A flip-chip Mini-LED and its light-emitting device

Abstract

This invention provides a flip-chip Mini-LED and a light-emitting device, relating to the field of Mini-LED technology. The transparent conductive layer beneath the main body of the P-electrode is patterned to form a first groove exposing a portion of the current-blocking layer. With the main body of the electrode at least filling the first groove, the contact area between the main body and the transparent conductive layer is reduced, ensuring that the main body primarily contacts the current-blocking layer. During reflow soldering with the substrate, this improves the adhesion stability of the P-electrode, reduces chip failure caused by deformation stress, and allows for a suitable increase in push force, improving the packaging effect. Since the electrode fingers of the P-electrode are still located on the transparent conductive layer, this design essentially does not affect the current conduction at the P-pad, meaning it does not negatively impact the device's photoelectric performance.

Description

Technical Field

[0001] This application relates to the field of Mini-LED technology, and more particularly to a flip-chip Mini-LED and a light-emitting device. Background Technology

[0002] With the widespread application of light-emitting diodes (LEDs) in various products such as general lighting, electrical components, and large backlight components, mini-light-emitting diodes (Mini-LEDs) are particularly favored in the field of display panels due to their advantages such as small size, high light source utilization, and long lifespan.

[0003] With the increasingly widespread application of Mini-LEDs, ensuring chip reliability and enhancing product competitiveness has become a crucial issue in the industry. Currently, in the manufacturing process of flip-chip Mini-LEDs, the P-electrode at the P-pad is in direct contact with the transparent conductive layer (also known as the ITO layer in the industry). Due to the poor adhesion between the P-electrode and the transparent conductive layer, the overall structure of the P-pad and P-electrode is unstable during the reflow soldering and packaging process of the flip-chip Mini-LED and the substrate. This makes the chip prone to failure due to deformation stress, especially under high thrust. Utility Model Content

[0004] In view of the above problems, this application provides a flip-chip Mini-LED, its fabrication method, and a light-emitting device, which improves the structural stability of the flip-chip Mini-LED during the reflow soldering and packaging process with the substrate. The specific solution is as follows:

[0005] A first aspect of this application provides a flip-chip Mini-LED, the flip-chip Mini-LED comprising:

[0006] Substrate;

[0007] An N-type semiconductor layer, a multiple quantum well layer, and a P-type semiconductor layer are sequentially stacked on one side of the substrate;

[0008] A current blocking layer and a transparent conductive layer are located on the side of the P-type semiconductor layer opposite to the substrate, the current blocking layer being located between the transparent conductive layer and the P-type semiconductor layer; the transparent conductive layer has a first groove exposing a portion of the current blocking layer;

[0009] The P electrode includes an electrode body portion and a plurality of electrode finger portions extending from the electrode body portion; the electrode body portion at least fills the first groove, and the electrode finger portions are located on the surface of the transparent conductive layer opposite to the substrate;

[0010] The P pad is in contact with the electrode body portion.

[0011] Preferably, in the above-described flip-chip Mini-LED, the first groove further extends through the current blocking layer, exposing a portion of the surface of the P-type semiconductor layer;

[0012] The electrode body portion is in contact with the exposed surface of the P-type semiconductor layer.

[0013] Preferably, in the above-described flip-chip Mini-LED, the first groove includes multiple independent groove units.

[0014] Preferably, in the above-described flip-chip Mini-LED, the shape of some of the recessed units is different from the shape of the other portion of the recessed units.

[0015] Preferably, in the above-described flip-chip Mini-LED, the region where the plurality of independent recessed units are located includes an edge region and a middle region; the size of the recessed unit located in the edge region is larger than the size of the recessed unit located in the middle region.

[0016] Preferably, in the above-described flip-chip Mini-LED, the flip-chip Mini-LED further includes:

[0017] A DBR layer is located on the side of the transparent conductive layer opposite to the substrate; wherein the DBR layer has a second groove that exposes a portion of the electrode body portion, and the P pad contacts the electrode body portion through the second groove.

[0018] Preferably, in the above-described flip-chip Mini-LED, the flip-chip Mini-LED further includes:

[0019] A third groove extends through the multiple quantum well layer and the P-type semiconductor layer, the third groove exposing a portion of the surface of the N-type semiconductor layer;

[0020] The flip-chip Mini-LED also includes: an N electrode and an N pad;

[0021] The N-electrode is in contact with the exposed surface of the N-type semiconductor layer;

[0022] The DBR layer also has a fourth groove that exposes a portion of the N electrode, through which the N pad contacts the N electrode.

[0023] A second aspect of this application provides a method for fabricating a flip-chip Mini-LED, the method comprising:

[0024] Provide a substrate;

[0025] An N-type semiconductor layer, a multiple quantum well layer, and a P-type semiconductor layer are sequentially grown on one side of the substrate;

[0026] A current blocking layer and a transparent conductive layer are formed on the side of the P-type semiconductor layer away from the substrate, with the current blocking layer located between the transparent conductive layer and the P-type semiconductor layer;

[0027] At least the transparent conductive layer is processed to form a first groove that exposes a portion of the current blocking layer;

[0028] A P-electrode is formed, the P-electrode including an electrode body portion and a plurality of electrode finger portions extending from the electrode body portion; the electrode body portion at least fills the first groove, and the electrode finger portions are located on the side surface of the transparent conductive layer opposite to the substrate;

[0029] A P-pad is formed, which contacts the electrode body portion.

[0030] Preferably, in the above-described method for fabricating a flip-chip Mini-LED, the first groove further extends through the current blocking layer, exposing a portion of the surface of the P-type semiconductor layer;

[0031] The electrode body portion is in contact with the exposed surface of the P-type semiconductor layer.

[0032] A third aspect of this application provides a light-emitting device, which includes any of the above-described flip-chip Mini-LEDs.

[0033] By employing the above technical solution, this application provides a flip-chip Mini-LED and its fabrication method, as well as a high-voltage chip. The transparent conductive layer beneath the main body of the P-electrode is patterned to form a first groove exposing a portion of the current-blocking layer. With the main body of the electrode at least filling the first groove, the contact area between the main body and the transparent conductive layer is reduced, meaning the main body primarily contacts the current-blocking layer. Since the adhesion force between the main body and the current-blocking layer is greater than that between the main body and the transparent conductive layer, this structural design improves the adhesion stability of the P-electrode during the reflow soldering encapsulation of the flip-chip Mini-LED and substrate. This results in higher stability of the overall structure of the P-pad and P-electrode, ensuring that the current received by the P-pad can be effectively transmitted to the P-type semiconductor layer. This reduces chip failure caused by deformation stress during the reflow soldering encapsulation of the flip-chip Mini-LED and substrate, and can also appropriately increase the thrust value during the encapsulation process, thereby improving the encapsulation effect.

[0034] Since only the transparent conductive layer below the main body of the P electrode is patterned, and the electrode fingers of the P electrode are still located on the side of the transparent conductive layer facing away from the substrate, this design will not affect the current conduction at the P pad, that is, it will not have a negative impact on the optoelectronic performance of the flip-chip Mini-LED. Attached Figure Description

[0035] The above and other features, advantages, and aspects of the embodiments of this disclosure will become more apparent from the accompanying drawings and the following detailed description. Throughout the drawings, the same or similar reference numerals denote the same or similar elements. It should be understood that the drawings are schematic, and the originals and elements are not necessarily drawn to scale.

[0036] Figure 1 This is a schematic diagram of the structure of a flip-chip Mini-LED provided in an embodiment of the present invention;

[0037] Figure 2 This is a schematic diagram of another flip-chip Mini-LED provided in an embodiment of the present invention;

[0038] Figure 3 A schematic diagram of a high-voltage flip-chip Mini-LED provided for an embodiment of this utility model;

[0039] Figure 4 A schematic diagram of another high-voltage flip-chip Mini-LED provided in this embodiment of the present invention;

[0040] Figure 5A schematic diagram of one possible implementation of the first groove provided in an embodiment of this utility model;

[0041] Figure 6 A schematic diagram of another possible implementation of the first groove provided in an embodiment of this utility model;

[0042] Figure 7 This is a schematic flowchart illustrating a method for fabricating a flip-chip Mini-LED according to an embodiment of the present invention. Detailed Implementation

[0043] The embodiments of this application are described below with reference to the accompanying drawings. The terminology used in the implementation section of this application is only for explaining specific embodiments and is not intended to limit the application. Those skilled in the art will recognize that, with technological advancements and the emergence of new scenarios, the technical solutions provided in the embodiments of this application are also applicable to similar technical problems.

[0044] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0045] It should be noted that the directional terms appearing in this utility model are based on the relative positional relationships shown in the accompanying drawings and should not be taken as absolute limitations on this application.

[0046] refer to Figure 1 , Figure 1 This is a schematic diagram of a flip-chip Mini-LED provided in an embodiment of the present invention. The flip-chip Mini-LED provided in this embodiment of the present invention includes: a substrate 11.

[0047] An N-type semiconductor layer 12, a multi-quantum well layer 13, and a P-type semiconductor layer 14 are stacked sequentially on one side of the substrate 11.

[0048] A current blocking layer 15 and a transparent conductive layer 16 are located on the side of the P-type semiconductor layer 14 opposite to the substrate 11. The current blocking layer 15 is located between the transparent conductive layer 16 and the P-type semiconductor layer 14. The transparent conductive layer 16 has a first groove that exposes a portion of the current blocking layer 15.

[0049] P electrode 17, the P electrode 17 includes an electrode body portion and a plurality of electrode finger portions extending from the electrode body portion; the electrode body portion at least fills the first groove, and the electrode finger portions are located on the side surface of the transparent conductive layer 16 opposite to the substrate 11.

[0050] P pad 18 is in contact with the electrode body portion.

[0051] Specifically, in this embodiment of the invention, the light-emitting surface of the flip-chip Mini-LED is one side of the substrate 11. Therefore, in this embodiment of the invention, the substrate 11 is preferably a substrate with high light transmittance. The N-type semiconductor layer 12 is an N-type doped semiconductor layer, and the P-type semiconductor layer 14 is a P-type doped semiconductor layer. For example, the N-type semiconductor layer 12 can be an N-type doped GaN layer, and the P-type semiconductor layer 14 can be a P-type doped GaN layer. It should be noted that this embodiment of the invention only uses GaN layer as an example of semiconductor layer. Obviously, the semiconductor layer can also be a semiconductor layer of other semiconductor materials.

[0052] The core structure of a flip-chip Mini-LED is a PN junction. When a forward bias is applied to the PN junction, electrons flow from the N-type region to the P-type region, and holes flow from the P-type region to the N-type region. These charge carriers recombine near the PN junction, releasing energy and generating photons to emit light. The multiple quantum well layer 13 is a key structure in flip-chip Mini-LEDs, its role being to improve the recombination efficiency and luminous efficiency. The multiple quantum well layer 13 consists of alternating quantum wells (QWs) and quantum barriers (QBs). Typically, the band gap of the quantum wells is smaller than that of the quantum barriers. This confines electrons and holes within the quantum wells under the influence of an applied electric field, thereby increasing the recombination probability of electrons and holes and thus improving luminous efficiency.

[0053] In this embodiment of the invention, the transparent conductive layer 16 includes, but is not limited to, an ITO (Indium Tin Oxide) layer. ITO is a transparent material with high conductivity, high visible light transmittance, and good chemical stability. The ITO layer has high transparency in the visible light range, typically exceeding 80%, and also possesses good electrical conductivity. This allows the ITO layer to be used as a transparent conductive layer for current transmission in flip-chip Mini-LEDs.

[0054] In this embodiment of the present invention, the material of the current blocking layer 15 includes, but is not limited to, insulating materials such as silicon oxide and silicon nitride. The current blocking layer 15 can block the current from spreading downwards to the P electrode 17, reduce the current density flowing to the active region below the P electrode 17, and guide the current to a region away from the P electrode 17, thereby reducing the problems caused by the light absorption and light blocking of the P electrode 17 metal, and improving the light output power of the flip-chip Mini-LED.

[0055] As described in the background art, in the current flip-chip Mini-LED manufacturing process, the P pad 18 and the P electrode 17 are in contact with each other, and their adhesion is relatively high. The area below the P electrode 17, which is in contact with the P pad 18, is in direct contact with the transparent conductive layer 16. Due to the poor adhesion between the P electrode 17 and the transparent conductive layer 16, the adhesion stability between the P electrode 17 and the transparent conductive layer 16 is poor during the reflow soldering and packaging process of the flip-chip Mini-LED and the substrate. This results in poor stability of the overall structure of the P pad 18 and the P electrode 17, making it prone to chip failure due to deformation stress, especially under large pushing forces.

[0056] Based on this, the technical solution of this application performs patterning processing on the transparent conductive layer 16 below the electrode body portion of the P electrode 17 (i.e., patterning processing on the transparent conductive layer 16 at the current injection position of the P pad 18), forming a first groove that exposes part of the current blocking layer 15. With the electrode body portion at least filling the first groove, it is equivalent to reducing the contact area between the electrode body portion and the transparent conductive layer 16, so that the lower part of the electrode body portion mainly contacts the current blocking layer 15. Since the adhesion force between the electrode body and the current blocking layer 15 is greater than that between the electrode body and the transparent conductive layer 16, this structural design can improve the adhesion stability of the P electrode 17 during the reflow soldering packaging process of the flip-chip Mini-LED and the substrate. This results in higher stability of the overall structure of the P pad 18 and the P electrode 17, ensuring that the current received by the P pad 18 can be effectively transmitted to the P-type semiconductor layer 14. This reduces the chip failure problem caused by deformation stress during the reflow soldering packaging process of the flip-chip Mini-LED and the substrate, and can also appropriately increase the thrust value during the packaging process to improve the packaging effect.

[0057] Since the technical solution of this application only patterns the transparent conductive layer 16 below the electrode body of the P electrode 17, and the electrode finger portion of the P electrode 17 is still located on the side surface of the transparent conductive layer 16 facing away from the substrate 11, this design will not affect the current conduction at the P pad 18, that is, it will not have a negative impact on the photoelectric performance of the flip-chip Mini-LED.

[0058] In an optional embodiment of this utility model, reference is made to Figure 2 , Figure 2 This is a schematic diagram of another flip-chip Mini-LED provided by an embodiment of the present invention. In this embodiment, the first groove also extends through the current blocking layer 15, exposing a portion of the surface of the P-type semiconductor layer 14.

[0059] The electrode body portion is in contact with the exposed surface of the P-type semiconductor layer 14.

[0060] Specifically, in this embodiment of the invention, the transparent conductive layer 16 and the current blocking layer 15 below the electrode body of the P electrode 17 are simultaneously patterned (i.e., the transparent conductive layer 16 and the current blocking layer 15 at the current injection position of the P pad 18 are simultaneously patterned), forming a first groove that exposes part of the P-type semiconductor layer 14. With the electrode body at least filling the first groove, it is equivalent to reducing the contact area between the electrode body and the transparent conductive layer 16, so that the lower part of the electrode body mainly contacts the P-type semiconductor layer 14. Since the adhesion between the electrode body and the P-type semiconductor layer 14 is greater than that between the electrode body and the current blocking layer 15, and greater than that between the electrode body and the transparent conductive layer 16, this structural design can further improve the adhesion stability of the P electrode 17 during the reflow soldering packaging process of the flip-chip Mini-LED and the substrate. This results in higher stability of the overall structure of the P pad 18 and the P electrode 17, ensuring that the current received by the P pad 18 can be effectively transmitted to the P-type semiconductor layer 14. This reduces the chip failure problem caused by deformation stress during the reflow soldering packaging process of the flip-chip Mini-LED and the substrate, and can also further increase the push value during the packaging process, thereby improving the packaging effect.

[0061] Similarly, since the technical solution of this application only patterns the transparent conductive layer 16 and the current blocking layer 15 below the electrode body of the P electrode 17, and the electrode finger portion of the P electrode 17 is still located on the side surface of the transparent conductive layer 16 facing away from the substrate 11, this design will not affect the current conduction at the P pad 18, that is, it will not have a negative impact on the photoelectric performance of the flip-chip Mini-LED.

[0062] In an optional embodiment of this utility model, such as Figure 1 and Figure 2 As shown, the flip-chip Mini-LED further includes a DBR layer 19 located on the side of the transparent conductive layer 16 facing away from the substrate 11; wherein the DBR layer 19 has a second groove that exposes a portion of the electrode body portion, and the P pad 18 contacts the electrode body portion through the second groove.

[0063] The flip-chip Mini-LED further includes a third groove penetrating the multiple quantum well layer 13 and the P-type semiconductor layer 14, the third groove exposing a portion of the surface of the N-type semiconductor layer 12.

[0064] The flip-chip Mini-LED further includes: an N-electrode 20 and an N-pad 21; the N-electrode 20 is in contact with the exposed surface of the N-type semiconductor layer 12; the DBR layer 19 also has a fourth groove that exposes a portion of the N-electrode 20, and the N-pad 21 is in contact with the N-electrode 20 through the fourth groove.

[0065] Specifically, in this embodiment of the invention, the DBR layer 19 is an optical structure used to improve the light extraction efficiency of flip-chip Mini-LEDs. The DBR layer 19 can be formed by alternating stacks of multiple dielectric materials with different refractive indices to form a periodic structure. When light propagates in the DBR layer 19, due to the difference in refractive index between the different dielectric layers, the light will be reflected and interfered, thereby forming high reflectivity within a specific wavelength range, increasing the light reflectivity inside the flip-chip Mini-LED, reducing light loss inside the chip, and thus increasing the light extraction efficiency. By optimizing the structure and parameters of the DBR layer 19, characteristics such as high reflectivity, wide bandwidth, and angle insensitivity can be achieved, further improving the performance and reliability of flip-chip Mini-LEDs.

[0066] It should be noted that the technical solution of this application is also applicable to high-voltage flip-chip Mini-LEDs, see reference. Figure 3 , Figure 3 A schematic diagram of a high-voltage flip-chip Mini-LED provided for an embodiment of this utility model, with reference to... Figure 4 , Figure 4 A schematic diagram of another high-voltage flip-chip Mini-LED provided for an embodiment of this utility model. In this embodiment of the utility model, as... Figure 3 As shown, the transparent conductive layer 16 below the electrode body of P electrode 17 is patterned (i.e., the transparent conductive layer 16 at the current injection position of P pad 18 is patterned) to form a first groove that exposes part of the current blocking layer 15. With the electrode body at least filling the first groove, the contact area between the electrode body and the transparent conductive layer 16 is reduced, so that the electrode body mainly contacts the current blocking layer 15.

[0067] like Figure 4 As shown, the transparent conductive layer 16 and the current blocking layer 15 below the electrode body of the P electrode 17 are simultaneously patterned (i.e., the transparent conductive layer 16 and the current blocking layer 15 at the current injection position of the P pad 18 are simultaneously patterned), forming a first groove that exposes part of the P-type semiconductor layer 14. With the electrode body at least filling the first groove, it is equivalent to reducing the contact area between the electrode body and the transparent conductive layer 16, so that the lower part of the electrode body mainly contacts the P-type semiconductor layer 14.

[0068] Similarly, under this structural design, the adhesion stability of the P electrode 17 can be improved during the reflow soldering packaging process of the high-voltage flip-chip Mini-LED and the substrate, resulting in higher stability of the overall structure of the P pad 18 and the P electrode 17. This ensures that the current received by the P pad 18 can be effectively transmitted to the P-type semiconductor layer 14, reducing chip failure caused by deformation stress during the reflow soldering packaging process of the high-voltage flip-chip Mini-LED and the substrate. Furthermore, the push value during the packaging process can be appropriately increased to improve the packaging effect.

[0069] against Figure 3 Regarding the structure shown, the technical solution of this application only involves patterning the transparent conductive layer 16 below the electrode body portion of the P electrode 17 of the high-voltage flip-chip Mini-LED. Figure 4 In terms of the structure shown, the technical solution of this application only patterns the transparent conductive layer 16 and the current blocking layer 15 below the electrode body portion of the P electrode 17 of the high-voltage flip-chip Mini-LED. The electrode finger portion of the P electrode 17 is still located on the side surface of the transparent conductive layer 16 facing away from the substrate 11. Therefore, this design will not affect the current conduction at the P pad 18, that is, it will not have a negative impact on the photoelectric performance of the high-voltage flip-chip Mini-LED.

[0070] It should be noted that, Figure 3 and Figure 4 The reference numeral 22 indicates the connecting electrode between multiple unit cells, and the reference numeral 23 indicates the insulating layer.

[0071] In an optional embodiment of this utility model, reference is made to Figure 5 , Figure 5 This is a schematic diagram of one possible implementation of the first groove provided in an embodiment of the present invention. In this embodiment, the first groove includes a plurality of independent groove units 24.

[0072] Specifically, in this embodiment of the invention, a large first groove is designed as multiple independent smaller groove units 24. At this time, the area below the electrode body, except for the area where the groove unit 24 is located, is still in contact with the transparent conductive layer 16, thereby expanding the current below the electrode body and improving the device performance of the flip-chip Mini-LED.

[0073] Optionally, in this embodiment of the invention, based on considerations such as current spread and bonding area, the shape of some of the groove units 24 may differ from the shape of others, thereby improving the performance and structural stability of the flip-chip Mini-LED device. For example, some of the groove units 24 may be circular holes, while others may be square holes, etc.

[0074] In an optional embodiment of this utility model, reference is made to Figure 6 , Figure 6 This is a schematic diagram illustrating another possible implementation of the first groove provided in an embodiment of the present invention. In this embodiment, the region containing the plurality of independent groove units 24 includes an edge region and a central region; the size of the groove unit 24 located in the edge region is larger than the size of the groove unit 24 located in the central region.

[0075] Specifically, in this embodiment of the invention, the size of the groove unit 24 located in the edge region is designed to be larger, which can increase the contact area between the electrode body and the underlying film layer, thereby improving the adhesion of the electrode body in this edge region. The size of the groove unit 24 located in the middle region is designed to be smaller, which can retain more transparent conductive layer 16, effectively extending the current under the electrode body, thereby improving the performance of the flip-chip Mini-LED device.

[0076] In summary, the technical solution of this application adds a patterned design of a transparent conductive layer 16 to the area where the electrode body of the P electrode 17 corresponding to the P pad 18 is located, or adds a patterned design of a transparent conductive layer 16 and a current blocking layer 15. Without affecting the current conduction, the contact between the electrode body and the P-type semiconductor layer 14 is increased, thereby improving the pushing force and increasing the adhesion of the pad, and reducing the chip failure problem caused by deformation stress during the flip-chip Mini-LED and substrate reflow soldering packaging process.

[0077] Based on the above embodiments of this utility model, another embodiment of this utility model also provides a method for fabricating a flip-chip Mini-LED, see reference. Figure 7 , Figure 7 This is a schematic flowchart illustrating a method for fabricating a flip-chip Mini-LED according to an embodiment of the present invention. The method for fabricating a flip-chip Mini-LED according to an embodiment of the present invention includes:

[0078] S101: Provide a substrate 11.

[0079] S102: An N-type semiconductor layer 12, a multiple quantum well layer 13, and a P-type semiconductor layer 14 are sequentially grown on one side of the substrate 11.

[0080] S103: A current blocking layer 15 and a transparent conductive layer 16 are formed on the side of the P-type semiconductor layer 14 away from the substrate 11, wherein the current blocking layer 15 is located between the transparent conductive layer 16 and the P-type semiconductor layer 14.

[0081] S104: At least the transparent conductive layer 16 is processed to form a first groove that exposes a portion of the current blocking layer 15.

[0082] S105: Form a P electrode 17, the P electrode 17 including an electrode body portion and a plurality of electrode finger portions extending from the electrode body portion; the electrode body portion at least fills the first groove, and the electrode finger portions are located on the side surface of the transparent conductive layer 16 opposite to the substrate 11.

[0083] S106: Form P pad 18, which is in contact with the electrode body portion.

[0084] Specifically, in this embodiment of the present invention, based on step S104, the penetration depth of the first groove can be determined according to actual design requirements. One implementation is to pattern the transparent conductive layer 16 to form a first groove that exposes part of the current blocking layer 15; another implementation is to pattern the transparent conductive layer 16 and the current blocking layer 15 simultaneously to form a first groove that exposes part of the P-type semiconductor layer 14.

[0085] It should be noted that the method for fabricating flip-chip Mini-LEDs provided in this application only requires adding a patterning process for the corresponding film layer to the traditional process to form the designed structure, without increasing the difficulty of fabricating flip-chip Mini-LEDs.

[0086] Based on the above embodiments of the present invention, another embodiment of the present invention provides a light-emitting device, which includes the flip-chip Mini-LED or the high-voltage flip-chip Mini-LED described in the above embodiments.

[0087] For example, flip-chip Mini-LEDs can be applied to equipment in fields such as monitoring and command, high-end cinemas, medical diagnostics, advertising displays, conferences and exhibitions, office displays, and virtual reality. They can also be used in automotive smart cockpits, including in-vehicle displays and dashboards, providing clearer driving information displays and entertainment interaction experiences. Furthermore, they can be used in Mini-LED direct-view devices, such as display components for mobile phones and laptops, enhancing image quality through high-density pixels.

[0088] The foregoing has provided a detailed description of the flip-chip Mini-LED, its preparation method, and the light-emitting device provided by this utility model. Specific examples have been used to illustrate the principle and implementation of this utility model. The description of the above embodiments is only for the purpose of helping to understand the method and core idea of ​​this utility model. At the same time, for those skilled in the art, there will be changes in the specific implementation and application scope based on the idea of ​​this utility model. Therefore, the content of this specification should not be construed as a limitation of this utility model.

[0089] It should be noted that each embodiment in this specification focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other.

[0090] It should also be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that elements inherent to a process, method, article, or apparatus that comprises a list of elements, or elements inherent to such processes, methods, articles, or apparatus, are also included. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0091] The above description of the disclosed embodiments enables those skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A flip-chip Mini-LED, characterized in that, The flip-chip Mini-LED includes: Substrate; An N-type semiconductor layer, a multiple quantum well layer, and a P-type semiconductor layer are sequentially stacked on one side of the substrate; A current blocking layer and a transparent conductive layer are located on the side of the P-type semiconductor layer opposite to the substrate, the current blocking layer being located between the transparent conductive layer and the P-type semiconductor layer; the transparent conductive layer has a first groove exposing a portion of the current blocking layer; The P electrode includes an electrode body portion and a plurality of electrode finger portions extending from the electrode body portion; the electrode body portion at least fills the first groove, and the electrode finger portions are located on the surface of the transparent conductive layer opposite to the substrate; The P pad is in contact with the electrode body portion.

2. The flip-chip Mini-LED according to claim 1, characterized in that, The first groove also extends through the current blocking layer, exposing a portion of the surface of the P-type semiconductor layer; The electrode body portion is in contact with the exposed surface of the P-type semiconductor layer.

3. The flip-chip Mini-LED according to claim 1 or 2, characterized in that, The first groove comprises multiple independent groove units.

4. The flip-chip Mini-LED according to claim 3, characterized in that, The shape of one part of the groove unit is different from the shape of the other part of the groove unit.

5. The flip-chip Mini-LED according to claim 3, characterized in that, The region where the multiple independent groove units are located includes an edge region and a middle region; the size of the groove unit located in the edge region is larger than the size of the groove unit located in the middle region.

6. The flip-chip Mini-LED according to claim 1, characterized in that, The flip-chip Mini-LED also includes: A DBR layer is located on the side of the transparent conductive layer opposite to the substrate; wherein the DBR layer has a second groove that exposes a portion of the electrode body portion, and the P pad contacts the electrode body portion through the second groove.

7. The flip-chip Mini-LED according to claim 6, characterized in that, The flip-chip Mini-LED also includes: A third groove extends through the multiple quantum well layer and the P-type semiconductor layer, the third groove exposing a portion of the surface of the N-type semiconductor layer; The flip-chip Mini-LED also includes: an N electrode and an N pad; The N-electrode is in contact with the exposed surface of the N-type semiconductor layer; The DBR layer also has a fourth groove that exposes a portion of the N electrode, through which the N pad contacts the N electrode.

8. A light-emitting device, characterized in that, The light-emitting device includes the flip-chip Mini-LED as described in any one of claims 1-7.

Images