove 47 is rectangular. The pin sealing ring 46 is located within the sealing groove 47 and is distributed around the outer periphery of the pin 45.

[0034] Specifically, the surface of the air intake cover 42 facing the air intake block 41 has a rectangular first recess, and the surface of the air intake block 41 facing the air intake cover 42 has a rectangular second recess. The first recess and the second recess together form the sealing groove 47. In one example, the width of the second recess is greater than the width of the first recess. The pin sealing ring 46 is distributed around the outer periphery of the pin 45 and located within the sealing groove 47 to prevent the reaction gas from leaking along the gap between the air intake cover 42 and the air intake block 41. Setting the overall cross-section of the sealing groove 47 to be rectangular avoids the problem of uneven sealing caused by uneven force on the sealing ring in traditional beveled trapezoidal sealing grooves, thereby improving the sealing performance of the pin sealing ring 46. Moreover, compared with traditional beveled trapezoidal sealing grooves, the rectangular sealing groove 47 in this specific embodiment has a simple processing technology and high manufacturing precision, which helps to further improve the accuracy of gas path compensation.

[0035] In some embodiments, the semiconductor multi-wafer epitaxial device further includes: A drive structure is connected to the pin 45 for driving the pin 45 to move axially and radially.

[0036] In some embodiments, the plurality of drive structures are connected one-to-one with the pins 45 in the plurality of air guide assemblies; The controller is connected to multiple drive structures and is used to control the multiple drive structures to drive the corresponding pins 45 to move according to the thickness of the epitaxial layer detected by multiple sensors.

[0037] Specifically, the controller analyzes the thickness of multiple epitaxial layers to determine the uniformity of the thickness of the multiple epitaxial layers (e.g., whether the difference between the thicknesses of the multiple epitaxial layers is within a threshold range). If the thickness of a certain epitaxial layer is abnormal, the controller controls a flow regulator 16 to adjust the flow rate of the reaction gas in the corresponding intake branch pipe 13, or drives the pin 45 to move along its axial direction (i.e., the axial direction of the pin 45) and radial direction (i.e., the radial direction of the pin 45) through the drive structure. This improves the positioning accuracy between the intake cover plate 42, the intake block 41 and the intake block seat 40 in the air guide assembly, optimizes the air path sealing effect in the air guide assembly, and avoids turbulence problems caused by poor air path sealing effect. For example, when the thickness of the epitaxial layer grown in the receiving cavity 31 near the left end of the epitaxial growth chamber 10 is too thin, the controller increases the flow rate of the reaction gas in the left end air intake branch pipe or adjusts the position of the pin 45 in the air guide assembly corresponding to the left end air intake branch pipe through a flow regulator 16.

[0038] The semiconductor multi-wafer epitaxial device provided in this specific embodiment has an air intake structure connected to an air intake flange outside the epitaxial growth chamber. The air intake structure includes multiple air intake branches spaced apart along a second horizontal direction. The air intake branches are used to transmit the reactive gas to the epitaxial growth chamber through the air intake flange. The number of air intake branches is more than four. The more than four air intake branches can achieve fine adjustment of the distribution of the reactive gas in the epitaxial growth chamber, offset flow field deviations, and achieve uniform transition of the reactive gas concentration between different regions in the epitaxial growth chamber. This improves the uniformity of the reactive gas distribution in the epitaxial growth chamber, making the reactive gas distribution in multiple cavities within the epitaxial growth structure more uniform and consistent. This improves the consistency of the epitaxial layer grown on the surface of multiple wafers, reduces debugging operations, and lowers the probability of introducing impurities during debugging. Thus, while ensuring the production yield of the semiconductor multi-wafer epitaxial device, it also increases the production capacity of the semiconductor multi-wafer epitaxial device.

[0039] It should be noted that the terms "comprising" and "having," and their variations, used in this utility model document are intended to cover non-exclusive inclusion. The terms "first," "second," etc., are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence, unless explicitly indicated by the context; it should be understood that such use of data can be interchanged where appropriate. The term "one or more" depends at least in part on the context and can be used to describe features, structures, or characteristics in a singular sense, or in a plural sense to describe combinations of features, structures, or characteristics. The term "based on" can be understood as not necessarily intended to express an exclusive set of factors, but can instead, also at least in part on the context, allow for the presence of other factors that are not necessarily explicitly described. Furthermore, embodiments and features in embodiments of this utility model can be combined with each other without conflict. In addition, descriptions of well-known components and technologies have been omitted in the above description to avoid unnecessarily obscuring the concepts of this utility model. In the various embodiments described above, each embodiment focuses on the differences from other embodiments; similar / identical parts between embodiments can be referred to mutually.

[0040] The above description is only a preferred embodiment of the present utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present utility model, and these improvements and modifications should also be considered within the protection scope of the present utility model.

Claims

1. A semiconductor multi-wafer epitaxy device, characterized in that, include: Epitaxial growth chamber; An epitaxial growth structure, located within the epitaxial growth chamber, includes multiple spaced-apart cavities for accommodating wafers; An air inlet flange is located within the epitaxial growth chamber, and the air inlet flange is located on one side of the epitaxial growth structure along a first horizontal direction; An air intake structure is located outside the epitaxial growth chamber and communicates with the air intake flange. The air intake structure includes a plurality of air intake branches arranged at intervals along a second horizontal direction. The air intake branches are used to transmit reaction gas to the epitaxial growth chamber through the air intake flange. The number of air intake branches is more than four, and the first horizontal direction intersects the second horizontal direction perpendicularly.

2. The semiconductor multi-wafer epitaxial device according to claim 1, characterized in that, The number of intake manifolds is 5.

3. The semiconductor multi-wafer epitaxial device according to claim 2, characterized in that, One of the intake branch pipes is connected to the middle of the intake flange, serving as a middle intake branch pipe; The other two intake branch pipes are connected to the two opposite ends of the intake flange along the second horizontal direction, serving as the left intake branch pipe and the right intake branch pipe respectively. The left intake branch pipe and the right intake branch pipe are symmetrically distributed on opposite sides of the middle intake branch pipe. One of the intake branches located between the middle intake branch and the left end intake branch is designated as the left middle intake branch, and the other of the intake branches located between the middle intake branch and the right end intake branch is designated as the right middle intake branch.

4. The semiconductor multi-wafer epitaxy apparatus according to claim 3, characterized in that, Also includes: Multiple flow regulators are connected one-to-one with multiple intake manifolds, and each flow regulator is used to independently adjust the flow rate of the reaction gas in the intake manifold to which it is connected.

5. The semiconductor multi-wafer epitaxy apparatus according to claim 4, characterized in that, Also includes: Multiple sensors are located within the epitaxial growth chamber, and the multiple sensors are used to detect the thickness of the epitaxial layer grown on the wafer surface in the multiple accommodating chambers during the epitaxial growth process; A controller, connected to multiple sensors and multiple flow regulators, is used to control the multiple flow regulators to adjust the flow rate of the reactant gas in multiple intake manifolds based on the thickness of the epitaxial layer detected by the multiple sensors.

6. The semiconductor multi-wafer epitaxy apparatus according to claim 5, characterized in that, Also includes: Multiple gas guiding components are located in the epitaxial growth chamber and connected to the gas inlet flange. Each of the multiple gas guiding components is connected to a corresponding gas inlet branch pipe. The gas guiding components are used to introduce the reaction gas in the corresponding gas inlet branch pipe into the epitaxial growth chamber.

7. The semiconductor multi-wafer epitaxy apparatus according to claim 6, characterized in that, The air guiding assembly includes: An air intake block seat is connected to the air intake flange, and the air intake block seat has a flow channel communicating with the air intake branch pipe; An air intake block is located on the side of the air intake block seat opposite to the air intake flange, and the air intake block has a first positioning hole; An air intake cover is located on the side of the air intake block away from the air intake block seat. The air intake cover has a second positioning hole aligned with the first positioning hole. The air intake cover and the air intake block enclose an air cavity. One end of the air cavity is connected to the flow channel, and the other end is connected to the epitaxial growth chamber. The pin is inserted into the first positioning hole and the second positioning hole.

8. The semiconductor multi-wafer epitaxy apparatus according to claim 7, characterized in that, The air guiding assembly also includes: A sealing groove is located between the air intake cover and the air intake block. The first positioning hole is aligned with the sealing groove. The pin passes through the sealing groove and is inserted into the first positioning hole. The cross-section of the sealing groove is rectangular. The pin sealing ring is located within the sealing groove and is distributed around the outer periphery of the pin.

9. The semiconductor multi-wafer epitaxy apparatus according to claim 7, characterized in that, Also includes: A drive structure, connected to the pin, is used to drive the pin to move axially and radially.

10. The semiconductor multi-wafer epitaxial device according to claim 9, characterized in that, Each of the driving structures is connected to a pin in a one-to-one correspondence with one of the air guide assemblies. The controller is connected to multiple drive structures and is used to control the multiple drive structures to drive the corresponding pins to move according to the thickness of the epitaxial layer detected by multiple sensors.

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