Diamond deposition apparatus

Abstract

The utility model discloses a diamond deposition equipment, including vacuum cavity subassembly, with the closed cavity, is equipped with spray subassembly, heating assembly and substrate stage in turn along vertical direction in the closed cavity, lift subassembly, including lift machine, lifting rod and lift support unit, and the top of lifting rod is connected with substrate stage through the through -hole, and the bottom of lifting rod is connected lift machine, gas path subassembly, and the output is linked together with spray subassembly, spray subassembly sets up in the top of closed cavity, heating assembly is located below spray subassembly, substrate stage is located below heating assembly, water path subassembly is used to send circulating cooling water to vacuum cavity subassembly and substrate stage, vacuum system, and the input is linked together with closed cavity. The utility model discloses a diamond deposition equipment, has improved the reaction gas evenness of substrate stage top, and the spacing between substrate stage and heating assembly can be flexibly adjusted, thereby improved the uniformity of the diamond plating layer of synthesis, and can adapt to a variety of deposition process scene.

Description

Technical Field

[0001] This utility model relates to the field of industrial equipment, and in particular to a diamond deposition equipment. Background Technology

[0002] In the field of diamond coating deposition technology, hot-wire chemical vapor deposition (HFCVD) equipment is widely used in the preparation of diamond coatings due to its advantages such as controllable cost and stable process. Inside a vacuum reaction chamber, a hot filament (usually a high-temperature resistant metal wire such as tantalum or tungsten) is heated to over 2000°C, causing the introduced hydrocarbon gas (such as methane) to undergo a thermal decomposition reaction with hydrogen, generating carbon-containing active particles. These active particles are then deposited on the substrate surface to form a diamond film.

[0003] However, traditional HFCVD equipment has significant shortcomings: On the one hand, the reactant gases enter the reaction chamber in a disordered and dispersed manner, making it difficult to form a uniform and controllable airflow distribution in the hot filament thermal excitation area. Some gases flow to the substrate or are discharged before fully contacting the hot filament for decomposition, resulting in waste of raw materials. Furthermore, the uneven concentration of active particles leads to differences in the thickness and purity of the diamond film deposited on the substrate surface, affecting the coating quality. On the other hand, the relative positions of the hot filament and the substrate stage are fixed. When adjusting the deposition process parameters, it is impossible to flexibly adjust their relative positions to adapt to the changes, limiting the flexibility and applicability of the process. Uneven temperature gradients and airflow distribution issues can also lead to inconsistent coating thickness and poor uniformity on the substrate stage surface, affecting the stability of diamond quality.

[0004] Therefore, there is an urgent need to develop a new diamond deposition device to solve the above problems. Utility Model Content

[0005] In view of this, the present invention provides a diamond deposition apparatus to solve the problem of poor uniformity of diamond film coating when synthesizing diamond films using existing HPCVD equipment.

[0006] To achieve one, some, or all of the above objectives, or other objectives, this utility model provides a diamond deposition apparatus, comprising: A vacuum chamber assembly has a closed cavity, in which a spray assembly, a heating assembly, and a substrate stage are arranged sequentially along the vertical direction; the bottom of the vacuum chamber assembly is provided with a cavity bottom plate, and a through hole is formed on the cavity bottom plate; The lifting assembly includes a lifting mechanism, a lifting rod, and a lifting support unit sleeved on the outside of the lifting rod. The top end of the lifting rod is connected to the substrate stage through the through hole, and the bottom end of the lifting rod is connected to the lifting mechanism. The lifting mechanism drives the lifting rod to move the substrate stage in the vertical direction, thereby adjusting the distance between the substrate stage and the heating assembly. The gas path assembly has an output end connected to the spray assembly and is used to deliver the reaction gas into the closed cavity. The spray assembly is located at the top of the enclosed cavity and is used to introduce and diffuse the reactive gas; The heating component is located below the spraying component and is used to thermally excite the reaction gas; The substrate stage is located below the heating assembly and is used to support the workpiece to be deposited; A water circuit assembly is used to supply circulating cooling water to the vacuum chamber assembly and the substrate stage; The vacuum system has its input end connected to the enclosed cavity.

[0007] Furthermore, the spray assembly includes a spray plate and an air inlet. The spray plate has a gas buffer chamber inside and several through spray holes at the bottom. The air inlet is located at the center of the side of the spray plate away from the heating assembly and connects the output end of the gas path assembly with the gas buffer chamber.

[0008] Furthermore, the spray assembly also includes a baffle plate disposed within the gas buffer chamber. The baffle plate is arranged parallel to the spray plate, and the area of ​​the baffle plate is smaller than the area of ​​the spray plate.

[0009] Furthermore, the heating assembly includes a heating wire and a heating wire support arranged opposite to each other. The heating wire support is vertically installed on the cavity bottom plate and distributed on both sides of the substrate stage. The two ends of the heating wire are respectively fixed on the heating wire support arranged opposite to each other. The heating wire is located above the substrate stage and maintains a preset distance from the substrate stage.

[0010] Furthermore, the width of the spray plate is less than or equal to the length of the heating wire.

[0011] Furthermore, the lifting support unit is sleeved on the outside of the lifting rod. The lifting support unit includes an upper insulating part and a lower insulating part. The upper insulating part is sandwiched between the upper end of the lifting support unit and the bottom plate of the cavity, and the lower insulating part is sandwiched between the lower end of the lifting support unit and the elevator.

[0012] Furthermore, the upper insulating part includes an annular insulating plate, a bottom sealing plate, and insulating fasteners. The annular insulating plate is disposed on the lower surface of the cavity bottom plate, the bottom sealing plate is fitted to the lower surface of the annular insulating plate, and the upper end face of the lifting support unit is fitted to the lower surface of the bottom sealing plate. The insulating fasteners pass through the upper end face of the lifting support unit, the bottom sealing plate, and the annular insulating plate, and are then locked and fixed to the cavity bottom plate.

[0013] Furthermore, the lower insulating part includes a lifting plate insulating component and an insulating fastener. The lifting plate insulating component is sandwiched between the bottom end face of the lifting support unit and the lifting machine. After the insulating fastener passes through the upper end face of the lifting machine and the lifting plate insulating component, it is locked and fixed to the bottom end face of the lifting support unit.

[0014] Furthermore, the insulating fastener includes a screw and a screw insulating sleeve, the screw insulating sleeve being fitted over the outside of the screw.

[0015] Furthermore, the water circuit assembly includes a first pipe and a second pipe; the first pipe is connected to the cavity interlayer of the vacuum cavity assembly for regulating the cavity temperature; the second pipe is connected to the cooling channel inside the substrate stage for regulating the temperature of the workpiece to be deposited.

[0016] Implementing the embodiments of this utility model will have the following beneficial effects: The diamond deposition equipment of this invention vertically arranges a spray assembly, a heating assembly, and a substrate stage within a closed cavity. This allows the reactive gas to diffuse evenly through the spray assembly and then directly enter the thermal excitation area of ​​the heating assembly, improving the diffusion uniformity of active particles above the substrate stage. The lifting assembly can flexibly adjust the distance between the substrate stage and the heating assembly according to requirements such as coating thickness and growth rate, thereby improving the uniformity of the synthesized diamond coating and adapting to various deposition process scenarios. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] in: Figure 1 This is a schematic front view of a diamond deposition apparatus in one embodiment; Figure 2 This is a top view of a diamond deposition apparatus in one embodiment; Figure 3 for Figure 1 Schematic diagram of the cross-sectional structure of section AA in the middle; Figure 4 for Figure 2 Schematic diagram of the cross-sectional structure of section BB in the middle; Figure 5 This is a partial structural schematic diagram of the spray assembly of a diamond deposition apparatus in one embodiment; Figure 6This is a partial structural schematic diagram of the spray assembly in one embodiment; Figure 7 This is a partial structural schematic diagram of the lifting assembly of a diamond deposition apparatus in one embodiment; Figure 8 This is a schematic diagram of the structure of an insulating fastener in one embodiment; Figure 9 This is a schematic diagram of the structure of a screw insulating sleeve in one embodiment; Figure 10 This is a schematic diagram of the structure of an annular insulating plate in one embodiment.

[0019] Explanation of the attached drawing numbers: 100: Vacuum chamber assembly; 110: Enclosed chamber; 120: Chamber base plate; 200: Spray assembly; 210: Spray plate; 211: Gas buffer chamber; 212: Spray hole; 220: Air inlet; 230: Baffle plate; 300: Heating assembly; 310: Heating wire; 320: Heating wire support; 400: Substrate stage; 500: Lifting assembly; 510: Lifting mechanism; 520: Lifting rod; 530: Lifting support unit; 531: Annular insulating plate; 532: Base plate sealing plate; 534: Insulating fastener; 535: Lifting plate insulating component; 5341: Screw; 5342: Screw insulating sleeve; 600: Gas path assembly; 700: Water path assembly; 710: First pipeline; 720: Second pipeline; 800: Vacuum system; 900: Lower chassis. Detailed Implementation

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains; the terminology used herein in the specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and accompanying drawings of this invention are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or accompanying drawings of this invention are used to distinguish different objects, not to describe a particular order.

[0021] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of the present invention. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0022] To enable those skilled in the art to better understand the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings.

[0023] Reference Figures 1-4 An embodiment of this utility model illustrates a diamond deposition apparatus, comprising: The vacuum chamber assembly 100 has a closed chamber 110, in which a spray assembly 200, a heating assembly 300 and a substrate stage 400 are arranged sequentially along the vertical direction; the bottom of the vacuum chamber assembly 100 is provided with a chamber bottom plate 120, and a through hole is provided on the chamber bottom plate 120. The lifting assembly 500 includes a lifting mechanism 510, a lifting rod 520, and a lifting support unit 530 sleeved on the outside of the lifting rod 520. The top end of the lifting rod 520 is connected to the substrate stage 400 through the through hole, and the bottom end of the lifting rod 520 is connected to the lifting mechanism 510. The lifting mechanism 510 drives the lifting rod 520 to move the substrate stage 400 in the vertical direction, thereby adjusting the distance between the substrate stage 400 and the heating assembly 300. The gas path assembly 600 has its output end connected to the spray assembly 200 and is used to deliver the reaction gas into the closed cavity 110. The spray assembly 200 is disposed at the top of the enclosed cavity 110 and is used to introduce and diffuse the reactive gas; The heating component 300 is located below the spraying component 200 and is used to thermally excite the reaction gas; The substrate stage 400 is located below the heating assembly 300 and is used to support the workpiece to be deposited; Water circuit assembly 700 is used to supply circulating cooling water to the vacuum chamber assembly 100 and the substrate stage 400; The vacuum system 800 has its input end connected to the enclosed cavity 110.

[0024] In this embodiment, the vacuum chamber assembly 100 is disposed above the lower chassis 900, the spray assembly 200 is fixed to the top inner wall of the closed chamber 110, the heating assembly 300 is suspended directly below the spray assembly 200, the two are spaced several tens of centimeters apart, and the substrate stage 400 is located directly below the heating assembly 300, used to support the substrate (i.e. the workpiece to be deposited, such as silicon wafer, molybdenum wafer, etc.) to be deposited with diamond. The substrate rises and falls synchronously with the substrate stage 400.

[0025] The spray assembly 200 is used to uniformly spray the reaction gas delivered by the gas path assembly 600 towards the heating assembly 300 below, so as to avoid excessively high local gas concentration and improve the uniformity of gas diffusion. The heating assembly 300 heats the gas to above 2000℃, thermally decomposes the reaction gas sprayed by the spray assembly 200, and generates carbon-containing active particles, which are used as raw materials for diamond deposition.

[0026] In the lifting assembly 500, the lifting mechanism 510 and the lifting support unit 530 are housed in the lower housing 900. The lifting mechanism 510 is, for example, a screw jack driven by a servo motor. The lifting rod 520 is made of metal. The lifting support unit 530 is sleeved on the outside of the lifting rod 520. The main structure of the lifting support unit 530 includes components such as a corrugated sleeve. The specific structure and working principle of these components are already well-established in the field and will not be described in detail here. The lifting mechanism 510 drives the lifting rod 520 to move up and down via a screw drive. The top end of the lifting rod 520 is fixedly connected to the substrate stage 400 by bolts, and the bottom end is connected to the output shaft of the lifting mechanism 510. Through this transmission method, the substrate stage 400 can be driven to move vertically, thereby adjusting the distance between the substrate stage 400 and the heating assembly 300 to adapt to the deposition requirements of diamonds of different thicknesses.

[0027] The main components of the gas path assembly 600, water path assembly 700, and vacuum system 800 are located inside the lower casing 900. Some pipelines are located outside the lower casing 900 as needed. All components adopt conventional configurations in the art, and their specific structures and general working principles are well known to those skilled in the art. The following only describes their cooperation with this equipment. The gas path assembly 600 includes a gas source, flow controller, gas delivery pipeline, etc. The gas delivery pipeline is connected to the air inlet 220 of the spray assembly 200 for transporting reaction gases. The water path assembly 700 includes a cooling water tank, water pump, pipeline, etc. The substrate stage 400 has an annular cooling channel (not shown in the figure) inside. The water path assembly 700 removes heat from the outer wall of the closed cavity 110 and the substrate stage 400 through circulating cooling water. The vacuum system 800 includes a vacuum pump, vacuum valve, and vacuum pipeline, etc. It is connected to the vacuum interface of the closed cavity 110 through pipelines, which can evacuate the closed cavity 110. The through hole of the cavity bottom plate 120 is fitted with the lifting rod 520 with a clearance fit, and the clearance is sealed.

[0028] In practical use, the substrate is fixed on the substrate stage 400, the sealed cavity 110 is closed, and the vacuum system 800 is activated to evacuate to a preset pressure (e.g., 5 Pa). The reaction gas is introduced into the sealed cavity 110 through the gas path assembly 600 and the spray assembly 200 to maintain stable cavity pressure. The heating wire 310 of the heating assembly 300 is energized and heated to 2000℃, while the water path assembly 700 is activated. The lifting mechanism 510 of the lifting assembly 500 drives the substrate stage 400 to rise, adjusting the distance between the substrate and the heating assembly 300 to a preset distance. The reaction gas is evenly sprayed out through the spray assembly 200 and decomposed into carbon-containing active particles by the heating assembly 300, which are deposited on the substrate surface to form a diamond film. After deposition, the heating assembly 300 and the gas path assembly 600 are turned off in sequence. After the cavity cools down, the vacuum is broken, and the substrate is removed.

[0029] The diamond deposition equipment of this embodiment, by vertically arranging the spray assembly 200, heating assembly 300 and substrate stage 400 in the closed cavity 110, allows the reactive gas to be uniformly diffused by the spray assembly 200 and then directly enter the thermal excitation area of ​​the heating assembly 300, thereby improving the diffusion uniformity of active particles above the substrate stage 400. The lifting assembly 500 can flexibly adjust the distance between the substrate stage 400 and the heating assembly 300 according to the requirements of coating thickness, growth rate and other factors, thereby improving the uniformity of the synthesized diamond coating and adapting to various deposition process scenarios.

[0030] In some specific embodiments, reference is made to Figures 5-6 The spray assembly 200 includes a spray plate 210 and an air inlet 220. The spray plate 210 has a gas buffer chamber 211 inside and a plurality of through spray holes 212 at the bottom. The air inlet 220 is located at the center of the side of the spray plate 210 away from the heating assembly 300. The air inlet 220 connects the output end of the gas path assembly with the gas buffer chamber 211.

[0031] In this embodiment, the gas buffer chamber 211 is a cavity formed inside the spray plate 210, used to achieve gas buffering and uniform flow. Several through-holes 212 are distributed at the bottom of the spray plate 210 (i.e., the side facing the heating component 300). The spray holes 212 can be small holes arranged in an array, with the hole diameter determined according to the gas flow requirements, so that the reactant gas is evenly sprayed from the bottom of the spray plate 210. The air inlet 220 is a tubular interface, one end of which is connected to the gas supply pipeline of the gas path assembly 600, and the other end extends into the gas buffer chamber 211, introducing the reactant gas supplied by the gas path assembly into the buffer chamber. Through the spray assembly structure design of this embodiment, after the reactant gas enters the gas buffer chamber 211 from the central air inlet 220, it can fully diffuse within the buffer chamber, and then be sprayed out towards the heating component 300 area through the evenly distributed spray holes 212 at the bottom, improving the uniformity of the reactant gas distribution in the thermally activated area.

[0032] In some specific embodiments, reference is made to Figure 6 The spray assembly 200 further includes a baffle plate 230, which is disposed in the gas buffer chamber 211. The baffle plate 230 is arranged parallel to the spray plate 210, and the area of ​​the baffle plate 230 is smaller than the area of ​​the spray plate 210.

[0033] The baffle plate 230 is a plate-shaped structure arranged parallel to the spray plate 210 and is entirely placed inside the gas buffer chamber 211. The baffle plate 230 has an array of through holes. The area of ​​the baffle plate 230 is smaller than that of the spray plate 210, and an annular gas channel is left between its edge and the inner wall of the gas buffer chamber 211. The baffle plate 230 can be fixed to the top inner wall of the gas buffer chamber 211 (i.e., the inner wall of the spray plate 210 facing away from the heating element), ensuring that it remains parallel to the spray plate 210 and is in a stable position.

[0034] When the reactant gas enters the gas buffer chamber 211 through the inlet 220, it first impacts the central area of ​​the baffle plate 230. Part of the gas diffuses downwards through the through-holes of the baffle plate 230 to the space between the baffle plate 230 and the spray plate 210, and then exits through the spray holes 212 of the spray plate 210. Another part of the gas diffuses along the surface of the baffle plate 230 towards the edge, flowing through the annular gap between its edge and the inner wall of the gas buffer chamber 211 to the bottom of the spray plate 210, and finally exits through the spray holes 212. Through the guiding effect of the baffle plate 230, the reactant gas diffuses more fully within the gas buffer chamber 211, effectively reducing the gas flow difference between the central and edge areas of the spray holes 212 caused by the central inlet, thus making the reaction gas sprayed more uniformly onto the heating component 300.

[0035] In some specific embodiments, reference is made to Figures 3-4 The heating assembly 300 includes a heating wire 310 and opposing heating wire supports 320. The heating wire supports 320 are vertically mounted on the cavity base plate 120 and distributed on both sides of the substrate stage 400. The two ends of the heating wire 310 are respectively fixed to the opposing heating wire supports 320. The heating wire 310 is located above the substrate stage 400 and maintains a preset distance from it. The heating wire 310 is made of high-temperature resistant metal wire, such as tungsten wire or tantalum wire, and is suspended directly above the substrate stage 400. When the heating wire 310 is energized and heated, it allows the reactive gas to fully decompose in the thermally excited region directly above the substrate, thereby placing the substrate to be deposited with diamond in a uniform reactive gas atmosphere.

[0036] In some specific embodiments, reference is made to Figures 3-4The width of the spray plate 210 is less than or equal to the length of the heating wire 310. The width of the spray plate 210 is the radial dimension along the substrate stage 400, and the length of the heating wire 310 is the lateral coverage dimension formed after being fixed by the side supports. The width of the spray plate 210 is slightly smaller than the length of the heating wire 310. For example, if the lateral coverage width formed by the heating wire 310 after being fixed by the side supports is 300 mm, then the width of the spray plate 210 can be designed to be 280~300 mm. This ensures that the reactive gas sprayed from the spray plate 210 enters the thermal excitation area of ​​the heating wire 310 as much as possible, ensuring the uniformity of the concentration of active particles on the substrate surface and improving the gas utilization rate, thereby optimizing the deposition quality of the diamond coating.

[0037] In some specific embodiments, reference is made to Figure 7 The lifting support unit 530 is sleeved on the outside of the lifting rod 520. The lifting support unit 530 includes an upper insulating part and a lower insulating part. The upper insulating part is sandwiched between the upper end of the lifting support unit 530 and the cavity bottom plate 120, and the lower insulating part is sandwiched between the lower end of the lifting support unit 530 and the lifting mechanism 510. The upper and lower insulating parts are respectively disposed at the upper and lower ends of the lifting support unit 530 to form an insulating structure, thereby effectively isolating the electrical connection between the substrate stage 400 and the cavity bottom plate 120 and the lifting mechanism 510 through the lifting rod 520 and the lifting support unit 530. This avoids the risk of short circuits caused by conductivity between equipment components during the deposition process, ensures the potential stability of the substrate stage 400, and improves the deposition quality of the diamond coating.

[0038] In some specific embodiments, reference is made to Figure 7 and Figure 10 The upper insulating part includes an annular insulating plate 531, a bottom sealing plate 532, and an insulating fastener 534. The annular insulating plate 531 is disposed on the lower surface of the cavity bottom plate 120, and the bottom sealing plate 532 is fitted onto the lower surface of the annular insulating plate 531. The upper end face of the lifting support unit 530 is fitted onto the lower surface of the bottom sealing plate 532. The insulating fastener 534 passes through the upper end face of the lifting support unit 530, the bottom sealing plate 532, and the annular insulating plate 531, and is then locked and fixed to the cavity bottom plate 120. The annular insulating plate 531 is made of high-temperature resistant insulating material, such as alumina ceramic or mica board, and is sleeved on the outside of the lifting support unit 530 and fitted onto the lower surface of the cavity bottom plate 120, serving to insulate the cavity bottom plate from the components below. The bottom sealing plate 532 is attached to the lower surface of the annular insulating plate 531a, and a sealing ring is provided between its inner edge and the outer wall of the lifting support unit 530 to ensure a vacuum seal at the through hole 121.

[0039] In some specific embodiments, reference is made to Figure 7 The lower insulating part includes a lifting plate insulating component 535 and an insulating fastener 534. The lifting plate insulating component 535 is sandwiched between the bottom end face of the lifting support unit 530 and the lifting machine 510. The insulating fastener 534 passes through the upper end face of the lifting machine 510 and the lifting plate insulating component 535, and is locked and fixed to the bottom end face of the lifting support unit 530. The lifting plate insulating component 535 is made of high-temperature resistant insulating material, such as alumina ceramic or mica board, and is sandwiched between the bottom end face of the lifting support unit 530 and the upper end face of the lifting machine 510 to form an electrical isolation layer between the two.

[0040] In some specific embodiments, reference is made to Figures 8-9 The insulating fastener 534 includes a screw 5341 and a screw insulating sleeve 5342, with the screw insulating sleeve 5342 fitted over the outside of the screw 5341. Both the upper and lower insulating portions of the insulating fastener 534 employ a combination structure of screw 5341 and screw insulating sleeve 5342. The screw 5341 is made of metal (such as stainless steel) to ensure connection strength, while the screw insulating sleeve 5342 is made of high-temperature resistant insulating material (such as polytetrafluoroethylene or ceramic tubing). Its inner diameter matches the outer diameter of the screw 5341. The screw insulating sleeve 5342 completely encloses the portion of the screw 5341 that contacts the connected component, isolating the metal screw 5341 from the components and thus blocking the path of current transmission through the fastener, ensuring the electrical connection between the isolation substrate stage 400 and the cavity base plate 120.

[0041] In some specific embodiments, reference is made to Figure 4 The water channel assembly 700 includes a first pipe 710 and a second pipe 720. The first pipe 710 is connected to the cavity interlayer of the vacuum cavity assembly 100 and is used to regulate the cavity temperature. The second pipe 720 is connected to the cooling channel inside the substrate stage 400 and is used to regulate the temperature of the workpiece to be deposited. Circulating cooling water is introduced into the cavity interlayer through the first pipe 710 to remove excess heat generated by the heating assembly 300 in the sealed cavity 110, maintaining the cavity temperature within a suitable range. The cooling water provided by the second pipe 720 flows within the channel of the substrate stage 400, thereby stabilizing the temperature of the workpiece to be deposited at a suitable deposition temperature according to the diamond deposition process requirements, ensuring the temperature uniformity of the substrate stage 400, and further improving the uniformity of the diamond film coating.

[0042] Obviously, the embodiments described above are only some embodiments of this utility model, not all embodiments. The accompanying drawings show preferred embodiments of this utility model, but do not limit the patent scope of this utility model. This utility model can be implemented in many different forms; rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of this utility model. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this utility model specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the patent protection scope of this utility model.

Claims

1. A diamond deposition apparatus, characterized in that, include: A vacuum chamber assembly has a closed cavity, in which a spray assembly, a heating assembly, and a substrate stage are arranged sequentially along the vertical direction; the bottom of the vacuum chamber assembly is provided with a cavity bottom plate, and a through hole is formed on the cavity bottom plate; The lifting assembly includes a lifting mechanism, a lifting rod, and a lifting support unit sleeved on the outside of the lifting rod. The top end of the lifting rod is connected to the substrate stage through the through hole, and the bottom end of the lifting rod is connected to the lifting mechanism. The lifting mechanism drives the lifting rod to move the substrate stage in the vertical direction, thereby adjusting the distance between the substrate stage and the heating assembly. The gas path assembly has its output end connected to the spray assembly and is used to deliver the reaction gas into the closed cavity. The spray assembly is located at the top of the enclosed cavity and is used to introduce and diffuse the reactive gas; The heating component is located below the spraying component and is used to thermally excite the reaction gas; The substrate stage is located below the heating assembly and is used to support the workpiece to be deposited; A water circuit assembly is used to supply circulating cooling water to the vacuum chamber assembly and the substrate stage; The vacuum system has its input end connected to the enclosed cavity.

2. The diamond deposition equipment as described in claim 1, characterized in that, The spray assembly includes a spray plate and an air inlet. The spray plate has a gas buffer chamber inside and several through spray holes at the bottom. The air inlet is located at the center of the side of the spray plate away from the heating assembly and connects the output end of the gas path assembly with the gas buffer chamber.

3. The diamond deposition equipment as described in claim 2, characterized in that, The spray assembly also includes a baffle plate disposed within the gas buffer chamber. The baffle plate is arranged parallel to the spray plate, and the area of ​​the baffle plate is smaller than the area of ​​the spray plate.

4. The diamond deposition equipment as described in claim 2, characterized in that, The heating assembly includes a heating wire and a heating wire support arranged opposite to each other. The heating wire support is vertically installed on the cavity bottom plate and distributed on both sides of the substrate stage. The two ends of the heating wire are respectively fixed on the heating wire support arranged opposite to each other. The heating wire is located above the substrate stage and maintains a preset distance from the substrate stage.

5. The diamond deposition apparatus as described in claim 4, characterized in that, The width of the spray plate is less than or equal to the length of the heating wire.

6. The diamond deposition apparatus as described in claim 1, characterized in that, The lifting support unit is sleeved on the outside of the lifting rod. The lifting support unit includes an upper insulating part and a lower insulating part. The upper insulating part is sandwiched between the upper end of the lifting support unit and the bottom plate of the cavity, and the lower insulating part is sandwiched between the lower end of the lifting support unit and the elevator.

7. The diamond deposition apparatus as described in claim 6, characterized in that, The upper insulating part includes an annular insulating plate, a bottom sealing plate, and insulating fasteners. The annular insulating plate is disposed on the lower surface of the cavity bottom plate, the bottom sealing plate is attached to the lower surface of the annular insulating plate, and the upper end face of the lifting support unit is attached to the lower surface of the bottom sealing plate. The insulating fasteners pass through the upper end face of the lifting support unit, the bottom sealing plate, and the annular insulating plate, and are then locked and fixed to the cavity bottom plate.

8. The diamond deposition apparatus as described in claim 6, characterized in that, The lower insulating part includes a lifting plate insulating component and an insulating fastener. The lifting plate insulating component is sandwiched between the bottom end face of the lifting support unit and the lifting machine. The insulating fastener passes through the upper end face of the lifting machine and the lifting plate insulating component, and is then locked and fixed to the bottom end face of the lifting support unit.

9. The diamond deposition apparatus as described in claim 7 or 8, characterized in that, The insulating fastener includes a screw and a screw insulating sleeve, the screw insulating sleeve being fitted over the outside of the screw.

10. The diamond deposition apparatus as described in claim 1, characterized in that, The water circuit assembly includes a first pipe and a second pipe; the first pipe is connected to the cavity interlayer of the vacuum cavity assembly and is used to regulate the cavity temperature. The second pipeline is connected to the cooling channel inside the substrate stage and is used to regulate the temperature of the workpiece to be deposited.

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