A reaction chamber device and semiconductor apparatus
Patent Information
- Application Number
- CN202521294981.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-24
- Publication Date
- 2026-09-01
- Estimated Expiration
- 2035-06-24
AI Technical Summary
[0004]本实用新型的一个目的在于提供一种反应腔室装置，其能够解决相关技术中反应腔室内的等离子体扩散不均匀的问题
[0023]本实用新型所提供的反应腔室装置，其包括第一反应腔室和第二反应腔室，第一反应腔室与第二反应腔室之间通过至少两层格栅连通，第一反应腔室内的等离子体通过至少两层格栅扩散至第二反应腔室。等离子体在从第一反应腔室向第二反应腔室扩散的过程中，经过至少两层格栅将等离子体中的正负带电离子接地导走，从而实现只有自由基到达第二反应腔室。进一步地，通过在每层格栅上设置扩散孔，并分别以第一密度和第二密度均匀分布在格栅上，从而实现等离子体能够通过至少两层格栅均匀扩散，从而实现均匀地扩散到晶圆表面上进行去胶反应。通过提高反应腔室内等离子体扩散的均匀性，从而提高晶圆表面去胶均匀性，提高半导体设备的加工质量。
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Figure CN224708762U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor processing technology, and in particular to a reaction chamber device and semiconductor equipment. Background Technology
[0002] Dry photoresist removal in semiconductor manufacturing involves using a plasma photoresist remover to remove residual photoresist from the wafer surface through plasma oxidation or decomposition. This ensures that no residual photoresist remains on the wafer surface, thus avoiding any impact on subsequent integrated circuit chip manufacturing processes.
[0003] In related technologies, plasma resist strippers with two stages within the reaction chamber often struggle to guarantee uniform plasma diffusion, thus affecting the uniformity of resist removal. "Uniformity" refers to the uniformity of plasma concentration distribution as it diffuses onto the wafer surface within the process chamber. A uniform plasma concentration distribution allows for a more uniform reaction between the plasma and the photoresist on the wafer surface, thereby achieving uniform resist removal. Utility Model Content
[0004] One objective of this invention is to provide a reaction chamber device that can solve the problem of uneven plasma diffusion within the reaction chamber in related technologies.
[0005] To achieve this objective, the present invention adopts the following technical solution:
[0006] A reaction chamber device is provided, comprising a first reaction chamber and a second reaction chamber;
[0007] The first reaction chamber and the second reaction chamber are connected by at least two layers of grids, and the plasma in the first reaction chamber extends to the second reaction chamber through the at least two layers of grids.
[0008] Each layer of the grid is provided with diffusion holes, which are uniformly distributed at the center of the grid with a first density and at the edge of the grid with a second density, wherein the first density is less than the second density.
[0009] In one embodiment, the at least two layers of grids include x grids, the center points of the x grids are on the same vertical line, the x grids are distributed sequentially from top to bottom between the first reaction chamber and the second reaction chamber, and the i-th grid of the x grids is above the (i+1)-th grid;
[0010] The diameter of the first grid in the x grids is greater than or equal to the diameter of the first reaction chamber, and the first grid is the grid closest to the first reaction chamber;
[0011] The diameter of the (i+1)th grid is greater than or equal to the diameter of the ith grid;
[0012] The diameter of the last grid in the x grids is less than or equal to the diameter of the second reaction chamber, and the last grid is the grid closest to the second reaction chamber;
[0013] Where x is an integer greater than 1, and i is a positive integer less than or equal to x-1.
[0014] In one embodiment, the diffusion holes are distributed in a first region of the i-th grid, and the center point of the first region is on the same vertical line as the center point of the i-th grid;
[0015] The diffusion holes are distributed in the second region of the (i+1)th grid, and the center point of the second region is on the same vertical line as the center point of the (i+1)th grid.
[0016] The radius of the first region is less than or equal to the radius of the second region.
[0017] In one embodiment, the diffusion holes on the i-th grid are misaligned with the diffusion holes on the (i+1)-th grid.
[0018] In one embodiment, a buffer gap is provided between the i-th grid and the (i+1)-th grid, the buffer gap being used to buffer plasma diffusing from the i-th grid to the (i+1)-th grid.
[0019] Another objective of this invention is to provide a semiconductor device that has a reaction chamber device that can solve the problem of uneven plasma diffusion in the reaction chamber in related technologies, thereby improving the processing quality of the semiconductor device.
[0020] To achieve this objective, the present invention employs the following technical solution in another aspect:
[0021] A semiconductor device is provided, including the reaction chamber device as described above.
[0022] The beneficial effects of this utility model are:
[0023] The reaction chamber device provided by this utility model includes a first reaction chamber and a second reaction chamber, which are connected by at least two layers of grids. Plasma in the first reaction chamber diffuses into the second reaction chamber through the at least two layers of grids. During the diffusion of plasma from the first reaction chamber to the second reaction chamber, the positive and negative charged ions in the plasma are grounded and conducted away by the at least two layers of grids, thereby ensuring that only free radicals reach the second reaction chamber. Furthermore, by providing diffusion holes on each layer of grids and uniformly distributing them on the grids at a first density and a second density, the plasma can diffuse uniformly through the at least two layers of grids, thereby achieving uniform diffusion onto the wafer surface for resist removal. By improving the uniformity of plasma diffusion within the reaction chamber, the uniformity of resist removal on the wafer surface is improved, thus improving the processing quality of semiconductor equipment.
[0024] The semiconductor equipment provided by this utility model includes the above-mentioned reaction chamber device, which can ensure the uniformity of plasma diffusion in the reaction chamber, thereby improving the uniformity of resist removal on the wafer surface and improving the processing quality of the semiconductor equipment. Attached Figure Description
[0025] Figure 1 This is a structural cross-sectional view of the reaction chamber device provided in this embodiment of the utility model;
[0026] Figure 2 This is a schematic diagram of the reaction chamber device provided in an embodiment of the present invention;
[0027] Figure 3 This is a structural cross-sectional view of the reaction chamber device provided in this embodiment of the utility model;
[0028] Figure 4 This is a schematic diagram of the structure of the first grille provided in an embodiment of the present utility model;
[0029] Figure 5 This is a schematic diagram illustrating the working principle of the second grille provided in this embodiment of the present invention.
[0030] In the picture:
[0031] 1. First reaction chamber; 2. Second reaction chamber; 3. Grille; 4. Diffuser hole; 31. First grille; 32. Second grille; 311. First region; 321. Second region; 5. Buffer gap. Detailed Implementation
[0032] The technical solution of this utility model will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.
[0033] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this utility model and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The terms "first position" and "second position" refer to two different positions. Moreover, "above," "on top of," and "over" the first feature in relation to the second feature includes the first feature directly above and diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "under," and "below" the first feature in relation to the second feature includes the first feature directly below and diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0034] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0035] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.
[0036] Figure 1A schematic diagram of a reaction chamber device is shown. The device includes a first reaction chamber 1 and a second reaction chamber 2. The first reaction chamber 1 and the second reaction chamber 2 are connected by at least two layers of grids 3. Plasma in the first reaction chamber 1 diffuses into the second reaction chamber 2 through these grids. During the diffusion of plasma from the first reaction chamber 1 to the second reaction chamber 2, the at least two layers of grids 3 conduct the positive and negative charged ions in the plasma to the ground, ensuring that only free radicals reach the second reaction chamber 2, which helps to guarantee the uniformity of subsequent adhesive removal.
[0037] Furthermore, by providing diffusion holes 4 on each layer of grid 3, the diffusion holes 4 are uniformly distributed at the center of the grid 3 with a first density, and uniformly distributed at the edge of the grid 3 with a second density, where the first density is less than the second density. That is, the density of the diffusion holes 4 at the center of each layer of grid 3 is small, and the density of the diffusion holes 4 at the edge is large.
[0038] Because plasma typically diffuses at a higher velocity at the center than at the edges when diffusing through the grid 3, this invention employs a method where the density of the diffusion holes 4 at the center of the grid 3 is low to suppress the diffusion velocity at the center, while the density of the diffusion holes 4 at the edges of the grid 3 is high to increase the diffusion velocity at the edges. By setting different densities for the diffusion holes 4 at different locations, the uniformity of plasma diffusion through the grid 3 is ensured.
[0039] It should be noted that, in order to further ensure the degumming rate, the reaction chamber device in this invention is designed using a 12-inch dual-chamber structure as an example. For example, as shown... Figure 2 As shown.
[0040] In some embodiments, at least two layers of grids 3 include x grids 3, the center points of the x grids 3 are on the same vertical line, the x grids 3 are distributed sequentially from top to bottom between the first reaction chamber 1 and the second reaction chamber 2, and the i-th grid 3 of the x grids 3 is above the (i+1)-th grid 3.
[0041] In some embodiments, the diameter of the first grid 3 among the x grids 3 is greater than or equal to the diameter of the first reaction chamber 1, and the first grid 3 is the grid 3 closest to the first reaction chamber 1; the diameter of the (i+1)th grid 3 is greater than or equal to the diameter of the ith grid 3; the diameter of the last grid 3 among the x grids 3 is less than or equal to the diameter of the second reaction chamber 2, and the last grid 3 is the grid 3 closest to the second reaction chamber 2. By sequentially increasing the diameter of the grids 3, it is beneficial to improve the stability of the plasma during top-to-bottom diffusion. Normally, during diffusion, plasma tends to diffuse from narrow channels to larger channels, but not easily from larger channels to smaller channels.
[0042] For example, such as Figure 3 As shown, taking x=2 and i=1 as an example, the first reaction chamber 1 and the second reaction chamber 2 are connected by two layers of grids 3 (first grid 31 and second grid 32). The plasma in the first reaction chamber 1 diffuses to the second reaction chamber 2 through the two layers of grids 3. The center points of the first grid 31 and the second grid 32 are on the same vertical line. The first grid 31 is above the second grid 32, or it can be understood that the first grid 31 is closest to the first reaction chamber 1, and the second grid 32 is closest to the second reaction chamber 2.
[0043] In some embodiments, diffusion holes 4 are distributed in the first region 311 of the i-th grid 3, and the center point of the first region 311 is on the same vertical line as the center point of the i-th grid 3; diffusion holes 4 are distributed in the second region 321 of the (i+1)-th grid 3, and the center point of the second region 321 is on the same vertical line as the center point of the (i+1)-th grid 3; the radius of the first region 311 is less than or equal to the radius of the second region 321. Consistent with the reasons for setting different diameters of the grids 3 as described above, by setting the area of the diffusion holes 4 on the (i+1)-th grid 3 to be larger than the area of the diffusion holes 4 on the i-th grid 3, it is beneficial to improve the stability of plasma diffusion from top to bottom. During diffusion, plasma easily diffuses from narrow channels to larger channels, but does not easily diffuse from larger channels to smaller channels.
[0044] In some embodiments, the diffusion holes 4 on the i-th grid 3 are staggered with those on the (i+1)-th grid 3. By staggering the diffusion holes 4 on adjacent grids 3, it is ensured that the plasma does not pass directly through the holes when diffusing from the i-th grid 3 to the (i+1)-th grid 3. By reducing the probability of the plasma directly passing through the grid 3, the probability of positive and negative charged ions in the plasma being grounded is increased, further increasing the possibility that only free radicals reach the second reaction chamber 2, thereby helping to ensure the uniformity of subsequent degumming.
[0045] In some embodiments, a buffer gap 5 is provided between the i-th grid 3 and the (i+1)-th grid 3. The buffer gap 5 is used to buffer the plasma diffusing from the i-th grid 3 to the (i+1)-th grid 3. Consistent with the reason for the staggered distribution of the diffusion holes 4 on adjacent grids 3, by providing a buffer gap 5 between adjacent grids 3, the plasma can be buffered in the buffer gap 5 when diffusing from the i-th grid 3 to the (i+1)-th grid 3. This reduces the probability that the plasma will directly pass through the grid 3, thereby increasing the probability that positive and negative charged ions in the plasma will be grounded and conducted away. This further increases the possibility that only free radicals will reach the second reaction chamber 2, which is beneficial to ensuring the uniformity of subsequent degumming.
[0046] In some embodiments, x is an integer greater than 1, and i is a positive integer less than or equal to x-1.
[0047] For example, such as Figure 3 As shown, both the first grille 31 and the second grille 32 are provided with diffusion holes 4. Wherein, as... Figure 4 As shown, the diffusion holes 4 on the first grid 31 are uniformly distributed at the center of the first grid 31 with a first density, and uniformly distributed at the edge of the first grid 31 with a second density. Figure 5 As shown, the diffusion holes 4 on the second grid 32 are uniformly distributed at the center of the second grid 32 with a first density, and uniformly distributed at the edge of the second grid 32 with a second density. The first density is less than the second density.
[0048] It should be noted that, in this embodiment of the present invention, taking the uniform distribution density of the diffusion holes 4 on different grids 3 as an example, in some possible embodiments, the density of the diffusion holes 4 on different grids 3 may be different. For example, the diffusion holes 4 on the first grid 31 are uniformly distributed at the center of the first grid 31 with a first density and at the edge of the first grid 31 with a second density, where the first density is less than the second density. The diffusion holes 4 on the second grid 32 are uniformly distributed at the center of the second grid 32 with a third density and at the edge of the second grid 32 with a fourth density, where the third density is less than the fourth density. Optionally, the first density is equal to the third density, and / or the second density is equal to the fourth density; this is not limited in this embodiment of the present invention.
[0049] Optionally, the diffusion holes 4 on the first grille 31 are distributed within a first region 311 of the first grille 31, and the center point of the first region 311 is on the same vertical line as the center point of the first grille 31. The diffusion holes 4 on the second grille 32 are distributed within a second region 321 of the second grille 32, and the center point of the second region 321 is on the same vertical line as the center point of the second grille 32. The radius of the first region 311 is less than or equal to the radius of the second region 321.
[0050] Optionally, the diameter of the first grid 31 is greater than or equal to the diameter of the first reaction chamber 1. The diameter of the second grid 32 is greater than or equal to the diameter of the first grid 31. The diameter of the second grid 32 is less than or equal to the diameter of the second reaction chamber 2.
[0051] Optionally, the diffuser holes 4 on the first grille 31 and the diffuser holes 4 on the second grille 32 are staggered.
[0052] Optionally, a buffer gap 5 is provided between the first grid 31 and the second grid 32, the buffer gap 5 being used to buffer plasma diffusing from the first grid 31 to the second grid 32.
[0053] By comparing the three configurations of the reaction chamber devices (reaction chamber device without grid, reaction chamber device with single-layer grid, and reaction chamber device with double-layer grid), it can be seen that the reaction chamber device with double-layer grid can preferentially reduce the ion current density, thereby effectively avoiding ion damage, improving the uniformity of plasma diffusion within the reaction chamber, and thus improving the uniformity of resist removal on the wafer surface and the processing quality of semiconductor equipment. For example, the comparison results are shown in Table 1 below:
[0054] Table 1
[0055] The present invention further provides a semiconductor device, which includes a reaction chamber device as described in any of the above embodiments.
[0056] Obviously, the above embodiments of this utility model are merely examples for clearly illustrating the present utility model, and are not intended to limit the implementation of the present utility model. Those skilled in the art can make various obvious changes, readjustments, and substitutions without departing from the protection scope of this utility model. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the protection scope of the claims of this utility model.
Claims
1. A reaction chamber device, characterized in that, It includes a first reaction chamber (1) and a second reaction chamber (2); The first reaction chamber (1) and the second reaction chamber (2) are connected by at least two layers of grid (3), and the plasma in the first reaction chamber (1) is extended to the second reaction chamber (2) through at least two layers of grid (3). Each layer of the grid (3) is provided with a diffusion hole (4), the diffusion hole (4) is uniformly distributed at the center of the grid (3) with a first density, and the diffusion hole (4) is uniformly distributed at the edge of the grid (3) with a second density, the first density being less than the second density.
2. The reaction chamber device according to claim 1, characterized in that, The at least two layers of the grid (3) include x grids (3), the center points of the x grids (3) are on the same vertical line, the x grids (3) are distributed sequentially from top to bottom between the first reaction chamber (1) and the second reaction chamber (2), and the i-th grid (3) of the x grids (3) is above the (i+1)-th grid (3); The diameter of the first of the x grids (3) is greater than or equal to the diameter of the first reaction chamber (1), and the first grid (3) is the grid (3) closest to the first reaction chamber (1). The diameter of the (i+1)th grid (3) is greater than or equal to the diameter of the i-th grid (3); The diameter of the last of the x grids (3) is less than or equal to the diameter of the second reaction chamber (2), and the last grid (3) is the grid (3) closest to the second reaction chamber (2). Where x is an integer greater than 1, and i is a positive integer less than or equal to x-1.
3. The reaction chamber device according to claim 2, characterized in that, The diffusion holes (4) are distributed in the first region (311) of the i-th grille (3), and the center point of the first region (311) is on the same vertical line as the center point of the i-th grille (3). The diffusion holes (4) are distributed in the second region (321) of the (i+1)th grille (3), and the center point of the second region (321) is on the same vertical line as the center point of the (i+1)th grille (3); The radius of the first region (311) is less than or equal to the radius of the second region (321).
4. The reaction chamber device according to claim 2 or 3, characterized in that, The diffusion holes (4) on the i-th grid (3) are misaligned with the diffusion holes (4) on the (i+1)-th grid (3).
5. The reaction chamber device according to claim 4, characterized in that, A buffer gap (5) is provided between the i-th grid (3) and the i+1-th grid (3), the buffer gap (5) being used to buffer plasma diffusing from the i-th grid (3) to the i+1-th grid (3).
6. A semiconductor device, characterized in that, Includes the reaction chamber device as described in any one of claims 1-5.