Semiconductor devices and electrical equipment

Abstract

This utility model discloses a semiconductor device and an electrical device. The semiconductor device has a first direction and a second direction perpendicular to each other. The semiconductor device includes a molding compound, a substrate, and a drive support. The drive pins include a plurality of long drive pins and a plurality of short drive pins spaced apart along the first direction. The length of the portion of the long drive pins outside the molding compound in the second direction is greater than the length of the portion of the short drive pins outside the molding compound in the second direction. The length of the portion of the rectifier pins outside the molding compound in the second direction is the same as the length of the portion of the long drive pins outside the molding compound in the second direction. Therefore, by setting the length of the portion of the rectifier pins outside the molding compound to be the same as the length of the portion of the long drive pins outside the molding compound, the current carrying capacity requirements of the AC input wiring L and N of the rectifier pads are met, and the safe distance between the AC input wiring L and N of the rectifier pads is also ensured.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a semiconductor device and electrical equipment. Background Technology

[0002] Currently, air conditioning control boards include independently packaged components such as rectifier bridges, PFC (Power Factor Correction), compressor IPM (Intelligent Power Module), and fan IPM. These discrete components occupy a large area on the control board and require multiple insertions during production.

[0003] The challenge lies in designing the rectifier pins appropriately so that the AC input wiring L and N of the rectifier bridge on the control board (e.g., printed circuit board, PCB) meets both the current carrying capacity requirements and the safety distance between the AC input wiring L and N of the rectifier bridge. Utility Model Content

[0004] This invention aims to at least solve one of the technical problems existing in the prior art. Therefore, one objective of this invention is to provide a semiconductor device that enables the AC input wirings L and N of the rectifier bridge on an electronic control board (e.g., a printed circuit board, PCB) to meet current carrying capacity requirements while ensuring that the AC input wirings L and N of the rectifier bridge meet safety regulations, thereby guaranteeing the safety of the semiconductor device.

[0005] This utility model further proposes an electrical device.

[0006] According to an embodiment of the present invention, a semiconductor device has a first direction and a second direction perpendicular to each other. The semiconductor device includes a molding compound, a substrate, and a drive support member. At least a portion of the substrate is disposed within the molding compound. The substrate includes a first inverter pad, a second inverter pad, and a rectifier pad spaced apart along the first direction. The first inverter pad is provided with a first inverter power chip, the second inverter pad is provided with a second inverter power chip, and the rectifier pad is provided with a rectifier chip. At least a portion of the drive support member is disposed within the molding compound. The drive support member includes a drive support body, a drive pin, and a rectifier pin. The drive support body is at least partially located on one side of the first inverter pad and the second inverter pad in the second direction. The drive support body is provided with a drive chip, which drives the first inverter power chip. The device comprises a chip and a second inverter power chip, wherein the drive pin is connected to the drive chip, and the rectifier pin is at least partially located on one side of the rectifier pad in the second direction and connected to the rectifier pad. The drive pin and the rectifier pin extend from the edge of the molding compound near the drive support member in the second direction to the outside of the molding compound and are spaced apart along the first direction. The drive pin includes a plurality of long drive pins and a plurality of short drive pins spaced apart along the first direction. The length of the portion of the long drive pin outside the molding compound in the second direction is greater than the length of the portion of the short drive pin outside the molding compound in the second direction. The length of the portion of the rectifier pin outside the molding compound in the second direction is the same as the length of the portion of the long drive pin outside the molding compound in the second direction.

[0007] Therefore, by setting the length of the portion of the rectifier pin outside the plastic package to be the same as the length of the portion of the drive pin outside the plastic package, the length of the rectifier pin in the second direction can be increased, so that the AC input wiring L and N meet the current carrying capacity requirements, and the safe distance between the AC input wiring L and N can be ensured to allow large current to pass through, thereby ensuring the safety of the semiconductor device.

[0008] In some examples of this utility model, there are at least two rectifier pins, which are spaced apart along a first direction, and the portions of the at least two rectifier pins located outside the plastic package have the same length in the second direction.

[0009] In some examples of this utility model, the semiconductor device further has a third direction, which is perpendicular to the first direction and the second direction; the molding compound has a first groove on the side of the second direction near the drive support member, the first groove is located between two adjacent rectifier pins, the first groove is recessed into the molding compound from the outer peripheral side of the molding compound on the side of the second direction closer to the drive support member, and the first groove penetrates the molding compound in the third direction.

[0010] In some examples of this utility model, the minimum spacing of two adjacent driving pins along the first direction is the same and is a1, and the spacing of two adjacent rectifier pins along the first direction is a2. a1 and a2 satisfy the relationship: a2≥5a1.

[0011] In some examples of this utility model, the width of the driving pin along the first direction is b1, and the width of the rectifier pin along the first direction is b2. b1 and b2 satisfy the relationship: b2≥2b1.

[0012] In some examples of this utility model, the semiconductor device further has a third direction, which is perpendicular to the first direction and the second direction; the molding compound has a second groove on the side of the second direction near the drive support member, the second groove is located between adjacent drive pins and rectifier pins, the second groove is recessed into the molding compound from the peripheral side of the molding compound on the side of the second direction closer to the drive support member, and the second groove penetrates the molding compound in the third direction.

[0013] In some examples of this utility model, the drive support body includes a first drive pad and a second drive pad spaced apart along the first direction. The first drive pad is at least partially located on one side of the first inverter pad in the second direction, and the second drive pad is at least partially located on one side of the second inverter pad in the second direction. The drive chip includes a first drive chip and a second drive chip. The first drive chip is disposed on the first drive pad, and the second drive chip is disposed on the second drive pad. The drive pins include a first drive pin and a second drive pin spaced apart along the first direction. The first drive pin and the first inverter power chip are respectively connected to the first drive chip, and the second drive pin and the second inverter power chip are respectively connected to the second drive chip.

[0014] In some examples of this utility model, the long driving pin and the short driving pin in the first driving pin are alternately distributed along the first direction; and / or the long driving pin and the short driving pin in the second driving pin are alternately distributed along the first direction.

[0015] In some examples of this utility model, the first drive pin includes a first pseudo-pin, the first pseudo-pin including a first pseudo-ground pin, the first pseudo-ground pin extending from the edge of the molding compound near the drive support member in the second direction to the outside of the molding compound, the length of the portion of the first pseudo-ground pin outside the molding compound in the second direction being less than the length of the portion of the short drive pin outside the molding compound in the second direction, the first drive pin having a first low-voltage pin region, the first pseudo-ground pin located in the first low-voltage pin region, and two first drive pins located on both sides of the first pseudo-ground pin and adjacent to the first pseudo-ground pin being the long drive pin; and / or the second drive pin includes a second pseudo-pin, the second pseudo-pin including a second pseudo-ground pin, the second pseudo-ground pin extending from the edge of the molding compound near the drive support member in the second direction to the outside of the molding compound, the length of the portion of the second pseudo-ground pin outside the molding compound in the second direction being less than the length of the portion of the short drive pin outside the molding compound in the second direction, the second drive pin having a second The low-voltage pin area includes the second pseudo-pin located in the second low-voltage pin area. Two second drive pins located on either side of the second pseudo-ground pin and adjacent to the second pseudo-ground pin are both long drive pins. The drive support also includes two third pseudo-pins, each including a third pseudo-ground pin and a first high-side gate drive supply voltage pseudo-pin. In the first direction, the two third pseudo-pins are distributed between and close to the adjacent first drive pin and second drive pin. In the first direction, the adjacent first drive pin and second drive pin are both short pins. The semiconductor device also has a third direction, which is perpendicular to both the first and second directions. The molding compound has a third groove on the side of the molding compound closer to the drive support in the second direction. The third groove is located between adjacent first drive pins and second drive pins. The third groove is recessed into the molding compound from the outer peripheral side of the molding compound on the side closer to the drive support in the second direction, and the third groove penetrates the molding compound in the third direction.

[0016] In some examples of this utility model, the substrate further includes a PFC power pad, which is disposed on one side of the first inverter pad and the second inverter pad in the first direction, and the PFC power pad is provided with a PFC power chip; the drive support body further includes a third drive pad, and the drive pin further includes a third drive pin, the third drive pad is at least partially located on one side of the PFC power pad in the second direction, the third drive pad is provided with a third drive chip, and the third drive chip is connected to the third drive pin and the PFC power chip respectively; wherein, the long drive pin and the short drive pin in the third drive pin are alternately distributed along the first direction.

[0017] In some examples of this utility model, the third driving pad and the second driving pad are arranged adjacent to each other in the first direction, and the driving support further includes two fourth pseudo-pins, which are connected to the second driving pad; in the first direction, the two fourth pseudo-pins are distributed between and close to the adjacent third driving pin and the second driving pin, and the two fourth pseudo-pins include a fourth pseudo-ground pin and a second high-side gate drive supply voltage pseudo-pin; and / or the semiconductor device further has a third direction, which is perpendicular to the first direction and the second direction, and the molding compound is close to the driving support in the second direction. A fourth groove is provided on one side of the support member. The fourth groove is located between adjacent third driving pins and second driving pins, or the fourth groove is located between adjacent third driving pins and first driving pins. The fourth groove is recessed into the molded body from the peripheral side of the molded body in the second direction, closer to the driving support member, and the fourth groove penetrates the molded body in the third direction. And / or the third driving pin includes a gate jumper pad pseudo-pin. One of the two third driving pins located on both sides of the gate jumper pad pseudo-pin and adjacent to the gate jumper pad pseudo-pin is the long driving pin and the other is the short driving pin.

[0018] In some examples of this utility model, in the first direction, one of the adjacent third driving pin and the second driving pin is the driving short pin and the other is the driving long pin; or in the first direction, one of the adjacent third driving pin and the first driving pin is the driving short pin and the other is the driving long pin.

[0019] In some examples of this utility model, the semiconductor device further has a third direction, which is perpendicular to the first direction and the second direction; the molding compound has a groove on the side of the second direction near the drive support member, the groove, the drive pin and the rectifier pin are distributed at intervals along the first direction, the groove is recessed into the molding compound from the side of the outer peripheral side of the molding compound closer to the drive support member in the second direction, and the groove penetrates the molding compound in the third direction, and the width of the groove increases from the middle to both ends in the third direction.

[0020] The electrical device according to an embodiment of the present invention includes: the semiconductor device described above.

[0021] Additional aspects and advantages of this invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0022] The above and / or additional aspects and advantages of this utility model will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 This is a schematic diagram of the first angle structure of a semiconductor device according to an embodiment of the present invention; Figure 2 This is a second-angle structural schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 3 This is a schematic diagram of the third angle structure of a semiconductor device according to an embodiment of the present invention; Figure 4 This is a schematic diagram of the fourth angle structure of a semiconductor device according to an embodiment of the present invention; Figure 5 This is a schematic diagram of the fifth angle structure of a semiconductor device according to an embodiment of the present invention; Figure 6 This is a sixth-angle structural schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 7 This is a partial structural diagram of a semiconductor device from a first angle according to an embodiment of the present invention; Figure 8 This is a partial structural diagram of a semiconductor device from a second angle according to an embodiment of the present invention; Figure 9 This is a partial structural diagram of a semiconductor device from a third angle according to an embodiment of the present invention; Figure 10 This is a schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 11 This is a partial first-angle schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 12 This is a partial second-angle schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 13 This is a schematic diagram of the AC wiring input of a semiconductor device according to an embodiment of the present invention.

[0023] Figure label: 100. Semiconductor devices; 1. Molded body; 101. First groove; 102. Second groove; 103. Third groove; 104. Fourth groove; 2. Substrate; 201. First inverter pad; 2011. First inverter power chip; 202, Second inverter pad; 2021, Second inverter power chip; 203, rectifier pad; 2031, rectifier chip; 204, PFC power pad; 2041, PFC power chip; 3. Drive support component; 301. Drive support body; 3011. Drive chip; 3012. First drive pad; 3013. Second drive pad; 3014. First drive chip; 3015. Second drive chip; 3016. Third drive pad; 3017. Third drive chip; 302, Driver pin; 3021, Long driver pin; 3022, Short driver pin; 3023, First driver pin; 3024, Second driver pin; 3025, First pseudo-ground pin; 3026, Second pseudo-ground pin; 3027, Third pseudo-ground pin; 3028, First high-side gate drive supply voltage pseudo-pin; 3029, Third driver pin; 3030, Fourth pseudo-ground pin; 3031, Second high-side gate drive supply voltage pseudo-pin; 3032, Gate jumper pad pseudo-pin; 304, Rectifier pin. Detailed Implementation

[0024] The embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. The embodiments of the present invention are described in detail below.

[0025] The following is for reference. Figures 1-13 A semiconductor device 100 according to an embodiment of the present invention is described, which is applied to electrical equipment, such as an outdoor unit of an air conditioner.

[0026] like Figures 1-13As shown, the semiconductor device 100 according to an embodiment of the present invention has a first direction and a second direction perpendicular to each other. The first direction is the left-right direction in the figure, and the second direction is the up-down direction in the figure. The semiconductor device 100 includes: a molding compound 1, a substrate 2, and a drive support member 3. At least a portion of the substrate 2 is disposed within the molding compound 1, that is, the substrate 2 can be completely encapsulated by the molding compound 1, or the substrate 2 can be partially encapsulated by the molding compound 1, and another portion can be exposed from the surface of the molding compound 1. At least a portion of the drive support member 3 is disposed within the molding compound 1. The drive support member 3 can be at least partially disposed within the molding compound 1, and partially protrude from the molding compound 1 to be electrically connected to external components. The molding compound 1 can protect the stability of the substrate 2 and the drive support member 3 in the semiconductor device 100 and provide electrical insulation from the outside, thereby ensuring the structural reliability of the semiconductor device 100.

[0027] Furthermore, the substrate 2 includes a first inverter pad 201 and a second inverter pad 202 that are spaced apart along a first direction, that is, the first inverter pad 201 and the second inverter pad 202 are arranged at intervals from left to right, which can ensure that the first inverter pad 201 and the second inverter pad 202 are relatively independently set on the substrate 2.

[0028] The first inverter pad 201 is equipped with a first inverter power chip 2011, and the second inverter pad 202 is equipped with a second inverter power chip 2021. This ensures that the first inverter power chip 2011 and the second inverter power chip 2021 operate independently, thereby guaranteeing the normal operation of the semiconductor device 100. For example, the first inverter pad 201 can be a fan power pad, and the second inverter pad 202 can be a compressor power pad.

[0029] For example, the first inverter pad 201 can be the first motor pad, the second inverter pad 202 can be the second motor pad, the first inverter power chip 2011 of the first motor pad is the first motor inverter chip, which can drive and control the first motor, and the second inverter power chip 2021 of the second motor pad is the second motor inverter chip, which can drive and control the second motor.

[0030] Alternatively, the first inverter pad 201 can be a motor pad, and the second inverter pad 202 can be a compressor pad. The first inverter power chip 2011 of the motor pad is a motor inverter chip that can drive and control the motor, and the second inverter power chip 2021 of the compressor pad is a compressor inverter chip that can drive and control the compressor.

[0031] Alternatively, the first inverter pad 201 can be a motor pad, and the second inverter pad 202 can be a fan pad. The first inverter power chip 2011 of the motor pad is a motor inverter chip that can drive and control the motor, and the second inverter power chip 2021 of the fan pad is a fan inverter chip that can drive and control the fan.

[0032] Alternatively, the first inverter pad 201 can be the first fan pad, the second inverter pad 202 can be the second fan pad, the first inverter power chip 2011 of the first fan pad is the first fan inverter chip, which can drive and control the first fan, and the second inverter power chip 2021 of the second fan pad is the second fan inverter chip, which can drive and control the second fan.

[0033] Multiple first inverter power chips can be mounted on the first inverter pad 201. These chips form an inverter circuit, such as a three-phase inverter bridge circuit composed of six chips. The three-phase inverter bridge circuit includes three-phase upper arm inverter power chips and three-phase lower arm inverter power chips. The inverter power chips can be composed of insulated-gate bipolar transistors (IGBTs) and freewheeling diodes (FRDs), or they can be metal-oxide-semiconductor field-effect transistors (MOS transistors), or they can be RC-IGBTs (reverse-conducting IGBTs that integrate the IGBT and freewheeling diode onto a single chip). Multiple second inverter power chips can be mounted on the second inverter pad 202. These chips form an inverter circuit, such as a three-phase inverter bridge circuit composed of six chips. The three-phase inverter bridge circuit also includes three-phase upper arm inverter power chips and three-phase lower arm inverter power chips. The inverter power chip can be composed of an insulated gate bipolar transistor (IGBT) and a freewheeling diode (FRD), or it can be a metal-oxide-semiconductor field-effect transistor (MOS), or it can be an RC-IGBT (a reverse-conducting IGBT that integrates the IGBT and the freewheeling diode into a single chip).

[0034] The substrate 2 also includes a rectifier pad 203, which is disposed on one side of the first inverter pad 201 and the second inverter pad 202 in a first direction, and the rectifier pad 203 is provided with a rectifier chip 2031.

[0035] Specifically, the rectifier pad 203 can be located to the right of the first inverter pad 201 and the second inverter pad 202, that is, the first inverter pad 201, the second inverter pad 202 and the rectifier pad 203 are arranged at intervals in the left and right direction. This not only facilitates the relative independence of the first inverter pad 201, the second inverter pad 202 and the rectifier pad 203, but also ensures that the first inverter pad 201, the second inverter pad 202 and the rectifier pad 203 work independently.

[0036] Multiple rectifier chips 2031 can be set on the rectifier pad 203. The rectifier chip 2031 can be a rectifier diode. Multiple rectifier diodes form a rectifier bridge. For example, it can be implemented by combining four rectifier diodes arranged at intervals. The rectifier bridge circuit composed of four rectifier diodes converts the input AC power into DC power and outputs it.

[0037] The drive support 3 includes a drive support body 301, a drive pin 302 and a rectifier pin 304. The drive support body 301 is located at least partially on one side of the first inverter pad 201 and the second inverter pad 202 in a second direction.

[0038] Specifically, a portion of the drive support body 301 is located above the first inverter pad 201 and the second inverter pad 202, or the entire drive support body 301 is located above the first inverter pad 201 and the second inverter pad 202. This allows the drive support body 301 to be relatively independent from the first inverter pad 201 and the second inverter pad 202, while also ensuring that the drive support body 301, the first inverter pad 201, and the second inverter pad 202 operate independently, and also facilitates the electrical connection between the drive support body 301 and the substrate 2.

[0039] The drive support body 301 is equipped with a drive chip 3011, which drives the first inverter power chip 2011 and the second inverter power chip 2021. The drive pin 302 is connected to the drive chip 3011, so that the drive chip 3011 can be connected to the drive pin 302, the first inverter power chip 2011 and the second inverter power chip 2021 respectively. This allows current to pass through the drive pin 302, the drive chip 3011, the first inverter power chip 2011 and the second inverter power chip 2021, thereby ensuring the normal operation of the drive pin 302, the drive chip 3011, the first inverter power chip 2011 and the second inverter power chip 2021.

[0040] For example, the drive support body 301 can be a PCB (printed circuit board), on which a drive chip 3011 is provided. The drive pin 302 is connected to the PCB. The drive pin 302 can be connected to the PCB by wires or directly soldered to the PCB to achieve electrical connection with the drive chip. The rectifier pin 304 can be directly connected to the substrate.

[0041] The drive support body 301 can be a drive support frame body, and a drive chip 3011 is set on the drive support frame body. The material of the drive support frame body can be the same as the material of the drive pin 302 and the rectifier pin 304. The drive support frame body, the drive pin 302 and the rectifier pin 304 can be formed by an integrally molded copper frame or a frame of other integrally molded conductive material during manufacturing.

[0042] The drive support 3 can be completely spaced apart from the substrate 2 in the second direction, thereby reducing the impact of heat transferred from the substrate on the drive chip 3011; the drive support 3 can also be partially protruding in the second direction to form a connecting rod and connect with the substrate 2, thereby improving the stability of the substrate 2. At the same time, most of the drive support 3 is spaced apart from the substrate 2 in the second direction, thereby balancing the improvement of the stability of the substrate 2 and the reduction of the impact of heat transferred from the substrate on the drive chip 3011.

[0043] The rectifier pin 304 is at least partially located on one side of the rectifier pad 203 in the second direction, and the rectifier pin 304 is connected to the rectifier pad 203. The drive pin 302 and the rectifier pin 304 extend from the edge of the molding compound 1 in the second direction near the drive support 3 to the outside of the molding compound 1, and the drive pin 302 and the rectifier pin 304 are spaced apart along the first direction.

[0044] Specifically, a portion of the rectifier pin 304 is located on the upper side of the rectifier pad 203, or all of the rectifier pin 304 is located on the upper side of the rectifier pad 203. This allows the rectifier pin 304 and the rectifier pad 203 to be relatively independent, while also ensuring that the rectifier pin 304 and the rectifier pad 203 work independently. Moreover, the rectifier pin 304 and the rectifier pad 203 are electrically connected, thereby ensuring the normal operation of the rectifier pin 304 and the rectifier pad 203.

[0045] The drive pin 302 and rectifier pin 304 extend along the second direction, facilitating electrical connection between the drive pin 302 and the drive chip 3011, and electrical connection between the rectifier pin 304 and the rectifier pad 203. Furthermore, the drive pin 302 and rectifier pin 304 extend from the side of the drive support 3 away from the substrate 2 to outside the molding compound 1, allowing the drive chip 3011 to connect to external circuits via the drive pin 302, and the rectifier chip 2031 to connect to external circuits via the rectifier pin 304. The drive pin 302 and rectifier pin 304 are spaced apart in the left-right direction, allowing them to operate independently and ensuring their performance. For example... Figure 10 This is a schematic diagram of a semiconductor device 100 with unbent pins.

[0046] The driving pin 302 includes a plurality of long driving pins 3021 and a plurality of short driving pins 3022 spaced apart along a first direction. The length of the portion of the long driving pin 3021 located outside the molded body 1 in the second direction is greater than the length of the portion of the short driving pin 3022 located outside the molded body 1 in the second direction. The length of the portion of the rectifier pin 304 located outside the molded body 1 in the second direction is the same as the length of the portion of the long driving pin 3021 located outside the molded body 1 in the second direction.

[0047] It is understandable that multiple long drive pins 3021 and multiple short drive pins 3022 can be arranged alternately in the left and right directions. The length of the long drive pins 3021 extending out of the plastic package 1 is greater than the length of the short drive pins 3022 extending out of the plastic package 1. This can avoid short circuits between two adjacent copper contacts on the PCB board connected to the outside due to the small spacing between two adjacent pins, thereby reducing the width of the drive pins 302 in the left and right directions. This allows for a compact design of the drive pins 302, which in turn makes the semiconductor device 100 smaller.

[0048] The length of the rectifier pin 304 extending outside the plastic package 1 is the same as the length of the drive pin 3021 extending outside the plastic package 1. For example... Figure 13 For example, AC input wiring N and AC input wiring L on the external PCB are connected to two rectifier pins 304 respectively. AC input wiring N must meet safety regulations regarding distances to both AC input wiring L and the corresponding openings on the PCB at the screw holes of the semiconductor device. This limits the width of AC input wiring N, thus restricting its current-carrying capacity. When the length of the rectifier pin 304 in the second direction is longer, it means that the width of AC input wiring N can be further increased while still meeting safety regulations. This not only ensures that AC input wirings L and N meet current-carrying capacity requirements but also guarantees the safe distance between them, allowing for the passage of large currents, ensuring the performance and function of the semiconductor device 100, guaranteeing the current-carrying capacity of the rectifier pin 304, and reducing the risk of current leakage.

[0049] Therefore, by setting the length of the portion of the rectifier pin 304 outside the plastic package 1 to be the same as the length of the portion of the drive pin 3021 outside the plastic package 1, the length of the rectifier pin 304 in the second direction can be increased, which satisfies the current carrying capacity requirements of the AC input wiring L and N, and also ensures the safe distance between the AC input wiring L and N to allow the passage of large currents, thereby ensuring the safety of the semiconductor device 100.

[0050] In addition, such as Figure 7As shown, there are at least two rectifier pins 304, which are spaced apart along a first direction, and the portions of the at least two rectifier pins 304 located outside the molding compound 1 have the same length in a second direction.

[0051] Specifically, there are two or more rectifier pins 304. This ensures that the rectifier pins 304 can control the current direction, guarantee voltage conversion, and provide a heat dissipation path. Moreover, at least two rectifier pins 304 are arranged at intervals in the left-right direction, so that each rectifier pin 304 can work independently, thereby ensuring the performance of the rectifier pins 304. The portions of at least two rectifier pins 304 extending out of the plastic package 1 have the same vertical length, which maintains the integration of the rectifier pins 304 and ensures the uniformity of the performance of the rectifier pins 304. This ensures the safe distance between the rectifier pins 304, meets the requirements for the passage of large currents, guarantees the performance and function of the semiconductor device 100, guarantees the current carrying capacity of the rectifier pins 304, and reduces the risk of current leakage.

[0052] In addition, such as Figure 3 , Figure 5 and Figure 7 As shown, the semiconductor device 100 also has a third direction, which is perpendicular to the first direction and the second direction. The molding compound 1 has a first groove 101 on the side of the second direction near the drive support 3. The first groove 101 is located between two adjacent rectifier pins 304. The first groove 101 is recessed into the molding compound 1 from the side of the outer peripheral side of the molding compound 1 that is closer to the drive support 3 in the second direction. Moreover, the first groove 101 penetrates the molding compound 1 in the third direction.

[0053] Specifically, the first direction is the left-right direction in the figure, the second direction is the up-down direction in the figure, and the third direction is the thickness direction of the molding compound 1. The first groove 101 is provided on the upper and lower sides of the molding compound 1 near the drive support 3, that is, the first groove 101 is provided on the upper side of the molding compound 1. The first groove 101 is located between the left and right adjacent rectifier pins 304. This can increase the gap distance between two adjacent rectifier pins 304, thereby ensuring the insulation effect between the left and right adjacent rectifier pins 304, and thus improving the stability of the rectifier pins 304.

[0054] The recessed portion of the first groove 101 is far from the end of the drive support 3, that is, the first groove 101 is recessed downwards. This allows the first groove 101 to not occupy the space of the rectifier pin 304, thereby optimizing the layout of the rectifier pin 304. Moreover, the first groove 101 penetrates the molded body 1 along the thickness direction of the molded body 1, which ensures that the gap distance between the rectifier pins 304 is the same, thereby further ensuring the insulation effect between the rectifier pins 304 and improving the stability of the rectifier pins 304.

[0055] Optionally, such as Figure 7 As shown, the minimum spacing of two adjacent drive pins 302 along the first direction is the same and is a1, and the spacing of two adjacent rectifier pins 304 along the first direction is a2. a1 and a2 satisfy the relationship: a2≥5a1.

[0056] Specifically, the distance between the two nearest adjacent drive pins 302 is equal, which ensures that the drive pins 302 can stably control or activate the drive chip 3011. The ratio between the minimum spacing of two adjacent drive pins 302 along the first direction and the spacing of two adjacent rectifier pins 304 along the first direction should be within a reasonable range. If the minimum spacing of two adjacent rectifier pins 304 along the first direction is less than five times the spacing of two adjacent drive pins 302 along the first direction, the distance between the rectifier pins 304 will be too small, and the length of the first groove 101 in the left and right directions will also be too small, thus failing to guarantee the insulation effect between adjacent rectifier pins 304, thereby affecting the stability of the rectifier pins 304. If the ratio between the minimum spacing of two adjacent drive pins 302 along the first direction and the spacing of two adjacent rectifier pins 304 along the first direction is within a reasonable range, not only can the insulation effect between the rectifier pins 304 be guaranteed, but the spatial layout of the rectifier pins 304 and drive pins 302 can also be optimized, thereby ensuring the stability of the rectifier pins 304 and drive pins 302.

[0057] Optionally, such as Figure 3 As shown, the width of the driving pin 302 along the first direction is b1, and the width of the rectifier pin 304 along the first direction is b2. b1 and b2 satisfy the relationship: b2≥2b1.

[0058] Specifically, the ratio between the width of the driving pin 302 along the first direction and the width of the rectifier pin 304 along the first direction must be within a reasonable range. If the width of the rectifier pin 304 along the first direction is less than twice the width of the driving pin 302 along the first direction, the width of the rectifier pin 304 will be too small, which will not be able to meet the requirements of large current passage and will not be able to guarantee the performance and function of the semiconductor device 100. This will also prevent the current carrying capacity of the rectifier pin 304 from being guaranteed and increase the risk of current leakage. If the ratio between the width of the driving pin 302 along the first direction and the width of the rectifier pin 304 along the first direction is within a reasonable range, it will not only ensure the normal operation of the driving pin 302 and the rectifier pin 304, but also guarantee the current carrying capacity of the rectifier pin 304, thereby reducing the risk of current leakage and ensuring the safety of the semiconductor device 100.

[0059] In addition, such as Figure 3 , Figure 5 and Figure 7 As shown, the molding compound 1 has a second groove 102 on the side of the drive support member 3 in the second direction. The second groove 102 is located between the adjacent drive pin 302 and rectifier pin 304. The second groove 102 is recessed into the molding compound 1 from the side of the outer peripheral side of the molding compound 1 that is closer to the drive support member 3 in the second direction, and the second groove 102 penetrates the molding compound 1 in the third direction.

[0060] Specifically, a second groove 102 is provided on the upper and lower sides of the molding compound 1 near the drive support 3, that is, a second groove 102 is provided on the upper side of the molding compound 1. The second groove 102 is located between the left and right adjacent drive pins 302 and rectifier pins 304, that is, between the rightmost drive pin 302 and the leftmost rectifier pin 304. This can increase the gap distance between the left and right adjacent drive pins 302 and rectifier pins 304, thereby ensuring the insulation effect between the left and right adjacent drive pins 302 and rectifier pins 304, and thus improving the stability of the drive pins 302 and rectifier pins 304.

[0061] The recessed portion of the second groove 102 is far from the end of the drive support 3, that is, the second groove 102 is recessed downwards. This allows the second groove 102 to not occupy the space of the drive pin 302 and the rectifier pin 304, thereby optimizing the layout of the drive pin 302 and the rectifier pin 304. Moreover, the second groove 102 penetrates the molded body 1 along the thickness direction of the molded body 1, which ensures that the gap distance between adjacent drive pins 302 and rectifier pins 304 is the same, thereby further ensuring the insulation effect between adjacent drive pins 302 and rectifier pins 304, and thus improving the stability of the drive pins 302 and rectifier pins 304.

[0062] In addition, such as Figure 10-12 As shown, the drive support body 301 includes a first drive pad 3012 and a second drive pad 3013 spaced apart along a first direction. The first drive pad 3012 is at least partially located on one side of the first inverter pad 201 in a second direction, and the second drive pad 3013 is at least partially located on one side of the second inverter pad 202 in a second direction. The drive chip 3011 includes a first drive chip 3014 and a second drive chip 3015. The first drive chip 3014 is disposed on the first drive pad 3012, and the second drive chip 3015 is disposed on the second drive pad 3013. The drive pin 302 includes a first drive pin 3023 and a second drive pin 3024 spaced apart along a first direction. The first drive pin 3023 and the first inverter power chip 2011 are respectively connected to the first drive chip 3014, and the second drive pin 3024 and the second inverter power chip 2021 are respectively connected to the second drive chip 3015.

[0063] Specifically, a first driver chip 3014 is disposed on the first driver pad 3012, and a second driver chip 3015 is disposed on the second driver pad 3013. The first driver chip 3014 is electrically connected to the first driver pin 3023 and the first inverter power chip 2011, so that the first driver chip 3014 can drive the first driver pin 3023 and the first inverter power chip 2011 respectively, thereby electrically connecting the first inverter pad 201 and the first driver pad 3012. The second driver chip 3015 is electrically connected to the second driver pin 3024 and the second inverter power chip 2021, so that the second driver chip 3015 can drive the second driver pin 3024 and the second inverter power chip 2021 respectively, thereby electrically connecting the second inverter pad 202 and the second driver pad 3013.

[0064] The first driving pad 3012 includes a first high-voltage driving pad and a first low-voltage driving pad that are spaced apart along a first direction. The first driving chip 3014 includes a first high-voltage driving chip and a first low-voltage driving chip. The first high-voltage driving pad is provided with the first high-voltage driving chip, and the first low-voltage driving pad is provided with the first low-voltage driving chip.

[0065] Specifically, the first high-voltage drive pad and the first low-voltage drive pad are arranged alternately in the left-right direction. The first high-voltage drive chip is set on the first high-voltage drive pad, and the first low-voltage drive chip is set on the first low-voltage drive pad. This can ensure the relative independence of the first high-voltage drive pad and the first low-voltage drive pad and their respective operation, and can also ensure the separate operation of high voltage and low voltage, thereby improving the intelligence of the semiconductor device 100.

[0066] The second driving pad 3013 includes a second high-voltage driving pad and a second low-voltage driving pad that are spaced apart along a first direction. The second driving chip 3015 includes a second high-voltage driving chip and a second low-voltage driving chip. The second high-voltage driving pad is provided with the second high-voltage driving chip, and the second low-voltage driving pad is provided with the second low-voltage driving chip.

[0067] Specifically, the second high-voltage drive pad and the second low-voltage drive pad are arranged alternately in the left-right direction, and the second high-voltage drive chip is set on the second high-voltage drive pad. This ensures that the second high-voltage drive pad and the second low-voltage drive pad are relatively independent and can work independently, and also ensures that the high voltage and low voltage operate separately, thereby improving the intelligence of the semiconductor device 100.

[0068] In addition, such as Figure 8 As shown, the long driving pin 3021 and the short driving pin 3022 in the first driving pin 3023 are alternately distributed along the first direction, and the long driving pin 3021 and the short driving pin 3022 in the second driving pin 3024 are alternately distributed along the first direction.

[0069] Specifically, the long driving pin 3021 and the short driving pin 3022 in the first driving pin 3023 are arranged alternately in the left and right direction. That is, the long driving pin 3021 is flanked by short driving pins 3022 on both sides, and the short driving pin 3022 is flanked by long driving pins 3021 on both sides. This ensures that the long driving pin 3021 and the short driving pin 3022 can operate independently and normally. The long driving pin 3021, the short driving pin 3022 and the rectifier pin 304 extend outside the plastic package 1, which facilitates the current to enter the substrate 2 through the long driving pin 3021, the short driving pin 3022 and the rectifier pin 304. This ensures that the long driving pin 3021 and the short driving pin 3022 in the first driving pin 3023 can receive different currents.

[0070] Similarly, the long drive pin 3021 and the short drive pin 3022 in the second drive pin 3024 are arranged alternately in the left and right direction. That is, the long drive pin 3021 is flanked by short drive pins 3022 on both sides, and the short drive pin 3022 is flanked by long drive pins 3021 on both sides. This ensures that the long drive pin 3021 and the short drive pin 3022 can operate independently and normally. The long drive pin 3021, the short drive pin 3022 and the rectifier pin 304 extend outside the plastic package 1, which facilitates the current to enter the substrate 2 through the long drive pin 3021, the short drive pin 3022 and the rectifier pin 304. This ensures that the long drive pin 3021 and the short drive pin 3022 in the first drive pin 3023 receive different currents.

[0071] Among them, such as Figure 8 As shown, the first drive pin 3023 includes a first pseudo pin, which includes a first pseudo ground pin 3025. The first pseudo ground pin 3025 extends from the edge of the molding compound 1 near the drive support member 3 in the second direction to the outside of the molding compound 1. The length of the portion of the first pseudo ground pin 3025 outside the molding compound 1 in the second direction is less than the length of the portion of the drive short pin 3022 outside the molding compound 1 in the second direction. The first drive pin 3023 has a first low-voltage pin area. The first pseudo ground pin 3025 is located in the first low-voltage pin area. The two first drive pins 3023 located on both sides of the first pseudo ground pin 3025 and adjacent to the first pseudo ground pin 3025 are both drive long pins 3021.

[0072] Specifically, the first pseudo-ground pin 3025 protrudes from the upper edge of the molded body 1 in the second direction, and the length of the first pseudo-ground pin 3025 extending out of the molded body 1 is less than the length of the short drive pin 3022 extending out of the molded body 1. This ensures that the first pseudo-ground pin 3025 does not play a practical role in electrical connection, thereby supporting the drive chip 3011, drive support 3 and substrate 2, and making the drive chip 3011, drive support 3 and substrate 2 more stable.

[0073] The first pseudo-ground pin 3025 is located in the first low-voltage pin area, which is used for the pin partitioning of low-voltage (e.g., 12V logic power supply) and low-current signal transmission. The left and right sides of the first pseudo-ground pin 3025 are both drive long pins 3021. This allows the first pseudo-ground pin 3025 to support the first drive pins 3023 on the left and right sides, and also ensures the normal operation of the first drive pins 3023, thereby ensuring the stability of the first drive pins 3023.

[0074] In addition, such as Figure 8 As shown, the second drive pin 3024 includes a second pseudo pin, which includes a second pseudo ground pin 3026. The second pseudo ground pin 3026 extends from the edge of the molding compound 1 near the drive support member 3 in the second direction to the outside of the molding compound 1. The length of the portion of the second pseudo ground pin 3026 outside the molding compound 1 in the second direction is less than the length of the portion of the drive short pin 3022 outside the molding compound 1 in the second direction. The second drive pin 3024 has a second low-voltage pin area. The second pseudo pin is located in the second low-voltage pin area. The two second drive pins 3024 located on both sides of the second pseudo ground pin 3026 and adjacent to the second pseudo ground pin 3026 are both drive long pins 3021.

[0075] Specifically, the second pseudo-ground pin 3026 protrudes from the upper edge of the molded body 1 in the second direction, and the length of the second pseudo-ground pin 3026 extending out of the molded body 1 is less than the length of the drive short pin 3022 extending out of the molded body 1. This ensures that the second pseudo-ground pin 3026 does not play a practical role in electrical connection, thereby supporting the drive chip 3011, drive support 3 and substrate 2, and making the drive chip 3011, drive support 3 and substrate 2 more stable.

[0076] The second pseudo-ground pin 3026 is located in the second low-voltage pin area, which is used for pin partitioning of low-voltage (e.g., 12V logic power supply) and low-current signal transmission. The left and right sides of the second pseudo-ground pin 3026 are both drive long pins 3021. This allows the second pseudo-ground pin 3026 to support the second drive pins 3024 on the left and right sides, and also ensures the normal operation of the second drive pins 3024, thereby ensuring the stability of the second drive pins 3024.

[0077] In addition, such as Figure 8 As shown, the drive support 3 also includes two third pseudo pins, which include a third pseudo ground pin 3027 and a first high-side gate drive power supply voltage pseudo pin 3028. In the first direction, the two third pseudo pins are distributed between the adjacent first drive pin 3023 and the second drive pin 3024 and are close to the second drive pin 3024.

[0078] Specifically, the third pseudo-ground pin 3027 and the first high-side gate drive power supply voltage pseudo-pin 3028 are located between the left and right adjacent first drive pins 3023 and second drive pins 3024. This allows the third pseudo-ground pin 3027 to provide structural support for the left and right adjacent first drive pins 3023 and second drive pins 3024, and also allows the first high-side gate drive power supply voltage pseudo-pin 3028 to provide high-voltage support for the left and right adjacent first drive pins 3023 and second drive pins 3024. Furthermore, the third pseudo-ground pin 3027 and the first high-side gate drive power supply voltage pseudo-pin 3028 are close to the second drive pin 3024, which optimizes the layout of the drive pin 302 and ensures the normal operation and stability of the drive pin 302.

[0079] In particular, such as Figure 8 and Figure 10As shown, in the first direction, the adjacent first drive pin 3023 and second drive pin 3024 are both drive short pins 3022. The length of the third pseudo ground pin 3027 and the first high-side gate drive power supply voltage pseudo pin 3028 extending out of the plastic package 1 is less than the length of the drive short pin 3022. This facilitates the third pseudo ground pin 3027 and the first high-side gate drive power supply voltage pseudo pin 3028 to provide support for the adjacent first drive pin 3023 and second drive pin 3024, and can also optimize the structural layout of the adjacent first drive pin 3023 and second drive pin 3024.

[0080] In addition, such as Figure 3 , Figure 5 and Figure 8 As shown, the molding compound 1 has a third groove 103 on the side of the drive support member 3 in the second direction. The third groove 103 is located between the adjacent first drive pin 3023 and second drive pin 3024. The third groove 103 is recessed into the molding compound 1 from the side of the outer peripheral side of the molding compound 1 that is closer to the drive support member 3 in the second direction, and the third groove 103 penetrates the molding compound 1 in the third direction.

[0081] Specifically, a third groove 103 is provided on the upper and lower sides of the molding compound 1 near the drive support 3, that is, a third groove 103 is provided on the upper side of the molding compound 1. The third groove 103 is located between the first drive pin 3023 and the second drive pin 3024 that are adjacent to each other on the left and right. This can increase the gap distance between the first drive pin 3023 and the second drive pin 3024 that are adjacent to each other on the left and right, thereby ensuring the insulation effect between the first drive pin 3023 and the second drive pin 3024 that are adjacent to each other on the left and right, and thus improving the stability of the first drive pin 3023 and the second drive pin 3024.

[0082] The recessed portion of the third groove 103 is far from the end of the drive support 3, that is, the third groove 103 is recessed downwards. This allows the third groove 103 to not occupy the space of the first drive pin 3023 and the second drive pin 3024, thereby optimizing the layout of the first drive pin 3023 and the second drive pin 3024. Moreover, the third groove 103 penetrates the molded body 1 along the thickness direction of the molded body 1, which ensures that the gap distance between the left and right adjacent first drive pins 3023 and the second drive pins 3024 is the same, thereby further ensuring the insulation effect between the left and right adjacent first drive pins 3023 and the second drive pins 3024, and thus improving the stability of the first drive pins 3023 and the second drive pins 3024.

[0083] In addition, such as Figure 9 and Figure 11As shown, the substrate 2 also includes a PFC power pad 204, which is disposed on one side of the first inverter pad 201 and the second inverter pad 202 in a first direction, and a PFC power chip 2041 is disposed on the PFC power pad 204.

[0084] Specifically, the PFC power pad 204 is located on one side of the first inverter pad 201 and the second inverter pad 202 in the left-right direction. That is, the first inverter pad 201, the second inverter pad 202 and the PFC power pad 204 are arranged sequentially and alternately in the left-right direction, which can ensure the relative independence of the first inverter pad 201, the second inverter pad 202 and the PFC power pad 204 and their respective operation. The PFC power pad 204 is provided with a PFC power chip 2041, which facilitates the operation and shutdown of the PFC power pad 204.

[0085] PFC power pad 204 is equipped with a PFC power chip and a PFC diode. The PFC power chip and PFC diode are components of the PFC circuit, which adjusts the power factor of DC power and outputs the adjusted DC power. The PFC power chip can be composed of an insulated gate bipolar transistor (IGBT) and a freewheeling diode (FRD), or it can be a metal-oxide-semiconductor field-effect transistor (MOS), or it can be an RC-IGBT (a reverse-conducting IGBT that integrates the IGBT and freewheeling diode into a single chip).

[0086] The drive support body 301 also includes a third drive pad 3016, and the drive pin 302 also includes a third drive pin 3029. The third drive pad 3016 is at least partially located on one side of the PFC power pad 204 in the second direction. The third drive pad 3016 is provided with a third drive chip 3017, and the third drive chip 3017 is connected to the third drive pin 3029 and the PFC power chip 2041 respectively.

[0087] Specifically, a portion of the third driver pad 3016 is located above the PFC power pad 204, or all of the third driver pad 3016 is located above the PFC power pad 204. This allows the third driver pad 3016 and the PFC power pad 204 to be relatively independent, and also ensures that the third driver pad 3016 and the PFC power pad 204 work independently. Furthermore, the third driver chip 3017 is electrically connected to the third driver pin 3029 and the PFC power chip 2041 respectively, thereby ensuring the normal operation of the third driver pad 3016 and the PFC power pad 204.

[0088] Among them, the long driving pin 3021 and the short driving pin 3022 in the third driving pin 3029 are alternately distributed along the first direction, and the long driving pin 3021 and the short driving pin 3022 in the third driving pin 3029 are alternately arranged in the left and right directions. That is, the long driving pin 3021 is flanked by short driving pins 3022 on both sides, and the short driving pin 3022 is flanked by long driving pins 3021 on both sides. This can ensure that the long driving pin 3021 and the short driving pin 3022 are independent and work normally.

[0089] In addition, such as Figure 9 and Figure 11 As shown, the third driving pad 3016 and the second driving pad 3013 are arranged adjacent to each other in the first direction. The driving support 3 also includes two fourth pseudo-pins, which are connected to the second driving pad 3013. In the first direction, the two fourth pseudo-pins are distributed between the adjacent third driving pin 3029 and the second driving pin 3024 and are close to the third driving pin 3029. The two fourth pseudo-pins include a fourth pseudo-ground pin 3030 and a second high-side gate drive power supply voltage pseudo-pin 3031.

[0090] Specifically, the fourth pseudo-ground pin 3030 and the second high-side gate drive power supply voltage pseudo-pin 3031 are located between the left and right adjacent third drive pins 3029 and 3024. This allows the fourth pseudo-ground pin 3030 to provide structural support between the left and right adjacent third drive pins 3029 and 3024, and also allows the second high-side gate drive power supply voltage pseudo-pin 3031 to provide high-voltage support between the left and right adjacent third drive pins 3029 and 3024. Furthermore, the fourth pseudo-ground pin 3030 and the second high-side gate drive power supply voltage pseudo-pin 3031 are close to the third drive pin 3029, which optimizes the layout of the drive pin 302 and ensures the normal operation and stability of the drive pin 302.

[0091] In particular, such as Figure 9 As shown, in the first direction, one of the adjacent third drive pin 3029 and the second drive pin 3024 is a drive short pin 3022 and the other is a drive long pin 3021; ​​or in the first direction, one of the adjacent third drive pin 3029 and the first drive pin 3023 is a drive short pin 3022 and the other is a drive long pin 3021.

[0092] Specifically, among the adjacent third drive pins 3029 and second drive pins 3024 in the left-right direction, the one closest to each other is the short drive pin 3022 and the other is the long drive pin 3021. This not only optimizes the layout of the drive pins 302, but also facilitates the current to enter the substrate 2 through the long drive pin 3021 and the short drive pin 3022. This ensures that the long drive pin 3021 and the short drive pin 3022 in the adjacent third drive pins 3029 and second drive pins 3024 receive different currents.

[0093] In addition, such as Figure 3 , Figure 5 and Figure 9 As shown, the molding compound 1 has a fourth groove 104 on the side of the drive support member 3 in the second direction. The fourth groove 104 is located between the adjacent third drive pin 3029 and the second drive pin 3024, or the fourth groove 104 is located between the adjacent third drive pin 3029 and the first drive pin 3023. The fourth groove 104 is recessed into the molding compound 1 from the side of the outer peripheral side of the molding compound 1 that is closer to the drive support member 3 in the second direction, and the fourth groove 104 penetrates the molding compound 1 in the third direction.

[0094] Specifically, a fourth groove 104 is provided on the upper and lower sides of the molding compound 1 near the drive support 3, that is, a fourth groove 104 is provided on the upper side of the molding compound 1. The fourth groove 104 is located between the left and right adjacent third drive pins 3029 and second drive pins 3024. This can increase the gap distance between the left and right adjacent third drive pins 3029 and second drive pins 3024, thereby ensuring the insulation effect between the left and right adjacent third drive pins 3029 and second drive pins 3024, and thus improving the stability of the third drive pins 3029 and second drive pins 3024.

[0095] Alternatively, the fourth groove 104 can be located between the adjacent third driving pin 3029 and the first driving pin 3023, which can increase the gap between the adjacent third driving pin 3029 and the first driving pin 3023, thereby ensuring the insulation effect between the adjacent third driving pin 3029 and the first driving pin 3023, and thus improving the stability of the third driving pin 3029 and the first driving pin 3023.

[0096] The recessed portion of the fourth groove 104 is away from the end of the drive support 3, that is, the fourth groove 104 is recessed downwards. This allows the fourth groove 104 to not occupy the space between the third drive pin 3029 and the second drive pin 3024, or between the third drive pin 3029 and the first drive pin 3023, thereby optimizing the layout of the third drive pin 3029 and the second drive pin 3024, or between the third drive pin 3029 and the first drive pin 3023. Moreover, the fourth groove 104 penetrates the molding compound 1 along the thickness direction of the molding compound 1. This ensures that the gap distance between adjacent third drive pins 3029 and second drive pins 3024, or between third drive pin 3029 and first drive pin 3023, is the same. This further ensures the insulation effect between adjacent third drive pins 3029 and second drive pins 3024, or between third drive pin 3029 and first drive pin 3023, thereby improving the stability of third drive pins 3029 and second drive pins 3024, or between third drive pin 3029 and first drive pin 3023.

[0097] In addition, such as Figure 9 As shown, the third drive pin 3029 includes a gate jumper pad pseudo-pin 3032. One of the two third drive pins 3029 located on both sides of the gate jumper pad pseudo-pin 3032 and adjacent to the gate jumper pad pseudo-pin 3032 is a drive long pin 3021 and the other is a drive short pin 3022.

[0098] Specifically, the gate jumper pad pseudo-pin 3032 facilitates debugging and testing, and can also improve the reliability of the third drive pin 3029. One side of the gate jumper pad pseudo-pin 3032 is the long drive pin 3021, and the other side is the short drive pin 3022. This not only optimizes the layout of the drive pin 302, but also facilitates the current to enter the substrate 2 through the long drive pin 3021 and the short drive pin 3022, thereby ensuring that the adjacent third drive pins 3029 receive different currents.

[0099] In addition, such as Figure 3 , Figure 5 and Figures 7-9 As shown, the molding compound 1 has a groove on the side of the drive support member 3 in the second direction. The groove, drive pin 302 and rectifier pin 304 are distributed at intervals along the first direction. The groove is recessed into the molding compound 1 from the side of the outer peripheral side of the molding compound 1 that is closer to the drive support member 3 in the second direction. The groove penetrates the molding compound 1 in the third direction. The width of the groove increases from the middle to both ends in the third direction.

[0100] Specifically, grooves are provided on the upper and lower sides of the molding compound 1 near the drive support 3, that is, grooves are provided on the upper side of the molding compound 1. The grooves, drive pins 302 and rectifier pins 304 are distributed at intervals in the left and right direction. This can increase the gap distance between drive pins 302 and rectifier pins 304, thereby ensuring the insulation effect between the left and right drive pins 302 and rectifier pins 304, and thus improving the stability of drive pins 302 and rectifier pins 304.

[0101] The recessed portion of the groove is far from the end of the drive support 3, i.e., the groove is recessed downwards. This allows the groove to not occupy the space between the drive pin 302 and the rectifier pin 304, thereby optimizing the layout of the drive pin 302 and the rectifier pin 304. Moreover, the groove penetrates the molded body 1 along the thickness direction of the molded body 1, and the width increases from the middle to both ends in the third direction. This ensures that the gap distance between adjacent drive pins 302 and rectifier pins 304 is the same, thereby further ensuring the insulation effect between adjacent drive pins 302 and rectifier pins 304, and thus improving the stability of drive pins 302 and rectifier pins 304.

[0102] In some embodiments of this utility model, the substrate 2 may include pads and an insulating heat dissipation layer disposed below the pads. The insulating heat dissipation layer is mainly formed by sequentially stacking an insulating resin sheet and a copper layer, or by sequentially stacking an insulating resin sheet and an aluminum layer. The main material of the pads is copper or aluminum. In this case, most of the substrate 2 is encapsulated by the molding compound 1, and the outer surface of the copper layer or the outer surface of the aluminum layer in the insulating heat dissipation layer of the substrate 2 is exposed from the outer surface of the molding compound 1. Alternatively, the substrate 2 may include pads, an insulating layer, and a heat dissipation layer sequentially stacked. The main material of the pads is a copper layer or an aluminum layer, and the main material of the insulating layer is AlN, Al2O3, or Si3. The substrate 2 may consist of an N4 or a combination of several ceramic insulating layers, with the heat dissipation layer primarily made of copper or aluminum. In this case, the substrate 2 is mostly encapsulated by the molding compound 1, and the outer surface of the heat dissipation layer of the substrate 2 is exposed from the outer surface of the molding compound 1. Alternatively, the substrate 2 may include pads and a heat dissipation layer disposed below the pads, wherein the main material of the heat dissipation layer is an ALN ​​ceramic insulating layer, an AL2O3 ceramic insulating layer, or a Si3N4 ceramic insulating layer. In this case, the substrate 2 is mostly encapsulated by the molding compound 1, and the outer surface of the insulating layer of the substrate 2 is exposed from the outer surface of the molding compound 1. Alternatively, the substrate 2 may be formed solely of pads. In this case, the substrate 2 is disposed within the molding compound 1, and the molding compound 1 completely encapsulates the substrate 2. The specific structural form of the substrate 2 can be adjusted according to the specific requirements and application environment of the semiconductor device 100.

[0103] In some embodiments of this utility model, the first inverter pad 201, the second inverter pad 202, the PFC power pad 204, and the rectifier pad 203 are arranged sequentially in the first direction.

[0104] In some other embodiments of the present invention, the first inverter pad 201, the second inverter pad 202, the rectifier pad 203 and the PFC power pad 204 are arranged sequentially in the first direction.

[0105] The electrical device according to an embodiment of the present invention includes: the semiconductor device 100 of the above embodiment. By setting the length of the portion of the rectifier pin 304 outside the plastic package 1 to be the same as the length of the portion of the drive pin 3021 outside the plastic package 1, the length of the rectifier pin 304 in the second direction can be increased, which satisfies the current carrying capacity requirements of the AC input wiring L and N of the rectifier pad 203, and also ensures the safe distance between the AC input wiring L and N of the rectifier pad 203, allowing for the passage of large currents, thereby ensuring the safety of the semiconductor device 100.

[0106] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0107] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example.

[0108] Although embodiments of the present invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A semiconductor device, characterized by comprising: The semiconductor device has a first direction and a second direction perpendicular to each other, the semiconductor device comprising: Plastic encapsulation; A substrate, at least a portion of which is disposed within the molding compound, the substrate comprising a first inverter pad, a second inverter pad, and a rectifier pad spaced apart along the first direction, wherein the first inverter pad is provided with a first inverter power chip, the second inverter pad is provided with a second inverter power chip, and the rectifier pad is provided with a rectifier chip; A drive support is provided, at least partially disposed within the plastic package. The drive support includes a drive support body, drive pins, and rectifier pins. The drive support body is at least partially located on one side of the first inverter pad and the second inverter pad in the second direction. The drive support body is provided with a drive chip for driving the first inverter power chip and the second inverter power chip. The drive pins are connected to the drive chip. The rectifier pins are at least partially located on one side of the rectifier pad in the second direction and connected to the rectifier pad. The drive pins and the rectifier pins extend from the edge of the plastic package near the drive support in the second direction to the outside of the plastic package and are spaced apart along the first direction. The driving pins include a plurality of long driving pins and a plurality of short driving pins spaced apart along the first direction. The length of the portion of the long driving pin outside the molded package in the second direction is greater than the length of the portion of the short driving pin outside the molded package in the second direction. The length of the portion of the rectifier pin outside the molded package in the second direction is the same as the length of the portion of the long driving pin outside the molded package in the second direction.

2. The semiconductor device according to claim 1, wherein The rectifier pins are at least two, and the at least two rectifier pins are spaced apart along a first direction. The portions of the at least two rectifier pins located outside the plastic package have the same length in the second direction.

3. The semiconductor device according to claim 2, wherein The semiconductor device further has a third direction, which is perpendicular to the first direction and the second direction; The molding compound has a first groove on the side of the drive support member in the second direction. The first groove is located between two adjacent rectifier pins. The first groove is recessed into the molding compound from the outer peripheral side of the molding compound on the side of the drive support member in the second direction, and the first groove penetrates the molding compound in the third direction.

4. The semiconductor device according to claim 2, wherein The minimum spacing between two adjacent drive pins along the first direction is the same and is a1, and the spacing between two adjacent rectifier pins along the first direction is a2. a1 and a2 satisfy the relationship: a2≥5a1.

5. The semiconductor device according to claim 1, wherein The width of the driving pin along the first direction is b1, and the width of the rectifier pin along the first direction is b2. b1 and b2 satisfy the relationship: b2≥2b1.

6. The semiconductor device according to claim 1, wherein The semiconductor device further has a third direction, which is perpendicular to the first direction and the second direction; The molding compound has a second groove on the side of the drive support member in the second direction. The second groove is located between adjacent drive pins and rectifier pins. The second groove is recessed into the molding compound from the outer peripheral side of the molding compound on the side of the drive support member in the second direction, and the second groove penetrates the molding compound in the third direction.

7. The semiconductor device according to claim 1, characterized in that, The drive support body includes a first drive pad and a second drive pad spaced apart along the first direction. The first drive pad is at least partially located on one side of the first inverter pad in the second direction, and the second drive pad is at least partially located on one side of the second inverter pad in the second direction. The drive chip includes a first drive chip and a second drive chip. The first drive chip is disposed on the first drive pad, and the second drive chip is disposed on the second drive pad. The drive pins include a first drive pin and a second drive pin spaced apart along the first direction. The first drive pin and the first inverter power chip are respectively connected to the first drive chip, and the second drive pin and the second inverter power chip are respectively connected to the second drive chip.

8. The semiconductor device according to claim 7, characterized in that, The long drive pin and the short drive pin in the first drive pin are alternately distributed along the first direction; and / or The long drive pin and the short drive pin in the second drive pin are alternately distributed along the first direction.

9. The semiconductor device according to claim 7, characterized in that, The first drive pin includes a first pseudo-pin, which includes a first pseudo-ground pin. The first pseudo-ground pin extends from the edge of the molding compound near the drive support member in the second direction to the outside of the molding compound. The length of the portion of the first pseudo-ground pin outside the molding compound in the second direction is less than the length of the portion of the short drive pin outside the molding compound in the second direction. The first drive pin has a first low-voltage pin region, and the first pseudo-ground pin is located in the first low-voltage pin region. The two first drive pins located on both sides of the first pseudo-ground pin and adjacent to the first pseudo-ground pin are both long drive pins; and / or The second drive pin includes a second pseudo-pin, which includes a second pseudo-ground pin. The second pseudo-ground pin extends from the edge of the molding compound near the drive support member in the second direction to the outside of the molding compound. The length of the portion of the second pseudo-ground pin outside the molding compound in the second direction is less than the length of the portion of the short drive pin outside the molding compound in the second direction. The second drive pin has a second low-voltage pin region, and the second pseudo-pin is located in the second low-voltage pin region. The two second drive pins located on both sides of the second pseudo-ground pin and adjacent to the second pseudo-ground pin are both long drive pins; and / or The drive support further includes two third pseudo-pins, each comprising a third pseudo-ground pin and a first high-side gate drive supply voltage pseudo-pin. In the first direction, the two third pseudo-pins are distributed between and close to adjacent first and second drive pins. In the first direction, adjacent first and second drive pins are both short pins; and / or The semiconductor device further has a third direction, which is perpendicular to the first direction and the second direction; the molding compound has a third groove on the side of the second direction near the drive support member, the third groove is located between adjacent first drive pins and second drive pins, the third groove is recessed into the molding compound from the peripheral side of the molding compound on the side of the second direction closer to the drive support member, and the third groove penetrates the molding compound in the third direction.

10. The semiconductor device according to any one of claims 7-9, characterized in that, The substrate further includes a PFC power pad, which is disposed on one side of the first inverter pad and the second inverter pad in the first direction, and the PFC power pad is provided with a PFC power chip. The drive support body further includes a third drive pad, and the drive pin further includes a third drive pin. The third drive pad is at least partially located on one side of the PFC power pad in the second direction. The third drive pad is provided with a third drive chip, and the third drive chip is connected to the third drive pin and the PFC power chip respectively. The long drive pin and the short drive pin in the third drive pin are alternately distributed along the first direction.

11. The semiconductor device according to claim 10, characterized in that, The third driving pad and the second driving pad are arranged adjacent to each other in the first direction. The driving support also includes two fourth pseudo-pins, which are connected to the second driving pad. In the first direction, the two fourth pseudo-pins are distributed between and close to the adjacent third driving pin and the second driving pin, and the two fourth pseudo-pins include a fourth pseudo-ground pin and a second high-side gate drive supply voltage pseudo-pin; and / or The semiconductor device further has a third direction, which is perpendicular to the first direction and the second direction. The molding compound has a fourth groove on the side of the second direction near the drive support member. The fourth groove is located between adjacent third drive pins and second drive pins, or between adjacent third drive pins and first drive pins. The fourth groove is recessed into the molding compound from the outer peripheral side of the molding compound on the side closer to the drive support member in the second direction, and the fourth groove penetrates the molding compound in the third direction; and / or The third driving pin includes a gate jumper pad pseudo-pin. Of the two third driving pins located on both sides of the gate jumper pad pseudo-pin and adjacent to the gate jumper pad pseudo-pin, one is the long driving pin and the other is the short driving pin.

12. The semiconductor device according to claim 11, characterized in that, In the first direction, one of the adjacent third drive pin and second drive pin is the short drive pin, and the other is the long drive pin, or In the first direction, one of the adjacent third drive pin and the first drive pin is the short drive pin, and the other is the long drive pin.

13. The semiconductor device according to claim 1, characterized in that, The semiconductor device further has a third direction, which is perpendicular to the first direction and the second direction; The molding compound has a groove on the side of the drive support member in the second direction. The groove, the drive pin and the rectifier pin are distributed at intervals along the first direction. The groove is recessed into the molding compound from the outer peripheral side of the molding compound on the side of the drive support member in the second direction. The groove penetrates the molding compound in the third direction. The width of the groove increases from the middle to both ends in the third direction.

14. An electrical appliance, characterized in that, include: The semiconductor device according to any one of claims 1-13.

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