A PVD process apparatus

Abstract

This application provides a PVD process equipment, relating to the field of photovoltaic technology. It includes a process chamber containing multiple, stacked, and spaced sub-cavities. Each sub-cavity is connected to a corresponding return system for conveying a carrier plate within the sub-cavity. Silicon wafers are mounted on the carrier plates. Each sub-cavity also has a cathode system. As the carrier plate passes through the sub-cavity, the cathode system sputters a target material toward the silicon wafer on the carrier plate to form a predetermined film layer on the silicon wafer. By configuring the process chamber as multiple stacked sub-cavities, adjacent sub-cavities are not interconnected and are separated by partition walls, ensuring that the process processes within each sub-cavity do not interfere with each other. The carrier plates, which are mounted on the carrier plates, can enter and exit the sub-cavities via the return system, allowing the cathode systems within the sub-cavities to sputter targets toward the silicon wafers, forming the predetermined film layer. Without changing the equipment's footprint, by utilizing the upper space, multiple sub-cavities can operate simultaneously, thereby increasing production capacity.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, specifically to a PVD process equipment. Background Technology

[0002] Currently, heterojunction solar cells in the photovoltaic industry primarily utilize PVD (Polymerization and Deposition) equipment to fabricate TCO (Total Organic Carbon) films. PVD equipment is a vacuum chamber system that uses magnetron sputtering to generate the TCO film. Commonly used PVD equipment in the photovoltaic industry features a horizontal design, meaning the carrier substrate is transported horizontally within the chamber. The accompanying carrier return device is located at the bottom of the equipment to save space. Existing PVD equipment is interconnected with upstream and downstream automated systems, enabling the cyclical movement of the carrier substrate into and out of the chamber, ensuring continuous production.

[0003] PVD process equipment needs to maintain a high vacuum state during operation, consisting of an atmospheric to vacuum transition chamber and a vacuum process operating chamber. Due to the need to maintain the vacuum state and ensure continuous production cycle, PVD process equipment currently adopts a linear design, so the main body of the equipment is generally long. In addition, with its power and electrical cabinet and other auxiliary equipment, the overall footprint of the equipment is relatively large.

[0004] For a single unit, its production capacity is limited. If you want to increase the production capacity, you generally need to enlarge and lengthen the cavity design, which will also increase the space it occupies. However, the effect of increasing the production capacity is not enough to multiply it. Utility Model Content

[0005] The purpose of this application is to provide a PVD process equipment that can effectively increase production capacity without increasing the floor space.

[0006] In one aspect of this application, a PVD process apparatus is provided, including a process cavity, in which multiple layers of sub-cavities are formed stacked and spaced apart. Each of the multiple sub-cavities is connected to a corresponding return system for conveying a carrier plate within the sub-cavities, wherein the carrier plate is used to mount silicon wafers.

[0007] Each of the sub-cavities is also provided with a cathode system. When the carrier plate passes through the sub-cavity, the cathode system sputters the target material of the cathode system toward the silicon wafer on the carrier plate to form a predetermined film layer on the silicon wafer.

[0008] Optionally, the sub-cavity has an inlet and an outlet, and the corresponding return system is connected to the inlet and the outlet respectively, so as to allow the carrier plate to circulate in and out of the sub-cavity through the inlet and the outlet.

[0009] Optionally, the cathode system is located within the sub-cavity and perpendicular to the direction of movement of the carrier plate, and the cathode system forms a clearance zone for the carrier plate to pass through.

[0010] Optionally, there are multiple cathode systems, which are spaced apart within the sub-cavities.

[0011] Optionally, the cathode system includes a cathode component and a target material disposed on the cathode component, wherein the cathode component is slidably connected to the sub-cavity.

[0012] Optionally, it also includes a carrier trolley, the height of which is adjustable for docking with the cathode components in different sub-cavities. The carrier trolley and the sub-cavities are respectively provided with mutually cooperating slide rails so that the corresponding cathode components can slide out through the slide rails.

[0013] Optionally, the cathode component is provided with a handle facing the outside of the sub-cavity to facilitate pulling out the cathode component.

[0014] Optionally, the process cavity is further provided with support legs, the height of which is between 780mm and 920mm.

[0015] Optionally, the multi-layer sub-cavities include an upper sub-cavity and a lower sub-cavity, wherein the upper sub-cavity is connected to the upper backhaul system and the lower sub-cavity is connected to the lower backhaul system.

[0016] Optionally, the upper transmission system is mounted above the upper sub-cavity via an upper support frame, and the lower transmission system is mounted on the ground.

[0017] The PVD process equipment provided in this application utilizes the space above the equipment to arrange multiple sub-cavities, realizing a multi-layer process operation channel. The process cavity is set up as multiple stacked sub-cavities, with adjacent sub-cavities not communicating with each other, separated by partition walls, so that the process processes in each sub-cavity do not interfere with each other. A silicon wafer is placed on a carrier plate, which can enter and exit the sub-cavities through a return system, so that the cathode system in the sub-cavity faces the sputtering target on the silicon wafer to form a preset film layer on the silicon wafer. The return system and cathode system in each sub-cavity are set one-to-one in their respective sub-cavities to complete the sputtering process in each sub-cavity. Without changing the equipment's footprint, by utilizing the upper space, multiple sub-cavities can work simultaneously, thereby increasing production capacity. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is one of the schematic diagrams of the PVD process equipment provided in this embodiment;

[0020] Figure 2 This is the second schematic diagram of the PVD process equipment provided in this embodiment;

[0021] Figure 3 This is the third schematic diagram of the PVD process equipment provided in this embodiment;

[0022] Figure 4 This is the fourth schematic diagram of the PVD process equipment provided in this embodiment.

[0023] Icons: 1-Feet; 2-Lower sub-cavity; 3-Upper sub-cavity; 4-Inlet; 5-Lower return system; 6-Upper return system; 7-Support frame; 8-Target installation position; 9-Cathode system; 10-Lower cathode; 11-Upper cathode; 12-Slide rail; 13-Carrying trolley. Detailed Implementation

[0024] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings.

[0025] In the description of this application, it should be noted that the terms "inner" and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product is in use. They are used only for the convenience of describing this application and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0026] It should also be noted that, unless otherwise explicitly specified and limited, the terms "setup" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0027] Currently, PVD process equipment in the photovoltaic industry all adopt a single-layer design, i.e., single-channel process operation. The process chamber has two types of cathodes, upper and lower. The carrier plate is conveyed from the middle; the upper cathode forms the front TCO film, and the lower cathode forms the back TCO film. The carrier plate carries the coated silicon wafers out of the vacuum chamber and is conveyed downstream. The carrier plate is continuously conveyed in a single line within the chamber. The PVD process equipment has a base support around the chamber, and the space at the bottom of the chamber is used to house the carrier plate return conveyor line. This sequentially allows the carrier plate to carry silicon wafers into the chamber for coating. After the silicon wafers are conveyed downstream, the empty carrier plate can be returned to the loading area to carry silicon wafers again, achieving carrier plate recycling. During PVD process equipment maintenance, the top chamber cover is opened by flipping it open to clean the internal components and replace parts. Cathode target maintenance involves lifting the entire device out using a crane, allowing for target and baffle replacement from outside the equipment.

[0028] Currently, the overall height of the single-layer transfer chamber in PVD process equipment is 2m to 3m, which occupies a large area. However, the upper space of the equipment is very large, and it is only occupied by the chamber top cover during chamber maintenance. Therefore, the upper space of the equipment is not fully utilized.

[0029] Based on this, the embodiments of this application provide a PVD process equipment. By designing the overall layout of the PVD process equipment, the upper space area is utilized to increase the production capacity of the production line within the original area.

[0030] Specifically, this application provides a PVD process equipment (hereinafter referred to as the equipment), please refer to... Figure 1 As shown, it includes: a process cavity, in which multiple layers of sub-cavities are formed stacked and spaced apart, and each of the multiple sub-cavities is connected to a corresponding return system for transferring a carrier plate in the sub-cavity, and the carrier plate is used to place silicon wafers.

[0031] Each sub-cavity is also provided with a cathode system 9. When the carrier plate passes through the sub-cavity, the cathode system 9 sputters the target material of the cathode system 9 toward the silicon wafer on the carrier plate to form a preset film layer on the silicon wafer.

[0032] This equipment has a process chamber, which is a vacuum chamber, for use in sputtering processes. For example, the process chamber in this application is rectangular; each of the four corners of the rectangular process chamber is provided with a support leg 1, the height of which is between 780mm and 920mm, to allow sufficient space below the process chamber for equipment maintenance and installation of the return transmission system 5.

[0033] The process chamber forms multiple sub-cavities, which are stacked and separated by partition walls to ensure that the process processes within adjacent sub-cavities do not interfere with each other. Each sub-cavity is connected to a return system, which includes a return channel on which a carrier plate is located. The return system drives the carrier plate to circulate in and out of the sub-cavities, and silicon wafers are placed on the carrier plate.

[0034] The sub-cavity also corresponds one-to-one with the cathode system 9. The cathode system 9 is used to sputter the target material toward the silicon wafer on the carrier plate when the carrier plate passes through the sub-cavity, so that a preset film layer can be formed on the silicon wafer, completing the sputtering of the silicon wafer. After the sputtered silicon wafer passes through the carrier plate from the sub-cavity, the silicon wafer with the preset film layer is unloaded, and another silicon wafer to be sputtered is placed on the empty carrier plate. The carrier plate carrying the silicon wafer to be sputtered is recycled back into the sub-cavity through the return system, and the sputtering is completed according to the above process. This process is repeated to complete the sputtering of a batch of silicon wafers.

[0035] like Figure 2 As shown, taking a two-layer sub-cavity as an example, the process cavity is set as a symmetrical upper sub-cavity 3 and lower sub-cavity 2. The upper sub-cavity 3 is connected to the upper return system 6, and the lower sub-cavity 2 is connected to the lower return system 5. The two opposite sides of the sub-cavity are its inlet 4 and outlet, respectively. The corresponding return systems are connected to the inlet 4 and outlet, respectively, so as to allow the carrier plate to circulate in and out of the sub-cavity through the inlet 4 and outlet.

[0036] The return channel of the return system passes through the sub-cavity via inlet 4 and outlet 4, thus driving the carrier plate to circulate in and out of the sub-cavity. After the carrier plate enters the upper sub-cavity 3, it is then transported to the inlet 4 of the upper sub-cavity 3 via the upper return system 6 to achieve circulation; after the carrier plate enters the lower sub-cavity 2, it is transported to the inlet 4 of the lower sub-cavity 2 via the lower return system 5 to achieve circulation.

[0037] In addition, please refer to Figure 3 As shown, the upper transmission system 6 is mounted above the upper sub-cavity 3 via the upper support frame 7, and the lower transmission system 5 is mounted on the ground.

[0038] Since the upper return transmission system 6 is located above the upper sub-cavity 3, it can be fixed above the upper sub-cavity 3 by the support frame 7; while the lower return transmission system 5 can be directly fixed to the ground.

[0039] Therefore, the PVD process equipment provided in this application embodiment utilizes the space above the equipment to arrange multiple sub-cavities, realizing a multi-layer process operation channel. The process cavity is set as a multi-layer stacked sub-cavity, with adjacent sub-cavities not communicating with each other, separated by partition walls, so that the process processes in each sub-cavity do not interfere with each other. A silicon wafer is set on the carrier plate, which can enter and exit the sub-cavity through the return system, so that the cathode system 9 in the sub-cavity faces the silicon wafer sputtering target, forming a preset film layer on the silicon wafer. The return system and cathode system 9 in each sub-cavity are set one-to-one in their respective sub-cavities to complete the sputtering process in each sub-cavity. Without changing the equipment's footprint, by utilizing the upper space, multiple sub-cavities can work synchronously, thereby increasing production capacity.

[0040] Furthermore, the cathode system 9 is located within the sub-cavity and perpendicular to the direction of movement of the carrier plate, and the cathode system 9 has a clearance area for the carrier plate to pass through.

[0041] The carrier plate moves from inlet 4 to outlet within the sub-cavity via a return system, while the cathode system 9 is located on the side of the sub-cavity, corresponding to the target mounting position 8. There are multiple cathode systems 9, spaced apart within the sub-cavity. As the carrier plate moves, it passes through multiple cathode systems 9 in sequence, and these systems sputter the target towards different positions on the silicon wafer on the carrier plate. Thus, when the carrier plate carrying the silicon wafer exits the sub-cavity, a pre-set film layer will be attached to the silicon wafer.

[0042] In order to allow the carrier plate to pass through the cathode system 9 without interference, a clearance area is also formed in the cathode system 9 for the carrier plate to pass through. For example, it can be a groove on the cathode system 9 that allows the carrier plate to pass through, or it can be a gap between the cathode system 9 and the partition wall (adjacent sub-cavities are isolated by the partition wall).

[0043] The cathode system 9 is housed entirely inside the sub-cavity, while its control module is located outside the sub-cavity. The control module is connected to the cathode system 9 for controlling the cathode system 9, such as sputtering time and frequency.

[0044] The cathode system 9 includes a cathode component and a target material disposed on the cathode component, and the cathode component is slidably connected to the sub-cavity.

[0045] The cathode component is arranged along a direction parallel to the entrance 4 of the sub-cavity. For example, each of the two sub-cavities has one cathode component. Figure 4 As shown, the upper cathode 11 and the lower cathode 10 are respectively, and the upper cathode 11 and the lower cathode 10 are slidably connected to the sub-cavity through the supporting trolley 13.

[0046] Specifically, the height of the carrier trolley 13 is adjustable to dock cathode components in different sub-cavities. The carrier trolley 13 and the sub-cavities are respectively provided with mutually cooperating slide rails 12 so that the corresponding cathode components can slide out through the slide rails 12.

[0047] This application provides an example of maintenance using a side-pull-out target material for repairing and replacing the cathode component and target. A support trolley 13 supports the cathode component, and its feet are height-adjustable. A slide rail 12 is provided on the support trolley 13, and the partition wall of the sub-cavity is also equipped with a slide rail 12, allowing the cathode component to slide out of the sub-cavity along the slide rail 12. During use, when maintaining the lower sub-cavity 2, the support trolley 13 is adjusted so that its slide rail 12 is at the same height as the lower cathode 10, allowing the lower cathode 10 to be pulled directly out of the lower sub-cavity 2 along the slide rail 12. When maintaining the upper sub-cavity 3, the height of the support trolley 13 is adjusted so that its slide rail 12 is at the same height as the upper cathode 11, allowing the upper cathode 11 to be pulled directly out of the upper sub-cavity 3 along the slide rail 12. During normal operation of the equipment, the support trolley 13 can be placed in a designated area for standby.

[0048] In order to facilitate the pulling of the cathode component out of the sub-cavity, a handle is provided on the outside of the cathode component facing the sub-cavity. The cathode component can be pulled out by the handle and slid out along the slide rail 12.

[0049] In summary, the PVD process equipment of this application adopts a double-layered sub-cavity structure, allowing the equipment to operate simultaneously in both layers without affecting each other. This provides greater flexibility in production operations; even if the upper (lower) sub-cavity is shut down for maintenance, the lower (upper) sub-cavity can continue operating. The double-layered sub-cavity design allows for a significant increase in output without disproportionately increasing the equipment's footprint. The double-layered sub-cavity can be configured with the upper and lower sub-cavities 2 within a single metal frame, with a partition wall in between. Alternatively, a mirrored design of the two sub-cavities can be used, allowing them to remain independent, with only a spatial arrangement of one above the other, ensuring the processes within each sub-cavity do not interfere with each other. The PVD process equipment's return system in this design can be configured with the lower return system 5 returning from the bottom of the equipment and the upper return system 6 returning from the top. Alternatively, both return systems can operate simultaneously, without separation, and their positions can be arbitrarily chosen.

[0050] The cathode system 9 can be pulled out from the side of the sub-cavity in a drawer-like manner, and is paired with a support carriage 13. Both the sub-cavity and the support carriage 13 have slide rails 12 that allow the cathode components to move for maintenance. This drawer-like maintenance method can be implemented in every sub-cavity of the PVD process equipment. However, in non-process chambers, it can also be designed with a side-opening door, which will not be elaborated here.

[0051] The above description is merely an embodiment of this application and is not intended to limit the scope of protection of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A PVD process equipment, characterized in that, include: A process cavity, wherein multiple layers of sub-cavities are formed within the process cavity and spaced apart. Each of the multiple sub-cavities is connected to a corresponding return system for conveying a carrier plate within the sub-cavity. The carrier plate is used to mount silicon wafers. Each of the sub-cavities is also provided with a cathode system. When the carrier plate passes through the sub-cavity, the cathode system sputters the target material of the cathode system toward the silicon wafer on the carrier plate to form a predetermined film layer on the silicon wafer.

2. The PVD process equipment according to claim 1, characterized in that, The sub-cavity has an inlet and an outlet, and the corresponding return system is connected to the inlet and the outlet respectively, so as to allow the carrier plate to circulate in and out of the sub-cavity through the inlet and the outlet.

3. The PVD process equipment according to claim 1, characterized in that, The cathode system is located within the sub-cavity and perpendicular to the direction of movement of the carrier plate, and the cathode system forms a clearance zone for the carrier plate to pass through.

4. The PVD process equipment according to claim 1, characterized in that, There are multiple cathode systems, which are spaced apart within the sub-cavities.

5. The PVD process equipment according to claim 1, characterized in that, The cathode system includes a cathode component and a target material disposed on the cathode component, and the cathode component is slidably connected to the sub-cavity.

6. The PVD process equipment according to claim 5, characterized in that, It also includes a carrier trolley, the height of which is adjustable for docking with the cathode components in different sub-cavities. The carrier trolley and the sub-cavities are respectively provided with mutually cooperating slide rails so that the corresponding cathode components can slide out through the slide rails.

7. The PVD process equipment according to claim 6, characterized in that, The cathode component is provided with a handle facing the outside of the sub-cavity to facilitate pulling out the cathode component.

8. The PVD process equipment according to claim 1, characterized in that, The process chamber is also equipped with support legs, the height of which is between 780mm and 920mm.

9. The PVD process equipment according to any one of claims 1 to 8, characterized in that, The multi-layer sub-cavities include an upper sub-cavity and a lower sub-cavity. The upper sub-cavity is connected to the upper return transmission system, and the lower sub-cavity is connected to the lower return transmission system.

10. The PVD process equipment according to claim 9, characterized in that, The upper transmission system is mounted above the upper sub-cavity via an upper support frame, while the lower transmission system is mounted on the ground.

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