Apparatus for manufacturing semiconductor chips

Abstract

The utility model provides a kind of preparation device of semiconductor chip, including unkeying unit and cleaning unit, unkeying unit includes vacuum adsorption platform and isolation unit, isolation unit is arranged on vacuum adsorption platform, then unkeying is carried out, then through the setting cleaning unit makes that rotation wafer carries out dewax cleaning and subsequent wafer operation, when dewax cleaning is carried out, there is the obstruction of isolation unit, and using wafer rotation mode greatly reduces the pollution caused by wax reverse sticking of wafer back due to positive cleaning wafer dewax, simultaneously, since the existence of isolation unit, after dewax cleaning is completed, equipment closes vacuum, vacuum adsorption platform and the vacuum force of wafer immediately release, wafer can be easily removed from vacuum adsorption platform, greatly reduce the difficulty and fragment proportion of wafer.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and in particular to a semiconductor chip fabrication apparatus. Background Technology

[0002] III-V compound semiconductors possess characteristics such as high power density, low energy consumption, high temperature resistance, and high luminous efficiency. In recent years, their advantages have become increasingly significant in applications such as radio frequency, power devices, optoelectronics, and defense. To significantly reduce contamination issues in the manufacturing process, wafer breakage rates, and improve operability, in mass production, the front-end process often involves completing the integrated circuit chip structure on the wafer, followed by bonding, thinning, back plating, debonding, and cleaning to complete the back-end processes.

[0003] Traditional compound semiconductor chips are thinned and then directly debonded using microporous ceramic disks, followed by static dewaxing. During single-wafer cleaning, the debonded wafer, along with the ceramic disk, is placed on a cleaning stage, and a vacuum is used to hold the microporous ceramic disk and the wafer in place. This inevitably causes the dewaxed wax to easily adhere to the back of the wafer due to the vacuum, resulting in wax particle residue and contamination. Furthermore, the vacuum force is difficult to release after cleaning, making it difficult to remove the wafer from the ceramic disk, leading to poor maneuverability and a high risk of fragmentation. Utility Model Content

[0004] The purpose of this invention is to provide a semiconductor chip fabrication apparatus to solve the problems of existing semiconductor chip structures, such as wax sticking to the back of the wafer during the cleaning process, causing contamination, and the difficulty in releasing the vacuum between the wafer and the ceramic disk after cleaning, leading to easy wafer breakage.

[0005] To solve the above-mentioned technical problems, this utility model provides a semiconductor chip fabrication apparatus, which includes: The debonding unit includes a vacuum adsorption platform and an isolation unit. The isolation unit is disposed on the vacuum adsorption platform and has several through holes. The vacuum adsorption platform vacuum adsorbs the wafer bonded to the quartz stone onto the isolation unit. The cleaning unit is used to drive the debonding unit that adsorbs the wafer to rotate and simultaneously spray the side of the wafer away from the vacuum adsorption platform.

[0006] Optionally, the isolation unit includes an isolation pad paper, which is laid flat on the vacuum adsorption platform.

[0007] Optionally, the vacuum adsorption platform is circular.

[0008] Optionally, the vacuum adsorption platform includes a microporous ceramic disk.

[0009] Optionally, the cleaning unit includes a vacuum stage and a nozzle. The vacuum stage carries the vacuum adsorption platform and is rotatable. The spray tip of the nozzle faces the wafer.

[0010] Optionally, the vacuum stage rotates around its own central axis, and the vacuum stage is coaxial with the vacuum adsorption platform supported by the vacuum stage.

[0011] Optionally, the number of nozzles may be one or more.

[0012] Optionally, the nozzle sequentially sprays acetone, isopropanol, and deionized water onto the wafer.

[0013] Optionally, the nozzle is arc-shaped and faces the center of the wafer.

[0014] Optionally, the rotation speed of the cleaning unit is 800~2000 rpm.

[0015] The semiconductor chip fabrication apparatus described above has an isolation unit set up on the vacuum adsorption platform before debonding. Then, a cleaning unit is set up to rotate the wafer for dewaxing and subsequent wafer unloading. During dewaxing, the isolation unit blocks the process, and the wafer rotation method greatly reduces the contamination caused by wax back-adhesion on the back of the wafer due to the front-side cleaning of the wafer. At the same time, due to the presence of the isolation unit, after the equipment is closed after dewaxing, the vacuum force between the vacuum adsorption platform and the wafer is immediately released, and the wafer can be easily removed from the vacuum adsorption platform, greatly reducing the difficulty of wafer removal and the proportion of fragments. Attached Figure Description

[0016] Those skilled in the art will understand that the accompanying drawings are provided to better understand the present invention and do not constitute any limitation on the scope of the present invention. Wherein: Figure 1 This is a schematic diagram of a wafer located on a vacuum adsorption platform according to an embodiment of the present invention; Figure 2 This is a schematic diagram of a debonding unit according to an embodiment of the present invention; Figure 3 This is a schematic diagram of the debonding unit and the cleaning unit according to an embodiment of the present invention.

[0017] In the attached image:

[0018] 10-Vacuum adsorption platform; 20-Isolation unit; 30-Wafer; 40-Quartz stone; 50-Vacuum stage; 60-Nozzle. Detailed Implementation

[0019] To make the objectives, advantages, and features of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to facilitate and clarify the explanation of the objectives of the embodiments of this utility model. Furthermore, the structures shown in the drawings are often part of the actual structure. In particular, different drawings may emphasize different aspects and sometimes use different scales.

[0020] As used in this invention, the singular forms “a,” “an,” and “the” include plural objects; the term “or” is generally used to include the meaning of “and / or”; the term “a number” is generally used to include the meaning of “at least one”; and the term “at least two” is generally used to include the meaning of “two or more”. Furthermore, the terms “first,” “second,” and “third” are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with “first,” “second,” or “third” may explicitly or implicitly include one or at least two of that feature. “One end” and “the other end,” as well as “proximal end” and “far end,” generally refer to two corresponding parts, including not only endpoints. The terms “installed,” “connected,” and “joined” should be interpreted broadly; for example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal connection of two elements or the interaction between two elements. Furthermore, as used in this invention, the phrase "one element is disposed on another element" generally only indicates that there is a connection, coupling, cooperation, or transmission relationship between the two elements. This connection, coupling, cooperation, or transmission can be direct or indirect through an intermediate element, and should not be construed as indicating or implying a spatial positional relationship between the two elements. That is, one element can be located arbitrarily inside, outside, above, below, or to one side of the other element, unless otherwise explicitly stated. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0021] Semiconductor chip fabrication methods typically include the following steps: providing a substrate (e.g., a GaAs substrate); forming a semiconductor structure on the substrate, specifically, fabricating the chip's various layers on the substrate using deposition, photolithography, and etching processes; forming pads on the semiconductor structure and the substrate; using high-temperature wax to bond the formed integral structure (wafer) to quartz and thinning the wafer to the required thickness (e.g., 50~100um); forming a back metal layer on the substrate; photolithographically etching dicing patterns on the back of the wafer; debonding and dewaxing the wafer and quartz; performing electrical testing on the wafer; and finally, laser dicing, film expansion, and visual inspection before warehousing.

[0022] See Figures 1 to 3 This invention schematically provides a semiconductor chip fabrication apparatus, including a debonding unit and a cleaning unit. The debonding unit includes a vacuum adsorption platform 10 and an isolation unit 20. The isolation unit 20 is disposed on the vacuum adsorption platform 10 and has several breathable through holes. The vacuum adsorption platform 10 vacuum adsorbs a wafer 30 bonded to quartz 40, such as sapphire, onto the isolation unit 20. The temperature of the debonding unit is adjusted to a set temperature to perform debonding. The cleaning unit is used to rotate the debonding unit that adsorbs the wafer 30 and simultaneously spray clean the side of the wafer 30 facing away from the vacuum adsorption platform 10. Thus, by setting an isolation unit 20 on the vacuum adsorption platform 10, debonding is performed, and then a cleaning unit is set up to allow the rotating wafer 30 to be dewaxed and cleaned before subsequent wafer unloading. During the dewaxing process, the isolation unit 20 acts as a barrier, and the rotation of the wafer 30 greatly reduces the contamination caused by wax sticking to the back of the wafer 30 due to the front-side cleaning of the wafer 30. At the same time, due to the presence of the isolation unit 20, after the equipment is closed after the dewaxing process, the vacuum force between the vacuum adsorption platform 10 and the wafer 30 is immediately released, and the wafer 30 can be easily removed from the vacuum adsorption platform 10, greatly reducing the difficulty of wafer removal and the proportion of fragments.

[0023] In one embodiment, the isolation unit 20 includes an isolation pad paper, which is laid flat and adhered to the vacuum adsorption platform 10. The isolation paper is heat-resistant, breathable, requires high flatness, is free of particles, and has low water absorption.

[0024] Optionally, the vacuum adsorption platform 10 is circular, and when the wafer 30 is adsorbed on the vacuum adsorption platform 10, the wafer 30 is coaxial with the vacuum adsorption platform 10.

[0025] In one embodiment, the vacuum adsorption platform 10 includes a microporous ceramic disk.

[0026] See Figure 3The cleaning unit includes a vacuum stage 50 and a nozzle 60. The vacuum stage 50 supports and holds the vacuum adsorption platform 10 in a vacuum. The vacuum stage 50 is rotatable, and the spray tip of the nozzle 60 faces the wafer 30. While the rotation of the vacuum stage 50 drives the debonding unit to rotate, the nozzle 60 simultaneously sprays and cleans the wafer 30. The isolation unit 20 provides a barrier, and the rotation of the wafer 30 significantly reduces contamination caused by wax back-adhesion on the back of the wafer 30 due to wax removal during front-side cleaning.

[0027] In this embodiment, the vacuum stage 50 rotates around its own central axis, and the vacuum stage 50 is coaxial with the vacuum adsorption platform 10 supported by the vacuum stage 50.

[0028] Optionally, the number of nozzles 60 may be one or more.

[0029] Optionally, nozzle 60 sprays acetone, isopropanol and deionized water sequentially onto wafer 30.

[0030] Optionally, the nozzle 60 is arc-shaped and faces the center of the wafer 30.

[0031] Optionally, the rotation speed of the cleaning unit is 800~2000 rpm, that is, the rotation speed of the vacuum stage 50 is 800~2000 rpm.

[0032] Although the present invention has been disclosed above with reference to preferred embodiments, these embodiments are not intended to limit the present invention. For any person skilled in the art, many possible variations and modifications can be made to the technical solutions of the present invention based on the disclosed technical content, or equivalent embodiments can be modified accordingly, without departing from the scope of the present invention. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention, without departing from the content of the present invention, shall still fall within the protection scope of the present invention.

Claims

1. An apparatus for fabricating a semiconductor chip, characterized in that, include: The debonding unit includes a vacuum adsorption platform and an isolation unit. The isolation unit is disposed on the vacuum adsorption platform and has several through holes. The vacuum adsorption platform vacuum adsorbs the wafer bonded to the quartz stone onto the isolation unit. The cleaning unit is used to drive the debonding unit that adsorbs the wafer to rotate and simultaneously spray the side of the wafer away from the vacuum adsorption platform.

2. The semiconductor chip fabrication apparatus according to claim 1, characterized in that, The isolation unit includes an isolation pad paper, which is laid flat on the vacuum adsorption platform.

3. The semiconductor chip fabrication apparatus according to claim 1, characterized in that, The vacuum adsorption platform is circular.

4. The semiconductor chip fabrication apparatus according to claim 1, characterized in that, The vacuum adsorption platform includes a microporous ceramic disk.

5. The semiconductor chip fabrication apparatus according to claim 1, characterized in that, The cleaning unit includes a vacuum stage and a nozzle. The vacuum stage supports the vacuum adsorption platform and is rotatable. The spray tip of the nozzle faces the wafer.

6. The semiconductor chip fabrication apparatus according to claim 5, characterized in that, The vacuum stage rotates around its own central axis, and the vacuum stage is coaxial with the vacuum adsorption platform supported by the vacuum stage.

7. The semiconductor chip fabrication apparatus according to claim 5, characterized in that, The number of nozzles is one or more.

8. The semiconductor chip fabrication apparatus according to claim 5, characterized in that, The nozzle sequentially sprays acetone, isopropanol, and deionized water onto the wafer.

9. The semiconductor chip fabrication apparatus according to claim 5, characterized in that, The nozzle is arc-shaped and faces the center of the wafer.

10. The semiconductor chip fabrication apparatus according to claim 1, characterized in that, The rotation speed of the cleaning unit is 800~2000 rpm.

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