Uncooled infrared detector pixels, chips, mechanisms, and equipment

Abstract

This disclosure relates to the field of infrared detection technology, and more particularly to an uncooled infrared detection pixel, chip, core, and device. The pixel includes a first interconnect structure and a second interconnect structure. The first interconnect structure includes a first connecting portion, a first copper connecting portion, a second copper connecting portion, and a beam structure. The second interconnect structure includes a third copper connecting portion, a fourth copper connecting portion, a fifth copper connecting portion, and an absorption sensing portion. In the first interconnect structure, the first copper connecting portion connects the first connecting portion and the second copper connecting portion, the first connecting portion connects to a readout circuit, and the second copper connecting portion connects to the beam structure. In the second interconnect structure, the fourth copper connecting portion connects the third copper connecting portion and the fifth copper connecting portion, the third copper connecting portion connects to the beam structure, and the fifth copper connecting portion connects to the absorption sensing portion. At least the second copper connecting portion and the third copper connecting portion are located on the side of the beam structure facing the readout circuit. The beam structure is on a flat plane, and the thickness of the amorphous silicon thermistor layer of the absorption sensing portion is locally thinned.

Description

Technical Field

[0001] This disclosure relates to the field of infrared detection technology, and in particular to an uncooled infrared detection pixel, chip, mechanism, and device. Background Technology

[0002] Infrared detection is a technology that uses the infrared radiation emitted or reflected by objects to detect, identify, and locate them. Uncooled infrared detection equipment is a device that uses the infrared radiation characteristics of objects for detection and can operate without a cooling system. Specifically, uncooled infrared detection equipment mainly works based on the principle of thermal effect. When an infrared signal shines on the sensitive element of the detector, such as a detection chip, the detection chip changes its own physical parameters based on the infrared signal, converts it into an electrical signal, and then reads it out through circuitry and performs subsequent processing to ultimately detect and image the infrared signal.

[0003] In related technologies, infrared detection pixels often employ a hollow columnar structure of single-layer metal as the interconnect structure to connect the readout circuit and the infrared sensing structure, achieving both electrical connection and mechanical support. A single-layer metal interconnect structure (such as patent CN202110138398.5) is shown below. Figure 20 The microbridge pillar 7 shown is formed by etching through-holes in the sacrificial layer 9 and then filling them with a metal layer 4 to create a hollow pillar structure. The defects of this process include:

[0004] 1) Through-holes formed by etching may have residual media due to incomplete removal during the etching, resist removal, and cleaning processes (e.g.) Figure 20 The outer side of the dielectric layer 3 and the sacrificial layer 9 at the location of the micro-bridge pillar 7 and the bottom of the reflective layer are in contact, and the residual condition of each via is not the same, making it difficult to ensure process consistency; at the same time, the temporarily retained particles will have a great impact on the noise of the pixel, so it will lead to unstable pixel noise. Pixels with relatively clean residual particles will have low noise, while pixels with incomplete residual particle removal will have high noise, so the noise consistency between pixels will be poor.

[0005] 2) The metal layer 4 inside the through hole has poor coverage, which may lead to the risk of electrical connection breakage; and the step coverage will vary, resulting in poor process consistency and resistance consistency.

[0006] 3) Through-hole processing requires two photolithography etching steps to form ( Figure 20At the bottom of the contact between the dielectric layer 3 and the metal layer 4 at the position of the micro-bridge pillar 7 and the reflective layer, the two via processes have high requirements for photolithography overlay and there is a risk of large overlay deviation. The resulting two vias have inconsistent positions and sizes, different areas and shapes of filling metal, and different interface characteristics with the readout circuit, resulting in poor consistency of contact resistance. Moreover, the two via processes mean that the size of the interconnect structure will inevitably not be too small, making it difficult to design small-sized pixels.

[0007] 4) Hollow columnar structure ( Figure 20 The design of the micro-bridge pillar 7) will result in an uneven surface during the fabrication process. Strict process control is required in the series of processes such as film growth, coating, photolithography, etching and cleaning. The process requirements are quite stringent.

[0008] 5) For infrared detector pixels with multi-layer structures, i.e., beam structures and absorption sensing parts with different or multiple layers of beam structures and absorption sensing parts, chemical mechanical polishing (CMP) is used to make the surface flat. However, in the design of hollow columnar structures, the hollow structure makes CMP more difficult and the surface flatness varies.

[0009] 6) Currently, the sacrificial layer 9 of traditional hollow columnar interconnect structures all adopt polyimide (PI) technology. The planarization process is not mature, making it difficult to accurately control the thickness of the sacrificial layer, which may deviate from the design requirements.

[0010] 7) There will be differences between the individual pixels made of hollow columnar structure, resulting in poor consistency of the entire infrared detection chip and greatly affecting the detection performance; at the same time, there will be differences between each chip and each wafer produced in batches, making it difficult to guarantee process stability and repeatability, and making it difficult to achieve large-scale mass production.

[0011] 8) Chips made from hollow columnar structures have a low yield and high processing costs.

[0012] Furthermore, in related technologies, uncooled infrared detection devices can use amorphous silicon as the thermosensitive layer. However, the 1 / f noise of this amorphous silicon-based infrared detection device is relatively high, mainly due to the noise of the amorphous silicon thermosensitive layer material. Because amorphous silicon is a semiconductor material, the thicker the layer, the more conductive channels it corresponds to. Since amorphous silicon is a thermosensitive material, temperature changes cause fluctuations in the conductivity at the contact points between the conductive channels. These fluctuations in conductivity at the contact points create 1 / f noise. The thicker the amorphous silicon layer, the more pronounced the contact point fluctuations, resulting in greater 1 / f noise and poorer device performance. Utility Model Content

[0013] In order to solve the above-mentioned technical problems, or at least partially solve the above-mentioned technical problems, this disclosure provides an uncooled infrared detection pixel, chip, mechanism, and device.

[0014] This disclosure provides an uncooled infrared detection pixel, including a first interconnection structure and a second interconnection structure, wherein the first interconnection structure connects the second interconnection structure and a readout circuit;

[0015] The first interconnection structure includes: a first connecting part, a first copper connecting part, a second copper connecting part, and a beam structure; the second interconnection structure includes a third copper connecting part, a fourth copper connecting part, a fifth copper connecting part, and an absorption sensing part.

[0016] In the first interconnection structure, the two ends of the first copper connection are respectively connected to the first connection and the second copper connection, the first connection is connected to the readout circuit, and the second copper connection is connected to the beam structure;

[0017] In the second interconnection structure, the two ends of the fourth copper connection are respectively connected to the third copper connection and the fifth copper connection. The third copper connection is connected to the beam structure, and the fifth copper connection is connected to the absorption sensing part.

[0018] Wherein, at least the second copper connection portion and the third copper connection portion are located on the side of the beam structure facing the readout circuit, and the beam structure is on a flat plane;

[0019] The absorption sensing unit includes an amorphous silicon thermistor layer and a first metal layer; the first metal layer is located on the side of the amorphous silicon thermistor layer away from the readout circuit and is connected to the fifth copper connection portion.

[0020] The amorphous silicon thermistor layer includes a thermistor working area and a non-thermistor working area. The thermistor working area has a first thickness, and the non-thermistor working area has a second thickness. The first thickness is greater than the second thickness. The thermistor working area generates a resistance change in response to a received thermal signal.

[0021] The first metal layer is in contact with the non-thermal working area and at least with the side of the thermal working area; wherein, a pair of adjacent first metal layers located on the side of the thermal working area form quasi-parallel electrodes.

[0022] This disclosure also provides an uncooled infrared detection chip, including an array structure composed of multiple uncooled infrared detector pixels as described above and a readout circuit.

[0023] This disclosure also provides an uncooled infrared detection mechanism, which includes any of the above-mentioned uncooled infrared detection chips; the mechanism also includes a lens for focusing infrared signals onto the uncooled infrared detection chip.

[0024] This disclosure also provides an uncooled infrared detection device, which includes any of the aforementioned mechanisms.

[0025] The technical solution provided in this disclosure has the following advantages compared with the prior art:

[0026] In the uncooled infrared detection pixel, chip, core, and device provided in this disclosure, the uncooled infrared detection pixel includes a first interconnect structure and a second interconnect structure. The first interconnect structure connects the second interconnect structure and the readout circuit. The first interconnect structure includes a first connecting portion, a first copper connecting portion, a second copper connecting portion, and a beam structure. The second interconnect structure includes a third copper connecting portion, a fourth copper connecting portion, a fifth copper connecting portion, and an absorption sensing portion. In the first interconnect structure, the two ends of the first copper connecting portion are respectively connected to the first connecting portion and the second copper connecting portion. The first connecting portion is connected to the readout circuit, and the second copper connecting portion is connected to the beam structure. In the second interconnect structure, the two ends of the fourth copper connecting portion are respectively connected to the third copper connecting portion and the fifth copper connecting portion. The third copper connecting portion is connected to the beam structure, and the fifth copper connecting portion is connected to the absorption sensing portion. At least the second copper connecting portion and the third copper connecting portion are located on the side of the beam structure facing the readout circuit, and the beam structure is on a flat plane. Therefore, by setting the aforementioned first and second interconnect structures, the connection between the readout circuit and the absorption sensing unit is achieved. Compared with the traditional hollow columnar structure using a single-layer metal as the interconnect, the fabrication process of the interconnect structure in the uncooled infrared detector pixel provided in this disclosure is mature, has good process stability, and avoids noise instability caused by residual particles, resulting in good noise consistency. Simultaneously, it avoids poor electrical contact caused by high steps, resulting in low contact resistance and good uniformity. Furthermore, the planarization process is mature and stable, perfectly meeting design requirements. Moreover, the interconnect structure size can be made very small, enabling smaller pixel designs. Further, the infrared detector chip formed by the infrared detector pixel including this interconnect structure... The consistency between different pixels is good, and the performance is stable. Furthermore, the interconnect process enables efficient and low-cost production, so the infrared detection chip can achieve the goal of low processing cost, high yield, and mass production. In addition, the absorption sensing part includes an amorphous silicon thermistor layer and a first metal layer. The amorphous silicon thermistor layer includes a thermistor working area and a non-thermistor working area. The thermistor working area has a first thickness, and the non-thermistor working area has a second thickness, the first thickness being greater than the second thickness. The thermistor working area generates a resistance change in response to the received thermal signal. The first metal layer is in contact with the non-thermistor working area and at least in contact with the side of the thermistor working area. Adjacent pairs of first metal layers located on the side of the thermistor working area form quasi-parallel electrodes. Therefore, by setting the first thickness of the amorphous silicon thermistor layer in the thermistor working region to be greater than the second thickness in the non-thermistor working region, the thickness of the amorphous silicon thermistor layer between the quasi-parallel electrodes is thicker, which can directly reduce the formation of different conductive channels. The metal material of the first metal layer corresponding to the non-thermistor working region can diffuse into the amorphous silicon thermistor layer, thereby also preventing the formation of the corresponding conductive channel, thus significantly reducing noise. At the same time, it can significantly reduce heat capacity, shorten thermal response time, and improve device performance. Moreover, without being limited by heat capacity, the thickness of the amorphous silicon thermistor layer can be adjusted over a wide range, which can fully meet the design requirements of the resistor. Attached Figure Description

[0027] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure.

[0028] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is a schematic diagram of the structure of an uncooled infrared detection pixel provided in an embodiment of the present disclosure;

[0030] Figure 2 This is a schematic diagram of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;

[0031] Figure 3 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;

[0032] Figure 4 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;

[0033] Figure 5 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;

[0034] Figure 6 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;

[0035] Figure 7 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;

[0036] Figure 8 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;

[0037] Figure 9 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;

[0038] Figure 10 for Figure 9 A schematic diagram showing the working principle of the absorption sensing unit of an uncooled infrared detector pixel;

[0039] Figure 11 This is a schematic diagram illustrating the working principle of the absorption sensor of an uncooled infrared detection pixel in related technologies.

[0040] Figure 12 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;

[0041] Figure 13 A partial physical schematic diagram of the absorption sensing unit of an uncooled infrared detection pixel provided in an embodiment of this disclosure;

[0042] Figure 14 A schematic diagram of the structure of an absorption sensor for another uncooled infrared detection pixel provided in an embodiment of this disclosure;

[0043] Figure 15 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;

[0044] Figure 16 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;

[0045] Figure 17 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;

[0046] Figure 18 This is a schematic diagram of the structure of an uncooled infrared detection chip provided in an embodiment of the present disclosure;

[0047] Figure 19 This is a schematic diagram of the structure of an uncooled infrared detector core provided in an embodiment of the present disclosure;

[0048] Figure 20 A schematic diagram of the structure of an infrared detection pixel provided for related technologies;

[0049] Figure 21 A schematic diagram of the absorption sensor section of another infrared detection pixel provided for related technologies. Detailed Implementation

[0050] To better understand the above-mentioned objectives, features, and advantages of this disclosure, the solutions disclosed herein will be further described below. It should be noted that, unless otherwise specified, the embodiments and features described herein can be combined with each other.

[0051] Numerous specific details are set forth in the following description in order to provide a full understanding of this disclosure, but this disclosure may also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only some, and not all, of the embodiments of this disclosure.

[0052] Figure 1 This is a schematic diagram of the structure of an uncooled infrared detector pixel provided in an embodiment of the present disclosure, illustrating a film structure of the uncooled infrared detector pixel. (Reference) Figure 1 The uncooled infrared detector pixel 10 may include a first interconnection structure 11 and a second interconnection structure 12, wherein the first interconnection structure 11 connects the second interconnection structure 12 and the readout circuit 100. Specifically, the first interconnection structure 11 connects the second interconnection structure 12 and the readout circuit 100, and based on this connection, the first interconnection structure 11 enables electrical signal transmission between the second interconnection structure 12 and the readout circuit 100.

[0053] The first interconnection structure 11 includes a first connecting part 111, a first copper connecting part 112, a second copper connecting part 113, and a beam structure 114. In the first interconnection structure 11, the two ends of the first copper connecting part 112 are respectively connected to the first connecting part 111 and the second copper connecting part 113. The first connecting part 111 is connected to the readout circuit 100, and the second copper connecting part 113 is connected to the beam structure 114. The second interconnection structure 12 includes a third copper connecting part 121, a fourth copper connecting part 122, a fifth copper connecting part 123, and an absorption sensing part 124. In the second interconnection structure 12, the two ends of the fourth copper connecting part 122 are respectively connected to the third copper connecting part 121 and the fifth copper connecting part 123. The third copper connecting part 121 is connected to the beam structure 114, and the fifth copper connecting part 123 is connected to the absorption sensing part 124. In this context, the first interconnection structure 11 and the second interconnection structure 12 can both be referred to as interconnection structures, and the first copper connection portion 112, the second copper connection portion 113, the third copper connection portion 121, the fourth copper connection portion 122 and the fifth copper connection portion 123 can all be referred to as copper connection portions.

[0054] Specifically, taking the connection path between the readout circuit 100 and the absorption sensing unit 124 as an example, the readout circuit 100 is connected to the first connection part 111, the first connection part 111 is connected to the first copper connection part 112, the first copper connection part 112 is connected to the second copper connection part 113, the second copper connection part 113 is connected to the beam structure 114, the beam structure 114 is connected to the third copper connection part 121, the third copper connection part 121 is connected to the fourth copper connection part 122, the fourth copper connection part 122 is connected to the fifth copper connection part 123, and the fifth copper connection part 123 is connected to the absorption sensing unit 124. In this way, the connection between the absorption sensing unit 124 and the readout circuit 100 is realized. This connection includes electrical connection and mechanical connection, which are not limited here, but will be described by example later.

[0055] Specifically, the first interconnection structure 11 includes a first connecting portion 111 and a second copper connecting portion 113 disposed opposite to each other, a first copper connecting portion 112 disposed between the first connecting portion 111 and the second copper connecting portion 113, and a beam structure 114 disposed on the side of the second copper connecting portion 113 away from the first connecting portion 111.

[0056] For example, in the first interconnect structure 11, along the direction away from the readout circuit 100, reference Figure 1 The direction shown in the image is from bottom to top. Figure 1 (As shown to Z by a third party), the first connecting part 111, the first copper connecting part 112, the second copper connecting part 113 and the beam structure 114 are stacked and connected in sequence, and the first connecting part 111 located on the lower layer is connected to the readout circuit 100, and the beam structure 114 located on the upper layer is connected to the second interconnection structure 12, so as to realize the electrical signal transmission between the second interconnection structure 12 and the readout circuit 100 based on the first interconnection structure 11.

[0057] Specifically, the second interconnection structure 12 includes a third copper connection portion 121 and a fifth copper connection portion 123 disposed opposite to each other, a fourth copper connection portion 122 disposed between the third copper connection portion 121 and the fifth copper connection portion 123, and an absorption sensing portion 124 disposed on the side of the fifth copper connection portion 123 away from the third copper connection portion 121.

[0058] For example, in the second interconnect structure 12, along the direction away from the readout circuit 100, reference Figure 1 The direction shown in the image is from bottom to top. Figure 1 (As shown to Z by a third party), the third copper connection 121, the fourth copper connection 122, the fifth copper connection 123 and the absorption sensing part 124 are stacked and connected in sequence, and the third copper connection 121 located at the bottom layer is connected to the first interconnection structure 11, specifically connected to the beam structure 114 in the first interconnection structure 11, so as to transmit electrical signals to the readout circuit 100 through the first interconnection structure 11 including the beam structure 114.

[0059] Specifically, the absorption sensing unit 124 converts the infrared signal into an electrical signal. This electrical signal is transmitted to the readout circuit 100 via a series of sequentially connected copper connectors: a fifth copper connector 123, a fourth copper connector 122, a third copper connector 121, a beam structure 114, a second copper connector 113, a first copper connector 112, and a first connector 111. The readout circuit 100 receives the electrical signal. The readout circuit 100 can reflect the temperature information of the corresponding infrared signal based on the received electrical signal, thus realizing the temperature detection function of the infrared detection device.

[0060] At least the second copper connection portion 113 and the third copper connection portion 121 are located on the side of the beam structure 114 facing the readout circuit 100, and the beam structure 114 is on a flat plane.

[0061] For example, with Figure 1 Taking the uncooled infrared detector pixel 10 as an example, the second copper connection 113 and the third copper connection 121 are both located on the side of the beam structure 114 facing the readout circuit 100, and are both connected to the beam structure 114, which is on a flat plane.

[0062] The absorption sensing unit 124 includes an amorphous silicon thermistor layer 1241 and a first metal layer 1242. The first metal layer 1242 is located on the side of the amorphous silicon thermistor layer 1241 away from the readout circuit 100 and is connected to the fifth copper connection portion 123. The amorphous silicon thermistor layer 1241 is used to convert infrared signals into electrical signals, that is, to convert infrared temperature detection signals into infrared detection electrical signals, and transmits them to the readout circuit 100 through the first metal layer 1242, the fifth copper connection portion 123, the fourth copper connection portion 122, the third copper connection portion 121, the beam structure 114, the second copper connection portion 113, the first copper connection portion 112, and the first connection portion 111.

[0063] The amorphous silicon thermistor layer 1241 includes a thermistor working region 1111 and a non-thermistor working region 1112. The thermistor working region 1111 generates a resistance change based on the received thermal signal, meaning the amorphous silicon thermistor layer 1241 in the thermistor working region 1111 is used to convert the infrared temperature signal into an infrared detection electrical signal. The amorphous silicon thermistor layer 1241 in the thermistor working region 1111 is the effective resistive portion, while the amorphous silicon thermistor layer 1241 in the non-thermistor working region 1112 is the non-resistive portion. The first metal layer 1242 is used to transmit the infrared detection electrical signal converted from the thermistor working region 1111 to the substrate (e.g., a readout circuit) through a beam structure in the amorphous silicon infrared detection pixel.

[0064] The thermal working area 1111 has a first thickness H1, and the non-thermal working area 1112 has a second thickness H2, with the first thickness H1 being greater than the second thickness H2. Therefore, the thermal working area 1111 is higher than the non-thermal working area 1112. The effective value of the second thickness H2 is less than 2000 angstroms. Figure 1 The thermal working area 1111 forms a raised structure relative to the non-thermal working area 1112.

[0065] The first metal layer 1242 is in contact with the non-thermosensitive working area 1112 and at least with the side surface of the thermosensitive working area 1111. Adjacent pairs of first metal layers 1242 located on the side surface of the thermosensitive working area 1111 form quasi-parallel electrodes; that is, a pair of metal electrodes 1242 in contact with the side surface of the same thermosensitive working area 1111 form quasi-parallel electrodes. Figure 1 Within the thermal working area 1111, a pair of metal electrodes 1242 corresponding to the beginning and end of the arrows form quasi-parallel electrodes. Quasi-parallel electrodes refer to a pair of first metal layers 1242 that may deviate during the manufacturing process due to process reasons. They may not be a pair of electrodes that are strictly parallel in a mathematical sense, but may have a small angular deviation. Therefore, in this embodiment, the pair of metal electrodes is referred to as quasi-parallel electrodes.

[0066] The greater the difference in thickness between the first thickness H1 and the second thickness H2, the larger the area of ​​the quasi-parallel electrode, the fewer the conductive channels in the thermistor working area 1111, and the less the fluctuation in the conductivity of the contact point between different conductive channels caused by temperature fluctuations. This is more conducive to eliminating additional noise. When the conductive channel is a single channel, the contact point conductivity will not exist, and no additional noise will be generated.

[0067] contrast Figure 21 In the uncooled infrared detector pixel 01 of the related technology, the amorphous silicon layer 011 on the absorption plate is fully retained and in contact with the metal layer 012. The thickness of the amorphous silicon layer 011 directly affects the noise level of the device, and the thicker the layer, the greater the 1 / f noise, because a thicker amorphous silicon layer 011 provides more conductive channels, such as... Figure 21 As indicated by the arrow within the amorphous silicon layer 011, amorphous silicon has a thermistor temperature coefficient, meaning its resistance changes with temperature. Therefore, temperature fluctuations cause conductance fluctuations at the contact points between conductive channels, creating 1 / f noise. The thicker the amorphous silicon layer 011, the more conductive channels there are, and the greater the noise caused by conductance fluctuations at the contact points between different conductive channels. Simultaneously, the overall amorphous silicon thin-film structure results in a large heat capacity, long thermal response time, and poor NETD (thermal sensitivity) performance. Furthermore, due to the high sheet resistance of amorphous silicon, a thicker amorphous silicon layer is required to achieve the designed resistance value. Reducing the overall thickness of the amorphous silicon layer would further increase the sheet resistance, requiring a longer effective amorphous silicon resistor and a larger area for the absorption sensing element. This leads to a more complex structural design and hinders pixel miniaturization.

[0068] In the embodiments of this application, the uncooled infrared detector pixel 10 has a simple structure. By setting the first interconnection structure 11 and the second interconnection structure 12, the connection between the readout circuit 100 and the absorption sensing part 124 is realized. Compared with the traditional hollow columnar structure with a single layer of metal as the interconnection, the fabrication process of the interconnection structure in the uncooled infrared detector pixel 10 provided in this embodiment is mature, the process stability is good, there is no noise instability problem caused by residual particles, and the noise consistency is good. At the same time, it avoids the problem of poor electrical contact caused by high steps, the contact resistance is small, and the uniformity is good. In addition, the planarization process is mature and stable, and can perfectly meet the design requirements. Furthermore, the interconnection structure size can be made very small, and smaller pixel designs can be realized. Furthermore, in the infrared detector chip formed by the infrared detector pixel including the interconnection structure, the consistency between different pixels is good and the performance is stable. Moreover, the interconnection process can achieve efficient and low-cost production, so the infrared detector chip can achieve the goal of low processing cost, high yield, and mass production. Furthermore, by setting the first thickness H1 of the amorphous silicon thermistor layer 1241 in the thermistor working region 1111 to be greater than its second thickness H2 in the non-thermistor working region 1112, quasi-parallel electrodes can be formed using a pair of adjacent first metal layers 1242 located on the side of the thermistor working region 1111. These quasi-parallel electrodes can improve the uniformity of the conductive channels, thereby directly reducing the formation of different conductive channels and reducing noise. At the same time, it can significantly reduce the heat capacity, shorten the thermal response time, and improve device performance. Moreover, without being limited by the heat capacity, the thickness of the amorphous silicon thermistor layer can be adjusted over a wide range, which can fully meet the design requirements of the resistor and is beneficial for pixel miniaturization.

[0069] It should be noted that, Figure 1 The illustration only shows, by way of example, that the first copper connection portion 112 in a single first interconnect structure 11 includes one copper pillar, and the fourth copper connection portion 122 in a single second interconnect structure 12 includes one copper pillar, but this does not constitute a limitation on the number of copper pillars in the first copper connection portion 112 and the fourth copper connection portion 122. In other implementations, the number of copper pillars in a single first copper connection portion 112 may be two or more; the number of copper pillars in a single fourth copper connection portion 122 may be two or more; and the number of copper pillars in a single fourth copper connection portion 122 may be equal to or unequal to the number of copper pillars in a single first copper connection portion 112, which is not limited here.

[0070] In some embodiments, Figure 2 This is a schematic diagram of another uncooled infrared detector pixel provided in an embodiment of this disclosure. Figure 1 Based on, refer to Figure 2 In the uncooled infrared detector pixel 10, the first connecting portion 111 includes one of an aluminum layer 11A, an aluminum alloy layer, a copper layer, and a copper alloy layer. Figure 2 Taking aluminum layer 11A as an example (the same applies to aluminum alloy layer), the first connection portion 111 also includes a titanium layer and / or a titanium nitride layer, located on the side of aluminum layer 11A (and / or aluminum alloy layer) facing away from and / or towards the readout circuit. Figure 2 In this configuration, the first connection portion 111 includes an aluminum layer 11A, a titanium layer 11Ti, and a titanium nitride layer 11TiN; wherein the titanium layer Ti is located on the side of the aluminum layer 11A facing away from the readout circuit 100, and the titanium nitride layer 11TiN is located on the side of the aluminum layer 11A facing the readout circuit 100. For example, using... Figure 2 Taking the orientation shown as an example, the aluminum layer 11A is located above the readout circuit 100, the titanium layer 11Ti is located above the aluminum layer 11A, and the titanium nitride layer 11TiN is located below the aluminum layer 11A, specifically between the aluminum layer 11A and the readout circuit 100.

[0071] In this embodiment, the first connecting part 111 may also be referred to as an aluminum connecting part.

[0072] In other embodiments, the aluminum connector may include an aluminum layer and a titanium layer, with the titanium layer located on the side of the aluminum layer facing away from and / or towards the readout circuit; or, the aluminum connector may include an aluminum layer and a titanium nitride layer, with the titanium nitride layer located on the side of the aluminum layer facing away from and / or towards the readout circuit; or, the aluminum connector may include an aluminum layer, a titanium layer, and a titanium nitride layer, with the titanium layer located on the side of the aluminum layer facing away from and / or towards the readout circuit, and the titanium nitride layer located on the side of the aluminum layer facing away from and / or towards the readout circuit. When the titanium layer and the titanium nitride layer are located on the same side of the aluminum layer, the titanium layer is located between the aluminum layer and the titanium nitride layer, or the titanium nitride layer is located between the aluminum layer and the titanium layer, which is not limited here.

[0073] The device further includes at least one titanium layer and one titanium nitride layer located on the side of the aluminum layer facing away from and / or towards the absorption sensing portion, provided that at least one aluminum connection portion is provided. The titanium layer and / or titanium nitride layer can act as a diffusion barrier layer to prevent diffusion between the aluminum layer and the dielectric, thereby improving the stability and reliability of the device. Simultaneously, the titanium layer and / or titanium nitride layer can act as an adhesion layer to increase the adhesion between the aluminum layer and the dielectric and the tungsten structure, preventing film peeling that could affect the process and performance. Furthermore, the titanium layer and / or titanium nitride layer can act as an anti-reflection layer, significantly reducing reflectivity during photolithography to ensure clear edges of the exposed pattern. Additionally, the titanium layer and / or titanium nitride layer can act as an etching barrier layer to prevent corrosion and damage to the aluminum layer during etching and cleaning. Finally, the titanium layer and / or titanium nitride layer can act as a protective layer to protect the aluminum layer surface from external environmental erosion and damage, thereby improving device performance and stability.

[0074] In some embodiments, Figure 3 This is a schematic diagram of the structure of another uncooled infrared detector pixel provided in an embodiment of this disclosure, with reference to... Figure 3In the uncooled infrared detector pixel 10, the first connection portion 111 is the top metal layer of the readout circuit 100, or as a reference. Figure 1 or Figure 2 The first connection portion 111 is a rewiring layer above the readout circuit 100; the same layer structure of the first connection portion 111 serves as a reflective layer for the uncooled infrared detection pixel, and / or at least one metal layer in the readout circuit 100 serves as a reflective layer for the uncooled infrared detection pixel.

[0075] The first connection portion 111 serves as an interface for the readout circuit 100, enabling the transmission of electrical signals to the readout circuit 100. This first connection portion 111 can be configured as the top metal layer of the readout circuit 100, such as... Figure 3 As shown, by utilizing the film layer within the readout circuit 100 as a structure within the first interconnect structure 11, the total number of film layers is reduced, simplifying the overall structure of the uncooled infrared detection pixel 10. Alternatively, the first connection portion 111 can be disposed above the readout circuit 100 (to... Figure 1 or Figure 2 (Taking the orientation shown in the figure as an example), specifically, it is a rewiring metal layer on the readout circuit 100 to reduce the impact on the readout circuit 100 and ensure the stability and accuracy of the electrical signal.

[0076] The same-layer structure of the first connection part 111 can serve as the reflective layer of the uncooled infrared detection pixel 10; the same-layer structure of at least one metal layer in the readout circuit 100 can also serve as the reflective layer of the uncooled infrared detection pixel 10. The reflective layer is used to reflect infrared signals and forms a resonant cavity structure together with the absorption sensing part 124 to improve the infrared absorption characteristics of the uncooled infrared detection pixel 10.

[0077] In some embodiments, continue to refer to Figure 1 , Figure 2 or Figure 3 In the uncooled infrared detection pixel 10, in the first interconnection structure 11, the plane where the first connection part 111 is located is parallel to the plane where the second copper connection part 113 is located, and is perpendicular to the first copper connection part 112.

[0078] In the same first interconnect structure 11, the first connecting portion 111 and the second copper connecting portion 113 are arranged opposite to each other, and their planes are parallel; Figure 1 Taking the shown orientation as an example, it can be understood that the planes containing the first connecting part 111 and the second copper connecting part 113 are both parallel to the plane. Figure 1 The plane containing the first direction X and the second direction Y shown in the figure is perpendicular to the first copper connection 112. That is, the first copper connection 112 is perpendicularly connected between the first connection 111 and the second copper connection 113. This arrangement helps to shorten the transmission path of the electrical signal, improve the response speed, reduce signal attenuation, and improve the signal-to-noise ratio.

[0079] In some embodiments, continue to refer to Figure 1 , Figure 2 or Figure 3 In the uncooled infrared detector pixel 10, in the second interconnection structure 12, the plane where the third copper connection part 121 is located is parallel to the plane where the fifth copper connection part 123 is located, and is perpendicular to the fourth copper connection part 122.

[0080] In the same second interconnection structure 12, the third copper connection portion 121 and the fifth copper connection portion 123 are arranged opposite to each other, and their planes are parallel; Figure 1 Taking the shown orientation as an example, it can be understood that the planes containing the third copper connector 121 and the fifth copper connector 123 are both parallel to the plane shown. Figure 1 The plane containing the first direction X and the second direction Y shown in the figure is perpendicular to the fourth copper connection 122. That is, the fourth copper connection 122 is perpendicularly connected between the third copper connection 121 and the fifth copper connection 123. This helps to shorten the transmission path of the electrical signal, improve the response speed, reduce signal attenuation, and improve the signal-to-noise ratio.

[0081] In some embodiments, continue to refer to Figure 1 , Figure 2 or Figure 3 In the uncooled infrared detector pixel 10, the first interconnect structure 11 is located on the side of the second interconnect structure 12 facing the readout circuit 100; in other embodiments, the first interconnect structure 11 may also be located on the side of the second interconnect structure 12 away from the readout circuit 100.

[0082] Furthermore, the second copper connection portion 113 in the first interconnection structure 11 and the third copper connection portion 121 in the second interconnection structure 12 are disposed on the same layer.

[0083] In this configuration, the second copper connection portion 113 in the first interconnection structure 11 and the third copper connection portion 121 in the second interconnection structure 12 are both directly connected to the beam structure 114. For example, the second copper connection portion 113 in the first interconnection structure 11 and the third copper connection portion 121 in the second interconnection structure 12 are both located on the side of the beam structure 114 facing the readout circuit 100.

[0084] For example, with Figure 1 Taking the orientation shown as an example, the second copper connection 113 in the first interconnection structure 11 is the upper copper connection in the first interconnection structure 11, and the third copper connection 121 in the second interconnection structure 12 is the lower copper connection in the second interconnection structure 12. Both of these copper connections are directly connected to the beam structure 114. By setting these two copper connections to be at least partially on the same layer, for example, they can be patterned based on copper layers formed in the same process to achieve the same layer, thereby simplifying the process and the connection structure.

[0085] In some embodiments, continue to refer to Figures 1-3 In the uncooled infrared detector pixel 10, the number of copper pillars 2C in the first copper connector 112 and / or the fourth copper connector 122 is one or more. For example... Figure 1 or Figure 2 As shown, the number of copper pillars 2C in the first copper connector 112 and / or the fourth copper connector 122 is one; or, as shown... Figure 3 As shown, the number of copper pillars 2C in the first copper connector 112 and / or the fourth copper connector 122 is multiple, for example, two. In other embodiments, the number of copper pillars 2C in the uncooled infrared detector pixel 10 may also be three, four, or more, which is not limited here. Furthermore, the number of copper pillars 2C in the first copper connector 112 and the number of copper pillars 2C in the fourth copper connector 122 may be equal or unequal, which is not limited here.

[0086] When there are multiple copper pillars 2C in the same first copper connection portion 112 and / or fourth copper connection portion 122, the multiple copper pillars 2C can be arranged in a row, a column, an array, or any pattern, which is not limited here. Regarding the number of copper pillars 2C, the embodiments of this disclosure do not limit it, as long as it can meet the heat conduction, electrical conduction and support requirements of the uncooled infrared detection pixel 10.

[0087] In some embodiments, Figure 4 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of this disclosure. (See reference...) Figure 4 In the uncooled infrared detector pixel 10, the copper connector includes an adhesion layer 2N, which covers at least the sides and bottom of the copper pillar 2C. The adhesion layer 2N includes at least one of a titanium layer, a chromium layer, and a titanium-tungsten alloy layer. The bottom of the copper pillar 2C faces the readout circuit 100. Figure 4 Taking the orientation shown in the figure as an example, the bottom of copper pillar 2C is the lower part of copper pillar 2C.

[0088] When the adhesion layer 2N is placed at the bottom of the copper pillar 2C, it can enhance the adhesion between the copper connection part and the corresponding bottom connection part, that is, enhance the connection performance, including enhancing its mechanical connection performance and improving structural stability, as well as enhancing its electrical connection performance, reducing contact resistance, reducing loss in the process of electrical signal transmission, and improving detection performance.

[0089] The adhesion layer 2N surrounds the side of the copper pillar 2C, which increases the contact area between the adhesion layer 2N and the copper pillar 2C. This is equivalent to widening the transmission channel of the electrical signal and reducing its transmission resistance, thereby further reducing the transmission loss of the electrical signal and improving the detection performance. It also increases the adhesion characteristics with the medium, which can ensure that the copper pillar 2C can be completely deposited in the through hole to form a copper pillar. Furthermore, it can prevent diffusion between the copper pillar 2C and the medium, thereby improving the stability and reliability of the device.

[0090] It is understood that the adhesive layer 2N may cover the entire side of the copper pillar 2C or only part of the side of the copper pillar 2C, and this is not limited here.

[0091] The adhesion layer 2N may include at least one of a titanium layer, a chromium layer, and a titanium-tungsten alloy layer to form an adhesion layer based on a conductive layer, thereby enhancing the mechanical and electrical connection performance between corresponding connecting parts.

[0092] In some embodiments, Figure 5 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of this disclosure. (See reference...) Figure 5 In the uncooled infrared detector pixel 10, the copper connector includes a blocking layer 2D, which covers at least the sides and bottom of the copper pillar 2C. The blocking layer 2D includes a tantalum layer and / or a tantalum nitride layer.

[0093] The position of the barrier layer 2D relative to the copper pillar 2C is the same as the position of the adhesion layer 2N relative to the copper pillar 2C. The positional relationship can be understood as described above, and will not be repeated here.

[0094] The barrier layer 2D prevents the copper pillar 2C or the copper layer from diffusing with other material layers (such as the dielectric layer and sacrificial layer mentioned below), ensuring the performance of the film layer and thus ensuring the performance of the device.

[0095] In some embodiments, Figure 6 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of this disclosure. Figure 7 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of this disclosure. (See reference...) Figure 6 or Figure 7 In the uncooled infrared detector pixel 10, the first connecting part 111, the second copper connecting part 113, the third copper connecting part 121, and the fifth copper connecting part 123 all include a copper layer 2T; the copper layer 2T can be a pure copper layer or a copper alloy layer; the blocking layer 2D also covers the sides and bottom of the copper layer 2T of the first connecting part 111 and / or the third copper connecting part 121; the copper layer 2T of the second copper connecting part 113 and the copper pillar 2C of the first copper connecting part 112 are an integral copper structure, the copper layer 2T of the fifth copper connecting part 123 and the copper pillar 2C of the fourth copper connecting part 122 are an integral copper structure, and the blocking layer 2D covers the sides and bottom of the integral copper structure.

[0096] This is how copper interconnect structures are achieved. Copper has a significantly lower resistivity than aluminum, thus reducing signal delay and increasing the operating speed of uncooled infrared detector pixels 10 and the chips built upon them. Furthermore, the entire copper interconnect structure is made of copper, reducing contact resistance compared to aluminum interconnect structures, which is beneficial for improving chip performance. Additionally, copper exhibits far superior electromigration resistance compared to aluminum. Electromigration, the migration of metal atoms under the influence of electric current, can lead to interconnect breakage; copper's relatively higher electromigration resistance makes it more reliable, while aluminum processes are more prone to electromigration failure in high-density integrated circuits. Moreover, the copper process involves etching lines in an insulating layer, filling them with copper, and finally planarizing to form the copper interconnect structure. This process... High precision, fewer defects, and a smooth interconnect structure surface facilitate the planar fabrication of upper-layer sensing structures, ensuring the uniformity of long films and the integrity of electrical connections. Compared to aluminum processes, which require complex barrier layers to prevent diffusion, copper processes only require thinner barrier layers, simplifying the process. Furthermore, copper exhibits superior high-temperature performance stability compared to aluminum, giving it an advantage in high-temperature processes and long-term reliability in chip manufacturing. Additionally, copper interconnect structures offer better thermal conductivity and heat dissipation, reducing power consumption. Moreover, copper interconnects allow for smaller linewidths, increasing interconnect density and meeting high-density interconnect requirements, enabling infrared detectors with smaller linewidths, smaller pixel sizes, larger pixel arrays, and superior performance.

[0097] In some embodiments, Figure 8 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of this disclosure. (See reference...) Figure 8 The uncooled infrared detector pixel 10 may also include a first protective layer 13, which covers the exposed surfaces of the interconnect structure and / or readout circuit 100. The first protective layer 13 is used at least to insulate and protect the interconnect structure and / or readout circuit 100.

[0098] The first protective layer 13 is used to prevent low-pressure metal discharge. The first protective layer 13 includes at least one of aluminum oxide layer, silicon oxide layer, hafnium oxide layer, silicon nitride layer, amorphous silicon layer, silicon carbide layer and amorphous carbon layer. It can enhance the mechanical strength of the connection and prevent the upper structure (i.e. the corresponding beam structure and absorption sensing part) from falling off due to poor connection with the copper connection part, thereby enhancing the structural stability. At the same time, it can protect the entire structure from corrosion and influence from the external environment.

[0099] Furthermore, the first protective layer 13 is provided on the side of the copper pillar. This first protective layer 13 serves as electrical insulation, reducing electrical connection abnormalities caused by metal discharge under low-pressure environments or the introduction of additional noise signals, thus slowing down the performance degradation of the copper pillar and extending the service life of the corresponding detection equipment. In addition, while protecting the copper pillar, the first protective layer 13 also acts as an auxiliary support structure, improving the mechanical stability of the interconnect structure and thereby enhancing the overall structural stability of the uncooled infrared detection pixel 10. Specifically, when an adhesion layer 2B and / or a blocking layer 2D are also provided on the side of the copper pillar, the first protective layer 13 can cover the outside of the adhesion layer 2B and / or the blocking layer 2D.

[0100] In some implementations, the first protective layer 13 also covers the surface of the copper connector (or aluminum connector) that does not correspond to the copper pillar, in order to further enhance structural stability and resist the influence of the external environment.

[0101] In some embodiments, the amorphous silicon thermistor layer 1241 includes an amorphous silicon layer doped with one or more elements selected from boron, phosphorus, hydrogen, germanium, vanadium, and oxygen.

[0102] Specifically, the thermistor working area 1111 can generate a resistance change based on the received thermal signal. The amorphous silicon thermistor layer 1241 includes an amorphous silicon material layer, which can be an amorphous silicon material layer doped with one or more elements such as boron (B), phosphorus (P), hydrogen (H), germanium (Ge), vanadium (V), and oxygen (O). Amorphous silicon materials have advantages such as large-area low-temperature film formation and compatibility with conventional IC processes, and are therefore widely used in the semiconductor field. Furthermore, amorphous silicon is not corroded by hydrogen fluoride gas, which is beneficial for the release of the sacrificial layer in infrared detectors.

[0103] In some embodiments, you may continue to refer to Figures 1-8 In any figure, the thermal working area 1111 includes a first bottom 111B and a first top 111T, and the non-thermal working area 1112 includes a second bottom 112B and a second top 112T, respectively. The first bottom 111B and the second bottom 112B are located in the same plane, and the height of the first top 111T is greater than the height of the second top 112T, thus making the first thickness H1 of the thermal working area 1111 greater than the second thickness H2 of the non-thermal working area 1112. The first top 111T is located on the side of the first bottom 111B opposite to the readout circuit 100, and the second top 112T is located on the side of the second bottom 112B opposite to the readout circuit 100.

[0104] It is understood that the first bottom 111B and the second bottom 112B in the embodiments of this disclosure are located on the same plane, which is not a strictly mathematical plane, but a plane that allows for process errors.

[0105] In some embodiments, the non-thermal working area 1112 is thinned to a second thickness H2 by etching.

[0106] Specifically, the non-thermal working area 1112 and the thermal working area 1111 can be formed based on an amorphous silicon layer of a certain thickness. For example, the thickness of the non-thermal working area 1112 can be reduced by etching, so that the second thickness H2 of the thinned amorphous silicon thermal layer 1241 in the non-thermal working area 1112 is smaller than its first thickness H1 in the thermal working area 1111. The process is simple, mature and controllable, which is conducive to ensuring device yield.

[0107] In other embodiments, the thermistor working area 1111 and the non-thermistor working area 1112 of the amorphous silicon thermistor layer 1241 may also be formed in other ways, which are not limited here.

[0108] In some embodiments, continue to refer to Figures 1-8 In any figure, the first metal layer 1242 is located on the side of the amorphous silicon thermistor layer 1241 that is opposite to the first bottom layer 111B and the second bottom layer 112B.

[0109] by Figure 1 Taking the orientation shown as an example, the first metal layer 1242 is located above the amorphous silicon thermistor layer 1241 and covers part of the first top 111T, the second top 112T, and the side of the thermistor working area 1111 (i.e., the adjacent side of the first top 111T and the second top 112T). It can transmit the infrared detection electrical signal converted from the thermistor working area 1111 of the amorphous silicon thermistor layer 1241 to the readout circuit 100 through the second interconnection structure 12 and the first interconnection structure 11.

[0110] In some embodiments, the first metal layer 1242 includes at least one selected from titanium-tungsten alloy (TiW), titanium (Ti), titanium nitride (TiN), aluminum (Al), nickel (Ni), chromium (Cr), platinum (Pt), nickel (Ni) alloy, and metal silicides (e.g., nickel silicide (NiSi)). These materials, as conductive materials, can effectively improve the oxidation resistance of the first metal layer 1242 and are commonly used conductive metal materials in CMOS processes.

[0111] In some embodiments, material from the first metal layer 1242 located in the non-thermal working region 1112 diffuses into the non-thermal working region 1112, which is equivalent to metallizing a portion of the amorphous silicon layer in the non-thermal working region 1112 of the amorphous silicon thermistor layer 1241 that contacts the first metal layer 1242, increasing the area of ​​the quasi-parallel electrode. Referring to the preceding text, the effective value of the second thickness H2 of the non-thermal working region 1112 does not include the thickness of the material diffused into the first metal layer 1242, but can be understood as the thickness of the amorphous silicon layer that is not metallized. This further reduces the formation of different conductive channels and lowers noise. The following text will combine... Figure 4 Detailed explanation.

[0112] In some embodiments, Figure 9 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of this disclosure. Figure 1 Based on, refer to Figure 9 In the uncooled infrared detector pixel 10, the absorption sensing unit 124 further includes a dielectric layer 1243; the dielectric layer 1243 covers the thermal working area 1111 of the amorphous silicon thermistor layer 1241; and the dielectric layer 1243 is located between the first metal layer 1242 and the amorphous silicon thermistor layer 1241.

[0113] by Figure 9 Taking the orientation shown as an example, the dielectric layer 1243 is located above the amorphous silicon thermistor layer 1241, and the first metal layer 1242 is located above the dielectric layer 1243. The dielectric layer 1243 can isolate the amorphous silicon thermistor layer 1241 and the first metal layer 1242 in the thermistor working area 1111, protect the resistance of the thermistor working area 1111 of the amorphous silicon thermistor layer 1241 from forming metal silicide, and at the same time prevent the first metal layer 1242 from affecting the thermistor working area 1111 of the amorphous silicon thermistor layer 1241 during the etching process, avoid affecting the design resistance, and ensure that the resistance of the thermistor working area 1111 is consistent with the design value.

[0114] For example, the dielectric layer 1243 may include one or more of silicon oxide, silicon nitride, or silicon oxynitride to ensure that the effective resistive portion of the amorphous silicon thermistor layer 1241 does not form metal silicides.

[0115] Specifically, the dielectric layer 1243 is located on the thermistor working area 1111 of the amorphous silicon thermistor layer 1241, and between the first metal layer 1242 and the amorphous silicon thermistor layer 1241. The dielectric layer 1243 separates the first metal layer 1242 and the amorphous silicon thermistor layer 1241, which can prevent the thermistor working area 1111 of the amorphous silicon thermistor layer 1241 from being affected by the metal in the first metal layer 1242. Using silicon oxide, silicon nitride, or silicon oxynitride as the dielectric layer 1243 can meet the requirement that the thermistor working area 1111 of the amorphous silicon thermistor layer 1241 is not affected by the first metal layer 1242. Furthermore, the metal used to form the metal silicide layer will not react with silicon oxide, silicon nitride, or silicon oxynitride, which can protect the amorphous silicon thermistor working area 1111 from forming metal silicides. Moreover, the material preparation process is more mature and the price is relatively low, which helps to reduce the manufacturing cost of infrared detectors.

[0116] For example, Figure 10 and Figure 11The comparison illustrates the improvement in the working principle of the uncooled infrared detection pixel 10 provided in the embodiments of this disclosure compared to the uncooled infrared detection pixel 01 in related technologies. Specifically, in conjunction with... Figure 1 or Figure 9 By setting the first thickness H1 of the amorphous silicon thermistor layer 1241 in the thermistor working region 1111 to be greater than its second thickness H2 in the non-thermistor working region 1112, quasi-parallel electrodes can be formed on opposite sides of the thermistor working region 1111, as reference. Figure 10 In section ①, the quasi-parallel electrode can directly reduce the formation of different conductive channels, which is beneficial for reducing noise; at the same time, in the non-thermosensitive working area 1112, the metal material of the first metal layer 1242 can diffuse into the amorphous silicon thermistor layer 1241, further preventing the formation of conductive channels, corresponding to Figure 10 Therefore, the noise will be greatly reduced. The effective thickness of the second thickness H2 does not include the thickness diffused into by the first metal layer. Specifically, the conductive channels of the amorphous silicon thermistor layer (corresponding to...) Figure 11 ④) will be greatly reduced, which can be regarded as the unification of some conductive channels (corresponding to Figure 10 (③) This significantly reduces noise. Simultaneously, because the thickness of the amorphous silicon thermistor layer is reduced in the non-thermal working area, the heat capacity is also greatly reduced, the thermal response time is shortened, and the thermal sensitivity performance is improved. Furthermore, without being limited by heat capacity, the thickness of the amorphous silicon layer can be adjusted over a wide range, fully meeting the design requirements of the resistor and facilitating pixel miniaturization.

[0117] In some embodiments, Figure 12 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of this disclosure. Figure 9 Based on, refer to Figure 12 In this uncooled infrared detector pixel 10, the absorption sensing unit 124 further includes a second protective layer 1244; the second protective layer 1244 is located on the side of the amorphous silicon thermistor layer 1241 opposite to the first metal layer 1242, and on the side of the first metal layer 1242 opposite to the amorphous silicon thermistor layer 1241, and is used to prevent damage caused by the release of the sacrificial layer during the fabrication of the absorption sensing unit 124. Figure 12 Taking the orientation shown as an example, the second protective layer 1244 can be located below the amorphous silicon thermistor layer 1241 and above the first metal layer 1242 and the dielectric layer 1243.

[0118] In other embodiments, the second protective layer 1244 may be located only on the side of the amorphous silicon thermistor layer 1241 away from the first metal layer 1242, or the second protective layer 1244 may be located only on the side of the first metal layer 1242 away from the amorphous silicon thermistor layer 1241, which is not limited here.

[0119] For example, Figure 13This is a partial schematic diagram of the absorption sensor of an uncooled infrared detector pixel provided in an embodiment of this disclosure. (See reference) Figure 13 In the uncooled infrared detector pixel 10, the absorption sensing unit 124 includes an amorphous silicon thermistor layer 1241, a first metal layer 1242, a dielectric layer 1243, and a second protective layer 1244, so as to... Figure 9 Taking the orientation shown as an example, the dielectric layer 1243 is located above the thermal working area 1111 of the amorphous silicon thermal layer 1241, and the first metal layer 1242 is located above the non-thermal working area 1112, the side of the thermal working area 1111, the side of the dielectric layer 1243, and above its edge area. The amorphous silicon thermistor layer 1241 includes a thermistor working area 1111 and a non-thermistor working area 1112. A first metal layer 1242 covers the non-thermistor working area 1112, the side of the thermistor working area 1111, and the edge region of the dielectric layer 1243 located on top of the thermistor working area 1111. The dielectric layer 1243 covers the top of the thermistor working area 1111 to isolate the first metal layer 1242 and the thermistor working area 1111 of the amorphous silicon thermistor layer 1241. A second protective layer 1244 is located below the amorphous silicon thermistor layer 1241, above the first metal layer 1242, and above the dielectric layer 1243 not covered by the first metal layer 1242.

[0120] In the uncooled infrared detector pixel 10 provided in this embodiment, by setting a second protective layer 1244 on the side of the amorphous silicon thermistor layer 1241 opposite to the first metal layer 1242, and / or on the side of the first metal layer 1242 opposite to the amorphous silicon thermistor layer 1241, the amorphous silicon thermistor layer 1241 and / or the first metal layer 1242 can be protected from oxidation or corrosion during the fabrication of the absorption sensing part 124, for example, preventing VHF corrosion and improving the stability of the absorption sensing part 124 structure. Exemplarily, the second protective layer 1244 may include at least one or more of silicon nitride, aluminum oxide, amorphous silicon, silicon carbide, and amorphous carbon.

[0121] In some embodiments, Figure 14 This is a schematic diagram of the absorption sensing section of another uncooled infrared detector pixel provided in an embodiment of the present disclosure. It shows the planar structure (i.e., the structure in the XY plane) and the cross-sectional film layer structure (i.e., the structure along cross-section A1-A2) of the absorption sensing section of the pixel. (Refer to...) Figure 14 In the uncooled infrared detector pixel 10, the absorption sensing part 124 also includes a through hole 1240; the through hole 1240 is in the thickness direction (i.e. Figure 14 The absorption sensor 124 (shown in the Z direction) penetrates through it. This configuration improves the absorption rate and enhances the accuracy of infrared detection.

[0122] The through hole 1240 can be a circular hole, a square hole, a polygonal hole, or an irregularly shaped hole, and is not limited herein. Furthermore, the number of through holes 1240 is not limited in this embodiment.

[0123] In this embodiment, by providing the absorption sensing part 124 with a through hole 1240, which at least penetrates the absorption sensing part 124, it is beneficial to increase the contact area between the chemical reagent used in the release of the sacrificial layer and the sacrificial layer, thereby accelerating the release rate of the sacrificial layer. Furthermore, the through hole 1240 on the absorption sensing part 124 helps to release the internal stress of the absorption sensing part 124, optimizes the flatness of the absorption sensing part 124, and improves the structural stability of the absorption sensing part 124, thereby improving the structural stability of the entire infrared detector.

[0124] In some embodiments, Figure 15 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of this disclosure. (See reference...) Figure 15 In the uncooled infrared detector pixel 10, the beam structure 114 includes at least an insulating layer 1141 and a second metal layer 1142; the second metal layer 1142 is located on the side of the insulating layer 1141 facing the readout circuit 100, and is connected to at least the second copper connection portion 113 and the third copper connection portion 121. In other embodiments, the second metal layer 1142 may be located on the side of the insulating layer 1141 away from the readout circuit 100.

[0125] In the preceding paragraph, "connection" refers to either electrical connection or non-electrical connection (i.e., support connection). The second copper connection portion 113 is at least partially electrically connected to the beam structure 114. When the second copper connection portion 113 is partially electrically connected to the beam structure 114, the non-electrically connected second copper connection portion 113, together with the first copper connection portion 112 and the first connection portion 111, provides structural support for the beam structure 114. Specifically, the electrical connection is achieved by the second metal layer 1142 in the beam structure 114. When the second metal layer 1142 is connected to the interconnection structure, an electrical connection is achieved between the beam structure 114 and the interconnection structure. When the second metal layer 1142 is not connected to the interconnection structure and only the insulating layer 1141 is connected to the interconnection structure, the beam structure 114 only serves a structural support function.

[0126] The insulating layer 1141 can be made of at least one of amorphous silicon, amorphous germanium, amorphous germanium silicon, aluminum oxide, silicon nitride, amorphous carbon, and silicon carbide, and the second metal layer 1142 can be made of at least one of titanium, titanium nitride, titanium-tungsten alloy, nickel, chromium, platinum, nickel-based alloy, and titanium-based alloy.

[0127] In some embodiments, continue to refer to Figure 15In the uncooled infrared detector pixel 10, the fourth copper connector 122 passes through the insulating layer 1141 and is electrically connected to the third copper connector 121.

[0128] Among them, at least the insulating layer 1141 includes a hollow area, such as Figure 15 As shown at the location of the second interconnection structure 12 on the left side, the insulating layer 1141 includes a hollow area, or both the insulating layer 1141 and the second metal layer 1142 include hollow areas, i.e., the beam structure 114 includes a hollow area. The fourth copper connection portion 122 is electrically connected to the third copper connection portion 121 within the hollow area; the area of ​​this hollow area is larger than the bottom area of ​​the fourth copper connection portion 122. By first etching away the insulating layer 1141 or the insulating layer 1141 and the second metal layer 1142 above the third copper connection portion 121, the fourth copper connection portion 122 can be prevented from being non-conductive in the third copper connection portion 121, thus ensuring the stability and reliability of the electrical connection.

[0129] Alternatively, the area of ​​the hollowed-out area in the beam structure 114 can be equal to the bottom area of ​​the fourth copper connector 122, such as... Figure 15 As shown at the location of the second interconnection structure 12 on the right side, the fourth copper connector 122 passes through the beam structure 114 in this hollowed-out area and is electrically connected to the third copper connector 121. The structural design is simple and does not require consideration of the impact of large-area etching of the beam structure 114 on the corrosion and damage of the third copper connector 121.

[0130] In some embodiments, Figure 16 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of this disclosure. (See reference...) Figure 16 The uncooled infrared detector pixel 10 also includes at least one release blocking layer 14, which is located at least on the side of the readout circuit 100 facing the absorption sensing part 124; the first copper connection part 112 passes through the release blocking layer 14 and is electrically connected to the first connection part 111.

[0131] The release barrier layer 14 is used at least to protect the readout circuit 100 from process influences during the release etching process for fabricating the interconnect structure and during the etching process for the sacrificial layer. Optionally, the release barrier layer 14 is located at the interface between the readout circuit 100 and the interconnect structure and / or within the interconnect structure. That is, the release barrier layer 14 can be located at the interface between the readout circuit 100 and the interconnect structure, or it can be located within the interconnect structure, or the interface between the readout circuit 100 and the interconnect structure has a release barrier layer 14 and the interconnect structure also has a release barrier layer 14. The release barrier layer 14 is used to protect the readout circuit 100 from erosion during the etching process to release the sacrificial layer. The release barrier layer 14 includes at least one dielectric layer, and the dielectric material constituting the release barrier layer 14 includes at least one of silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous germanium silicon, silicon, germanium, silicon-germanium alloy, amorphous carbon, or alumina.

[0132] Among them, at least the release barrier layer 14 includes a hollow area, such as Figure 16 As shown at the location of the first interconnect structure 11 on the left side, the release barrier layer 14 and the titanium nitride layer 142 include a hollow area at the corresponding position of the first copper connector 112. The first copper connector 112 is electrically connected to the first connector 111 within this hollow area, and the area of ​​this hollow area is larger than the bottom area of ​​the first copper connector 112. Etching away the release barrier layer 14 first in the process ensures the electrical connection between the first copper connector 112 and the first connector 111, avoiding electrical continuity problems and additional noise issues caused by etching problems.

[0133] Alternatively, the area of ​​the hollowed-out area in the release barrier layer 14 and the titanium nitride layer 142 can be equal to the bottom area of ​​the first copper connection portion 112, such as... Figure 16 As shown at the location of the first interconnect structure 11 on the right side, the first copper connector 112 passes through the release barrier layer 14 and the titanium nitride layer 142 in the hollow area and is electrically connected to the first connector 111. The structural design is simple and does not need to consider the impact of large-area etching of the release barrier layer 14 on the corrosion and damage of the first connector 111.

[0134] In some embodiments, Figure 17 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of this disclosure. (See reference...) Figure 17 The uncooled infrared detector pixel 10 also includes two sacrificial layers 15 located between the release blocking layer 14 and the absorption sensing unit 124.

[0135] For example, the sacrificial layer 15 may be located within the space where the first interconnect structure 11 and the second interconnect structure 12 are located; the sacrificial layer 15 may be released by vapor phase corrosion. Figure 12The image shows the intermediate state of the uncooled infrared detector pixel. The sacrificial layer is used as the process material for preparing the uncooled infrared detector pixel to ensure that the first interconnect structure 11 and the second interconnect structure 12 can be stacked sequentially. The final display state of the uncooled infrared detector pixel is achieved by releasing the hollow structure with the sacrificial layer 15 removed through vapor phase corrosion (refer to the schematic diagram of the uncooled infrared detector pixel provided in the previous embodiment of this disclosure).

[0136] The sacrificial layer 15 may be silicon oxide, and the gaseous corrosive gas may be at least one of hydrogen fluoride, carbon tetrafluoride, and trifluoromethane; or the sacrificial layer 15 may be silicon, and the gaseous corrosive gas may be at least one of silicon tetrafluoride, sulfur hexafluoride, carbon tetrafluoride, and xenon fluoride; or the sacrificial layer 15 may be polyimide (PI), and the gaseous corrosive gas may be at least one of oxygen, ozone, hydrogen fluoride, and hydrogen chloride.

[0137] In some embodiments, the fabrication steps of the first interconnect structure 11 may include: a first step, fabricating a first interconnect, specifically including: depositing a titanium layer and / or a titanium nitride layer, depositing an aluminum layer, depositing another titanium layer and / or a titanium nitride layer, and photolithographically etching to form a patterned first interconnect; or including: after photolithographically etching the pattern, depositing a tantalum layer and / or a copper tantalum nitride layer, depositing a copper layer, and planarizing by chemical mechanical polishing (CMP) to form the first interconnect; a second step, fabricating a first copper interconnect and a second copper interconnect, specifically including: depositing a silicon oxide sacrificial layer, applying photoresist, photolithographically etching the silicon oxide to form a first via, photolithographically etching again to form a second via, depositing a tantalum layer and / or a tantalum nitride layer, depositing a copper layer, and CMP to form the first copper interconnect and the second copper interconnect, while a third copper interconnect is also formed simultaneously; a third step, fabricating a beam structure, specifically including: depositing a second metal layer, photolithographically etching to form a patterned second metal layer structure, depositing an insulating layer, and photolithographically etching the insulating layer and the second metal layer to form a patterned beam structure.

[0138] In some embodiments, the fabrication steps of the second interconnect structure 12 may include: fabricating a fourth copper interconnect and a fifth copper interconnect, specifically including: depositing a silicon oxide sacrificial layer, applying photoresist, photolithographically etching the silicon oxide to form a third via, photolithographically etching the silicon oxide again to form a fourth via, depositing a tantalum layer and / or a tantalum nitride layer, depositing a copper layer, and forming the fourth copper interconnect and the fifth copper interconnect after CMP; fabricating an absorption sensing portion, specifically including: depositing an amorphous silicon thermistor layer, wherein the amorphous silicon thermistor layer deposited in this step is an amorphous silicon thermistor layer with a uniform thickness, and amorphous silicon thermistor layers with different partitions are formed through subsequent steps, forming a dielectric layer on the side of the amorphous silicon thermistor layer away from the readout circuit, performing photolithography and etching on the dielectric layer and the amorphous silicon thermistor layer to pattern and form a structure of a thermistor working area and a non-thermistor working area (wherein, the thermistor working area is a non-thermistor working area). The region has a first thickness, and the non-thermal working region has a second thickness, the first thickness being greater than the second thickness; wherein, the thermistor working region generates a resistance change in response to the received thermal signal. A first metal layer is deposited on the side of the dielectric layer away from the amorphous silicon thermistor layer. Specifically, a first metal layer is formed above the dielectric layer, on the side of the amorphous silicon thermistor layer not covered by the dielectric layer, and above it (i.e., on the side away from other structures formed earlier in the uncooled infrared detection pixel). The first metal layer formed in this step is a whole-layer structure covering the dielectric layer and the amorphous silicon thermistor layer. The first metal layer is photolithographically etched or stripped to form an absorption sensing part (the first metal layer is in contact with the non-thermal working region and at least in contact with the side of the thermistor working region; wherein, a pair of adjacent first metal layers located on the side of the thermistor working region form quasi-parallel electrodes).

[0139] In some embodiments, the method for preparing the uncooled infrared detector pixel may further include: preparing a hollow structure, specifically including: VHF etching of a silicon oxide sacrificial layer.

[0140] In other embodiments, the first interconnection structure and the second interconnection structure in the uncooled infrared detection pixel may also be implemented using other structural forms provided in the embodiments of this application, which are not limited here.

[0141] Based on the above embodiments, this disclosure also provides an uncooled infrared detection chip.

[0142] For example, Figure 18 This is a schematic diagram of the structure of an uncooled infrared detection chip provided in an embodiment of this disclosure. (Reference) Figure 18 The uncooled infrared detection chip 20 may include an array structure composed of multiple uncooled infrared detection pixels 10 provided in any of the above embodiments, and includes a readout circuit 100.

[0143] Based on the above embodiments, this disclosure also provides a mechanism for uncooled infrared detection, which includes any of the uncooled infrared detection chips provided in the above embodiments.

[0144] For example, Figure 19 This is a schematic diagram of the structure of an uncooled infrared detector core provided in an embodiment of this disclosure. (Reference) Figure 19 The mechanism 30 includes an uncooled infrared detection chip 20; the mechanism 30 also includes a lens 31, which is used to focus the infrared signal onto the uncooled infrared detection chip 20 to improve the intensity of the infrared signal and improve the signal-to-noise ratio.

[0145] In other embodiments, the movement 20 may also include other structural and functional components, which are not described in detail or limited herein.

[0146] Based on the above embodiments, this disclosure also provides an uncooled infrared detection device, which may include any of the mechanisms provided in the above embodiments.

[0147] In other embodiments, the uncooled infrared detection device may also include other structural and functional components, which are not described in detail or limited herein.

[0148] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0149] The above description is merely a specific embodiment of this disclosure, enabling those skilled in the art to understand or implement it. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not to be limited to the embodiments described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An uncooled infrared detection pixel, characterized in that, It includes a first interconnect structure and a second interconnect structure, wherein the first interconnect structure connects the second interconnect structure and the readout circuit; The first interconnection structure includes: a first connecting part, a first copper connecting part, a second copper connecting part, and a beam structure; the second interconnection structure includes a third copper connecting part, a fourth copper connecting part, a fifth copper connecting part, and an absorption sensing part. In the first interconnection structure, the two ends of the first copper connection are respectively connected to the first connection and the second copper connection, the first connection is connected to the readout circuit, and the second copper connection is connected to the beam structure; In the second interconnection structure, the two ends of the fourth copper connection are respectively connected to the third copper connection and the fifth copper connection. The third copper connection is connected to the beam structure, and the fifth copper connection is connected to the absorption sensing part. Wherein, at least the second copper connection portion and the third copper connection portion are located on the side of the beam structure facing the readout circuit, and the beam structure is on a flat plane; The absorption sensing unit includes an amorphous silicon thermistor layer and a first metal layer; the first metal layer is located on the side of the amorphous silicon thermistor layer away from the readout circuit and is connected to the fifth copper connection portion. The amorphous silicon thermistor layer includes a thermistor working area and a non-thermistor working area. The thermistor working area has a first thickness, and the non-thermistor working area has a second thickness. The first thickness is greater than the second thickness. The thermistor working area generates a resistance change in response to a received thermal signal. The first metal layer is in contact with the non-thermal working area and at least with the side of the thermal working area; wherein, a pair of adjacent first metal layers located on the side of the thermal working area form quasi-parallel electrodes.

2. The uncooled infrared detection pixel according to claim 1, characterized in that, The first connection portion includes one of an aluminum layer, an aluminum alloy layer, a copper layer, and a copper alloy layer. The first connection portion also includes a titanium layer and / or a titanium nitride layer located on the side of the aluminum layer and / or aluminum alloy layer facing away from and / or towards the readout circuit.

3. The uncooled infrared detection pixel according to claim 2, characterized in that, The first connection portion is the top metal layer of the readout circuit, or the first connection portion is a rewiring layer above the readout circuit; The same-layer structure of the first connection portion serves as the reflective layer of the uncooled infrared detection pixel, and / or the same-layer structure of at least one metal layer in the readout circuit serves as the reflective layer of the uncooled infrared detection pixel.

4. The uncooled infrared detection pixel according to claim 1, characterized in that, In the first interconnection structure, the plane where the first connection portion is located is parallel to the plane where the second copper connection portion is located, and perpendicular to the first copper connection portion; In the second interconnect structure, the plane where the third copper connection portion is located is parallel to the plane where the fifth copper connection portion is located and perpendicular to the fourth copper connection portion; the first interconnect structure is located on the side of the second interconnect structure that is away from or towards the readout circuit; the second copper connection portion in the first interconnect structure and the third copper connection portion in the second interconnect structure are disposed on the same layer.

5. The uncooled infrared detection pixel according to claim 1, characterized in that, The number of copper pillars in the first copper connector and / or the fourth copper connector is one or more.

6. The uncooled infrared detection pixel according to claim 5, characterized in that, The copper connector includes a barrier layer that covers at least the sides and bottom of the copper pillar, and the barrier layer includes a tantalum layer and / or a tantalum nitride layer.

7. The uncooled infrared detection pixel according to claim 6, characterized in that, The first connecting portion, the second copper connecting portion, the third copper connecting portion, and the fifth copper connecting portion all include a copper layer; the copper layer is a pure copper layer or a copper alloy layer; The barrier layer also covers the sides and bottom of the copper layer of the first connecting portion and / or the third copper connecting portion; The copper layer of the second copper connector and the copper pillar of the first copper connector are an integral copper structure, the copper layer of the fifth copper connector and the copper pillar of the fourth copper connector are an integral copper structure, and the barrier layer covers the sides and bottom of the integral copper structure.

8. The uncooled infrared detection pixel according to claim 1, characterized in that, It also includes a first protective layer that covers the exposed surfaces of the interconnect structure and / or the readout circuit, the first protective layer serving at least to provide insulation protection for the interconnect structure and / or the readout circuit.

9. The uncooled infrared detection pixel according to claim 1, characterized in that, The thermal working area includes a first bottom and a first top opposite each other, and the non-thermal working area includes a second bottom and a second top opposite each other; The first bottom and the second bottom are located on the same plane, and the height of the first top is greater than the height of the second top.

10. The uncooled infrared detection pixel according to claim 1, characterized in that, The non-thermal working area is thinned to the second thickness by etching.

11. The uncooled infrared detection pixel according to claim 1, characterized in that, The material of the first metal layer located in the non-thermal working area diffuses into the non-thermal working area, increasing the area of ​​the quasi-parallel electrode. The effective value of the second thickness of the non-thermal working area does not include the thickness diffused into by the first metal layer.

12. The uncooled infrared detection pixel according to claim 1, characterized in that, The absorption sensing unit also includes a dielectric layer; The dielectric layer covers the thermistor working area of ​​the amorphous silicon thermistor layer; and the dielectric layer is located between the first metal layer and the amorphous silicon thermistor layer.

13. The uncooled infrared detection pixel according to claim 1, characterized in that, The absorption sensing unit also includes a second protective layer; The second protective layer is located on the side of the amorphous silicon thermistor layer opposite to the first metal layer, and / or on the side of the first metal layer opposite to the amorphous silicon thermistor layer.

14. The uncooled infrared detection pixel according to claim 1, characterized in that, The absorption sensing part further includes a through hole; the through hole extends through the absorption sensing part in the thickness direction.

15. The uncooled infrared detection pixel according to claim 1, characterized in that, The beam structure includes at least an insulating layer and a second metal layer; the second metal layer is located on the side of the insulating layer facing or away from the readout circuit, and is connected to at least the second copper connection portion and the third copper connection portion; The fourth copper connector passes through the insulating layer and is electrically connected to the third copper connector.

16. The uncooled infrared detection pixel according to claim 1, characterized in that, It also includes at least one release barrier layer, which is located at least on the side of the readout circuit facing the absorption sensing part; the first copper connection portion passes through the release barrier layer and is electrically connected to the first connection portion.

17. The uncooled infrared detection pixel according to claim 16, characterized in that, It also includes two sacrificial layers located between the release barrier layer and the absorption sensing unit.

18. An uncooled infrared detection chip, characterized in that, It includes an array structure consisting of multiple uncooled infrared detector pixels as described in any one of claims 1-17 and the readout circuit.

19. A mechanism for uncooled infrared detection, characterized in that, The mechanism includes the uncooled infrared detection chip as described in claim 18; the mechanism also includes a lens for focusing infrared signals onto the uncooled infrared detection chip.

20. An uncooled infrared detection device, characterized in that, The uncooled infrared detection device includes the mechanism as described in claim 19.

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