Testing of photoresist pattern structure and photoresist material fabrication process capability verification system

Abstract

This invention discloses a photoresist pattern structure for testing and a photoresist material process capability verification system, relating to the field of exposure testing technology. The photoresist pattern structure for testing includes a mask structure body with adjacent first and second exposure areas. The first exposure area has an exposure window that corresponds to an energy level gauge. The second exposure area has multiple resolution pattern blocks with different linewidths. Compared to existing technologies, this invention can perform multiple energy level gauge verifications on the same test board and accurately determine the resolution capability at the current energy density through specially designed patterns, quickly verifying the technical specifications of the photoresist material.

Description

Technical Field

[0001] This utility model relates to the field of exposure testing technology, and more specifically, to a photoresist pattern structure for testing and a photoresist material process capability verification system. Background Technology

[0002] In the circuit board manufacturing process, the image transfer process is one of the most critical steps, affecting product yield and efficiency. During circuit board production, each exposure machine needs to confirm the technical specifications of the photosensitive material every shift to prevent quality abnormalities.

[0003] The traditional method involves attaching a photosensitive material to the surface of a PCB, placing an energy level gauge on top of the material, irradiating the board with UV light of a certain energy, allowing it to stand for an appropriate time, and finally developing it with a weakly alkaline solution before taking a reading. This ensures the energy level meets the material manufacturer's specifications and is then applied to mass-produced boards. If the reading deviates from the range, the energy density needs to be reconfirmed to obtain the optimal process parameters.

[0004] Because this method relies on experience and requires multiple tests for confirmation, only one energy density verification can be completed on a single test board. If three energy density verifications are needed, it would take at least three hours to complete, resulting in low efficiency. Furthermore, the technical specifications of the photoresist material cannot be directly observed. Utility Model Content

[0005] The purpose of this invention is to provide a photoresist pattern structure for testing and a photoresist material process capability verification system, which can complete multiple energy scale verifications on the same test board, improve testing efficiency, and accurately determine the resolution capability at the current energy density through specially designed patterns, thereby quickly verifying the technical indicators of the photoresist material.

[0006] The embodiments of this utility model are implemented as follows: In one aspect, this utility model provides a photoresist pattern structure for testing, used to expose multiple preset areas of the material layer to be tested sequentially under different exposure energies. The photoresist pattern structure for testing includes a mask structure body, on which a first exposure area and a second exposure area are arranged adjacently. The first exposure area is provided with an exposure window and is used to be set in correspondence with an energy scale. The second exposure area is provided with multiple analytical pattern blocks with different line widths.

[0007] In an optional embodiment, the first exposure area and the second exposure area are arranged adjacent to each other along a first direction, and a plurality of the analytical pattern blocks are linearly distributed in the second exposure area along a second direction, wherein the first direction and the second direction are perpendicular to each other.

[0008] In an optional implementation, each of the analytical pattern blocks includes multiple concentrically nested ring lines, the line widths of the multiple ring lines in the same analytical pattern block are the same, and the line widths of the ring lines in the multiple analytical pattern blocks gradually decrease along the second direction.

[0009] In an optional implementation, the linewidth difference of the ring lines in two adjacent analytical pattern blocks is between 4 μm and 6 μm.

[0010] In an optional implementation, the linewidth of the loop line in each of the analytical pattern blocks is between 60 μm and 100 μm.

[0011] In an optional implementation, the annular line is a regular octagon.

[0012] In an optional implementation, the line spacing between adjacent ring lines in the same analytical pattern block is the same, and the line spacing of the ring lines in multiple analytical pattern blocks gradually decreases along the second direction.

[0013] In an optional implementation, the line width and spacing of the loop lines in the same analytical pattern block are the same.

[0014] In an optional embodiment, the mask structure body is rectangular, both the first exposure area and the second exposure area are rectangular, and the width of the mask structure body along the first direction is between 20-40 mm, and the width of the mask structure body along the second direction is between 90-110 mm.

[0015] Secondly, this utility model provides a photoresist material process capability verification system, including an exposure machine, an energy ruler, and the aforementioned photoresist pattern structure for testing. The exposure machine has a placement stage for placing a test plate coated with a material layer to be tested and an exposure slit for emitting light. The exposure slit is located above the placement stage. The mask structure body is disposed on the surface of the exposure slit or the material layer to be tested, and the energy ruler is correspondingly disposed on the exposure window of the mask structure body.

[0016] The beneficial effects of this utility model embodiment include: The photoresist pattern structure and photoresist material process capability verification system provided in this embodiment can be divided into a first exposure area and a second exposure area on the mask structure body. The first exposure area is provided with an exposure window, which can be set to correspond to an energy level. The second exposure area is provided with multiple resolution pattern blocks with different linewidths. In actual testing, the mask structure body can be used as a mask to align with the first preset area of ​​the material layer under test, and the energy level is placed in the area corresponding to the exposure window, and then the first exposure is performed. Then, the mask structure body is used as a mask to align with the next preset area of ​​the material layer under test, and the energy level is moved to the area of ​​the exposure window, and then the second exposure is performed. Then, the third, fourth, and so on, multiple exposures are performed, each with a different energy level. After multiple exposures, development is performed. After exposure, the energy level can be read, and the resolution capability at the current energy density can be quickly and intuitively confirmed through the resolution pattern blocks with different linewidths. Therefore, compared with the prior art, this invention can complete multiple energy level confirmations on the same test board, and accurately determine the resolution capability at the current energy density through specially designed patterns, quickly verifying the technical indicators of the photoresist material. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 A schematic diagram of the photoresist pattern structure for testing provided in this embodiment of the present invention; Figure 2 for Figure 1 A magnified view of a section at point II; Figure 3 A schematic diagram showing the correspondence between the test photoresist pattern structure and the energy ruler provided in this embodiment of the utility model; Figure 4 A partial structural schematic diagram of the photoresist material process capability verification system provided in this embodiment of the utility model.

[0019] icon: 100 - Photoresist pattern structure for testing; 110 - Mask structure body; 120 - First exposure area; 130 - Second exposure area; 140 - Exposure window; 150 - Resolution pattern block; 151 - Circular line; 200 - Energy ruler; 300 - Placement stage; 310 - Test plate; 330 - Material layer to be tested; 400 - Exposure slit. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. The components of the embodiments of this utility model described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0021] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0022] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0023] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this utility model is in use. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first," "second," and "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0024] Furthermore, terms such as "horizontal" and "vertical" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," not that the structure must be completely horizontal, but can be slightly tilted.

[0025] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0026] As disclosed in the background section, existing material verification methods typically involve attaching a photosensitive material, placing an energy level 200 on top, and then exposing the entire photosensitive material layer to UV light for exposure. After development, a calibration reading is taken. The material is then applied to mass-produced boards only if the reading meets the energy range specified in the manufacturer's technical specifications. However, when the calibration reading exceeds the range, the energy density needs to be reconfirmed. This reconfirmation requires multiple tests, and conventional methods can only complete one energy density verification using the energy level 200 on a single test board 310 (taking approximately 1 hour). If three energy density verifications are required, it would take at least three hours, resulting in low efficiency. Furthermore, the technical indicators related to the photoresist material (such as adhesion and lateral etching) cannot be directly observed during verification.

[0027] To address the aforementioned issues, this utility model provides a novel photoresist pattern structure 100 for testing and a photoresist material process capability verification system. The structure, working principle, and usage of the pattern structure and verification system are described in detail below.

[0028] See Figures 1 to 3 This utility model provides a photoresist pattern structure 100 for testing, which can complete multiple energy scale 200 confirmations on the same test board 310, improve testing efficiency, and accurately determine the resolution under the current energy density through a specially designed pattern, thus quickly verifying the technical indicators of the photoresist material.

[0029] The photoresist pattern structure 100 provided in this embodiment of the present invention is used to expose multiple preset areas of the material layer to be tested sequentially under different exposure energies. The photoresist pattern structure 100 includes a mask structure body 110, on which a first exposure area 120 and a second exposure area 130 are arranged adjacently. The first exposure area 120 is provided with an exposure window 140 and is used to correspond to an energy ruler 200. The second exposure area 130 is provided with multiple analytical pattern blocks 150 with different line widths.

[0030] In actual testing, the mask structure body 110 can be used as a mask, aligned with the first preset area of ​​the material layer under test, and the energy ruler 200 can be placed in the corresponding area of ​​the exposure window 140 for the first exposure. Then, the mask structure body 110 can be used as a mask, aligned with the next preset area of ​​the material layer under test, and the energy ruler 200 can be moved to the area of ​​the exposure window 140 for the second exposure. This is followed by a third, fourth, and subsequent exposures, each with a different energy. After multiple exposures, development is performed. After exposure, the energy ruler 200 can be read, and the resolution capability at the current energy density can be quickly and intuitively confirmed using resolution pattern blocks 150 with different linewidths. Therefore, multiple energy ruler 200 confirmations can be performed on the same test board 310, improving testing efficiency. Through specially designed patterns, the resolution capability at the current energy density can be accurately determined, and the technical specifications of the photoresist material can be quickly verified.

[0031] In some embodiments, the first exposure region 120 and the second exposure region 130 are arranged adjacent to each other along a first direction, and a plurality of analytical pattern blocks 150 are linearly distributed in the second exposure region 130 along a second direction, wherein the first direction and the second direction are perpendicular to each other. Both the first direction and the second direction are horizontal directions, and the first exposure region 120 and the second exposure region 130 are partitions of one side surface of the mask structure body 110 perpendicular to the optical path. Furthermore, the size of the exposure window 140 can be smaller than or equal to the size of the first exposure region 120, and the plurality of analytical pattern blocks 150 can be uniformly distributed in the second exposure region 130 along the second direction, with the pattern shape of each analytical pattern block 150 penetrating the mask structure body 110.

[0032] In some embodiments, each analytical pattern block 150 includes a plurality of concentrically nested annular lines 151. The line widths of the annular lines 151 within the same analytical pattern block 150 are the same, and the line widths of the annular lines 151 within the plurality of analytical pattern blocks 150 gradually decrease along a second direction. Specifically, the size of the plurality of annular lines 151 within the same analytical pattern block 150 increases from the inner to the outer components, thereby forming a layered annular structure. Simultaneously, the line widths of the plurality of analytical pattern blocks 150 gradually decrease along the second direction, thereby enabling graphic testing with different line widths and facilitating subsequent intuitive verification of analytical capabilities.

[0033] It should be noted that the line width mentioned in this embodiment refers to the width of the ring line 151, which constitutes the pattern of the second exposure area 130. Within the same analytical pattern block 150, the line width of the ring line 151 from the inside out is the same, thereby ensuring the uniformity of the same analytical pattern block 150 and facilitating subsequent detection and verification.

[0034] In some embodiments, the linewidth difference of the loop lines 151 in two adjacent analytical pattern blocks 150 is between 4 μm and 6 μm. Specifically, the linewidth difference of the loop lines 151 in two adjacent analytical pattern blocks 150 is 5 μm, that is, in the second direction, the linewidth of the plurality of analytical pattern blocks 150 decreases by 5 μm. Of course, the linewidth difference here is only an example and does not serve as a limitation.

[0035] In some embodiments, the linewidth of the loop line 151 in each analytical pattern block 150 is between 60 μm and 100 μm. Specifically, there can be nine analytical pattern blocks 150, which are distributed sequentially along the second direction. The linewidth of the loop line 151 in the first analytical pattern block 150 is 100 μm, the second is 95 μm, the third is 90 μm, the fourth is 85 μm, the fifth is 80 μm, the sixth is 75 μm, the seventh is 70 μm, the eighth is 65 μm, and the ninth is 60 μm, covering the mainstream linewidth range and resulting in better measurement performance.

[0036] In some embodiments, the loop line 151 is a regular octagon. Specifically, each loop line 151 is a regular octagon, encompassing straight sides, obtuse-angled sides, and other structures, which can better reflect the actual wiring structure.

[0037] In some embodiments, the line spacing between adjacent loop lines 151 in the same analytical pattern block 150 is the same, and the line spacing of loop lines 151 in multiple analytical pattern blocks 150 gradually decreases along the second direction. Specifically, the line spacing here refers to the distance between adjacent loop lines 151, and the line spacing also gradually decreases, which enables graphic testing with different line spacings, facilitating subsequent intuitive verification of analytical capabilities.

[0038] Furthermore, the line width and spacing of the ring lines 151 within the same analytical pattern block 150 are identical. Specifically, the identical line width and spacing allow for better assessment of analytical capabilities and rapid verification of the technical specifications of the material layer under test. By designing ring patterns with different line widths and spacings of regular octagonal shapes, it is possible to quickly identify the bonding strength, analytical line width and spacing, and lateral etching conditions of the photoresist material at the current energy density, providing a basis for production.

[0039] In some embodiments, the mask structure body 110 is rectangular, the first exposure area 120 and the second exposure area 130 are both rectangular, and the width of the mask structure body 110 along the first direction is between 20-40 mm, and the width of the mask structure body 110 along the second direction is between 90-110 mm. Preferably, the width of the mask structure body 110 along the first direction is 30 mm and the width in the second direction is 100 mm, thereby enabling a single exposure of a 100*30 mm rectangular preset area, and arranging multiple preset areas on the material layer to be tested for exposure at different energies. Furthermore, the first exposure area 120 and the second exposure area 130 can both be 15 mm, or the width of the first exposure area 120 can be greater than the width of the second exposure area 130. It should be noted that the width of the first exposure area 120 here needs to be greater than or equal to the width of the energy ruler 200.

[0040] See Figure 4 This utility model embodiment also provides a photoresist material process capability verification system, including an exposure machine, an energy scale 200, and the aforementioned photoresist pattern structure 100 for testing. The exposure machine has a stage 300 for placing a test plate 310 coated with a material layer 330 to be tested, and an exposure slit 400 for emitting light. The exposure slit 400 is located above the stage 300. A mask structure body 110 is disposed on the surface of the exposure slit 400 or the material layer 330 to be tested. The energy scale 200 is correspondingly disposed on the exposure window 140 of the mask structure body 110. The exposure machine can be an LDI exposure machine, the exposure slit 400 is used to emit UV light, and the material layer to be tested can be a photoresist material layer. The energy scale 200 can be a 21-grid exposure energy scale 200, and its structure and working principle can refer to existing energy scales 200.

[0041] It should be noted that in this embodiment, the photoresist pattern structure 100 is used in conjunction with an LDI exposure machine. During UV irradiation, only a 100*30mm area needs to be irradiated (the energy ruler 200 is placed in a designated position). After multiple irradiations at different energies, and with the position of the energy ruler 200 being changed accordingly, multiple energy ruler 200 confirmations can be completed on the same test board 310. After the development process, the resolution capability at the current energy density can be accurately determined through the specially designed resolution pattern block 150, including adhesion, line width and line spacing, and side etching conditions. A single test can quickly identify the technical indicators of the photoresist material in a maximum of one hour, greatly improving testing efficiency and making the test more intuitive.

[0042] It should be noted that the photoresist pattern structure 100 used for testing here can be a mask, which can be installed at the exposure slit 400 of the exposure machine or on the test plate 310; at the same time, the photoresist pattern structure 100 used for testing can also be a pattern built into the exposure machine, that is, a data card with built-in programs, which can change the light output pattern during exposure. The effect achieved by both is the same.

[0043] The photoresist pattern structure 100 and photoresist material process capability verification system provided in this embodiment of the invention allow for the following steps: First, photoresist material is coated / attached onto a test plate 310. Then, in an exposure machine, the test plate 310 is divided into multiple 100*30mm rectangular preset areas using a coordinate system. Next, the photoresist pattern structure 100 is set up, and the mask structure body 110 is integrated with the exposure machine, allowing light to be emitted through the mask structure body 110. After preparation, the energy scale 200 is placed in the first preset area corresponding to the exposure window 140, and the exposure energy is adjusted for the first exposure. Then, the energy scale 200 is placed in the second preset area corresponding to the exposure window 140, and the exposure energy is adjusted for the second exposure. After exposure, the energy scale can be read, and multiple exposures are performed before development. Finally, the resolution capability at the current energy density is quickly and intuitively confirmed using regular octagonal ring lines 151 with different linewidths and spacings. The analysis and verification of resolution capability here are consistent with conventional techniques and will not be described in detail here.

[0044] In summary, the photoresist pattern structure 100 and photoresist material process capability verification system provided by this embodiment of the invention can be divided into a first exposure area 120 and a second exposure area 130 on the mask structure body 110. The first exposure area 120 is provided with an exposure window 140, which can be correspondingly set with an energy ruler 200. The second exposure area 130 is provided with multiple analytical pattern blocks 150 with different linewidths. In actual testing, the mask structure body 110 can be used as a mask to align with the first preset area of ​​the material layer under test, and the energy ruler 200 can be placed in the area of ​​the exposure window 140, and then the first exposure is performed. Then, the mask structure body 110 can be used as a mask to align with the next preset area of ​​the material layer under test, and the energy ruler 200 can be moved to the area of ​​the exposure window 140, and then the second exposure is performed. Then, the third, fourth, and subsequent exposures are performed, each with a different exposure energy. After multiple exposures, development is performed. After exposure, the energy scale 200 can be read, and the resolution capability at the current energy density can be quickly and intuitively confirmed using resolution pattern blocks 150 with different line widths. Therefore, compared with the prior art, this invention can complete multiple energy scale 200 confirmations on the same test board 310, and accurately determine the resolution capability at the current energy density through specially designed patterns, thus quickly verifying the technical specifications of the photoresist material.

[0045] The above description is merely a preferred embodiment of this utility model and is not intended to limit the utility model. Various modifications and variations can be made to this utility model by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.

Claims

1. A photoresist pattern structure for testing, used to expose multiple preset regions corresponding to a layer of material under test sequentially at different exposure energies, characterized in that, The photoresist pattern structure for testing includes a mask structure body, on which a first exposure area and a second exposure area are arranged adjacently. The first exposure area is provided with an exposure window and is used to correspond to the energy scale. The second exposure area is provided with multiple analytical pattern blocks with different line widths.

2. The photoresist pattern structure for testing according to claim 1, characterized in that, The first exposure area and the second exposure area are arranged adjacent to each other along a first direction, and a plurality of the analytical pattern blocks are linearly distributed in the second exposure area along a second direction, wherein the first direction and the second direction are perpendicular to each other.

3. The photoresist pattern structure for testing according to claim 2, characterized in that, Each of the analytical pattern blocks includes multiple concentric ring lines, the line width of the multiple ring lines in the same analytical pattern block is the same, and the line width of the ring lines in the multiple analytical pattern blocks gradually decreases along the second direction.

4. The photoresist pattern structure for testing according to claim 3, characterized in that, The linewidth difference of the ring lines in two adjacent analytical pattern blocks is between 4μm and 6μm.

5. The photoresist pattern structure for testing according to claim 3, characterized in that, The line width of the looped lines in each of the analytical pattern blocks is between 60 μm and 100 μm.

6. The photoresist pattern structure for testing according to claim 3, characterized in that, The ring-shaped line is a regular octagon.

7. The photoresist pattern structure for testing according to claim 3, characterized in that, The spacing between adjacent ring lines in the same analytical pattern block is the same, and the spacing between the ring lines in multiple analytical pattern blocks gradually decreases along the second direction.

8. The photoresist pattern structure for testing according to claim 6, characterized in that, The line width and spacing of the circular lines in the same analytical pattern block are the same.

9. The photoresist pattern structure for testing according to claim 2, characterized in that, The mask structure body is rectangular, both the first exposure area and the second exposure area are rectangular, and the width of the mask structure body along the first direction is between 20-40mm, and the width of the mask structure body along the second direction is between 90-110mm.

10. A process capability verification system for photoresist materials, characterized in that, The invention includes an exposure machine, an energy ruler, and a photoresist pattern structure for testing as described in any one of claims 1-9. The exposure machine has a stage for placing a test plate coated with a layer of material to be tested and an exposure slit for emitting light. The exposure slit is located above the stage. The mask structure body is disposed on the surface of the exposure slit or the layer of material to be tested. The energy ruler is correspondingly disposed on the exposure window of the mask structure body.

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