MOS components, SIP modules, connectivity devices, and electronic devices

Abstract

This utility model discloses a MOS component, a SIP module, a connection device, and an electronic device. The MOS component includes a substrate, a first MOS transistor, a second MOS transistor, a first insulating layer, a first conductive structure, and a second conductive structure. The second MOS transistor is fixed to the substrate. The first MOS transistor is fixed to one of the substrate and the second MOS transistor, and is stacked with the second MOS transistor along the thickness direction of the substrate. The first insulating layer encloses the substrate, the first MOS transistor, and the second MOS transistor. The first conductive structure is disposed on at least one of the substrate and the first MOS transistor, and is electrically connected to the first MOS transistor. A portion of the first conductive structure is exposed outside the first insulating layer. The second conductive structure is disposed on the substrate and is electrically connected to the second MOS transistor. A portion of the second conductive structure is exposed outside the first insulating layer. This MOS component can integrate at least two MOS transistors, has a compact structure, and can reduce the area space occupied by the connection device.

Description

Technical Field

[0001] This disclosure relates to the field of electronic technology, and in particular to a MOS component, a SIP module, a connection device, and an electronic device. Background Technology

[0002] Mobile phones, tablets, smartwatches, and other electronic devices have become indispensable technological products in people's lives, studies, and entertainment. With the development of electronic devices, they integrate more and more functions, while requiring miniaturization, which necessitates increasingly higher space utilization rates.

[0003] In related technologies, functional modules (such as batteries or camera modules) are connected to the control motherboard via connectors to achieve modular assembly and improve the assembly efficiency of electronic devices. These connectors typically integrate SiP modules for electrical connection to the control motherboard. However, traditional SiP modules are relatively large, occupying significant space on the control motherboard. This increases the complexity of the control motherboard layout and hinders cost reduction for electronic devices. Utility Model Content

[0004] This disclosure provides a MOS component, a SIP module, a connection device, and an electronic device. The MOS component integrates at least two MOSFETs, resulting in a more compact structure. Applying this MOS component to a SIP module reduces the module's area, which in turn reduces the space occupied by the connection device, simplifies the layout of the control board, and ultimately lowers the cost of the electronic device.

[0005] The technical solution is as follows:

[0006] According to a first aspect of the present disclosure, a MOS device is provided, including a substrate, a first MOS transistor, a second MOS transistor, a first insulating layer, a first conductive structure, and a second conductive structure. The second MOS transistor is fixed to the substrate. The first MOS transistor is fixed to one of the substrate and the second MOS transistor, and is stacked with the second MOS transistor along the thickness direction of the substrate. The first insulating layer covers at least a portion of the substrate, at least a portion of the first MOS transistor, and at least a portion of the second MOS transistor. The first conductive structure is disposed on at least one of the substrate and the first MOS transistor, and is electrically connected to the first MOS transistor. A portion of the first conductive structure is exposed outside the first insulating layer. The second conductive structure is disposed on the substrate and is electrically connected to the second MOS transistor. A portion of the second conductive structure is exposed outside the first insulating layer.

[0007] The technical solutions provided by the embodiments of this disclosure may include the following beneficial effects:

[0008] During assembly of this MOS component, the second MOS transistor is fixed to the substrate. The first MOS transistor is fixed to one of the substrate and the second MOS transistor, and is stacked with the second MOS transistor along the thickness direction of the substrate. Simultaneously, a first insulating layer encapsulates at least a portion of the substrate, at least a portion of the first MOS transistor, and at least a portion of the second MOS transistor, thereby encapsulating the substrate, the first MOS transistor, and the second MOS transistor into a single unit. Finally, the first and second MOS transistors are connected to other electrical structures (e.g., circuit boards) through a first conductive structure partially exposed to the first insulating layer and a second conductive structure partially exposed to the first insulating layer. This enables modular assembly of the MOS component into a SIP module. Thus, this MOS component can stack at least two MOS transistors along the thickness direction of the substrate, resulting in a compact structure.

[0009] The technical solution of this disclosure will be further explained below:

[0010] In one embodiment, the first insulating layer includes a mounting surface, and the substrate includes a first mating surface disposed toward the mounting surface. The first conductive structure includes a first conductive portion exposed on the mounting surface and insulated from the second conductive structure.

[0011] And / or, the second conductive structure includes a second conductive portion protruding from the first mating surface and a second circuit layer disposed on the substrate. The second MOSFET is electrically connected to the second conductive portion through the second circuit layer. The second conductive portion is at least partially exposed on the mounting surface and is insulated from the first conductive structure.

[0012] In one embodiment, a first conductive portion is disposed on a first mating surface, and a first MOSFET is fixed to the first mating surface. The first conductive structure further includes a first circuit layer disposed on the substrate, the first circuit layer being insulated from the second conductive structure. The first MOSFET is electrically connected to the first conductive portion through the first circuit layer.

[0013] In one embodiment, a first MOSFET is fixed to a first mating surface and is insulated from the substrate. A first conductive portion is disposed on the first MOSFET.

[0014] In one embodiment, the second MOS transistor is stacked and fixed between the first MOS transistor and the substrate, and is insulated from the first MOS transistor.

[0015] In one embodiment, the substrate further includes a second mating surface disposed opposite to the first mating surface. The second MOS transistor is fixed to the second mating surface and electrically connected to the second circuit layer.

[0016] In one embodiment, the first insulating layer includes a first insulating body and a second insulating body. The first insulating body is fixed to a first mating surface and encloses a first MOSFET. The first insulating body has a mounting surface. The second insulating body is fixed to a second mating surface and encloses a second MOSFET.

[0017] In one embodiment, the substrate further includes a second mating surface disposed opposite to the first mating surface, and the second MOSFET is fixed to the second mating surface. A first conductive portion and a second conductive portion are spaced apart from each other on the first mating surface. The first MOSFET is fixed to the second MOSFET and is insulated from it. The first conductive structure includes a third circuit layer disposed on the substrate and a conductive line fixed to a first insulating layer. The third circuit layer is insulated from the second conductive structure and is electrically connected to the first conductive portion. The first MOSFET is electrically connected to the third circuit layer through the conductive line.

[0018] In one embodiment, the first conductive portion includes a first conductive protrusion, a portion of which is exposed outside the first insulating layer.

[0019] Alternatively, the first conductive part includes a first conductive pad, and the first insulating layer is provided with a first clearance hole to avoid the first conductive pad.

[0020] In one embodiment, the second conductive portion includes a second conductive protrusion, a portion of which is exposed outside the first insulating layer.

[0021] Alternatively, the second conductive part includes a second conductive pad, and the first insulating layer is provided with a second clearance hole to avoid the second conductive pad.

[0022] In one embodiment, the first insulating layer encapsulates the first MOS transistor and the second MOS transistor on the substrate.

[0023] In one embodiment, the MOS component further includes at least one third MOS transistor. The at least one third MOS transistor is insulated from at least one of the first MOS transistor, the second MOS transistor, and the substrate. The first insulating layer can also enclose the at least one third MOS transistor. The MOS component further includes a third conductive structure electrically connected to the third MOS transistor. The third conductive structure is disposed in at least one of the substrate, the first MOS transistor, and the second MOS transistor, with a portion of the third conductive structure exposed outside the first insulating layer.

[0024] According to a second aspect of the present disclosure, a SIP module is also provided, including a circuit board and a MOS component as described in any of the above embodiments. The MOS component is mounted on the circuit board through a first insulating layer, and a first conductive structure and a second conductive structure are electrically connected to the circuit board, respectively.

[0025] The technical solutions provided by the embodiments of this disclosure may include the following beneficial effects:

[0026] During assembly of this SIP module, the MOS component is mounted on the circuit board through a first insulating layer, and the first conductive structure and the second conductive structure are electrically connected to the circuit board, thereby integrating at least two MOS transistors into the SIP module to achieve on / off control. Because the MOS component can be stacked with at least two MOS transistors along the thickness direction of the substrate, the area occupied by the MOS component is small, thus reducing the area of ​​the SIP module.

[0027] The technical solution of this disclosure will be further explained below:

[0028] In one embodiment, the SIP module includes a second insulating layer that encloses the circuit board and the MOS assembly;

[0029] And / or, the MOS components include at least two and are spaced apart on the circuit board;

[0030] And / or, the SIP module also includes at least two electrical components disposed on the circuit board, and the MOS assembly is used to control the on / off state of at least one electrical component.

[0031] According to a third aspect of the present disclosure, a connection device is also provided, including a connection plate, a flexible circuit board, a first electrical connector, and a SIP module as described in any of the above embodiments. The connection plate is electrically connected to one end of the flexible circuit board, and the other end of the flexible circuit board includes a first surface and a second surface disposed opposite to the first surface. The first electrical connector is fixed to the first surface and electrically connected to the flexible circuit board. The circuit board is fixed to the second surface and electrically connected to the flexible circuit board.

[0032] The technical solutions provided by the embodiments of this disclosure may include the following beneficial effects:

[0033] The connection device utilizes the SIP module from any of the above embodiments and integrates it into the flexible circuit board. When the connection device is connected to the control motherboard via a connector, the area of ​​the SIP module is reduced, allowing the flexible circuit board and the first electrical connector to also be reduced in size. Consequently, the area space occupied by the connection device on the control motherboard is also reduced, simplifying the layout of the control motherboard.

[0034] According to a fourth aspect of the present disclosure, an electronic device is also provided, including a housing assembly, a control motherboard, a functional module, and a connection device as described above. The control motherboard is disposed on the housing assembly, the functional module is disposed on the housing assembly and electrically connected to the connection board, and a first electrical connector is electrically connected to the control motherboard.

[0035] The technical solutions provided by the embodiments of this disclosure may include the following beneficial effects:

[0036] The electronic device connects the functional modules to the control motherboard through a connecting device. When the connecting device is connected to the control motherboard through the first electrical connector, it occupies a small area of ​​the control motherboard, which can reduce the difficulty of the control motherboard layout and thus help reduce the cost of the electronic device.

[0037] The technical solution of this disclosure will be further explained below:

[0038] In one embodiment, the functional module includes a battery, and the connection board includes a battery protection board.

[0039] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0040] The accompanying drawings, which form part of this disclosure, are used to provide a further understanding of this disclosure. The illustrative embodiments of this disclosure and their descriptions are used to explain this disclosure and do not constitute an undue limitation of this disclosure.

[0041] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0042] Figure 1 This is a schematic diagram of the structure of an electronic device shown in one embodiment.

[0043] Figure 2 for Figure 1 The diagram shows the structure of the connecting device.

[0044] Figure 3 for Figure 2 The diagram shows the structure of the connecting device from another perspective.

[0045] Figure 4 for Figure 2 The SIP module shown is a half-section view along the X-axis.

[0046] Figure 5 for Figure 4 The cross-sectional view of the MOS component shown.

[0047] Figure 6 This is a cross-sectional view of a MOS component shown in one embodiment.

[0048] Figure 7 This is a cross-sectional view of a MOS component shown in another embodiment.

[0049] Figure 8 This is a cross-sectional view of a MOS component shown in another embodiment.

[0050] Figure 9 This is a cross-sectional view of a MOS component shown in another embodiment.

[0051] Figure 10 This is a cross-sectional view of a MOS component shown in yet another embodiment.

[0052] Figure 11 for Figure 1 The diagram shows the hardware structure of the electronic device.

[0053] Explanation of reference numerals in the attached figures:

[0054] 1. Electronic device; 11. Processing component; 12. Memory; 13. Power supply component; 14. Multimedia component; 15. Audio component; 16. Input / output interface; 17. Sensor component; 18. Communication component; 10. Housing component; 20. Connecting device; 100. SIP module; 1000. Circuit board; 2000. MOS component; 2100. Substrate; 2110. First mating surface; 2120. Second mating surface; 2200. First MOS transistor; 2300. Second MOS transistor; 2400. First insulating layer; 2410. Mounting surface; 2420. First insulating body; 2430. Second insulating body; 2401. First clearance hole; 2402. Second clearance hole 2500, First conductive structure; 2510, First conductive part; 2511, First conductive protrusion; 2512, First conductive pad; 2520, First circuit layer; 2530, Third circuit layer; 2600, Second conductive structure; 2610, Second conductive part; 2611, Second conductive protrusion; 2612, Second conductive pad; 2620, Second circuit layer; 2700, Conductive line; 2800, Third MOSFET; 2900, Third conductive structure; 2910, Third conductive part; 3000, Second insulating layer; 4000, Electrical component; 200, Connecting board; 300, Flexible circuit board; 400, First electrical connector; 30, Control main board; 40, Functional module. Detailed Implementation

[0055] To make the objectives, technical solutions, and advantages of this disclosure clearer, the following detailed description is provided in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative and do not limit the scope of protection of this disclosure.

[0056] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of this disclosure.

[0057] For ease of understanding and explanation, some of the terms and technical terms that appear in the embodiments below this specification are explained.

[0058] A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a single electronic component that controls the flow of current through voltage. MOSFETs can be classified as enhancement-mode or depletion-mode, and as N-channel or P-channel. They are one of the most important components in modern electronic devices, widely used in switching circuits, amplifiers, digital circuits, and other applications.

[0059] A System-In-Package (SIP) module is a single standard package that integrates multiple active electronic components with different functions, optional passive devices, and other devices such as MEMS or optical devices to achieve a certain function, forming a system or subsystem.

[0060] Simply put, a SiP module is a fully functional complete system or subsystem that integrates one or more IC chips and passive components into a single package to achieve a basic and complete function.

[0061] Mobile phones, tablets, smartwatches, and other electronic devices have become indispensable technological products in people's lives, studies, and entertainment. With the development of electronic devices, they integrate more and more functions, while requiring miniaturization, which necessitates increasingly higher space utilization rates.

[0062] In related technologies, functional modules (such as batteries or camera modules) are connected to the control motherboard via connecting devices to achieve modular assembly and improve the assembly efficiency of electronic devices. The connecting devices typically integrate SiP modules for electrical connection to the control motherboard. However, traditional SiP modules are relatively large, occupying significant space on the control motherboard. This increases the complexity of the control motherboard layout and hinders cost reduction. For example, when the functional module is a battery, traditional battery protection circuitry is integrated into the connecting device, and some protection devices are integrated into the SiP module. The SiP module is electrically connected to a flexible circuit board, with a first electrical connector on the other side of the flexible circuit board, connecting to the control motherboard via this connector. Understandably, after the first electrical connector connects to the control motherboard, the SiP module on the opposite side of the first electrical connector will also be located within the control motherboard space. The SiP module requires at least two MOSFETs for on / off control, and traditional MOSFETs laid flat on the SiP module's circuit board require a large area of ​​the circuit board. This results in the large area of ​​the SIP module requiring more space on the control motherboard, increasing the difficulty of arranging the control motherboard and hindering the reduction of the cost of electronic devices.

[0063] Therefore, it is necessary to provide a MOS component. This MOS component can integrate at least two MOS transistors, resulting in a more compact structure. Applying this MOS component to a SIP module can reduce the area of ​​the SIP module, which helps to reduce the space occupied by the connection devices, simplify the layout of the control motherboard, and ultimately reduce the cost of electronic devices.

[0064] To better understand the MOS component of this disclosure, it is illustrated by an electronic device in which the MOS component is applied.

[0065] like Figure 1 As shown, in an embodiment of this disclosure, an electronic device 1 is provided, including a housing assembly 10, a control motherboard 30, a functional module 40, and a connection device 20. The control motherboard 30 is disposed on the housing assembly 10, and the functional module 40 is disposed on the housing assembly 10.

[0066] like Figures 1 to 3As shown, the connection device 20 includes a SIP module 100, a connection board 200, a flexible circuit board 300, and a first electrical connector 400. The connection board 200 is electrically connected to one end of the flexible circuit board 300, and the other end of the flexible circuit board 300 includes a first surface and a second surface opposite to the first surface. The first electrical connector 400 is fixed to the first surface and electrically connected to the flexible circuit board 300. The circuit board 1000 is fixed to the second surface and electrically connected to the flexible circuit board 300. The connection board 200 is electrically connected to functional devices, and the first electrical connector 400 is electrically connected to the control motherboard 30. Thus, the electronic device 1 achieves the connection between the functional module 40 and the control motherboard 30 through the connection device 20.

[0067] like Figure 4 as well as Figure 5 As shown, the SIP module 100 includes a circuit board 1000 and a MOS component 2000. The MOS component 2000 includes a substrate 2100, a first MOS transistor 2200, a second MOS transistor 2300, a first insulating layer 2400, a first conductive structure 2500, and a second conductive structure 2600. The second MOS transistor 2300 is fixed to the substrate 2100. The first MOS transistor 2200 is fixed to one of the substrate 2100 and the second MOS transistor 2300, and is stacked with the second MOS transistor 2300 along the thickness direction of the substrate 2100. The first insulating layer 2400 covers at least a portion of the substrate 2100, at least a portion of the first MOS transistor 2200, and at least a portion of the second MOS transistor 2300. The first conductive structure 2500 is disposed on at least one of the substrate 2100 and the first MOS transistor 2200, and is electrically connected to the first MOS transistor 2200. A portion of the first conductive structure 2500 is exposed outside the first insulating layer 2400. The second conductive structure 2600 is disposed on the substrate 2100 and electrically connected to the second MOSFET 2300. A portion of the second conductive structure 2600 is exposed outside the first insulating layer 2400. The MOSFET assembly 2000 is mounted on the circuit board 1000 through the first insulating layer 2400, and the first conductive structure 2500 and the second conductive structure 2600 are electrically connected to the circuit board 1000 respectively, thereby integrating at least two MOSFETs into the SIP module 100 to achieve on / off control.

[0068] During assembly of the MOS component 2000, the second MOS transistor 2300 is fixed to the substrate 2100. The first MOS transistor 2200 is fixed to one of the substrate 2100 and the second MOS transistor 2300, and is stacked with the second MOS transistor 2300 along the thickness direction of the substrate 2100. Simultaneously, a first insulating layer 2400 encapsulates at least a portion of the substrate 2100, at least a portion of the first MOS transistor 2200, and at least a portion of the second MOS transistor 2300, thereby encapsulating the substrate 2100, the first MOS transistor 2200, and the second MOS transistor 2300 into a single unit. Finally, the first MOS transistor 2200 and the second MOS transistor 2300 are connected to the circuit board 1000 through a first conductive structure 2500 partially exposed to the first insulating layer 2400 and a second conductive structure 2600 partially exposed to the first insulating layer 2400. This enables the modular assembly of the MOS component 2000 onto the SIP module 100. In this way, the MOS component 2000 can stack at least two MOS transistors along the thickness direction of the substrate 2100, making full use of the thickness space of the substrate 2100 to place the MOS transistors, reducing the space occupied on the substrate 2100, and making the MOS component 2000 more compact. The area space occupied by the MOS component 2000 on the circuit board 1000 is small, which in turn reduces the area of ​​the SIP module 100.

[0069] When the connecting device 20 is connected to the control motherboard 30 via the connector, the area of ​​the SIP module 100 becomes smaller, which allows the flexible circuit board 300 and the first electrical connector 400 to also be reduced in size. This reduces the area space occupied by the connecting device 20 on the control motherboard 30, lowers the difficulty of arranging the control motherboard 30, and thus helps to reduce the cost of the electronic device 1.

[0070] like Figure 2 , Figure 4 as well as Figure 5 As shown, this disclosure utilizes the space of the substrate and circuit board in the thickness direction (i.e., the Z-axis direction) to set more MOSFETs, thereby reducing the area occupied by the MOSFETs in the X-axis direction and thus effectively reducing the area occupied by the SIP in the X-axis direction.

[0071] It should be noted that the first conductive structure 2500 and / or the second conductive structure 2600 exposed to the first insulating layer 2400 may be provided by directly protruding from the first insulating layer 2400, or the first insulating layer 2400 may be provided with a clearance groove or clearance hole to avoid the first conductive structure 2500, so that the first conductive structure 2500 and / or the second conductive structure 2600 can be electrically connected to other electrical connection structures.

[0072] In some embodiments, the control board is provided with a second electrical connector (not shown) that is detachably connected to the first electrical connector. One of the first and second electrical connectors is a female connector, and the other is a male connector that is detachably electrically connected to the female connector.

[0073] It should be noted that the first electrical connector can be implemented in various ways, including but not limited to electrical plugs, Type-A connectors, Type-B connectors, Type-C connectors, Lightning connectors, etc., which can be detachably electrically connected to the second connector (which is an electrical interface); or electrical interfaces such as Type-A interfaces, Type-B interfaces, Type-C interfaces, Lightning interfaces, etc., which can be detachably electrically connected to the second electrical connector (which is an electrical connector).

[0074] like Figure 4 As shown, in some embodiments, the SIP module 100 further includes at least two electrical components 4000 disposed on the circuit board 1000, and the MOS component 2000 is used to control the on / off state of at least one electrical component 4000. Thus, the on / off control of at least one electrical component 4000 can be achieved using the MOS component 2000, enabling the SIP module 100 to perform on / off control functions.

[0075] In some embodiments, the second MOSFET is connected in parallel with the first MOSFET in the SIP module, so that the on / off state of the relevant electrical components can be controlled independently.

[0076] For example, electrical components include protective devices for protecting the battery. Thus, overcharge and over-discharge protection and charge / discharge overcurrent protection are achieved by controlling the on and off states of the first and second MOSFETs. The protective devices include at least one of resistors, capacitors, and fuel gauges.

[0077] In some embodiments, the protection device includes a fuel gauge and a capacitor.

[0078] In some embodiments, the functional module includes a battery, and the connection board includes a battery protection board. Thus, at least a portion of the battery protection circuitry is integrated into the battery protection board, achieving overcharge and over-discharge protection and charge / discharge overcurrent protection by controlling the on / off state of the first and second MOSFETs.

[0079] Optionally, in some embodiments, the battery protection circuit includes a power circuit, a protection unit, and a charge detection unit. The power circuit consists of a battery cell, a resistor, and a MOSFET assembly. The protection unit consists of two lithium-ion battery protection ICs and their peripheral resistors and capacitors, achieving overcharge and over-discharge protection and overcurrent protection by controlling the conduction and disconnection of at least two MOSFETs. The charge detection unit consists of a fuel gauge and its peripheral resistors and capacitors, calculating the charge level by detecting the voltage of a precision resistor and the voltage of the battery cell.

[0080] like Figure 4 As shown, in some embodiments, the SIP module 100 includes a second insulating layer 3000 that at least encloses the circuit board 1000 and the MOS assembly 2000. Thus, the second insulating layer 3000 can further improve the protection performance of the MOS transistor.

[0081] In conjunction with the aforementioned embodiment of electrical component 4000, the second insulating layer 3000 can also enclose electrical component 4000.

[0082] It should be noted that the materials of the second insulating layer include, but are not limited to, waterproof silicone, waterproof adhesive, waterproof insulating adhesive, UV adhesive, UF adhesive, etc., and can be applied to the circuit board in various ways, such as hot melt curing, coating, injection molding, etc.

[0083] like Figure 4 As shown in one example, the second insulating layer encapsulates electrical components and MOS assemblies onto the circuit board via injection molding. This provides protection and improves the neatness of the SIP module, making it easier to assemble.

[0084] like Figure 4 As shown, in some embodiments, the MOS component 2000 includes at least two MOS transistors, which are spaced apart on the circuit board 1000. Thus, at least four MOS transistors can be integrated on the circuit board 1000 of the SIP module 100 to meet the on / off control needs of multiple electrical components 4000.

[0085] It should be noted that the materials of the first insulating layer include, but are not limited to, waterproof silicone, waterproof adhesive, waterproof insulating adhesive, UV adhesive, UF adhesive, etc., and can be applied to the circuit board in various ways, such as hot melt curing, coating, injection molding, etc.

[0086] like Figure 5 As shown, in some embodiments, the first insulating layer 2400 encapsulates the first MOSFET 2200 and the second MOSFET 2300 on the substrate 2100. Thus, by encapsulating the first MOSFET 2200, the second MOSFET 2300, and the substrate 2100 with the first insulating layer 2400, the MOSFET component 2000 has good protective performance.

[0087] like Figure 5 As shown in one example, the first insulating layer 2400 encapsulates the first MOSFET 2200, the second MOSFET 2300, and the substrate 2100 by injection molding. Thus, by using injection molding to encapsulate the first insulating layer 2400 onto the substrate 2100, the first MOSFET 2200 and the second MOSFET 2300 are encapsulated and protected, which not only provides protection but also improves the regularity of the MOSFET assembly 2000.

[0088] like Figures 5 to 9 As shown, in some embodiments, the first insulating layer 2400 includes a mounting surface 2410, and the substrate 2100 includes a first mating surface 2110 facing the mounting surface 2410. The first conductive structure 2500 includes a first conductive portion 2510, which is exposed on the mounting surface 2410 and insulated from the second conductive structure 2600. Thus, by providing the first conductive portion 2510, the first MOSFET 2200 is easily conductively connected to the circuit board 1000, allowing the first MOSFET 2200 to be integrated into the SIP module 100, achieving on / off control.

[0089] like Figures 5 to 9 As shown, in some embodiments, the second conductive structure 2600 includes a second conductive portion 2610 protruding from the first mating surface 2110 and a second circuit layer 2620 disposed on the substrate 2100. The second MOSFET 2300 is electrically connected to the second conductive portion 2610 through the second circuit layer 2620. The second conductive portion 2610 is at least partially exposed on the mounting surface 2410 and is insulated from the first conductive structure 2500. Thus, the second MOSFET 2300 is electrically connected to the second conductive portion 2610 through the second circuit layer 2620, and is electrically connected to other conductive structures using the second conductive portion 2610, thereby achieving a conductive connection between the second MOSFET 2300 and the circuit board 1000, allowing the first MOSFET 2200 to be integrated into the SIP module 100, realizing on / off control.

[0090] In addition, the second circuit layer 2620 is provided so that the positions of the second conductive part 2610 and the second MOS transistor 2300 can be flexibly arranged on the substrate 2100, making them easy to arrange.

[0091] Reference Figure 5 As shown, in some embodiments, the first MOSFET 2200 is fixed to the first mating surface 2110 and insulated from the substrate 2100. A first conductive portion 2510 is disposed on the first MOSFET 2200. Thus, when the mounting surface 2410 of the MOSFET assembly 2000 is mounted on the circuit board 1000, the first MOSFET 2200 can be directly conductively connected to the circuit board 1000 through the first conductive portion 2510, facilitating the integration of the first MOSFET 2200 into the SIP module 100 for on / off control.

[0092] Furthermore, such as Figure 6 As shown, in some embodiments, the second MOSFET 2300 is stacked and fixed between the first MOSFET 2200 and the substrate 2100, and is insulated from the first MOSFET 2200. In this way, the second MOSFET 2300 can be sandwiched between the first MOSFET 2200 and the substrate 2100, so that the two MOSFETs are compactly integrated on the first mating surface 2110.

[0093] Understandably, when a MOS needs to integrate more MOS transistors, other MOS transistors can be flexibly placed on the other side of the substrate 2100.

[0094] like Figure 7 As shown, in some embodiments, the first conductive portion 2510 is disposed on the first mating surface 2110, and the first MOS transistor 2200 is fixedly disposed on the first mating surface 2110. The first conductive structure 2500 further includes a first circuit layer 2520 disposed on the substrate 2100, and the first circuit layer 2520 is insulated from the second conductive structure 2600. The first MOS transistor 2200 is electrically connected to the first conductive portion 2510 through the first circuit layer 2520. Thus, the first MOS transistor 2200 is electrically connected to the first conductive portion 2510 through the first circuit layer 2520, and the first conductive portion 2510 is used to conduct electricity to other conductive structures, thereby realizing the conduction of electricity between the first MOS transistor 2200 and other conductive structures. The provision of the first circuit layer 2520 allows the positions of the first conductive portion 2510 and the first MOS transistor 2200 to be flexibly arranged on the substrate 2100, making them easy to arrange.

[0095] It should be noted that "the first MOSFET 2200 and the second MOSFET 2300 are stacked along the thickness direction of the substrate 2100" includes both direct stacking and indirect stacking of the first MOSFET 2200 and the second MOSFET 2300. Figure 5 or Figure 7 As shown, in some embodiments, the substrate 2100 further includes a second mating surface 2120 disposed opposite to the first mating surface 2110. The second MOSFET 2300 is fixed to the second mating surface 2120 and electrically connected to the second circuit layer 2620. In this way, the second MOSFET 2300 is stacked with the first MOSFET 2200 through the substrate 2100, and the substrate 2100 can be used for spacing, reducing the assembly difficulty.

[0096] In addition, "Cascading settings" include partial cascading settings and full cascading settings.

[0097] like Figure 5 or Figure 7As shown, in some embodiments, the first insulating layer 2400 includes a first insulating body 2420 and a second insulating body 2430. The first insulating body 2420 is fixed to the first mating surface 2110 and encapsulates the first MOS transistor 2200. The first insulating body 2420 has a mounting surface 2410. The second insulating body 2430 is fixed to the second mating surface 2120 and encapsulates the second MOS transistor 2300. Thus, by using the first insulating body 2420 to encapsulate the first MOS transistor 2200 on the first mating surface 2110, and then using the second insulating body 2430 to encapsulate the second MOS transistor 2300 on the second mating surface 2120, the packaging difficulty can be reduced, and the packaging cost of the MOS component 2000 can be reduced.

[0098] like Figure 8 As shown, in some embodiments, the substrate 2100 further includes a second mating surface 2120 disposed opposite to the first mating surface 2110, and the second MOS transistor 2300 is fixed to the second mating surface 2120. A first conductive portion 2510 and a second conductive portion 2610 are spaced apart from each other on the first mating surface 2110. A first MOS transistor 2200 is fixed to and insulated from the second MOS transistor 2300. The first conductive structure 2500 includes a third circuit layer 2530 disposed on the substrate 2100 and a conductive line 2700 fixed to the first insulating layer 2400. The third circuit layer 2530 is insulated from the second conductive structure 2600 and electrically connected to the first conductive portion 2510. The first MOS transistor 2200 is electrically connected to the third circuit layer 2530 via the conductive line 2700. In this way, the first MOSFET 2200 and the second MOSFET 2300 can also be stacked on the second mating surface 2120. The first MOSFET 2200 is electrically connected to the third circuit layer 2530 through the conductive line 2700, and is electrically connected to the first conductive part 2510. This makes the two MOSFETs as far away from the circuit board 1000 as possible, reducing the difficulty of arranging the circuit board 1000.

[0099] It should be noted that the first conductive part and / or the second conductive part exposed on the mounting surface includes being directly protruding from the first insulating layer, or the first insulating layer having a clearance groove or clearance hole to avoid the first conductive part, as long as the first conductive part and / or the second conductive part can be electrically connected to other electrical connection structures.

[0100] like Figure 5 , Figure 6 , Figure 7 or Figure 8As shown, in some embodiments, the first conductive portion 2510 includes a first conductive protrusion 2511, a portion of which is exposed outside the first insulating layer 2400. This facilitates the conductive connection between the first MOSFET 2200 and the circuit board 1000 using the first conductive protrusion 2511, and makes it easier to integrate the first MOSFET 2200 into the SIP module 100, thus improving the assembly efficiency of the SIP module 100.

[0101] like Figure 5 , Figure 6 , Figure 7 or Figure 8 As shown, in some embodiments, the second conductive portion 2610 includes a second conductive protrusion 2611, a portion of which is exposed outside the first insulating layer 2400. This facilitates the conductive connection between the second MOSFET 2300 and the circuit board 1000 using the second conductive protrusion 2611, and makes it easier to integrate the second MOSFET 2300 into the SIP module 100, thus improving the assembly efficiency of the SIP module 100.

[0102] It should be noted that the first conductive bump 2511 and / or the second conductive bump 2611 can be implemented in various ways, including but not limited to forming solder balls.

[0103] like Figure 9 As shown, in some embodiments, the first conductive portion 2510 includes a first conductive pad 2512, and the first insulating layer 2400 is provided with a first clearance hole 2401 to avoid the first conductive pad 2512. Thus, by providing a conductive protrusion on the circuit board 1000 and inserting the conductive protrusion into the first clearance hole 2401, the first conductive pad 2512 is electrically connected, and the first MOSFET 2200 can also be electrically connected to the circuit board 1000, making it easy to integrate the first MOSFET 2200 into the SIP module 100.

[0104] like Figure 9 As shown, in some embodiments, the second conductive portion 2610 includes a second conductive pad 2612, and the first insulating layer 2400 is provided with a second clearance hole 2402 to avoid the second conductive pad 2612. Thus, by providing a conductive protrusion on the circuit board 1000 and inserting it into the first clearance hole 2401, the first conductive pad 2512 can be electrically connected, and the first MOSFET 2200 can also be electrically connected to the circuit board 1000, making it easy to integrate the first MOSFET 2200 into the SIP module 100.

[0105] For reference Figure 9 and combined Figure 4It is understood that in some embodiments, the first conductive part 2510 and the second conductive part 2610 are both implemented in the form of conductive pads and are electrically connected through conductive protrusions on the circuit board 1000, so that the circuit board 1000 and the mounting surface 2410 fit more tightly, making it easier to securely fix the SIP module 100 on the circuit board 1000 and ensuring reliable electrical connection between the two.

[0106] In other embodiments, after the first conductive part 2510 and the second conductive part 2610 are electrically connected to the circuit board 1000, an adhesive layer is further provided to reliably bond the SIP module 100 to the circuit board 1000, thereby improving the reliability of their fixation and ensuring reliable electrical connection.

[0107] like Figure 10 As shown, in some embodiments, the MOS component 2000 further includes at least one third MOS transistor 2800. The at least one third MOS transistor 2800 is insulated from at least one of the first MOS transistor 2200, the second MOS transistor 2300, and the substrate 2100. The first insulating layer 2400 can also enclose the at least one third MOS transistor 2800. The MOS component 2000 also includes a third conductive structure 2900 electrically connected to the third MOS transistor 2800. The third conductive structure 2900 is disposed in at least one of the substrate 2100, the first MOS transistor 2200, and the second MOS transistor 2300, with a portion of the third conductive structure 2900 exposed outside the first insulating layer 2400.

[0108] It should be noted that the number of the third MOSFET 2800 can be selected according to actual needs. That is, as... Figure 10 As shown, at least three MOS transistors can be stacked along the thickness direction of the substrate (i.e., the Z-axis direction). Furthermore, combined with... Figure 6 and Figure 8 It is understood that at least four MOS transistors can be stacked in the thickness direction of the substrate.

[0109] It should be noted that the specific implementation of the third conductive structure 2900 can be achieved by referring to the first conductive structure 2500.

[0110] like Figure 10 As shown, the third conductive structure 2900 includes a third conductive portion 2910. The third conductive portion 2910 is exposed on the mounting surface 2410. Thus, by providing the third conductive portion 2910 exposed on the mounting surface 2410, it is convenient for the third MOS transistor 2800 to make conductive connections with other conductive structures.

[0111] The electronic device 1 disclosed herein includes ranging devices, scanning devices, shooting devices, handheld devices, vehicle-mounted devices, wearable devices, monitoring devices, cellular phones, smartphones, personal digital assistant computers, tablet computers, laptop computers, camcorders, video recorders, cameras, vehicle-mounted computers, and other devices with video recording capabilities.

[0112] Reference Figure 11 As shown, in some embodiments, the electronic device 10 further includes at least one or more of the following components: a processing component 11, a memory 12, a power supply component 13, a multimedia component 14, an audio component 15, an input / output interface 16, a sensor component 17, and a communication component 18.

[0113] Processing components typically control the overall operation of electronic devices, such as operations associated with display, telephone calls, data communication, camera operation, and recording. A processing component includes at least one or more processors to execute instructions to complete all or part of the steps described above. Furthermore, a processing component includes at least one or more modules to facilitate interaction between the processing component and other components. For example, a processing component may include at least a multimedia module to facilitate interaction between multimedia components and the processing component.

[0114] Memory is configured to store various types of data to support the operation of electronic devices. Examples of this data include instructions for any application or method used to operate on the electronic device, contact data, phonebook data, messages, pictures, videos, etc. Memory can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory, read-only memory, magnetic storage, flash memory, disk, or optical disk.

[0115] Power supply components provide power to various components of electronic devices. A power supply component includes at least a power management system, one or more power supplies, and other components associated with generating, managing, and distributing power to electronic devices.

[0116] The multimedia component includes the display module of this disclosure, facilitating human-computer interaction. If the display module includes a touch panel, the display module can be implemented as a touchscreen to receive input signals from the user. The touch panel includes one or more touch sensors to sense touches, swipes, and gestures on the touch panel. The touch sensors can sense not only the boundaries of touch or swipe actions but also the duration and pressure associated with the touch or swipe operation. In some embodiments, the multimedia component includes a front-facing camera and / or a rear-facing camera. When the electronic device is in an operating mode, such as a shooting mode or a video mode, the front-facing camera and / or the rear-facing camera can receive external multimedia data. Each front-facing camera and rear-facing camera can be a fixed optical lens system or have focal length and optical zoom capabilities.

[0117] The audio component is configured to output and / or input audio signals. For example, the audio component includes a microphone (MIC) configured to receive external audio signals when the electronic device is in an operating mode, such as call mode, recording mode, or voice recognition mode. The received audio signals may be further stored in memory or transmitted via a communication component. In some embodiments, the audio component also includes a speaker for outputting audio signals.

[0118] The input / output interface provides an interface between the processing component and the peripheral interface module, which can be a keyboard, click wheel, buttons, etc. These buttons may include, but are not limited to: home button, volume buttons, start button, and lock button.

[0119] The sensor assembly includes one or more sensors for providing state assessments of various aspects of the electronic device. For example, the sensor assembly can detect the on / off state of the electronic device, the relative positioning of components such as the display and keypad of the electronic device, changes in the position of the electronic device or a component of the electronic device, the presence or absence of user contact with the electronic device, the orientation or acceleration / deceleration of the electronic device, and temperature changes of the electronic device. The sensor assembly includes at least a proximity sensor configured to detect the presence of nearby objects without any physical contact. The sensor assembly also includes at least a photosensitizing element, such as a CMOS or CCD image sensor, for use in imaging applications. In some embodiments, the sensor assembly also includes at least an accelerometer, a gyroscope, a magnetometer, a pressure sensor, or a temperature sensor.

[0120] The communication component is configured to facilitate wired or wireless communication between electronic devices and other devices. The electronic device can access wireless networks based on communication standards, such as WiFi, 2G, 3G, 4G, or 6G, or combinations thereof. In one exemplary embodiment, the communication component receives broadcast signals or broadcast-related information from an external broadcast management system via a broadcast channel. In one exemplary embodiment, the communication component also includes a Near Field Communication (NFC) module to facilitate short-range communication. For example, the NFC module may be implemented based on Radio Frequency Identification (RFID) technology, Infrared Data Association (IrDA) technology, Ultra-Wideband (UWB) technology, Bluetooth (BT) technology, and other technologies.

[0121] In the description of this disclosure, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this disclosure.

[0122] Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first," "second," etc., may explicitly or implicitly include at least one of that feature. In the description of this disclosure, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0123] In this disclosure, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this disclosure according to the specific circumstances.

[0124] In this disclosure, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0125] It should be noted that when a component is referred to as "fixed to," "set on," "fixed to," or "mounted on" another component, it can be directly on the other component or there may be an intervening component. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be an intervening component.

[0126] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0127] The above embodiments are merely illustrative of several implementation methods of this disclosure, and their descriptions are relatively specific and detailed. However, they should not be construed as limiting the scope of the utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the inventive concept of this disclosure, and these modifications and improvements all fall within the protection scope of this disclosure.

Claims

1. A MOS device, characterized by, include: substrate; First MOSFET; The second MOS transistor is fixed to the substrate, and the first MOS transistor is fixed to one of the substrate and the second MOS transistor, and is stacked with the second MOS transistor along the thickness direction of the substrate. A first insulating layer is disposed covering at least a portion of the substrate, at least a portion of the first MOS transistor, and at least a portion of the second MOS transistor; A first conductive structure is disposed on at least one of the substrate and the first MOS transistor and is electrically connected to the first MOS transistor, with a portion of the first conductive structure exposed outside the first insulating layer. as well as A second conductive structure is disposed on the substrate and electrically connected to the second MOS transistor, with a portion of the second conductive structure exposed outside the first insulating layer.

2. The MOS assembly of claim 1, wherein, The first insulating layer includes a mounting surface, and the substrate includes a first mating surface disposed toward the mounting surface; The first conductive structure includes a first conductive portion, at least a portion of which is exposed on the mounting surface and is insulated from the second conductive structure. And / or, the second conductive structure includes a second conductive portion protruding from the first mating surface and a second circuit layer disposed on the substrate, the second MOS transistor being electrically connected to the second conductive portion through the second circuit layer, the second conductive portion being at least partially exposed on the mounting surface and insulated from the first conductive structure.

3. The MOS component according to claim 2, characterized in that, The first conductive portion is disposed on the first mating surface, and the first MOS transistor is fixed on the first mating surface; the first conductive structure further includes a first circuit layer disposed on the substrate, the first circuit layer is insulated from the second conductive structure, and the first MOS transistor is electrically connected to the first conductive portion through the first circuit layer.

4. The MOS component according to claim 2, characterized in that, The first MOS transistor is fixed to the first mating surface and is insulated from the substrate, and the first conductive part is disposed on the first MOS transistor.

5. The MOS component according to claim 4, characterized in that, The second MOS transistor is stacked and fixed between the first MOS transistor and the substrate, and is insulated from the first MOS transistor.

6. The MOS component according to any one of claims 3 to 5, characterized in that, The substrate further includes a second mating surface disposed opposite to the first mating surface, the second MOS transistor is fixed on the second mating surface and electrically connected to the second circuit layer.

7. The MOS component according to claim 6, characterized in that, The first insulating layer includes a first insulating body and a second insulating body. The first insulating body is fixed to the first mating surface and wraps around the first MOS transistor. The first insulating body is provided with the mounting surface. The second insulating body is fixed to the second mating surface and wraps around the second MOS transistor.

8. The MOS component according to claim 2, characterized in that, The substrate further includes a second mating surface disposed opposite to the first mating surface, the second MOS transistor being fixed to the second mating surface, and the first conductive portion and the second conductive portion being disposed at a distance from each other on the first mating surface; the first MOS transistor being fixed to the second MOS transistor and insulated from the second MOS transistor; the first conductive structure includes a third circuit layer disposed on the substrate and a conductive line fixed to a first insulating layer, the third circuit layer being insulated from the second conductive structure and electrically connected to the first conductive portion, and the first MOS transistor being electrically connected to the third circuit layer through the conductive line.

9. The MOS component according to claim 2, characterized in that, The first conductive portion includes a first conductive protrusion, a portion of which is exposed outside the first insulating layer; Alternatively, the first conductive portion includes a first conductive pad, and the first insulating layer is provided with a first clearance hole to avoid the first conductive pad.

10. The MOS component according to claim 2, characterized in that, The second conductive portion includes a second conductive protrusion, a portion of which is exposed outside the first insulating layer; Alternatively, the second conductive portion may include a second conductive pad, and the first insulating layer may have a second clearance hole to avoid the second conductive pad.

11. The MOS component according to claim 1, characterized in that, The first insulating layer encapsulates the first MOS transistor and the second MOS transistor within the substrate.

12. The MOS component according to claim 1, characterized in that, The MOS component further includes at least one third MOS transistor, which is insulated from at least one of the first MOS transistor, the second MOS transistor, and the substrate. The first insulating layer can also enclose the at least one third MOS transistor. The MOS component further includes a third conductive structure electrically connected to the third MOS transistor. The third conductive structure is disposed in at least one of the substrate, the first MOS transistor, and the second MOS transistor, and a portion of the third conductive structure is exposed outside the first insulating layer.

13. A SIP module, characterized in that, The invention includes a circuit board and a MOS component as described in any one of claims 1 to 12, wherein the MOS component is mounted on the circuit board through the first insulating layer, and the first conductive structure and the second conductive structure are electrically connected to the circuit board respectively.

14. The SIP module according to claim 13, characterized in that, The SIP module includes a second insulating layer that encloses the circuit board and the MOS component; And / or, the MOS components include at least two, and are spaced apart on the circuit board; And / or, the SIP module further includes at least two electrical components disposed on the circuit board, the MOS assembly being used to control the on / off state of at least one of the electrical components.

15. A connecting device, characterized in that, The device includes a connecting plate, a flexible circuit board, a first electrical connector, and the SIP module as described in claim 13 or 14. The connecting plate is electrically connected to one end of the flexible circuit board. The other end of the flexible circuit board includes a first surface and a second surface disposed opposite to the first surface. The first electrical connector is fixed to the first surface and electrically connected to the flexible circuit board. The circuit board is fixed to the second surface and electrically connected to the flexible circuit board.

16. An electronic device, characterized in that, The device includes a housing assembly, a control motherboard, a functional module, and the connection device as described in claim 15. The control motherboard is disposed on the housing assembly, the functional module is disposed on the housing assembly and electrically connected to the connection board, and the first electrical connector is electrically connected to the control motherboard.

17. The electronic device according to claim 16, characterized in that, The functional module includes a battery, and the connection board includes a battery protection board.

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