Electronic package and heat dissipation structure thereof
Patent Information
- Application Number
- CN202521324479.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Priority Date
- 2025-06-17
- Filing Date
- 2025-06-26
- Publication Date
- 2026-09-04
- Estimated Expiration
- 2035-06-26
AI Technical Summary
[0005]然而，随着该半导体晶片11的功能需求愈来愈多，其接点(I/O)数也愈来愈多，且所产生的热能也越来越高，一般为金属铜材质所制得的散热件13已无法因应高散热需求
[0017]本申请的电子封装件及其散热结构主要在散热结构需加强散热(如接触发热源)的区域设置散热强化部，据以在该区域掺杂高导热材料或设置高导热材料，而无须整体散热结构全部以高导热材料取代，以降低散热结构成本，同时解决现有散热结构散热不足的问题。
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Figure CN224722276U_ABST
Abstract
Description
Technical Field
[0001] This application relates to a semiconductor packaging structure, and more particularly to an electronic package and its heat dissipation structure. Background Technology
[0002] As electronic products demand higher functionality and processing speeds, semiconductor chips, as core components of these products, need to have a higher density of electronic components and circuits. Consequently, semiconductor chips generate significantly more heat during operation. Furthermore, the encapsulating colloids traditionally used to cover these semiconductor chips are poor heat transfer materials with a thermal conductivity of only 0.8 W / m·K (i.e., poor heat dissipation efficiency). Therefore, if the heat generated by the semiconductor chip cannot be effectively dissipated, it will damage the semiconductor chip and compromise product reliability.
[0003] Therefore, in order to quickly dissipate heat to the outside, the industry usually equips semiconductor packages with heat sinks or heat spreaders. These heat sinks are typically attached to the back of the chip via a heat dissipation material, such as a thermal interface material (TIM), so that the heat generated by the semiconductor chip can be dissipated through the heat dissipation material and the heat sink. Furthermore, the top surface of the heat sink is usually exposed to the encapsulation material or directly exposed to the atmosphere to achieve better heat dissipation.
[0004] like Figure 1 As shown, in the manufacturing method of a conventional semiconductor package 1, a semiconductor wafer 11 is first disposed on a packaging substrate 10 with its active surface 11a using a flip-chip bonding method (i.e., through conductive bumps 110 and adhesive 111). Then, a heat sink 13 is bonded to the non-active surface 11b of the semiconductor wafer 11 via a heat sink 12 with its top plate 130 attached to it. The support feet 131 of the heat sink 13 are mounted on the packaging substrate 10 via an adhesive layer 14. During operation, the heat generated by the semiconductor wafer 11 is conducted through the non-active surface 11b and the heat sink 12 to the top plate 130 of the heat sink 13 for dissipation to the outside of the semiconductor package 1.
[0005] However, as the functional requirements of the semiconductor chip 11 increase, the number of its contacts (I / O) also increases, and the heat generated also increases. The heat sink 13, which is generally made of copper, can no longer meet the high heat dissipation requirements.
[0006] Therefore, overcoming the various problems of the existing technologies has become an urgent issue to be addressed. Utility Model Content
[0007] In view of the various deficiencies of the prior art, this application provides a heat dissipation structure, a heat dissipation part, and a heat dissipation enhancement part, which is thermally connected to an electronic component and adjacent to the heat dissipation part, and the thermal conductivity of the heat dissipation enhancement part is greater than that of the heat dissipation part.
[0008] This application further provides an electronic package, including: a carrier; an electronic component disposed on the carrier; and a heat dissipation structure disposed on the electronic component and including a heat dissipation portion and a heat dissipation enhancement portion, wherein the heat dissipation enhancement portion is thermally connected to the electronic component and adjacent to the heat dissipation portion, and the thermal conductivity of the heat dissipation enhancement portion is greater than the thermal conductivity of the heat dissipation portion.
[0009] In the aforementioned electronic packaging components and their heat dissipation structures, the carrier is a substrate or an intermediary plate.
[0010] In the aforementioned electronic package and its heat dissipation structure, the carrier has a first side and a second side opposite to each other, and a crystal placement area for receiving the electronic component is provided on the first side.
[0011] The aforementioned electronic package and its heat dissipation structure also include a heat conductor disposed between the electronic component and the heat dissipation structure. The heat conductor is a thermally conductive interface material.
[0012] In the aforementioned electronic package and its heat dissipation structure, the heat dissipation structure is provided with a corresponding heat dissipation enhancement part corresponding to the position and number of the electronic components.
[0013] In the aforementioned electronic package and its heat dissipation structure, the heat dissipation part and the heat dissipation enhancement part are an integral metal plate, and the heat dissipation enhancement part is formed by doping the metal with a highly thermally conductive material. Furthermore, the heat dissipation enhancement part is located at the center of the metal plate, while the heat dissipation part is located at the periphery of the metal plate. Further, the material forming the heat dissipation part is copper, and the material forming the heat dissipation enhancement part is copper doped with diamond particles, graphene, carbon nanotubes, or metallic silver.
[0014] In the aforementioned electronic package and its heat dissipation structure, the heat dissipation structure further includes a support portion for supporting the heat dissipation portion and the heat dissipation enhancement portion. The heat dissipation portion, the heat dissipation enhancement portion, and the support portion are integrally formed from a metal part, and a highly thermally conductive material is doped at the position corresponding to the thermal connection of the electronic component to form the heat dissipation enhancement portion.
[0015] In the aforementioned electronic package and its heat dissipation structure, the heat dissipation structure further includes an anti-oxidation layer disposed on the outer surface of the heat dissipation part and the heat dissipation enhancement part.
[0016] In the aforementioned electronic package and its heat dissipation structure, the heat dissipation reinforcement is composed of a high thermal conductivity material. This heat dissipation reinforcement is joined to the heat dissipation component by welding, forging, fitting, or bonding. The high thermal conductivity material can be diamond particles, graphene, carbon nanotubes, or metallic silver.
[0017] The electronic package and its heat dissipation structure of this application mainly set heat dissipation enhancement parts in areas where heat dissipation needs to be strengthened (such as in contact with heat sources). Based on this, high thermal conductivity materials are doped or set in these areas, without having to replace the entire heat dissipation structure with high thermal conductivity materials, thereby reducing the cost of the heat dissipation structure and solving the problem of insufficient heat dissipation of existing heat dissipation structures. Attached Figure Description
[0018] Figure 1 This is a cross-sectional schematic diagram of an existing semiconductor package.
[0019] Figure 2 This is a cross-sectional schematic diagram of the first embodiment of the heat dissipation structure of this application.
[0020] Figure 3A and Figure 3B This is a cross-sectional schematic diagram of the first embodiment of the electronic package of this application.
[0021] Figure 4A and Figure 4B This is a cross-sectional and planar schematic diagram of the second embodiment of the heat dissipation structure of this application.
[0022] Figure 5A and Figure 5B This is a cross-sectional schematic diagram of the second embodiment of the electronic package of this application.
[0023] Explanation of reference numerals in the attached figures
[0024] 1 Semiconductor package
[0025] 10 Packaging substrate
[0026] 11 Semiconductor wafers
[0027] 11a Working surface
[0028] 11b Non-operating surface
[0029] 110 Conductive bump
[0030] 111 Base Rubber
[0031] 12 Heat sink
[0032] 13 Heat sink
[0033] 130 Top Film
[0034] 131 Supporting foot
[0035] 14 Adhesive layer
[0036] 2,3 Heat dissipation structure
[0037] 2A, 2B, 3A, 3B electronic packages
[0038] 20, 30 Heat dissipation section
[0039] 21,31 Heat dissipation enhancement section
[0040] 22 Support section
[0041] 23 Antioxidant layer
[0042] 4. Bearing components
[0043] 41 First side
[0044] 410 Crystal Placement Area
[0045] 42 Second side
[0046] 5 Electronic components
[0047] 51. Surface of Action
[0048] 52 Non-acting surfaces
[0049] 53 Conductive bumps
[0050] 6. Heat conductor. Detailed Implementation
[0051] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification.
[0052] It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are merely for illustrative purposes to aid those skilled in the art in understanding and reading the content disclosed herein, and are not intended to limit the scope of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to size, without affecting the effectiveness and purpose of this application, should still fall within the scope of the technical content disclosed herein. Furthermore, the terms such as "above," "first," "second," and "a" used in this specification are merely for clarity of description and are not intended to limit the scope of this application. Changes or adjustments to their relative relationships, without substantially altering the technical content, should also be considered within the scope of this application's implementation.
[0053] Please see Figure 2 This is a cross-sectional schematic diagram of the heat dissipation structure 2 of this application. The heat dissipation structure 2 includes a heat dissipation part 20 and a heat dissipation enhancement part 21. The heat dissipation enhancement part 21 is used for thermal connection (contact) with a heat source such as an electronic component. The heat dissipation part 20 is adjacent to the heat dissipation enhancement part 21, and the thermal conductivity of the heat dissipation enhancement part is greater than that of the heat dissipation part.
[0054] In this embodiment, the heat dissipation part 20 and the heat dissipation enhancement part 21 are an integral metal plate (e.g., a copper plate). The heat dissipation enhancement part 21 is located approximately at the center of the metal plate, and the heat dissipation part 20 is located approximately at the periphery of the metal plate. The heat dissipation part 20 is made of copper metal with a thermal conductivity of approximately 385 W / mK. The heat dissipation enhancement part 21 is constructed by doping copper metal with a high thermal conductivity material, such as diamond particles, graphene, carbon nanotubes, or metallic silver, to serve as the heat dissipation enhancement part 21. The thermal conductivity of the diamond particles is approximately 2000 W / mK.
[0055] In addition, the heat dissipation structure 2 may also include a support portion 22, which extends outward from the heat dissipation portion 20 to support the heat dissipation portion 20 and the heat dissipation enhancement portion 21.
[0056] In this embodiment, the heat dissipation part 20, the heat dissipation enhancement part 21 and the support part 22 of the heat dissipation structure 2 can be integrally formed from a metal part (e.g., a copper metal part), and a high thermal conductivity material is doped at the position to be in contact with the heat source to form the heat dissipation enhancement part 21, thereby improving the heat dissipation efficiency.
[0057] In order to protect the heat dissipation structure 2 from oxidation caused by the external environment, an anti-oxidation layer 23, such as metallic nickel (Ni), can be formed on the outer surface of the heat dissipation part 20, the heat dissipation enhancement part 21 and the support part 22.
[0058] Accordingly, the heat dissipation structure 2 of this application mainly provides a heat dissipation enhancement part 21 (such as doped with high thermal conductivity material) in the area where heat dissipation needs to be enhanced (such as in contact with heat source), while the remaining parts still maintain the heat dissipation part 20 with good processability (such as copper metal parts), without having to replace the entire heat dissipation structure 2 with high thermal conductivity material, so as to reduce the cost of heat dissipation structure and solve the problem of insufficient heat dissipation of existing heat dissipation structures.
[0059] Please refer to the following at the same time. Figure 3A and Figure 3B This is a cross-sectional schematic diagram of the first embodiment of the electronic packages 2A and 2B of this application.
[0060] The electronic package 2A, 2B includes a carrier 4, an electronic component 5 disposed on the carrier, and a heat dissipation structure 2 disposed on the electronic component 5.
[0061] The carrier 4 is, for example, a substrate or interposer with or without a core layer, comprising at least one insulating layer and at least one circuit layer bonded to the insulating layer, and having opposing first sides 41 and second sides 42, with at least one crystal placement region 410 disposed on the first side 41. The circuit layer is formed of copper, and the insulating layer is formed of dielectric materials such as polybenzoxazole (PBO), polyimide (PI), prepreg (PP), or the outermost layer may be a green solder resist.
[0062] The electronic component 5 is placed in the crystal placement area 410 of the carrier 4 and is electrically connected to the carrier 4.
[0063] In this embodiment, the electronic component 5 is an active component, a passive component, or a combination thereof. The active component is, for example, a semiconductor wafer, while the passive component is, for example, a resistor, a capacitor, or an inductor. For example, the electronic component 5 is a semiconductor wafer having opposing active surfaces 51 and non-active surfaces 52. The active surface 51 has multiple electrode pads to be disposed on the first side 41 of the carrier 4 and electrically connected to the circuit layer by means of multiple conductive bumps 53, such as solder material, metal pillars, or others, using a flip-chip method. The conductive bumps are covered with an insulating material such as a primer or a non-conductive underfill film (NCF).
[0064] Additionally, the first side 41 of the carrier 4 may be provided with one or more crystal placement areas 410, so that an electronic component 5 (such as...) can be attached to the crystal placement area 410 of the carrier 4. Figure 3A ) or multiple electronic components 5 (such as Figure 3B ).
[0065] The heat dissipation structure 2 can be attached to the electronic component 5 via a heat conductor 6. The heat conductor 6 is located between the non-functional surface 52 of the electronic component 5 and the heat dissipation structure 2, so as to more efficiently conduct the heat generated by the electronic component 5 to the heat dissipation structure 2 and then dissipate it into the environment.
[0066] The heat conductor 6 is, for example, a thermal interface material (TIM) layer, the main material of which is indium (In) or indium silver (In / Ag) alloy, but this application is not limited thereto.
[0067] like Figure 3AAs shown, when an electronic component 5 is attached to the carrier 4, the heat dissipation structure 2 is provided with a corresponding heat dissipation enhancement part 21 corresponding to the position and number of the electronic component 5, so that the heat dissipation structure 2 is attached to the electronic component 5 through the heat conductor 6 via the heat dissipation enhancement part 21, so that the heat generated by the electronic component 5 during subsequent operation can be quickly dissipated to the outside through the heat conductor 6 and the heat dissipation enhancement part 21 (diamond particle) of the heat dissipation structure 2.
[0068] like Figure 3B As shown, when multiple electronic components 5 are attached to the carrier 4, the heat dissipation structure 2 is provided with multiple heat dissipation enhancement parts 21 corresponding to the position and number of the multiple electronic components 5, so that the heat dissipation structure 2 is attached to the multiple electronic components 5 through the multiple heat dissipation enhancement parts 21 and multiple heat conductors 6.
[0069] In addition, the heat dissipation structure 2 can be simultaneously mounted on the carrier 4 and surround the electronic component 5 via the support portion 22. In one embodiment, the support portion 22 can be annular or columnar, but this application is not limited thereto.
[0070] It should be understood that in other embodiments, the heat dissipation structure 2 may omit the support part 22 and directly attach its heat dissipation enhancement part 21 to the electronic component 5.
[0071] Please see Figure 4A and Figure 4B This is a cross-sectional schematic diagram of the heat dissipation structure 3 of this application. The heat dissipation structure 3 includes a heat dissipation part 30 and a heat dissipation enhancement part 31 for contacting a heat source (such as an electronic component).
[0072] The heat dissipation structure 3 in this embodiment is largely the same as that in the previous embodiment. The main difference is that the heat dissipation area of the heat dissipation structure 3 that needs to be strengthened is replaced with other materials to become the heat dissipation reinforcement part 31.
[0073] In this embodiment, the heat dissipation enhancement part 31 is composed of a high thermal conductivity material (such as diamond particles / graphene / carbon nanotubes / metallic silver, etc.). The thermal conductivity of the heat dissipation enhancement part 31 is greater than that of the heat dissipation part 30. It can be joined to the heat dissipation part 30 (copper metal part) by welding, forging, fitting or bonding to form an integral heat dissipation structure 3.
[0074] Please see Figure 5A and Figure 5B This is a cross-sectional schematic diagram of the second embodiment of the electronic package 3A, 3B of this application. The electronic package 3A, 3B includes a carrier 4, an electronic component 5 disposed on the carrier, and the aforementioned heat dissipation structure 3. The carrier 4 and the electronic component 5 are substantially the same as those in the first embodiment, and will not be described again here.
[0075] like Figure 5AAs shown, the heat dissipation structure 3 is provided with a heat dissipation enhancement part 31 corresponding to the position and number of electronic components 5, so that the heat dissipation structure 3 is connected to the electronic component 5 through the heat dissipation enhancement part 31 and the heat conductor 6, so that the heat generated by the electronic component 5 during subsequent operation can be quickly dissipated to the outside through the heat conductor 6 and the heat dissipation enhancement part 31 (high thermal conductivity material) of the heat dissipation structure 3. Or as... Figure 5B As shown, when multiple electronic components 5 are attached to the carrier 4, the heat dissipation structure 3 is provided with multiple heat dissipation enhancement parts 31 corresponding to the position and number of the multiple electronic components 5, so that the heat dissipation structure 3 is attached to the multiple electronic components 5 through the multiple heat dissipation enhancement parts 31 and multiple heat conductors 6.
[0076] In summary, the electronic package and its heat dissipation structure of this application mainly provide heat dissipation enhancement parts in areas where heat dissipation needs to be strengthened (such as in contact with heat sources). Based on this, high thermal conductivity materials are doped or high thermal conductivity materials are provided in these areas, without having to replace the entire heat dissipation structure with high thermal conductivity materials, thereby reducing the cost of the heat dissipation structure and solving the problem of insufficient heat dissipation of existing heat dissipation structures.
[0077] The above embodiments are used to illustrate the principles and effects of this application, and are not intended to limit this application. Those skilled in the art can modify the above embodiments without departing from the spirit and scope of this application. Therefore, the scope of protection of this application should be as set forth in the claims.
Claims
1. A heat dissipation structure, characterized in that, include: Heat dissipation section; as well as A heat dissipation enhancement section is thermally connected to and adjacent to an electronic component, and the thermal conductivity of the heat dissipation enhancement section is greater than that of the heat dissipation section. The heat dissipation part and the heat dissipation enhancement part are an integral metal plate, and the heat dissipation enhancement part is composed of a metal doped with a highly thermally conductive material.
2. The heat dissipation structure as described in claim 1, characterized in that, The heat dissipation enhancement part is located at the center of the metal plate, and the heat dissipation part is located at the periphery of the metal plate.
3. The heat dissipation structure as described in claim 1, characterized in that, The material forming the heat dissipation part is copper metal, and the material forming the heat dissipation enhancement part is copper metal doped with diamond particles, graphene, carbon nanotubes or metallic silver.
4. The heat dissipation structure as described in claim 1, characterized in that, The heat dissipation structure also includes a support for supporting the heat dissipation part and the heat dissipation enhancement part.
5. The heat dissipation structure as described in claim 4, characterized in that, The heat dissipation part, the heat dissipation enhancement part, and the support part are integrally formed from a metal part, and a high thermal conductivity material is doped at the position corresponding to the thermal connection of the electronic component to form the heat dissipation enhancement part.
6. The heat dissipation structure as described in claim 1, characterized in that, The heat dissipation structure also includes an anti-oxidation layer disposed on the outer surface of the heat dissipation part and the heat dissipation enhancement part.
7. A heat dissipation structure, characterized in that, include: Heat dissipation section; as well as A heat dissipation enhancement section is thermally connected to and adjacent to an electronic component, and the thermal conductivity of the heat dissipation enhancement section is greater than that of the heat dissipation section. The heat dissipation enhancement section is composed of a material with high thermal conductivity.
8. The heat dissipation structure as described in claim 7, characterized in that, The heat dissipation reinforcement is joined to the heat dissipation part by welding, forging, fitting or bonding.
9. The heat dissipation structure as described in claim 7, characterized in that, The high thermal conductivity material is diamond particles, graphene, carbon nanotubes, or metallic silver.
10. An electronic package, characterized in that, include: Load-bearing components; Electronic components are mounted on this carrier. as well as A heat dissipation structure is disposed on the electronic component and includes a heat dissipation part and a heat dissipation enhancement part, wherein the heat dissipation enhancement part is thermally connected to the electronic component and adjacent to the heat dissipation part, and the thermal conductivity of the heat dissipation enhancement part is greater than that of the heat dissipation part. The heat dissipation part and the heat dissipation enhancement part are an integral metal plate, and the heat dissipation enhancement part is composed of a metal doped with a highly thermally conductive material.
11. The electronic package as claimed in claim 10, characterized in that, The support component is a substrate or an interlayer plate.
12. The electronic package as claimed in claim 10, characterized in that, The carrier has a first side and a second side opposite to each other, and a crystal placement area for placing the electronic component is provided on the first side.
13. The electronic package as claimed in claim 10, characterized in that, The electronic package also includes a heat conductor disposed between the electronic component and the heat dissipation structure.
14. The electronic package as claimed in claim 13, characterized in that, The heat conductor is a thermally conductive interface material.
15. The electronic package as claimed in claim 10, characterized in that, The heat dissipation structure has corresponding heat dissipation enhancement parts for the position and number of electronic components.
16. The electronic package as claimed in claim 10, characterized in that, The heat dissipation enhancement part is located at the center of the metal plate, and the heat dissipation part is located at the periphery of the metal plate.
17. The electronic package as claimed in claim 10, characterized in that, The material forming the heat dissipation part is copper metal, and the material forming the heat dissipation enhancement part is copper metal doped with diamond particles, graphene, carbon nanotubes or metallic silver.
18. The electronic package as claimed in claim 10, characterized in that, The heat dissipation structure also includes a support for supporting the heat dissipation part and the heat dissipation enhancement part.
19. The electronic package as claimed in claim 18, characterized in that, The heat dissipation part, the heat dissipation enhancement part, and the support part are integrally formed from a metal part, and a high thermal conductivity material is doped at the position corresponding to the thermal connection of the electronic component to form the heat dissipation enhancement part.
20. The electronic package as claimed in claim 10, characterized in that, The heat dissipation structure also includes an anti-oxidation layer disposed on the outer surface of the heat dissipation part and the heat dissipation enhancement part.
21. An electronic package, characterized in that, include: Load-bearing components; Electronic components are mounted on this carrier. as well as A heat dissipation structure is disposed on the electronic component and includes a heat dissipation part and a heat dissipation enhancement part, wherein the heat dissipation enhancement part is thermally connected to the electronic component and adjacent to the heat dissipation part, and the thermal conductivity of the heat dissipation enhancement part is greater than that of the heat dissipation part. The heat dissipation enhancement section is composed of a material with high thermal conductivity.
22. The electronic package as claimed in claim 21, characterized in that, The heat dissipation reinforcement is joined to the heat dissipation part by welding, forging, fitting or bonding.
23. The electronic package as claimed in claim 21, characterized in that, The high thermal conductivity material is diamond particles, graphene, carbon nanotubes, or metallic silver.