Wafer polishing supporting disc device

Abstract

This utility model provides a wafer polishing support chassis device, relating to the field of wafer processing technology. It includes a fixed chassis, a wafer carrier seat welded to the upper side of the fixed chassis, a limit buckle welded to the upper side of the wafer carrier seat, a wafer carrier disk disposed in the middle of the fixed chassis, a vacuum adsorption groove formed on the inner side of the wafer carrier disk, a vacuum pump tube disposed in the middle of the vacuum adsorption groove, and a wafer body disposed on the upper side of the wafer carrier disk. When used, this wafer polishing support chassis device utilizes the wafer carrier disk as the direct bearing interface for the wafer body. Its polytetrafluoroethylene (PTFE) body provides excellent corrosion resistance and low friction characteristics, effectively reducing the risk of surface damage during loading and unloading. Furthermore, the nano-ceramic coating covering the surface maintains geometric accuracy and surface smoothness even during long-term, high-frequency polishing operations, ensuring uniform stress on the wafer.

Description

Technical Field

[0001] This utility model relates to the field of wafer processing technology, and in particular to a support chassis device for wafer polishing. Background Technology

[0002] Wafers are the core substrate for manufacturing semiconductor chips. They are usually made of high-purity silicon and are in the form of a thin, circular wafer. Wafers need to be polished because scratches, impurities, and tiny bumps on the surface of the wafer after cutting can affect the precision of subsequent precision processes such as photolithography and etching, resulting in damage to chip performance. Polishing can make the wafer surface as smooth as nanometers, laying the foundation for the subsequent manufacturing of high-quality chips.

[0003] However, during wafer polishing, the wafer is prone to slight deformation due to heat, which affects the flatness of the polished surface and leads to local over- or under-polishing. At the same time, conventional polishing equipment uses rigid limits, which can easily cause stress damage to the sides of the wafer, affecting product quality. Furthermore, during the polishing process, the polishing head applies continuous pressure to the wafer surface. If the pressure distribution is uneven and the feedback is not timely, it can easily lead to stress concentration on the wafer surface, causing cracks or local collapse.

[0004] Therefore, we provide a support chassis device for wafer polishing to solve the above problems. Utility Model Content

[0005] To overcome the above deficiencies, this utility model provides a support chassis device for wafer polishing, which aims to solve the aforementioned problems.

[0006] To achieve the above objectives, this utility model is implemented through the following technical solution: it includes a fixed chassis, a wafer carrier base welded to the upper side of the fixed chassis, a limit buckle welded to the upper side of the wafer carrier base, a wafer carrier assembly disposed on the inner side of the fixed chassis, a wafer carrier disk disposed in the middle of the fixed chassis, a vacuum adsorption groove formed on the inner side of the wafer carrier disk, a vacuum pump tube disposed in the middle of the vacuum adsorption groove, and a wafer disposed on the upper side of the wafer carrier disk.

[0007] Preferably, the wafer carrier has a stepped structure, and a polishing slurry collection ring groove is welded to the outside of the wafer carrier, and a guide pipe is provided on the outside of the polishing slurry collection ring groove.

[0008] Preferably, the wafer carrier disk and the wafer body have the same diameter, and the wafer body and the wafer carrier disk form a limiting structure through a limiting buckle.

[0009] Preferably, the wafer carrier disk is made of polytetrafluoroethylene, and the surface of the wafer carrier disk is covered with a 0.5 mm thick nano-ceramic coating with a hardness of HV1200.

[0010] Preferably, a temperature compensation pad is bonded to the lower side of the wafer carrier disk, and the temperature compensation pad is made of nickel-titanium alloy.

[0011] Preferably, a shock-absorbing pad is bonded to the lower side of the temperature compensation pad. The shock-absorbing pad is made of silicone and is filled with vertical carbon fiber filaments.

[0012] Preferably, a stress-bearing cover plate is bonded to the lower side of the shock-absorbing rubber pad, and a pressure column is welded to the lower side of each stress-bearing cover plate. A pressure sensor is installed on the lower side of each pressure column, and a support base is welded to the lower side of each pressure sensor. A pressure sensor is installed on the lower side of the support base. The support base is welded to the inner wall of the fixed chassis, and the pressure columns are arranged in six groups at equal distances.

[0013] This invention provides a support chassis device for wafer polishing. Compared with the prior art, it has the following advantages:

[0014] 1. This wafer polishing support chassis device, when in use, uses the wafer support chassis as the direct support interface for the wafer. Its polytetrafluoroethylene body gives the structure excellent corrosion resistance and low friction characteristics, effectively reducing the risk of surface damage during loading and unloading. The nano-ceramic coating on the surface can maintain geometric accuracy and surface smoothness even in long-term high-frequency polishing operations, ensuring uniform stress on the wafer and avoiding thickness deviations caused by local collapse or deformation. Since wafer polishing generates high heat, the temperature compensation pad under the wafer support chassis will expand slightly due to thermal expansion characteristics, actively filling the interface gaps caused by thermal deformation, thereby maintaining a tight fit between the wafer and the wafer support chassis, effectively suppressing wafer warping or displacement caused by thermal stress, ensuring that the surface flatness is controlled within the nanometer precision range during the polishing process, and improving process repeatability and yield.

[0015] 2. This wafer polishing support chassis device, when in use, the shock-absorbing rubber pad under the temperature compensation pad can effectively absorb the high-frequency vibration generated during the polishing process, reducing the risk of wafer microcracks or surface scratches caused by mechanical impact. The vertically arranged carbon fiber bundles inside further improve the directional pressure resistance of the shock-absorbing rubber pad. When the force-bearing cover plate is subjected to pressure, the pressure is transmitted to the corresponding pressure sensor in real time through six sets of equidistant pressure columns, and then transmitted to the external computer through the pressure sensor, thereby monitoring the uniformity of pressure distribution during the wafer carrying process in real time. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the overall appearance structure of this utility model;

[0017] Figure 2This is a schematic diagram of the overall rear structure of this utility model;

[0018] Figure 3 This is a schematic diagram of the overall bottom view of the present invention;

[0019] Figure 4 This is a schematic diagram of the overall structure of the wafer carrier assembly of this utility model;

[0020] Figure 5 This is a schematic diagram of the disassembled structure of the wafer carrier component of this utility model;

[0021] Figure 6 This is a bottom view of the wafer carrier assembly of this utility model.

[0022] The following are the labeling elements in the diagram: 1. Fixed base; 2. Wafer carrier; 3. Limiting buckle; 4. Polishing slurry collection ring groove; 5. Guide tube; 6. Wafer carrier assembly; 601. Wafer carrier disk; 602. Vacuum adsorption groove; 603. Vacuum pump tube; 604. Wafer body; 605. Temperature compensation gasket; 606. Shock-absorbing rubber pad; 607. Force-bearing cover plate; 608. Pressure column; 609. Pressure sensor; 610. Support base; 611. Pressure sensor. Detailed Implementation

[0023] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0024] Please see Figure 1-6 This utility model provides a technical solution: a wafer polishing support chassis device, including a fixed chassis 1, a wafer carrier seat 2 welded to the upper side of the fixed chassis 1, a limit buckle 3 welded to the upper side of the wafer carrier seat 2, a wafer carrier assembly 6 disposed on the inner side of the fixed chassis 1, a wafer carrier disk 601 disposed in the middle of the fixed chassis 1, a vacuum adsorption groove 602 opened on the inner side of the wafer carrier disk 601, a vacuum pump tube 603 disposed in the middle of the vacuum adsorption groove 602, and a wafer body 604 disposed on the upper side of the wafer carrier disk 601.

[0025] The wafer carrier 2 has a stepped structure. A polishing slurry collection ring groove 4 is welded to the outside of the wafer carrier 2, and a guide pipe 5 is provided on the outside of the polishing slurry collection ring groove 4.

[0026] During use, as the polishing process of the wafer 604 is carried out, the polishing slurry will flow down the stepped surface of the wafer carrier 2, and after being collected in the polishing slurry collection ring groove 4, it will be discharged through the guide pipe 5. This can reduce the problem of liquid flowing out of the processing range and thus polluting the polishing equipment and the surrounding environment.

[0027] The wafer carrier disk 601 and the wafer body 604 have the same diameter, and the wafer body 604 and the wafer carrier disk 601 form a limiting structure through the limiting buckle 3.

[0028] When needed, the wafer 604 is placed on the wafer carrier 601 and radially positioned by the limiting buckle 3. In this way, during the polishing process, the wafer 604 can be stably fixed as a reference point by the limiting buckle 3. When the wafer 604 is subjected to pressure applied by the polishing head, it is finally forcibly limited.

[0029] The wafer carrier disk 601 is made of polytetrafluoroethylene and has a 0.5 mm thick nano-ceramic coating on its surface, with a hardness of HV1200.

[0030] When needed, the wafer carrier disk 601 serves as the direct carrier interface for the wafer body 604. Its polytetrafluoroethylene body endows the structure with excellent corrosion resistance and low friction characteristics, effectively reducing the risk of surface damage during loading and unloading. The nano-ceramic coating covering the surface can maintain geometric accuracy and surface smoothness even in long-term high-frequency polishing operations, ensuring uniform stress on the wafer and avoiding thickness deviations caused by local collapse or deformation.

[0031] A temperature compensation pad 605 is bonded to the lower side of the wafer carrier disk 601. The temperature compensation pad 605 is made of nickel-titanium alloy.

[0032] When needed, the high heat generated during wafer polishing causes the temperature compensation pad 605 under the wafer carrier 601 to expand slightly due to thermal expansion characteristics. This actively fills the interface gap caused by thermal deformation, thereby maintaining a tight fit between the wafer body 604 and the wafer carrier 601. This effectively suppresses wafer warping or displacement caused by thermal stress, ensuring that the surface flatness is controlled within the nanometer precision range during polishing, while improving process repeatability and yield.

[0033] A shock-absorbing pad 606 is bonded to the lower side of the temperature compensation pad 605. The shock-absorbing pad 606 is made of silicone and is filled with vertical carbon fiber filaments.

[0034] When needed, the damping pad 606 under the temperature compensation pad 605 can effectively absorb the high-frequency vibration generated during the polishing process, reducing the risk of wafer microcracks or surface scratches caused by mechanical impact. The vertically arranged carbon fiber bundles inside further enhance the directional compressive strength of the damping pad 606.

[0035] A stress-bearing cover plate 607 is bonded to the lower side of the shock-absorbing rubber pad 606. A pressure column 608 is welded to the lower side of each stress-bearing cover plate 607. A pressure sensor 609 is installed on the lower side of each pressure column 608. A support base 610 is welded to the lower side of the pressure sensor 609. A pressure sensor 611 is installed on the lower side of the support base 610. The support base 610 is welded to the inner wall of the fixed chassis 1. The pressure columns 608 are arranged in six groups at equal intervals.

[0036] When needed, the pressure plate 607 is subjected to pressure, and the pressure is transmitted in real time to the corresponding pressure sensor 609 through six sets of equidistant pressure columns 608. The pressure is then transmitted to the external computer through the pressure sensor 611, thereby monitoring the uniformity of pressure distribution during the wafer bearing process in real time.

[0037] Working principle: When needed, the fixed base 1 is fixed in the required position, and then the wafer 604 is placed on the wafer carrier 601. The position is calibrated and limited by the limiting buckle 3 on the outside of the wafer carrier 2. Then, the vacuum pump body performs a vacuum operation on the vacuum adsorption groove 602 through the vacuum pump tube 603, so that a negative pressure adsorption is formed between the back of the wafer 604 and the vacuum adsorption groove 602, and the wafer 604 is firmly adsorbed on the surface of the wafer carrier 601.

[0038] After being fixed in place, as the polishing equipment grinds the upper surface of the wafer 604, the downward pressure generated by the grinding is transmitted in real time through the force-bearing cover plate 607 to the pressure sensor 609 under the pressure column 608. The grinding pressure is then monitored in real time by the pressure sensor 611 under the support base 610, reducing the phenomenon of excessive polishing pressure at a certain position during the grinding process, which could lead to over-grinding. During the polishing process, the sprayed polishing liquid flows into the polishing liquid collection ring groove 4 and is then discharged through the guide pipe 5. As polishing progresses, heat is transferred to the temperature compensation pad 605, which expands slightly to actively fill the interface gap caused by thermal deformation, thereby maintaining a tight fit between the wafer 604 and the wafer carrier 601. Finally, the vibration generated is damped by the shock-absorbing rubber pad 606. This completes the use of a carrier base device for wafer polishing.

[0039] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A wafer polishing support chassis device, comprising a fixed chassis (1), characterized in that: A wafer carrier (2) is welded to the upper side of the fixed chassis (1), and a limit buckle (3) is welded to the upper side of the wafer carrier (2). A wafer carrier assembly (6) is provided on the inner side of the fixed chassis (1). A wafer carrier disk (601) is provided in the middle of the fixed chassis (1). A vacuum adsorption groove (602) is provided on the inner side of the wafer carrier disk (601). A vacuum pump tube (603) is provided in the middle of the vacuum adsorption groove (602). A wafer body (604) is provided on the upper side of the wafer carrier disk (601).

2. The wafer polishing support chassis device according to claim 1, characterized in that, The wafer carrier (2) has a stepped structure. A polishing liquid collection ring groove (4) is welded to the outside of the wafer carrier (2). A guide pipe (5) is provided on the outside of the polishing liquid collection ring groove (4).

3. The wafer polishing support chassis device according to claim 1, characterized in that, The wafer carrier disk (601) and the wafer body (604) have the same diameter, and the wafer body (604) and the wafer carrier disk (601) form a limiting structure through the limiting buckle (3).

4. The wafer polishing support chassis device according to claim 1, characterized in that, The wafer carrier disk (601) is made of polytetrafluoroethylene, and the surface of the wafer carrier disk (601) is covered with a 0.5 mm thick nano-ceramic coating with a hardness of HV1200.

5. The wafer polishing support chassis device according to claim 1, characterized in that, A temperature compensation pad (605) is bonded to the lower side of the wafer carrier disk (601), and the temperature compensation pad (605) is made of nickel-titanium alloy.

6. The wafer polishing support chassis device according to claim 5, characterized in that, The temperature compensation pad (605) is bonded to a shock-absorbing pad (606) on its lower side. The shock-absorbing pad (606) is made of silicone and is filled with vertical carbon fiber filaments.

7. The wafer polishing support chassis device according to claim 6, characterized in that, The shock-absorbing pad (606) is bonded to a force-bearing cover plate (607) on its lower side. Each force-bearing cover plate (607) has a pressure column (608) welded to its lower side. Each pressure column (608) has a pressure sensor (609) installed on its lower side. Each pressure sensor (609) has a support base (610) welded to its lower side. Each support base (610) has a pressure sensor (611) installed on its lower side. The support base (610) is welded to the inner wall of the fixed chassis (1). The pressure columns (608) are arranged in six groups at equal intervals.

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