Laser isolation and passivation laser light path structure for crystalline silicon cell
Patent Information
- Application Number
- CN202522313128.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-31
- Publication Date
- 2026-09-04
- Estimated Expiration
- 2035-10-31
AI Technical Summary
[0002]传统的激光隔离钝化激光加工装置通过外光路倍频分光，设置的倍频晶体在谐振腔外，结构相对复杂、分散，转换效率相对较低，依赖提升入射基频光功率，转换效率有瓶颈，且晶体易受干扰；因此，存在以下缺陷：
[0025] This invention incorporates a first ultraviolet optical path structure and a second ultraviolet optical path structure within the laser. The frequency doubling process occurs inside the laser resonant cavity, allowing direct use of the highly energy-density fundamental frequency light circulating within the cavity. This results in low laser loss, high conversion efficiency, strong anti-interference capability, and good stability.
Smart Images
Figure CN224721376U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of battery processing technology, and in particular to a laser optical path structure for laser isolation and passivation of crystalline silicon batteries. Background Technology
[0002] Traditional laser isolation passivation laser processing devices use external optical path frequency doubling and beam splitting. The frequency doubling crystal is placed outside the resonant cavity, resulting in a relatively complex and dispersed structure, relatively low conversion efficiency, and reliance on increasing the incident fundamental frequency power. This leads to a bottleneck in conversion efficiency, and the crystal is susceptible to interference. Therefore, the following drawbacks exist:
[0003] 1. High laser loss, low conversion efficiency, and poor system compactness.
[0004] 2. The device is easily damaged, affecting the stability of the laser. Utility Model Content
[0005] To address the shortcomings of existing technologies, the purpose of this utility model is to provide a laser optical path structure for laser isolation and passivation of crystalline silicon solar cells. This structure includes a first ultraviolet optical path structure and a second ultraviolet optical path structure inside the laser. It can directly utilize the fundamental frequency light with extremely high energy density circulating within the cavity, resulting in low laser loss, high conversion efficiency, strong anti-interference ability, and good stability.
[0006] The embodiments of this utility model are achieved through the following technical solutions:
[0007] A laser-isolated passivated laser optical path structure for crystalline silicon solar cells includes:
[0008] The internal emission source includes a seed source for emitting the total laser beam, a pre-amplification unit, and a main beam splitter;
[0009] The first ultraviolet light path structure includes a first split amplifier, a first acousto-optic modulator, a first PBS module, a first green light frequency doubling module, a first ultraviolet frequency doubling module, and a first beam splitter arranged sequentially.
[0010] The second ultraviolet light path structure includes, in sequence, a second split mirror, a second split amplifier, a second acousto-optic modulator, a second PBS module, a second green light frequency doubling module, a second ultraviolet frequency doubling module, and a second beam splitter.
[0011] According to a preferred embodiment, both the output terminals of the first ultraviolet light path structure and the output terminals of the second ultraviolet light path structure are provided with PD signal control units.
[0012] According to a preferred embodiment, the main beam splitter is an infrared beam splitter, which comprises an infrared mirror unit and a beam splitter unit.
[0013] According to a preferred embodiment, it further includes a first red light frequency multiplier module disposed in front of the first split amplifier and a second red light frequency multiplier module disposed in front of the second split reflector.
[0014] According to a preferred embodiment, both the first ultraviolet light path structure and the second ultraviolet light path structure are respectively provided with a beam splitting component;
[0015] The beam splitting assembly includes, in sequence, a first beam splitting mirror, a half-wave mirror, a second-stage beam splitter, a reflection adjustment module, a third-stage beam splitter, a beam expander, a fourth-stage beam splitter, and a beam shaper.
[0016] Each of the beam-splitting components is provided with at least one laser output unit;
[0017] The reflection adjustment module is equipped with a precision beam splitting distance adjustment platform to adjust the beam splitting distance.
[0018] According to a preferred embodiment, the reflection adjustment module includes a second beam-splitting mirror, a third beam-splitting mirror, and a fourth beam-splitting mirror;
[0019] The beam splitting spacing precision adjustment platform is located between the third beam splitting reflector and the third-stage beam splitter.
[0020] According to a preferred embodiment, the laser output unit includes a galvanometer and a field mirror.
[0021] According to a preferred embodiment, it also includes an inner housing;
[0022] The internal emission source, the first ultraviolet light path structure, and the second ultraviolet light path structure are all located inside the internal housing.
[0023] According to a preferred embodiment, it further includes an online power monitoring energy feedback device, which is disposed on one side of the inner housing.
[0024] The technical solution of this utility model embodiment has at least the following advantages and beneficial effects:
[0025] This invention incorporates a first ultraviolet optical path structure and a second ultraviolet optical path structure within the laser. The frequency doubling process occurs inside the laser resonant cavity, allowing direct use of the highly energy-density fundamental frequency light circulating within the cavity. This results in low laser loss, high conversion efficiency, strong anti-interference capability, and good stability. Attached Figure Description
[0026] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0027] Figure 1 This is a schematic diagram of the laser optical path structure for laser isolation and passivation of crystalline silicon solar cells provided in an embodiment of the present invention.
[0028] Figure 2 This is a schematic diagram of the structure of the beam splitter provided in an embodiment of the present invention;
[0029] Figure 3 A three-dimensional structural diagram of the beam-splitting component provided in an embodiment of this utility model.
[0030] Icons: 1. Seed source; 2. Pre-amplification unit; 3. Main beam splitter; 4. First split amplifier; 5. First acousto-optic modulator; 6. First PBS module; 7. First green light frequency doubling module; 8. First ultraviolet frequency doubling module; 9. First beam splitter; 10. Second split mirror; 11. Second split amplifier; 12. Second acousto-optic modulator; 13. Second PBS module; 14. Second green light frequency doubling module; 15. Second ultraviolet frequency doubling module; 16. ... 17. Beam splitter; 18. PD signal control unit; 19. First red light frequency doubling module; 20. Second red light frequency doubling module; 21. First beam splitter reflector; 22. Half-wave mirror; 23. Second-stage beam splitter; 24. Reflection adjustment module; 25. Beam splitting spacing precision adjustment platform; 26. Third-stage beam splitter; 27. Beam expander; 28. Fourth-stage beam splitter and beam shaper; 29. Laser output unit; 20. Internal housing; 20. Online power detection energy feedback device. Detailed Implementation
[0031] To better understand and implement this invention, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings.
[0032] In the description of this utility model, it should be noted that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", and "outer" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.
[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
[0034] Example
[0035] Please refer to Figures 1 to 3 A laser-isolated passivated laser optical path structure for crystalline silicon solar cells, comprising:
[0036] The internal emission source includes a seed source 1 for emitting the total laser beam, a pre-amplification unit 2, and a main beam splitter 3; the first ultraviolet optical path structure includes a first split amplifier 4, a first acousto-optic modulator 5, a first PBS module 6, a first green light frequency doubling module 7, a first ultraviolet frequency doubling module 8, and a first beam splitter 9 arranged in sequence; the second ultraviolet optical path structure includes a second split reflector 10, a second split amplifier 11, a second acousto-optic modulator 12, a second PBS module 13, a second green light frequency doubling module 14, a second ultraviolet frequency doubling module 15, and a second beam splitter 16 arranged in sequence.
[0037] Preferably, both the output terminals of the first ultraviolet light path structure and the output terminals of the second ultraviolet light path structure are provided with a PD signal control unit 17.
[0038] Preferably, the main beam splitter 3 is an infrared beam splitter, which consists of an infrared mirror unit and a beam splitter unit.
[0039] Preferably, the system further includes a first red light frequency doubling module 18 disposed in front of the first split amplifier 4 and a second red light frequency doubling module 19 disposed in front of the second split reflector 10. The first red light frequency doubling module 18 makes the first laser beam splitting more stable; the second red light frequency doubling module 19 makes the second laser beam splitting more stable.
[0040] Preferably, both the first ultraviolet light path structure and the second ultraviolet light path structure are provided with a beam-splitting component;
[0041] The beam splitting assembly includes, in sequence, a first beam splitting mirror 20, a half-wave mirror 21, a second-stage beam splitter 22, a reflection adjustment module 23, a third-stage beam splitter 24, a beam expander 25, a fourth-stage beam splitter, and a beam shaper 26.
[0042] Each beam splitter is provided with at least one laser output unit 27;
[0043] The reflection adjustment module 23 is equipped with a beam splitting spacing precision adjustment platform 231 to adjust the beam splitting spacing.
[0044] Preferably, the reflection adjustment module 23 includes a second beam-splitting mirror, a third beam-splitting mirror, and a fourth beam-splitting mirror;
[0045] The beam splitting spacing precision adjustment platform 231 is located between the third beam splitting mirror and the third-stage beam splitter 24.
[0046] Preferably, the laser output unit 27 includes a galvanometer and a field mirror.
[0047] Preferably, it also includes an inner housing 28;
[0048] The internal emission source, the first ultraviolet light path structure, and the second ultraviolet light path structure are all located inside the internal shell 28.
[0049] Preferably, it also includes an online power monitoring energy feedback device, which is disposed on one side of the inner housing 28.
[0050] The working principle of this utility model:
[0051] In this embodiment, the seed source 1 of the internal emission source emits a total laser beam, which passes sequentially through the pre-amplification unit 2 and the main beam splitter 3 along the emission direction of the total laser beam. After passing through the main beam splitter 3, a first laser beam and a second laser beam are emitted respectively. The first laser beam enters the first ultraviolet optical path structure, and the second laser beam enters the second ultraviolet optical path structure. The first laser beam passes sequentially through the first split amplifier 4, the first acousto-optic modulator 5, the first PBS module 6, the first green light frequency doubling module 7, the first ultraviolet frequency doubling module 8, and the first beam splitter 9. Finally, after passing through the first beam splitter 9, it enters the corresponding beam splitting component for beam splitting or is emitted directly for laser isolation passivation processing of crystalline silicon cells. The second laser beam passes sequentially through the second split reflector 10, the second split amplifier 11, the second acousto-optic modulator 12, the second PBS module 13, the second green light frequency doubling module 14, the second ultraviolet frequency doubling module 15, and the second beam splitter 16. Finally, it enters the corresponding beam splitting component for beam splitting or is emitted directly for laser isolation passivation processing of crystalline silicon cells. The first beam splitter 9 and the second beam splitter 16 are each equipped with a separate PD signal control unit 17, which is used to stably control the output power, wavelength, frequency and other parameters of the first or second laser beam. The first PBS module 6 and the second PBS module 13 can filter stray light from the first laser beam and the second laser beam, respectively. The first green light frequency doubling module 7 and the second green light frequency doubling module 14 can frequency double the first laser beam and the second laser beam to become green light, respectively. The first laser beam, after being frequency doubled by the first green light frequency doubling module 7, is then frequency doubled by the first ultraviolet light frequency doubling module 8 to become violet light. Similarly, the second laser beam, after being frequency doubled by the second green light frequency doubling module 14, is then frequency doubled by the second ultraviolet light frequency doubling module 15 to become violet light. Finally, the first laser beam, after being frequency doubled by the first green light frequency doubling module 7 and the first ultraviolet light frequency doubling module 8, becomes violet light and is then split and output by the first beam splitter 9. The second laser beam, after being frequency doubled by the second green light frequency doubling module 14 and the second ultraviolet light frequency doubling module 15, becomes violet light and is then split and output by the second beam splitter 16. The first green light frequency doubling module 7, the second green light frequency doubling module 14, the first red light frequency doubling module 18, the second red light frequency doubling module 19, the first violet light frequency doubling module, and the second violet light frequency doubling module are all frequency doubling crystals.
[0052] Traditional external optical path frequency doubling and splitting relies on a frequency doubling crystal located outside the resonant cavity, resulting in a bottleneck in conversion efficiency. External crystals are also susceptible to interference; improper handling of excess light generates heat, affecting stability. Interface loss and damage are also significant issues. Traditional prism coupling introduces heterogeneous interfaces, increasing optical loss and becoming a weak point for laser damage, lowering the device damage threshold by more than an order of magnitude compared to crystals. Furthermore, excessive heat management is problematic; filters and attenuators absorb excess light and convert it into heat, making them prone to damage and affecting laser stability. The system also suffers from poor compactness. In contrast, in this embodiment, the frequency doubling crystal is located inside the resonant cavity, allowing direct use of the highly energy-density fundamental frequency light circulating within the cavity. This results in less laser loss, higher conversion efficiency, stronger anti-interference capabilities, and better stability. The internal housing 28 further avoids external signal interference. The internal emission source, first ultraviolet optical path structure, and second ultraviolet optical path structure are compact and integrated, leading to significantly higher conversion efficiency. This embodiment utilizes the extremely high fundamental frequency light power density within the cavity for frequency doubling. Power and stability can be optimized through design (such as gas micro-circulation) to achieve high-power, high-stability output. By employing intracavity gas microcirculation systems, intracavity non-metallization techniques, and optical path compensation techniques, intracavity volatiles can be effectively managed, and resonant cavity offset sensitivity can be reduced, thereby ensuring long-term power stability in this embodiment. This embodiment reduces external discrete components, improving the system's anti-interference capability and reliability.
[0053] In this embodiment, the internal housing 28, the first beam splitter 9, and the second beam splitter 16 are each provided with a laser output port. Each laser output port corresponds to a beam splitting component. The laser beam output from the laser output port is output from the laser output unit 27 after passing through the beam splitting component. Each beam splitting component corresponds to a laser output unit 27. Specifically, after the laser beam is emitted, it is emitted from the laser output port to the first beam splitting reflector 20 and then transmitted to the half-wave plate. This is mainly used to control and change the polarization state of the laser beam. Then, it is split into two laser beams by the second-stage beam splitter 22 (the second beam splitter selects a beam splitter). One of the beams is split by the third-stage beam splitter 24 to form two laser beams, which are simultaneously transmitted to the beam expander 25. The laser beam through the beam expander 25 passes through the fourth-stage beam splitter and the beam shaper 26 to form two laser beams. Finally, the laser beam output from one laser output port is split into two beams after passing through the beam splitting component. Four laser beams are transmitted to the laser output unit 27 for output. These four laser beams are focused onto the working surface by a galvanometer and a field mirror. Another laser beam is split by a second-stage beam splitter 22 (second-stage beam splitter mirror). This beam is reflected sequentially by a second, third, and fourth beam splitter mirror. The fourth beam splitter mirror is mounted on a precision beam splitting distance adjustment platform 231. After precision adjustment of the beam splitting distance, the single-beam laser beam reflected by the fourth beam splitter mirror is transmitted to a third-stage beam splitter 24 for splitting into two laser beams. These two beams are then simultaneously transmitted to a beam expander 25. The two laser beams from the beam expander 25 pass through a fourth-stage beam splitter and a beam shaper 26 to form four laser beams. The precision beam splitting distance adjustment platform 231 can be equipped with a motor or other drive structure to oscillate the fourth beam splitter mirror. This embodiment can realize multiple laser beams, and this solution is compatible with one to eight laser beam outputs. That is, one laser unit can output up to eight laser beams for processing. That is, the first laser beam can be split into multiple laser beams by a beam splitter, and the second laser beam can be split into multiple laser beams by another beam splitter, such as... Figure 2 Each of the upper and lower parts is equipped with a beam splitting component, corresponding to the first laser beam output by the first beam splitter 9 and the second laser beam output by the second beam splitter 16, respectively.
[0054] A unit consisting of a four-stage beam splitter and a beam shaper 26 has a beam shaping function on one side and a beam splitting function on the other. The beam shaper can shape the beam into a circular, square, or stripe beam. The beam splitting function on the other side can be set according to requirements. This solution uses two-way beam splitting, which can achieve a beam spot size of 150*150um. This device can be used for normal operation and processing in the 266-106400nm wavelength band.
[0055] The beam splitting spacing precision adjustment platform 231 can adjust the beam spacing according to requirements, achieving adjustments from μm to mm. This device can operate normally in the 266-106400nm wavelength range. The laser beam sequentially passes through the second, third, and fourth beam splitting mirrors. The beam splitting spacing precision adjustment platform 231 can adjust the position of the fourth beam splitting mirror, thereby adjusting the horizontal and vertical beam level. By adjusting the position and state of the fourth beam splitting mirror, the beam spot is ensured to be parallel and incident into the third beam splitter for splitting. A shaping mirror can be installed in the third beam splitter, and the beam then enters the beam expander 25. All of these components can operate normally in the 266-106400nm wavelength range. Each beam splitting component adjusts the splitting ratio by changing the spacing between the optical components, enabling the output of thirty-six laser beams instead of two. Figure 1 The direction of the middle arrow indicates the output direction of the first and second laser beams.
[0056] The three-stage beam splitter 24 can split the transmitted single laser beam into two laser beams through an optical diffraction device (DOE). The beam splitting can be designed according to needs. This device can be used to operate and process normally in the 266-106400nm wavelength band.
[0057] An online power detection energy feedback unit 29 can be installed on one side of the internal housing 28. A beam splitting heat dissipation unit can also be installed on one side of the internal housing 28 to ensure better heat dissipation for the beam splitting component and the internal housing 28, thus maximizing the stability and consistency of the optical path. A heat sink with inserts can be selected. An online power meter can be used to ensure that each laser output from the laser output port is consistent. Real-time calibration can be performed using the power detected by the power meter and the set power to form a closed-loop power feedback, ensuring consistent and stable processing results. A half-wave plate is a key optical element, mainly used to control and change the polarization state of light. Changing the polarization direction of light: By introducing a phase difference between orthogonal polarization components, a half-wave plate can precisely control the polarization direction of light. Adjusting the polarization state of laser output: In semiconductor lasers, half-wave plates are used to adjust the direction of linearly polarized light, ensuring its compatibility with subsequent optical components.
[0058] In this embodiment, a half-wave plate can be used to control and compensate for the polarization state, reduce the depolarization effect, and improve transmission efficiency.
[0059] In this embodiment, the beam-splitting spacing precision adjustment platform 231 can be precisely adjusted by electronic control, achieving micrometer-level adjustment. The beam spacing can be adjusted according to requirements, from micrometer to millimeter. This device can be used for normal operation and processing in the 266-106400nm wavelength band.
[0060] The technical means disclosed in this utility model are not limited to those disclosed in the above embodiments, but also include technical solutions composed of any combination of the above technical features. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of this utility model, and these improvements and modifications are also considered within the scope of protection of this utility model.
Claims
1. A laser-isolated passivated laser optical path structure for crystalline silicon solar cells, characterized in that, include: The internal emission source includes a seed source for emitting the total laser beam, a pre-amplification unit, and a main beam splitter; The first ultraviolet light path structure includes a first split amplifier, a first acousto-optic modulator, a first PBS module, a first green light frequency doubling module, a first ultraviolet frequency doubling module, and a first beam splitter arranged sequentially. The second ultraviolet light path structure includes, in sequence, a second split mirror, a second split amplifier, a second acousto-optic modulator, a second PBS module, a second green light frequency doubling module, a second ultraviolet frequency doubling module, and a second beam splitter.
2. The laser-isolated passivated laser optical path structure for crystalline silicon solar cells according to claim 1, characterized in that, Both the output terminals of the first ultraviolet light path structure and the output terminals of the second ultraviolet light path structure are equipped with PD signal control units.
3. The laser-isolated passivated laser optical path structure for crystalline silicon solar cells according to claim 1, characterized in that, The main beam splitter is an infrared beam splitter, which consists of an infrared mirror unit and a beam splitter unit.
4. The laser-isolated passivated laser optical path structure for crystalline silicon solar cells according to claim 1, characterized in that, It also includes a first red light frequency multiplier module disposed in front of the first split amplifier and a second red light frequency multiplier module disposed in front of the second split reflector.
5. The laser-isolated passivated laser optical path structure for crystalline silicon solar cells according to claim 1, characterized in that, Both the first ultraviolet light path structure and the second ultraviolet light path structure are respectively provided with a beam splitting component; The beam splitting assembly includes, in sequence, a first beam splitting mirror, a half-wave mirror, a second-stage beam splitter, a reflection adjustment module, a third-stage beam splitter, a beam expander, a fourth-stage beam splitter, and a beam shaper. Each of the beam-splitting components is provided with at least one laser output unit; The reflection adjustment module is equipped with a precision beam splitting distance adjustment platform to adjust the beam splitting distance.
6. The laser-isolated passivated laser optical path structure for crystalline silicon solar cells according to claim 5, characterized in that, The reflection adjustment module includes a second beam-splitting mirror, a third beam-splitting mirror, and a fourth beam-splitting mirror; The beam splitting spacing precision adjustment platform is located between the third beam splitting reflector and the third-stage beam splitter.
7. The laser-isolated passivated laser optical path structure for crystalline silicon solar cells according to claim 6, characterized in that, The laser output unit includes a galvanometer and a field mirror.
8. The laser-isolated passivated laser optical path structure for crystalline silicon solar cells according to claim 1, characterized in that, It also includes an internal shell; The internal emission source, the first ultraviolet light path structure, and the second ultraviolet light path structure are all located inside the internal housing.
9. The laser-isolated passivated laser optical path structure for crystalline silicon solar cells according to claim 8, characterized in that, It also includes an online power monitoring energy feedback device, which is disposed on one side of the inner housing.