A dual-chamber combustion water washing device for semiconductor exhaust gas treatment

Abstract

This utility model discloses a dual-chamber combustion and water washing device for semiconductor exhaust gas treatment, including a dual-chamber combustion mechanism and a water washing spray tower. The dual-chamber combustion mechanism includes a merging pipe connected to the inlet of the water washing spray tower, and the merging pipe is located on one side of the dual-chamber combustion furnace. A diverter pipe is installed on the other side of the dual-chamber combustion furnace, and a semiconductor exhaust gas inlet pipe is provided at the end of the diverter pipe. A combustion chamber A is opened on one side of the interior of the dual-chamber combustion furnace, and a combustion chamber B is opened on the other side of the interior of the dual-chamber combustion furnace. Burners are installed on one side of both combustion chamber B and combustion chamber A. This dual-chamber combustion and water washing device for semiconductor exhaust gas treatment captures dust and causes it to settle with the water flow, while neutralizing acidic substances. The final qualified flue gas is discharged through the exhaust port, and the washing wastewater enters the subsequent treatment system. It achieves secondary deep purification through combustion decomposition of harmful components and water washing removal of residual impurities, ensuring that the final emission flue gas meets the standards.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor exhaust gas treatment, specifically a dual-chamber combustion and water washing device for semiconductor exhaust gas treatment. Background Technology

[0002] Semiconductor exhaust gases are complex in composition and are toxic and flammable; therefore, they need to be treated by exhaust gas treatment equipment before being emitted. Regarding patents related to semiconductor exhaust gas treatment, a search revealed Chinese patent CN117771842A, which discloses a gas treatment structure and its application for an exhaust gas system of semiconductor epitaxial equipment. The patent includes an exhaust gas filter canister comprising a first canister and a second canister. The first canister includes an exhaust gas inlet, a conical end cap, a refrigerant inlet and outlet, a cooling coil, a central tube, and an outer cylinder. The exhaust gas inlet and the refrigerant inlet and outlet are respectively located on the conical end cap. The cooling coil is located within the outer cylinder. Although the above-mentioned device can rationally design the exhaust gas filter canister and parallel dual phosphorus trap to maximize the utilization of the internal space of the original MOCVD machine, in actual use, silanes and VOCs in the semiconductor exhaust gas exist in the form of gas molecules or vapors in the semiconductor exhaust gas, which cannot be intercepted by the exhaust gas filter canister and are released into the air, causing damage to the local environment. Utility Model Content

[0003] The purpose of this invention is to provide a dual-chamber combustion water washing device for semiconductor exhaust gas treatment, so as to solve the problems mentioned in the background art.

[0004] To achieve the above objectives, a dual-chamber combustion and water washing device for semiconductor exhaust gas treatment is provided, comprising a dual-chamber combustion mechanism and a water washing spray tower. The dual-chamber combustion mechanism includes a merging pipe connected to the inlet of the water washing spray tower, and the merging pipe is located on one side of the dual-chamber combustion furnace. A branch pipe is installed on the other side of the dual-chamber combustion furnace, and a semiconductor exhaust gas inlet pipe is provided at the end of the branch pipe. A combustion chamber A is opened on one side of the interior of the dual-chamber combustion furnace, and a combustion chamber B is opened on the other side of the interior of the dual-chamber combustion furnace. Burners are installed on one side of both combustion chamber B and combustion chamber A.

[0005] Furthermore, both the diverter pipe and the merging pipe are Y-shaped, and the semiconductor exhaust gas inlet pipe is connected to the interior of the water washing spray tower through the diverter pipe, the dual-chamber combustion furnace, and the merging pipe.

[0006] Furthermore, a flame-spraying pipe is installed at the end of the burner, and the end of the flame-spraying pipe is inserted into the combustion chamber A and combustion chamber B in an inclined state, with the angle between the flame-spraying pipe and the side wall of the dual-chamber combustion furnace being 45 degrees.

[0007] Furthermore, the dual-chamber combustion mechanism also includes a support base and a pretreatment device. The support base is located at the bottom of the dual-chamber combustion furnace and is U-shaped.

[0008] Furthermore, the pretreatment device is provided with a smoke inlet box fixed to the surface of the dual-chamber combustion furnace. A separation frame is inserted inside the smoke inlet box, and its surface is covered with a sealing gasket. At the same time, a sealing cover is provided on the sealing gasket, and a diversion pipe is fixed to the sealing cover.

[0009] Furthermore, the pretreatment device also includes a filter plate, a positioning seat, a positioning groove, and a support platform. The filter plate is located at the bottom of the separation frame, and positioning seats are installed on both sides of the separation frame. The positioning seats are inserted into the positioning grooves located on the inner wall of the smoke inlet box. Both the positioning seats and the positioning grooves are dovetail-shaped.

[0010] Furthermore, the support platform is located inside the smoke inlet box, and the size of the support platform is adapted to the size of the separation frame, with the separation frame inserted into the support platform.

[0011] Compared with the prior art, the beneficial effects of this utility model are: 1. This solution uses a burner to perform preliminary combustion of the flue gas inside combustion chambers A and B. The combusted flue gas then enters the water-washing spray tower through a confluence pipe. The spraying device inside the tower provides secondary treatment. During this combustion and spraying process: the burner heats the exhaust gas, causing the combustible and harmful components to be fully oxidized and decomposed into CO2, H2O, and SiO2. Subsequently, dust particles such as SiO2 and acidic impurities are washed inside the water-washing spray tower. This process captures dust and causes it to settle with the water flow, while neutralizing acidic substances. Finally, the compliant flue gas is discharged through the exhaust port, and the washing wastewater enters the subsequent treatment system. This achieves secondary deep purification through combustion decomposition of harmful components and water washing removal of residual impurities, ensuring that the final emitted flue gas meets emission standards. 2. In this scheme, the flue gas enters the Y-shaped diversion pipe through the semiconductor tail gas inlet pipe and is divided into two groups, which then enter the combustion chamber A and combustion chamber B of the dual-chamber combustion furnace in sequence. The dual-chamber diversion design can avoid the problems of excessively high flue gas concentration and excessively high flow rate when treated by a single chamber, allowing each group of flue gas to have a more sufficient residence time in combustion chamber A and combustion chamber B. Combined with the synchronous preliminary combustion of the flue gas in the two chambers by the burner, it can more fully oxidize and decompose combustible and harmful components such as silanes and VOCs in the tail gas, reduce the residue of unburned substances, improve combustion efficiency, and reduce the safety risk of high concentration of combustible gas accumulation. Attached Figure Description

[0012] Figure 1 This is a front view schematic diagram of the structure of this utility model; Figure 2This is a schematic diagram of the pretreatment device for the structure of this utility model; Figure 3 This is a bottom view of the structure of this utility model; Figure 4 This is a top view of the structure of this utility model; Figure 5 This is a schematic diagram of the dual-chamber combustion furnace structure of this utility model; Figure 6 This is a cross-sectional view of the dual-chamber combustion furnace of this utility model.

[0013] The diagram is labeled as follows: 100, Dual-chamber combustion mechanism; 1, Dual-chamber combustion furnace; 11, Combustion chamber A; 12, Combustion chamber B; 2, Support base; 3, Burner; 31, Flame pipe; 4, Semiconductor exhaust gas inlet pipe; 5, Diverter pipe; 6, Pretreatment device; 60, Sealing cover; 61, Sealing gasket; 62, Separation frame; 63, Filter plate; 64, Positioning seat; 65, Smoke inlet box; 66, Positioning groove; 67, Support platform; 7, Combination pipe; 200, Water washing spray tower. Detailed Implementation

[0014] Please see Figure 1-6 This utility model provides a dual-chamber combustion and water washing device for semiconductor exhaust gas treatment, including a dual-chamber combustion mechanism 100 and a water washing spray tower 200. The dual-chamber combustion mechanism 100 includes a confluence pipe 7 connected to the inlet of the water washing spray tower 200, and the confluence pipe 7 is located on one side of the dual-chamber combustion furnace 1. A diversion pipe 5 is installed on the other side of the dual-chamber combustion furnace 1, and a semiconductor exhaust gas inlet pipe 4 is provided at the end of the diversion pipe 5. A combustion chamber A11 is opened on one side of the interior of the dual-chamber combustion furnace 1, and a combustion chamber B12 is opened on the other side of the interior of the dual-chamber combustion furnace 1. A burner 3 is installed on one side of both the combustion chamber B12 and the combustion chamber A11.

[0015] Both the diverter pipe 5 and the merging pipe 7 are Y-shaped. The semiconductor exhaust gas inlet pipe 4 is connected to the interior of the water washing spray tower 200 through the diverter pipe 5, the dual-chamber combustion furnace 1, and the merging pipe 7.

[0016] Working Principle: In actual use, flue gas enters the interior of the diversion pipe 5 from the semiconductor tail gas inlet pipe 4, and is then diverted by the Y-shaped diversion pipe 5, causing the flue gas to be divided into two groups that sequentially enter the combustion chambers A11 and B12 inside the dual-chamber combustion furnace 1. At this point, the burner 3 is activated, and through the burner 3, the flue gas inside combustion chambers A11 and B12 undergoes preliminary combustion. After combustion, the flue gas enters the interior of the water washing spray tower 200 through the confluence pipe 7. The water washing spray tower 200 then performs secondary treatment on the flue gas through its spraying device. This combustion and spraying process... During the process: the exhaust gas is heated to a high temperature of 800-1200℃ by burner 3, causing the combustible and harmful components, such as silanes and VOCs, to be fully oxidized and decomposed into CO2, H2O and SiO2. Subsequently, the flue gas containing dust such as SiO2 particles and acidic impurities such as HF and HCl enters the water washing chamber inside the water washing spray tower 200. Through the washing action of the circulating spray water, the dust is captured and settled with the water flow, and the acidic substances are neutralized. Finally, the qualified flue gas is discharged through the exhaust port, and the washing wastewater enters the subsequent treatment system. This achieves efficient treatment of semiconductor flue gas and avoids environmental pollution.

[0017] In a preferred embodiment, a flame pipe 31 is installed at the end of the burner 3, and the end of the flame pipe 31 is inserted into the combustion chamber A11 and the combustion chamber B12 in an inclined state. The angle between the flame pipe 31 and the side wall of the dual-chamber combustion furnace 1 is 45 degrees.

[0018] like Figure 1 and Figure 5-6 As shown: The burner 3's end flame tube is inserted into combustion chambers A11 and B12 at a 45-degree angle. This angle design allows the flame to form an oblique convection with the flue gas entering from the diversion pipe 5, enhancing the airflow disturbance in the chamber and prolonging the residence time of the flue gas in combustion chambers A11 and B12. This allows combustible components such as silanes and VOCs to fully contact the flame and burn completely. At the same time, the 45-degree angle avoids the flame directly impacting the side wall of the dual-chamber combustion furnace 1 vertically, reducing the damage to the furnace body caused by local high temperatures. It also allows the flame to form a more uniform temperature field in the chamber, ensuring that the flue gas after the two diversions receives stable and efficient preliminary combustion treatment in combustion chambers A11 and B12. This lays a good foundation for the secondary treatment in the water washing spray tower 200 after the subsequent confluence pipe 7 enters.

[0019] The dual-chamber combustion mechanism 100 also includes a support base 2 and a pretreatment device 6. The support base 2 is located at the bottom of the dual-chamber combustion furnace 1 and is U-shaped.

[0020] In a preferred embodiment, the pretreatment device 6 is provided with a smoke inlet box 65 fixed to the surface of the dual-chamber combustion furnace 1. A separation frame 62 is inserted inside the smoke inlet box 65, and its surface is covered with a sealing gasket 61. At the same time, a sealing cover 60 is provided on the sealing gasket 61, and a diversion pipe 5 is fixed to the sealing cover 60.

[0021] The pretreatment device 6 also includes a filter plate 63, a positioning seat 64, a positioning groove 66, and a support 67. The filter plate 63 is located at the bottom of the separation frame 62, and the positioning seat 64 is installed on both sides of the separation frame 62. The positioning seat 64 is inserted into the positioning groove 66 located on the inner wall of the smoke inlet box 65. Both the positioning seat 64 and the positioning groove 66 are dovetail shaped.

[0022] The support platform 67 is located inside the smoke inlet box 65, and the size of the support platform 67 is adapted to the size of the separation frame 62, which is inserted through the support platform 67.

[0023] like Figure 1-2 As shown: Before entering the dual-chamber combustion mechanism 100, the flue gas is first treated by the pretreatment device 6. The flue gas inlet box 65 is fixed to the surface of the dual-chamber combustion furnace 1 to ensure the stability of the overall structure. The filter plate 63 at the bottom of the internal separation frame 62 can pre-filter solid impurities such as dust in the flue gas to prevent them from entering the combustion chamber A11 and combustion chamber B12 and affecting the combustion efficiency. The dovetail-shaped positioning seats 64 on both sides of the separation frame 62 are inserted into the dovetail-shaped positioning grooves 66 on the inner wall of the flue gas inlet box 65, which not only achieves the stable installation of the separation frame 62, but also facilitates quick disassembly and assembly for cleaning or replacement of the filter plate 63, making maintenance convenient. The sealing gasket 61 and the sealing cover 60 cooperate to ensure the sealing of the flue gas inlet box 65 and prevent flue gas leakage. The diversion pipe 5 fixed on the sealing cover 60 ensures the smooth transition of flue gas from pretreatment to diversion. The overall design takes into account pretreatment purification, structural stability, reliable sealing and convenient maintenance, providing clean and stable flue gas conditions for subsequent dual-chamber combustion treatment.

[0024] like Figure 1-4As shown: After the flue gas enters the Y-shaped diversion pipe 5 through the semiconductor exhaust gas inlet pipe 4, it is divided into two groups and enters the combustion chambers A11 and B12 of the dual-chamber combustion furnace 1 in sequence. The dual-chamber diversion design can avoid the problems of excessively high flue gas concentration and excessively high flow rate when treated by a single chamber, allowing each group of flue gas to have a more sufficient residence time in the combustion chambers A11 and B12. Combined with the synchronous preliminary combustion of the flue gas in the two chambers by the burner 3, it can more fully oxidize and decompose combustible and harmful components such as silanes and VOCs in the exhaust gas, reduce the residue of unburned substances, improve combustion efficiency, and reduce emissions. Safety risks associated with the accumulation of low-to-high concentration combustible gases; the combustion chambers A11 and B12 of the dual-chamber combustion furnace 1 can form a parallel processing mode. Even if one chamber requires brief maintenance, the other chamber can still receive flue gas and continue combustion through the diversion pipe 5, avoiding interruption of semiconductor exhaust gas emissions due to equipment shutdown, and adapting to the continuous process requirements of semiconductor production. This technical content requires the installation of valves on the branch pipes of the diversion pipe 5; the diversion function of the diversion pipe 5 can also stabilize the flue gas flow rate and pressure entering the two chambers, avoid fluctuations in combustion conditions, and further ensure combustion stability; To simplify subsequent processing and improve final purification, the flue gas after combustion in combustion chambers A11 and B12 is uniformly fed into the water washing spray tower 200 through the confluence pipe 7. This eliminates the need for separate water washing systems for the two chambers, simplifying equipment layout and reducing costs. It also facilitates the control of spray volume and spray liquid concentration by the spray device inside the water washing spray tower 200, capturing SiO2 dust generated during combustion and neutralizing residual acidic substances. This achieves secondary deep purification by decomposing harmful components through combustion and removing residual impurities through water washing, ensuring that the final emission flue gas meets standards.

Claims

1. A dual-chamber combustion and water washing device for semiconductor exhaust gas treatment, comprising a dual-chamber combustion mechanism (100) and a water washing spray tower (200), characterized in that: The dual-cavity combustion mechanism (100) includes a merging pipe (7) connected to the inlet of the water washing spray tower (200), and the merging pipe (7) is located on one side of the dual-cavity combustion furnace (1). A branch pipe (5) is installed on the other side of the dual-cavity combustion furnace (1), and a semiconductor tail gas inlet pipe (4) is provided at the end of the branch pipe (5). A combustion chamber A (11) is opened on one side of the interior of the dual-cavity combustion furnace (1), and a combustion chamber B (12) is opened on the other side of the interior of the dual-cavity combustion furnace (1). A burner (3) is installed on one side of both the combustion chamber B (12) and the combustion chamber A (11).

2. The dual-chamber combustion and water washing device for semiconductor exhaust gas treatment according to claim 1, characterized in that: Both the diverter pipe (5) and the merging pipe (7) are Y-shaped. The semiconductor exhaust gas inlet pipe (4) is connected to the interior of the water washing spray tower (200) through the diverter pipe (5), the dual-chamber combustion furnace (1), and the merging pipe (7).

3. The dual-chamber combustion and water washing device for semiconductor exhaust gas treatment according to claim 1, characterized in that: The burner (3) is equipped with a flame pipe (31) at its end, and the end of the flame pipe (31) is inserted into the combustion chamber A (11) and combustion chamber B (12) in an inclined state. The angle between the flame pipe (31) and the side wall of the dual-chamber combustion furnace (1) is 45 degrees.

4. The dual-chamber combustion and water washing device for semiconductor exhaust gas treatment according to claim 3, characterized in that: The dual-chamber combustion mechanism (100) also includes a support base (2) and a pretreatment device (6). The support base (2) is located at the bottom of the dual-chamber combustion furnace (1) and is U-shaped.

5. The dual-chamber combustion and washing device for semiconductor exhaust gas treatment according to claim 4, characterized in that: The pretreatment device (6) is provided with a smoke inlet box (65) fixed to the surface of the dual-chamber combustion furnace (1). A separation frame (62) is inserted inside the smoke inlet box (65), and its surface is covered with a sealing gasket (61). At the same time, a sealing cover (60) is provided on the sealing gasket (61), and a diversion pipe (5) is fixed to the sealing cover (60).

6. The dual-chamber combustion and washing device for semiconductor exhaust gas treatment according to claim 5, characterized in that: The pretreatment device (6) also includes a filter plate (63), a positioning seat (64), a positioning groove (66), and a support (67). The filter plate (63) is located at the bottom of the separation frame (62), and positioning seats (64) are installed on both sides of the separation frame (62). The positioning seats (64) are inserted into the positioning groove (66) on the inner wall of the smoke inlet box (65). Both the positioning seats (64) and the positioning groove (66) are dovetail-shaped.

7. The dual-chamber combustion and washing device for semiconductor exhaust gas treatment according to claim 6, characterized in that: The support platform (67) is located inside the smoke inlet box (65), and the size of the support platform (67) is compatible with that of the separation frame (62), with the separation frame (62) inserted on the support platform (67).

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