A plasma chamber quartz dome cleaning apparatus and plasma processing apparatus

Abstract

The utility model relates to the technical field of plasma source, more specifically, relate to a kind of plasma cavity quartz top cover cleaning device and plasma process equipment.The device at least includes radio frequency coil, faraday plate electrode and single-pole double-throw radio frequency switch:the radio frequency coil is used to receive radio frequency energy to excite plasma;Faraday plate electrode is set between the radio frequency coil and quartz top cover;Single-pole double-throw radio frequency switch has input, first output and second output, the input is connected to the faraday plate electrode, the first output is connected to the feed-in end of the radio frequency coil, and the second output is grounded.The utility model realizes the integration and automatic control of inductance coupling plasma process and capacitance coupling plasma cleaning function, achieves the effect that uniform and efficient removal quartz top cover attachment, significantly prolongs equipment maintenance cycle and improves product yield.

Description

Technical Field

[0001] This utility model relates to the field of plasma source technology, and more specifically, to a plasma cavity quartz top cover cleaning device and plasma process equipment. Background Technology

[0002] Plasma processing equipment is widely used in fields such as semiconductor manufacturing and material surface treatment. Among them, inductively coupled plasma sources have become one of the mainstream plasma generation methods due to their high efficiency, high plasma density, and low plasma bias voltage.

[0003] Planar helical inductors, as key components of inductively coupled plasma (ICP) sources, are widely used due to their advantages such as good process uniformity and high dissociation degree. In the process chamber of such planar ICP devices, a quartz top cover serves as electrical isolation and an observation window, located below the inductor coil. However, during processes such as etching and resist removal, reaction byproducts can deposit on the inner surface of the quartz top cover, forming a layer of deposits. If these deposits peel off and fall into the reaction chamber during the process, they can cause product defects and lead to product failure.

[0004] Currently, plasma-driven cleaning processes are commonly used to remove these deposits. However, planar spiral inductors suffer from uneven distribution, small area, and inconsistent voltage across different sections. Furthermore, the low ion energy of inductively coupled plasma results in insufficient and uneven bombardment of the quartz cap. Consequently, even with cleaning processes, deposits in certain areas of the quartz cap remain difficult to remove effectively, reducing product yield and significantly shortening equipment maintenance cycles due to frequent downtime for manual cleaning, thus increasing operating costs.

[0005] Therefore, a solution is needed that can efficiently and automatically clean deposits on quartz top covers and extend equipment maintenance cycles. Utility Model Content

[0006] The purpose of this invention is to provide a plasma cavity quartz top cover cleaning device and plasma process equipment, which solves the problems of process particulate matter contamination, short equipment maintenance cycle and reduced product yield caused by the difficulty in thoroughly and uniformly removing the deposits on the quartz top cover in traditional planar inductively coupled plasma equipment.

[0007] To achieve the above objectives, this utility model provides a plasma cavity quartz top cover cleaning device, which includes at least a radio frequency coil, a Faraday flat plate electrode, and a single-pole double-throw radio frequency switch:

[0008] The radio frequency coil is connected to the radio frequency system of the plasma process equipment and is used to receive radio frequency energy to excite the plasma.

[0009] The Faraday plate electrode is disposed between the radio frequency coil and the quartz top cover;

[0010] The single-pole double-throw radio frequency switch has an input terminal, a first output terminal, and a second output terminal. The input terminal is connected to the Faraday plate electrode, the first output terminal is connected to the feed terminal of the radio frequency coil, and the second output terminal is grounded.

[0011] The single-pole double-throw radio frequency switch is configured as follows:

[0012] In the first operating mode, the input terminal is switched to connect to the second output terminal, so that the Faraday plate electrode is grounded;

[0013] In the second operating mode, the input terminal is switched to connect to the first output terminal, and radio frequency energy is fed into the Faraday plate electrode.

[0014] In some embodiments, the plasma cavity quartz top cover cleaning device further includes a control system:

[0015] The control system is connected to the single-pole double-throw RF switch and is used to control the input terminal of the single-pole double-throw RF switch according to the process status, switching between the first output terminal and the second output terminal.

[0016] In some embodiments, the radio frequency coil is a planar spiral coil:

[0017] The planar spiral coil has a multi-turn spiral structure, and the multiple coils are connected in series or in parallel.

[0018] In some embodiments, the Faraday plate electrode is made of a circular metal sheet with a plurality of groove-shaped slits evenly distributed on its surface:

[0019] The groove-shaped slit is used to allow the radio frequency electric field to penetrate the Faraday plate electrode and excite a uniform plasma below the electrode.

[0020] In some embodiments, the groove-shaped gap is a rectangular groove, which is radially and uniformly distributed with respect to the center of the Faraday plate electrode.

[0021] In some embodiments, the number of rectangular slots is 8 to 72, the width is 1-20 mm, and the length is 30%-95% of the diameter of the Faraday plate electrode.

[0022] In some embodiments, the groove-shaped gap is a fan-shaped groove, which is circumferentially and uniformly distributed with the center of the Faraday plate electrode as the center.

[0023] In some embodiments, the number of sector slots is 4 to 36, and the radius of each sector slot is 30%-95% of the radius of the Faraday plate electrode.

[0024] In some embodiments, the single-pole double-throw radio frequency switch is a high-voltage relay, a reed relay, or a solid-state switch made of semiconductor devices.

[0025] In some embodiments, the RF coil has a feed-in terminal at its center, and the feed-in terminal is connected to an RF system;

[0026] The radio frequency system includes a radio frequency power supply and a matching unit connected in sequence:

[0027] The energy output from the RF power supply is impedance-adjusted by the matching circuit and then fed into the feed terminal.

[0028] In some embodiments, an RF vacuum capacitor is connected to the outermost end of the RF coil:

[0029] The other end of the radio frequency vacuum capacitor is grounded, forming a resonant circuit together with the radio frequency coil.

[0030] To achieve the above objectives, this utility model provides a plasma process equipment, comprising at least a process chamber, a quartz top cover, and the aforementioned plasma chamber quartz top cover cleaning device:

[0031] The quartz top cover is located at the top of the process chamber;

[0032] The plasma chamber quartz top cover cleaning device is installed above the quartz top cover and is used to clean the quartz top cover.

[0033] This utility model provides a plasma cavity quartz top cover cleaning device and plasma process equipment. By controlling the switching of radio frequency energy between the radio frequency coil and the Faraday plate electrode through a single-pole double-throw radio frequency switch, it realizes the integration and automatic control of inductively coupled plasma process and capacitively coupled plasma cleaning function, achieving the effect of uniformly and efficiently removing deposits on the quartz top cover, significantly extending the equipment maintenance cycle and improving product yield. Attached Figure Description

[0034] The above and other features, properties and advantages of this utility model will become more apparent from the following description taken in conjunction with the accompanying drawings and embodiments, in which the same reference numerals always denote the same features, wherein:

[0035] Figure 1a A schematic diagram of a typical planar inductively coupled plasma device is shown.

[0036] Figure 1bA schematic diagram of quartz deposit distribution in a typical planar inductively coupled plasma device is shown.

[0037] Figure 2 A schematic diagram of the structure of a plasma cavity quartz top cover cleaning device and a plasma process equipment according to an embodiment of the present invention is disclosed.

[0038] Figure 3 A schematic diagram of a Faraday plate electrode according to an embodiment of the present invention is shown;

[0039] Figure 4 A schematic diagram of a Faraday plate electrode according to another embodiment of the present invention is shown.

[0040] The meanings of the labels in the figures are as follows:

[0041] 11. RF power supply;

[0042] 12 matchers;

[0043] 13. Attachments;

[0044] 21 RF coils;

[0045] 22 Single-pole double-throw switch;

[0046] 23. Faraday plate electrode;

[0047] 231 rectangular groove;

[0048] 232 sector slots;

[0049] 233 RF connector;

[0050] 24 vacuum capacitors;

[0051] 30 process chambers;

[0052] 31 Quartz Top Cover;

[0053] 32 wafer stage;

[0054] 33 wafers. Detailed Implementation

[0055] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the utility model and are not intended to limit the utility model.

[0056] Figure 1a A schematic diagram of a typical planar inductively coupled plasma device is shown, such as... Figure 1aAs shown, in a conventional planar inductively coupled plasma device, a quartz top cover is located below a planar inductor coil. The planar inductor coil is connected to an RF power supply 11 via a matching device 12. Under the excitation of the RF power supply 11, an alternating magnetic field is generated, thereby exciting inductively coupled plasma in the process chamber.

[0057] Figure 1b shows a schematic diagram of the quartz deposit distribution in a typical planar inductively coupled plasma device, such as... Figure 1b As shown, after etching, adhesive removal and other processes, reaction byproducts are deposited on the inner surface of the quartz top cover, forming a layer of deposit 13. Even when conventional plasma cleaning processes are subsequently used, the cleaning effect is uneven and incomplete due to the uneven distribution of the planar inductor coils, the voltage differences in different areas of the coils, and the weak ion energy of the inductively coupled plasma. In some areas, the deposit 13 is difficult to remove effectively.

[0058] To address the aforementioned problems in the existing technology, this utility model provides a plasma cavity quartz top cover cleaning device and corresponding plasma process equipment. It achieves flexible switching between two operating modes by controlling the switching of radio frequency energy between the radio frequency coil and the Faraday plate electrode using a single-pole double-throw radio frequency switch.

[0059] Under normal process mode, the Faraday plate electrode is grounded to play a protective shielding role, effectively reducing the adhesion of deposits on the quartz top cover, thereby reducing particulate matter pollution during the process.

[0060] In the cleaning process mode, radio frequency energy is fed into the Faraday plate electrode to form a capacitively coupled plasma discharge. High-energy charged particles in the capacitively coupled plasma bombard the quartz top cover to achieve uniform and efficient removal of the deposits on the surface of the quartz top cover.

[0061] Figure 2 A schematic diagram of the structure of a plasma cavity quartz top cover cleaning device and a plasma process equipment according to an embodiment of the present invention is shown, as follows: Figure 2 As shown, the plasma cavity quartz top cover cleaning device proposed in this utility model includes at least an RF coil 21, a Faraday flat plate electrode 23, and a single-pole double-throw RF switch 22.

[0062] The radio frequency coil 21 is connected to the radio frequency system of the plasma process equipment and is used to receive radio frequency energy to excite the plasma.

[0063] The Faraday plate electrode 23 is disposed between the radio frequency coil 20 and the quartz top cover 31;

[0064] The single-pole double-throw radio frequency switch 22 has an input terminal, a first output terminal and a second output terminal. The input terminal is connected to the Faraday plate electrode 23, the first output terminal is connected to the feed terminal of the radio frequency coil 21, and the second output terminal is grounded.

[0065] The single-pole double-throw radio frequency switch 22 is configured as follows:

[0066] In the first working mode (i.e. normal process mode), the input terminal is switched to connect to the second output terminal, so that the Faraday plate electrode 23 is grounded, so as to shield the quartz top cover 31 in the normal process.

[0067] In the second working mode (i.e. cleaning process mode), the input terminal is switched to connect to the first output terminal, and radio frequency energy is fed into the Faraday plate electrode 23 to serve as the excitation electrode for capacitively coupled plasma in the cleaning process, generating high-energy particles to bombard the quartz top cover 31.

[0068] The plasma cavity quartz top cover cleaning device proposed in this utility model has a simple structure and compact size. By converting the function of the Faraday flat plate electrode 23, it realizes the protection of the quartz top cover 31 in normal process and the enhanced bombardment effect on the deposits in the cleaning process. It effectively solves the problem of particulate matter contamination and process failure caused by the difficulty in removing the deposits on the quartz top cover 31 in traditional planar inductively coupled plasma equipment in processes such as adhesive removal and etching. It greatly simplifies the process of cleaning the deposits on the quartz top cover 31 and significantly improves the overall maintenance cycle and operational reliability of the equipment.

[0069] To illustrate the technical solution of this utility model in more detail, the specific structure, materials and functional characteristics of each component of the plasma cavity quartz top cover cleaning device proposed in this utility model will be described one by one below.

[0070] In this embodiment, the radio frequency coil 21 is preferably a planar spiral coil, which can be adapted to the top space of the process chamber and is conducive to the uniform distribution of radio frequency energy within the chamber.

[0071] The planar spiral coil has a multi-turn spiral structure, and the multiple coils are connected in series or in parallel.

[0072] In practical applications, the structure of the RF coil 21 can be flexibly adjusted: it can adopt a multi-turn series spiral design, or other spiral structures such as multi-turn parallel connection according to energy requirements, to adapt to plasma process equipment of different specifications.

[0073] In terms of material selection, the RF coil 21 is made of a highly conductive metal, specifically copper, aluminum, iron, or other metal materials with a gold or silver conductive layer plated on the surface. The high conductivity minimizes energy loss during RF energy transmission, ensuring efficient energy transfer to the process chamber and guaranteeing plasma excitation effects.

[0074] In terms of specific connection method, the RF coil 21 has a feed-in end in the middle, which is directly connected to the RF system of the plasma process equipment.

[0075] The radio frequency system typically includes a radio frequency power supply 11 and a matching unit 12 connected in sequence. The energy output from the radio frequency power supply 11 is impedance-adjusted by the matching unit 12 before being fed into the feed terminal, thereby achieving impedance matching between the radio frequency power supply and the coil, significantly optimizing power transmission efficiency, and avoiding waste caused by energy reflection.

[0076] Furthermore, an RF vacuum capacitor 24 is connected to the outermost end of the RF coil 21. The other end of the RF vacuum capacitor 24 is grounded, forming a resonant circuit together with the RF coil 21 to improve the frequency characteristics and energy coupling efficiency of the system.

[0077] In this embodiment, the single-pole double-throw radio frequency switch 22 is the core component for realizing the switching of working modes. Its type can be flexibly selected. It can be implemented as a high-voltage relay, a reed relay or a solid-state switch made of semiconductor devices (such as PIN diodes), etc., to adapt to the radio frequency energy transmission and switching requirements in different scenarios.

[0078] To enable automated switching, the plasma cavity quartz top cover cleaning device in this embodiment is also equipped with a control system.

[0079] The control system is connected to both the plasma process equipment and the single-pole double-throw RF switch 22, and can automatically control the switching direction of the single-pole double-throw RF switch 22 according to the process status of the plasma process equipment.

[0080] Specifically, the control system controls the conduction path of the single-pole double-throw radio frequency switch 22 according to a preset program or external command:

[0081] When the equipment is in normal processes such as etching and resist removal, the control system will control the single-pole double-throw RF switch 22 to switch to the second output terminal, so that the Faraday plate electrode 23 is grounded and plays a shielding protection role.

[0082] When the equipment needs to enter the cleaning process to remove the deposits on the surface of the quartz top cover 31, the control system controls the single-pole double-throw radio frequency switch 22 to switch to the first output terminal, so that the Faraday plate electrode 23 is connected to the feed terminal of the radio frequency coil 21, thereby accessing radio frequency energy to excite capacitively coupled plasma and achieve efficient cleaning.

[0083] In this embodiment, the Faraday plate electrode 23 is located below the radio frequency coil 21 and above the quartz top cover 31, and is made of a thin metal plate made of a good conductive metal (such as copper, aluminum, etc.).

[0084] The Faraday plate electrode 23 is provided with an RF connection terminal for electrical connection with the single-pole double-throw RF switch 22.

[0085] Furthermore, the surface of the Faraday plate electrode 23 is provided with a number of uniformly distributed groove-shaped gaps. The groove-shaped gaps can be rectangular or fan-shaped to ensure that the radio frequency electric field can effectively penetrate the Faraday plate electrode 23 and excite uniformly distributed plasma below the electrode.

[0086] Figure 3 A schematic diagram of a Faraday plate electrode according to an embodiment of the present invention is shown, as follows: Figure 3 In the embodiment shown, the Faraday plate electrode 23 is a circular metal plate with a radio frequency connection terminal 233 at its center for establishing an electrical connection.

[0087] The slot-like gaps opened on the Faraday plate electrode 23 are rectangular slots 231. Multiple rectangular slots 231 are radially and evenly distributed on the entire electrode plate surface with the center of the Faraday plate electrode 23 (RF connection terminal 233) as the reference.

[0088] This radial, uniform layout ensures the symmetry and uniformity of the radio frequency electric field distribution below the electrodes, thereby guaranteeing that the capacitively coupled plasma excited in the cleaning process mode can uniformly and thoroughly bombard the entire quartz top cover 31.

[0089] The number of rectangular grooves 231 is preferably between 8 and 72, the width W is preferably 1-20 mm, the length l is preferably 30%-95% of the diameter of the Faraday plate electrode 23, and the included angle α between adjacent rectangular grooves is 22.5°.

[0090] By precisely controlling the size and arrangement of the rectangular slot 231, the coupling efficiency of radio frequency energy and plasma uniformity can be optimized while ensuring the strength of the electrode structure.

[0091] Figure 4 A schematic diagram of a Faraday plate electrode according to another embodiment of the present invention is shown, as follows: Figure 4 In the embodiment shown, the Faraday plate electrode 23 is also a circular metal plate with a radio frequency connection terminal 233 in the center, and the groove-shaped slot on the electrode plate is a fan-shaped slot 232.

[0092] The slot-shaped gaps on the Faraday plate electrode 23 are fan-shaped slots 232, and multiple fan-shaped slots 232 are evenly distributed circumferentially with the center of the Faraday plate electrode 23 (RF connection terminal 233) as the center.

[0093] The radius of each sector groove 232 is preferably 30%-95% of the radius of the Faraday plate electrode 23, and the number of them is preferably 4 to 36.

[0094] This slotted structure of the sector groove 232 not only maintains the uniformity of the radio frequency field but also further enhances the overall structural stability of the electrode, making it one of the important designs for achieving uniform capacitive plasma excitation.

[0095] In summary, both rectangular and sector-shaped slot designs are key means to achieve uniform and efficient capacitive plasma excitation by the Faraday plate electrode 23 in clean mode.

[0096] It is understood that the rectangular and fan-shaped slots described above are merely two exemplary embodiments of the slotted slits, and not limitations on the scope of protection of this utility model. In other embodiments of this utility model, the slotted slits may also adopt other shapes and arrangements, such as, but not limited to, polygonal or other irregularly shaped slots. Any technical solution that uses slotted slits to open on a Faraday plate electrode to enable the radio frequency electric field to effectively penetrate and excite uniform plasma falls within the scope of protection of this utility model.

[0097] The working principle and cleaning method of the plasma cavity quartz top cover cleaning device proposed in this utility model are introduced below.

[0098] The plasma cavity quartz top cover cleaning device proposed in this utility model achieves automatic switching between normal process mode and cleaning process mode through the switching of single-pole double-throw radio frequency switch 22. The specific working process is as follows:

[0099] When the plasma process equipment performs normal processes such as etching and resist removal, the control system sends a command to the single-pole double-throw RF switch 22 to switch the input terminal of the single-pole double-throw RF switch 22 to the second output terminal (ground terminal). At this time, the Faraday plate electrode 23 is grounded, which is equivalent to forming a shield above the quartz top cover 31.

[0100] In this state, radio frequency energy is transmitted to the process chamber only through radio frequency coil 21 to excite inductively coupled plasma;

[0101] Meanwhile, the grounded Faraday plate electrode 23 can effectively block the direct bombardment of charged particles in the plasma to the quartz top cover 31, thereby significantly reducing the deposition of reaction byproducts on the surface of the quartz top cover 31, reducing the risk of particulate matter pollution, and extending the service life of the quartz top cover 31.

[0102] In the cleaning process mode, the single-pole double-throw RF switch 22 connects the Faraday plate electrode 23 to the feed end of the RF coil 21, so that the Faraday plate electrode 23 acts as the upper electrode of the capacitor discharge. The capacitively coupled plasma formed at this time contains high-energy charged particles, which can quickly and uniformly remove the deposits on the surface of the quartz top cover 31.

[0103] When the device detects that there are deposits on the quartz top cover 31 and a cleaning procedure needs to be performed, the control system automatically controls the device to operate according to the following steps:

[0104] Step S1: Control the internal pressure of the process chamber within the range of 100 to 2000 mTorr to provide a suitable vacuum environment for plasma excitation;

[0105] Step S2: The control system switches the single-pole double-throw radio frequency switch 22 to the first output terminal, so that the Faraday plate electrode 23 is connected to the feed-in terminal of the radio frequency coil 21.

[0106] Step S3: Introduce a clean gas into the chamber, such as oxygen, argon, helium, nitrogen, or a mixture of the above gases. In this embodiment, oxygen is selected to ensure a highly efficient removal effect on organic matter deposits.

[0107] In step S4, 100W to 5000W of radio frequency energy is fed into the radio frequency coil 21 through the radio frequency system. Part of the radio frequency energy is used to excite plasma through the radio frequency coil 21, and the other part is transmitted to the Faraday plate electrode 23 through the single-pole double-throw radio frequency switch 22, so that the Faraday plate electrode 23 acts as the upper electrode of the capacitor discharge, forming capacitively coupled plasma. The high-energy charged particles in the capacitively coupled plasma are used to perform uniform and efficient bombardment cleaning on the quartz top cover 31.

[0108] In step S5, high-energy charged particles in the capacitively coupled plasma bombard the surface of the quartz top cover 31, thoroughly removing the deposited substances. After cleaning, the RF power supply 11 is turned off first, and then the control system controls the single-pole double-throw RF switch 22 to switch the input terminal back to the second output terminal, so that the Faraday plate electrode 23 is grounded again, and the equipment returns to the normal process standby state, preparing for the next normal process operation.

[0109] Based on the above-mentioned plasma cavity quartz top cover cleaning device, this utility model also proposes a plasma process equipment.

[0110] like Figure 2 As shown, the plasma process equipment provided by this utility model includes at least a process chamber 30, a quartz top cover 31, and a plasma chamber quartz top cover cleaning device.

[0111] The quartz top cover 31 is located at the top of the process chamber 30;

[0112] The plasma chamber quartz top cover cleaning device is installed above the quartz top cover 31 and is used to clean the surface deposits of the quartz top cover 31.

[0113] Furthermore, the plasma process equipment also includes the following components:

[0114] A plasma generator, located at the top of the process chamber 30, is used to generate plasma;

[0115] The wafer stage 32 is located at the lower part of the process chamber 30 and is used to support the wafer 33.

[0116] The plasma generator includes a quartz cylinder and a radio frequency coil 21.

[0117] The quartz tube is a hollow cylindrical structure used to provide space for plasma generation and confinement.

[0118] The radio frequency coil 21 is wound around the outside of the quartz tube and connected to the radio frequency power supply 11 through a matching device 12. It is used to generate an alternating magnetic field under the excitation of the radio frequency power supply 11, thereby stimulating an induced electric field inside the quartz tube, causing the introduced working gas to be ionized, and finally generating plasma that meets the process requirements.

[0119] In one specific embodiment, the quartz tube has a diameter of 400 mm, and the gas enters from the air inlet at the top of the quartz tube to ensure that the gas is evenly distributed inside the tube.

[0120] The RF power supply 11 uses a 13.56 MHz RF frequency and has a maximum power of 3000 W. By adjusting the output power of the RF power supply 11, the density of plasma in the cavity can be precisely controlled to adapt to the plasma intensity requirements of different processes.

[0121] The RF coil 21 has 3 turns, and the feed-in end of the RF coil 21 is connected to the first output end of the single-pole double-throw RF switch 22.

[0122] The single-pole double-throw RF switch 22 is implemented using a high-voltage relay, and its switching direction is precisely controlled by the control system to ensure stable switching between normal and cleaning processes.

[0123] The Faraday flat plate electrode 23 is made of a 2mm thick copper plate with 16 rectangular slots evenly distributed on the plate surface. The slots are rectangular slots with a length of 130mm and a width of 2mm. This slotting design ensures uniform penetration of radio frequency energy while maintaining the structural strength of the electrode.

[0124] The adjustable range of the RF vacuum capacitor 24 is 5-200pF. It works in conjunction with the RF coil 21 to form a resonant circuit, further optimizing the resonant characteristics of the system.

[0125] In actual operation, this plasma process equipment has the following advantages:

[0126] In normal process mode, the Faraday plate electrode 23 in the cleaning device plays a shielding role, effectively reducing the deposition on the quartz top cover 31.

[0127] When cleaning is required, there is no need to stop the machine and remove the quartz top cover 31. The control system can automatically start the cleaning process and quickly resume the process operation after cleaning is completed.

[0128] Compared with traditional equipment, this equipment can extend the maintenance cycle of the quartz top cover by more than double, while avoiding the risk of chamber contamination introduced by disassembly and cleaning, thereby significantly improving wafer process yield and overall equipment operating efficiency.

[0129] Compared with the prior art, the plasma cavity quartz top cover cleaning device and plasma process equipment provided by this utility model have the following beneficial effects:

[0130] 1) By switching the single-pole double-throw radio frequency switch, the integrated and automated control of inductively coupled plasma process and capacitive plasma cleaning is realized, which can more effectively and evenly remove the deposits on the surface of the quartz top cover, fundamentally solving the problems of uneven effect and serious residue of traditional cleaning methods.

[0131] 2) The Faraday electrode achieves an organic integration of the shielding and protection function of the quartz top cover during the process and the active bombardment function during the cleaning process. It eliminates the need for frequent disassembly of the quartz top cover, saving labor and downtime costs, and avoiding the risk of chamber contamination during disassembly. Ultimately, it significantly extends the equipment maintenance cycle and greatly improves the overall operating efficiency and wafer yield of the equipment.

[0132] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not specifically singular and may include plural forms. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of explicitly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0133] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more, unless otherwise expressly defined.

[0134] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0135] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "clockwise", "counterclockwise", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0136] The above embodiments are provided for those skilled in the art to implement or use the present invention. Those skilled in the art can make various modifications or changes to the above embodiments without departing from the inventive concept of the present invention. Therefore, the protection scope of the present invention is not limited to the above embodiments, but should be the maximum scope that conforms to the innovative features mentioned in the claims.

Claims

1. A plasma cavity quartz top cover cleaning device, characterized in that, It includes at least an RF coil, a Faraday plate electrode, and a single-pole double-throw RF switch: The radio frequency coil is connected to the radio frequency system of the plasma process equipment and is used to receive radio frequency energy to excite the plasma. The Faraday plate electrode is disposed between the radio frequency coil and the quartz top cover; The single-pole double-throw radio frequency switch has an input terminal, a first output terminal, and a second output terminal. The input terminal is connected to the Faraday plate electrode, the first output terminal is connected to the feed terminal of the radio frequency coil, and the second output terminal is grounded. The single-pole double-throw radio frequency switch is configured as follows: In the first operating mode, the input terminal is switched to connect to the second output terminal, so that the Faraday plate electrode is grounded; In the second operating mode, the input terminal is switched to connect to the first output terminal, and radio frequency energy is fed into the Faraday plate electrode.

2. The plasma cavity quartz top cover cleaning device according to claim 1, characterized in that, It also includes the control system: The control system is connected to the single-pole double-throw RF switch and is used to control the input terminal of the single-pole double-throw RF switch to switch between the first output terminal and the second output terminal according to the process status.

3. The plasma cavity quartz top cover cleaning device according to claim 1, characterized in that, The radio frequency coil is a planar spiral coil: The planar spiral coil has a multi-turn spiral structure, and the multiple coils are connected in series or in parallel.

4. The plasma cavity quartz top cover cleaning device according to claim 1, characterized in that, The Faraday plate electrode is made of a circular thin metal plate with multiple groove-shaped slots evenly distributed on its surface. The groove-shaped slit is used to allow the radio frequency electric field to penetrate the Faraday plate electrode and excite a uniform plasma below the electrode.

5. The plasma cavity quartz top cover cleaning device according to claim 4, characterized in that, The groove-shaped gap is a rectangular groove, and the rectangular grooves are evenly distributed radially with the center of the Faraday plate electrode as the reference.

6. The plasma cavity quartz top cover cleaning device according to claim 5, characterized in that, The number of rectangular grooves is 8 to 72, the width is 1-20 mm, and the length is 30%-95% of the diameter of the Faraday plate electrode.

7. The plasma cavity quartz top cover cleaning device according to claim 4, characterized in that, The groove-shaped gap is a fan-shaped groove, which is evenly distributed circumferentially with the center of the Faraday plate electrode as the center.

8. The plasma cavity quartz top cover cleaning device according to claim 7, characterized in that, The number of sector-shaped slots is 4 to 36, and the radius of each sector-shaped slot is 30%-95% of the radius of the Faraday plate electrode.

9. The plasma cavity quartz top cover cleaning device according to claim 1, characterized in that, The single-pole double-throw radio frequency switch is a high-voltage relay, a reed relay, or a solid-state switch made of semiconductor devices.

10. The plasma cavity quartz top cover cleaning device according to claim 1, characterized in that, The radio frequency coil has a feed-in end in the middle, and the feed-in end is connected to a radio frequency system; The radio frequency system includes a radio frequency power supply and a matching unit connected in sequence: The energy output from the RF power supply is impedance-adjusted by the matching circuit and then fed into the feed terminal.

11. The plasma cavity quartz top cover cleaning device according to claim 1, characterized in that, An RF vacuum capacitor is connected to the outermost end of the RF coil. The other end of the radio frequency vacuum capacitor is grounded, forming a resonant circuit together with the radio frequency coil.

12. A plasma processing apparatus, characterized in that, It includes at least a process chamber, a quartz top cover, and a plasma chamber quartz top cover cleaning device as described in any one of claims 1 to 11: The quartz top cover is located at the top of the process chamber; The plasma chamber quartz top cover cleaning device is installed above the quartz top cover and is used to clean the quartz top cover.

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