Crystal cut edge apparatus

Abstract

The application discloses a crystal cutting edge device, which comprises a base, a bearing assembly and a cutting device arranged on the base, the bearing assembly comprises a bearing table with a bearing surface smaller than a supported surface of a crystal to be processed, when the crystal to be processed is placed on the bearing table in a central alignment, a peripheral portion of the crystal to be processed is suspended on the bearing table for the cutting device to cut the peripheral portion; and a crystal centering device, which comprises a shooting mechanism arranged relative to the bearing table to obtain an image of the crystal to be processed, and a guide mechanism electrically connected to the shooting mechanism to show a crystal center offset position based on the image of the crystal to be processed. The crystal cutting edge device of the application detects whether the crystal placed on the bearing table is aligned with the center of the bearing surface, and adjusts the position of the crystal according to the detection result, so as to improve the cutting precision of the peripheral layer of the crystal.

Description

Technical Field

[0001] This application relates to the field of crystal processing technology, and in particular to a crystal edge cutting device. Background Technology

[0002] Crystals, based on their varying properties, are widely used in many key fields such as integrated circuits, photoelectric detection, surface acoustic waves and communications, laser technology, and power devices. Crystals are typically obtained through crystal growth techniques such as the Czochralski method (also known as the pulling method) and the zone melting method. However, due to the instability of crystal morphology during the initial forming stage, directly grown crystals may not meet the requirements for subsequent processing in terms of geometry or surface quality. Furthermore, in some cases, it is desirable to further modify the dimensions of the processed crystal for application in specific fields. Therefore, in practical applications, removing the excess portion (i.e., the part exceeding the target size) of the target crystal is a necessary step.

[0003] When processing crystals, they need to be placed on a support platform. Especially for crystals that need to be cut at the outer edge, the relative positional deviation between the crystal center and the center of the support platform will affect the processing accuracy of the crystal. Therefore, how to ensure that the crystal to be processed can be placed on the support platform in a center-aligned manner is a technical problem that needs to be solved. Summary of the Invention

[0004] In view of the shortcomings of the above-mentioned related technologies, the purpose of this application is to provide a crystal cutting device to overcome the problem of reduced crystal processing accuracy caused by misalignment between the center of the crystal to be processed and the center of the support stage.

[0005] To achieve the above and other related objectives, a first aspect of this application provides a crystal edge cutting device, comprising: a base on which a support assembly and a cutting device are disposed, the support assembly including a support platform with a support surface smaller than the supported surface of the crystal to be processed, wherein when the crystal to be processed is placed on the support platform with its center aligned, its outer peripheral portion is suspended from the support platform for the cutting device to perform outer edge cutting on the outer peripheral portion; and a crystal centering device including an imaging mechanism disposed relative to the support platform to acquire an image of the crystal to be processed, and a guiding mechanism electrically connected to the imaging mechanism to display the crystal center offset position based on the image of the crystal to be processed.

[0006] In some examples of the first aspect, the imaging mechanism is positioned above the support surface such that the imaging center is aligned with the center of the support platform.

[0007] In some examples of the first aspect, the crystal cutting device also includes a housing disposed on the base surrounding the carrier assembly and the cutting device, with the imaging mechanism fixed to the top of the housing.

[0008] In some examples of the first aspect, the top of the housing is provided with a mounting plate with holes, and the shooting mechanism is fixed to the mounting plate with the lens placed in the holes.

[0009] In some examples of the first aspect, a light source assembly is provided on the side of the mounting plate facing the support platform.

[0010] In some examples of the first aspect, the guiding mechanism is configured as a display device to visually show the offset position of the crystal center.

[0011] In some examples of the first aspect, the cutting device includes a wire saw for cutting in coordination with the rotation of the support table to obtain an outer edge layer and a crystal of a predetermined diameter when the wire saw is relatively moved to axially cut into a predetermined thickness of the outer peripheral portion.

[0012] In some examples of the first aspect, the wire saw is arranged vertically, and the support assembly further includes a support platform moving mechanism for moving the support platform to feed the crystal to be processed toward the wire saw.

[0013] In some examples of the first aspect, the crystal edging apparatus further includes a crystal clamping device disposed corresponding to the support stage to clamp the crystal to be processed.

[0014] In some examples of the first aspect, the crystal clamping device includes a clamping column and a clamping mechanism disposed on the clamping column. The clamping mechanism includes a pressure head and a clamping drive structure for driving the pressure head to rise and fall to clamp or release the crystal to be processed. The pressure head is connected to the drive structure via a rotating shaft so that the pressure head can cooperate with the rotation of the support table to clamp the rotation of the crystal to be processed.

[0015] In some examples of the first aspect, the crystal edging device also includes an outer edge support assembly that is arranged around the support platform and has a wire saw clearance.

[0016] In some examples of the first aspect, the crystal to be processed is configured as a lithium tantalate crystal or a lithium niobate crystal.

[0017] In summary, the crystal edge cutting device disclosed in this application improves the cutting accuracy of the outer edge layer of the crystal by setting a crystal alignment device to detect whether the center of the crystal placed on the support platform is aligned with the center of the support surface, and then adjusting the crystal position according to the detection result. Attached Figure Description

[0018] The specific features involved in this application are shown in the appended claims. A better understanding of the features and advantages of the invention can be achieved by referring to the exemplary embodiments and accompanying drawings described in detail below. A brief description of the drawings is as follows:

[0019] Figure 1 The diagram shown is a structural schematic of a crystal edging device according to one embodiment of this application.

[0020] Figure 2 The diagram shown is a schematic representation of the structure of a crystal processing stage in one embodiment of this application, viewed from a specific angle.

[0021] Figure 3 The diagram shown is a partial structural schematic of the carrier component in one embodiment of this application.

[0022] Figure 4 The diagram shown is a schematic representation of the cutting operation in one embodiment of this application.

[0023] Figure 5 The diagram shown is a structural schematic of the rotating platform mechanism in one embodiment of this application.

[0024] Figure 6 The diagram shown is a schematic representation of the winding method of the cutting wire unit included in the cutting device in one embodiment of this application.

[0025] Figure 7 The diagram shown is a structural schematic from the bottom view of the platform moving mechanism in one embodiment of this application.

[0026] Figure 8 The diagram shown is a schematic representation of the crystal processing stage from another perspective in one embodiment of this application.

[0027] Figure 9 The diagram shown is a structural schematic of a crystal edging device according to one embodiment of this application.

[0028] Figure 10 Displayed as Figure 9 A magnified schematic diagram of region B in the crystal edging device shown.

[0029] Figure 11 The flowchart shown is a process flow diagram of the crystal edge cutting method of this application in one embodiment. Detailed Implementation

[0030] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand the advantages and technical effects of this application from the content disclosed in this specification. In the following description, some embodiments may be referenced to the accompanying drawings. It should be understood that other embodiments not shown in the drawings may also be used, and changes in specific structures, parts or mechanisms, components, and operations may be made without departing from the spirit and scope of this application. The following detailed description should not be considered limiting, and the scope of the embodiments of this application is limited only by the claims published in this application. The terminology used herein is for describing particular embodiments only and is not intended to limit this application.

[0031] It should be understood that although the terms first, second, or third, etc., may be used herein to describe various elements or parameters in some embodiments, these elements or parameters should not be limited by these terms. These terms are used only to distinguish one element or parameter from another, and not to define the order, priority, or importance of multiple elements. For example, a first connection portion may be referred to as a second connection portion, and similarly, a second connection portion may be referred to as a first connection portion, without departing from the scope of the various described embodiments.

[0032] Furthermore, as used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context indicates otherwise. It should be further understood that the terms “comprising,” “including,” and “including” indicate the presence of the stated features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. For example, a process, method, system, product, or device that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products, or devices. Additionally, the term “and / or,” which may be used hereinafter, describes the relationship between related objects, indicating that three relationships may exist; for example, A and / or B can represent: A alone, A and B simultaneously, and B alone. Furthermore, the character “ / ”, unless otherwise specified, generally indicates that the preceding and following related objects have an “and / or” relationship. Additionally, in the description of embodiments of this application, “multiple” refers to two or more. Furthermore, the terms “or” and “and / or” as used herein are interpreted as inclusive, or mean either one or any combination thereof. Exceptions to this definition only arise when a combination of elements, functions, steps, or operations is inherently mutually exclusive in some way.

[0033] It should also be understood that when an element, such as a layer, region, or substrate, is referred to as being "on" another element or extending "on" another element, the element may be directly on or directly extending onto the other element, or intermediate elements may be present. Conversely, when an element is referred to as being "directly on" another element or "directly extending onto" another element, no intermediate elements are present. It will also be understood that when an element is referred to as being "connected" or "attached" to another element, it may be directly connected or coupled to the other element, or intermediate elements may be present. Conversely, when an element is referred to as being "directly connected" or "directly coupled" to another element, no intermediate elements are present. Furthermore, the term "coupled" generally means physical, mechanical, magnetic, and / or electrical coupling or connection, and in the absence of specific contrasting language, the presence of intermediate elements between coupled or associated items is not excluded.

[0034] Relative terms such as “below,” “above,” “upper,” “lower,” “horizontal,” or “vertical” may be used herein to describe the relationship between one element, layer, or region and another element, layer, or region illustrated in the figures. It will be understood that these terms are intended to cover different device orientations other than those depicted in the figures. In this application, “vertical,” “horizontal,” and “parallel” are defined as including cases within ±10% of the standard definition. For example, vertical typically refers to an angle of 90° relative to a reference line, but in this application, vertical refers to cases including those within 80° to 100°. Unless otherwise expressly stated, comparative quantitative terms (such as “above” and “below”) are intended to cover the concept of equality. As an example, “above” can mean not only “greater than” in a mathematical sense but also “equal to.”

[0035] Unless otherwise specified, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. It will also be understood that terms used herein shall be interpreted as having the meaning consistent with their meaning in the context of this specification and the relevant field, and shall not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0036] The present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. The technical solutions in the embodiments of the present application are clearly and completely described. Obviously, the described embodiments are only a part of the embodiments of the present application, not all of them. Based on the embodiments in the present application, all other embodiments and technical effects obtained by those skilled in the art without creative effort should fall within the scope of protection of the present application. The terms "an embodiment," "implementation," or similar wording used throughout this specification mean that a specific feature, structure, or characteristic described together with an implementation is included in at least one embodiment of the present application. Therefore, the appearance of the phrases "in an embodiment," "in an embodiment," and similar wording throughout this specification may (but does not necessarily) refer to the same implementation.

[0037] To clarify the definition of direction and the operation between different structures, the embodiments disclosed in this application define a three-dimensional space defined by the horizontal, vertical, and longitudinal directions, where the horizontal, vertical, and longitudinal directions are all straight lines and are mutually perpendicular. For example, the length extension direction of the base bottom is defined as horizontal (as shown in the figure). Figure 1 The direction of arrow X in the diagram), defines the width extension direction of the base as longitudinal (as shown in the diagram). Figure 1 The direction of the arrow Y in the diagram), the vertical direction is also called the perpendicular direction, or the up-down direction is defined as the vertical (as shown in the diagram). Figure 1 (The direction of arrow Z in the image).

[0038] In view of the problems of poor crystal quality or waste of excess crystal material caused by obtaining crystals of the target size in the related technologies described in the background art, this application provides a crystal cutting device and a crystal cutting method applied to the crystal cutting device. By setting a support stage that can suspend and rotate the crystal, the cutting device can cooperate with the rotation of the support stage to cut the suspended outer periphery of the crystal to obtain the outer edge layer of the crystal. While ensuring the crystal quality, the outer edge layer obtained by cutting can be recycled again, improving the utilization rate of crystal material and reducing production costs.

[0039] The crystals mentioned include, but are not limited to, semiconductor crystals (such as silicon, silicon carbide, gallium arsenide), piezoelectric and optoelectronic crystals (such as lithium tantalate, lithium niobate, quartz), laser crystals (such as sapphire), and other hard and brittle crystal materials. In particular, lithium tantalate (LiTaO3, abbreviated as LT) and lithium niobate (LiNbO3, abbreviated as LN) crystals are expensive and have short growth lengths. Due to their excellent piezoelectric, thermoelectric, and optoelectronic properties, they are widely used in the manufacture of surface acoustic wave (SAW) and bulk wave (BAW) devices, and are important materials required for the development of 5G technology.

[0040] The following combination Figures 1 to 8 A detailed description of embodiments of the crystal cutting device of this application is provided.

[0041] Please see Figure 1 The figure shows a schematic diagram of a crystal edge-cutting device according to one embodiment of this application. As shown, the crystal edge-cutting device includes a base 1, a crystal processing stage 2 disposed on the base 1, and a cutting device 3. The crystal processing stage 2 is used to carry the crystal 4 to be processed, and the cutting device 3 is used to cooperate with the crystal processing stage 2 to perform edge-cutting operations on the crystal 4 to be processed.

[0042] In one embodiment, the base 1 is a platform for supporting various devices, mechanisms, or components used in crystal dicing operations. As the main component of the crystal dicing equipment, it can be made of a heavy material such as stainless steel or cast iron to provide robust overall stability. In some examples, the base 1 includes fixing or limiting structures, such as a base, column, or frame, for supporting different devices, mechanisms, or components in the crystal dicing equipment. In some examples, the base 1 can be a single, integrated base. In some examples, the base 1 may also include multiple independent bases.

[0043] Please see Figure 2 and Figure 3 , Figure 2 The diagram shown is a schematic representation of the structure of a crystal processing stage from one viewpoint in one embodiment of this application. Figure 3 The diagram shown is a partial structural schematic of the carrier component in one embodiment of this application, as follows: Figure 2 and Figure 3 As shown, the crystal processing stage 2 includes a support component 20 for supporting the crystal 4 to be processed. The support component 20 includes a support stage 201. The support stage 201 has a support surface 2010, which is smaller than the supported surface of the crystal 4 to be processed, so that when the crystal 4 to be processed is placed on the support stage 201 with its center aligned, its outer periphery is suspended from the support stage 201.

[0044] The bearing surface 2010 of the bearing platform 201 refers to a surface used to support the crystal 4 to be processed, and the supported surface 40 of the crystal 4 to be processed refers to the surface that is in contact with the bearing surface 2010 and is supported. Figure 3As shown in the example, the bearing surface 2010 is the upper surface of the bearing platform 201, and the supported surface 40 is the lower surface of the crystal 4 to be processed. Taking the crystal 4 to be processed as a cylinder and the bearing surface 2010 as a circular surface as an example, corresponding to the cylindrical shape of the crystal 4 to be processed, its supported surface 40 is also a circular surface. Setting the diameter of the bearing surface 2010 to be smaller than the diameter of the supported surface 40 makes the bearing surface 2010 smaller than the supported surface 40. When the crystal 4 to be processed is placed on the bearing platform 201 with its center aligned with the center of the bearing platform 201, the central part of the crystal 4 to be processed contacts the bearing surface of the bearing platform 201, and its outer peripheral part that does not contact the bearing surface can extend out of the bearing platform 201, as shown in the example. Figure 2 The suspended state shown is illustrated. It should be understood that the supporting surface being the upper surface of the support platform and the supported surface being the lower surface of the crystal to be processed is merely an exemplary example. In other embodiments, the supporting surface may also be the lower surface of the support platform and the supported surface may be the upper surface of the crystal to be processed. In this case, the crystal to be processed is placed on the support platform in an inverted position. The supporting surface and the supported surface can also be configured as other surfaces, which will not be elaborated here. Furthermore, configuring the crystal to be processed 4 as a cylinder and the supporting surface 2010 as a circular surface is also merely an example. The crystal to be processed 4 and the supporting surface 2010 can also be other shapes, as long as their centers are aligned with the center of the support platform and their outer peripheral portion to be cut is suspended outside the support platform.

[0045] It should be noted that the outer periphery of the crystal to be processed is suspended from the support platform. This means that the outer periphery of the crystal to be processed does not contact the support surface (which can be understood as not being supported). It can extend out of the support platform, so that the outer periphery is in a suspended state. This allows the wire saw in the cutting device to only contact and cut the outer periphery, avoiding interference from other devices, mechanisms, or components.

[0046] In one embodiment, such as Figure 3As shown, the support platform 201 includes a platform body 2011 and a protective structure 2012 surrounding the platform body 2011. The support surface 2010 of the support platform 201 can correspond to the surface on the platform body 2011 used to support the crystal 4 to be processed. The protective structure 2012 surrounds the periphery of the platform body 2011 to prevent contamination of the platform body 2010. For example, when the cutting device releases cutting fluid using a spray mechanism, the protective structure 2012 can prevent cutting fluid or impurities from entering the platform body 2011. In this embodiment, the outer peripheral portion of the crystal 4 to be processed is suspended from the support platform 201, and it must be ensured that its outer peripheral portion extends beyond the protective structure 2012. For example, this can be achieved by configuring the supported surface of the crystal 4 to be processed to be further larger than the surface jointly formed by the protective structure 2012 and the support surface 2010. In an embodiment where the protective structure 2012 is not provided in another support platform 201, the outer periphery of the crystal 4 to be processed only needs to extend beyond the platform body 2011 to be suspended above the support platform 201. In this case, the supported surface of the crystal 4 to be processed is configured to be larger than the support surface 2010. Of course, in other embodiments, the support platform 201 may include more or fewer structures, as long as it is ensured that the supported surface of the crystal 4 to be processed is configured to be larger than the support surface 2010, and that the outer periphery of the crystal 4 to be processed is suspended outside the support platform 201.

[0047] In one embodiment, the support stage can also be rotated to drive the crystal to be processed to rotate. Therefore, the support assembly further includes a support stage rotation mechanism disposed below the support stage to drive the support stage to rotate. Please refer to... Figure 2 and Figure 5 , Figure 5 The diagram shown is a structural schematic of the rotating platform mechanism in one embodiment of this application. For ease of demonstration, compared to... Figure 2 , Figure 5The outer casing of the platform rotation mechanism is omitted in the figure. As shown, the support assembly 20 includes a platform 201 and a platform rotation mechanism 202 disposed below the platform 201 to drive the platform 201 to rotate. In one embodiment, the platform rotation mechanism 202 is configured to include a rotating shaft 2022 disposed at the center of the platform 201 and a rotation drive mechanism 2020 connected to the rotating shaft 2022. The rotation drive mechanism 2020 includes a motor (not shown) and a conveyor belt assembly 2021 driven by the motor to rotate. The conveyor belt assembly 2021 is connected to the rotating shaft to provide rotational power to the rotating shaft 2022 under the drive of the motor, thereby driving the platform 201 to rotate. In some examples, the motor can drive the conveyor belt assembly 2021 to rotate clockwise and counterclockwise. In another embodiment, the carrier table rotation mechanism 202 may further include a brake positioner (not shown), which is used to stop the rotation of the carrier table 201. At the same time, it can also prevent the carrier table 201 from rotating due to external forces when it stops moving, thereby further ensuring the cutting accuracy.

[0048] Please see Figure 1 and Figure 4 , Figure 4 The diagram shown is a schematic representation of the edge-cutting operation in one embodiment of this application, as follows: Figure 1 and Figure 4 As shown, the cutting device 3 is mounted on the base 1, and includes a wire saw 30. The wire saw 30 is used to cooperate with the rotation of the support table 201 when it moves relative to the preset thickness of the outer periphery of the crystal to be processed 4 in the axial direction. Figure 4 The rotating arrow R in the diagram is used for cutting to obtain the outer edge layer 41 and a crystal 40 of a preset diameter. The axial cutting refers to the wire saw 30 cutting in a manner that keeps parallel to the axis of the crystal 4 to be processed. Figure 3 and Figure 4 In the embodiment shown where the crystal to be processed is placed with its axis parallel to the Z-axis, axial cutting can also be understood as vertical cutting. For example, the preset thickness is set to any value between 1mm and 3mm, such as 1mm, 1.5mm, 2mm, 3mm, etc., which can be set according to actual size requirements.

[0049] Specifically, since the outer periphery of the crystal 4 to be processed is suspended on the support platform, the wire saw 30 of the cutting device can move relative to the outer periphery of the crystal 4 to first contact it and then move further relative to cut into the preset thickness. At this time, the support platform drives the crystal 4 to be processed to rotate, so that the wire saw 30 can perform a round cutting operation on the outer periphery. The outer edge layer 41 obtained by cutting is a whole piece and can be recycled again, which improves the utilization rate of crystal materials and reduces production costs.

[0050] In one embodiment, the cutting device includes a wire cutting machine base and a wire cutting unit disposed on the wire cutting machine base. The wire cutting unit includes a cutting wheel, a transition wheel, and a closed-loop cutting wire connected end to end. The closed-loop cutting wire is wound around the cutting wheel and the transition wheel to form the wire saw. Please refer to... Figure 6 The figure shows a schematic diagram of the winding method of the cutting wire unit included in the cutting device of this application in one embodiment. As shown, the cutting wire unit includes cutting wheels 31a and 31b, transition wheels 32a and 32b, and a closed-loop cutting wire 33 connected end to end. The closed-loop cutting wire 33 is arranged between the cutting wheels 31a and 31b and the transition wheels 32a and 32b to form a cutting wire saw 30. The cutting wire saw 30 can perform cutting operations on the crystal to be processed on the support platform 201 as the support platform 201 rotates. Among them, a drive mechanism (not shown) is provided on the transition wheel 32b to drive the transition wheel 32b to rotate at high speed, thereby driving the transition wheel 32a and the cutting wheels 31a and 31b to rotate passively, and thus driving the cutting wire saw 30 to perform cutting operations. In some examples, the drive mechanism is configured as a rotary motor, which has a power output shaft and the power output shaft is shaft-connected to the transition wheel 32b. In this way, the cutting wire saw 30 can be driven by the wound transition wheel 32b to run at high speed along the winding direction. Of course, the drive mechanism can also be other drive sources such as hydraulic motors, which only need to drive the cutting wire saw 30 to run. This application does not impose any restrictions.

[0051] Relative movement refers to a movement that causes a change in the position between the wire saw and the crystal to be processed on the support table, and it is not limited to the object of the movement. For example, the support table may remain stationary while the cutting device moves, the cutting device may remain stationary while the support table moves, or both may move. The only requirement is that after the relative movement, the wire saw cuts axially into the predetermined thickness of the outer periphery of the crystal to be processed. Furthermore, the movement includes, for example,... Figure 1 The following are examples of single or arbitrary combinations of movements: left-right movement in the X direction, forward-backward movement in the Y direction, up-down movement in the Z direction, and rotation in space (e.g., the cutting device being adjusted from horizontal to vertical or other rotations by rotating a wire saw). Those skilled in the art can configure the movement according to the actual relative positions of the support platform and the cutting device, and this application does not impose any restrictions on this.

[0052] It should be stated in advance that the following description of the crystal processing stage and the cutting device to achieve the crystal cutting operation by means of relative movement generated by the moving support stage while the cutting device remains stationary should not be construed as a limitation of this application.

[0053] In one embodiment, such as Figure 2As shown, the support assembly 2 also includes a support stage moving mechanism 203 for moving the support stage 201 to feed the crystal 4 to be processed toward the wire saw. In one example, it is presented as follows: Figure 1 As shown, the crystal to be processed 4 is supported by the support platform with its axis parallel to the Z-axis. The cutting device 3 is configured as a wire saw 30 arranged vertically. That is, the cutting device 3 is set on the base 1 with the wire saw 30 kept parallel to the axis of the crystal to be processed 4. In this example, the support platform moving mechanism 203 can drive the support platform to move in any direction or any combination of directions in the X direction (lateral), Y axis direction (longitudinal), and Z direction (vertical) to adjust the relative position of the crystal to be processed and the wire saw on the support platform, thereby enabling the wire saw to move relative to the preset thickness of the axial cutting into the outer periphery.

[0054] Please see Figure 2 and Figure 7 , Figure 7 The diagram shown is a bottom view of the carrier platform moving mechanism in one embodiment of this application. As shown, the carrier platform moving mechanism 203 includes a guide rail assembly 2031 arranged laterally on the base, a transport seat 2032 disposed on the guide rail assembly 2031 and connected to the carrier platform 201, and a transport translation mechanism 2033 for driving the transport seat 2032 to move laterally on the guide rail assembly 2031. In this embodiment, the carrier platform and the wire saw are arranged along the X direction. Thus, the carrier platform moving mechanism 203 only needs to drive the carrier platform to move laterally to move the crystal to be processed on the carrier platform to the preset thickness of the outer periphery cut by the wire saw.

[0055] In one embodiment, such as 2 and Figure 7As shown, the transport seat 2032 spans the guide rail assembly 2031 and is connected to the support platform 201. Further, the support platform 201 can be connected to the transport seat 2032 via a support platform rotation mechanism 202 at its bottom. The transport seat 2032 may include a seat body 20321 and a translation slider 20322 disposed at the bottom of the seat body 20321 and cooperating with the guide rail assembly 2031. Multiple translation sliders 20322 can be configured to ensure smooth movement of the seat body 20321. The guide rail assembly 2031 includes a guide rail cover 20311 and a guide rail 20312 disposed on the guide rail cover 20311. The guide rail 20312 guides the movement of the translation slider 20322. The component transport translation mechanism 2033 includes a translation screw assembly 20331 connected to the base body 20321, and a translation motor 20332 connected to the translation screw assembly 20331 for driving the base body 20321 to translate. The translation motor drives the screw in the translation screw assembly 20331 to rotate forward and reverse, thereby driving the component transport base 2032 to move laterally along the guide rail assembly 2031. For example, the translation motor 20332 drives the screw in the component transport translation screw assembly 20331 to rotate forward, causing the support platform 201 to move along the guide rail assembly 2031 towards the cutting device 3; the translation motor 20332 drives the screw in the component transport translation screw assembly 20331 to rotate in reverse, causing the support platform 201 to move along the guide rail assembly 2031 away from the cutting device 3.

[0056] In another embodiment, the component translation mechanism 2033 may also be configured to include a component translation rack, a component translation gear, and a gear drive motor. The component translation rack is laterally arranged on the base, and the component translation gear is located on the component carrier 2032 and meshes with the component translation rack. The gear drive motor is used to drive the component translation gear to rotate so that the associated component carrier 2032 moves along the component translation rack, thereby realizing the lateral movement of the component carrier 2032 along the guide rail assembly 2031. For example, the gear drive motor drives the component translation gear to rotate forward, driving the component carrier 2032 to move the support platform 201 along the guide rail assembly 2031 toward the cutting device 3; the gear drive motor drives the component translation gear to rotate in reverse, driving the component carrier 2032 to move the support platform 201 along the guide rail assembly 2031 away from the cutting device 3.

[0057] In one embodiment, such as Figure 2As shown, the crystal processing stage 2 also includes a crystal clamping device 21 corresponding to the support stage 201 to clamp the crystal 4 to be processed. The crystal clamping device 21 and the support stage 201 work together to improve the stability of the crystal 4 to be processed and ensure that the crystal center does not wobble during operation. In one example, the crystal clamping device 21 includes a clamping column 211 and a clamping mechanism disposed on the clamping column 211. The clamping mechanism includes a pressure head 212 and a clamping drive structure 213 for driving the pressure head to rise and fall to clamp or release the crystal to be processed. The pressure head 212 is connected to the clamping drive structure 213 through a rotating shaft so that the pressure head 212 can cooperate with the rotation of the support stage 201 to clamp the rotation of the crystal 4 to be processed. In this example, as Figure 2 As shown, the clamping column 211 can be further configured on the carrier platform moving mechanism 203 to move together with the carrier platform 201. However, this application is not limited to this. The crystal clamping device can be provided with a separate moving mechanism, or the crystal clamping device can be located near the cutting device so that the crystal 4 to be processed is clamped after the carrier platform moves to the preset thickness of the axial portion of the cutting wire saw cut into it. This will not be elaborated further here. The clamping drive structure 213 can be configured as a cylinder assembly. In one example, the cylinder assembly includes a cylinder (not shown) and a telescopic member (not shown) connected to the cylinder. The pressure head 212 is located at the bottom of the telescopic member (i.e., on the surface of the telescopic member facing the carrier platform 201). The cylinder drives the telescopic member to move the pressure head 2121 up and down to release or clamp the crystal to be processed located on the carrier platform 201.

[0058] Given that the support platform 201 has a support platform rotation mechanism 202, which can drive the crystal to be processed located thereon to rotate. To cooperate with the support platform rotation mechanism 202 of the support platform 201, in one embodiment, the pressure head 2121 can be connected to the clamping drive structure 2122 via a rotating shaft (not shown). For example, a bearing is provided at the bottom of the telescopic component of the cylinder assembly, and the pressure head 2121 has a rotating shaft adapted to the bearing. The pressure head 2121 is rotatably mounted on the bearing of the telescopic component via the rotating shaft. Thus, when the pressure head 2121 clamps the crystal to be processed, the support platform 201 drives the crystal to be processed to rotate, and the pressure head 2121 can also rotate in coordination with the crystal to be processed. To better protect the silicon rod to be cut, a buffer pad (not shown) can be provided between the pressure head 2121 and the crystal to be processed. This buffer pad is fixed to the clamping surface of the pressure head 2121 (which is the lower surface of the pressure head).

[0059] In one embodiment, please refer to Figure 2 and Figure 8 , Figure 8The diagram shown is a schematic representation of the crystal processing stage 2 from another perspective in one embodiment of this application. The crystal processing stage 2 further includes an outer edge layer support component 22, which is provided around the support stage 201 and has a wire saw clearance 23. The outer edge layer support component 22 is used to support the outer edge layer of the cut crystal. Thus, after the outer edge layer is cut, it will not crack or break, but will be supported as a whole on the outer edge layer support component 22, facilitating the recovery of the outer edge layer of the crystal. Furthermore, the reserved wire saw clearance allows the wire saw to pass through and cut the crystal to be processed, avoiding interference with the normal operation of the wire saw due to the presence of the outer edge layer support component 22.

[0060] In one embodiment, the outer edge layer support assembly can be further configured on the carrier platform moving mechanism 203 to move together with the carrier platform 201. In this embodiment, the outer edge layer support assembly is arranged around the carrier platform 201, which can also conveniently provide a reference for the position of the crystal to be processed when placing it. The operator can use this as a reference to place the crystal to be processed at the center position of the carrier platform. In another embodiment, the outer edge layer support assembly can also be provided with a separate moving mechanism, or it can be set at a preset position on the machine base. When the carrier platform moves to a preset thickness where the wire saw cuts into the axial portion of the crystal to be processed, the support part in the outer edge layer support assembly is controlled to be below the outer edge layer of the crystal to be processed.

[0061] In one embodiment, the outer edge support assembly includes a support frame and a support portion disposed on the support frame. In one example, the support portion is configured as a C-shaped ring surrounding the support platform, the opening of the C-shaped ring corresponding to the direction of the wire saw to form a wire saw clearance. In this example, the support frame may be configured to include a support crossbar, which can be fixed to a clamping column included in the crystal clamping device, thus reusing the clamping column to save space. Furthermore, the support crossbar may be configured as a telescopic adjustment rod, thereby allowing the position of the support portion below the crystal to be adjusted according to the placement position of the crystal on the support platform and the cutting size of the crystal to be processed. In another example, such as... Figure 8 As shown, the support portion includes a plurality of support members 220 spaced apart around the support platform 201 to jointly support the edge layer, wherein the gap between a group of adjacent support members corresponds to the direction of the cutting wire saw to form the wire saw clearance 23. In this example, as shown... Figure 8As shown, the support frame 221 can be configured to correspond to multiple supports 220. The support frame 221 may include a support column 2211 and a support crossbar 2213 connecting the support column 2211 and the supports 220. The support column 2211 can be mounted on the carrier platform moving mechanism 203 to move with the carrier platform 201. Alternatively, some structures in the support frame 221 can be omitted through structural reuse. For example, the support frame near the clamping column can be configured to omit the support column and fix the support crossbar 2213 to the clamping column 221. Furthermore, the support crossbar 2213 can be configured as a telescopic adjusting rod, which can adjust the position of the support 220 below the crystal according to the placement position of the crystal on the carrier platform and the cutting size of the crystal to be processed, so as to receive the cut outer edge layer of the crystal without affecting the crystal cutting.

[0062] In one embodiment, the crystal edging apparatus may further include a housing. See also... Figure 9 The figure shows a schematic diagram of the crystal edge-cutting device in one embodiment of this application. As shown, the housing 5 is mounted on the base 1 around the crystal processing stage 2 and the cutting device 3, thus isolating the crystal processing stage and the cutting device for protection. The housing 5 may further be provided with a first door structure 51 corresponding to the crystal processing stage. The first door structure 51 can be used for loading or unloading. Specifically, the first door structure 51 can be opened to allow operators or machinery to place the crystal to be processed on the support platform included in the crystal processing stage, or to remove the crystal and edge layer of a preset diameter formed after processing. The housing 5 may further be provided with a second door structure 52 corresponding to the cutting device 3, which can be opened for maintenance or inspection of the cutting device 3. In some examples, the first door structure 51 and / or the second door structure 52 may be provided with observation windows to allow operators to monitor the internal condition of the equipment. In some examples, the first door structure 51 and / or the second door structure 52 may be provided with a switch detection mechanism to detect the state of the corresponding door structure. The switch detection mechanism may be, for example, a photoelectric sensor or a door magnet.

[0063] In one embodiment, such as Figure 9 As shown, the crystal sizing apparatus also includes a control device 7 electrically connected to the crystal processing stage 2 to control the movement of the crystal processing stage 2. In this embodiment, the control device 7 can control the crystal processing stage 2 to produce the movement or rotation required for the sizing operation, thereby completing the sizing operation. Of course, in other embodiments where the cutting device 3 is also required to complete the sizing operation, the control device 7 can be further electrically connected to the cutting device 3 to control the cutting device 3 and the crystal processing stage 2 to work in coordination to complete the sizing operation.

[0064] To ensure that the crystal to be processed is placed on the support platform in a center-aligned manner, in one embodiment, the crystal edging device may include a crystal alignment device corresponding to the support platform for detecting whether the crystal to be processed is center-aligned with the support platform. An operator or mechanical device can determine whether the crystal center is aligned with the center of the support platform based on the result detected by the crystal alignment device and adjust the crystal placement position if misalignment is found.

[0065] Please see Figure 9 As shown in the figure, the crystal alignment device includes an imaging mechanism 61 disposed relative to the support stage to acquire an image of the crystal to be processed, and a guiding mechanism 62 electrically connected to the imaging mechanism 61 to display the offset position of the crystal center based on the image of the crystal to be processed. Figure 9 In the example shown, the guide mechanism 62 is configured as a display device to visually display the crystal center offset position. For example, the display device can show an image of the crystal to be processed, and the displayed crystal center offset position includes a reference center (i.e., the center of the stage) marker shown in the image of the crystal to be processed and a center marker of the crystal currently being processed. The operator can determine the offset direction between the two based on the crystal center offset position for adjustment. Alternatively, the display device can directly display the offset amount and offset direction between the crystal center and the stage center, allowing the operator to adjust accordingly. During adjustment, the operator can manually adjust based on the results displayed on the display device, or they can control the mechanical structure for adjustment.

[0066] In other embodiments, the guidance mechanism 62 may also be configured as a voice prompt device. In this embodiment, the crystal offset position displayed by it may be shown to the operator by voice broadcast. Of course, the guidance mechanism 62 may also be configured as a light source prompt device or a combination of multiple prompts. This application does not limit this.

[0067] In one embodiment, the imaging mechanism 61 may be disposed above the support surface to acquire an image of the crystal to be processed when the crystal to be processed is placed on the support stage. Furthermore, the imaging mechanism 61 is disposed above the support stage with the imaging center aligned with the center of the support stage. Thus, when the crystal to be processed is placed on the support stage with the center aligned, the center of the crystal to be processed in the image of the crystal to be processed should be located at the center of the image; otherwise, it is considered that the placement position of the crystal to be processed needs to be adjusted.

[0068] In one implementation, the imaging mechanism 61 includes a camera. In one example, the camera includes a photosensor (e.g., a CCD or CMOS) to convert the surface-reflected light received by the photosensor from the crystal to be processed into an image of the crystal. The camera can be a color camera or a monochrome camera.

[0069] In one embodiment, such as Figure 9 As shown, the shooting mechanism 61 is fixedly mounted on the top of the housing 5. (See also...) Figure 10 Displayed as Figure 9 The diagram shows a partially enlarged view of region B in the crystal cutting device. A mounting plate 53 with a hole 530 is provided on the top of the housing 5. The imaging mechanism 61 is fixed to the mounting plate 53 with its lens placed in the hole 530. For example, an installation space can be provided on the top plate of the housing 5, and the mounting plate 53 is fixed to the top plate of the housing 5 by covering or obscuring the installation space. The imaging mechanism 61 may also include a mounting member to fix the camera so that the camera lens is placed in the hole 530. Furthermore, the mounting member can be configured to be height-adjustable or movable, thereby adjusting the position of the camera. It should be understood that the above-described mounting of the imaging mechanism 61 on the housing 5 is only one example. In other examples, the imaging mechanism 61 can also be mounted on a support structure on the base, and this application does not limit this.

[0070] To improve the ambient brightness inside the crystal slicing device and thus enhance the quality of the acquired image, in one embodiment, a light source assembly is also provided in the crystal slicing device. In one example, such as... Figure 10 As shown, the light source assembly 8 is disposed on the side of the mounting plate 53 facing the support platform. The light source assembly 8 can be configured as a ring light source to surround the lens of the shooting mechanism 61, but is not limited thereto. The light source assembly 8 can also be configured to include multiple strip light sources. The light source can be, for example, an LED light source or an OLED light source, and the light source can also be configured as a brightness-adjustable light source.

[0071] According to the crystal edge-cutting device in the above embodiments, by suspending the crystal on a rotating support platform, the cutting device, in coordination with the rotation of the support platform, cuts the suspended outer periphery of the crystal to obtain the outer edge layer, allowing the cut outer edge layer to be recycled. Furthermore, by providing a vertically arranged wire saw and a support platform moving mechanism that moves relative to the wire saw, the relative positions of the wire saw and the crystal on the support platform can be adjusted to obtain a crystal that meets the cutting dimensions. A crystal clamping device clamps the crystal placed on the support platform to stabilize the crystal's center during the cutting operation. A support platform supporting assembly supports the cut outer edge layer for easy recycling. A crystal alignment device detects whether the crystal placed on the support platform is aligned with the center of the support surface, and adjusts the crystal position based on the detection result to improve the cutting accuracy of the outer edge layer. A display device visually displays the deviation between the crystal center and the support surface center during the alignment detection operation, facilitating adjustments by the operator.

[0072] This application also provides a crystal cutting method applied to a crystal cutting device, the crystal cutting device including a base, a crystal processing stage disposed on the base, and a cutting device having a wire saw. For example, the crystal cutting device can be configured as the crystal cutting device disclosed in any of the foregoing embodiments; please refer to the specific details. Figures 1 to 10 The embodiments described herein will not be repeated here.

[0073] Please see Figure 11 The figure shows a flowchart of the crystal edge cutting method of this application in one embodiment. As shown in the figure, the crystal edge cutting method includes steps S10, S20 and S30.

[0074] In step S10, the crystal to be processed is placed on the support platform of the crystal processing stage with the center aligned; wherein the support surface of the support platform is smaller than the supported surface of the crystal to be processed so that the outer periphery of the crystal to be processed is suspended from the support platform.

[0075] In this step, when the operator or mechanical device places the crystal to be processed on the support platform, the center of the crystal to be processed must be aligned with the center of the support platform, so that the bearing surface of the support platform supports the central area of ​​the crystal to be processed, and the outer periphery of the crystal to be processed is suspended from the support platform. However, there are cases where the center of the crystal to be processed and the center of the support platform are not aligned when placing the crystal to be processed. In view of this, in one embodiment, after the crystal to be processed is placed, a step of detecting whether the center of the crystal to be processed is aligned with the support platform is also included. This step can be operated by the crystal alignment device described above, and if, for example, the display device shows that it is not aligned, the operator is notified to adjust the position of the crystal according to the prompt information on the display device until the center of the crystal to be processed is aligned with the support platform. For example, an image of the position of the crystal to be processed is taken, showing the relationship between the center of the crystal to be processed and the center of the support platform, and adjusting the center position of the crystal to be aligned with the center position of the support platform when they are not aligned. Please refer to the section on Figures 1 to 10 The specific implementation steps of step S10, which relates to the structural understanding of step S10, will not be repeated here.

[0076] In step S20, the support platform and the cutting device are moved relative to each other so that the wire saw cuts axially to the preset thickness of the outer periphery.

[0077] Relative movement refers to a movement that causes a change in the position between the wire saw and the crystal to be processed on the support table, and it is not limited to the object of the movement. For example, the support table may remain stationary while the cutting device moves, the cutting device may remain stationary while the support table moves, or both may move. The only requirement is that after the relative movement, the wire saw cuts axially into the predetermined thickness of the outer periphery of the crystal to be processed. Furthermore, the movement includes, for example,... Figure 1 The following are examples of single or arbitrary combinations of movements: left-right movement in the X direction, forward-backward movement in the Y direction, up-down movement in the Z direction, and rotation in space (e.g., the cutting device is adjusted from horizontal to vertical or other rotations by rotating the cutting wire saw). Those skilled in the art only need to make specific movements in step S20 according to the actual relative positions of the support platform and the cutting device.

[0078] In addition, to improve the stability of the crystal to be processed and prevent the center of the crystal from wobbling during processing, step S20 also includes a step of pressing the top of the crystal to be processed. For details, please refer to the section on... Figures 1 to 10 The specific implementation steps of the structural understanding step S20 are not described in detail here.

[0079] In step S30, the carrier stage is controlled to rotate the crystal to be processed one revolution so that the wire saw removes the outer edge layer of a preset thickness in the outer peripheral part to form a crystal with a preset diameter.

[0080] In this step, the excised outer edge layer can be supported by the provided outer edge layer support assembly for easy retrieval by the operator. Please refer to the section for details. Figures 1 to 10 The specific implementation steps of the structural understanding step S30 are not detailed here.

[0081] In summary, this application discloses a crystal edge-cutting device and a crystal edge-cutting method applied to the crystal edge-cutting device. By suspending the crystal on a rotating support platform, the cutting device, in coordination with the rotation of the support platform, cuts the suspended outer periphery of the crystal to obtain the outer edge layer, which can then be recycled. Furthermore, by providing a vertically arranged wire saw and a support platform moving mechanism that moves relative to the wire saw, the relative positions of the wire saw and the crystal on the support platform can be adjusted to obtain a crystal with the required cutting dimensions. A crystal clamping device clamps the crystal placed on the support platform to stabilize its center during the cutting operation. A support platform supporting assembly supports the cut outer edge layer for easy recycling. A crystal alignment device detects whether the crystal placed on the support platform is aligned with the center of the support surface, and adjusts the crystal position based on the detection result to improve the cutting accuracy of the outer edge layer. A display device visually displays the deviation between the crystal center and the center of the support surface during the alignment detection operation, facilitating adjustments by the operator.

[0082] The above embodiments are merely illustrative of the inventive essence and beneficial effects of this application, and are not intended to limit this application. Any person skilled in the art can modify or alter the above embodiments without departing from the principles and scope of this application. Therefore, all equivalent modifications or alterations achieved by those skilled in the art without departing from the spirit and technical concept disclosed in this application should still be covered by the claims of this application.

Claims

1. A crystal cutting device, characterized in that, include: A base is provided with a support assembly and a cutting device. The support assembly includes a support platform with a support surface smaller than the supported surface of the crystal to be processed. When the crystal to be processed is placed on the support platform with its center aligned, its outer peripheral portion is suspended from the support platform so that the cutting device can cut the outer peripheral portion. The crystal alignment device includes an imaging mechanism disposed relative to the support stage to acquire an image of the crystal to be processed, and a guiding mechanism electrically connected to the imaging mechanism to display the offset position of the crystal center based on the image of the crystal to be processed.

2. The crystal cutting device according to claim 1, characterized in that, The imaging mechanism is positioned above the support surface with its imaging center aligned with the center of the support platform.

3. The crystal cutting device according to claim 1, characterized in that, It also includes a housing disposed on the base surrounding the support assembly and the cutting device, with the shooting mechanism fixed to the top of the housing.

4. The crystal cutting device according to claim 3, characterized in that, The top of the housing is provided with a mounting plate with holes, and the shooting mechanism is fixed on the mounting plate with the lens placed in the holes.

5. The crystal cutting device according to claim 4, characterized in that, A light source assembly is provided on the side of the mounting plate facing the support platform.

6. The crystal cutting device according to claim 1, characterized in that, The guiding mechanism is configured as a display device to visually show the offset position of the crystal center.

7. The crystal cutting device according to claim 1, characterized in that, The cutting device includes a wire saw, which is used to cut in conjunction with the rotation of the support platform when it moves relative to the outer peripheral portion to a preset thickness in the axial direction to obtain an outer edge layer and a crystal of a preset diameter.

8. The crystal cutting device according to claim 7, characterized in that, The wire saw is arranged vertically, and the support assembly further includes a support platform moving mechanism for moving the support platform to feed the crystal to be processed toward the wire saw.

9. The crystal cutting device according to claim 7, characterized in that, It also includes a crystal clamping device that is configured corresponding to the support platform to clamp the crystal to be processed.

10. The crystal cutting device according to claim 9, characterized in that, The crystal clamping device includes a clamping column and a clamping mechanism disposed on the clamping column. The clamping mechanism includes a pressure head and a clamping drive structure for driving the pressure head to rise and fall to clamp or release the crystal to be processed. The pressure head is connected to the drive structure through a rotating shaft so that the pressure head can cooperate with the rotation of the support platform to clamp the crystal to be processed.

11. The crystal cutting device according to claim 1, characterized in that, It also includes an outer edge support component that is set around the support platform and has a reserved clearance for wire saws.

12. The crystal cutting device according to claim 1, characterized in that, The crystal to be processed is configured as either lithium tantalate crystal or lithium niobate crystal.

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