Perovskite tandem solar cells

Abstract

This application provides a perovskite tandem solar cell, comprising: a bottom cell including a first transparent conductive layer and a first electrode, the first transparent conductive layer being located on one side of the first electrode and in contact with the first electrode, the first transparent conductive layer having a first surface; and a perovskite top cell located on the first surface. This allows the first electrode on the back of the tandem solar cell, situated on the bottom cell, to contact the perovskite top cell through the first transparent conductive layer. Essentially, the first electrode can directly transmit electrical parameter information from the perovskite top cell to the back electrode without passing through the bottom cell. When measuring the parameters of the perovskite top cell, IV testing can be performed directly using a fixture, solving the problem in the prior art where it is difficult to test the top cell separately in tandem solar cell structures.

Description

Technical Field

[0001] This application relates to the field of solar cell technology, and more specifically, to a perovskite tandem solar cell. Background Technology

[0002] The efficiency parameters of perovskite-crystalline silicon tandem solar cells include open-circuit voltage, short-circuit current density, and fill factor. The open-circuit voltage of the tandem cell is equal to the sum of the open-circuit voltages of the crystalline silicon bottom cell and the perovskite top cell. However, conventional IV testing can only obtain the open-circuit voltage of the tandem solar cell, and cannot separately measure the open-circuit voltages of the crystalline silicon bottom cell and the perovskite top cell. This poses an obstacle to the development and design of tandem cells and the optimization of the perovskite top cell. Therefore, there is an urgent need to develop a novel tandem cell structure that can perfectly match the existing crystalline silicon textured surface and can independently decouple the open-circuit voltage parameter of the perovskite top cell.

[0003] The information disclosed above in the background section is only intended to enhance the understanding of the background art of the art described herein. Therefore, the background art may contain certain information that does not constitute prior art known to those skilled in the art in this country. Utility Model Content

[0004] The main objective of this application is to provide a perovskite tandem solar cell to solve the problem that it is difficult to test the top cell separately in the existing tandem solar cell structure.

[0005] To achieve the above objectives, according to one aspect of this application, a perovskite tandem solar cell is provided, comprising: a bottom cell including a first transparent conductive layer and a first electrode, the first transparent conductive layer being located on one side of the first electrode and in contact with the first electrode, the first transparent conductive layer having a first surface; and a perovskite top cell located on the first surface.

[0006] Optionally, the contact surface between the perovskite top solar cell and the first surface is a second surface, the width of the second surface in the first direction is smaller than the width of the first surface in the first direction, and the first direction is perpendicular to the thickness direction of the perovskite stacked solar cell.

[0007] Optionally, the bottom cell includes: a silicon substrate having a textured surface; a first insulating layer located on the side of the silicon substrate close to the perovskite top cell, a first transparent conductive layer located on the side of the first insulating layer away from the silicon substrate, the first transparent conductive layer also contacting the perovskite layer of the perovskite top cell; and a second insulating layer located on the side of the silicon substrate away from the perovskite top cell.

[0008] Optionally, the first transparent conductive layer has a third surface in a first direction, the first electrode is in contact with the third surface, and the first direction is perpendicular to the thickness direction of the perovskite tandem solar cell.

[0009] Optionally, the first transparent conductive layer has at least one fourth surface on the side opposite to the silicon substrate, and the first electrode is in contact with the fourth surface.

[0010] Optionally, the bottom battery further includes an interface modification layer that covers a portion of the first transparent conductive layer.

[0011] Optionally, the thickness of the first transparent conductive layer is 100nm~300nm.

[0012] Optionally, the thickness of the first insulating layer and the second insulating layer is 15nm~100nm.

[0013] Optionally, the thickness of the first electrode on the side opposite to the first surface of the bottom battery is 5 μm to 20 μm.

[0014] Optionally, the thickness of the interface modification layer is 1 nm to 2 nm.

[0015] By applying the technical solution of this application, a first transparent conductive layer and a first electrode are disposed in the bottom cell of a perovskite tandem solar cell. The first transparent conductive layer is located on one side of the first electrode and is in contact with the first electrode. The first transparent conductive layer has a first surface. The perovskite top cell is disposed on the first surface. This allows the first electrode on the bottom cell of the back side of the tandem solar cell to contact the perovskite top cell through the first transparent conductive layer. This is equivalent to the first electrode transmitting electrical parameter information from the perovskite top cell directly to the back electrode without passing through the bottom cell. When measuring the parameters of the perovskite top cell, IV testing can be performed directly using a clamp. The clamp is a flip-top type. The perovskite tandem solar cell is placed in the clamp, and the clamp is closed. The probe of the upper cover of the clamp contacts the electrode of the perovskite top cell, and the lower cover contacts the first electrode. This allows the perovskite top cell to be tested directly, bypassing the bottom cell, thereby solving the problem that it is difficult to test the top cell separately in the existing tandem solar cell structure. Attached Figure Description

[0016] The accompanying drawings, which form part of this application, are used to provide a further understanding of this application. The illustrative embodiments and descriptions of this application are used to explain this application and do not constitute an undue limitation of this application. In the drawings:

[0017] Figure 1 A cross-sectional structural schematic diagram of a first perovskite tandem solar cell according to an embodiment of this application is shown;

[0018] Figure 2 A cross-sectional structural schematic diagram of a second perovskite tandem solar cell according to an embodiment of this application is shown;

[0019] Figure 3 A cross-sectional structural schematic diagram of a third type of perovskite tandem solar cell according to an embodiment of this application is shown;

[0020] Figure 4 A cross-sectional structural schematic diagram of a perovskite top solar cell according to an embodiment of this application is shown.

[0021] The above figures include the following reference numerals:

[0022] 10. Bottom cell; 11. First transparent conductive layer; 12. First electrode; 13. Silicon substrate; 14. First insulating layer; 15. Second insulating layer; 16. Interface modification layer; 20. Perovskite top cell; 21. Perovskite layer; 22. Hole transport layer; 23. Electron transport layer; 24. Second transparent conductive layer; 25. Reflective layer; 26. Second electrode. Detailed Implementation

[0023] It should be noted that the following detailed descriptions are illustrative and intended to provide further explanation of this application. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains.

[0024] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0025] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this utility model are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate for the embodiments of the utility model described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0026] It should be understood that when an element (such as a layer, film, region, or substrate) is described as being "on" another element, the element may be directly on the other element, or there may be an intermediate element present. Furthermore, in the specification and claims, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element, or "connected" to the other element via a third element.

[0027] As described in the background section, in the prior art, the IV test of perovskite-crystalline silicon tandem solar cells can only obtain the open-circuit voltage of the tandem solar cells, but cannot separately measure the open-circuit voltage of the crystalline silicon bottom cell and the perovskite top cell. This has brought obstacles to the development and design of tandem solar cells and the optimization of perovskite top cells. In order to solve the problem that it is difficult to test the top cell separately in the tandem solar cell structure, the embodiments of this application provide a perovskite tandem solar cell.

[0028] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention.

[0029] According to one aspect of the embodiments of this application, a perovskite tandem solar cell is provided, such as... Figures 1 to 3 As shown, it includes: a bottom cell 10, including a first transparent conductive layer 11 and a first electrode 12, wherein the first transparent conductive layer 11 is located on one side of the first electrode 12 and is in contact with the first electrode 12, and the first transparent conductive layer 11 has a first surface; and a perovskite top cell 20, located on the first surface.

[0030] By setting a first transparent conductive layer and a first electrode in the bottom cell of a perovskite tandem solar cell, the first transparent conductive layer is located on one side of the first electrode and is in contact with the first electrode, and the first transparent conductive layer has a first surface; and the perovskite top cell is set on the first surface. This allows the first electrode on the back of the tandem solar cell, located on the bottom cell, to contact the perovskite top cell through the first transparent conductive layer. Essentially, the first electrode can transmit electrical parameter information from the perovskite top cell directly to the back electrode without passing through the bottom cell. When measuring the parameters of the perovskite top cell, IV testing can be performed directly using a flip-top fixture. The perovskite tandem solar cell is placed in the fixture, the fixture is closed, and the probe on the upper cover of the fixture contacts the electrode of the perovskite top cell, while the lower cover contacts the first electrode. This allows for direct testing of the perovskite top cell, bypassing the bottom cell, thus solving the problem in existing tandem solar cell structures where it is difficult to test the top cell separately.

[0031] Specifically, the bottom cell can be a crystalline silicon cell, and the first transparent conductive layer can be made of ITO, IZO, FTO, etc. Its function is to improve conductivity between the perovskite top cell and the bottom cell, and it also forms a conductive path with the first electrode. This is crucial for enabling independent testing of the perovskite top cell within the tandem solar cell. This structural design allows the bottom crystalline silicon cell and the top perovskite cell to operate independently, thus decoupling their performance. This facilitates individual optimization of each cell, allowing the open-circuit voltage of the perovskite top cell in the tandem solar cell to be tested independently, unaffected by the crystalline silicon bottom cell. This is because the open-circuit voltage of a traditional tandem solar cell is the sum of the crystalline silicon bottom cell and the perovskite top cell, making it impossible to test independently. This technical advantage is achieved through an independent conductive path, ensuring the testing independence of the perovskite top cell and allowing for accurate testing of its open-circuit voltage, thus providing the possibility of optimizing the overall performance of the tandem solar cell.

[0032] Specifically, the perovskite top solar cell is deposited directly on the first surface of the first transparent conductive layer, such as... Figure 4 As shown, the perovskite top solar cell, from bottom to top, includes: a perovskite layer 21, a hole transport layer 22, an electron transport layer 23, a second transparent conductive layer 24, a reflective layer 25, and a second electrode 26. This design allows the perovskite top solar cell to exist independently of the bottom solar cell, enabling independent testing of its open-circuit voltage and facilitating optimization. The key advantage is that the open-circuit voltage of the perovskite top solar cell can be tested independently, improving upon traditional tandem solar cell structures by decoupling the performance of the two cells for separate optimization. This is achieved because the perovskite top solar cell and the crystalline silicon bottom solar cell are isolated by an insulating layer, and their electrode structure design allows for independent testing. This enables accurate measurement of the open-circuit voltage of the perovskite top solar cell, providing possibilities for the independent performance research and optimization of perovskite solar cells.

[0033] The perovskite layer described above can be made of a typical perovskite material with an ABX3 structure, where the A-site is usually methylamine (MA). + ), formamidin (FA) + ) or cesium (Cs) + Organic or inorganic cations such as lead (Pb) at the B site; 2+ ) or tin (Sn 2+ Metal ions such as ); the X-position is chlorine (Cl). - ), bromine (Br - ) or iodine (I - Halogen anions such as α, β, and γ are present. The perovskite layer is the core component of the battery, responsible for absorbing solar energy and converting it into electron-hole pairs. This material has the characteristics of high light absorption coefficient, long exciton diffusion length, and high carrier mobility, making it an ideal choice for high-performance photovoltaic devices.

[0034] The hole transport layer can be made of Spiro-MeOTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)-N-(2-ethoxycarbo-1-methylethyl)-amino]-9,9'-spirodifluorene), or PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate)), etc. The main function of the hole transport layer is to extract holes from the perovskite layer and transport them to the second transparent conductive layer, thereby promoting charge separation and transport. Simultaneously, it also protects the perovskite layer from oxidative damage.

[0035] The electron transport layer 23 can be made of materials such as C60 (fullerene), SnO2 (tin dioxide), or TiO2 (titanium dioxide). The electron transport layer is responsible for extracting electrons from the perovskite layer and transporting them to the second transparent conductive layer, also promoting charge separation and transport. C60 and SnO2 possess excellent electronic conductivity and stability.

[0036] The material of the aforementioned second transparent conductive layer can be IZO (indium zinc oxide), ITO (indium tin oxide), FTO (tin oxide), AZO (aluminum-doped zinc oxide), etc. The second transparent conductive layer serves as a medium for collecting and transporting electrons, while also allowing light to pass through to the perovskite layer. IZO and ITO possess high transparency and good conductivity.

[0037] The reflective layer can be made of MgF2 (magnesium fluoride). The reflective layer reduces light reflection loss and increases the light absorption rate of the perovskite layer, thereby increasing the photoelectric conversion efficiency of the battery. MgF2 has excellent optical properties and can effectively reflect incoming light. The second electrode can be made of Ag (silver) or other metals with good electrical conductivity.

[0038] In some alternative implementations, such as Figures 1 to 3 As shown, the contact surface between the perovskite top cell 20 and the first surface is the second surface. The width of the second surface in the first direction X is smaller than the width of the first surface in the first direction X. The first direction X is perpendicular to the thickness direction of the perovskite tandem cell. This allows for a larger space to be reserved for the first electrode 12 on the upper surface of the bottom cell 10, enabling the first electrode to be better electrically connected to the perovskite top cell 20 through the first transparent conductive layer 11.

[0039] In some alternative implementations, such as Figures 1 to 3As shown, the aforementioned bottom cell 10 includes: a silicon substrate 13 with a textured surface; a first insulating layer 14 located on the side of the silicon substrate 13 near the perovskite top cell 20; a first transparent conductive layer 11 located on the side of the first insulating layer 14 away from the silicon substrate 13; the first transparent conductive layer 11 also contacts the perovskite layer 21 of the perovskite top cell 20; and a second insulating layer 15 located on the side of the silicon substrate 13 away from the perovskite top cell 20. The textured surface of the silicon substrate 13 enhances its ability to capture light and separate photogenerated carriers. This textured structure optimizes light absorption, while the insulating layer prevents direct electrical contact between the perovskite layer 21 and the silicon substrate 13, reducing charge recombination and increasing the open-circuit voltage and short-circuit current density of the cell, thereby improving overall efficiency. The thickness of the silicon substrate 13 can be 15-100 nm.

[0040] The materials of the first and second insulating layers can be Al2O3 (alumina), SiO2 (silicon dioxide), or a multilayer insulating structure composed of SiNx (silicon nitride) and Al2O3. These materials possess excellent dielectric properties and chemical stability. The first insulating layer is located between the textured monocrystalline silicon wafer and the first transparent conductive layer. Its main function is to isolate the charge transport path between the textured silicon wafer and the perovskite top cell, preventing direct contact that could lead to unnecessary charge recombination or short circuits. It also protects the textured silicon wafer from damage during perovskite cell fabrication. The second insulating layer is mainly located on the back side of the textured monocrystalline silicon wafer. Its function is to protect the silicon substrate and bottom electrode, while also preventing the influence of environmental factors such as moisture and oxygen, thus improving the environmental stability of the cell. Furthermore, it also acts as a charge barrier, helping to control the direction of charge transport and thereby optimizing the cell's electrical performance.

[0041] The combined effect of the first and second insulating layers is to form a barrier that not only protects the textured silicon wafer and electrodes but also ensures that the charge transport process between the perovskite top cell and the crystalline silicon bottom cell is controlled, reducing charge recombination within the cell and improving the fill factor and overall efficiency. The presence of these insulating layers also allows for independent optimization of the perovskite top cell and the crystalline silicon bottom cell, facilitating the research and improvement of perovskite cell performance.

[0042] In some alternative implementations, such as Figure 2As shown, the first transparent conductive layer 11 has a third surface in the first direction X, and the first electrode 12 is in contact with the third surface. The first direction X is perpendicular to the thickness direction of the perovskite tandem solar cell. The first electrode 12 can contact the side surface of the first transparent conductive layer 11, thus ensuring effective charge collection of the perovskite top cell 20. The electrical parameters of the perovskite top cell 20 can be detected directly from the back of the tandem solar cell, bypassing the bottom cell 10.

[0043] In some alternative implementations, such as Figure 1 and Figure 3 As shown, the first transparent conductive layer 11 has at least one fourth surface on the side opposite to the silicon substrate 13, and the first electrode 12 is in contact with the fourth surface. Figure 1 As shown, in the first direction X, a first electrode 12 is provided on one side of the bottom battery 10, and part of the first electrode 12 is in contact with the upper surface (fourth surface) of the first insulating layer 14, increasing the contact area. This part is also located on the front side, which not only ensures sufficient contact surface between the first electrode 12 and the first transparent conductive layer 11, but also prevents it from easily detaching from the front side, thus improving the stability of the stacked battery. Figure 3 As shown, in the first direction X, the bottom battery 10 can be provided with first electrodes 12 on both sides, and the first electrodes 12 on both sides are in contact with the upper surface (fourth surface) of the first insulating layer 14, which increases the contact area. Moreover, this part is located on the front side, which not only ensures that the first electrode 12 has sufficient contact surface with the first transparent conductive layer 11, but also makes it less likely to fall off on the front side, thus improving the stability of the stacked battery.

[0044] In some alternative implementations, such as Figures 1 to 3As shown, the aforementioned bottom battery 10 also includes an interface modification layer 16, which covers a portion of the aforementioned first transparent conductive layer 11. The interface modification layer 16 can be a SAM layer (Self-Assembled Monolayer), typically using specific organic molecules such as organic alkyl thiols, phosphonates, or phosphites. These molecules can form a monomolecular-thick, ordered self-assembled film on the surface of the first transparent conductive layer 11. The main functions of the SAM layer include: work function adjustment, interface optimization, and defect passivation. Specifically, work function adjustment: the SAM layer can change the work function of the first transparent conductive layer 11, making it more compatible with the work function of the perovskite layer 21, reducing the energy barrier, and promoting charge injection and transport. Interface optimization: the SAM layer improves the hydrophilicity or hydrophobicity of the surface of the first transparent conductive layer 11, optimizing the growth of the perovskite layer 21 on the first transparent conductive layer 11, resulting in better interfacial contact between the perovskite layer 21 and the first transparent conductive layer 11, and improving charge extraction efficiency. Defect passivation: SAM molecules can fill defects on the surface of the first transparent conductive layer 11, reducing non-radiative recombination and thus improving the open-circuit voltage and stability of the battery. Refractive index matching: The SAM layer can also optimize optical performance by matching the refractive indices of different material layers, reducing light reflection loss and increasing light absorption. In addition to the above effects, it also provides mechanical protection, offering a degree of mechanical protection to prevent damage to the perovskite layer during preparation or use due to the rough surface of the TCO layer. It also maintains electrochemical stability: The introduction of the SAM layer enhances the electrochemical stability of the perovskite layer 21 on the first transparent conductive layer 11, reducing the degradation of the perovskite material under air, moisture, or light conditions.

[0045] In some optional embodiments, the thickness of the first transparent conductive layer is 100 nm to 300 nm. Setting the thickness of the first transparent conductive layer between 100 and 300 nm balances conductivity and transmittance. An appropriate thickness of the first transparent conductive layer ensures sufficient conductivity without sacrificing excessive transmittance, thereby improving the photoelectric conversion efficiency of the battery.

[0046] In some alternative embodiments, the thicknesses of the first and second insulating layers are 15 nm to 100 nm. Designing the thicknesses of the first and second insulating layers within the 15-100 nm range ensures good electrical isolation performance. The appropriate thicknesses of the first and second insulating layers effectively isolate the perovskite layer from the silicon substrate, reducing charge recombination at the interface and improving battery efficiency.

[0047] In some alternative embodiments, the thickness of the first electrode on the side opposite the first surface of the bottom battery is 5 μm to 20 μm. Setting the thickness of the first electrode on the back side within this range enhances its conductivity. A sufficiently thick Ag electrode provides good conductivity while ensuring sufficient mechanical strength to prevent electrode breakage during fabrication and use, thus improving the battery's reliability and lifespan.

[0048] In some optional embodiments, the thickness of the interface modification layer is 1 nm to 2 nm. Controlling the thickness of the interface modification layer to 1-2 nm can optimize interface characteristics. A thin and uniform SAM layer can improve the interfacial bonding between the first transparent conductive layer and the perovskite layer, reduce interfacial recombination, and improve the stability and efficiency of the battery.

[0049] In this invention, the first electrode fabrication process can be as follows: Ag metal is deposited on the back side of a single-crystal silicon wafer using vacuum evaporation technology, with a thickness of up to 10 μm. A mask is used to ensure that the Ag electrode does not contact the front side of the silicon wafer, thus avoiding short circuits.

[0050] The fabrication process for the second electrode involves printing conductive Ag paste on a designated area on the front side of the perovskite top cell, enabling it to connect the Ag electrode to the second transparent conductive layer. The thickness of this paste can be 10 μm. The Ag paste is then cured through a sintering process to form a good conductive contact.

[0051] The fabrication processes for the first and second insulating layers can utilize atomic layer deposition (ALD) technology to deposit Al2O3 on the silicon wafer surface to a thickness of 50 nm, ensuring excellent electrical insulation. The precise control capabilities of ALD guarantee the uniformity and accurate thickness of the insulating layers.

[0052] The fabrication process for textured silicon substrates can employ conventional silicon wafer processing techniques, such as wet chemical etching, to create a textured structure and enhance light absorption. After textured processing, the silicon wafer needs to be cleaned and dried to prevent impurities from affecting the fabrication of subsequent layers.

[0053] The first transparent conductive layer can be fabricated using magnetron sputtering to deposit IZO material to a thickness of 200 nm. During the deposition process, process parameters such as temperature, gas pressure, and sputtering power are controlled to obtain a TCO layer with high conductivity and good transparency.

[0054] The SAM layer can be prepared by immersing a first transparent conductive layer in a solution containing SAM molecules, such as butyl mercaptan or phenylphosphonate. A monomolecular-thick SAM layer, with a thickness of 1-2 nm, is then formed on the surface of the first transparent conductive layer through a self-assembly process.

[0055] The perovskite layer can be prepared by spin-coating or solution immersion to deposit a perovskite precursor solution. Annealing at a specific temperature allows the perovskite to form a high-quality thin film with a thickness of up to 300 nm.

[0056] The electron transport layer can be fabricated by depositing C60 using a vacuum thermal evaporation method, with a thickness of 20 nm. The C60 layer, acting as the electron transport layer, is in close contact with the perovskite layer, promoting rapid electron transport. Alternatively, a sol-gel technique can be used, where a SnO2 solution is spin-coated onto the perovskite layer, followed by annealing at a suitable temperature to form an electron transport layer with a thickness of 30 nm.

[0057] The second transparent conductive layer can be fabricated by depositing IZO on the SnO2 layer using magnetron sputtering or pulsed laser deposition techniques, with a thickness of up to 200 nm. Optimizing sputtering conditions ensures that the IZO layer exhibits good conductivity and transparency.

[0058] The reflective layer can be fabricated using electron beam evaporation or plasma-enhanced chemical vapor deposition (PECVD) to deposit MgF2, with a thickness of up to 100 nm. The MgF2 layer reduces reflection and increases light transmittance, thus helping to improve the light absorption efficiency of the battery.

[0059] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0060] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A perovskite tandem solar cell, characterized in that, include: The bottom battery includes a first transparent conductive layer and a first electrode. The first transparent conductive layer is located on one side of the first electrode and is in contact with the first electrode. The first transparent conductive layer has a first surface. A perovskite top cell is located on the first surface.

2. The perovskite tandem solar cell according to claim 1, characterized in that, The contact surface between the perovskite top solar cell and the first surface is the second surface. The width of the second surface in the first direction is smaller than the width of the first surface in the first direction. The first direction is perpendicular to the thickness direction of the perovskite stacked solar cell.

3. The perovskite tandem solar cell according to claim 1, characterized in that, The bottom battery includes: Silicon substrate with a textured surface; A first insulating layer is located on the side of the silicon substrate close to the perovskite top cell, and a first transparent conductive layer is located on the side of the first insulating layer away from the silicon substrate. The first transparent conductive layer is also in contact with the perovskite layer of the perovskite top cell. The second insulating layer is located on the side of the silicon substrate opposite to the perovskite top cell.

4. The perovskite tandem solar cell according to claim 1, characterized in that, The first transparent conductive layer has a third surface in a first direction, the first electrode is in contact with the third surface, and the first direction is perpendicular to the thickness direction of the perovskite tandem solar cell.

5. The perovskite tandem solar cell according to claim 3, characterized in that, The first transparent conductive layer has at least one fourth surface on the side opposite to the silicon substrate, and the first electrode is in contact with the fourth surface.

6. The perovskite tandem solar cell according to claim 1, characterized in that, The bottom battery also includes an interface modification layer that covers a portion of the first transparent conductive layer.

7. The perovskite tandem solar cell according to claim 1, characterized in that, The thickness of the first transparent conductive layer is 100nm~300nm.

8. The perovskite tandem solar cell according to claim 3, characterized in that, The thickness of the first insulating layer and the second insulating layer is 15nm~100nm.

9. The perovskite tandem solar cell according to claim 1, characterized in that, The thickness of the first electrode on the side opposite to the first surface of the bottom battery is 5 μm to 20 μm.

10. The perovskite tandem solar cell according to claim 6, characterized in that, The thickness of the interface modification layer is 1nm~2nm.

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