Light-emitting substrate, light-emitting device

Abstract

Embodiments of the present disclosure provide a light-emitting substrate and a light-emitting device, and relate to the technical field of display. The light-emitting substrate comprises a substrate, a plurality of light-emitting devices and an encapsulation layer. The plurality of light-emitting devices are arranged on the substrate. The encapsulation layer is arranged on a side of the plurality of light-emitting devices away from the substrate. The light-emitting device comprises a cathode, an anode, a light-emitting layer, a first functional layer and an auxiliary functional layer. The cathode and the anode are arranged oppositely. The light-emitting layer is located between the cathode and the anode. The first functional layer is located between the light-emitting layer and the cathode. The auxiliary functional layer is located on a side of the light-emitting layer away from the anode. The light-emitting substrate is used for displaying an image.

Description

[0001] This application claims priority to Chinese patent application No. 202410869737.0, filed on June 28, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This disclosure relates to the field of display technology, and in particular to a light-emitting substrate and a light-emitting device. Background Technology

[0003] Quantum dots (QDs), as novel light-emitting materials, possess advantages such as high light purity, high quantum efficiency, tunable color emission, and long lifespan, making them a research hotspot for novel light-emitting diodes (LEDs). Therefore, quantum dot light-emitting diodes (QLEDs) using quantum dot materials as the light-emitting layer have become a major research direction for novel display devices.

[0004] In some implementations, the QLED light-emitting substrate exhibits positive aging under the action of acidic encapsulant (such as acrylic encapsulant), which improves the performance of the QLED light-emitting device. However, due to the effects of positive aging, the QLED light-emitting device suffers from poor stability. Summary of the Invention

[0005] The purpose of this disclosure is to provide a light-emitting substrate and a light-emitting device to solve the problem of poor stability of QLED light-emitting devices under positive aging.

[0006] To achieve the above objectives, the embodiments of this disclosure provide the following technical solutions:

[0007] On one hand, a light-emitting substrate is provided. The light-emitting substrate includes: a substrate, a plurality of light-emitting devices, and an encapsulation layer. The plurality of light-emitting devices are disposed on the substrate. The encapsulation layer is disposed on the side of the plurality of light-emitting devices away from the substrate. Each light-emitting device includes: a cathode, an anode, a light-emitting layer, a first functional layer, and an auxiliary functional layer. The cathode and anode are disposed opposite to each other. The light-emitting layer is located between the cathode and the anode. The first functional layer is located between the light-emitting layer and the cathode. The auxiliary functional layer is located on the side of the light-emitting layer away from the anode.

[0008] Understandably, through the above setup, firstly, hydrogen can be transported from the auxiliary functional layer to the first functional layer, playing a positive aging role. This allows hydrogen to occupy the active sites (e.g., oxygen vacancy defects) on the surface of the first functional layer, thereby improving the performance of the light-emitting device. Secondly, when the active sites on the surface of the first functional layer are occupied by hydrogen, the influence of other atmospheres on the light-emitting device can be reduced, thus improving the controllability of the positive aging process and enhancing the stability of the light-emitting device. Thirdly, when the light-emitting device includes an auxiliary functional layer, the acidic encapsulating adhesive process involved in some implementations can be omitted, thus avoiding the influence of the acidic atmosphere on the morphology of the light-emitting device. Fourthly, the hydrogen transported to the first functional layer can act as a shallow donor in the first functional layer, increasing the carrier concentration and improving the conductivity of the first functional layer.

[0009] In some embodiments, the auxiliary functional layer includes a first auxiliary functional layer. The material of the first auxiliary functional layer includes an insulating material containing hydrogen.

[0010] In some embodiments, the first auxiliary functional layer is disposed on the side of the cathode away from the first functional layer.

[0011] In some embodiments, the light-emitting device further includes an auxiliary cathode. The auxiliary cathode is located on the side of the first auxiliary functional layer away from the cathode and is electrically connected to the cathode.

[0012] In some embodiments, the first auxiliary functional layer includes a plurality of spaced-apart vias. The auxiliary cathode is electrically connected to the cathode through the plurality of vias.

[0013] In some embodiments, the dimension of the auxiliary cathode along a first direction is greater than or equal to the dimension of the cathode along the first direction. The first direction is the thickness direction of the substrate.

[0014] In some embodiments, the size of the cathode along the first direction ranges from 10 nm to 50 nm. The size of the auxiliary cathode along the first direction ranges from 10 nm to 100 nm. The first direction is the thickness direction of the substrate.

[0015] In some embodiments, the light-emitting substrate further includes a pixel defining layer. The pixel defining layer is disposed on the substrate and includes a plurality of pixel openings. A plurality of light-emitting devices are correspondingly disposed within the plurality of pixel openings. The cathode is closer to the substrate than the anode. The first auxiliary functional layers of the plurality of light-emitting devices are connected to form a common functional layer, which is disposed between the pixel defining layer and the substrate.

[0016] In some embodiments, the material of the first auxiliary functional layer includes one or any combination of silicon nitride, silicon oxynitride, and silicon oxide. Alternatively, the material of the first auxiliary functional layer includes an insulating polymer material and a protonated acid. Alternatively, the material of the first auxiliary functional layer includes a protonated organic molecular cage.

[0017] In some embodiments, when the material of the first auxiliary functional layer includes one or any combination of silicon nitride, silicon oxynitride, and silicon oxide, the atomic percentage of hydrogen in the first auxiliary functional layer ranges from greater than 0% to less than or equal to 30%. When the material of the first auxiliary functional layer includes an insulating polymer and a protic acid, the molar ratio of the protic acid to the insulating polymer ranges from 2.5:10 to 3.5:10.

[0018] In some embodiments, the atomic percentage of hydrogen in the first functional layer ranges from 1% to 30%.

[0019] In some embodiments, the size of the first auxiliary functional layer along a first direction ranges from 550 nm to 1100 nm. The first direction is the thickness direction of the substrate.

[0020] In some embodiments, the ratio of the dimension of the first auxiliary functional layer along the first direction to the dimension of the cathode along the first direction ranges from 5 to 110. The first direction is the thickness direction of the substrate.

[0021] In some embodiments, the transmittance of the first auxiliary functional layer is greater than or equal to 80%.

[0022] In some embodiments, the auxiliary functional layer includes a second auxiliary functional layer. The second auxiliary functional layer is disposed between the cathode and the light-emitting layer. The material of the second auxiliary functional layer includes a nanocatalyst material. The nanocatalyst material is configured to dissociate hydrogen in a hydrogen atmosphere under preset conditions.

[0023] In some embodiments, the nanocatalyst material includes one or any combination of metals, metal oxides and metal complexes.

[0024] In some embodiments, the size of the second auxiliary functional layer along the first direction ranges from 30 nm to 80 nm. The first direction is the thickness direction of the substrate.

[0025] In some embodiments, the encapsulation layer is made of neutral organic materials and / or alkaline organic materials.

[0026] In some embodiments, the auxiliary functional layer includes: a first auxiliary functional layer and / or, a second auxiliary functional layer. The first auxiliary functional layer is disposed on the side of the cathode away from the first functional layer. The material of the first auxiliary functional layer includes an insulating material. The insulating material contains hydrogen. The second auxiliary functional layer is disposed between the cathode and the light-emitting layer. The material of the second auxiliary functional layer includes a nanocatalyst material, which is configured to dissociate hydrogen in a hydrogen atmosphere under preset conditions.

[0027] In another aspect, a light-emitting device is provided. The light-emitting device includes a driver chip and a light-emitting substrate as described in any of the above embodiments. The driver chip is used to drive the light-emitting substrate to emit light.

[0028] The beneficial effects that the above-mentioned light-emitting device can achieve are the same as those that the above-mentioned light-emitting substrate can achieve, and will not be repeated here. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in this disclosure, the accompanying drawings used in some embodiments of this disclosure will be briefly described below. Obviously, the drawings described below are only drawings of some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams and are not intended to limit the actual size of the product, the actual flow of the method, the actual timing of the signals, etc. involved in the embodiments of this disclosure.

[0030] Figure 1 This is a structural diagram of a light-emitting device according to some embodiments;

[0031] Figure 2 This is a structural diagram of a light-emitting substrate according to some embodiments;

[0032] Figure 3 This is a structural diagram of a light-emitting substrate according to some other embodiments;

[0033] Figure 4 This is a structural diagram of a light-emitting device according to some embodiments;

[0034] Figure 5A This is a structural diagram of a light-emitting substrate according to some other embodiments;

[0035] Figure 5B This is a structural diagram of a light-emitting substrate according to some other embodiments;

[0036] Figure 6 This is a structural diagram of a light-emitting device according to some other embodiments;

[0037] Figure 7 This is a structural diagram of a light-emitting device according to some other embodiments;

[0038] Figure 8 This is a structural diagram of a light-emitting substrate according to some other embodiments;

[0039] Figure 9 This is a graph showing the change of current density with voltage according to some embodiments;

[0040] Figure 10 A graph showing the change of current density with voltage according to some other embodiments;

[0041] Figure 11 This is a structural diagram of a light-emitting device according to some other embodiments;

[0042] Figure 12 This is a structural diagram of a light-emitting device according to some other embodiments;

[0043] Figure 13 This is a schematic diagram of hydrogen diffusion in the auxiliary functional layer of a light-emitting device according to some embodiments;

[0044] Figure 14 This is a structural diagram of a light-emitting device according to some other embodiments;

[0045] Figure 15 This is a structural diagram of a light-emitting device according to some other embodiments;

[0046] Figure 16 This is a structural diagram of a light-emitting device according to some other embodiments;

[0047] Figure 17 This is a structural diagram of a light-emitting device according to some other embodiments;

[0048] Figure 18 This is a flowchart illustrating the fabrication process of a light-emitting substrate according to some embodiments. Detailed Implementation

[0049] The technical solutions in some embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0050] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "example," or "some examples" are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0051] In the following description of embodiments of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0052] In describing some embodiments, the term "connection" and its derivative expressions may be used. The term "connection" should be interpreted broadly; for example, "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a direct connection or an indirect connection through an intermediate medium.

[0053] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0054] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0055] In this article, the use of “configured as” implies an open and inclusive language that does not preclude devices from being configured to perform additional tasks or steps.

[0056] In addition, the use of “based on” implies openness and inclusivity, because processes, steps, calculations or other actions “based on” one or more of the stated conditions or values ​​may in practice be based on additional conditions or values ​​beyond those stated.

[0057] As used herein, “about,” “approximately,” or “approximately” includes the stated value and the average value within an acceptable range of deviation from the given value, wherein the acceptable range of deviation is determined by a person skilled in the art taking into account the measurement under discussion and the error associated with the measurement of the given quantity (i.e., the limitations of the measurement system).

[0058] As used herein, “parallel,” “perpendicular,” and “equal” include the described situation and situations that are similar to the described situation, within an acceptable range of deviation, which is determined by those skilled in the art taking into account the measurement under discussion and the error associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, “parallel” includes absolute parallelism and approximate parallelism, where an acceptable range of deviation for approximate parallelism may be, for example, within 5°; “perpendicular” includes absolute perpendicularity and approximate perpendicularity, where an acceptable range of deviation for approximate perpendicularity may also be, for example, within 5°; “equal” includes absolute equality and approximate equality, where an acceptable range of deviation for approximate equality may be, for example, a difference between the two equals being less than or equal to 5% of either one.

[0059] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can mean that the layer or element is directly on the other layer or substrate, or that there is an intermediate layer between the layer or element and the other layer or substrate.

[0060] This document describes exemplary embodiments with reference to cross-sectional views and / or plan views, which are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are enlarged for clarity. Therefore, variations in shape relative to the drawings are contemplated due to, for example, manufacturing techniques and / or tolerances. Thus, exemplary embodiments should not be construed as being limited to the shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing processes. For example, etched areas shown as rectangular would typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of the areas of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0061] It should be noted that, for example, 11 to 1 in the accompanying drawings of this disclosure indicate that component 11 belongs to component 1. Figure 5A In the figure, 221 to 220 indicate that the pixel defining layer 221 belongs to the light-emitting functional layer 220. Other similar reference numerals appearing in the figure also follow the above description.

[0062] like Figure 1 As shown, some embodiments of this disclosure provide a light-emitting device 300, which includes a light-emitting substrate 200.

[0063] The aforementioned light-emitting device 300 is, for example, a QLED light-emitting device 300. In this case, the light-emitting substrate 200 is a QLED light-emitting substrate. Based on the quantum confinement effect, quantum dots possess excellent light-emitting properties such as broadband absorption, narrowband emission, and continuously tunable peak positions. Simultaneously, quantum dots are solution-processable, thus avoiding the use of expensive vacuum equipment, thereby enabling quantum dot light-emitting diodes (QLEDs) using quantum dots as the light-emitting material to serve as a novel type of light-emitting diode.

[0064] For example, such as Figure 1 As shown, the light-emitting device 300 also includes a driver chip 310. The driver chip 310 is used to drive the light-emitting substrate 200 to emit light.

[0065] In addition, the light-emitting device 300 may also include an under-display camera and an under-display fingerprint sensor, enabling the light-emitting device 300 to perform various functions such as taking photos, recording videos, fingerprint recognition, or facial recognition.

[0066] The aforementioned light-emitting device 300 can be any light-emitting device that displays either moving (e.g., video) or fixed (e.g., still image) text or images. More specifically, the light-emitting device 300 of the contemplated embodiments can be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigators, cockpit controllers and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0067] In some embodiments, such as Figure 2 and Figure 3 As shown, the light-emitting substrate 200 includes a substrate 210 and a plurality of light-emitting devices 100 disposed on the substrate 210.

[0068] For example, the light-emitting substrate 200 further includes a light-emitting functional layer 220 disposed on the substrate 210, the light-emitting functional layer 220 including a plurality of light-emitting devices 100.

[0069] For example, a plurality of light-emitting devices 100 may be arranged along a second direction Y, which is, for example, a direction parallel to the plane where the substrate 210 is located.

[0070] For example, the material of the substrate 210 can be a rigid material, such as glass, to realize a rigid substrate display; or the material of the substrate 210 can also be a flexible material, such as polyimide (PI) or polyethylene terephthalate (PET), to realize a flexible substrate display.

[0071] In some examples, such as Figure 2 As shown, the light-emitting substrate 200 also includes a driving circuit layer 230 disposed between the substrate 210 and the light-emitting functional layer 220, and the driving circuit layer 230 includes a plurality of pixel driving circuits 231.

[0072] For example, the pixel driving circuit 231 can generate a driving current. Each light-emitting device 100 can emit light under the driving action of the driving current generated by the corresponding pixel driving circuit 231. The light emitted by multiple light-emitting devices 100 cooperates with each other, thereby enabling the light-emitting substrate 200 to realize the functions of light emission or display.

[0073] In some examples, the driving circuit layer 230 includes crisscrossing strips of cathodes and anodes, with the intersecting portions emitting light. In this case, the pixel driving circuit 231 does not employ TFT technology, and the light-emitting substrate 200 can be referred to as a passive driving light-emitting substrate (e.g., a passive driving QLED light-emitting substrate, PMQLED light-emitting substrate).

[0074] In other examples, such as Figure 2 As shown, the driving circuit layer 230 includes multiple pixel driving circuits 231 arranged in an array, and each pixel driving circuit 231 includes multiple transistor TFTs. The pixel driving circuits 231 are electrically connected to the light-emitting device 100 and are used to drive the light-emitting device 100 to emit light. In this case, the pixel driving circuits 231 adopt TFT technology, and the light-emitting substrate 200 can be referred to as an active driving light-emitting substrate (e.g., an active driving QLED light-emitting substrate, an AMQLED light-emitting substrate).

[0075] In some examples, such as Figure 2 As shown, the light-emitting substrate 200 also includes an encapsulation layer 240, which is disposed on the side of the plurality of light-emitting devices 100 away from the substrate 210.

[0076] It should be understood that the encapsulation layer 240 can cover the light-emitting device 100 to prevent moisture and oxygen from the external environment from entering the light-emitting substrate 200, damaging the materials in the light-emitting device 100 and shortening the lifespan of the light-emitting substrate 200.

[0077] For example, such as Figure 2As shown, the driving circuit layer 230, the light-emitting functional layer 220 and the encapsulation layer 240 can be stacked on the substrate 210, and the driving circuit layer 230, the light-emitting functional layer 220 and the encapsulation layer 240 are arranged sequentially in a direction away from the substrate 210.

[0078] In some embodiments, such as Figure 3 and Figure 4 As shown, each of the plurality of light-emitting devices 100 includes an anode 11, a cathode 15, and a light-emitting layer 13. The anode 11 and the cathode 15 are disposed opposite to each other. The light-emitting layer 13 is located between the anode 11 and the cathode 15.

[0079] For example, the anode 11, the light-emitting layer 13, and the cathode 15 can be stacked along the first direction X, where the first direction X is the 210 thickness direction of the substrate.

[0080] Based on the above structure, the light-emitting principle of the light-emitting device 100 is as follows: the circuit connecting the anode 11 and the cathode 15 (e.g., pixel driving circuit 231, such as...) Figure 2 Holes are injected into the light-emitting layer 13 using the anode 11, and electrons are injected into the light-emitting layer 13 using the cathode 15. The injected electrons and holes form excitons (i.e., electron-hole pairs) in the light-emitting layer 13. The excitons return to the ground state through radiative transition and emit photons.

[0081] For example, in order to ensure that the light-emitting device 100 can emit light effectively, the anode 11 can be made of a material with a high work function. In this way, the holes generated by the anode 11 can be effectively migrated to the light-emitting layer 13 under the drive of the electric field, thereby recombine with the electrons generated by the cathode 15 to emit light.

[0082] In some examples, the anode 11 can be a transparent electrode. In this case, the material of the anode 11 can be indium tin oxide (ITO) or fluorine-doped tin dioxide conductive glass (FTO), or the material of the anode 11 can be a conductive polymer, such as polyaniline (PANI), polycarbazole (PZ), polythiophene (PTh), or polypropylene (PPy). In still other examples, the anode 11 can be an opaque electrode. In this case, the material of the anode 11 can be a metallic material, such as aluminum (Al) or silver (Ag).

[0083] For example, the cathode 15 can be made of a material with a low work function, which makes it easier for electrons from the cathode 15 to be injected into the adjacent film layer (e.g., the electron transport unit 14 described in detail below). In this way, the electrons generated by the cathode 15 can be effectively migrated to the light-emitting layer 13 under the drive of the electric field, thereby recombine with the holes generated by the anode 11 to emit light.

[0084] In some examples, the cathode 15 can be made of metal, metal oxide, or metal alloy. Metal materials include, for example, aluminum (Al), silver (Ag), gold (Au), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium (Li), potassium (K), sodium (Na), tin (Sn), titanium (Ti), lead (Pb), samarium (Sm), or yttrium (Y). Metal oxides include, for example, indium tin oxide (ITO) or indium zinc oxide (IZO). Metal alloys include, for example, magnesium-silver alloy (Mg:Ag), ytterbium-gold alloy (Yb:Au), ytterbium-silver alloy (Yb:Ag), lithium-aluminum alloy (Li:Al), or lithium-calcium-magnesium alloy (Li:Ca:Al). Alternatively, the cathode 15 can be made of a multilayer material, such as magnesium / aluminum (Mg / Al), magnesium / silver (Mg / Ag), aluminum / silver (Al / Ag), aluminum / gold (Al / Au), ytterbium / gold (Yb / Au), ytterbium / silver (Yb / Ag), calcium / magnesium (Ca / Mg), calcium / silver (Ca / Ag), barium / silver (Ba / Ag), etc.

[0085] In some examples, the light-emitting layer 13 is a quantum dot light-emitting layer. The material of the quantum dot light-emitting layer includes the quantum dot body and ligand materials coordinated to the quantum dot body.

[0086] In some examples, the quantum dot body may include any one or more of the following: group II-VI quantum dots, group III-V quantum dots, group IV-VI quantum dots, group IV quantum dots, group I-III-VI quantum dots, group I-II-IV-VI quantum dots, core-shell quantum dots, and ABX3 type perovskite quantum dots, or any combination thereof.

[0087] In other examples, the quantum dot bulk can be other nanoscale materials, such as nanorods, nanosheets, etc. The composition of other nanoscale materials may include at least one of CuInS2, CuInSe2, AgInS2, etc., but is not limited to these.

[0088] In some examples, the ligand material may be selected from any one or a combination of organic acids, organic amines, organophosphorus compounds, and organothiols. For example, the ligand material may be oleic acid, oleylamine, or dodecyl mercaptan.

[0089] In some embodiments, such as Figure 3 and Figure 4As shown, to improve luminous efficiency, the light-emitting device 100 further includes a hole transport unit 12, located on the side of the light-emitting layer 13 near the anode 11 and in contact with the light-emitting layer 13. The hole transport unit 12 includes, for example, at least one of a hole injection layer (HIL), a hole transport layer (HTL), and an electron blocking layer (EBL).

[0090] In some embodiments, such as Figure 3 and Figure 4 As shown, to improve luminous efficiency, the light-emitting device 100 further includes an electron transport unit 14, located on the side of the light-emitting layer 13 near the cathode 15 and in contact with the light-emitting layer 13. The electron transport unit 14 includes, for example, at least one of an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer (EBL).

[0091] By setting up film layers such as hole transport unit 12 and electron transport unit 14, it is equivalent to setting transition steps between anode 11 and light-emitting layer 13, and between cathode 15 and light-emitting layer 13, reducing the potential barrier height that carrier transitions need to overcome, and making the luminous efficiency higher.

[0092] For example, the material of the hole injection layer can be an organic material, such as poly(ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS); or, the material of the hole injection layer can be an inorganic oxide, such as molybdenum oxide (MoO). x )wait.

[0093] For example, the hole transport layer can be made of organic materials, such as poly(N-vinylcarbazole) (PVK), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)] (TFB), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), or 4,4',4”-tris(N-carbazolyl)triphenylamine (TAPC), etc.; or, the hole injection layer can be made of inorganic oxides, such as nickel oxide (NiO). x ) or vanadium oxide (VO x )wait.

[0094] For example, the material of the electron transport layer can be zinc oxide (ZnO) or zinc magnesium oxide (ZnMgO), etc. Here, zinc oxide (ZnO) and zinc magnesium oxide (ZnMgO) can be nanoparticles or thin films prepared by sputtering.

[0095] In some examples, the light-emitting device 100 can be classified as a positive light-emitting device and an inverted light-emitting device, depending on the type of electrode that contacts the substrate (e.g., including substrate 210 and driving circuit layer 230).

[0096] like Figure 5A As shown, when the electrode in contact with the substrate 210 is the anode 11, the light-emitting device 100 is a positive light-emitting device. The anode 11 in contact with the substrate 210 can realize the function of hole generation and injection. The structure of the positive light-emitting device includes, for example, an anode 11, a hole transport unit 12, a light-emitting layer 13, an electron transport unit 14, and a cathode 15 arranged sequentially in a direction away from the substrate 210.

[0097] like Figure 5B As shown, when the electrode in contact with the substrate 210 is the cathode 15, the light-emitting device 100 is an inverted light-emitting device. The cathode 15 in contact with the substrate 210 can realize the function of generating and injecting electrons. The structure of the inverted light-emitting device includes, for example, a cathode 15, an electron transport unit 14, a light-emitting layer 13, a hole transport unit 12, and an anode 11 arranged sequentially in a direction away from the substrate 210.

[0098] The hole transport unit 12 includes, for example, a hole injection layer and a hole transport layer. The electron transport unit 14 includes, for example, an electron transport layer. For exemplary descriptions of the cathode, electron transport layer, light-emitting layer, hole transport layer, hole injection layer, and anode, please refer to the foregoing sections, and they will not be repeated here.

[0099] It should be noted that, Figure 5A and Figure 5B This is a schematic diagram of the light-emitting substrate 200 with the driving circuit layer 230 omitted.

[0100] In some implementations, the electron transport material (e.g., ZnO or ZnMgO) used in the electron transport layer of the QLED light-emitting device has a large number of vacancy defects on its surface. These vacancy defects interact with hydrogen ions released from the acidic encapsulant (e.g., acrylic encapsulant), causing the QLED light-emitting device to undergo positive aging under the action of the acidic encapsulant. Under this positive aging effect, the device's efficiency, conductivity, light emission morphology, and operating life are all improved, thus enhancing the efficiency and operating life of the QLED light-emitting device to a certain extent.

[0101] However, as mentioned in the background, QLED devices exhibit poor stability under this positive aging process. One possible reason for this poor stability lies in the limited controllability of the positive aging process. For example, the content of acidic components in the acidic encapsulant is difficult to control, making it difficult to control the amount of hydrogen ions released from the encapsulant. Furthermore, the duration and intensity of the positive aging process are often uncontrollable. Additionally, the effects of acidic components in the encapsulant may not be replicable in actual mass production, further contributing to the poor controllability of the positive aging process. With poor controllability of the positive aging process, as the storage time of the device increases, the device itself becomes less stable, and storage stability becomes difficult to guarantee, sometimes leading to efficiency roll-off and deterioration of the luminous appearance. Therefore, in practical applications, utilizing the positive aging process to improve the performance of QLED devices is difficult to effectively utilize.

[0102] In some other implementations, the acidic component (e.g., acrylic acid) in the acidic encapsulant is highly acidic, and the positive aging effect occurs inside the light-emitting device. As the positive aging time continues, the acidic component in the acidic encapsulant may react with the material of the electron transport layer (e.g., ZnO) and / or the material of the electrode (anode or cathode), causing corrosion to the morphology of the light-emitting device and negatively affecting its performance.

[0103] In some implementations, a barrier layer is inserted between the electron transport layer and the metal electrode to reduce the intensity of positive aging. For example, an optical ZnO barrier layer is placed between the electron transport layer and the metal electrode of the light-emitting device, which weakens the interaction between ZnO and acrylic acid, thereby improving the performance and stability of the light-emitting device. However, while this method improves the stability of the QLED light-emitting device, it inevitably weakens the performance improvement effect brought about by positive aging.

[0104] Based on this, some embodiments of this disclosure provide a light-emitting device 100 to solve one or more of the above-mentioned problems. For example... Figures 6-8 As shown, the light-emitting device 100 also includes a first functional layer 14X and an auxiliary functional layer 16. The first functional layer 14X is located between the light-emitting layer 13 and the cathode 15. The auxiliary functional layer 16 is located on the side of the light-emitting layer 13 away from the anode 11.

[0105] For example, the auxiliary functional layer 16 is configured to at least transfer hydrogen elements from the auxiliary functional layer 16 to the first functional layer 14X.

[0106] In some examples, the first functional layer 14X may be at least one of an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer (EBL). For an understanding of the electron injection layer (EIL), electron transport layer (ETL), and hole blocking layer (EBL), please refer to the foregoing exemplary descriptions of the electron injection layer (EIL), electron transport layer (ETL), and hole blocking layer (EBL), which will not be repeated here.

[0107] In some examples, the first functional layer 14X may be an electron transport layer (ETL), and the material of the first functional layer 14X is zinc oxide (ZnO) or zinc magnesium oxide (ZnMgO).

[0108] In some examples, such as Figure 11 and Figure 12 As shown, the auxiliary functional layer 16 is located between the light-emitting layer 13 and the cathode 15.

[0109] At this time, as Figure 12 As shown, the auxiliary functional layer 16 can be located between the light-emitting layer 13 and the first functional layer 14X; or, as... Figure 11 As shown, the auxiliary functional layer 16 can be located between the cathode 15 and the first functional layer 14X. In this case, the auxiliary functional layer 16 can be in contact with the first functional layer 14X, and the auxiliary functional layer 16 can directly transfer hydrogen to the first functional layer 14X.

[0110] In some other examples, such as Figure 6 As shown, the auxiliary functional layer 16 is located on the side of the cathode 15 away from the light-emitting layer 13. In this case, hydrogen elements in the auxiliary functional layer 16 are transported to the first functional layer 14X via the cathode 15.

[0111] Here, the form in which hydrogen is transported from auxiliary functional layer 16 to first functional layer 14X is not limited. For example, hydrogen can include one or any combination of hydride ions, neutral hydrogen atoms, and hydride anions. When hydrogen includes neutral hydrogen atoms, the form in which neutral hydrogen atoms exist includes, but is not limited to, free radicals. Moreover, the hydrogen transported from auxiliary functional layer 16 to first functional layer 14X can be free hydrogen.

[0112] Understandably, through the above configuration, firstly, hydrogen can be transported from the auxiliary functional layer 16 to the first functional layer 14X, playing a positive aging role. This allows hydrogen to occupy the active sites (e.g., oxygen vacancy defects) on the surface of the first functional layer 14X, thereby improving the performance of the light-emitting device 100. The improved performance includes at least one of efficiency, conductivity, luminous morphology, and operating life. Secondly, when the active sites (e.g., oxygen vacancy defects) on the surface of the first functional layer 14X are occupied by hydrogen, the influence of other atmospheres on the light-emitting device 100 can be reduced. This improves the controllability of the positive aging process and enhances the stability of the light-emitting device 100. Thirdly, when the light-emitting device 100 includes the auxiliary functional layer 16, some implementations that involve acidic encapsulant treatment of the light-emitting device 100 can be omitted, thus avoiding the influence of acidic atmospheres on the morphology of the light-emitting device 100. Fourthly, the hydrogen element transported to the first functional layer 14X can act as a shallow donor in the first functional layer 14X, which can increase the carrier concentration of the first functional layer 14X and improve the conductivity of the first functional layer 14X.

[0113] To illustrate this more clearly, the following example uses ZnO as the material of the first functional layer 14X to demonstrate the state of hydrogen elements transported to the first functional layer 14X. When the material of the first functional layer 14X is ZnO, the hydrogen elements transported to the first functional layer 14X can exist in the first functional layer 14X in a free form, or they can enter the crystal lattice and connect with ZnO through chemical bonds to form Zn-HO or Zn-OH, etc., making the hydrogen elements a part of the first functional layer 14X; in other words, the hydrogen elements can act as a shallow donor in the ZnO material, thereby improving the conductivity of the ZnO material.

[0114] Based on the above structure, in some embodiments, such as Figure 1 As shown, the material of the encapsulation layer 240 includes neutral organic materials and / or alkaline organic materials.

[0115] In some examples, the encapsulation layer 240 includes a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer disposed sequentially in a direction away from the light-emitting device 100. In this case, the material of the first organic encapsulation layer includes the aforementioned neutral organic material and / or alkaline organic material.

[0116] Here, neutral organic materials are, for example, neutral resin materials. Alkaline organic materials are, for example, alkaline resin materials. For example, neutral resin materials can be epoxy resin or polyurethane, etc.

[0117] Understandably, the positive aging effect of the light-emitting device 100 can be achieved by adding active ingredients such as acids (e.g., acrylic acid) to the material of the encapsulation layer 240. When the light-emitting device 100 includes an auxiliary functional layer 16, the auxiliary functional layer 16 can be configured to at least transport hydrogen from the auxiliary functional layer 16 to the first functional layer 14X. Thus, it is not necessary to add acids (e.g., acrylic acid) to the material of the encapsulation layer 240. Therefore, neutral organic materials and / or alkaline organic materials can be used to encapsulate the light-emitting substrate 200.

[0118] It should be noted that the source of the hydrogen element transferred from the auxiliary functional layer 16 to the first functional layer 14X is not limited here. For example, the hydrogen element may include hydrogen element contained in the material of the auxiliary functional layer 16; or, for example, the hydrogen element may include hydrogen element generated under the action of the auxiliary functional layer 16.

[0119] The following will provide an exemplary description of the case where hydrogen is included in the material contained in the auxiliary functional layer 16.

[0120] In some embodiments, combined with Figure 6 The auxiliary functional layer 16 includes a first auxiliary functional layer 161. The material of the first auxiliary functional layer 161 includes an insulating material. The insulating material contains hydrogen.

[0121] In some examples, Fourier transform infrared spectroscopy (FTIR) or secondary ion mass spectrometer (SIMS) can be used to perform in-situ analysis of the hydrogen element contained in the first auxiliary functional layer 161 to achieve qualitative or quantitative measurement of the hydrogen element.

[0122] The material of the first auxiliary functional layer 161 includes an insulating material containing hydrogen. The hydrogen contained in the insulating material can be transported to the first functional layer 14X at least by diffusion, thereby achieving a positive aging effect.

[0123] In some embodiments, such as Figure 6 As shown, the first auxiliary functional layer 161 is disposed on the side of the cathode 15 away from the first functional layer 14X.

[0124] It should be understood that when the first auxiliary functional layer 161 is located on the side of the cathode 15 away from the first functional layer 14X, the hydrogen element in the first auxiliary functional layer 161 can be transferred to the first functional layer 14X via the cathode 15.

[0125] Understandably, since the region containing the cathode 15, anode 11, and the film layer between them is the region in the light-emitting device 100 used for transporting charge carriers, when the first auxiliary functional layer 161 is disposed on the side of the cathode 15 away from the first functional layer 14X, the first auxiliary functional layer 161 can be disposed outside the region of the light-emitting device 100 used for transporting charge carriers, so that the first auxiliary functional layer 161 will not affect the charge carrier transport performance of the light-emitting device 100. In this way, the influence of the first auxiliary functional layer 161 on the photoelectric performance of the light-emitting device 100 can be reduced.

[0126] In some examples, the surface of the first auxiliary functional layer 161 near the light-emitting layer 13 is a non-smooth surface. This reduces total internal reflection of light emitted by the light-emitting layer 13 at the surface of the first auxiliary functional layer 161 near the light-emitting layer 13, thereby improving the light extraction efficiency of the light-emitting device 100.

[0127] In some embodiments, such as Figure 7 As shown, the light-emitting device 100 also includes an auxiliary cathode 17. The auxiliary cathode 17 is located on the side of the first auxiliary functional layer 161 away from the cathode 15 and is electrically connected to the cathode 15.

[0128] It should be understood that when the auxiliary electrode 17 is electrically connected to the cathode 15, electrons can be transported between the auxiliary electrode 17 and the cathode 15. Thus, under the action of the driving voltage, electrons generated by the auxiliary electrode 17 can be transported to the light-emitting layer 13 via the cathode 15. In this case, the electrons injected into the light-emitting layer 13 can include both electrons generated by the cathode 15 and electrons generated by the auxiliary cathode 17. Moreover, the insulating material contained in the first auxiliary functional layer 161 will not affect the electron transport between the auxiliary cathode 17 and the cathode 15.

[0129] Understandably, through the above settings, the distance between the first auxiliary functional layer 161 and the first functional layer 14X can be made relatively small while ensuring the electron generation performance of the light-emitting device 100, thereby improving the diffusion effect of hydrogen.

[0130] In some embodiments, the auxiliary cathode 17 and the cathode 15 are electrically connected via a structure located outside the first auxiliary functional layer 161.

[0131] In some embodiments, such as Figure 7 As shown, the first auxiliary functional layer 161 includes a plurality of spaced vias 1611, and the auxiliary cathode 17 is electrically connected to the cathode 15 through the plurality of vias 1611.

[0132] It should be understood that when the first auxiliary functional layer 161 includes a plurality of spaced-apart vias 1611, the first auxiliary functional layer 161 can be a hollow structure. In this way, when the auxiliary cathode 17 is formed, the material of the auxiliary cathode 17 can fill the vias to achieve electrical connection between the auxiliary cathode 17 and the cathode 15. At this time, the auxiliary cathode 17 may include a portion located on the side of the first auxiliary functional layer 161 away from the cathode 15, and a portion located within the plurality of vias 1611.

[0133] For example, the aforementioned plurality of spaced vias 1611 may be formed by a patterning process.

[0134] Understandably, the above configuration achieves two objectives: First, it shortens the path for electrons generated by the auxiliary cathode 17 to travel to the cathode 15, thereby reducing the voltage drop between the auxiliary cathode 17 and the cathode 15 and improving the electron transport performance of the light-emitting device 100 to some extent. Second, it increases the electrical contact area between the auxiliary cathode 17 and the cathode 15, thus reducing the contact resistance between them to some extent.

[0135] In some embodiments, such as Figure 7 As shown, the dimension L1 of the auxiliary cathode 17 along the first direction X is greater than or equal to the dimension L2 of the cathode 15 along the first direction X, that is, L1≥L2. The first direction X is the thickness direction of the substrate 210.

[0136] Understandably, the above configuration allows the cathode 15 to be relatively thin, enabling hydrogen to diffuse through the thinner cathode 15 to the first functional layer 14X. This shortens the path of hydrogen from the first auxiliary functional layer 161 to the first functional layer 14X, thereby improving the hydrogen transport effect and enhancing the positive aging effect.

[0137] In some embodiments, such as Figure 7 As shown, the cathode 15 has a dimension L2 ranging from 10 nm to 50 nm along the first direction X. The auxiliary cathode 17 has a dimension L1 ranging from 10 nm to 100 nm along the first direction X. The first direction X is the thickness direction of the substrate.

[0138] For example, the size L2 of the cathode 15 along the first direction X can be 10nm, 20nm, 30nm, 40nm or 50nm, etc.

[0139] For example, the size L1 of the auxiliary cathode 17 along the first direction X can be 10nm, 30nm, 50nm, 80nm or 100nm, etc.

[0140] Understandably, through the above settings, while ensuring the electron generation performance of the light-emitting device 100, the path of hydrogen element transport from the first auxiliary functional layer 161 to the first functional layer 14X can be relatively short. In this way, the hydrogen element transport effect can be improved, and the positive aging effect can be enhanced.

[0141] In some embodiments, the light-emitting substrate 200 further includes a pixel defining layer 221. The pixel defining layer 221 is disposed on the substrate 210 and includes a plurality of pixel openings Q. A plurality of light-emitting devices 100 are correspondingly disposed within the plurality of pixel openings Q (e.g., ...). Figure 2 The cathode 15 is closer to the substrate 210 than the anode 11 (e.g., Figure 3 ), such as Figure 8 As shown, the first auxiliary functional layers 161 of multiple light-emitting devices 100 are connected to form a common functional layer, which is located between the pixel defining layer 221 and the substrate 210.

[0142] Here, the first auxiliary functional layers 161 of multiple light-emitting devices 100 are connected to form a common functional layer, which can be understood as the first auxiliary functional layers 161 of multiple light-emitting devices 100 being a structure with the entire layer connected; in some examples, the first auxiliary functional layers 161 of multiple light-emitting devices 100 are of the same layer and the same material, and are formed by a single process.

[0143] It should be understood that when the pixel defining layer 221 includes multiple pixel openings Q, and multiple light-emitting devices 100 are correspondingly disposed within the multiple pixel openings Q, the pixel defining layer 221 can be configured to define the pixel openings Q used to form the light-emitting devices 100. In this way, the light emitted by the light-emitting devices 100 can be emitted from the corresponding sub-pixel area, thus avoiding color crosstalk.

[0144] In some embodiments, such as Figure 8 As shown, the common functional layer includes multiple connection vias 1612, and the cathode 15 is connected to the pixel driving circuit 231 (see [reference]) through the connection vias 1612. Figure 2 Coupling. For example, cathode 15 can be connected to the source or drain of the TFT in pixel driving circuit 231 through via 1612, thus enabling the transmission of driving current.

[0145] Understandably, with the above configuration, the light-emitting device 100 is an inverted light-emitting device, so that the first auxiliary functional layer 161 can be located between the substrate 210 and the cathode 15. In this way, the multiple first auxiliary functional layers 161 of multiple light-emitting devices 100 can be connected as a common functional layer, thus simplifying the process of forming multiple first auxiliary functional layers 161 of multiple light-emitting devices 100 and simplifying the fabrication method of the light-emitting substrate 200.

[0146] In some embodiments, the material of the first auxiliary functional layer 161 includes one or any combination of silicon nitride (SiNx), silicon oxynitride (SiONx), and silicon oxide (SiOx).

[0147] It should be understood that silicon nitride (SiNx), silicon oxynitride (SiONx), and silicon oxide (SiOx) are transparent insulating materials.

[0148] For example, when the material of the first auxiliary functional layer 161 includes one or any combination of silicon nitride, silicon oxynitride, and silicon oxide, and FTIR is used for in-situ analysis of hydrogen, the hydrogen content can be calculated by measuring the characteristic peaks of NH bonds and Si-H bonds in the material of the first auxiliary functional layer 161.

[0149] In some examples, when the material of the first auxiliary functional layer 161 includes one or any combination of silicon nitride, silicon oxynitride, and silicon oxide, the process for forming the first auxiliary functional layer 161 is plasma-enhanced chemical vapor deposition (PECVD). The Si source used is SiH4, and the N source used is NH3. That is, both the Si source and the N source used contain hydrogen. As a result, there will be residual hydrogen in the formed first auxiliary functional layer 161. This simplifies the process of introducing hydrogen into the first auxiliary functional layer 161, thus simplifying the formation process of the first auxiliary functional layer 161.

[0150] Understandably, the above-described configuration simplifies the formation process of the first auxiliary functional layer 161 while achieving positive aging. Furthermore, the aforementioned material does not react with the electron transport layer material (e.g., ZnO) and / or the electrode material (anode 11 or cathode 15), thus avoiding any impact on the morphology of the light-emitting device 100.

[0151] In some embodiments, where the material of the first auxiliary functional layer 161 includes one or any combination of silicon nitride, silicon oxynitride, and silicon oxide, the first auxiliary functional layer 161 further includes hydrogen, wherein the atomic percentage of hydrogen in the first auxiliary functional layer 161 is greater than 0 and less than or equal to 30%.

[0152] For example, the atomic percentage of hydrogen in the first auxiliary functional layer 161 can be 0.1%, 3%, 5%, 7%, 9%, 11%, 13%, 15%, 17%, 19%, 21%, 23%, 25%, 27%, 29%, or 30%, etc.

[0153] Here, the percentage of hydrogen atoms in the first auxiliary functional layer 161 can be understood as the percentage of hydrogen atoms among all atoms in the first auxiliary functional layer 161.

[0154] For example, a secondary ion mass spectrometer (SIMS) or similar instrument can be used to perform in-situ analysis on the first auxiliary functional layer 161 of the light-emitting device 210 in the light-emitting substrate 200 to obtain the atomic percentage of hydrogen in the first auxiliary functional layer 161.

[0155] Understandably, the hydrogen element in the first auxiliary functional layer 161 can fill the oxygen vacancies in the first functional layer 14X. As the light-emitting device 100 continues to operate, the number of oxygen vacancies may gradually increase, or the hydrogen element filling the oxygen vacancies may gradually be lost. Therefore, through the above arrangement, the hydrogen element in the material of the first auxiliary functional layer 161 can be continuously replenished and fill the oxygen vacancies, thus achieving a positive aging effect and improving the stability of the light-emitting device 100.

[0156] In some embodiments, the forward aging effect of a first auxiliary functional layer 161 containing silicon nitride (SiNx) and the forward aging effect of an acrylic encapsulant were compared using single-electronic devices. Here, single-electronic devices A, B, and D each include two aluminum electrodes and an electron transport layer (made of ZnO) located between the two aluminum electrodes. Single-electronic device C includes two aluminum electrodes, an electron transport layer (made of ZnO) located between the two aluminum electrodes, and a first auxiliary functional layer 161 (made of SiNx) located on the side of one of the aluminum electrodes away from the electron transport layer. Furthermore, the substrate containing single-electronic device A is encapsulated with acrylic encapsulant; the substrates containing single-electronic device B, single-electronic device C, and single-electronic device D are also encapsulated with acrylic encapsulant.

[0157] Figure 9 The graphs show the current density versus voltage for single-electron device A and single-electron device B. Figure 9 It can be seen that the current density of single-electron device A is higher than that of single-electron device B, indicating that positive aging is achieved in the acrylic encapsulant atmosphere, resulting in relatively high conductivity of the electron transport layer.

[0158] Figure 10 The graphs show the current density versus voltage for single-electron devices C and D. Figure 10 It can be seen that the current density of single electronic device C is higher and the current density of single electronic device D is lower. This indicates that when a single electronic device includes the first auxiliary functional layer 161, it can achieve the same effect as acrylic encapsulant, achieve positive aging, and make the conductivity of the electron transport layer relatively high.

[0159] In some embodiments, the material of the first auxiliary functional layer 161 includes an insulating polymer material and a protic acid.

[0160] For example, the insulating polymer material may be polymethyl methacrylate or polytetrafluoroethylene, etc.

[0161] For example, the protic acid can be acrylic acid.

[0162] For example, when the material of the first auxiliary functional layer 161 includes an insulating polymer material and a protic acid, the hydrogen content in the first auxiliary functional layer 161 can be obtained by testing the concentration of hydrogen ions.

[0163] Understandably, by including an insulating polymer material in the material of the first auxiliary functional layer 161, the insulating polymer material can serve as the substrate of the first auxiliary functional layer 161. By including a protic acid in the material of the first auxiliary functional layer 161, hydrogen can be contained in the material of the first auxiliary functional layer 161. In this way, hydrogen can be transported from the auxiliary functional layer 16 to the first functional layer 14X to achieve positive aging.

[0164] In some embodiments, when the material of the first auxiliary functional layer 161 includes an insulating polymer material and a protic acid, the molar ratio of the protic acid to the insulating polymer material ranges from 2.5:10 to 3.5:10.

[0165] For example, the molar ratio of protic acid to insulating polymer material can be 2.5:10, 2.7:10, 2.9:10, 3.1:10, 3.2:10 or 3.5:10, etc.

[0166] Understandably, on the one hand, through the above-mentioned configuration, the material of the first auxiliary functional layer 161 contains a relatively large amount of hydrogen. As mentioned earlier, this allows the hydrogen in the material of the first auxiliary functional layer 161 to continuously replenish and fill oxygen vacancies, thus achieving a positive aging effect and improving the stability of the light-emitting device 100. On the other hand, through the above-mentioned configuration, the content of proton acid in the material of the first auxiliary functional layer 161 can be kept within a suitable range, thereby reducing the influence of proton acid on the morphology of the light-emitting device.

[0167] In some embodiments, the material of the first auxiliary functional layer 161 comprises a protonated organic molecular cage.

[0168] Here, a protonated organic molecular cage refers to an organic molecular cage containing protons (i.e., hydrogen elements, such as hydrogen ions). An organic molecular cage is an organic material with an internal cavity. In some examples, protons can combine with other atoms or molecules within the organic molecular cage to collectively form a protonated organic molecular cage.

[0169] Understandably, through the above settings, the material of the first auxiliary functional layer 161 can contain hydrogen elements, so that hydrogen elements can be transported from the auxiliary functional layer 16 to the first functional layer 14X to achieve positive aging.

[0170] In some embodiments, the atomic percentage of hydrogen in the first functional layer 14X is 1% to 30%.

[0171] For example, the atomic percentage of hydrogen in the first functional layer 14X can be 1%, 8%, 15%, 24%, or 30%, etc.

[0172] Here, the percentage of hydrogen atoms in the first functional layer 14X can be understood as the percentage of hydrogen atoms among all atoms in the first functional layer 14X.

[0173] In some examples, a secondary ion mass spectrometer (SIMS) or similar instrument can be used to perform in-situ analysis of the first functional layer 14X of the light-emitting device 210 in the light-emitting substrate 200 to obtain the atomic percentage of hydrogen in the first functional layer 14X.

[0174] Understandably, by setting it up as described above, the hydrogen content of the first functional layer 14X can be kept within a suitable range, which can achieve a strong positive aging effect. In this way, the performance of the light-emitting device 100 can be improved. Here, the improved performance includes at least one of efficiency, conductivity, light emission morphology and operating life.

[0175] In some embodiments, such as Figure 6 As shown, the size L0 of the first auxiliary functional layer 161 along the first direction X ranges from 550 nm to 1100 nm. The first direction X is the thickness direction of the substrate.

[0176] For example, the size L0 of the first auxiliary functional layer 161 along the first direction X can be 550nm, 600nm, 650nm, 750nm, 850nm, 950nm, 1000nm or 1100nm, etc.

[0177] For example, the light-emitting device 100 is used to emit red light, and the size L0 of the first auxiliary functional layer 161 along the first direction X can be in the range of 600nm to 1000nm, such as 600nm, 700nm, 750nm, 800nm, 900nm, or 1000nm. Preferably, the size L0 of the first auxiliary functional layer 161 along the first direction X can be 1000nm.

[0178] For example, the light-emitting device 100 is used to emit green or blue light, and the dimension L0 of the first auxiliary functional layer 161 along the first direction X can be in the range of 800nm ​​to 1000nm, such as 800nm, 840nm, 880nm, 920nm, 960nm, or 1000nm. Preferably, the dimension L0 of the first auxiliary functional layer 161 along the first direction X can be 1000nm.

[0179] It should be noted that the aforementioned size range includes both the case within the stated range and the case within a range that is approximately similar to the stated range, which is within an acceptable deviation range. This acceptable deviation range can be determined by someone skilled in the art, taking into account measurement-related errors (i.e., limitations of the measurement system). For example, the acceptable deviation range could be within ±50 nm; in other words, the size L0 of the first auxiliary functional layer 161 along the first direction X should fall within the stated range and within ±50 nm of the stated range, both within the stated range and within the stated range.

[0180] Understandably, when the dimension L0 of the first auxiliary functional layer 161 along the first direction X is small (e.g., less than 550 nm), the hydrogen content of the first auxiliary functional layer 161 may be low, which may affect the performance improvement effect of the forward aging process on the light-emitting device 100; when the dimension L0 of the first auxiliary functional layer 161 along the first direction X is large (e.g., greater than 550 nm), the hydrogen content of the first auxiliary functional layer 161 may be low, which may affect the performance improvement effect of the forward aging process on the light-emitting device 100.

[0181] At 1100nm, the overall thickness of the light-emitting device 100 may increase. Furthermore, when the light-emitting device 100 includes an auxiliary cathode 17, the charge carriers generated by the auxiliary cathode 17 need to pass through a thicker first auxiliary functional layer 161 to reach the first functional layer 14X, which may affect the carrier transport speed and thus the luminous efficiency of the light-emitting device 100. Therefore, through the above-described configuration, the dimension L0 of the first auxiliary functional layer 161 along the first direction X can be kept within a suitable range, achieving a stronger positive aging effect and keeping the overall thickness of the light-emitting device 100 within a suitable range, while also improving the luminous efficiency of the light-emitting device 100.

[0182] In some embodiments, combined with Figure 6 and Figure 7 The ratio of the dimension L0 of the first auxiliary functional layer 161 along the first direction X to the dimension L2 of the cathode 15 along the first direction X ranges from 5 to 110. The first direction X is the thickness direction of the substrate.

[0183] For example, the ratio of the dimension L0 of the first auxiliary functional layer 161 along the first direction to the dimension L2 of the cathode 15 along the first direction X can be 5, 5.5, 10, 20, 30, 40, 50, 60, 70, 80, 90, 100 or 110, etc.

[0184] Understandably, through the above settings, while ensuring the electron generation performance of the light-emitting device 100, the size L2 of the cathode 15 along the first direction X can be made relatively small, making it easier for hydrogen elements to be transported from the first auxiliary functional layer 161 to the first functional layer 14X. In this way, the hydrogen element transport effect can be improved, and the positive aging effect can be enhanced.

[0185] In some examples, the first auxiliary functional layer 161 can be an opaque film layer, and the material of the first auxiliary functional layer 161 is an opaque insulating material; in this case, the first auxiliary functional layer 161 can be disposed on the non-light-emitting side of the light-emitting device 100.

[0186] In some other examples, the first auxiliary functional layer 161 can be a transparent film layer, and the material of the first auxiliary functional layer 161 is a transparent insulating material; in this case, the first auxiliary functional layer 161 can be disposed on the light-emitting side of the light-emitting device 100.

[0187] In some embodiments, the transmittance of the first auxiliary functional layer 161 is greater than or equal to 80%.

[0188] For example, the transmittance of the first auxiliary functional layer 161 can be 80%, 85%, 90%, 95%, 98%, or 100%, etc.

[0189] Understandably, the above-described configuration allows for a relatively high transmittance of the first auxiliary functional layer 161, thereby improving the light extraction efficiency of the light-emitting device 100. Furthermore, when the first auxiliary functional layer 161 includes multiple spaced vias 1611, the perforated and highly transmittance first auxiliary functional layer 161 can be patterned to form a periodic structure. This allows the light-emitting side of the light-emitting device 100 to form a periodic photonic crystal structure or a periodic microlens structure, further improving the light extraction efficiency of the light-emitting device 100.

[0190] The above is an exemplary description of hydrogen elements including hydrogen elements contained in the material of the auxiliary functional layer 16. The following will be an exemplary description of the case where hydrogen elements include hydrogen elements generated under the action of the auxiliary functional layer 16.

[0191] In some embodiments, such as Figure 11 and Figure 12As shown, the auxiliary functional layer 16 of the light-emitting device 100 includes a second auxiliary functional layer 162. The second auxiliary functional layer 162 is disposed between the cathode 15 and the light-emitting layer 13. The material of the second auxiliary functional layer 162 includes a nanocatalyst material, which is configured to dissociate hydrogen in a hydrogen atmosphere under preset conditions.

[0192] For example, the size of the second auxiliary functional layer 162 along the first direction X can be 30nm to 50nm, such as 30nm, 40nm, 45nm or 50nm.

[0193] In some examples, such as Figure 11 As shown, the second auxiliary functional layer 162 is disposed between the cathode 15 and the first functional layer 14X.

[0194] In some other examples, such as Figure 12 As shown, the second auxiliary functional layer 162 is disposed between the first functional layer 14X and the light-emitting layer 13.

[0195] It should be understood that nanocatalyst materials have carrier transport properties, therefore, the second auxiliary functional layer 162 can be disposed between the cathode 15 and the light-emitting layer 13.

[0196] Understandably, on the one hand, such as Figure 13 As shown, after the nanocatalyst material (e.g., platinum Pt) dissociates hydrogen in a hydrogen atmosphere, it can generate at least one of neutral hydrogen atoms, cations, and anions. The hydrogen can then be transported from the second auxiliary functional layer 162 to the first functional layer 14X to fill oxygen vacancy defects in the electron transport material of the first functional layer 14X, achieving a positive aging effect. Furthermore, by controlling the intensity of the hydrogen atmosphere treatment, such as controlling the hydrogen flow rate and duration, the controllability of the positive aging effect can be improved, thereby enhancing the stability of the light-emitting device 100.

[0197] It should be noted that, Figure 13 In this context, HH represents hydrogen molecules. It represents a positive hydrogen ion, a neutral hydrogen atom, or a negative hydrogen ion.

[0198] In some embodiments, the nanocatalyst material includes one or any combination of metals, metal oxides and metal complexes.

[0199] In some examples, when the nanocatalyst material includes a metal, the metal can be platinum (Pt) or nickel (Ni), etc.

[0200] In some examples, when the nanocatalyst material includes a metal oxide, the metal oxide can be the photocatalyst titanium dioxide.

[0201] In some examples, when the nanocatalyst material includes a metal complex, the metal complex can be a metallocene compound, such as an iron complex or a cobalt complex.

[0202] Understandably, metal, metal oxide, and metal complex nanomaterials can effectively adsorb hydrogen molecules and dissociate them to generate hydrogen elements. The generated hydrogen elements can be transported from the second auxiliary functional layer 162 to the first functional layer 14X to achieve positive aging. Moreover, metal, metal oxide, and metal complex nanomaterials have excellent conductivity and chemical stability, and will not have a negative effect on the light-emitting device 100, thus improving the stability of the light-emitting device 100.

[0203] In some embodiments, such as Figure 11 As shown, the second auxiliary functional layer 162 has a dimension L3 ranging from 30 nm to 80 nm along the first direction X. The first direction X is the thickness direction of the substrate 210.

[0204] For example, the size L3 of the second auxiliary functional layer 162 along the first direction X can be 30nm, 40nm, 50nm, 60nm, 70nm or 80nm, etc.

[0205] Understandably, when the dimension L3 of the second auxiliary functional layer 162 along the first direction X is small (e.g., less than 30 nm), the content of the nano-catalyst material in the second auxiliary functional layer 162 may be low, resulting in a smaller amount of dissociated hydrogen, which may affect the effect of forward aging on the performance improvement of the light-emitting device 100. When the dimension L3 of the second auxiliary functional layer 162 along the first direction X is large (e.g., greater than 80 nm), the amount of nano-catalyst material in the second auxiliary functional layer 162 may be greater than the amount required for hydrogen dissociation, and the overall thickness of the light-emitting device 100 may be thicker. Therefore, through the above settings, the thickness of the second auxiliary functional layer 162 can be kept within a suitable range, which can improve the effect of forward aging on the performance improvement of the light-emitting device 100 and keep the overall thickness of the light-emitting device 100 within a suitable range.

[0206] In some embodiments, the auxiliary functional layer 16 includes a first auxiliary functional layer 161 and / or a second auxiliary functional layer 162. The first auxiliary functional layer 161 is disposed on the side of the cathode 15 away from the first functional layer 14X. The material of the first auxiliary functional layer 161 includes an insulating material. The insulating material contains hydrogen. The second auxiliary functional layer 162 is disposed between the cathode 15 and the light-emitting layer 13. The material of the second auxiliary functional layer 162 includes a nanocatalyst material, which is configured to dissociate hydrogen in a hydrogen atmosphere under preset conditions.

[0207] Figure 18The flowchart illustrates a method for fabricating a light-emitting substrate 200 according to some embodiments of this disclosure. It should be understood that the operations shown in the fabrication methods described below are not exhaustive, and other operations may be performed before, after, or between any of the shown operations.

[0208] On another front, some embodiments of this disclosure provide a method for preparing a light-emitting substrate 200, such as... Figure 18 As shown, the preparation method includes steps S1 to S3.

[0209] S1: Forming substrate 210.

[0210] S2: A plurality of light-emitting devices 100 are formed on one side of the substrate 210. Each light-emitting device 100 includes a cathode 15, an anode 11, a light-emitting layer 13, a first functional layer 14X, and an auxiliary functional layer 16. The cathode 15 and anode 11 are disposed opposite to each other. The light-emitting layer 13 is located between the cathode 15 and the anode 11. The first functional layer 14X is located between the light-emitting layer 13 and the cathode 15. The auxiliary functional layer 16 is located on the side of the light-emitting layer 13 away from the anode 11.

[0211] S3: An encapsulation layer 240 is formed on the side of the plurality of light-emitting devices 100 away from the substrate 210.

[0212] The beneficial effects that can be achieved by the above-described method for preparing the light-emitting substrate are the same as those that can be achieved by the above-described light-emitting substrate, and will not be repeated here.

[0213] In some embodiments, the auxiliary functional layer 16 includes a first auxiliary functional layer 161 disposed on the side of the cathode 15 away from the first functional layer 14X. The material of the first auxiliary functional layer 161 includes an insulating material. The insulating material contains hydrogen.

[0214] The fabrication method of the light-emitting substrate 200 also includes S2A.

[0215] S2A: After forming multiple light-emitting devices 100, the multiple light-emitting devices 100 are subjected to heat treatment.

[0216] Understandably, heat treatment can accelerate the movement of hydrogen elements from the first auxiliary functional layer 161 to the first functional layer 14X. For example, when the material of the first auxiliary functional layer 161 includes an insulating polymer material and a protic acid, the hydrogen ions in the protic acid move faster under thermal effects. This increases the diffusion rate of hydrogen elements to the first functional layer 14X, achieving positive aging in a shorter time. This improves the controllability of the positive aging process and enhances the stability of the light-emitting device 100. Furthermore, when the material in the first auxiliary functional layer 161 is one or any combination of silicon nitride, silicon oxynitride, and silicon oxide, the NH bonds and / or Si-H bonds in the material can break during heating, forming hydrogen elements.

[0217] In some embodiments, the processing temperature range for the heat treatment is 80°C to 120°C.

[0218] For example, the heat treatment temperature can be 80°C, 90°C, 100°C, 110°C or 120°C, etc.

[0219] In some embodiments, the heat treatment time ranges from 10 min to 120 min.

[0220] For example, the heat treatment time can be 10 min, 32 min, 55 min, 76 min, 98 min, or 120 min, etc.

[0221] Understandably, when the heat treatment temperature is low (e.g., below 80°C) or the heat treatment time is short (e.g., less than 0.8 h), the impact on the generation and movement of hydrogen in the first auxiliary functional layer 161 may be small, potentially affecting the performance improvement effect of the positive aging process on the light-emitting device 100. Conversely, when the heat treatment temperature is high (e.g., above 120°C) or the heat treatment time is long (e.g., above 12 h), it may adversely affect the material of the light-emitting device 100. Therefore, by setting the above parameters, the heat treatment temperature and / or time can be kept within a suitable range, ensuring the performance improvement effect of the positive aging process on the light-emitting device 100 while avoiding the impact of the heat treatment on the material of the light-emitting device 100.

[0222] In some embodiments, S2 includes S2.1a to S2.4a.

[0223] S2.1a: An anode 11 is formed on one side of the substrate 210.

[0224] S2.2a: A light-emitting layer 13 is formed on the side of the anode 11 away from the substrate 210.

[0225] S2.3a: A first functional layer 14X is formed on the side of the light-emitting layer 13 away from the anode 11.

[0226] S2.4a: A cathode 15 is formed on the side of the first functional layer 14X away from the light-emitting layer 13.

[0227] It should be understood that when S2 includes S2.1a to S2.4a, the light-emitting device 100 is an upright light-emitting device.

[0228] In some other embodiments, S2 includes S2.1b to S2.4b.

[0229] S2.1b: A cathode 15 is formed on one side of the substrate 210.

[0230] S2.2b: A first functional layer 14X is formed on the side of the cathode 15 away from the substrate 210.

[0231] S2.3b: A light-emitting layer 13 is formed on the side of the first functional layer 14X away from the cathode 15.

[0232] S2.4b: An anode 11 is formed on the side of the light-emitting layer 13 away from the first functional layer 14X.

[0233] It should be understood that when S2 includes S2.1b to S2.4b, the light-emitting device 100 is an inverted light-emitting device.

[0234] In some embodiments, S2 further includes S2B.

[0235] S2B: An auxiliary functional layer 16 is formed on the side of the anode 11 away from the light-emitting layer 13.

[0236] For example, when the auxiliary function layer 16 includes a first auxiliary function layer 161, S2B includes S2B.1.

[0237] S2B.1: A first auxiliary functional layer 161 is formed on the side of the cathode 15 away from the first functional layer 14X.

[0238] For example, if S2 includes S2.1a to S2.4a, S2B.1 can be performed after S2.4a and before S3. Furthermore, if S2 includes S2.1a to S2.4a and also includes S2A, S2B.1 can be performed after S2.4a and before S2A. If S2 includes S2.1b to S2.4b, S2B.1 can be performed after S1 and before S2.1b.

[0239] For example, when the auxiliary function layer 16 includes a first auxiliary function layer 161 and the light-emitting device 100 is a positive light-emitting device, S2 further includes S2.5a.

[0240] S2.5a: After S2B.1 and before S3, an auxiliary cathode 17 is formed on the side of the first auxiliary functional layer 161 away from the cathode 15.

[0241] In some embodiments, the method for preparing the light-emitting substrate 200 further includes S2C.

[0242] S2C: Hydrogen ion implantation is performed on the first auxiliary functional layer 161.

[0243] It should be understood that S2C can be performed after S2B.1.

[0244] In some examples, the hydrogen ion implantation of the first auxiliary functional layer 161 can be performed in a hydrogen plasma atmosphere, so that the atomic percentage of hydrogen in the first auxiliary functional layer 161 reaches 50%.

[0245] Understandably, by implanting hydrogen ions into the first auxiliary functional layer 161, the hydrogen content of the first auxiliary functional layer 161 can be increased. In this way, the amount of hydrogen transferred from the first auxiliary functional layer 161 to the first functional layer 14X can be increased, thereby enhancing the effect of positive aging.

[0246] In some embodiments, the method for preparing the light-emitting substrate 200 further includes S2D.

[0247] S2D: Hydrogen ion implantation is performed on the first functional layer 14X.

[0248] For example, if S2 includes S2.1a to S2.4a, S2D can be performed after S2.4a and before S2B.1.

[0249] For example, hydrogen ion implantation of the first functional layer 14X can be performed in a hydrogen plasma atmosphere. The processing time can be from 1 min to 5 min, for example, 1 min, 2 min, 3 min, 4 min, or 5 min.

[0250] Understandably, by implanting hydrogen ions into the first functional layer 14X, the hydrogen content of the first functional layer 14X can be increased, thereby increasing the amount of hydrogen in the first functional layer 14X and enhancing the effect of positive aging.

[0251] In some embodiments, the auxiliary functional layer 16 includes a second auxiliary functional layer 162 disposed between the cathode 15 and the light-emitting layer 13. The material of the second auxiliary functional layer 162 includes a nanocatalyst material. The nanocatalyst material is configured to dissociate hydrogen in a hydrogen atmosphere under preset conditions.

[0252] The method for fabricating the light-emitting substrate 200 further includes: forming a first functional layer 14X and a second auxiliary functional layer 162. The first functional layer 14X and the second auxiliary functional layer 162 are processed in a hydrogen atmosphere.

[0253] Understandably, through the above setup, hydrogen in the hydrogen atmosphere can dissociate under the action of the nanocatalyst material, generating hydrogen elements, which then diffuse into the first functional layer 14X, forming a positive aging effect. Moreover, when forming a positive aging effect in this way, the controllability of the positive aging effect can be improved by controlling the intensity of the hydrogen atmosphere treatment, such as controlling the hydrogen flow rate and the introduction time, thereby improving the stability of the light-emitting device 100.

[0254] In order to objectively evaluate the technical effects of the embodiments of this disclosure, the technical solutions provided by this disclosure will be described in detail and by way of example through the following experimental examples and comparative examples.

[0255]

Example 1

[0256] The following embodiments demonstrate the fabrication of a light-emitting substrate 200, which includes a light-emitting device 100. The structure of the light-emitting device 100 is as follows: Figure 14 As shown. The preparation method includes R1 to R8.

[0257] R1: Deposit the material of anode 11 on substrate 210 to form anode 11.

[0258] For example, prior to R1, a patterned pixel defining layer is formed on substrate 210, the pixel defining layer including a plurality of pixel openings.

[0259] R2: Deposit hole injection layer 121 material on the side of anode 11 away from substrate 210 to form hole injection layer 121.

[0260] R3: Deposit hole transport layer 122 material on the side of hole injection layer 121 away from anode 11 to form hole transport layer 122.

[0261] R4: Deposit the material of the quantum dot light-emitting layer 13 on the side of the hole transport layer 122 away from the hole injection layer 121, and pattern the material of the deposited quantum dot light-emitting layer 13 using photolithography.

[0262] R5: Deposit zinc oxide or zinc magnesium oxide on the side of the light-emitting layer 13 away from the hole transport layer 122 to form the first functional layer 14X.

[0263] For example, the first functional layer 14X can be zinc oxide nanoparticles or magnesium zinc oxide nanoparticles.

[0264] For example, the process for forming the first functional layer 14X can be a sputtering process.

[0265] R6: A cathode 15 is formed on the side of the first functional layer 14X away from the light-emitting layer 13.

[0266] For example, the process for forming the cathode 15 can be a magnetron sputtering process, in which case the material of the cathode 15 can be IZO.

[0267] For example, the process of forming the cathode 15 can be a vapor deposition process, in which case the material of the cathode 15 can be aluminum (Al), silver (Ag) or a magnesium-silver alloy (Mg:Ag).

[0268] For example, the thickness of the cathode 15 can be 10nm to 100nm, such as 10nm, 20nm, 40nm, 60nm, 70nm, 90nm or 100nm.

[0269] R7: Using a low-temperature chemical vapor deposition (CVD) process, the material of the first auxiliary functional layer 161 is deposited on the side of the cathode 15 away from the first functional layer 14X to form the first auxiliary functional layer 161. The material of the first auxiliary functional layer 161 includes silicon nitride (SiN). x ), silicon oxynitride (SiON) x ) and silicon dioxide (SiO) x At least one of the following.

[0270] R8: The light-emitting device is processed using a hydrogen plasma treatment process to increase the hydrogen content in the first functional layer 14X and the first auxiliary functional layer 161.

[0271]

Example 2

[0272] The following embodiments demonstrate the fabrication of a light-emitting substrate 200, which includes a light-emitting device 100. The structure of the light-emitting device 100 is as follows: Figure 14 As shown. The preparation method includes M1 to M8.

[0273] M1: Forms anode 11.

[0274] M2: Formation of hole injection layer 121.

[0275] M3: Forms hole transport layer 122.

[0276] M4: Forms luminescent layer 13.

[0277] M5: Forms the first functional layer 14X.

[0278] M6: Forms cathode 15.

[0279] M7: The light-emitting device 100 is treated with hydrogen plasma to increase the hydrogen content in the first functional layer 14X.

[0280] For example, the hydrogen plasma treatment time can be from 1 min to 5 min, such as 1 min, 2 min, 3 min, 4 min or 5 min.

[0281] M8: Forms the first auxiliary function layer 161.

[0282] Here, the understanding of M1 forming the anode 11, M2 forming the hole injection layer 121, M3 forming the hole transport layer 122, M4 forming the light-emitting layer 13, M5 forming the first functional layer 14X, M6 forming the cathode 15, and M8 forming the first auxiliary functional layer 161 can be found in the description of R1 forming the anode 11, R2 forming the hole injection layer 121, R3 forming the hole transport layer 122, R4 forming the light-emitting layer 13, R5 forming the first functional layer 14X, R6 forming the cathode 15, and R7 forming the first auxiliary functional layer 161 in the aforementioned section, and will not be repeated here.

[0283]

Example 3

[0284] The following embodiments demonstrate the fabrication of a light-emitting substrate 200, which includes a light-emitting device 100. The structure of the light-emitting device 100 is as follows: Figure 15 As shown. This preparation method includes N1 to N9.

[0285] N1: Forms anode 11.

[0286] N2: Formation of hole injection layer 121.

[0287] N3: Forms hole transport layer 122.

[0288] N4: Forms the luminescent layer 13.

[0289] N5: Forms the first functional layer 14X.

[0290] N6: Forms cathode 15.

[0291] For example, the thickness of the cathode 15 can be 10nm to 20nm, such as 10nm, 12nm, 14nm, 16nm, 18nm, or 20nm.

[0292] N7: Forms the first initial auxiliary function layer.

[0293] N8: Using photolithography, the first initial auxiliary functional layer is patterned to form the first auxiliary functional layer 161 and multiple vias 1611, exposing part of the cathode 15 and forming a hollow structure.

[0294] N9: Forming an auxiliary cathode 17; depositing material of the auxiliary cathode 17 on the first auxiliary functional layer 161, the material of the auxiliary cathode 17 filling multiple vias 1611.

[0295] For example, the thickness of the auxiliary cathode 17 can be 10nm to 100nm, such as 10nm, 20nm, 40nm, 60nm, 70nm, 90nm or 100nm.

[0296] Here, the understanding of N1 forming the anode 11, N2 forming the hole injection layer 121, N3 forming the hole transport layer 122, N4 forming the light-emitting layer 13, N5 forming the first functional layer 14X, N6 forming the cathode 15, and N7 forming the first initial auxiliary functional layer can be found in the description of R1 forming the anode 11, R2 forming the hole injection layer 121, R3 forming the hole transport layer 122, R4 forming the light-emitting layer 13, R5 forming the first functional layer 14X, R6 forming the cathode 15, and R7 forming the first auxiliary functional layer 161 in the aforementioned section, and will not be repeated here.

[0297]

Example 4

[0298] The following embodiments demonstrate the fabrication of a light-emitting substrate 200, which includes a light-emitting device 100. The structure of the light-emitting device 100 is as follows: Figure 15 As shown. The preparation method includes P1 to P10.

[0299] P1: Forms anode 11.

[0300] P2: Formation of hole injection layer 121.

[0301] P3: Formation of hole transport layer 122.

[0302] P4: Formation of luminescent layer 13.

[0303] P5: Form the first functional layer 14X.

[0304] P6: Forms cathode 17.

[0305] P7: The light-emitting device 100 is treated by hydrogen plasma treatment to increase the hydrogen content in the first functional layer 14X.

[0306] For example, the hydrogen plasma treatment time can be from 1 min to 5 min, such as 1 min, 2 min, 3 min, 4 min or 5 min.

[0307] P8: Form the first initial auxiliary function layer.

[0308] P9: Using photolithography, the first initial auxiliary functional layer is patterned to form multiple first auxiliary functional layers 161 and vias 1611, exposing part of the cathode 15 and forming a hollow structure.

[0309] P10: Forming an auxiliary cathode 17; depositing material of the auxiliary cathode 17 on the first auxiliary functional layer 161, the material of the auxiliary cathode 17 filling multiple vias 1611.

[0310] For example, the thickness of the auxiliary cathode 17 can be 10nm to 100nm, such as 10nm, 20nm, 40nm, 60nm, 70nm, 90nm or 100nm.

[0311] Here, the understanding of P1 forming an anode 11, P2 forming a hole injection layer 121, P3 forming a hole transport layer 122, P4 forming a light-emitting layer 13, P5 forming a first functional layer 14X, P6 forming a cathode 15, and P8 forming a first initial auxiliary functional layer can be found in the description of R1 forming an anode 11, R2 forming a hole injection layer 121, R3 forming a hole transport layer 122, R4 forming a light-emitting layer 13, R5 forming a first functional layer 14X, R6 forming a cathode 15, and R7 forming a first auxiliary functional layer 161 in the preceding section, and will not be repeated here.

[0312]

Example 5

[0313] The following embodiments demonstrate the fabrication of a light-emitting substrate 200, which includes a light-emitting device 100. The structure of the light-emitting device 100 is as follows: Figure 14 As shown. The preparation method includes Q1 to Q7.

[0314] Q1: Forming anode 11.

[0315] Q2: Formation of hole injection layer 121.

[0316] Q3: Formation of hole transport layer 122.

[0317] Q4: Formation of luminescent layer 13.

[0318] Q5: Form the first functional layer 14X.

[0319] Q6: Form cathode 15.

[0320] Q7: Deposit the material of the first auxiliary functional layer 161 on the side of the cathode 15 away from the first functional layer 14X to form the first auxiliary functional layer 161. The material of the first auxiliary functional layer 161 includes a polymer material and a protic acid. The insulating polymer material is, for example, polymethyl methacrylate or polytetrafluoroethylene, and the protic acid is, for example, acrylic acid.

[0321] Here, the understanding of Q1 forming the anode 11, Q2 forming the hole injection layer 121, Q3 forming the hole transport layer 122, Q4 forming the light-emitting layer 13, Q5 forming the first functional layer 14X, and Q6 forming the cathode can be found in the description of R1 forming the anode 11, R2 forming the hole injection layer 121, R3 forming the hole transport layer 122, R4 forming the light-emitting layer 13, R5 forming the first functional layer 14X, and R6 forming the cathode in the aforementioned section, and will not be repeated here.

[0322]

Example 6

[0323] The following embodiments demonstrate the fabrication of a light-emitting substrate 200, which includes a light-emitting device 100. The structure of the light-emitting device 100 is as follows: Figure 14 As shown. This preparation method includes F1 to F7.

[0324] F1: Forms anode 11.

[0325] F2: Formation of hole injection layer 121.

[0326] F3: Formation of hole transport layer 122.

[0327] F4: Formation of luminescent layer 13.

[0328] F5: Forms the first functional layer 14X.

[0329] F6: Forms cathode 15.

[0330] F7: Deposit the material of the first auxiliary functional layer 161 on the side of the cathode 15 away from the first functional layer 14X to form the first auxiliary functional layer 161. The material of the first auxiliary functional layer 161 includes protonated organic molecular cages.

[0331] Here, the understanding of F1 forming the anode 11, F2 forming the hole injection layer 121, F3 forming the hole transport layer 122, F4 forming the light-emitting layer 13, F5 forming the first functional layer 14X, and F6 forming the cathode can be found in the description of R1 forming the anode 11, R2 forming the hole injection layer 121, R3 forming the hole transport layer 122, R4 forming the light-emitting layer 13, R5 forming the first functional layer 14X, and R6 forming the cathode in the aforementioned section, and will not be repeated here.

[0332]

Example 7

[0333] The following examples demonstrate the fabrication of a light-emitting substrate 200, combined with... Figure 8 The light-emitting substrate 200 includes an inverted light-emitting device 100, the structure of which is as follows: Figure 14 As shown. The preparation method includes T1 to T8.

[0334] T1: Deposit the first auxiliary functional layer 161 material on the substrate 210 to form the first auxiliary functional layer 161. Here, the first auxiliary functional layer 161 can be a common functional layer of multiple light-emitting devices 100, forming a fully connected structure.

[0335] T2: A plurality of spaced cathodes 15 are formed on the side of the first auxiliary functional layer 161 away from the substrate 210.

[0336] T3: A patterned pixel delimiting layer is formed on the first auxiliary function layer 161, the pixel delimiting layer including multiple pixel openings.

[0337] T4: Deposit zinc oxide or zinc magnesium oxide on the side of the cathode 15 away from the first auxiliary functional layer 161 to form the first functional layer 14X.

[0338] T5: Deposit the material of the quantum dot light-emitting layer 13 on the side of the first functional layer 14X away from the cathode 15, and use photolithography to pattern the material of the deposited quantum dot light-emitting layer 13 to form the light-emitting layer 13.

[0339] T6: Deposit hole transport layer 122 material on the side of the light-emitting layer 13 away from the first functional layer 14X to form hole transport layer 122.

[0340] T7: Deposit hole injection layer 121 material on the side of hole transport layer 122 away from light emission layer 13 to form hole injection layer 121.

[0341] T8: Anode 11 material is deposited on the side of hole injection layer 121 away from hole transport layer 122 to form anode 11.

[0342] For an understanding of the film materials and thicknesses used in T1 to T8, please refer to the exemplary descriptions of the materials and thicknesses used in the corresponding film layers of R1 to R8 in the preceding sections, which will not be repeated here.

[0343]

Example 8

[0344] The following embodiments demonstrate the fabrication of a light-emitting substrate 200, which includes a light-emitting device 100. The structure of the light-emitting device 100 is as follows: Figure 16 As shown. The preparation method includes A1 to A8.

[0345] A1: Prepare the substrate, which includes a substrate 210 and a patterned anode 11 disposed on the substrate 210; ultrasonically clean the substrate sequentially with deionized water, isopropanol, and acetone for 15 minutes each. After drying with nitrogen, bake for 10 minutes, followed by ultraviolet ozone treatment for 10 minutes.

[0346] A2: In an air atmosphere, spin-coat PEDOT:PSS solution onto the substrate at a spin speed of 3000 r / min to form a hole injection layer 121; then anneal at 120°C for 20 minutes. After annealing and cooling, transfer the substrate with the hole injection layer 121 to a glove box filled with nitrogen.

[0347] A3: In a nitrogen-filled glove box, spin-coat a TFB solution (concentration of 8 mg / mL) on the side of the hole injection layer 121 away from the anode 11 at a spin speed of 3000 r / min to form a hole transport layer 122; then anneal at 120°C for 20 minutes.

[0348] A4: In a nitrogen-filled glove box, spin-coat a red quantum dot solution (quantum dots are CdSe / CdS, concentration 20mg / mL) on the side of the hole transport layer 122 away from the hole injection layer 121 at a spin-coating speed of 3000r / min to form an initial light-emitting layer. Then anneal at 100℃ for 5 minutes. After annealing and waiting for the substrate to cool, pattern the initial light-emitting layer to form the light-emitting layer 13.

[0349] A5: In a nitrogen-filled glove box, spin-coat a ZnO solution on the side of the light-emitting layer 13 away from the hole transport layer 122 at a spin speed of 2000 r / min to form the first functional layer 14X, and then anneal at 80°C for 10 minutes.

[0350] A6: In a nitrogen-filled glove box, a platinum film is prepared by spin coating on the side of the first functional layer 14X away from the light-emitting layer 13 at a spin coating speed of 3000 r / min to form the second auxiliary functional layer 162. Then, it is annealed at 80°C for 5 minutes and then treated in a hydrogen atmosphere.

[0351] A7: Transfer the substrate with the second auxiliary functional layer 162 to a pressure below 4×10 -4 An aluminum electrode with a thickness of 100 nm is deposited in a vacuum evaporation chamber at a deposition rate of 0.3 nm / s.

[0352] A8: After the light-emitting device 100 is prepared, multiple light-emitting devices 100 are encapsulated with epoxy encapsulant in a nitrogen environment, and encapsulation tests are performed using a dry sheet.

[0353]

Example 9

[0354] The following embodiments demonstrate the fabrication of a light-emitting substrate 200, which includes a light-emitting device 100. The structure of the light-emitting device 100 is as follows: Figure 16 As shown. The preparation method includes B1 to B8.

[0355] B1: Prepare anode 11.

[0356] B2: Formation of hole injection layer 121.

[0357] B3: Formation of hole transport layer 122.

[0358] B4: In a nitrogen-filled glove box, spin-coat a green quantum dot solution (quantum dots are CdSe / ZnS, concentration is 20mg / mL) on the side of the hole transport layer 122 away from the hole injection layer 121 at a spin-coating speed of 3000r / min to form the initial light-emitting layer 13; then anneal at 100℃ for 5 minutes. After annealing and waiting for the substrate to cool, pattern the initial light-emitting layer to form the light-emitting layer 13.

[0359] B5: Form the first functional layer 14X.

[0360] B6: Forms the second auxiliary functional layer 162.

[0361] B7: Forms cathode 15.

[0362] B8: Package.

[0363] Here, the understanding of B1 preparing the anode 11, B2 forming the hole injection layer 121, B3 forming the hole transport layer 122, B5 forming the first functional layer 14X, B6 forming the second auxiliary functional layer 162, B7 forming the cathode 15, and B8 packaging can be found in the description of A1 preparing the anode 11, A2 forming the hole injection layer 121, A3 forming the hole transport layer 122, A5 forming the first functional layer 14X, A6 forming the second auxiliary functional layer 162, A7 forming the cathode 15, and A8 packaging in the aforementioned section, and will not be repeated here.

[0364]

Example 10

[0365] The following embodiments demonstrate the fabrication of a light-emitting substrate 200, which includes a light-emitting device 100. The structure of the light-emitting device 100 is as follows: Figure 16 As shown. The preparation method includes C1 to C8.

[0366] C1: Prepare anode 11.

[0367] C2: Formation of hole injection layer 121.

[0368] C3: Formation of hole transport layer 122.

[0369] C4: Forms the luminescent layer 13.

[0370] C5: In a nitrogen-filled glove box, spin-coat a ZnMgO solution onto the side of the light-emitting layer 13 away from the hole transport layer 122 at a spin-coating speed of 2000 r / min to form the first functional layer 14X, and then anneal at 80°C for 10 minutes.

[0371] C6: Forms the second auxiliary functional layer 162.

[0372] C7: Forms cathode 15.

[0373] C8: Package.

[0374] Here, the understanding of C1 preparing the anode 11, C2 forming the hole injection layer 121, C3 forming the hole transport layer 122, C4 forming the light-emitting layer 13, C6 forming the second auxiliary functional layer 162, C7 forming the cathode 15, and C8 encapsulation can be found in the description of A1 preparing the anode 11, A2 forming the hole injection layer 121, A3 forming the hole transport layer 122, A4 forming the light-emitting layer 13, A6 forming the second auxiliary functional layer 162, A7 forming the cathode 15, and A8 encapsulation in the aforementioned section, and will not be repeated here.

[0375]

Example 11

[0376] The following embodiments demonstrate the fabrication of a light-emitting substrate 200, which includes an inverted light-emitting device 100 that emits red light. The structure of the inverted light-emitting device 100 is as follows: Figure 17 As shown. The preparation method includes D1 to D9.

[0377] D1: Prepare the substrate, which includes substrate 210. Clean substrate 210 by ultrasonic cleaning in the order of deionized water, isopropanol, and acetone for 15 minutes each. After drying with nitrogen, bake for 10 minutes, and then perform ultraviolet ozone treatment for 10 minutes.

[0378] D2: Transfer the substrate to a pressure below 4×10 -4 In the vacuum evaporation chamber of Pa, silver material is deposited on the substrate 210 to form the cathode 15.

[0379] D3: Transfer the substrate with cathode 15 to a glove box filled with nitrogen. Spin-coat a ZnMgO solution (concentration of 25 mg / mL) on the side of cathode 15 away from substrate 210 at a spin speed of 2000 r / min to form the first functional layer 14X. Then anneal at 80°C for 10 minutes. After annealing, wait for the substrate to cool.

[0380] D4: In a nitrogen-filled glove box, a platinum film is spin-coated on the side of the first functional layer 14X away from the cathode 15 at a spin speed of 3000 r / min to form the second auxiliary functional layer 162; then annealed at 80°C for 5 minutes, and then processed in a hydrogen atmosphere.

[0381] D5: In a nitrogen-filled glove box, spin-coat a quantum dot solution (quantum dots are CdSe / CdS, concentration 20mg / mL) on the side of the second auxiliary functional layer 162 away from the first functional layer 14X at a spin-coating speed of 3000r / min, and then anneal at 100℃ for 5 minutes to form the luminescent layer 13.

[0382] D6: Transfer the substrate with the light-emitting layer 13 to a pressure below 4×10 -4 In a vacuum evaporation chamber, TAPC material for hole transport layer 122 is deposited on the side of the light-emitting layer 13 away from the second auxiliary functional layer 162 to form hole transport layer 122.

[0383] D7: MoO3 material for hole injection layer 121 is vapor-deposited on the side of hole transport layer 122 away from light-emitting layer 13 to form hole injection layer 121.

[0384] D8: Anode 11 material Mg / Ag is vapor-deposited on the side of hole injection layer 121 away from hole transport layer 122 to form anode 11.

[0385] D9: After the light-emitting device 100 is prepared, multiple light-emitting devices 100 are encapsulated with epoxy encapsulant in a nitrogen environment, and encapsulation tests are performed using a dry sheet.

[0386]

Example 12

[0387] The following embodiments demonstrate the fabrication of a light-emitting substrate 200, which includes an inverted light-emitting device 100 that emits green light. The structure of the inverted light-emitting device 100 is as follows: Figure 17 As shown. The preparation method includes E1 to E9.

[0388] E1: Prepare the substrate.

[0389] E2: Forms cathode 15.

[0390] E3: In a nitrogen-filled glove box, spin-coat a ZnO solution (concentration of 20 mg / mL) on the side of the cathode 15 away from the substrate 210 at a spin speed of 2000 r / min to form the first functional layer 14X; then anneal at 80°C for 10 minutes.

[0391] E4: Form the second auxiliary function layer 162.

[0392] E5: In a nitrogen-filled glove box, spin-coat a quantum dot solution (quantum dots are CdSe / ZnS, concentration 20mg / mL) on the side of the second auxiliary functional layer 162 away from the first functional layer 14X at a spin-coating speed of 3000r / min, and then anneal at 100℃ for 5 minutes to form a light-emitting layer 13.

[0393] E6: Formation of hole transport layer 122.

[0394] E7: Formation of hole injection layer 121.

[0395] E8: Forms anode 11.

[0396] E9: Packaging test.

[0397] For an understanding of the process of preparing the substrate (E1), forming the cathode (E2), forming the hole transport layer (E6), forming the hole injection layer (E7), forming the anode (E8), and packaging and testing (E9), please refer to the description of the process of preparing the substrate (D1), forming the cathode (D2), forming the hole transport layer (D6), forming the hole injection layer (D7), forming the anode (D8), and packaging and testing (D9) in the preceding section. It will not be repeated here.

[0398] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A light-emitting substrate, characterized in that, include: Substrate; Multiple light-emitting devices are disposed on the substrate; the light-emitting devices include: The cathode and anode are positioned opposite each other; A light-emitting layer is located between the cathode and the anode; The first functional layer is located between the light-emitting layer and the cathode; An auxiliary functional layer is located on the side of the light-emitting layer away from the anode; An encapsulation layer is disposed on the side of the plurality of light-emitting devices away from the substrate; The auxiliary function layer includes: A first auxiliary functional layer is disposed on the side of the cathode away from the first functional layer; and / or, A second auxiliary functional layer is disposed between the cathode and the light-emitting layer, and the material of the second auxiliary functional layer includes a nano-catalyst material. The material of the first auxiliary functional layer includes any one of silicon nitride, silicon oxynitride, silicon oxide, and protonated organic molecular cages; The nanocatalyst material includes any one of metals, metal oxides, and metal complexes.

2. The light-emitting substrate according to claim 1, characterized in that, In the case where the auxiliary functional layer includes a first auxiliary functional layer, the light-emitting device further includes: An auxiliary cathode is located on the side of the first auxiliary functional layer away from the cathode and is electrically connected to the cathode.

3. The light-emitting substrate according to claim 2, characterized in that, The first auxiliary functional layer includes a plurality of spaced-apart vias; the auxiliary cathode is electrically connected to the cathode through the plurality of vias.

4. The light-emitting substrate according to claim 2, characterized in that, The dimension of the auxiliary cathode along the first direction is greater than or equal to the dimension of the cathode along the first direction; the first direction is the thickness direction of the substrate.

5. The light-emitting substrate according to claim 2, characterized in that, The cathode has a size range of 10nm to 50nm along the first direction; the auxiliary cathode has a size range of 10nm to 100nm along the first direction; the first direction is the thickness direction of the substrate.

6. The light-emitting substrate according to any one of claims 2 to 5, characterized in that, Also includes: A pixel defining layer is disposed on the substrate and includes a plurality of pixel openings; a plurality of light-emitting devices are correspondingly disposed within the plurality of pixel openings; the cathode is closer to the substrate than the anode; The first auxiliary functional layers of the plurality of light-emitting devices are connected to form a common functional layer, which is located between the pixel defining layer and the substrate.

7. The light-emitting substrate according to any one of claims 2 to 5, characterized in that, The size range of the first auxiliary functional layer along the first direction is 550nm~1100nm; the first direction is the thickness direction of the substrate.

8. The light-emitting substrate according to any one of claims 2 to 5, characterized in that, The ratio of the dimension of the first auxiliary functional layer along the first direction to the dimension of the cathode along the first direction is in the range of 5 to 110; the first direction is the thickness direction of the substrate.

9. The light-emitting substrate according to any one of claims 2 to 5, characterized in that, The light transmittance of the first auxiliary functional layer is greater than or equal to 80%.

10. The light-emitting substrate according to claim 1, characterized in that, In the case where the auxiliary functional layer includes a second auxiliary functional layer, the size range of the second auxiliary functional layer along the first direction is 30nm~80nm; the first direction is the thickness direction of the substrate.

11. A light-emitting device, characterized in that, It includes a driver chip and a light-emitting substrate as described in any one of claims 1 to 10, wherein the driver chip is used to drive the light-emitting substrate to emit light.

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