An antenna tuner switch and radio frequency front-end circuit

Abstract

This invention provides an antenna tuner switch and RF front-end circuit, relating to the field of antenna tuner technology. A transversely series resistor is added to the resistor biasing network, namely, multiple second resistors sequentially connected in series on the first connection line, and multiple fourth resistors sequentially connected in series on the second connection line. Due to the series-parallel relationship of the resistor biasing network, the application of the transversely series second resistors in the first resistor biasing network can greatly reduce the AC current leakage to the AC ground at the gate terminal, and the application of the transversely series fourth resistors in the second resistor biasing network can greatly reduce the AC current leakage to the AC ground at the body terminal. Considering the switching time design, the resistance value of the second resistor increases gradually in the direction near the first intermediate connection node, and the resistance value of the fourth resistor increases gradually in the direction near the second intermediate connection node, to avoid increasing the switching time.

Description

Technical Field

[0001] This application relates to the field of antenna tuner technology, and in particular to an antenna tuner switch and radio frequency front-end circuit. Background Technology

[0002] In RF front-end circuits, designing the highest withstand voltage of the antenna tuner has always been a challenge, requiring the balancing act of maintaining high withstand voltage while keeping on-resistance and turn-off capacitance low. In SPST (Single Pole Single Throw) antenna tuner switch designs, the bias networks for the gate and body terminals of the MOSFET are typically designed as resistor-biased networks; for example... Figure 1 As shown, Figure 1 This is a schematic diagram of the circuit structure of the antenna tuner switch in a traditional scheme. The resistor biasing network of the gate terminal Vg_bias and the body terminal Vb_bias of the MOS transistor (M1…Mn) is usually formed by a common resistor (Rg_common, Rb_common) and a non-common resistor (Rg, Rb) with a uniform resistance value.

[0003] The resistor bias network, while providing static bias, also affects the switching time and the voltage division balance of the antenna tuner switches. Specifically, the resistor bias network is not an ideal high-resistance network under AC conditions. The AC current at the antenna terminal T1 leaks through Rg and Rg_common to the AC ground of the gate terminal Vg_bias, and through Rb and Rb_common to the AC ground of the body terminal Vb_bias. This causes an imbalance in the voltage division of the switching chain, resulting in the MOSFETs near the antenna terminal T1 experiencing voltages exceeding the voltage that each MOSFET can distribute equally, leading to their initial failure in practical applications.

[0004] Therefore, how to improve the maximum withstand voltage performance of the antenna tuner by optimizing the voltage division and equalization state of the antenna tuner switch while taking into account the switching time is a technical problem that urgently needs to be solved by those skilled in the art. Utility Model Content

[0005] In view of the above problems, this application provides an antenna tuner switch and RF front-end circuit, which improves the maximum withstand voltage performance by optimizing the voltage division and equalization state of the antenna tuner switch while taking into account the switching time. The specific solution is as follows:

[0006] The first aspect of this application provides an antenna tuner switch, the antenna tuner switch comprising: N MOS transistors connected sequentially from the antenna end to the ground end and a resistor bias network; the resistor bias network includes a first resistor bias network and a second resistor bias network; the first resistor bias network is disposed at one end of the gate electrode of the MOS transistor, and the second resistor bias network is disposed at one end of the body electrode of the MOS transistor.

[0007] The first resistor bias network includes: N first resistors, multiple second resistors, a first common resistor, and a first connection line; the first end of each first resistor is electrically connected to the gate electrode of the MOS transistor, and the second end of each first resistor is electrically connected to the first connection line; the multiple second resistors are connected in series on the first connection line; the first connection line has a first intermediate connection node, the first end of the first common resistor is connected to the first intermediate connection node, and the second end of the first common resistor serves as the gate electrode of the antenna tuner switch;

[0008] In the direction closer to the first intermediate connection node, the resistance value of the second resistor changes with a gradient increasing trend;

[0009] The second resistor bias network includes: N third resistors, multiple fourth resistors, a second common resistor, and a second connection line; the first end of each third resistor is electrically connected to the body electrode of the MOS transistor, and the second end of each third resistor is electrically connected to the second connection line; the multiple fourth resistors are connected in series on the second connection line; the second connection line has a second intermediate connection node, the first end of the second common resistor is connected to the second intermediate connection node, and the second end of the second common resistor serves as the body electrode of the antenna tuner switch;

[0010] In the direction closer to the second intermediate connection node, the resistance value of the fourth resistor changes with a gradient increasing trend.

[0011] Preferably, in the above-mentioned antenna tuner switch, in the direction near the first intermediate connection node, the resistance value of the second resistor changes with a gradient increasing trend, with one second resistor as the unit;

[0012] Alternatively, in the direction near the first intermediate connection node, the resistance value of the second resistor changes with a gradient increasing trend, with at least two second resistors as units, and the resistance value changes with a gradient increasing trend in the direction near the first intermediate connection node.

[0013] Preferably, in the above-mentioned antenna tuner switch, in the direction near the second intermediate connection node, the resistance value of the fourth resistor changes with a gradient increasing trend, with one fourth resistor as the unit, and the resistance value changes with a gradient increasing trend in the direction near the second intermediate connection node.

[0014] Alternatively, in the direction near the second intermediate connection node, the resistance value of the fourth resistor changes with a gradient increasing trend, with at least two of the fourth resistors as units, and the resistance value changes with a gradient increasing trend in the direction near the second intermediate connection node.

[0015] Preferably, in the above-mentioned antenna tuner switch, the resistance value of the first resistor changes with a gradient increasing trend in the direction near the first intermediate connection node;

[0016] And / or, in the direction near the second intermediate connection node, the resistance value of the third resistor changes with a gradient increasing trend.

[0017] Preferably, in the above-mentioned antenna tuner switch, N is an odd number; the first resistor near the antenna end is used as the first first resistor, and the first resistor near the ground end is used as the Nth first resistor;

[0018] The connection node between the second end of the (N+1) / 2th first resistor and the first connection line is the first intermediate connection node;

[0019] The connection node between the second end of the (N+1) / 2th third resistor and the second connection line serves as the second intermediate connection node.

[0020] Preferably, in the above-mentioned antenna tuner switch, N is an even number;

[0021] The first resistor closest to the antenna end is taken as the first first resistor, and the first resistor closest to the ground end is taken as the Nth first resistor; the third resistor closest to the antenna end is taken as the first third resistor, and the third resistor closest to the ground end is taken as the Nth third resistor.

[0022] The connection node between the second end of the N / 2th first resistor and the first connection line is the first connection node, and the connection node between the second end of the (N / 2)+1th first resistor and the first connection line is the second connection node; the first intermediate connection node is located between the first connection node and the second connection node.

[0023] The connection node between the second end of the N / 2th third resistor and the second connection line is the third connection node, and the connection node between the second end of the (N / 2)+1th third resistor and the second connection line is the fourth connection node; the second intermediate connection node is located between the third connection node and the fourth connection node.

[0024] Preferably, in the above-mentioned antenna tuner switch, a second resistor is connected in series between the second ends of two adjacent first resistors from the first first resistor to the N / 2th first resistor; a second resistor is connected in series between the second ends of two adjacent first resistors from the (N / 2)+1th first resistor to the Nth first resistor;

[0025] The fourth resistor is connected in series between the second ends of two adjacent third resistors from the first third resistor to the N / 2th third resistor; the fourth resistor is connected in series between the second ends of two adjacent third resistors from the (N / 2)+1th third resistor to the Nth third resistor.

[0026] Preferably, in the above-mentioned antenna tuner switch, a second resistor is connected in series between the first connecting node and the first intermediate connecting node; a second resistor is connected in series between the second connecting node and the first intermediate connecting node.

[0027] Preferably, in the above-mentioned antenna tuner switch, the fourth resistor is connected in series between the third connection node and the second intermediate connection node; the fourth resistor is connected in series between the fourth connection node and the second intermediate connection node.

[0028] A second aspect of this application provides a radio frequency front-end circuit, the radio frequency front-end circuit including any of the antenna tuner switches described above.

[0029] By employing the above technical solution, this application provides an antenna tuner switch and RF front-end circuit. A transversely series resistor is added to the resistor biasing network, specifically multiple second resistors sequentially connected in series on the first connection line, and multiple fourth resistors sequentially connected in series on the second connection line. Due to the series-parallel relationship of the resistor biasing network, the application of the transversely series second resistors in the first resistor biasing network can significantly reduce the AC current leakage to the AC ground at the gate terminal, and the application of the transversely series fourth resistors in the second resistor biasing network can significantly reduce the AC current leakage to the AC ground at the body terminal. Simultaneously, to consider the switching time design, the resistance value of the second resistors increases gradually towards the first intermediate connection node, and the resistance value of the fourth resistors increases gradually towards the second intermediate connection node, to avoid increasing the switching time. This achieves the goal of improving the maximum withstand voltage performance of the antenna tuner switch by optimizing the voltage division balance state while considering the switching time. Attached Figure Description

[0030] The above and other features, advantages, and aspects of the embodiments of this disclosure will become more apparent from the accompanying drawings and the following detailed description. Throughout the drawings, the same or similar reference numerals denote the same or similar elements. It should be understood that the drawings are schematic, and the originals and elements are not necessarily drawn to scale.

[0031] Figure 1 This is a schematic diagram of the circuit structure of the antenna tuner switch in a traditional scheme.

[0032] Figure 2 A circuit structure diagram of an antenna tuner switch provided for an embodiment of this utility model;

[0033] Figure 3 A schematic diagram of the circuit structure of another antenna tuner switch provided for an embodiment of this utility model;

[0034] Figure 4 A schematic diagram of the circuit structure of another antenna tuner switch provided for an embodiment of this utility model;

[0035] Figure 5 A schematic diagram of the circuit structure of another antenna tuner switch provided in this embodiment of the utility model;

[0036] Figure 6 A schematic diagram of a simulation result provided for an embodiment of this utility model;

[0037] Figure 7 This is a schematic diagram of another simulation result provided for an embodiment of the present utility model. Detailed Implementation

[0038] The embodiments of this application are described below with reference to the accompanying drawings. The terminology used in the implementation section of this application is only for explaining specific embodiments and is not intended to limit the application. Those skilled in the art will recognize that, with technological advancements and the emergence of new scenarios, the technical solutions provided in the embodiments of this application are also applicable to similar technical problems.

[0039] The design concept of this application is based on the high-voltage withstand design principle of antenna tuner switches. In the high-voltage withstand design of antenna tuner switches, the key lies in how to balance the voltage between the source and drain of each MOSFET. When the antenna tuner switch is off, the large-amplitude signal Vpeak at the antenna end will be applied to the switching chain. If each of the N MOSFETs can distribute the high voltage evenly, i.e., Vpeak / N, and the Vpeak / N is designed to be close to the physical withstand voltage limit of the MOSFETs, then the withstand voltage can be achieved using the fewest MOSFET stack-up layers, thereby obtaining better on-resistance and cost, achieving optimal design.

[0040] However, in practical designs, while the resistor biasing network provides static bias, it also affects the switching time and the voltage division balance of the antenna tuner switches. Specifically, the resistor biasing network is not an ideal high-impedance network under AC conditions, such as... Figure 1 As shown, the AC current at the antenna terminal T1 leaks through Rg and Rg_common to the AC ground of the gate terminal Vg_bias, and through Rb and Rb_common to the AC ground of the body terminal Vb_bias. This causes an imbalance in the voltage division of the switching chain, resulting in the MOSFET near the antenna terminal T1 experiencing a voltage value exceeding Vpeak / N, which will be the first to fail in the application scenario.

[0041] Based on this, the present invention provides an antenna tuner switch and RF front-end circuit, which can improve the maximum withstand voltage performance by optimizing the voltage division and equalization state of the antenna tuner switch while taking into account the switching time.

[0042] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0043] It should be noted that the directional terms appearing in this utility model are based on the relative positional relationships shown in the accompanying drawings and should not be taken as absolute limitations on this application.

[0044] refer to Figure 2 , Figure 2This is a schematic diagram of the circuit structure of an antenna tuner switch provided in an embodiment of the present invention. The antenna tuner switch provided in this embodiment of the present invention includes: N MOS transistors (i.e., M1…Mn) connected sequentially from the antenna terminal T1 to the ground terminal G1, and a resistor biasing network; the resistor biasing network includes a first resistor biasing network and a second resistor biasing network; the first resistor biasing network is disposed at one end of the gate electrode of the MOS transistor M, and the second resistor biasing network is disposed at one end of the body electrode of the MOS transistor M.

[0045] The first resistor biasing network includes: N first resistors (i.e., Rg,1…Rg,n), multiple second resistors (i.e., Rs,1…Rs,h), a first common resistor Rg_common, and a first connection line L1; the first end of the first resistor Rg is electrically connected to the gate electrode of the MOS transistor M, and the second end of the first resistor Rg is electrically connected to the first connection line L1; the multiple second resistors Rs are connected in series on the first connection line L1; the first connection line L1 has a first intermediate connection node, the first end of the first common resistor Rg_common is connected to the first intermediate connection node, and the second end of the first common resistor Rg_common serves as the gate electrode Vg_bias of the antenna tuner switch.

[0046] In the direction closer to the first intermediate connection node, the resistance value of the second resistor Rs changes with a gradient increasing trend.

[0047] The second resistor bias network includes: N third resistors (i.e., Rb,1…Rb,n), multiple fourth resistors (i.e., Rx,1…Rx,h), a second common resistor Rb_common, and a second connection line L2; the first end of the third resistor Rb is electrically connected to the body electrode of the MOS transistor M, and the second end of the third resistor Rb is electrically connected to the second connection line L2; the multiple fourth resistors Rx are connected in series on the second connection line L2; the second connection line L2 has a second intermediate connection node, the first end of the second common resistor Rb_common is connected to the second intermediate connection node, and the second end of the second common resistor Rb_common serves as the body electrode Vb_bias of the antenna tuner switch.

[0048] In the direction closer to the second intermediate connection node, the resistance value of the fourth resistor Rx changes with a gradient increasing trend.

[0049] Specifically, in this embodiment of the invention, a series resistor is added to the resistor biasing network. That is, multiple second resistors Rs are added sequentially in series on the first connection line L1 in the first resistor biasing network, and multiple fourth resistors Rx are added sequentially in series on the second connection line L2 in the second resistor biasing network. Due to the series-parallel relationship of the resistor biasing network, the application of the series second resistors Rs in the first resistor biasing network can greatly reduce the AC current leakage to the AC ground of the gate terminal, and the application of the series fourth resistors Rx in the second resistor biasing network can greatly reduce the AC current leakage to the AC ground of the body terminal. To balance switching time, the resistance values ​​of the second resistors Rs increase in a gradient from left to right towards the first intermediate connection node. Specifically, the resistance values ​​of the multiple second resistors Rs are designed to increase gradually from the first second resistor Rs,1 on the left towards the first intermediate connection node, and from the h-th second resistor Rs,h on the left towards the first intermediate connection node. Similarly, the resistance values ​​of the fourth resistors Rx also increase gradually towards the second intermediate connection node. This is done to avoid increasing the switching time, thereby improving the maximum withstand voltage performance of the antenna tuner switch by optimizing the voltage division and equalization state while considering switching time.

[0050] In one possible implementation, the resistance value of the second resistor Rs changes with a gradient increasing trend in the direction near the first intermediate connection node. That is, there exists a relationship of Rs,1 < Rs,2 < Rs,3 < ... and a relationship of > ... Rs,h-2 > Rs,h-1 > Rs,h.

[0051] Alternatively, in the direction near the first intermediate connection node, the resistance value of the second resistor Rs changes with a gradient increasing trend, taking at least two second resistors Rs as units, and the resistance value changes with a gradient increasing trend in the direction near the first intermediate connection node; for example, there are relationships of (Rs,1=Rs,2) < (Rs,3=Rs,4) < ... and > ... (Rs,h-3=Rs,h-2) > (Rs,h-1=Rs,h); for example, there may also be relationships of (Rs,1=Rs,2=Rs,3) < (Rs,4=Rs,5=Rs,6) < ... and > ... (Rs,h-5=Rs,h-4=Rs,h-3) > (Rs,h-2=Rs,h-1=Rs,h), and obviously, it can also gradually change with four or more identical second resistors Rs as a unit, which will not be elaborated here.

[0052] In one possible implementation, the resistance value of the fourth resistor Rx changes with a gradient increasing trend in the direction near the second intermediate connection node, with one fourth resistor Rx as the unit; that is, there exists a relationship of Rx,1 < Rx,2 < Rx,3 < ... and a relationship of > ... Rx,h-2 > Rx,h-1 > Rx,h.

[0053] Alternatively, in the direction near the second intermediate connection node, the resistance value of the fourth resistor Rx changes with a gradient increasing trend, taking at least two fourth resistors Rx as units, and the resistance value changes with a gradient increasing trend in the direction near the second intermediate connection node; for example, there are relationships of (Rx,1=Rx,2) < (Rx,3=Rx,4) < ... and > ... (Rx,h-3=Rx,h-2) > (Rx,h-1=Rx,h); for example, there can also be relationships of (Rx,1=Rx,2=Rx,3) < (Rx,4=Rx,5=Rx,6) < ... and > ... (Rx,h-5=Rx,h-4=Rx,h-3) > (Rx,h-2=Rx,h-1=Rx,h), and obviously, it can also gradually change with four or more equal fourth resistors Rx as a unit, which will not be elaborated here.

[0054] In one possible implementation, the resistance value of the first resistor Rg changes with a gradient increasing trend in the direction near the first intermediate connection node; and / or, the resistance value of the third resistor Rb changes with a gradient increasing trend in the direction near the second intermediate connection node.

[0055] Specifically, adding the second resistor Rs is equivalent to increasing the gate electrode resistance of each MOSFET M; therefore, the resistance of the first resistor Rg needs to be reduced to a certain extent to avoid increasing the switching time. Similarly, adding the fourth resistor Rx is equivalent to increasing the body electrode resistance of each MOSFET M; therefore, the resistance of the third resistor Rb needs to be reduced to a certain extent to avoid increasing the switching time.

[0056] Specifically, in the direction closer to the first intermediate connection node, the resistance value of the first resistor Rg changes with a gradient increasing trend. Taking one first resistor Rg as a unit, the resistance value changes with a gradient increasing trend in the direction closer to the first intermediate connection node; that is, there exists a relationship of Rg,1 < Rg,2 < Rg,3 < ... and a relationship of > ... Rg,n-2 > Rg,n-1 > Rg,n.

[0057] Alternatively, in the direction near the first intermediate connection node, the resistance value of the first resistor Rg changes with a gradient increasing trend, taking at least two first resistors Rg as units, and the resistance value changes with a gradient increasing trend in the direction near the first intermediate connection node; for example, there are relationships of (Rg,1=Rg,2) < (Rg,3=Rg,4) < ... and > ... (Rg,n-3=Rg,n-2) > (Rg,n-1=Rg,n); for example, there can also be relationships of (Rg,1=Rg,2=Rg,3) < (Rg,4=Rg,5=Rg,6) < ... and > ... (Rg,n-5=Rg,n-4=Rg,n-3) > (Rg,n-2=Rg,n-1=Rg,n), and obviously, it can also gradually change with four or more equal first resistors Rg as units, which will not be elaborated here.

[0058] Specifically, in the direction closer to the second intermediate connection node, the resistance value of the third resistor Rb changes with a gradient increasing trend. Taking one third resistor Rb as a unit, the resistance value changes with a gradient increasing trend in the direction closer to the second intermediate connection node; that is, there exists a relationship of Rb,1 < Rb,2 < Rb,3 < ... and a relationship of > ... Rb,n-2 > Rb,n-1 > Rb,n.

[0059] Alternatively, in the direction near the second intermediate connection node, the resistance value of the third resistor Rb changes with a gradient increasing trend, taking at least two third resistors Rb as units, and the resistance value changes with a gradient increasing trend in the direction near the second intermediate connection node; for example, there are relationships of (Rb,1=Rb,2) < (Rb,3=Rb,4) < ... and > ... (Rb,n-3=Rb,n-2) > (Rb,n-1=Rb,n); for example, there can also be relationships of (Rb,1=Rb,2=Rb,3) < (Rb,4=Rb,5=Rb,6) < ... and > ... (Rb,n-5=Rb,n-4=Rb,n-3) > (Rb,n-2=Rb,n-1=Rb,n), and obviously, it can also gradually change with four or more equal third resistors Rb as units, which will not be elaborated here.

[0060] Specifically, in the design of the gradient resistor values, since the bottleneck of the switching time is the two MOS transistors (M1 and Mn) far from the common resistor, the resistance values ​​of the first second resistor Rs,1 and the h-th second resistor Rs,h at both ends are designed to be minimized, and then gradually increased towards the first common resistor Rg_common; the resistance values ​​of the first fourth resistor Rx,1 and the h-th fourth resistor Rx,h at both ends are designed to be minimized, and then gradually increased towards the second common resistor Rb_common, in order to avoid increasing the switching time; or the gradient resistor values ​​of the first resistor Rg and the third resistor Rb can be designed simultaneously to minimize the increase in switching time, thereby achieving the goal of improving the maximum withstand voltage performance of the antenna tuner switch by optimizing the voltage division balance state while taking into account the switching time.

[0061] It should be noted that the minimum resistance value of the first second resistor Rs,1 and the h-th second resistor Rs,h can be zero, and the minimum resistance value of the first fourth resistor Rx,1 and the h-th fourth resistor Rx,h can also be zero. The specific values ​​can be determined according to the specific design, and different designs will have different values.

[0062] It should be further noted that the slope of the resistance gradient of the resistor biasing network can be flexibly adjusted according to the number of MOSFETs M stacked. The more MOSFETs M stacked, the smaller the gradient slope. For example, when the number of MOSFETs M is 30 and 20 respectively, the gradient slope corresponding to 30 MOSFETs M is lower than the gradient slope corresponding to 20 MOSFETs M.

[0063] Optionally, the resistance value of the second resistor Rs is in the range of 0K ohms to 10K ohms, and the resistance value of the fourth resistor Rx is in the range of 0K ohms to 10K ohms.

[0064] Optional, see reference Figure 3 , Figure 3 This is a schematic diagram of another antenna tuner switch provided in an embodiment of the present invention. In this embodiment, N is an odd number, and N=5 is used as an example for explanation; the first resistor Rg near the antenna terminal T1 is taken as the first first resistor Rg,1, and the first resistor Rg near the ground terminal G1 is taken as the Nth first resistor Rg,n.

[0065] The connection node between the second end of the (N+1) / 2th first resistor and the first connection line L1 serves as the first intermediate connection node. For example, when N=5, the connection node between the second end of the third first resistor Rg,3 and the first connection line L1 serves as the first intermediate connection node.

[0066] The connection node between the second end of the (N+1) / 2th third resistor and the second connection line L2 serves as the second intermediate connection node. For example, in the case of N=5, the connection node between the second end of the third resistor Rb,3 and the second connection line L2 serves as the second intermediate connection node.

[0067] Optional, see reference Figure 4 , Figure 4 This is a schematic diagram of the circuit structure of another antenna tuner switch provided in this embodiment of the present invention. In this embodiment of the present invention, N is an even number, and N=4 is used as an example for explanation; the first resistor Rg near the antenna terminal T1 is taken as the first first resistor Rg,1, and the first resistor Rg near the ground terminal G1 is taken as the Nth first resistor Rg,n; the third resistor Rb near the antenna terminal T1 is taken as the first third resistor Rb,1, and the third resistor Rb near the ground terminal G1 is taken as the Nth third resistor Rb,n.

[0068] The connection node between the second end of the N / 2th first resistor and the first connection line L1 is the first connection node, and the connection node between the second end of the (N / 2)+1th first resistor and the first connection line L1 is the second connection node; the first intermediate connection node is located between the first connection node and the second connection node; for example, when N=4, the connection node between the second end of the second first resistor Rg,2 and the first connection line L1 is the first connection node, and the connection node between the second end of the third first resistor Rg,3 and the first connection line L1 is the second connection node.

[0069] The connection node between the second end of the N / 2th third resistor and the second connection line L2 is the third connection node, and the connection node between the second end of the (N / 2)+1th third resistor and the second connection line L2 is the fourth connection node; the second intermediate connection node is located between the third connection node and the fourth connection node; for example, when N=4, the connection node between the second end of the second third resistor Rb,2 and the second connection line L2 is the third connection node, and the connection node between the second end of the third third resistor Rb,3 and the second connection line L2 is the fourth connection node.

[0070] like Figure 4 As shown, in the first resistor Rg,1 to the N / 2th resistor, the second resistor Rs is connected in series between the second ends of two adjacent resistors Rg; in the (N / 2)+1th resistor to the Nth resistor Rg,n, the second resistor Rs is connected in series between the second ends of two adjacent resistors Rg; that is, there is no second resistor Rs connected in series between the second ends of the N / 2th resistor and the (N / 2)+1th resistor.

[0071] The fourth resistor Rx is connected in series between the second ends of two adjacent third resistors Rb, from the first third resistor Rb,1 to the N / 2th third resistor; the fourth resistor Rx is connected in series between the second ends of two adjacent third resistors Rb, from the (N / 2)+1th third resistor to the Nth third resistor Rb,n; that is, there is no fourth resistor Rx connected in series between the second ends of the N / 2th third resistor and the (N / 2)+1th third resistor.

[0072] Optional, see reference Figure 5 , Figure 5 This is a schematic diagram of the circuit structure of another antenna tuner switch provided in an embodiment of the present invention. Taking an even number N, with N=4, as an example, a second resistor Rs is connected in series between the first connecting node and the first intermediate connecting node; a second resistor Rs is connected in series between the second connecting node and the first intermediate connecting node. And / or, a fourth resistor Rx is connected in series between the third connecting node and the second intermediate connecting node; a fourth resistor Rx is connected in series between the fourth connecting node and the second intermediate connecting node.

[0073] In this embodiment of the utility model, the second resistor Rs is connected in series between the first connecting node and the first intermediate connecting node; the second resistor Rs is connected in series between the second connecting node and the first intermediate connecting node; and the fourth resistor Rx is connected in series between the third connecting node and the second intermediate connecting node; the fourth resistor Rx is connected in series between the fourth connecting node and the second intermediate connecting node.

[0074] It should be noted that different circuit configurations of antenna tuner switches can achieve almost the same effect, although the intensity of the effect may vary. The corresponding circuit structure can be designed according to the actual design requirements.

[0075] The technical effects of the antenna tuner switch provided by this utility model will be further explained below through simulation.

[0076] refer to Figure 6 , Figure 6 A simulation result diagram provided for an embodiment of this utility model, for reference. Figure 7 , Figure 7 This is a schematic diagram of another simulation result provided for an embodiment of the present utility model.

[0077] Figure 6 The results shown represent a typical high-voltage tuner design. After applying the improved technology of this application and designing a gradient change, while ensuring minimal changes in switching frequency, the AC leakage current of the gate electrode is significantly reduced compared to the traditional structure. Figure 6 As shown, Figure 6 The M1-M4 in the series are not the same as those in the series. Figures 1-5 The MOSFETs M1-M4 in the diagram are the same or correspond to each other. Figure 6 In the diagram, M1-M4 are simply marker points; the solid line represents the original scheme, and the dashed line represents the improved scheme. Figure 6 M1 and M2 in the diagram actually represent the states of the first MOSFET in the two schemes before and after the improvement. Figure 6 M3 and M4 represent the states of the last MOSFET in the two schemes before and after the improvement. It can be seen that after the improvement... Figure 6 The current in M1 is smaller than that in M2.

[0078] At the same time, such as Figure 7 As shown, the source-drain voltage division of the MOSFETs is more balanced (M5: 2.88V minus M7: 2.34V represents a voltage difference of 0.54V between the first and last MOSFETs; M6: 2.84V minus M8: 2.37V represents a voltage difference of 0.47V between the first and last MOSFETs; therefore, the improved scheme has a more balanced voltage division). Figure 7As shown in the figure, the voltage withstand capability of four typical MOSFETs from antenna terminal T1 to ground terminal G1 is compared. It can be seen that compared with the traditional structure, the voltage division of the MOSFETs in the antenna tuner switch is more uniform and balanced, improving the overall voltage withstand capability of the antenna tuner switch by about 1V~2V. Figure 7 M5 and M6 in the circuit diagram are the first MOSFET M1, M7 and M8 are the last MOSFET Mn in the circuit diagram, and M9 and M10 are equivalent to dividing the MOSFETs M2-Mn-1 in the circuit diagram into multiple segments, selecting several MOSFETs in one segment and calculating the average voltage value. Similarly, M12 and M11 are similar, except that M12 and M11 are closer to the last MOSFET Mn than M9 and M10.

[0079] Based on the above embodiments of this utility model, another embodiment of this utility model also provides a radio frequency (RF) front-end circuit, which includes the antenna tuner switch described in the above embodiments. This RF front-end circuit has the same or corresponding technical effects as the antenna tuner switch.

[0080] The present invention provides a detailed description of an antenna tuner switch and radio frequency front-end circuit. Specific examples have been used to illustrate the principle and implementation of the present invention. The description of the above embodiments is only for the purpose of helping to understand the method and core idea of ​​the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation and application scope based on the idea of ​​the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

[0081] It should be noted that each embodiment in this specification focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other.

[0082] It should also be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that elements inherent to a process, method, article, or apparatus that comprises a list of elements, or elements inherent to such processes, methods, articles, or apparatus, are also included. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0083] The above description of the disclosed embodiments enables those skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An antenna tuner switch, characterized in that, The antenna tuner switch includes N MOS transistors connected sequentially from the antenna end to the ground end and a resistor bias network; the resistor bias network includes a first resistor bias network and a second resistor bias network; the first resistor bias network is configured at one end of the gate electrode of the MOS transistor, and the second resistor bias network is configured at one end of the body electrode of the MOS transistor. The first resistor bias network includes: N first resistors, multiple second resistors, a first common resistor, and a first connection line; the first end of each first resistor is electrically connected to the gate electrode of the MOS transistor, and the second end of each first resistor is electrically connected to the first connection line; the multiple second resistors are connected in series on the first connection line; the first connection line has a first intermediate connection node, the first end of the first common resistor is connected to the first intermediate connection node, and the second end of the first common resistor serves as the gate electrode of the antenna tuner switch; In the direction closer to the first intermediate connection node, the resistance value of the second resistor changes with a gradient increasing trend; The second resistor bias network includes: N third resistors, multiple fourth resistors, a second common resistor, and a second connection line; the first end of each third resistor is electrically connected to the body electrode of the MOS transistor, and the second end of each third resistor is electrically connected to the second connection line; the multiple fourth resistors are connected in series on the second connection line; the second connection line has a second intermediate connection node, the first end of the second common resistor is connected to the second intermediate connection node, and the second end of the second common resistor serves as the body electrode of the antenna tuner switch; In the direction closer to the second intermediate connection node, the resistance value of the fourth resistor changes with a gradient increasing trend.

2. The antenna tuner switch according to claim 1, characterized in that, In the direction near the first intermediate connection node, the resistance value of the second resistor changes with a gradient increasing trend, taking one second resistor as a unit; Alternatively, in the direction near the first intermediate connection node, the resistance value of the second resistor changes with a gradient increasing trend, with at least two second resistors as units, and the resistance value changes with a gradient increasing trend in the direction near the first intermediate connection node.

3. The antenna tuner switch according to claim 1, characterized in that, In the direction near the second intermediate connection node, the resistance value of the fourth resistor changes with a gradient increasing trend, with one fourth resistor as the unit; Alternatively, in the direction near the second intermediate connection node, the resistance value of the fourth resistor changes with a gradient increasing trend, with at least two of the fourth resistors as units, in the direction near the second intermediate connection node.

4. The antenna tuner switch according to claim 1, characterized in that, In the direction closer to the first intermediate connection node, the resistance value of the first resistor changes with a gradient increasing trend; And / or, in the direction near the second intermediate connection node, the resistance value of the third resistor changes with a gradient increasing trend.

5. The antenna tuner switch according to claim 1, characterized in that, N is an odd number; the first resistor closest to the antenna end is taken as the first first resistor, and the first resistor closest to the ground end is taken as the Nth first resistor; The connection node between the second end of the (N+1) / 2th first resistor and the first connection line is the first intermediate connection node; The connection node between the second end of the (N+1) / 2th third resistor and the second connection line serves as the second intermediate connection node.

6. The antenna tuner switch according to claim 1, characterized in that, N is an even number; The first resistor closest to the antenna end is taken as the first first resistor, and the first resistor closest to the ground end is taken as the Nth first resistor; The third resistor closest to the antenna end is taken as the first third resistor, and the third resistor closest to the ground end is taken as the Nth third resistor; The connection node between the second end of the N / 2th first resistor and the first connection line is the first connection node, and the connection node between the second end of the (N / 2)+1th first resistor and the first connection line is the second connection node; the first intermediate connection node is located between the first connection node and the second connection node. The connection node between the second end of the N / 2th third resistor and the second connection line is the third connection node, and the connection node between the second end of the (N / 2)+1th third resistor and the second connection line is the fourth connection node; the second intermediate connection node is located between the third connection node and the fourth connection node.

7. The antenna tuner switch according to claim 6, characterized in that, A second resistor is connected in series between the second ends of any two adjacent first resistors from the first first resistor to the N / 2th first resistor; a second resistor is connected in series between the second ends of any two adjacent first resistors from the (N / 2)+1th first resistor to the Nth first resistor; The fourth resistor is connected in series between the second ends of two adjacent third resistors from the first third resistor to the N / 2th third resistor; the fourth resistor is connected in series between the second ends of two adjacent third resistors from the (N / 2)+1th third resistor to the Nth third resistor.

8. The antenna tuner switch according to claim 7, characterized in that, A second resistor is connected in series between the first connecting node and the first intermediate connecting node; a second resistor is connected in series between the second connecting node and the first intermediate connecting node.

9. The antenna tuner switch according to claim 8, characterized in that, The fourth resistor is connected in series between the third connection node and the second intermediate connection node; the fourth resistor is connected in series between the fourth connection node and the second intermediate connection node.

10. A radio frequency front-end circuit, characterized in that, The radio frequency front-end circuit includes the antenna tuner switch as described in any one of claims 1-9.

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