Semiconductor reaction chamber and semiconductor reaction equipment

Abstract

This disclosure relates to a semiconductor reaction chamber and a semiconductor reaction apparatus. The semiconductor reaction chamber includes a chamber body, a heat exchange device, a temperature measuring device, and a temperature control device. The chamber body has an internal cavity. The heat exchange device is at least partially disposed on the sidewall of the chamber body for heat exchange with the cavity. The temperature measuring device is disposed on the chamber body for measuring the temperature of the sidewall. The temperature control device is connected to the heat exchange device to adjust the temperature of the heat exchange medium within the heat exchange device. The semiconductor reaction chamber of this disclosure can, as far as possible, ensure that the temperature on the sidewall of the chamber body remains consistent or within a specific temperature range during the operation of the semiconductor reaction chamber, thereby reducing the temperature difference on the sidewall of the chamber body over a certain period of time. Based on this, it reduces or even avoids the problem of particle shedding from the sidewall of the chamber, ensuring the processing quality and efficiency of the wafer.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor device processing technology, and more specifically, to a semiconductor reaction chamber and a semiconductor reaction apparatus. Background Technology

[0002] Semiconductor reaction chambers are essential core components in the processing of semiconductor devices. In related technologies, semiconductor reaction chambers use a constant-temperature heat exchange medium, such as cooling water, to regulate the temperature of the chamber's sidewalls and the interior of the chamber. However, during continuous operation, the temperature inside the semiconductor reaction chamber changes, resulting in a significant temperature difference on the chamber's sidewalls over a certain period. This causes the sidewalls to be subjected to cyclical cold and thermal stresses, which can easily lead to particle shedding from the sidewalls, thereby affecting the processing quality and efficiency of semiconductor devices. Utility Model Content

[0003] The purpose of this disclosure is to provide a semiconductor reaction chamber and a semiconductor reaction apparatus, wherein the semiconductor reaction chamber is capable of adjusting the temperature of the heat exchange medium to at least partially solve the above-mentioned technical problems.

[0004] To achieve the above objectives, a first aspect of this disclosure provides a semiconductor reaction chamber, comprising: a chamber body having a cavity inside; a heat exchange device at least partially disposed on a side wall of the chamber body for heat exchange with the cavity; a temperature measuring device disposed on the chamber body for measuring the temperature of the side wall; and a temperature control device connected to the heat exchange device for adjusting the temperature of the heat exchange medium in the heat exchange device.

[0005] Optionally, the heat exchange device includes a heat exchange pipeline for the flow of the heat exchange medium, and the side wall has a heat exchange cavity; the heat exchange pipeline is arranged around the periphery of the cavity through the heat exchange cavity; and / or, the heat exchange pipeline is coiled at the top and / or bottom of the cavity through the heat exchange cavity.

[0006] Optionally, the heat exchange chamber is provided on the peripheral wall, top wall and bottom wall of the cavity body, and the heat exchange pipelines in at least two of the heat exchange chambers are connected by connecting pipelines.

[0007] Optionally, the heat exchange pipeline includes a first connection port and a second connection port, wherein the first connection port is connected to the inlet of the temperature control device, and the second connection port is connected to the outlet of the temperature control device.

[0008] Optionally, the temperature control device includes a heat exchanger having a first inlet, a first outlet, a second inlet, and a second outlet, the first inlet and the first outlet forming the inlet and the outlet, and the heat exchanger including a first pipeline and a second pipeline disposed adjacent to the first pipeline, the two ends of the first pipeline being connected to the first inlet and the first outlet respectively, and the two ends of the second pipeline being connected to the second inlet and the second outlet respectively.

[0009] Optionally, there are multiple temperature control devices, and the multiple temperature control devices are connected to the heat exchange pipeline.

[0010] Optionally, there are multiple temperature measuring devices, which are spaced apart on the side wall of the cavity body.

[0011] Optionally, the temperature measuring device includes one of a thermocouple, a resistance temperature detector (RTD), and a thermistor.

[0012] Optionally, the chamber may have a gas spray head and / or a stage.

[0013] A second aspect of this disclosure provides a semiconductor reaction apparatus, including the aforementioned semiconductor reaction chamber.

[0014] Through the above technical solution, the semiconductor reaction chamber of this disclosure, by setting a temperature measuring device and a temperature control device, enables the temperature control device to adjust the temperature of the heat exchange medium in the heat exchange device in a timely manner according to the temperature measured by the temperature measuring device. This ensures that the temperature on the side wall of the chamber body remains consistent or within a specific temperature range during the operation of the semiconductor reaction chamber, thereby reducing the temperature difference on the side wall of the chamber body within a certain period of time. Based on this, the problem of particle shedding from the side wall of the chamber is reduced or even avoided, ensuring the processing quality and efficiency of the wafer.

[0015] Other features and advantages of this disclosure will be described in detail in the following detailed description section. Attached Figure Description

[0016] The accompanying drawings are provided to further illustrate the present disclosure and form part of the specification. They are used together with the following detailed description to explain the present disclosure, but do not constitute a limitation thereof. In the drawings: Figure 1 This is a schematic diagram of the structure provided in the embodiments of this disclosure.

[0017] Explanation of reference numerals in the attached figures 1-Cavity body; 2-Heat exchange device; 21-Heat exchange pipeline; 211-First connecting port; 212-Second connecting port; 3-Temperature measuring device; 4-Temperature control device; 41-Inlet; 42-Outlet; 5-Gas spray head; 6-Platform; 100-Cavity; 200-Heat exchange chamber; 300-Heat exchanger; 301-First inlet; 302-First outlet; 303-Second inlet; 304-Second outlet; 310-First pipeline; 320-Second pipeline. Detailed Implementation

[0018] The specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit this disclosure.

[0019] In this disclosure, unless otherwise stated, directional terms such as "inner" and "outer" refer to "inner" and "outer" relative to the contour of the corresponding component itself. Furthermore, the terms "first," "second," and "third," etc., used in this disclosure are for distinguishing one element from another and do not have sequential or importance implications. Additionally, in the following description, when referring to the accompanying drawings, unless otherwise explained, the same reference numerals in different drawings denote the same or similar elements. The above definitions are for explanation and illustration only and should not be construed as limiting this disclosure.

[0020] The semiconductor reaction chamber in the exemplary embodiments of this disclosure will now be described with reference to the accompanying drawings.

[0021] refer to Figure 1 As shown, in a first aspect of this disclosure, a semiconductor reaction chamber is provided, including a chamber body 1, a heat exchange device 2, a temperature measuring device 3, and a temperature control device 4. The chamber body 1 has a chamber 100 inside. The heat exchange device 2 is at least partially disposed on the side wall of the chamber body 1 to exchange heat with the chamber 100. The temperature measuring device 3 is disposed on the chamber body 1 for measuring the temperature of the side wall. The temperature control device 4 is connected to the heat exchange device 2 to adjust the temperature of the heat exchange medium in the heat exchange device 2.

[0022] During operation, the heat exchange medium in the heat exchange device 2 continuously exchanges heat with the sidewalls and interior of the cavity body 1. The temperature measuring device 3 monitors the temperature of the sidewalls of the cavity body 1 in real time. For example, when the temperature of the sidewalls exceeds a preset temperature range, the temperature control device 4 can adjust the temperature of the heat exchange medium, such as by lowering the temperature of the heat exchange medium. In this way, even if the temperature inside the cavity body 1 gradually increases or shows an upward trend due to long-term operation, the temperature on the sidewalls of the cavity body 1 can be kept as consistent as possible or maintained within a specific temperature range. This reduces the temperature difference on the sidewalls of the cavity body 1 over a certain period of time, avoiding the cyclic action of cold and thermal stress on the sidewalls due to large temperature differences. Based on this, the problem of particle shedding from the sidewalls of the cavity body 1 is reduced or even avoided, ensuring the processing quality and efficiency of the wafer.

[0023] Among them, the temperature measuring device 3 can be connected to the controller to provide timely feedback of the measured side wall temperature to the controller, and the temperature control device 4 can also be connected to the controller to adjust the temperature of the heat exchange medium when the side wall temperature measured by the temperature measuring device 3 exceeds the preset temperature range.

[0024] In addition, the heat exchange medium disclosed herein can be configured as cooling water.

[0025] In embodiments of this disclosure, the heat exchange device 2 may include a heat exchange pipe 21 for the flow of the heat exchange medium, with a heat exchange cavity 200 in its side wall; the heat exchange pipe 21 is arranged around the periphery of the chamber 100 through the heat exchange cavity 200; and / or, the heat exchange pipe 21 is coiled at the top and / or bottom of the chamber 100 through the heat exchange cavity 200. The heat exchange device 2 may also include a pump body, which can drive the heat exchange medium to circulate in the heat exchange pipe 21. When the heat exchange cavity 200 is arranged on the periphery, top, and bottom of the chamber 100, the heat exchange area between the heat exchange pipe 21 and the chamber body 1 can be maximized, thereby ensuring the heat exchange effect of the heat exchange device 2 on the chamber body 1.

[0026] The heat exchange device 2 may also include a liquid storage tank located outside the cavity body 1, and the heat exchange pipeline 21 may also be connected to the liquid storage tank, which facilitates the storage and replacement of the heat exchange medium.

[0027] In addition, the heat exchange pipe 21 can be wound around the periphery of the chamber 100 or coiled around the top and / or bottom of the chamber 100 as needed. This method of setting up the heat exchange pipe 21 over a large area can not only improve the heat exchange efficiency of the heat exchange device 2, but also minimize the temperature difference at different locations of the chamber body 1 and ensure temperature consistency.

[0028] Furthermore, the heat exchange pipe 21 is located within the heat exchange chamber 200. This not only reduces the space occupied by the semiconductor reaction chamber but also provides some protection for the heat exchange pipe 21, preventing damage due to external forces or environmental factors. This arrangement also minimizes the heat conduction distance, allowing the heat exchange medium within the heat exchange pipe 21 to exchange heat rapidly, thereby further improving heat exchange efficiency.

[0029] In order to improve the heat exchange efficiency of the heat exchange device 2 for the side wall and / or cavity body 1, more heat exchange pipes 21 can be set in local areas with large temperature changes to improve the heat exchange effect in these areas.

[0030] Furthermore, if the heat exchange pipes 21 in each heat exchange chamber 200 are set up independently, and if a problem occurs in one of the heat exchange pipes 21 in the heat exchange chamber 200, the heat exchange pipes 21 in the remaining heat exchange chambers 200 can continue to perform heat exchange.

[0031] In some possible implementations, heat exchange chambers 200 are provided on the peripheral wall, top wall, and bottom wall of the cavity body 1, and heat exchange pipes 21 in at least two heat exchange chambers 200 are connected by connecting pipes. That is, heat exchange pipes 21 in different heat exchange chambers 200 can be connected together by connecting pipes. This arrangement avoids the need for independent heat exchange pipes 21 in each heat exchange chamber 200, thereby simplifying the piping arrangement in the heat exchange device 2.

[0032] In addition, each connecting pipe can be equipped with a valve body. The valve body can be opened as needed and the opening degree can be adjusted to regulate the flow rate of the heat exchange medium in the heat exchange pipes 21 in different heat exchange chambers 200. For example, when a problem occurs in the heat exchange pipe 21 in a certain heat exchange chamber 200, the valve body can be closed, so that the heat exchange pipes 21 in other heat exchange chambers 200 can still maintain the working state, ensuring the normal operation of the semiconductor reaction chamber. Alternatively, the opening degree of the valve body can be adjusted according to the heat in different areas of the chamber body 1. For example, when the heat generated in the bottom area of ​​the chamber body 1 is high, the opening degree of the valve body on the connecting pipe connected to the heat exchange pipe 21 in the chamber body 1 can be increased, thereby ensuring the heat exchange efficiency of the heat exchange device 2.

[0033] In embodiments of this disclosure, the heat exchange pipeline 21 may include a first connection port 211 and a second connection port 212. The first connection port 211 may be connected to the inlet 41 of the temperature control device 4, and the second connection port 212 may be connected to the outlet 42 of the temperature control device 4. The temperature control device 4 can adjust the temperature of the heat exchange medium in the heat exchange pipeline 21 according to the temperature fed back by the temperature measuring device 3. When the temperature measured by the temperature measuring device 3 is within a preset temperature range, the temperature control device 4 may be in a non-working state and may only be used as a pipeline for the flow of the heat exchange medium. However, when the temperature measuring device 3 detects that the temperature of the sidewall exceeds the preset temperature range, the temperature control device 4 may be in a working state to adjust the temperature of the heat exchange medium located between its inlet 41 and outlet 42, so that the temperature on the sidewall can be kept as consistent as possible or maintained within a specific temperature range, thereby reducing the temperature difference of the sidewall of the cavity body 1 within a certain period of time and reducing or even avoiding the problem of particle shedding from the sidewall of the cavity body 1.

[0034] Alternatively, in some possible implementations, the heat exchange pipeline 21 may be provided with a first branch pipe and a second branch pipe. The two ends of the first branch pipe may be connected to the inlet 41 of the temperature control device 4 via the first connection port 211, and the two ends of the second branch pipe may be connected to the outlet 42 of the temperature control device 4 via the second connection port 212. The first branch pipe and the second branch pipe may be provided with regulating valves. When the temperature control device 4 does not need to regulate the temperature of the heat exchange medium, the regulating valves may be closed, so that the heat exchange medium circulates only in the heat exchange pipeline 21. When the temperature control device 4 needs to regulate the temperature of the heat exchange medium, the regulating valves may be open, so that the heat exchange medium can flow through the temperature control device 4.

[0035] The temperature control device 4 may include a heat exchanger 300, which has a first inlet 301, a first outlet 302, a second inlet 303, and a second outlet 304. The first inlet 301 and the first outlet 302 form the aforementioned inlet 41 and outlet 42. The heat exchanger 300 includes a first pipe 310 and a second pipe 320 disposed adjacent to the first pipe 310. The two ends of the first pipe 310 are respectively connected to the first inlet 301 and the first outlet 302, and the two ends of the second pipe 320 are respectively connected to the second inlet 303 and the second outlet 304.

[0036] In this way, when the temperature control device 4 is not needed, the heat exchange medium in the heat exchange pipeline 21 can enter the first pipeline 310 from the first inlet 301 and exit from the first outlet 302 through the first pipeline 310 to flow back into the heat exchange pipeline 21. At this time, no other medium flows in the second pipeline 320. However, after the temperature measuring device 3 detects that the temperature of the side wall exceeds the preset temperature range, other media, such as the second heat exchange medium, can enter the second pipeline 320 from the second inlet 303 and flow out from the second outlet 304 through the second pipeline 320. During this process, the second heat exchange medium in the second pipeline 320 can exchange heat with the heat exchange medium in the first pipeline 310, thereby achieving the adjustment of the temperature of the heat exchange medium in the heat exchange pipeline 21.

[0037] Alternatively, the temperature control device 4 can be a commonly available water temperature regulator or other heat exchangers.

[0038] In some possible implementations, there can be multiple temperature control devices 4 connected to the heat exchange pipeline 21. This arrangement allows the temperature control devices 4 to more accurately and quickly adjust the temperature of the heat exchange medium in the heat exchange pipeline 21 in different areas of the cavity body 1. For example, when there are multiple heat exchange chambers 200 in the cavity body 1, each heat exchange chamber 200 can correspond to one temperature control device 4. If each heat exchange chamber 200 is set independently, the temperature control device 4 can adaptively adjust the temperature of the heat exchange medium according to the temperature of each heat exchange chamber 200. If the heat exchange pipelines 21 between each heat exchange chamber 200 can be interconnected, multiple temperature control devices 4 can also work together to adjust the temperature of the heat exchange medium in the heat exchange pipeline 21 to improve heat exchange efficiency. In addition, even if one temperature control device 4 malfunctions and cannot work, the remaining temperature control devices 4 can still adjust the temperature of the heat exchange medium.

[0039] Furthermore, multiple temperature measuring devices 3 can be provided, and these devices can be spaced apart on the sidewall of the cavity body 1. The arrangement of multiple temperature measuring devices 3 allows for precise detection of the sidewall temperature in a localized area of ​​the cavity body 1. Even if one temperature measuring device 3 malfunctions, the others can still function normally. Therefore, the temperature measuring devices 3 can promptly report the temperature on the sidewall, enabling the temperature control device 4 to adjust the temperature of the heat exchange medium accordingly.

[0040] The temperature measuring device 3 may include one of a thermocouple, a resistance temperature detector (RTD), or a thermistor. These devices can meet the temperature measurement requirements of the sidewall of the semiconductor reaction chamber, and are simple in structure and easy to use. They improve the temperature measurement efficiency while ensuring the accuracy of the temperature measurement.

[0041] In embodiments of this disclosure, the chamber 100 may also include a gas spray head 5 and / or a stage 6. The gas spray head 5 is connected to a gas delivery pipe and is disposed in the middle region of the top of the chamber 100 so that it can uniformly spray the reaction gas into the chamber 100; the stage 6 can effectively fix the wafer to facilitate wafer processing operations.

[0042] A second aspect of this disclosure provides a semiconductor reaction apparatus, including the aforementioned semiconductor reaction chamber. It should be noted that this semiconductor reaction apparatus possesses all the beneficial effects of the aforementioned semiconductor reaction chamber, which will not be elaborated upon here.

[0043] In summary, this disclosure exemplarily illustrates the working principle of a semiconductor reaction chamber.

[0044] When the semiconductor reaction chamber is in operation, the temperature measuring device 3 can monitor the temperature of the sidewall of the chamber body 1 in real time. When it detects that the temperature of the sidewall exceeds the preset temperature range, the temperature control device 4 can adjust the temperature of the heat exchange medium so that the sidewall of the chamber body 1 can be kept as consistent as possible or maintained within a specific temperature range. This reduces the temperature difference of the sidewall of the chamber body 1 within a certain period of time and avoids the sidewall being subjected to the cyclic action of cold stress and thermal stress due to a large temperature difference. Based on this, the problem of particle shedding from the sidewall of the chamber body 1 is reduced or even avoided, ensuring the processing quality and efficiency of the wafer.

[0045] The preferred embodiments of this disclosure have been described in detail above with reference to the accompanying drawings. However, this disclosure is not limited to the specific details of the above embodiments. Within the scope of the technical concept of this disclosure, various simple modifications can be made to the technical solutions of this disclosure, and these simple modifications all fall within the protection scope of this disclosure.

[0046] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, this disclosure will not describe the various possible combinations separately.

[0047] Furthermore, various different embodiments of this disclosure can be combined in any way, as long as they do not violate the spirit of this disclosure, they should also be regarded as the content disclosed in this disclosure.

Claims

1. A semiconductor reaction chamber, characterized in that, include: The cavity body has internal chambers; A heat exchange device is at least partially disposed on the side wall of the cavity body to exchange heat with the cavity. A temperature measuring device is installed on the cavity body to measure the temperature of the sidewall; A temperature control device is connected to the heat exchange device; the temperature control device can adjust the temperature of the heat exchange medium in the heat exchange device according to the temperature measured by the temperature measuring device.

2. The semiconductor reaction chamber according to claim 1, characterized in that, The heat exchange device includes a heat exchange pipeline for the flow of the heat exchange medium, and the side wall has a heat exchange cavity. The heat exchange piping is arranged around the periphery of the heat exchange cavity; and / or, The heat exchange pipeline is disposed at the top and / or bottom of the heat exchange chamber via the heat exchange cavity.

3. The semiconductor reaction chamber according to claim 2, characterized in that, The heat exchange chambers are located on the peripheral wall, top wall, and bottom wall of the cavity body, and the heat exchange pipes in at least two of the heat exchange chambers are connected by connecting pipes.

4. The semiconductor reaction chamber according to claim 2, characterized in that, The heat exchange pipeline includes a first connection port and a second connection port. The first connection port is connected to the inlet of the temperature control device, and the second connection port is connected to the outlet of the temperature control device.

5. The semiconductor reaction chamber according to claim 4, characterized in that, The temperature control device includes a heat exchanger having a first inlet, a first outlet, a second inlet, and a second outlet. The first inlet and the first outlet form the inlet and the outlet, and the heat exchanger includes a first pipeline and a second pipeline disposed adjacent to the first pipeline. The two ends of the first pipeline are respectively connected to the first inlet and the first outlet, and the two ends of the second pipeline are respectively connected to the second inlet and the second outlet.

6. The semiconductor reaction chamber according to claim 2, characterized in that, The temperature control device is multiple, and the multiple temperature control devices are connected to the heat exchange pipeline.

7. The semiconductor reaction chamber according to claim 1, characterized in that, The temperature measuring device is a plurality of such devices, which are spaced apart on the side wall of the cavity body.

8. The semiconductor reaction chamber according to claim 1, characterized in that, The temperature measuring device includes one of a thermocouple, a resistance temperature detector (RTD), and a thermistor.

9. The semiconductor reaction chamber according to any one of claims 1-8, characterized in that, The chamber contains a gas spray head and / or a platform.

10. A semiconductor reaction apparatus, characterized in that, The semiconductor reaction chamber includes any one of claims 1-9.

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